2N6294 2N6295 NPN
2N6296 2N6297 PNP
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COMPLEMENTARY SILICON DESCRIPTION:
DARLINGTON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6294, 2N6296
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and medium
speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
2N6294 2N6295
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6296 2N6297 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 4.0 A
Peak Collector Current ICM 8.0 A
Continuous Base Current IB 80 mA
Power Dissipation PD 50 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 3.5 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV VCE=Rated VCEO, VEB=1.5V 0.5 mA
ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA
ICEO VCE=½Rated VCEO 0.5 mA
IEBO VEB=5.0V 2.0 mA
BVCEO IC=50mA, (2N6294, 2N6296) 60 V
BVCEO IC=50mA, (2N6295, 2N6297) 80 V
VCE(SAT) IC=2.0A, IB=8.0mA 2.0 V
VCE(SAT) IC=4.0A, IB=40mA 3.0 V
VBE(SAT) IC=4.0A, IB=40mA 4.0 V
VBE(ON) VCE=3.0V, IC=2.0A 2.8 V
hFE VCE=3.0V, IC=2.0A 750 18K
hFE VCE=3.0V, IC=4.0A 100
hfe VCE=3.0V, IC=1.5A, f=1.0kHz 300
fT VCE=3.0V, IC=1.5A, f=1.0MHz 4.0 MHz
Cob VCB=10V, IE=0, f=100kHz (NPN types) 120 pF
Cob VCB=10V, IE=0, f=100kHz (PNP types) 200 pF
R2 (2-September 2014)
2N6294 2N6295 NPN
2N6296 2N6297 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
R2 (2-September 2014)
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