M95P08-I M95P08-E

Datasheet

Ultra low-power 8-Mbit serial SPI page EEPROM with dual and quad outputs

Features
Interface
• Supports serial peripheral interface (SPI) and dual/quad outputs

High speed frequency

UFDFPN8 (2 x 3 mm)
• Clock frequency up to 80 MHz
• Fast read single/dual/quad output with one dummy byte
– Dual output data transfer up to 160 Mbits/s
– Quad output data transfer up to 320Mbits/s

SO8N (4.9 x 6.0 mm)

Memory
• 8 Mbits of page EEPROM
• 64-Kbyte blocks, 4-Kbyte sectors
WLCSP8 (1.264 × 1.363 mm) • Page size: 512-byte
• Two additional 512-byte identification pages

Supply voltage
• Wide voltage range: VCC from 1.6 to 3.6 V

Unsawn wafer Temperature

• Operating temperature range:

– -40 °C to +85 °C (industrial)
– -40 °C to +105 °C (extended)

Product status link Performance

M95P08-E • Write endurance: 500 kcycles on full temperature range

M95P08-I • Data retention
– 100 years
– 10 years after 500 kcycles
Product label
Ultra-low power consumption
• 0.6 μA (typ) in Deep power-down mode
• 16 μA (typ) in Standby mode
• 800 μA (typ) for read single at 10 MHz
• 1.5 mA (typ) for page write
• Current peak control < 3 mA

DS13999 - Rev 2 - September 2023 www.st.com

For further information contact your local STMicroelectronics sales office.
 M95P08-I M95P08-E

High write / erase performance

• Fast write / program / erase times:
– 2 ms (typ) for Byte and Page write (includes auto erase and program) for 512 bytes
– 1.2 ms (typ) for Page program (512 bytes)
– 1.1 ms (typ) for Page erase
– 1.3 ms (typ) for sector erase
– 4 ms (typ) for block erase
– 4 ms (typ) for chip erase
• Page program with buffer load

Advanced features
• ECC for high memory reliability (DEC, TED)
• Schmitt trigger inputs for noise filtering
• Output buffer programmable strength
• Operating status flags for ISO26262
• Software reset
• Write protection by block, with top/bottom option
• Unique ID upon request
• Electronic identification
• Supports SFDP (serial flash discoverable parameters) mode
• JEDEC standard manufacturer identification

Package
• ECOPACK2 (RoHS compliant) and halogen-free packages:
– DFN8 2 x 3 mm
– SO8N
– WLCSP8

ESD protection
• Enhanced ESD HBM (human body model)

DS13999 - Rev 2 page 2/66

 M95P08-I M95P08-E
Description

1 Description

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte
flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of
EEPROM technology.
The M95P08-I and M95P08-E are an 8-Mbit SPI page EEPROM device organized as 2048 programmable pages
of 512 bytes each, accessed through an SPI bus with high-performance dual- and quad SPI outputs.
The devices offer two additional (identification) 512-byte pages:
• The first contains identification data and, upon request, the UID.
• The second can be used to store sensitive application parameters, which can (later) be permanently locked
in read-only mode.
Additional status, configuration, and volatile registers set the desired device configuration, while the safety
register provides information on the device status.
The M95P08-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40 °C to
+85 °C.
The M95P08-E offers an extended temperature range from -40 °C to +105 °C. The device supports a clock
frequency of up to 80 MHz.
The M95P08-I and M95P08-E offer byte and page write instructions of up to 512 bytes. Write instructions consist
in self-timed auto erase and program operations, resulting in flexible data byte management.
The devices also accept page/block/sector/chip erase commands to set the memory to an erased state.
The memory can then be fast-programmed by 512-byte pages, and further optimized using the Page program
with buffer load instruction to hide the SPI communication latency.

Table 1. Signal names

Pad number Signal name Function Direction

1 S Chip select Input

2 Q-DQ1 Serial data output / Serial data output 1 for dual / quad Output
3 W-DQ2 Write protect / Serial data output 2 for quad Input / Output
4 VSS Ground -
5 D-DQ0 Serial data input / Serial data output 0 for dual / quad Input / Output
6 C Serial clock Input
7 HOLD-DQ3 Hold / Serial data output 3 for quad Input / Output
8 VCC Supply voltage -

Figure 1. 8-pin package connections (top view)

S 1 8 VCC

Q-DQ1 2
M95P08-I 7 HOLD-DQ3

W-DQ2 3 M95P08-E 6 C
DT72392V1

VSS 4 5 D-DQ0

DS13999 - Rev 2 page 3/66

 M95P08-I M95P08-E
Description

Figure 2. 8-bump ultra thin WLCSP8 connection

GND W W GND

S S

HOLD Q Q HOLD

VCC VCC
D CLK CLK D

DT73028V1
Marking side (top view) Bump side (bottom view)

DS13999 - Rev 2 page 4/66

 M95P08-I M95P08-E
Memory

2 Memory

2.1 Block diagram

The device contains: the memory array, the registers, the identification pages, the high voltage, and the decoding
blocks.(see Figure 3).
The memory array is divided into 2048 erasable pages of 512 bytes.
The PEC (program erase controller) executes all the algorithms managing the correct execution of erase and
program operations. It mainly improves the cycling and data retention performance, and keeps erase and
program times at the typical value during the product operating life.
A Deep power down mode is available to minimize the power consumption (switching OFF the circuitry of several
internal blocks). In this configuration, the current consumption is reduced to ICC2 (see Table 23. DC characteristics
(M95P08-I - industrial temperature range) and Table 24. DC characteristics (M95P08-E - extended temperature
range)).

Figure 3. Block diagram

SPI

Program, erase and read controller + PEC

HV mgmt
Analog pumps reference

Sense amps + Decoder Y

Pads

Power
mgmt
Decoder X

Memory array

Registers
Identification pages

OFF in Deep power down

DS13999 - Rev 2 page 5/66

 M95P08-I M95P08-E
Memory map

2.2 Memory map

The memory array is divided into 2048 erasable pages of 512 bytes, and is organized either as 256 erasable
sectors of 4 Kbytes, 16 erasable blocks of 64 Kbytes, or as an entirely erasable array.
The device offers two additional (identification) 512-byte pages. The first contains identification data and, upon
request, the UID. The second page can be used to store sensitive application parameters that can (later) be
permanently locked in Read-only mode.
The device features a memory protection scheme with block granularity coded in four non-volatile bits of the
status register.
The memory array configuration is organized as:
• 1048576 bytes
• 16 blocks of 64 Kbytes, or 256 sectors of 4 Kbytes, or 2048 pages of 512 bytes, hence:
– each block contains 16 sectors
– each sector contains 8 pages
– each page contains 512 bytes
See the address range in Table 2.

DS13999 - Rev 2 page 6/66

 M95P08-I M95P08-E
Memory map

Table 2. Address range by sector

Address range (hexadecimal)

64 Kbytes block number 4 Kbytes sector number
Start End

255 FF000 FFFFF

254 FE000 FEFFF
253 FD000 FDFFF
252 FC000 FCFFF
251 FB000 FBFFF
250 FA000 FAFFF
249 F9000 F9FFF
248 F8000 F8FFF
15
247 F7000 F7FFF
246 F6000 F6FFF
245 F5000 F5FFF
244 F4000 F4FFF
243 F3000 F3FFF
242 F2000 F2FFF
241 F1000 F1FFF
240 F0000 F0FFF
…. …. …. ….
15 F000 FFFF
14 E000 EFFF
13 D000 DFFF
12 C000 CFFF
11 B000 BFFF
10 A000 AFFF
9 9000 9FFF
8 8000 8FFF
0
7 7000 7FFF
6 6000 6FFF
5 5000 5FFF
4 4000 4FFF
3 3000 3FFF
2 2000 2FFF
1 1000 1FFF
0 0 FFF

DS13999 - Rev 2 page 7/66

 M95P08-I M95P08-E
Memory map

Table 3. Example of pages inside sector 0

Sector 0 Page number Start address (hexadecimal) End address (hexadecimal)

Last page 7 E00 FFF

6 C00 DFF
….. ….. …..
…..
2 400 5FF
1 200 3FF
First page 0 000 1FF

DS13999 - Rev 2 page 8/66

 M95P08-I M95P08-E
Signal description

3 Signal description

During all operations, VCC must be held stable and within the specified valid range VCC(min) to VCC(max).
All the input and output signals, described in the following sections, must be held high or low or transit between
levels, according to VIH, VOH, VIL, or VOL voltages specified in Table 25. DC characteristics - other parameters).

3.1 Serial data output (Q-DQ1)

This output is a push-pull buffer. The signal is used to transfer data out of the device, serially. Data are shifted out
on the falling edge of the serial clock (C).
With the dual-output and quad-output read commands, this pin remains an output (DQ1) in conjunction with other
pins, to allow four bits of data on DQ0-3 pins to be clocked out on every falling edge of SCK.
To maintain consistency with the SPI nomenclature, the data output Q (DQ1) pin is referenced as the MISO pin,
unless specifically addressing the dual output and quad output modes (in this case it is referenced to as DQ1).
The serial output pin is in a high impedance state (high-Z) whenever the device is deselected (S is de-asserted).

3.2 Serial data input (D-DQ0)

This is a CMOS input with no internal pull-up/down and an output push-pull buffer. The signal transfers data
serially into the device. It receives instructions, addresses, and the data to be written. Values are latched on the
rising edge of the serial clock (C).
With the dual-output and quad-output read commands, this pin becomes a push/pull output buffer (DQ0) in
conjunction with other pins to allow four bits of data on DQ0-3 pins to be clocked out on every falling edge of
SCK.
To maintain consistency with the SPI nomenclature, the data input D (DQ0) pin is referenced as MOSI.
The D pin is in high-Z whenever the device is deselected (S is deasserted).

3.3 Serial clock (C)

This is a CMOS input with no internal pull up/down. This signal synchronizes the timing of the serial interface. The
instructions, the addresses, or the data present on the serial data input (D) are latched on the rising edge of the
serial clock (C), while the output data on the DQn pins is changed after the falling edge of the serial clock (C).

