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EE236 Report

This document summarizes an experiment to characterize the I-V properties of an N-channel MOSFET. It describes measuring the output characteristics by plotting drain current (ID) versus gate-source voltage (VGS) in the linear and saturation regions. It also involves measuring transfer characteristics by plotting ID versus drain-source voltage (VDS) for different VGS and observing the effect of body bias by plotting ID versus VGS for varying source-body voltage (VSB). Experimental results are presented through graphs and tables of voltage and current measurements.

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Avaneesh S.Subramanyam
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35 views9 pages

EE236 Report

This document summarizes an experiment to characterize the I-V properties of an N-channel MOSFET. It describes measuring the output characteristics by plotting drain current (ID) versus gate-source voltage (VGS) in the linear and saturation regions. It also involves measuring transfer characteristics by plotting ID versus drain-source voltage (VDS) for different VGS and observing the effect of body bias by plotting ID versus VGS for varying source-body voltage (VSB). Experimental results are presented through graphs and tables of voltage and current measurements.

Uploaded by

Avaneesh S.Subramanyam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EE236: Lab 8

N-channel MOSFET I-V Characteristics


Avaneesh Sai Subramanyam, 210070015
October 20, 2023

1 Overview of the experiment


1.1 Aim of the experiment
• Obtain output and transfer characteristics of an N-channel enhance-
ment type MOSFET (also called NMOS)

• Measure of trans-conductance and output resistance from the obtained


characteristics

• Investigate the effect of body bias on the characteristics of the NMOS

1.2 Methods
For the overall experiment, I used ALD1106 NMOS IC and 2 1kΩ poten-
tiometers. I also used 3 multimeters to measure the currents and voltages.
I connected them as shown in Figures 1 and 2 for the three parts of the
experiment.

2 Design
I used a breadboard, 3 multimeters and connecting wires along with the other
components listed above to build the circuits shown below.

1
The following are the circuit diagrams for all the parts:

Figure 1: Circuit Diagram, Part 1 and 2

Figure 2: Circuit Diagram, Part 3

3 Experimental results
3.1 Part-1
In this part we had to estimate the value of threshold voltage and trans-
conductance in linear and saturation region by plotting ID vs VGS .

2
For this part, I used ALD1106 NMOS IC and a 1kΩ potentiometer, along
with 2 multimeters, which I used to measure the values of VGS and ID . I
connected them along with other components as shown in Figure 1.

The readings I got are as follows:

For VDS = 200mA (Linear):

VGS (V) ID (µA)


0.0 0.000
0.3 0.000
0.6 2.25
0.96 44
1.25 91
1.54 134
1.9 181
2.17 215
2.44 244
2.93 293
3 300

Figure 3: ID vs VG S in Linear Region

3
For VDS = 3V (Saturation):

VGS (V) ID (mA)


0 0
0.34 0
0.61 2.43
0.94 52
1.26 171
1.58 366
1.94 651
2.22 931
2.5 1245
2.84 1662
3 1901

Figure 4: ID vs VG S in Saturation Region

3.2 Part-2
In this part, we had to plot ID vs VDS for 3 different values of VGS to see the
variation.

For this part, I used the same circuit as Part-1 with the same components
(shown in Figure 1).

4
The data I got is as follows:

For VGS = 1.5V:

VDS (V) ID (mA)


0 0.047
0.5 0.257
1 0.301
1.5 0.307
2 0.31
2.5 0.313
3 0.316
3.5 0.318
4 0.321
4.5 0.323
5 0.325

Figure 5: ID vs VDS at VGS = 1.5V

For VGS = 2.5V:

5
VDS (V) ID (mA)
0 0.097
0.5 0.605
1 1.055
1.5 1.175
2 1.214
2.5 1.232
3 1.248
3.5 1.253
4 1.265
4.5 1.274
5 1.281

Figure 6: ID vs VDS at VGS = 2.5V

For VGS = 3.5V:

6
VDS (V) ID (mA)
0 0.058
0.5 0.889
1 1.519
1.5 2.2
2 2.5
2.5 2.6
3 2.6
3.5 2.6
4 2.7
4.5 2.7
5 2.7

Figure 7: ID vs VDS at VGS = 3.5V

3.3 Part-3
In this part, we had to vary VSB and see the variation on ID vs VGS plot.

For this part, used ALD1106 NMOS IC and 2 1kΩ potentiometer, along with
3 multimeters, which I used to measure the values of VGS , VSB and ID . I

7
connected them along with other components as shown in Figure 2.

The data I got is as follows:

For VSB = 1V:

VGS (V) ID (mA)


0 0
0.53 0
1.02 0.005
1.54 0.094
2.03 0.168
2.52 0.227
3 0.274
3.5 0.316
4 0.351
4.52 0.382
5 0.405
For VSB = 2V:

VGS (V) ID (mA)


0 0
0.5 0
1.05 0
1.51 0.045
2.05 0.133
2.55 0.198
3.02 0.25
3.51 0.294
4.09 0.335
4.53 0.365
4.97 0.39
For VSB = 3V:

8
VGS (V) ID (mA)
0 0
0.49 0
1.02 0
1.54 0.012
2.04 0.1
2.54 0.171
3.05 0.23
3.51 0.274
3.99 0.313
4.57 0.351
4.97 0.376
Combined plots of the above data and part 1 (Id v/sVds ):

Figure 8: ID vs VGS for different VSB and VDS

4 Experiment completion status


I completed all the sections in lab.

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