Transistor
NPN, TO-3
Features:
• Power dissipation - Pd = 115W at Tc = 25°C
• DC current gain hFE = 20 ~ 70 at Ic = 4A
• VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA
• Designed for use in general-purpose amplifier and switching applications
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage Vceo 60
Collector-Emitter Voltage Vcex 70
V
Collector-Base Voltage Vcbo 100
Emitter-Base Voltage Vebo 7
Collector Current-Continuous Ic 15
A
Base Current Ib 7
115 W
Total Device Dissipation at TC = 25°C Derate above 25°C Pd
0.657 W/°C
Operating and Storage Junction Temperature Range Tj, Tstg -65 to +150 °C
Thermal Characteristics
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 1.52 °C/W
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Transistor
NPN, TO-3
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min. Max. Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1) IEO (sus) 60 -
(lC = 200mA, lB = 0)
V
Collector-Base Sustaining Voltage (1)
VCER(sus) 70 -
(Ic = 200mA, Rbe = 100Ω)
Collector Cut off Current ICEO - 0.7
(VCE = 30V, IB = 0)
Collector Cut off Current
ICEX 1
(VCE = 100V, VBE (off) = 1.5V) - mA
5
(VCE = 100V, VBE (off) = 1.5V, TC = 150°C)
Emitter Cut off Current IEBO - 5
(VEB = 7V, IC = 0 )
On Characteristic (1)
DC Current Gain
20
(lC = 4A, VCE = 4V) hfe 70 -
5
(lC = 10A, VCE = 4V)
Collector-Emitter Saturation Voltage
1.1
(lC = 4A, IB = 0.4A) Vce (sat) -
3
(lC = 10A, IB = 3.3A) V
Base-Emitter On Voltage
Vbe (sat) - 1.5
(lC = 4A, VCE = 4V)
Dynamic Characteristics
Current Gain - Bandwidth Product (2)
ft 2.5 - MHz
(lc = 500mA,Vce = 10V, f = 1MHz)
Small-Signal Current Gain
hfe 15 120 -
(lC = 1A, VCE = 4V DC, f = 1 MHz)
Second Breakdown Characteristics
(1). Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.
(2). ft = |hfe| . ftest
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Transistor
NPN, TO-3
There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe
operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must
not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Tj(pk) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided Tj(pk) = 200°C, At high
case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
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Transistor
NPN, TO-3
Dimensions Min. Max.
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Dimensions : Millimetres
Part Number Table
Description Part Number
Transistor, NPN, TO-3 2N3055
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
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