3.4 Chip select (S)

This is a CMOS input with no internal pull up/down. When this signal is high, the device is deselected and serial
data outputs (DQ0-3) are in high impedance. The device is in Standby power mode (not deep power-down mode)
unless an internal write cycle is in progress.
Driving chip select (S) low selects the device, putting it in active power mode.
After power-up, a falling edge on chip select (S) is required prior to the start of any instruction. A low to high
transition is required to end an operation.
An external pull-up on S is required so that at power-up the voltage on S follows the power supply voltage on
VCC.

3.5 Hold (HOLD-DQ3)

This pin is a CMOS input with no internal pull-up/down, and a push-pull output buffer. This signal is used to pause
all serial communications with the device, without deselecting it.
During the hold condition, the serial data output (Q) is high-Z, and the serial data input (D) and serial clock (C) are
don’t care.
To start the hold condition, the device must be selected by driving chip select (S) low.
When the device is selected with HOLD low and C high, it switches into the hold condition when C transits low.
The HOLD pin supports dual and quad output reads (see Section 4.3 and Section 4.4).
With the fast read quad output command, the HOLD function is no longer available after the last bit of the third
address bytes of the command, and the HOLD pin becomes an output pin (DQ3). In conjunction with other pins,
this allows four-bit data to be clocked into DQ3 on every falling edge of SCK.

DS13999 - Rev 2 page 9/66

 M95P08-I M95P08-E
Write protect (W-DQ2)

For consistency with the SPI nomenclature, this pin is referenced as the HOLD pin, unless specifically addressing
the quad output mode, in which case it is referenced as DQ3.

3.6 Write protect (W-DQ2)

This pin is a CMOS input with no internal pull-up/down, and an output push-pull buffer. The main purpose of this
signal is to freeze the size of the area of memory protected against write instructions (as specified by the values in
the BPn and TB bits of the status register).
This pin must be driven either high or low, and must be stable during all write instructions. It supports dual and
quad output read (see Section 4.3 and Section 4.4).
With the fast read quad output command, the write protect pin (W-DQ2) becomes an output pin, after the last bit
of the third address bytes of the command. In conjunction with other pins, this allows four bits of data on DQ2 to
be clocked-in on every falling edge of SCK.
For consistency with the SPI nomenclature, this pin is referenced as the W, unless specifically addressing the
quad output mode, in which case it is referenced as DQ2.

3.7 VCC (VCC, supply voltage)

VCC is the device core power supply.

3.8 VSS (VSS, ground)

VSS is the reference for all signals, including the VCC supply voltage.

DS13999 - Rev 2 page 10/66

 M95P08-I M95P08-E
Device operation

4 Device operation

4.1 Connecting to the SPI bus

All instructions, addresses, and input data bytes are shifted in to the device, the most significant bit first. The
serial data input (D) is sampled on the first rising edge of the serial clock (C) after chip select (S) goes low.
All output data bytes are shifted out of the device, the most significant bit first. The serial data output (on DQn
pins) is output on the first falling edge of the serial clock (C) after eight instruction bits (such as the read from
memory array and read status register instructions) have been clocked into the device.
The write protect (W) and hold (HOLD) signals must be driven high or low as appropriate.

Figure 4. Bus master and memory devices on the SPI bus

Vss
Vcc

R R R

HOLD
W
SPI Interface with MOSI
CPOL,CPHA) =
MISO
(0,0 or (1,1)
C
Vcc Vcc Vcc
C Q,DQ1 D,DQ0 C Q,DQ1 D,DQ0 C Q,DQ1 D,DQ0
SPI Bus Master Vss Vss Vss

SPI Memory SPI Memory SPI Memory

Device Device Device

W,DQ2 HOLD,DQ3 W,DQ2 HOLD,DQ3 W,DQ2 HOLD,DQ3

S S S
CS3 CS2 CS1

Figure 4 shows an example of three memory devices connected to an SPI bus master. Only one memory device
is selected at a time, so only one memory drives the serial data output (Q) line at a time. The other memory
devices are high impedance.
The pull-up resistor R (whose typical value is 100 kΩ) ensures that a device is not selected if the bus master
leaves the S line in the high impedance state.

DS13999 - Rev 2 page 11/66

 M95P08-I M95P08-E
SPI modes

4.2 SPI modes

This device can be driven by a microcontroller through its SPI peripheral running in either of the following two
modes:
• CPOL = 0, CPHA = 0
• CPOL = 1, CPHA = 1
In these modes, input data is latched on the rising edge of the serial clock (C), and data is output on the falling
edge of the serial clock (C).
The difference between these two modes, as shown in Figure 5, is the polarity of the clock state when the bus
master is in Standby mode and not transferring data:
• C remains at 0 for (CPOL = 0, CPHA = 0)
• C remains at 1 for (CPOL = 1, CPHA = 1)

Figure 5. SPI modes supported

CPOL CPHA
0 0 C

1 1 C

D MSB

Q MSB

Because at a given instant only one device is selected, only one device drives the serial data output (n-DQn) at a
time. The other devices are in high-Z. An example of three devices connected to an MCU through an SPI bus is
shown in Figure 4. Bus master and memory devices on the SPI bus.

4.3 Dual output read

The M95P08-I and M95P08-E feature a dual output read mode that allows two bits of data to be clocked out of
the device on every clock cycle to improve throughput. With the fast read dual output command, the D pin
becomes an output (D‑DQ0) along with the Q‑DQ1 pin.

4.4 Quad output read

The M95P08-I and M95P08-E feature a quad output read mode that allows four bits of data to be clocked out of
the device on every clock cycle to improve throughput. With the fast read quad output command, the D, W, and
HOLD pins become outputs (D-DQ0, W-DQ2, HOLD-DQ3), along with the Q-DQ1 pin.

4.5 Supply voltage

Prior to selecting the memory and issuing instructions to it, a valid and stable supply voltage within the specified
VCC(min) to VCC(max) range must be applied (see Table 18. Operating conditions). This voltage must remain stable
and valid until the end of the transmission of the instruction and, for a modify instruction, until the completion of
the internal write cycle (see Table 26. Programming times).
To ensure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor
(usually in the range of 10 and 100 nF) close to the VCC / VSS device pins.

DS13999 - Rev 2 page 12/66

 M95P08-I M95P08-E
Power-up conditions

4.6 Power-up conditions

When the power supply is turned on, VCC rises continuously from VSS to VCC. During this time, the chip select (S)
line is not allowed to float but follows the VCC voltage. It is therefore recommended to connect the S line to VCC
via a suitable pull-up resistor (see Figure 4. Bus master and memory devices on the SPI bus).
In addition, the chip select (S) input offers a built-in safety feature (it is edge-sensitive, as well as level‑sensitive).
Thus, after power-up, the device is not selected until a falling edge is first detected on S. This ensures that chip
select (S) is high, before going low to start the first operation.
The VCC voltage must rise continuously from 0 V up to the minimum VCC operating voltage defined
inTable 18. Operating conditions.

4.7 Power-down conditions

During power-down (continuous decrease of the supply voltage below the minimum VCC operating voltage
defined in Table 18. Operating conditions), the device must be:
• deselected (S must follow the voltage applied on VCC)
• in Standby power mode (there must not be any internal write cycle in progress).

4.8 Active power, standby power, and deep power-down modes

When chip select (S) is low, the device is selected, and in active power mode.
When chip select (S) is high, the device is deselected, but remains in active power mode until all internal cycles
have completed (program, erase, write status register). The device then goes into standby power mode. The
device consumption drops to ICC1 as specified in Table 23. DC characteristics (M95P08-I - industrial temperature
range) and Table 24. DC characteristics (M95P08-E - extended temperature range).
Deep power-down mode is entered when the deep power-down command is executed. The device consumption
drops further to ICC2. The device remains in this mode until the release from the power-down command is
executed. While in deep power-down mode the device ignores all write, program and erase commands. This
provides an extra software protection mechanism when the device is not in active use, by protecting it from
inadvertent operations. For further information, see Section 6.21 Deep power-down enter (B9h).

4.9 Device reset

To prevent erroneous instruction decoding and inadvertent programming, write or erase operations during
power‑up, a power‑on‑reset (POR) circuit is included. At power-up, the device does not respond to any
instructions until VCC reaches the POR threshold voltage. This threshold is lower than the minimum VCC operating
voltage (see Table 18. Operating conditions).
At power-up, when VCC passes over the POR threshold, the device is reset, and is in the following state:
• in standby power mode
• deselected
• status register:
– write enable latch (WEL) bit reset to 0
– write in progress (WIP) bit reset to 0
– all nonvolatile bits unchanged
• configurable and safety registers:
– all volatile bits reset to 0
– all nonvolatile bits (DRV1, DRV0) unchanged
• volatile register:
– all bits reset to 0 except BUFLD set to 1
Important: The device must not be accessed until VCC reaches a valid and stable level within the specified VCC(min) to
VCC(max) range, as defined in Table 18. Operating conditions.

DS13999 - Rev 2 page 13/66

 M95P08-I M95P08-E
Hold condition

4.10 Hold condition

The Hold (HOLD) signal is used to pause serial communications with the device, without resetting the clocking
sequence. However, setting this signal low does not terminate Write Status register, Program, Write, or Erase
cycles that are in progress.
To enter the Hold condition, the device must be selected with Chip select (S) low.
During the Hold condition, the Serial data output (Q) is high-Z, and the Serial data input (D) and Serial clock (C)
are Don’t care.
Normally, the device is kept selected for the duration of the Hold condition. This ensures that the internal logic
state remains unchanged from the moment of entry into the Hold condition. Deselecting the device during the
Hold condition resets the state of the device. This mechanism can be used to reset the ongoing processes.
Note: This resets the internal logic, except the WEL and WIP bits of the Status register.
The Hold condition starts when the HOLD signal is driven low when Serial clock (C) is already low (as shown in
Figure 6). If the falling edge does not coincide with C being low, the hold condition starts when C next goes low.
The Hold condition ends on the rising edge of the HOLD signal, if this coincides with C being low. If the rising
edge does not coincide with C being low, the hold condition ends when C next goes low.

Figure 6. Hold condition activation

HOLD

Hold Hold
condition condition

Figure 6 also shows what happens if the rising and falling edges are not timed to coincide with Serial clock (C)
being low.
To restart communication with the device, it is necessary to drive HOLD high, and then to drive chip select (S) low.
This prevents the device from returning to the hold condition.

