2N3713         2N3715
2N3714         2N3716
                                                                                     w w w. c e n t r a l s e m i . c o m
                 SILICON                          DESCRIPTION:
            NPN TRANSISTORS                       The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,
                                                  2N3715, and 2N3716 are silicon NPN power transistors
                                                  manufactured by the epitaxial-base process, mounted
                                                  in a hermetically sealed metal package designed for
                                                  medium speed switching and amplifier applications.
                                                  MARKING: FULL PART NUMBER
                 TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)                                     2N3713           2N3714
                                                  SYMBOL       2N3715           2N3716           UNITS
Collector-Base Voltage                             VCBO          80               100              V
Collector-Emitter Voltage                          VCEO          60                 80               V
Emitter-Base Voltage                               VEBO                   7.0                        V
Continuous Collector Current                        IC                    10                         A
Continuous Base Current                             IB                    4.0                        A
Power Dissipation                                   PD                   150                        W
Operating and Storage Junction Temperature        TJ, Tstg            -65 to +200                   °C
Thermal Resistance                                 JC                   1.17                     °C/W
ELECTRICAL    CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL        TEST CONDITIONS                      MIN       TYP                 MAX             UNITS
ICEV          VCE=Rated VCBO, VBE=1.5V                                            1.0             mA
ICEV          VCE=Rated VCEO, VBE=1.5V, TC=150°C                                    10             mA
IEBO          VEB=7.0V                                                           5.0               mA
BVCEO         IC=200mA (2N3713, 2N3715)                  60                                          V
BVCEO         IC=200mA (2N3714, 2N3716)                  80                                          V
VCE(SAT)      IC=5.0A, IB=0.5A (2N3713, 2N3714)                                  1.0                 V
VCE(SAT)      IC=5.0A, IB=0.5A (2N3715, 2N3716)                                  0.8                 V
VBE(SAT)      IC=5.0A, IB=0.5A (2N3713, 2N3714)                                  2.0                 V
VBE(SAT)      IC=5.0A, IB=0.5A (2N3715, 2N3716)                                  1.5                 V
VBE(ON)       VCE=2.0V, IC=3.0A                                                  1.5                 V
hFE           VCE=2.0V, IC=1.0A (2N3713, 2N3714)         40                      120
hFE           VCE=2.0V, IC=1.0A (2N3715, 2N3716)         50                      150
hFE           VCE=2.0V, IC=3.0A (2N3713, 2N3714)         15
hFE           VCE=2.0V, IC=3.0A (2N3715, 2N3716)         30
fT            VCE=10V, IC=0.5A, f=1.0MHz                 4.0                                       MHz
tr            IC=5.0A, IB1=IB2=0.5A                             0.4                                 μs
ts            IC=5.0A, IB1=IB2=0.5A                             0.3                                 μs
tf            IC=5.0A, IB1=IB2=0.5A                             0.4                                 μs
                                                                                             R2 (18-June 2013)
                  2N3713         2N3715
                  2N3714         2N3716
                    SILICON
               NPN TRANSISTORS
                                          TO-3 CASE - MECHANICAL OUTLINE
                                                 R2
                                                                   LEAD CODE:
                                                                   1) Base
                                                                   2) Emitter
                                                                Case) Collector
                                                                   MARKING:
                                                                   FULL PART NUMBER
                                                                                  R2 (18-June 2013)
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