 VND600SP

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

TARGET SPECIFICATION
TYPE RDS(on) Ilim VCC
VND600SP 30mΩ 25A 36 V

■ DC SHORT CIRCUIT CURRENT: 25 A

■ CMOS COMPATIBLE INPUTS
■ PROPORTIONAL LOAD CURRENT SENSE 10
■ UNDERVOLTAGE AND OVERVOLTAGEn

SHUT-DOWN 1
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT DOWN PowerSO-10
■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

n LOSS OF GROUND AND LOSS OF VCC compatibility table). This device has two channels
■ REVERSE BATTERY PROTECTION (*) in high side configuration; each channel has an
analog sense output on which the sensing current
is proportional (according to a known ratio) to the
DESCRIPTION corresponding load current. Built-in thermal shut-
The VND600SP is a monolithic device made down and outputs current limitation protect the
using STMicroelectronics VIPower technology. It chip from over temperature and short circuit.
is intended for driving resistive or inductive loads Device turns off in case of ground pin
with one side connected to ground. Active VCC pin disconnection.
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
BLOCK DIAGRAM
V CC

OVERVOLTAGE
V CC CLAMP UNDERVOLTAGE

PwCLAMP 1
DRIVER 1
OUTPUT 1
INPUT 1 ILIM1
V dslim1 Ot1
LOGIC
IOUT1
K CURRENT
INPUT 2
SENSE 1
PwCLAMP 2
GND DRIVER 2
Ot1 OUTPUT 2
ILIM2
OVERTEMP. 1 Vdslim2
Ot2
Ot2 IOUT2 CURRENT
OVERTEMP. 2 K
SENSE 2

(*) See application schematic at page 7

September 1999 1/10

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VND600SP

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit
VCC DC supply voltage 41 V
-VCC Reverse supply voltage -0.3 V
- IGND DC reverse ground pin current -200 mA
IOUT Output current Internally limited A
IR Reverse output current -21 A
IIN Input current +/- 10 mA
-3 V
VCSENSE Current sense maximum voltage
+15 V
VESD Electrostatic discharge (R=1.5kΩ; C=100pF) 2000 V
PTOT Power dissipation at T c=25°C 90 W
Tj Junction operating temperature Internally limited °C
Tc Case operating temperature -40 to 150 °C
TSTG Storage temperature -55 to 150 °C

CONNECTION DIAGRAM (TOP VIEW)

GROUND 6 5 OUTPUT 2
INPUT 2 7 4 OUTPUT 2
INPUT 1 8 3 N.C.
C.SENSE1 9 2 OUTPUT 1
C.SENSE2 10 OUTPUT 1
1

11
VCC

CURRENT AND VOLTAGE CONVENTIONS

ICC

VCC
VCC
IOUT1
IIN1
OUTPUT1
INPUT1 VOUT1
V IN1 ISENSE1
CURRENT SENSE 1
VSENSE1
IOUT2
IIN2 OUTPUT2
INPUT2 V
VIN2 ISENSE2 OUT2
CURRENT SENSE 2
GROUND VSENSE2

IGND

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 VND600SP

THERMAL DATA
Symbol Parameter Value Unit
Rthj-case (1) Thermal resistance junction-case (MAX) 1.75 °C/W
Rthj-case (2) Thermal resistance junction-case (MAX) 1.2 °C/W
Rthj-amb Thermal resistance junction-ambient (MAX) 50 °C/W
Note: (1) one channel ON
(2) two channels ON
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified)
(Per each channel)
POWER
Symbol Parameter Test Conditions Min Typ Max Unit
Operating supply
VCC 5.5 13 36 V
voltage
VUSD Undervoltage shutdown 3 4 5.5 V
VOV Overvoltage shutdown 36 42 48 V
IOUT =5A; Tj=25°C 30 mΩ
RON On state resistance IOUT =5A; Tj=150°C 60 mΩ
IOUT =3A; VCC=6V 100 mΩ
ICC=20 mA
Vclamp Clamp voltage 41 48 55 V
(see note 1)
Off state; Input n.c.; VCC=13V
40 µA
IS Supply current On state; VIN=5V; VCC=13V; IOUT=0A;
6 mA
RSENSE=3.9kΩ
IL(off) Off state output current VIN=VOUT=0V 0 50 µA