4.11 ECC
The error correction code (ECC) is an internal logic function that significantly improves the data integrity of the
M95P08-I and M95P08-E. It is always active, and is transparent for SPI communication.
The ECC offers double-bit correction over 16 bytes (128 bits), and triple-bit error detection. When a 3-error
detection occurs, no correction is applied to the data. The single, double, and triple error detection bits are
readable in the safety register.
The ECC flag information is cumulative, meaning that on the same read instruction the flags are raised as soon
as a correction or a detection occurs, and all flags may be raised. The status bit is detailed in Section 5.2.2 Safety
register.

DS13999 - Rev 2 page 14/66

 M95P08-I M95P08-E
Data protection and protocol control

4.12 Data protection and protocol control

The device features the following data protection mechanisms:
• Power on reset and an internal timer (tPUW) can provide protection against inadvertent changes while the
power supply is outside the operating specification.
• Before accepting the execution of the Program, Write and Erase and Write status register instructions, the
device checks whether the number of clock pulses comprising the instructions is a multiple of eight.
• For any instruction to be accepted, and executed, Chip select (S) must be driven high after the rising edge
of the Serial clock (C) for the last bit of the instruction, and before the next rising edge of the Serial clock
(C).
• All instructions that modify data must be preceded by a Write enable (WREN) instruction to set the write
enable latch (WEL) bit.
• The block protection (BP2, BP1 and BP0) and TB bits in the Status register are used to configure part of
the memory as read-only.
• The Write protect (W) signal is used to protect the block protection (BP2, BP1, BP0) and TB bits in the
Status register in conjunction with SRWD bit.
In addition to the low power consumption feature, the Deep power-down mode offers extra software protection: all
program and erase commands are ignored when the device is in this mode.

4.12.1 Memory protection scheme

The memory can be configured as read-only using the block protection (BP2, BP1, BP0) and TB bits, as shown in
Table 4. Refer to Section 5.1 Status register for more information on the BPn bits.

Table 4. Protected area sizes

Protected size(1)
TB BP2 BP1 BP0 Protected block(s) Protected addresses Protected portion
(Byte)

X 0 0 0 None None None None

0 0 0 1 15 0F0000h – 0FFFFFh 64 K Upper 1/16
0 0 1 0 14 and 15 0E0000h – 0FFFFFh 128 K Upper 1/8
0 0 1 1 From 12 to 15 0C0000h – 0FFFFFh 256 K Upper 1/4
0 1 0 0 From 8 to 15 080000h – 0FFFFFh 512 K Upper 1/2
1 0 0 1 0 000000h – 00FFFFh 64 K Lower 1/16
1 0 1 0 0 and 1 000000h – 01FFFFh 128 K Lower 1/8
1 0 1 1 From 0 to 3 000000h – 03FFFFh 256 K Lower 1/4
1 1 0 0 From 0 to 7 000000h – 07FFFFh 512 K Lower 1/2
X 1 0 1 From 0 to 15 000000h – 0FFFFFh 1M All
X 1 1 0 From 0 to 15 000000h – 0FFFFFh 1M All
X 1 1 1 From 0 to 15 000000h – 0FFFFFh 1M All

1. The device is ready to accept any ERASE commands only if all block protection bits (BP2, BP1, BP0) are set to 0.

DS13999 - Rev 2 page 15/66

 M95P08-I M95P08-E
Polling during a program, write, or erase cycle

4.12.2 Hardware data protection

Hardware data protection is implemented using the write protect signal applied on the W pin. This freezes the
nonvolatile bits of the status register in a read-only mode. In this mode, the block protection bits (BPn), the
top / bottom bit (TB), and the status register write disable bit (SRWD) are protected (for further details, refer to
Section 5.1 Status register).

Table 5. Protection modes

Memory content(1)
SRWD Write protection
W Mode Protected
bit of the status register Unprotected area
area

1 0 Software • Status register is writable (if the WREN

0 0 protected instruction has set the WEL bit)
(SPM) • BP2, BP1, BP0, and TB bits can be changed
1 1 Write Ready to accept write
protected instructions
Hardware • Status register is hardware write-protected
0 1 protected • BP2, BP1, BP0, and TB bits cannot be
(HPM) changed

1. As defined by the values in the block protection (BP2, BP1, BP0) and TB bits of the status register.

4.13 Polling during a program, write, or erase cycle

A reduction in the time taken to complete the following commands is possible by not waiting for the worst-case
delay (tPW, tWSCR, tPP, tSE, tBE, or tCE) to elapse. See Table 26. Programming times:
• Write
• Write status register
• Program
• Erase (page, sector, block, and chip erase)
The write in progress (WIP) bit in the status register is provided so that the application program can monitor
whether the write, program, or erase cycle is complete (refer to Section 5.1 Status register).

DS13999 - Rev 2 page 16/66

 M95P08-I M95P08-E
Status, configurable, safety, volatile, and SFDP registers

5 Status, configurable, safety, volatile, and SFDP registers

These registers provide:

• the status of the availability and the setting of the memory array
• the status of the output buffer strength
• the status of the device after power up and ECC bit detection
The write status/configuration register instructions can be used to configure the device write protection features.

5.1 Status register

The status register can be read with the RDSR instruction in loop mode. The nonvolatile bits SRWD, TB, BP2,
BP1, and BP0 can be changed with the WRSR instruction when sending a data byte. The MSB (b7) is sent first.

Table 6. Status register format

b7 b6 b5 b4 b3 b2 b1 b0

SRWD TB x(1) BP2 BP1 BP0 WEL WIP

1. x: Don't care bit.

Status register write protect (SRWD) bit

The nonvolatile status register write disable (SRWD) bit is used in conjunction with the write protect (W) signal.
The status register write disable (SRWD) bit and write protect (W) signals enable the device to be put into
hardware protected mode (when the status register write disable (SRWD) bit is set to 1, and write protect (W) is
driven low). In this mode, the nonvolatile bits of the status register (SRWD, BP2, BP1, BP0 and TB) become
read‑only bits, and the write status register (WRSR) instruction is no longer accepted for execution. The
protection modes are described in Table 5. Protection modes.

Top / bottom protection (TB) bit

The nonvolatile Top/Bottom bit (TB) controls whether the block protection bits (BP2, BP1, BP0) protect from the
top (TB = 0) or from the bottom (TB = 1) of the array, as shown in Table 4. Protected area sizes. The factory
default setting is TB = 0. The TB bit can be set with the write status register instruction, depending on the state of
the SRWD and WEL bits.

Block protection (BP2, BP1, BP0) bits

These are nonvolatile read/write bits in the status register, which provide write protection control and status. All,
none, or a portion of the memory array can be protected from program and erase instructions (see
Table 4. Protected area sizes). The factory default setting for the block protection bits is 0 (array unprotected).
The block protection bits can be set using the write status register instruction.

Write enable latch (WEL) bit

This is a read-only bit in the status register, which is set to 1 after executing a write enable instruction. The WEL
status bit is cleared to 0 when the device is write disabled. A write disable state occurs upon power-up, or after
correct completion of any of the following instructions: Write disable, write, page program, sector erase, block
erase, chip erase, write status register.

Write in progress (WIP) bit

This is a read-only bit in the status register, set to 1 when:
1. the device is executing a modify operation. During this time, the device ignores further instructions except for
the read status register. When the program, write, erase, or write status/configuration register instruction has
completed, the WIP bit is cleared to 0, indicating that the device is ready for further instructions.
2. the device is in power-up (see Table 14. Power-up/down conditions).

DS13999 - Rev 2 page 17/66

 M95P08-I M95P08-E
Configuration and safety register format

5.2 Configuration and safety register format

5.2.1 Configuration register

This register can be read with the RDCR instruction in loop mode. The two nonvolatile bits DRV[1:0] can be
changed with the WRSR instruction when sending a second data byte. The MSB (b7) is sent first.

Table 7. Configuration register format

b7 b6 b5 b4 b3 b2 b1 b0

x(1) DRV1 DRV0 x(1) x(1) x(1) x(1) LID

1. x: Don't care bit.

The nonvolatile DRV1 and DRV0 bits determine the output driver strength (RON of the buffer) for the read
operations. The values of DRV1 and DRV0 are given in Table 8. Output driver strength.
The nonvolatile LID bit determines if the identification page is locked or not. When LID = 0, the identification page
can be modified by the user. When LID = 1, this page is locked in read-only mode and cannot be changed. The
LID bit can be modified with a WRSR instruction when two data bytes are sent, see Section 6.8 Write status and
configuration registers (01h).

Table 8. Output driver strength

DRV1, DRV0 Buffer strength RON typical at 3.3 V / 25 °C RON typical at 1.8 V / 25 °C

0, 0 High 30 Ω 50 Ω
0, 1 Medium 110 Ω 200 Ω
1, 0 Low 175 Ω 300 Ω
1, 1 Default 50 Ω 90 Ω

Note: The delivered state is with buffer strength "Default".

5.2.2 Safety register

This 8-bit register can be read with the RDCR instruction in loop mode.
All bits are volatile and are read-only. They can be reset with the CLRSF instruction.

Table 9. Safety register format

b7 b6 b5 b4 b3 b2 b1 b0

PAMAF PUF ERF PRF ECC1C ECC2C ECC3D ECC3DS

Protected array modify attempt flag (PAMAF) bit

This bit indicates whether a modify operation to a protected memory area has been attempted:
• 0: clear
• 1: modify attempt detected
This is a sticky volatile bit that can be reset to 0 only by issuing a clear safety flag instruction. This flag is cleared
to 0 after a successful power-up or by a software reset instruction.

DS13999 - Rev 2 page 18/66

 M95P08-I M95P08-E
Configuration and safety register format

Power-up flag (PUF) bit

This bit indicates if the power-up operation was completed successfully:
• 0: successful
• 1: error
This volatile bit is refreshed at each power-up, and after a software reset instruction. The flag is cleared to 0 by
the clear safety flag instruction.
Note: If the PUF bit remains at 1 after the power-up, the status register is read as FF.

Erase flag (ERF) bit

This bit indicates if a previously executed erase operation was completed successfully.
• 0: successful
• 1: error
This volatile bit is refreshed at each erase/write operation. This flag is cleared to 0 at power-up, or by a clear
safety flag or software reset instruction.

