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2 N 3053

The 2N3053 and 2N3053A are epitaxial planar NPN silicon transistors designed for general purpose applications. They are housed in a TO-39 case and have maximum ratings including collector-emitter voltages up to 40V and 60V respectively, and continuous collector currents up to 0.7A. The document provides key electrical characteristics for the transistors such as current, voltage, and thermal parameters. Central Semiconductor provides support services for customers including free samples, application notes, and custom product development.

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192 views3 pages

2 N 3053

The 2N3053 and 2N3053A are epitaxial planar NPN silicon transistors designed for general purpose applications. They are housed in a TO-39 case and have maximum ratings including collector-emitter voltages up to 40V and 60V respectively, and continuous collector currents up to 0.7A. The document provides key electrical characteristics for the transistors such as current, voltage, and thermal parameters. Central Semiconductor provides support services for customers including free samples, application notes, and custom product development.

Uploaded by

sas999333
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© © All Rights Reserved
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2N3053

2N3053A
w w w. c e n t r a l s e m i . c o m
SILICON DESCRIPTION:
NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A
types are epitaxial planar NPN silicon transistors
designed for general purpose applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS: (TA=25C) SYMBOL 2N3053 2N3053A UNITS


Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 0.7 A
Power Dissipation (TC=25C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 C
Thermal Resistance JC 35 C/W

ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)


2N3053 2N3053A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV VCE=30V, VEB=1.5V - 250 - - nA
ICEV VCE=60V, VEB=1.5V - - - 250 nA
IEBO VEB=4.0V - 250 - 250 nA
BVCBO IC=100A 60 - 80 - V
BVCER IC=100mA, RBE=10 (Note 1) 50 - 70 - V
BVCEO IC=100mA (Note 1) 40 - 60 - V
BVEBO IE=100A 5.0 - 5.0 - V
VCE(SAT) IC=150mA, IB=15mA - 1.4 - 0.3 V
VBE(SAT) IC=150mA, IB=15mA - 1.7 0.6 1.0 V
VBE(ON) VCE=2.5V, IC=150mA - 1.7 - 1.0 V
hFE VCE=2.5V, IC=150mA 25 - 25 -
hFE VCE=10V, IC=150mA 50 250 50 250
fT VCE=10V, IC=50mA, f=100MHz 100 - 100 - MHz
Cob VCB=10V, IE=0, f=1.0MHz - 15 - 15 pF
Cib VBE=0.5V, IC=0, f=1.0MHz - 80 - 80 pF
Notes: (1) Pulse width < 300s, duty cycle < 2%.

R2 (13-December 2013)
2N3053
2N3053A

SILICON
NPN TRANSISTORS

TO-39 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Emitter
2) Base
3) Collector

MARKING: FULL PART NUMBER

R2 (13-December 2013)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES

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CONTACT US

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Central Semiconductor Corp.


145 Adams Avenue Worldwide Field Representatives:
Hauppauge, NY 11788 USA www.centralsemi.com/wwreps
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824 Worldwide Distributors:
Support Team Fax: (631) 435-3388 www.centralsemi.com/wwdistributors
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For the latest version of Central Semiconductors LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Centrals Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms

w w w. c e n t r a l s e m i . c o m

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