2N5050
2N5051
2N5052 w w w. c e n t r a l s e m i . c o m
SILICON DESCRIPTION:
NPN POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5050, 2N5051,
and 2N5052 are silicon NPN transistors designed for
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5050 2N5051 2N5052 UNITS
Collector-Base Voltage VCBO 125 150 200 V
Collector-Emitter Voltage VCEO 125 150 200 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 2.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 40 W
Operating Junction Temperature TJ -65 to +175 °C
Storage Temperature Tstg -65 to +200 °C
Thermal Resistance JC 3.76 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEX VCE=Rated VCEO, VBE(off)=1.5V 0.5 mA
ICEX VCE=Rated VCEO, VBE(off)=1.5V, TC=150°C 5.0 mA
ICEO VCE=62.5V (2N5050) 0.1 mA
ICEO VCE=75V (2N5051) 0.1 mA
ICEO VCE=100V (2N5052) 0.1 mA
IEBO VEB=6.0V 0.1 mA
BVCEO IC=200mA (2N5050) 125 V
BVCEO IC=200mA (2N5051) 150 V
BVCEO IC=200mA (2N5052) 200 V
VCE(SAT) IC=0.75A, IB=0.1A 1.0 V
VCE(SAT) IC=2.0A, IB=0.4A 5.0 V
VBE(ON) VCE=5.0V, IC=0.75A 1.2 V
hFE VCE=5.0V, IC=0.75A 25 100
hFE VCE=5.0V, IC=1.0A 25
hFE VCE=5.0V, IC=2.0A 5.0
hfe VCE=10V, IC=250mA, f=1.0kHz 25
fT VCE=10V, IC=250mA, f=5.0MHz 10 MHz
R0 (15-January 2019)
This datasheet has been downloaded from http://www.digchip.com at this page
2N5050
2N5051
2N5052
SILICON
NPN POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
Cob VCB=10V, IE=0, f=100kHz 250 pF
tr 300 ns
VCC=120V, IC=750mA,
ts 3.5 μs
IB1=IB2=100mA, RL=150Ω
tf 1.2 μs
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
R0 (15-January 2019)
w w w. c e n t r a l s e m i . c o m
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