Program flag (PRF) bit

This bit indicates if the previously executed program operation was completed successfully.
• 0: successful
• 1: error
This volatile bit is refreshed at each program/write operation. In buffer mode, the flag becomes a sticky flag. This
flag is cleared to 0 at power-up, or by a clear safety flag or software reset instruction.

ECC1 correction flag (ECC1C) bit

This bit indicates if the ECC corrected a single-bit error during a previously executed read/program/write
operation.
• 0: no correction
• 1: correction done
This volatile bit is refreshed at each read/program/write operation. This flag is cleared to 0 at power-up, or after a
clear safety flag or software reset instruction.

ECC2 correction flag (ECC2C) bit

This bit indicates if the ECC corrected a double-bit error in a previously executed read/program/write operation.
• 0: no correction
• 1: correction done
This volatile bit is refreshed at each read/program/write operation. This flag is cleared to 0 at power-up, or after a
clear safety flag or software reset instruction.

ECC 3 detection flag (ECC3D) bit

This bit indicates if the ECC detected a triple-bit error in at least one word of 16 bytes in a previously executed
read/program/write operation.
• 0: no detection
• 1: error detection
This volatile bit is refreshed at each read/program/write operation. This flag is cleared to 0 at power-up, or after a
clear safety flag or software reset instruction.

DS13999 - Rev 2 page 19/66

 M95P08-I M95P08-E
Volatile register format

ECC 3 detection flag (ECC3DS) bit

This bit indicates if the ECC detected a triple bit error in at least one word of 16 bytes in a previously executed
read/program/write operation.
• 0: no detection
• 1: error detection
This is a sticky volatile bit that can only be reset by issuing a clear safety flag instruction. This flag is cleared to 0
at power-up, or after a software reset instruction.
The ECC flag information is cumulative: on the same read instruction, the flags are raised as soon as a correction
or a detection occurs, and all flags may be raised.

5.3 Volatile register format

This byte can be read with the RDVR instruction in loop mode. The volatile bit BUFEN is enabled with WRVR
instruction.

Table 10. Volatile register format

b7 b6 b5 b4 b3 b2 b1 b0

x(1) x(1) x(1) x(1) x(1) x(1) BUFEN BUFLD

1. x: Don't care bit.

Buffer loading activation (BUFEN) bit

This Buffer mode is activated by setting the volatile configuration bit (BUFEN) to 1 with a WREN + WRVR
instruction.
When this bit is set to 1, it allows Page program instruction decoding and buffering while a previous Program
instruction is executing. When this bit is at 0, a Page program instruction is not decoded while the program is
being executed. At power-up, or after Software reset instruction, this flag is cleared to 0.

Buffer loading status (BUFLD) bit

When this bit is at 0, the buffer is free and accepts the loading of a new Page program instruction. When this bit is
at 1, the buffer is full and a Page program instruction is discarded and lost.
This bit:
• is set to 1 at power up
• switches to 0 when BUFEN is set to 1
• is automatically set to 1 when BUFEN is 0

5.4 SFDP register format

The M95P08-I and M95P08-E feature a 512-byte serial flash discoverable parameter (SFDP) register that
contains information about device configuration, available instructions, and other features, in a standard set of
internal parameter tables.
These parameter tables can be interrogated by host-system software, enabling the adjustments needed to
accommodate divergent features from multiple vendors.
The Read SFDP register instruction is compatible with the SFDP standard and with the JEDEC standard
JESD216.
For further information, refer to www.st.com “Serial flash discovery parameters for M95P family” documentation.

DS13999 - Rev 2 page 20/66

 M95P08-I M95P08-E
Instructions

6 Instructions

All instructions can run at the maximum frequency of 80 MHz, except read instructions (READ and RDID), which
can run at 50 MHz maximum.
Each command is composed of several bytes (the MSB is transmitted first), initiated with the instruction byte as
summarized in Table 11. If an invalid instruction (that is, one not contained in Table 11) is sent, the device
automatically enters a wait state until the device or the state is deselected.

Table 11. M95P08-I and M95P08-E instruction set

Instruction Number of bytes

Frequency
Binary (MHz)
Name Description Hex code Address Dummy Data (byte)
code

WREN Write enable 0000 0110 06 0 0 0

WRDI Write disable 0000 0100 04 0 0 0
80
RDSR Read status register 0000 0101 05 0 0 1 (rollover)
WRSR Write status register 0000 0001 01 0 0 1 or 2
READ Read data single output 0000 0011 03 3 0 50
Fast read single output with one dummy
FREAD 0000 1011 0B 3 1
byte
Fast read dual output with one dummy 1 to 1 M (rollover)
FDREAD 0011 1011 3B 3 1
byte
Fast read quad output with one dummy
FQREAD 0110 1011 6B 3 1
byte
PGWR Page write (erase and program) 0000 0010 02 3 0 1 to 512 80
PGPR Page program 0000 1010 0A 3 0 1 to 512
PGER Page erase (512 bytes) 1101 1011 DB 3 0 0
SCER Sector erase (4 Kbytes) 0010 0000 20 3 0 0
BKER Block erase (64 Kbytes) 1101 1000 D8 3 0 0
CHER Chip erase 1100 0111 C7 0 0 0
RDID Read identification (EE) 1000 0011 83 3 0 1 to 1024 50
FRDID Fast read identification (EE) 1000 1011 8B 3 1 (rollover)

WRID Write identification page (EE) 1000 0010 82 3 0 1 to 512

DPD Deep power- down enter 1011 1001 B9 0 0 0
RDPD Deep power- down release 1010 1011 AB 0 0 0
JEDID JEDEC identification (SF) 1001 1111 9F 0 0 3
RDCR Read configuration and safety register 0001 0101 15 0 0 2 (rollover)
80
RDVR Read volatile register 1000 0101 85 0 0 1
WRVR Write volatile register 1000 0001 81 0 0 1
CLRSF Clear safety sticky flags 0101 0000 50 0 0 0
RDSFDP Read SFDP 0101 1010 5A 3 1 1 to 512 (rollover)
RSTEN Enable reset 0110 0110 66 0 0 0
RESET Software reset 1001 1001 99 0 0 0

DS13999 - Rev 2 page 21/66

 M95P08-I M95P08-E
Write enable (06h)

6.1 Write enable (06h)

The write enable (WREN) instruction sets the write enable latch (WEL) bit in the status register to 1. The WEL bit
must be set before every page program, page write, page erase, sector erase, block erase, chip erase, write
status register, write volatile register, and write identification page instruction.
The write enable instruction is entered by driving S low, shifting the instruction code 06h into the data input (D) pin
on the rising edge of C, and then driving S high. The S pin must be driven high after the eighth bit has been
latched. If this is not done the write enable instruction is not executed.

Figure 7. Write enable

0 1 2 3 4 5 6 7

Q High impedance

WREN instruction
MS54391V1

6.2 Write disable (04h)

The write disable (WRDI) instruction resets the write enable latch (WEL) bit in the status register to 0. The write
disable instruction is entered by driving S low, shifting the instruction code 04h into the D pin, and then driving S
high.
The S pin must be driven high after the eighth bit has been latched. If this is not done the write disable instruction
is not executed.

Figure 8. Write disable

-3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11

Q High impedance

Write disable instruction

MS54396V1

DS13999 - Rev 2 page 22/66

 M95P08-I M95P08-E
Read status register (05h)

6.3 Read status register (05h)

The Read status register (RDSR) instruction is used to read this 8-bit register, whose content is described in
Section 5.1 Status register.
The instruction is entered by driving S low and shifting the instruction code 05h into the D pin on the rising edge of
C. The status register bits are then shifted out (MSB first) on the Q pin, on the falling edge of C as shown in
Figure 9.

Figure 9. Read status register

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Q High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7

RDSR instruction Status register content Status register content

MS69273V1

This instruction can be used at any time, even while a program, erase or write status register cycle is in progress.
The WIP status bit can be checked to determine when the cycle is complete, and if the device is ready to accept
another instruction. The status register can be read continuously in loop mode. The instruction is completed by
driving S high.

6.4 Read Configuration and Safety registers (15h)

The Read Configuration and Safety registers (RDCR) instruction reads the two Configuration and Safety register
bytes (one for each register). It is sent without an address, and the device first outputs the Configuration register
byte, followed by the Safety register byte, in loop mode.
The instruction is entered by driving S low, and shifting the instruction code 15h into the D pin on the rising edge
of C. The Configuration and Safety register bit values are then shifted out (MSB first) on the Q pin, on the falling
edge of C as shown in Figure 10. The Configuration and Safety registers can be read continuously.
The instruction is completed by driving S high.

Figure 10. Read Configuration and Safety registers

-3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Q High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7

RDCR instruction Configuration byte Safety byte

MS55402V1

The content of Configuration and Safety registers is described in Section 5.2 Configuration and safety register
format.

DS13999 - Rev 2 page 23/66

 M95P08-I M95P08-E
Clear safety register (50h)

6.5 Clear safety register (50h)

The clear safety register (CLRSF) instruction resets all the bits of the safety register.
This instruction is entered (without an address) by driving S low, and shifting the instruction code 50h into the data
input (D) pin on the rising edges of C. The instruction is completed by driving S high.
As soon as S goes high, the device resets immediately all the volatile bits of the safety register.
The S pin must be driven high after the eighth bit has been latched. If this is not done the instruction is not
executed.

Figure 11. Clear safety register

-3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11

S
C

Q High impedance

CLRSF instruction
MS54397V1

6.6 Read volatile register (85h)

The Read volatile register (RDVR) instruction is used to read the 8-bit volatile register.
The instruction is entered by driving S low and shifting the instruction code 35h into the D pin on the rising edge of
C. The volatile register bits are then shifted out (MSB first) on the Q pin, on the falling edge of C. The Volatile
register can be read continuously, as shown in Figure 12. The instruction is completed by driving S high.
The Read volatile register instruction can be used at any time, even while a Program, Erase or Write Status
register cycle is in progress.
Refer to Section 5 Status, configurable, safety, volatile, and SFDP registers for the register description.