SWITCHING (VCC=13V)
Symbol Parameter Test Conditions Min Typ Max Unit
td(on) Turn-on delay time R1=2.6Ω 30 µs
td(off) Turn-on delay time R1=2.6Ω 30 µs
(dV OUT/dt)on Turn-on voltage slope R1=2.6Ω 0.20 V/µs
(dV OUT/dt)off Turn-off voltage slope R1=2.6Ω 0.20 V/µs

PROTECTIONS
Symbol Parameter Test Conditions Min Typ Max Unit
VCC=13V 25 40 70 A
Ilim DC short circuit current
5.5V<VCC <36V 70 A
Thermal shut-down
T TSD 150 175 200 °C
temperature
Thermal reset
TR 135 °C
temperature
THYST Thermal hysteresis 7 15 °C
Turn-off output voltage IOUT =2A; VIN=0V; L=6mH
Vdemag Vcc-41 Vcc-48 Vcc-55 V
clamp
Output voltage drop IOUT =0.5A
VON 50 mV
limitation Tj= -40°C...+150°C

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VND600SP

CURRENT SENSE (9V≤VCC≤16V) (See fig. 1)

Symbol Parameter Test Conditions Min Typ Max Unit
IOUT1 or IOUT2=0.5A; VSENSE =0.5V;
K1 IOUT/ISENSE 3300 4400 6000
other channels open; Tj= -40°C...150°C
IOUT1 or IOUT2=5A; VSENSE=4V; other 4200 4900 6000
K2 IOUT/ISENSE channels open; Tj=-40°C
Tj=25°C...150°C 4400 4900 5750
IOUT1 or IOUT2=15A; VSENSE=4V; other 4200 4900 5500
K3 IOUT/ISENSE channels open; Tj=-40°C
Tj=25°C...150°C 4400 4900 5250
Max analog sense VCC=5.5V; IOUT1,2=2.5A; RSENSE=10kΩ 2 V
VSENSE1,2
output voltage VCC>8V, IOUT1,2=5A; RSENSE=10kΩ 4 V
Analog sense output VCC=13V; RSENSE=3.9kΩ
VSENSEH voltage in overtemperature 5.5 V
condition

LOGIC INPUT (Channels 1,2)

Symbol Parameter Test Conditions Min Typ Max Unit
VIL Input low level voltage 1.25 V
IIL Low level input current VIN=1.25V 1 µA
VIH Input high level voltage 3.25 V
IIH High level input current VIN=3.25V 10 µA
VI(hyst) Input hysteresis voltage 0.5 V
IIN=1mA 6.5 7.4 8.5 V
VICL Input clamp voltage
IIN=-1mA -0.7 V

Note 1: Vclamp and VOV are correlated. Typical difference is 5V.

TRUTH TABLE (per channel)
CONDITIONS INPUT OUTPUT SENSE
L L 0
Normal operation Nominal
H H
L L 0
Overtemperature
H L VSENSEH
L L 0
Undervoltage
H L 0
L L 0
Overvoltage
H L 0
L L 0
Short circuit to GND
H L 0
L H 0
Short circuit to VCC
H H < Nominal
Negative output voltage
L L 0
clamp

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 VND600SP

ELECTRICAL TRANSIENT REQUIREMENTS

TEST LEVELS
ISO T/R 7637/1
I II III IV Delays and
Test Pulse
Impedance
1 -25 V -50 V -75 V -100 V 2 ms 10 Ω
2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω
3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω
3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω
4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω
5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω

ISO T/R 7637/1 TEST LEVELS RESULTS

Test Pulse I II III IV
1 C C C C
2 C C C C
3a C C C C
3b C C C C
4 C C C C
5 C E E E

CLASS CONTENTS
C All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance
E
and cannot be returned to proper operation without replacing the device.

