2N3467
2N3468
                                                                                    w w w. c e n t r a l s e m i . c o m
                 SILICON                     DESCRIPTION:
            PNP TRANSISTORS                  The CENTRAL SEMICONDUCTOR 2N3467 and
                                             2N3468 are silicon PNP switching transistors designed
                                             for core driver applications.
                                             MARKING: FULL PART NUMBER
                TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)                   SYMBOL           2N3467           2N3468           UNITS
Collector-Base Voltage                        VCBO              40               50               V
Collector-Emitter Voltage                     VCEO              40                 50               V
Emitter-Base Voltage                          VEBO                       5.0                        V
Continuous Collector Current                   IC                        1.0                        A
Power Dissipation                              PD                        1.0                       W
Power Dissipation (TC=25°C)                    PD                        5.0                       W
Operating and Storage Junction Temperature   TJ, Tstg                -65 to +200                   °C
Thermal Resistance                             ΘJA                      175                      °C/W
Thermal Resistance                             ΘJC                       35                      °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
                                               2N3467                      2N3468
SYMBOL     TEST CONDITIONS                  MIN     MAX                 MIN    MAX              UNITS
ICBO       VCB=30V                            -      100                 -      100              nA
ICBO          VCB=30V, TA=100°C                 -       15                -         15             μA
ICEV          VCE=30V, VBE=3.0V                 -       100               -         100            nA
IBEV          VCE=30V, VBE=3.0V                 -       120               -         120            nA
BVCBO         IC=10μA                          40        -               50             -           V
BVCEO         IC=10mA                          40        -               50             -           V
BVEBO         IE=10μA                          5.0       -               5.0            -           V
VCE(SAT)      IC=150mA, IB=15mA                 -       0.3               -        0.36             V
VCE(SAT)      IC=500mA, IB=50mA                 -       0.5               -         0.6             V
VCE(SAT)      IC=1.0A, IB=100mA                 -       1.0               -         1.2             V
VBE(SAT)      IC=150mA, IB=15mA                 -       1.0               -         1.0             V
VBE(SAT)      IC=500mA, IB=50mA                0.8      1.2              0.8        1.2             V
VBE(SAT)      IC=1.0A, IB=100mA                 -       1.6               -         1.6             V
hFE           VCE=1.0V,     IC=150mA           40        -               25             -
hFE           VCE=1.0V,     IC=500mA           40       120              25         75
hFE           VCE=5.0V, IC=1.0A                40        -               20             -
                                                                                             R2 (26-July 2013)
                         2N3467
                         2N3468
                     SILICON
                PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
                                                2N3467               2N3468
SYMBOL TEST CONDITIONS                        MIN     MAX          MIN   MAX        UNITS
fT      VCE=10V, IC=50mA, f=100MHz            175        -         150      -        MHz
Cob            VCB=10V, IE=0, f=100kHz                  -    25          -   25       pF
Cib            VEB=0.5V, IC=0, f=100kHz                 -    100         -   100      pF
ton            VCC=30V, VBE=2.0V, IC=500mA, IB1=50mA    -    40          -   40       ns
toff           VCC=30V, IC=500mA, IB1=IB2=50mA          -    90          -   90       ns
QT             VCC=30V, IC=500mA, IB=50mA               -    6.0         -   6.0      nC
                                       TO-39 CASE - MECHANICAL OUTLINE
                                                              LEAD CODE:
                                                              1) Emitter
                                                              2) Base
                                                              3) Collector
                                                              MARKING: FULL PART NUMBER
                                                                                   R2 (26-July 2013)
w w w. c e n t r a l s e m i . c o m
                         2N3467
                         2N3468
                     SILICON
                PNP TRANSISTORS
                                       TYPICAL ELECTRICAL CHARACTERISTICS
                                                                            R2 (26-July 2013)
w w w. c e n t r a l s e m i . c o m
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w w w. c e n t r a l s e m i . c o m                                                                 (001)
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 2N3467 2N3468 CEN1273