Figure 12. Read volatile register

-3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Q High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7

RDVR instruction Volatile byte Volatile byte

MS55403V1

DS13999 - Rev 2 page 24/66

 M95P08-I M95P08-E
Write Volatile register (81h)

6.7 Write Volatile register (81h)

The Write volatile register (WRVR) instruction is used to write the Volatile register, whose writable bits include
BUFEN and BUFLD.
Only the BUFEN bit can be updated, the BUFLD bit is a status bit.
All other bit locations MSB [7:4], LSB[3;2:0] are read-only and are not affected by this instruction.
To write the Volatile register bits, a Write enable (06h) instruction must have been previously executed, or the
device does not accept the volatile register instruction (Status register bit WEL must be set to 1). Once write is
enabled, the instruction is entered by driving S low, sending the instruction code 81h, and then the volatile register
data byte. The instruction is completed by driving S high.
The S pin must be driven high after the eighth bit has been latched. If this is not done the WRVR instruction is not
executed.

Figure 13. Write Volatile register

-3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

D D7 D6 D5 D4 D3 D2 D1 D0

Q High impedance

WRVR instruction Data byte in MS55404V1

During the Volatile register write operation (06h combined with 81h), after S is driven high, the self-timed Write
register cycle starts and the WRVR time is instantaneous (see Table 26. Programming times). The content of
volatile register is described in Section 5.3 Volatile register format.

DS13999 - Rev 2 page 25/66

 M95P08-I M95P08-E
Write status and configuration registers (01h)

6.8 Write status and configuration registers (01h)

The write status register (WRSR) instruction is used to write the status and configuration register.
A WRSR instruction, used with one data byte, changes status register bits SRWD, TB, BPx, and WEL.
A WRSR instruction, used with two data bytes, can change status register bits, configuration bits (DVx), and lock
ID bit (LID), located in the configuration register.
To write the status and configuration registers, a write enable (06h) instruction must have been previously
executed from the device to accept the instruction (Status register bit WEL must be 1). Once write is enabled, the
write status register (WRSR) instruction is entered (MSB first) by driving the S low, sending the instruction code
01h, followed by one or two data byte(s) on serial data input (D), and driving the S high.
The S pin must be driven high after the eighth bit has been latched. If this is not done, the write status, and
configurable registers instruction is not executed.
The bytes of the status and configuration register are stored in different pages to avoid losing the second byte if,
after having changed the first one, a power-down occurs.
A WRSR instruction with more data bytes than defined above is discarded.
The instruction is not accepted, and is not executed, if a write cycle is in progress.
The content of the status and the configuration register is described in Section 5.1 Status register and
Section 5.2 Configuration and safety register format.

Figure 14. Write status register

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

D D7 D6 D5 D4 D3 D2 D1 D0

Q High impedance

WRSR instruction Status register data byte in

MS69261V1

Figure 15. Write status and configuration registers

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

D D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0

Q High impedance

WRSR instruction Status register data byte in Configuration register data byte in
MS69276V1

DS13999 - Rev 2 page 26/66

 M95P08-I M95P08-E
Read data single output (03h)

6.9 Read data single output (03h)

The Read data single output (READ) instruction allows one or more data bytes to be sequentially read from the
memory. The instruction is initiated by driving the S pin low and then shifting the instruction code 03h, followed by
a 24-bit address (A23-A0) into the D pin. The code and address bits are latched on the rising edge of the C pin.
After the address is received, the data byte of the addressed memory location is shifted out (MSB first) on the Q
pin, on the falling edge of C. The address is automatically incremented to the next higher address after each data
byte is shifted out, allowing a continuous stream of data. This means that the whole memory can be accessed
with a single instruction, as long as the clock continues to cycle. The address counter rolls over to 0 after the
highest address is reached. The instruction is completed by driving S high.
The Read data single output instruction sequence is shown in Figure 16.

Figure 16. Read data single output

0 1 2 3 4 5 6 7 8 9 10 29 30 31 32 33 34 35 36 37 38 39

D A23 A22 A21 A2 A1 A0

Q High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7

READ instruction 24-bit address Data Out 1 Data Out 2

MS55469V1

DS13999 - Rev 2 page 27/66

 M95P08-I M95P08-E
Fast read single output with one dummy byte (0Bh)

6.10 Fast read single output with one dummy byte (0Bh)
The fast read single output with one dummy byte (FREAD) instruction allows one or more data bytes to be
sequentially read from the memory. However, through the addition of eight dummy clocks after the 24-bit address,
it can operate at the highest possible frequency (see Table 27. AC characteristics).
The instruction is initiated by driving the S pin low and then shifting the instruction code 0Bh followed, first by a
24-bit address (A23-A0) into the D pin, then by eight additional dummy clock cycles.
The code and address bits are latched on the rising edge of the C pin. After the eight dummy clock cycles are
received, the data byte of the addressed memory location is shifted out (MSB first) on the Q pin, on the falling
edge of C. The address is automatically incremented to the next higher address after each byte of data is shifted
out, allowing a continuous stream of data. This means that the entire memory can be accessed with a single
instruction as long as the clock continues to cycle. The address counter rolls over to 0 after the highest address is
reached. The instruction is completed by driving S high.
During the dummy clock cycles the data value on the D pin is Don't care, and the Q pin is in a high-Z.

Figure 17. Fast read single output with one dummy byte

0 1 2 3 4 5 6 7 8 9 10 29 30 31

D A23 A22 A21 A2 A1 A0

Q High impedance

READ instruction 24-bit address

32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55

High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q

Dummy clock cycles Data Out 1 Data Out 2

MS69255V1

DS13999 - Rev 2 page 28/66

 M95P08-I M95P08-E
Fast read dual output with one dummy byte (3Bh)

6.11 Fast read dual output with one dummy byte (3Bh)
The Fast read dual output with one dummy byte (FDREAD) instruction is similar to the Fast read single output
with one dummy byte (0Bh) instruction, except that data is output on pins DQ1 and DQ0. This allows the data to
be transferred at the highest possible frequency of fC (see Table 27. AC characteristics).
The instruction is initiated by driving the S pin low, then shifting the instruction code 3Bh followed by a 24-bit
address (A23-A0) into the D pin, and finally adding eight dummy clock cycles, as shown in Figure 18. The code
and address bits are latched on the rising edge of the C pin. After the eight dummy clock cycles are received, the
data byte of the addressed memory location is shifted out (MSB first) on the DQ1 and DQ0 pins (every two bits
interleave on the two I/O pins), on the falling edge of C.
The address is automatically incremented to the next higher address after each data byte is shifted out, so the
whole memory can be read out with a Fast read dual instruction. The address counter rolls over to 0 after the
highest address is reached. The instruction is completed by driving the S pin high. During the dummy clock
cycles, the data value on the D pin is Don't care, and the Q pin is high-Z.

Figure 18. Fast read dual output with one dummy byte

0 1 2 3 4 5 6 7 8 9 10 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47

D-DQ0 A23 A22 A21 A2 A1 A0 Q6 Q4 Q2 Q0 Q6 Q4 Q2 Q0

Q-DQ1 High impedance Q7 Q5 Q3 Q1 Q7 Q5 Q3 Q1

FDREAD instruction 24-bit address Dummy clock cycles Data Out 1 Data Out 2
MS55470V1

DS13999 - Rev 2 page 29/66

 M95P08-I M95P08-E
Fast read quad output with one dummy byte (6Bh)

6.12 Fast read quad output with one dummy byte (6Bh)
The fast read quad output with one dummy byte (FQREAD) instruction is similar to the Fast read dual output with
one dummy byte instruction, except that data is output on four pins (DQ3, DQ2, DQ1, and DQ0). This allows data
to be transferred at the highest possible frequency fC (see Table 27. AC characteristics).
The instruction is initiated by driving the S pin low, then shifting the instruction code 6Bh, followed by a 24-bit
address (A23-A0) into the D pin, and then adding eight dummy clock cycles as shown in Figure 19. The code and
address bits are latched on the rising edge of the C pin. After the eight dummy clock cycles are received, the data
byte of the addressed memory location is shifted out (MSB first) on the DQ3, DQ2, DQ1, and DQ0 pins (every
four bits interleave on the four I/O pins) on the falling edge of C.
The address is automatically incremented to the next higher address after each data byte is shifted out, so the
whole memory can be read out with a Fast read quad instruction. The address counter rolls over to 0 after the
highest address is reached.
The instruction is completed by driving the S pin high.
During the dummy clock cycles, the data value on the D pin is Don't care, and the Q pin is high-Z.
Note: The W-DQ2 and HOLD-DQ3 pins switch in high‑impedance after the last bit of the third address byte of the
instruction.

Figure 19. Fast read quad output with one dummy byte

0 1 2 3 4 5 6 7 8 9 10 29 30 31

D-DQ0 A23 A22 A21 A2 A1 A0

Q-DQ1 High impedance

W-DQ2 High impedance

HOLD-DQ3
FQREAD instruction 24-bit address

32 33 34 35 36 37 38 39 40 41 42 43 44 45 46

C
Q4 Q0 Q4 Q0 Q4 Q0 D-DQ0
High impedance Q5 Q1 Q5 Q1 Q5 Q1 Q-DQ1
High impedance Q6 Q2 Q6 Q2 Q6 Q2 W-DQ2
High impedance Q7 Q3 Q7 Q3 Q7 Q3 HOLD-DQ3

Dummy clock cycles Data Out 1 Data Out 2 Data Out 3

MS55471V1

DS13999 - Rev 2 page 30/66

 M95P08-I M95P08-E
Erase operations

6.13 Erase operations

Chip erase, Block erase, Sector erase and Page erase operations set the selected area bits to 1.

6.13.1 Chip erase (C7h)

The chip erase (CHER) instruction sets all memory bits within the device to the erased state of 1 (FFh). A write
enable instruction must be executed before the device accepts the chip erase instruction (Status register bit WEL
must be 1). The instruction is initiated by driving the S pin low and shifting-in the instruction code C7h. The
instruction is completed by driving S high. The chip erase instruction sequence is shown in Figure 20.
The S pin must be driven high after the eighth bit has been latched. If this is not done the chip erase instruction is
not executed. After S is driven high, the self-timed chip erase instruction starts, with a time duration of tCE (see
Table 26. Programming times). While the chip erase cycle is in progress, the read status register instruction can
still be accessed to check the status of the WIP bit. The WIP bit is automatically set to 1 during the chip erase
cycle. It is reset to 0 when the device is ready to accept commands. After the chip erase cycle has finished, the
write enable latch (WEL) bit in the status register is cleared to 0. The chip erase instruction is not executed if any
addressed pages of the chip are protected by the block protection (BP2, BP1, and BP0) and TB bits. The status is
reported with PAMAF and ERF flags. See Table 9. Safety register format.