SWITCHING CHARACTERISTICS

VOUT

90%
70%

dVOUT/dt(on) dVOUT/dt (of f)

tr 10% tf
t

INPUT
td(on) td(of f)

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Figure1: Waveforms

NORMAL OPERATION
INPUTn
LOAD CURRENTn
SENSEn

UNDERVOLTAGE
VCC
VUSDhyst
VU SD
INPUTn
LOAD CURRENTn
SENSEn

OVERVOLTAGE

VOV
VCC
V CC < VOV VCC > VOV
INPUTn
LOAD CURRENTn
SENSEn

SHORT TO GROUND
INPUTn
LOAD CURRENTn
LOAD VOLTAGEn
SENSEn

SHORT TO VCC
INPUTn
LOAD VOLTAGEn
LOAD CURRENTn
SENSEn
<Nominal <Nominal

OVERTEMPERATURE
T TSD
Tj
TR

INPUTn
LOAD CURRENTn
V SENSEH
SENSEn ISENSE=
RSENSE

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 VND600SP

APPLICATION SCHEMATIC

+5V

Rprot
INPUT1 VCC

Dld

Rprot CURRENT SENSE1 OUTPUT1

µC

Rprot INPUT2

Rprot CURRENT SENSE2

GND OUTPUT2

RSENSE1 VGND RGND

RSENSE2 DGND

GND PROTECTION NETWORK AGAINST If the calculated power dissipation leads to a large resistor
REVERSE BATTERY or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 1: Resistor in the ground line (RGND only). This Solution 2: A diode (DGND) in the ground line.
can be used with any type of load.
A resistor (RGND=1kΩ) should be inserted in parallel to
The following is an indication on how to dimension the DGND if the device will be driving an inductive load.
RGND resistor.
This small signal diode can be safely shared amongst
1) RGND ≤ 600mV / IS(on)max. several different HSDs. Also in this case, the presence of
2) RGND ≥ (−VCC) / (-IGND) the ground network will produce a shift (j 600mV) in the
where -IGND is the DC reverse ground pin current and can input thresholds and the status output values if the
be found in the absolute maximum rating section of the microprocessor ground is not common with the device
device’s datasheet. ground. This shift will not vary if more than one HSD
Power Dissipation in RGND (when VCC<0: during reverse shares the same diode/resistor network.
battery situations) is: LOAD DUMP PROTECTION
PD= (-VCC)2/RGND Dld is necessary (Transil or MOV) if the load dump peak
This resistor can be shared amongst several different voltage exceeds VCC max DC rating. The same applies if
HSD. Please note that the value of this resistor should be the device will be subject to transients on the VCC line that
calculated with formula (1) where IS(on)max becomes the are greater than the ones shown in the ISO T/R 7637/1
sum of the maximum on-state currents of the different table.
devices. µC I/Os PROTECTION:
Please note that if the microprocessor ground is not
common with the device ground then the RGND will If a ground protection network is used and negative
produce a shift (IS(on)max * RGND) in the input thresholds transient are present on the VCC line, the control pins will
and the status output values. This shift will vary be pulled negative. ST suggests to insert a resistor (Rprot)
depending on how many devices are ON in the case of in line to prevent the µC I/Os pins to latch-up.
several high side drivers sharing the same RGND. The value of these resistors is a compromise between the
leakage current of µC and the current required by the

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VND600SP

HSD I/Os (Input levels compatibility) with the latch-up limit Calculation example:
of µC I/Os. For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
-VCCpeak /Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax 5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.

Fig 1: IOUT/ISENSE versus IOUT

IOUT /ISENSE

6500

6000
max.Tj=-40°C
5500
max.Tj=25...150°C
5000
min.Tj=25...150°C typical value
4500

4000 min.Tj=-40°C

3500

3000
0 2 4 6 8 10 12 14 16
IOUT (A)

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 VND600SP

PowerSO-10 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
Q 1.70 0.067
α 0º 8º

0.10 A B
10 6
=

=
=

=
=

H E E2 E3 E1 E4
=
=

=
=
=

1 5
SEATING
PLANE

e B DETAIL”A” A

0.25 M C
Q
D
h = D1 =
= =
SEATING
PLANE
A
F
A1 A1

L
DETAIL”A”

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 VND600SP

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of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics

 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved.

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