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2N3419 2N3420 2N3421 Silicon NPN Transistors Description

The document describes three silicon NPN transistors (2N3419, 2N3420, 2N3421) manufactured by Central Semiconductor. The transistors are designed for small signal and switching applications. Key specifications include maximum voltage and current ratings, electrical characteristics like gain and saturation voltage, and the TO-39 case mechanical outline.

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ritty9997446
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52 views2 pages

2N3419 2N3420 2N3421 Silicon NPN Transistors Description

The document describes three silicon NPN transistors (2N3419, 2N3420, 2N3421) manufactured by Central Semiconductor. The transistors are designed for small signal and switching applications. Key specifications include maximum voltage and current ratings, electrical characteristics like gain and saturation voltage, and the TO-39 case mechanical outline.

Uploaded by

ritty9997446
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2N3419

2N3420
2N3421 w w w. c e n t r a l s e m i . c o m

SILICON DESCRIPTION:
NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3419, 2N3420,
and 2N3421 are silicon NPN transistors manufactured
by the epitaxial planar process, and designed for small
signal general purpose and switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N3419


SYMBOL 2N3420 2N3421 UNITS
Collector-Base Voltage VCBO 85 125 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 8.0 V
Continuous Collector Current IC 3.0 A
Peak Collector Current (PW<1.0ms, D.C.<50%) ICM 5.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 15 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3419


2N3420 2N3421
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEX VCE=80V, VEB=0.5V - 500 - - nA
ICEX VCE=120V, VEB=0.5V - - - 500 nA
ICEX VCE=80V, VEB=0.5V, TC=150°C - 50 - - μA
ICEX VCE=120V, VEB=0.5V, TC=150°C - - - 50 μA
IEBO VEB=6.0V - 500 - 500 nA
IEBO VEB=8.0V - 10 - 10 μA
BVCEO IC=50mA 60 - 80 - V
VCE(SAT) IC=1.0A, IB=100mA - 0.25 - 0.25 V
VCE(SAT) IC=2.0A, IB=200mA - 0.50 - 0.50 V
VBE(SAT) IC=1.0A, IB=100mA 0.6 1.2 0.6 1.2 V
VBE(SAT) IC=2.0A, IB=200mA 0.7 1.4 0.7 1.4 V
fT VCE=10V, IC=100mA, f=20MHz 40 - 40 - MHz
Cob VCB=10V, IE=0, f=1.0MHz - 150 - 150 pF
ton VEB(OFF)=3.7V, IC=1.0A, - 300 - 300 ns
toff IB1=IB2=100mA, RL=20Ω - 1.2 - 1.2 μs

R0 (24-March 2014)
2N3419
2N3420
2N3421

SILICON
NPN TRANSISTORS

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) 2N3420


2N3419 2N3421
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
hFE VCE=2.0V, IC=100mA 20 - 40 -
hFE VCE=2.0V, IC=1.0A 20 60 40 160
hFE VCE=2.0V, IC=2.0A 15 - 30 -
hFE VCE=5.0V, IC=5.0A 10 - 15 -

TO-39 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Emitter
2) Base
3) Collector

MARKING: FULL PART NUMBER

R0 (24-March 2014)
w w w. c e n t r a l s e m i . c o m

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