Figure 20. Chip erase

0 1 2 3 4 5 6 7

Q High impedance

CHER instruction
MS69263V1

6.13.2 Block erase (D8h)

The block erase (BKER) instruction sets all memory bits within a specified block (64 Kbytes) to the erased state of
all 1s (FFh). A write enable instruction must be executed before the device accepts the block erase instruction
(the WEL status register bit must be 1). The instruction is initiated by driving the S pin low and shifting-in the
instruction code “D8h” followed by a 24-bit block address (A23-A0). The instruction is completed by driving S high.
The block erase instruction sequence is shown in Figure 21.
The S pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the block
erase instruction is not executed. After S is driven high, the self-timed block erase instruction starts, with a time
duration of tBE1 (see Table 26. Programming times). While the block erase cycle is in progress, the read status
register instruction can still be accessed to check the status of the WIP bit. The WIP bit is at 1 during the block
erase cycle. It transits to 0 when the cycle has finished and the device is ready to accept further instructions. After
the block erase cycle is complete, the write enable latch (WEL) bit in the status register is cleared to 0. The block
erase instruction is not executed if any addressed pages of the block are protected by the block protection (BP2,
BP1, and BP0) and TB bits. The status is reported with PAMAF and ERF flags. See Table 9. Safety register
format.

DS13999 - Rev 2 page 31/66

 M95P08-I M95P08-E
Erase operations

Figure 21. Block erase

-3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31

S
C

D A23 A22 A21 A2 A1 A0

Q High impedance

BKER instruction 24-bit address

MS55407V1

6.13.3 Sector erase (20h)

The sector erase (SCER) instruction sets all memory bits within a specified sector (4 Kbytes) to the erased state
of all 1s (FFh). A write enable instruction must be executed before the device accepts this instruction (Status
register bit WEL must equal 1). The instruction is initiated by driving the S pin low and shifting-in the instruction
code 20h, followed a 24-bit sector address (A23-A0). The instruction is completed by driving S high. The sector
erase instruction sequence is shown in Figure 22.

Figure 22. Sector erase

0 1 2 3 4 5 6 7 8 9 10 11 12 29 30 31

S
C

D A23 A22 A21 A2 A1 A0

Q High impedance

SCER instruction 24-bit address

MS55408V1

The S pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the sector
erase instruction is not executed. After S is driven high, the self-timed sector erase instruction starts, for a time
duration of tSE (see Table 26. Programming times). While the sector erase cycle is in progress, the read status
register instruction can still be accessed to check the status of the WIP bit. The WIP bit is set 1 during the sector
erase cycle. It transits to 0 when the cycle is finished and the device is ready to accept further instructions. After
the sector erase cycle is complete, the write enable latch (WEL) bit in the status register is cleared to 0. The
sector erase instruction is not executed if any addressed pages of the sector are protected by the block protection
(BP2, BP1, and BP0) and TB bits. The status is reported with PAMAF and ERF flags. See Table 9. Safety register
format.

DS13999 - Rev 2 page 32/66

 M95P08-I M95P08-E
Page program operations

6.13.4 Page erase (DBh)

The page erase (PGER) instruction sets a page of 512 bytes within the device to the erased state of all 1s (FFh).
A write enable instruction must first be executed before the device accepts the Page erase instruction (Status
register bit WEL must equal 1). The instruction is initiated by driving the S pin low and shifting-in the instruction
code DBh. The instruction is completed by driving S high. The Page erase instruction sequence is shown in
Figure 23.
The S pin must be driven high after the eighth bit has been latched, or the instruction is not completed. After S is
driven high, the self-timed Page erase instruction starts, for a time duration of tPE (see Table 26. Programming
times). While the Page erase cycle is in progress, the read status register instruction can still be accessed to
check the status of the WIP bit. The WIP bit is 1 during the Page erase cycle, and becomes 0 when the cycle
finishes and the device is ready to accept further instructions. After the page erase cycle has finished, the write
enable latch (WEL) bit in the status register is cleared to 0. The Page erase instruction is not executed if the
addressed page is protected by the block protection (BP2, BP1, and BP0) and TB bits. The status is reported with
PAMAF and ERF flags (see Table 9. Safety register format).

Figure 23. Page erase

0 1 2 3 4 5 6 7 8 9 10 29 30 31 17

S
C

D A23 A22 A21 A2 A1 A0

Q High impedance

PGER instruction 24-bit address

MS55409V1

6.14 Page program operations

6.14.1 Page program (0Ah)

The page program (PGPR) instruction allows from one to 512 bytes of data, initially in the erased state (FFh), to
be programmed to 0. A write enable instruction must be executed before the device accepts this instruction
(Status register bit WEL= 1).
The page program instruction is initiated by driving S low, then shifting the instruction code 0Ah, followed by a
24‑bit address (A23-A0) and at least one data byte into the D-DQ0 pin. The S pin must be held low for the whole
length of the instruction. The instruction is completed by driving S high. The sequence is shown in Figure 24.

Figure 24. Page program

0 1 2 3 4 5 6 7 8 9 10 29 30 31 32 33 34 35 36 37 38 39 4121 4122 4123 4124 4125 4126 4127 4128
S

D A23 A22 A21 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0

PGPR instruction 24-bit address Data byte 1 Data bytes 2 to 511 Data byte 512
MS69264V1

S must be driven high after the eighth bit of the last byte has been latched, otherwise the instruction is rejected
and is not executed. After S is driven high, the self-timed page program instruction starts for a time duration of tpp
(see Table 26. Programming times). While the page program cycle is in progress, the read status register
instruction can still be accessed to check the status of the WIP bit, which is at 1 during the page program cycle. It
becomes 0 when the cycle is finished and the device is ready to accept further instructions. When the page
program cycle finishes, the write enable latch (WEL) bit in the status register is cleared to 0. The page program
instruction is not executed if the addressed page is protected by the block protection bits, and the status is
reported with PAMAF, ERF, and PRF flags. See Table 9. Safety register format.

DS13999 - Rev 2 page 33/66

 M95P08-I M95P08-E
Page program operations

Due to the ECC architecture, the page program operation can be executed only once within a data word of 16
bytes (modulo 16). The page program operation is limited to writing bytes within a single physical page (where
address A23 to A9 are the same), regardless of the number of bytes being programmed. After each data byte is
received, the address on the nine lowest-order address bits (A8 to A0) is internally incremented by one, and the
remaining bits (A23 to A9) remain constant. If more than 512 bytes are transmitted, the address counter rolls over
to the beginning of the same page and, the previously stored data is overwritten.

6.14.2 Page program with buffer load (0Ah)

Similarly to the Page program instruction, the Page program with buffer load (PGPR) instruction allows from one
to 512 bytes of data, initially in the erased state (FFh), to be programmed. It also allows the buffer of 512 data
bytes for the next page program operation to be loaded during page program execution.
The buffer mode must be activated by setting the buffer loading activation bit (BUFEN) to 1 (see
Section 5.3 Volatile register format).
A Write enable instruction must be executed before the device accepts a Page program instruction (Status
register bit WEL = 1).
The Page program with buffer load instruction is initiated by driving pin S low, then shifting-in the instruction code
0Ah, followed by a 24-bit address (A23-A0) and at least one data byte into the D-DQ0 pin. The S pin must be held
low for the whole length of the instruction. The S pin must be driven high after the eighth bit of the last byte has
been latched. After S is driven high, the self-timed Page program instruction starts for a time duration of tPP (see
Table 26. Programming times). The sequence is shown in Figure 24. Page program.
While the self-timed Page program is in progress, and if buffer is available (BUFLD equal to 0), a new page
program instruction (no WREN needed) can be sent. This new page program command is executed with the
information stored in the buffer as soon as the ongoing page program execution is complete.
• If the buffer is empty, the device waits for a new Page program instruction.
• If the buffer is not available (BUFLD equal to 1), the user must wait for the buffer free ((BUFLD equal to 0)
before sending a new page program instruction.
• The Read Volatile register instruction (RDVR) allows buffer status to be checked.
To exit from Buffer mode, the volatile configuration bit (BUFEN) in the Volatile register must be reset to 0. See
Section 6.7 Write Volatile register (81h).

Table 12. Buffer load

BUFEN WIP BUFLD Description

Buffer mode inactive.

0 x 1
BUFLD is always at 1 when BUFEN is at 0 (Buffer mode not active).
Buffer mode activated.
1 0 0
All the buffers are empty, Page program allowed.
Buffer mode activated.
1 1 0 A buffer is empty and Page program is ongoing.
New Page program authorized to load the available buffer.
Buffer mode activated.
1 1 1 All buffers are full and Page program is ongoing.
New Page program not allowed.

Caution: In Buffer mode, only a reduced set of instructions is decoded to allow programming of a selected area. When
programming is complete, the BUFEN flag must be reset to enable the device to decode the full set of
instructions. In particular, to check programmed content, the user must exit from Buffer mode to launch a READ
instruction over the programmed area.

DS13999 - Rev 2 page 34/66

 M95P08-I M95P08-E
Page write (02h)

6.15 Page write (02h)

The page write (PGWR) instruction allows from one to 512 bytes of data to be written in a single instruction (auto
erase + program) leaving the other bytes of the page unchanged. A Write enable instruction must be executed
before the device accepts this instruction (Status register bit WEL = 1).
The Page write instruction is initiated by driving the S pin low then shifting the instruction code 02h, followed by a
24-bit address (A23-A0) and at least one data byte, into the D-DQ0 pin. S must be held low for the entire length of
the instruction while data are being sent to the device. The instruction is completed by driving S high.
The whole sequence is shown in the figure below.

Figure 25. Page write

0 1 2 3 4 5 6 7 8 9 10 29 30 31 32 33 34 35 36 37 38 39

D A23 A22 A21 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0

PGWR instruction 24-bit address Data byte 1

40 41 42 43 44 45 46 47 4121 4122 4123 4124 4125 4126 4127 4128

S
C

D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D

Data byte 2 Data byte 512 MS55491V1

S must be driven high after the eighth bit of the last byte has been latched, or the Page write instruction is not
executed. After S is driven high, the self-timed Page write instruction starts for a time duration of tpw (see
Table 26. Programming times). While the Page write cycle is in progress, the Read status register instruction can
still be accessed to check the status of the WIP bit, which is at 1 during the Page program cycle, and becomes a
0 when the cycle is finished and the device is ready to accept further instructions. After the Page write cycle has
finished, the write enable latch (WEL) bit in the status register is cleared to 0.
The page write operation is limited to writing bytes within a single physical page (where address A23 to A9 are the
same). After each data byte received, the address on the nine lowest order address bits (A8 to A0) is internally
incremented by one, and the remaining bits (A23 to A9) remain constant. If more than 512 bytes are transmitted,
the address counter rolls over to the beginning of the same page and the previously stored data are overwritten.
The write page instruction is not executed if a part of the targeted area is protected by the block protection bits. In
this case the status is reported with the PAMAF, ERF, and PRF flags.

DS13999 - Rev 2 page 35/66

 M95P08-I M95P08-E
Read identification (83h)

6.16 Read identification (83h)

The read identification (RDID) instruction allows one or more data bytes in the two identification pages (512 bytes
each) to be read sequentially:
• The first page contains three device identification bytes.
• In the case of a UID, one byte for length and a unique ID value on N bytes (N specified in UID length), as
defined in Table 13.
• The second page is located at the address 200h. It is delivered erased and available for customer data.

Table 13. Identification page content

Address (in the first identification page) Content Value

00h ST manufacturer code 20h

01h SPI family code 00h
02h Memory density code 14h (8-Mbit)
03h UID length 00h
04h UID FFh

Note: The first three bytes (address 00h, 01h, and 02h) of the identification page can also be read with the read
JEDEC identification (JDID) instruction.
The read identification (RDID) instruction is initiated by driving the S pin low and shifting the instruction code 83h,
followed by a 24-bit address (A23-A0) into the D-DQ0 pin.
The data byte pointed to by the lower address bits [A9:A0] is shifted out (MSB first) on the serial data output (Q),
as shown in Figure 26. The address is automatically incremented to the next higher address of the identification
pages after each data byte is shifted out, thus enabling a continuous stream of data. This means that the entire
area of identification pages (1024 bytes) can be accessed with a single instruction as long as the clock continues
to cycle. The instruction is completed by driving S high.

Figure 26. Read identification

0 1 2 3 4 5 6 7 8 9 10 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47

D A23 A22 A21 A2 A1 A0

Q High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7

RDID instruction 24-bit address ST manufacturer code SPI Family code

48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 4121 4122 4123 4124 4125 4126 4127 4128

S

Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q

Memory density code UID length or data out 4 UID or data out 5 data out 512 MS69257V1

DS13999 - Rev 2 page 36/66

 M95P08-I M95P08-E
Fast read identification (8Bh)

6.17 Fast read identification (8Bh)

The fast read identification (FRDID) instruction allows one or more data bytes in the two identification pages to be
sequentially read. With the addition of eight dummy clocks after the 24-bit address, it can operate at the highest
possible frequency fC (see Table 27. AC characteristics).
This instruction is initiated by driving the S pin low and shifting the instruction code 8Bh, followed first by a 24-bit
address (A23-A0) into the D-DQ0 pin, then by eight additional dummy clocks. The code and address bits are
latched on the rising edge of the C pin. After the eight dummy clocks are received, the data byte of the addressed
memory location is shifted out (MSB first) on the Q pin, on the falling edge of C. The address is automatically
incremented to the next higher address after each data byte is shifted out, thus enabling a continuous stream of
data. This means that the entire identification page (1024 bytes) can be accessed with a single instruction as long
as the clock continues to cycle.
The address counter rolls over to 0 after the highest address of the second identification page is reached. The
instruction is completed by driving the S pin high. During the dummy clock cycles the data value on the D pin is
don't care, and the Q pin is in high-Z.
The fast read identification instruction sequence is shown in Figure 27.

Figure 27. Fast read identification

0 1 2 3 4 5 6 7 8 9 10 29 30 31
S
C
D A23 A22 A21 A2 A1 A0
Q High impedance

FRDID instruction 24-bit address

32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 4121 4122 4123 4124 4125 4126 4127 4128

S
C
D
High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q

Dummy Data out 1 Data out 512

MS69266V1

DS13999 - Rev 2 page 37/66

 M95P08-I M95P08-E
Write identification page (82h)

6.18 Write identification page (82h)

The write identification page (WRID) instruction is used to write the identification page.
To write the identification page, a write enable (06h) instruction must have been executed previously for the
device to accept the instruction (Status register bit WEL must equal 1). Once write is enabled, the write
identification page instruction is initiated by driving the S pin low, then shifting the instruction code 82h followed by
a 24-bit address (A23-A0) and at least one data byte, into the D pin. The S pin must be held low for the whole
length of the instruction while data is being sent to the device. The instruction is completed by driving S high. (see
Figure 28).

Figure 28. Write identification page

0 1 2 3 4 5 6 7 8 9 10 29 30 31 32 33 34 35 36 37 38 39

D A23 A22 A21 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0

WRID instruction 24-bit address Data byte 1

40 41 42 43 44 45 46 47 4121 4122 4123 4124 4125 4126 4127 4128

S
C

D D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0

Data byte 2 Data byte 512

MS69258V1

Each time a new data byte is shifted in, the least significant bits of the internal address counter are incremented. If
the address counter exceeds the page boundary (the page size is 512 bytes), the internal address pointer rolls
over to the beginning of the page where the next data bytes are written. If more than 512 bytes are received, only
the last 512 bytes are written.

6.19 JEDEC identification (9Fh)

The JEDEC identification (JDID) instruction allows the three device identification bytes to be read in loop mode.
See Table 13. Identification page content.
This instruction is initiated by driving the S pin low and then shifting the instruction code 9Fh into the D pin. The
code bits are latched on the rising edge of the C pin. After the last bit of instruction code is received, the three
identification bytes are shifted out (MSB first) on the Q pin, on the next falling clock edge. The same three bytes
are continuously shifted out as long as the clock continues to cycle. The instruction is stopped by driving the S pin
high, as shown in Figure 29.

Figure 29. JEDEC identification

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

Q High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0

JDID instruction ST manufacturer code SPI family code Memory density code
MS69279V1

DS13999 - Rev 2 page 38/66

 M95P08-I M95P08-E
Read SFDP (5Ah)

6.20 Read SFDP (5Ah)

The Read SFDP (RDSFDP) instruction is used to read the SFDP register format.
This instruction is initiated by driving the S pin low and shifting the instruction code 5Ah, followed first by a 24-bit
address (A23-A0) into the D pin, then by eight additional dummy clock cycles. The code and address bits are
latched on the rising edge of the C pin. After the eight dummy clocks are received, the data byte of the SFDP
register is shifted out (MSB first) on the Q pin, on the falling edge of C. The address is automatically incremented
to the next higher address after each data byte is shifted out, thus enabling a continuous stream of data. This
means that the whole SFDP register (512 bytes) can be accessed with a single instruction, as long as the clock
continues to cycle. The instruction is completed by driving S high. During the dummy clock cycles the data value
on the D pin is Don't care and the Q pin is high-Z.
The read SFDP sequence is shown in Figure 30.

Figure 30. Read SFDP

0 1 2 3 4 5 6 7 8 9 10 11 29 30 31

D A23 A22 A21 A2 A1 A0

Q High impedance

RDSFDP instruction 24-bit address

32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55

D
High impedance Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Q

Dummy Data out 1 Data out 2

MS69280V1

DS13999 - Rev 2 page 39/66

 M95P08-I M95P08-E
Deep power-down enter (B9h)

6.21 Deep power-down enter (B9h)

The deep power-down enter (DPD) instruction puts the device in a very low consumption state, in which a limited
number of commands are available. This instruction is initiated by driving S low and shifting the instruction code
B9h into the D pin. The S pin must be held low for the whole length of the instruction. Pin S must be driven high
after the eighth bit has been latched, otherwise the instruction is not executed. After S is driven high, the device
enters in deep power-down state after a delay of tDPD.
The deep power-down enter instruction sequence is shown in Figure 31. See Table 15. Deep power-down
conditions for the values of tDP, tDPD, and tRDDPSL.

Figure 31. Deep power-down enter

0 1 2 3 4 5 6 7 tDPDSL

S
C

Current
DPD instruction tDPD
Standby current (ICC1) Deep power-down current (ICC2)
MS54399V2

While in deep power-down state, only the deep power-down release and reset instructions, which restore the
device to normal operation, are recognized. The device is always in normal operation on power-up, with a standby
current of ICC1.
Refer to Table 15. Deep power-down conditions for tDPD and tDPDSL.

6.22 Deep power-down release (ABh)

The deep power-down release (RDPD) instruction releases the device from deep power-down state, putting it into
Standby mode state.
This instruction is initiated by driving S low and shifting the instruction code ABh into the D pin. The S pin must be
held low for the full length of the instruction. Pin S must be driven high after the eighth bit has been latched,
otherwise the instruction is not executed. After S is driven high, if the device is in Deep power-down mode, the
transition to Standby power mode is delayed by tRDPD, and S must remain high for at least tRDPSL(max), as
specified in Table 15. Deep power-down conditions). Once in standby power mode, the device waits to be
selected so that it can receive, decode, and execute instructions.
The RDPD instruction sequence is shown in Figure 32.

Figure 32. Deep power-down release

0 1 2 3 4 5 6 7 tRDPDSL

S
C

Current
RDPD instruction
Deep power-down current (ICC2) Standby current (ICC1)
MS55492V2

Refer to Table 15. Deep power-down conditions for tDPD and tRDPDSL.

DS13999 - Rev 2 page 40/66

 M95P08-I M95P08-E
Enable reset (66h) and software reset (99h)

6.23 Enable reset (66h) and software reset (99h)

The enable reset (RSTEN) and software reset (RESET) instructions reset the device.
The RSTEN instruction enables the RESET instruction.
The RSTEN instruction is initiated by driving S low and shifting the instruction code 66h into the D pin. The S pin
must be held low for the entire length of the instruction. Pin S must be driven high after the eighth bit has been
latched. Once the S pin is driven high, the RESET instruction is initiated by driving S low and shifting the
instruction code 99h into the D pin. The S pin must be held low for the entire length of the instruction. Pin S must
be driven high after the eighth bit has been latched, otherwise the instruction is not executed.
To avoid accidental resets, these two instructions must be issued in sequence. Any command other than a
software reset (99h) after an enable reset (66h) command disables the reset enable state. A new sequence of
enable reset (66h) and software reset (99h) is needed to reset the device. Once the reset command is accepted
by the device, the reset is effective after a delay given in Table 16. Reset recovery time. During this period, no
command is accepted.

Figure 33. Software reset

0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
S

Q High impedance

RSTEN instruction RESET instruction MS55473V1

RSTEN and RESET instructions are understood in deep power-down mode.

When the device is in deep Power mode or standby mode, a software reset command can be decoded and
executed. In this case, the device is reset and after tRST1 or tRST2, it enters in standby mode, ready to accept all
instructions.
When the device is executing a modify operation (including the write status register command) a software reset
command can be decoded and executed. In this case either: the ongoing operation is properly completed: the
device is reset it goes in standby mode, ready to accept all instructions or the ongoing operating does not finish
correctly. The data being processed can be damaged or lost, the device resets and it goes in standby mode,
ready to accept all instructions.

DS13999 - Rev 2 page 41/66

 M95P08-I M95P08-E
Power-up/down

7 Power-up/down

7.1 Power-up/down

Figure 34. Power-up timing

V
VCC (max)

Chip select low not allowed

Device fully accessible

VCC (min)
tVSL
Reset state
VPOR

Time

Figure 35. Power-down timing

V
VCC (max)

Chip select low not allowed

Device fully accessible

VCC (min)
tVSL

VPOR

tPWD
Time

Table 14. Power-up/down conditions

Parameter Symbol Min Max Unit

VCC(min) to S low(2) tVSL 30(1) - µs

Power-up
Power-on reset voltage(2) VPOR 1.1 1.45 V

Power-down time for reset(2) tPWD 10 - µs

Power-down
Power-on reset voltage(2) VPOR 1.1 1.45 V

1. The WIP bit can be monitored after TVSL has elapsed (WIP = 1 at power-up and before tVSL = 30 μs).
2. Evaluated by characterization - not tested in production.

DS13999 - Rev 2 page 42/66

 M95P08-I M95P08-E
Deep power-down

7.2 Deep power-down

Table 15. Deep power-down conditions

Symbol Parameter Min Max Unit

tDPDSL (1)(2)
Delay for S low (new instruction after S high from deep power-down enter instruction) 10 - μs

tDPD(3) Time delay for deep power-down mode after S high - 10 μs

tRDPDSL(1)(2) Release deep power-down delay to S low (new instruction) 30 - μs

1. Evaluated by characterization - not tested in production.

2. Refer to Figure 31. Deep power-down enter and Figure 32. Deep power-down release.
3. Specified by design - not tested in production.

7.3 Reset

Table 16. Reset recovery time

Symbol Parameter Min Max Unit

tRST1(1) Reset time when reset occurs with WIP = 0 - 30 µs

tRST2(1) Reset time when reset occurs during modify operations except chip erase - 12
ms
tRST3(1) Reset time when reset occurs in chip erase execution - 25

1. Specified by design, not tested in production.

DS13999 - Rev 2 page 43/66

 M95P08-I M95P08-E
Delivery state

8 Delivery state

The device is delivered with the following configuration:

• Memory array erased: all bits set to 1 (each byte = FFh)
• Status register: 00h (all bits are initialized to 0)
• Safety register: 00h (all bits are initialized to 0)
• Configuration register: 60h (0110 0000b)
• Volatile register: 01h (0000 0001b)
• Jedec ID delivered with three bytes set as specified in Table 13. Identification page content
• Identification pages not protected and content as described in Section 6.16 Read identification (83h)

DS13999 - Rev 2 page 44/66

 M95P08-I M95P08-E
Maximum ratings

9 Maximum ratings

Stressing the device outside the ratings listed in Table 17 may cause permanent damage to the device. These are
stress ratings only, and operation of the device at these, or any other conditions outside those indicated in the
operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

Table 17. Absolute maximum ratings

Symbol Parameter Min Max Unit

TAMB Ambient operating temperature -40 125

TSTG Storage temperature -65 150 °C

TLEAD Lead temperature during soldering See note (1)

VO Output voltage -0.50 VCC + 0.6

VI Input voltage -0.50 4.2 V

VCC Supply voltage -0.50 4.2

IOL DC output current (Q = 0) - 5

mA
IOH DC output current (Q = 1) - 5

VESD Electrostatic discharge voltage (human body model) (2) - 1000(3) V

1. Compliant with JEDEC standard J-STD-020 (for small-body, Sn-Pb or Pb free assembly), the ST ECOPACK 7191395
specification, and the European directive on Restrictions on Hazardous Substances (RoHS directive 2011/65/EU of July
2011).
2. Positive and negative pulses applied on different combinations of pin connections, according to ANSI/ESDA/JEDEC JS-001
(C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
3. Enable safe manufacturing with proven margin according to JEDEC JEP155B - Recommended ESD target level for HMB
qualification.

DS13999 - Rev 2 page 45/66

 M95P08-I M95P08-E
DC and AC parameters

10 DC and AC parameters

This section summarizes the operating conditions and the DC/AC characteristics.

Table 18. Operating conditions

Symbol Parameter Min. Max. Unit

VCC Supply voltage 1.6 3.6 V

Ambient operating temperature (industrial range) -40 85

TA °C
Ambient operating temperature (extended range) -40 105

Table 19. AC measurement conditions

Symbol Parameter Min. Max. Unit

- Input rise/fall time - 5 ns

- Input waveforms levels 0.1 VCC 0.9 VCC

- Input timing reference levels 0.3 VCC 0.7 VCC V

- Output timing reference level 0.5 VCC

Cbus Capacitive load on output pins (CL) - 30 or 100 pF

Figure 36. AC measurement levels

Input waveform and timing

Output timing reference level
reference levels
0.9 VCC
0.7 VCC

0.5 VCC

0.3 VCC
0.1 VCC MS69253V1

Table 20. Cycling performance by pages

Symbol Parameter Test conditions Min. Max. Unit

NCycle Write cycle endurance –40 °C ≤ TA ≤ 85 °C, (1) - 500000 Write cycle (2)

- Chip erase endurance VCC(min) < VCC < VCC(max) - 100(3) Cycle

1. –40 °C ≤ TA ≤ 105 °C for extended range.

2. A Write cycle is executed when either a page write, a page program, a page erase, a WRSR, or a WRID is decoded. When
using the page write or the WRID instruction, refer also to Section 4.11 ECC.
3. Evaluated by characterization - Not tested in production.

Table 21. Memory cell data retention

Parameter Test conditions Min. Unit

Data retention (1) 100

TA = 40 °C Year
Data retention after cycling (after 500 K cycles) 10

1. The data retention behavior is checked in production, while the 100-year limit is defined from characterization and
qualification results.

DS13999 - Rev 2 page 46/66

 M95P08-I M95P08-E
DC and AC parameters

Table 22. Capacitance

Symbol Parameter Test conditions (1) Min. Max. Unit

COUT Output pins (Q) capacitance VOUT = 0 V - 8

pF
CIN Input pins (D) capacitance VIN = 0 V - 6

1. Specified by design, not tested in production.

Table 23. DC characteristics (M95P08-I - industrial temperature range)

Symbol Parameter Test conditions Min. Typ. Max. Unit

S = VCC; TA = 25 °C
- 16 35
VIN = VSS or VCC; 1.6 V ≤ VCC ≤ 3.6 V
ICC1 Standby supply current µA
S = VCC; TA = 85 °C
- 35(1) 40(1)
VIN = VSS or VCC; 1.6V ≤ VCC ≤ 3.6 V

S = VCC; TA = 25 °C
- 0.6 1.0
VIN = VSS or VCC; VCC = 1.8 V
µA
S = VCC; TA = 25 °C
- 1.5 2.0
VIN = VSS or VCC; VCC = 3.6 V
ICC2 Deep power-down current
S = VCC; TA = 85 °C
- 0.6(1) 2.0(1)
VIN = VSS or VCC; VCC = 1.8 V
µA
S = VCC; TA = 85 °C
- 1.5(1) 3.0(1)
VIN = VSS or VCC; VCC = 3.6 V

Read current single - 0.8(1) 1.5(1)

Read current dual 10 MHz All outputs open - 0.8(1) 2.0(1) mA

Read current quad - 0.9(1) 2.0(1)

Read current single - 1.0 2.0
Read current dual 20 MHz All outputs open - 1.2 2.0 mA
Read current quad - 1.5 3.0
ICC3
Read current single - 1.5(1) 3.0(1)

Read current dual 50 MHz All outputs open - 1.8(1) 3.0(1) mA

Read current quad - 2.0(1) 3.0(1)

Read current single - 2.0 3.0
Read current dual 80 MHz All outputs open - 2.5 4.0 mA
Read current quad - 3.0 5.0

ICC4 (1)
Page program current - 2.0 3.0 mA

ICC5(1) Write status current - 1.5 3.0 mA

ICC6(1) Page write current S = VCC, no polling, - 1.5 3.0 mA

ICC7(1) Page erase current averaged on execution time. - 1.0 3.0 mA

ICC8(1) Sector/block erase current - 2.0 3.0 mA

ICC9(2) Chip erase current - 10 25 mA

1. Evaluated by characterization - not tested in production.

2. Specified by design, not - tested in production.

DS13999 - Rev 2 page 47/66

 M95P08-I M95P08-E
DC and AC parameters

Table 24. DC characteristics (M95P08-E - extended temperature range)

Symbol Parameter Test conditions Min. Typ. Max. Unit

S = VCC; TA = 25 °C
- 16 35
VIN = VSS or VCC; 1.6 V ≤ VCC ≤ 3.6 V
ICC1 Standby supply current µA
S = VCC; TA = 105 °C
- 45 150
VIN = VSS or VCC; 1.6V ≤ VCC ≤ 3.6V

S = VCC; TA = 25 °C
- 0.6 1.0
VIN = VSS or VCC; VCC = 1.8 V
µA
S = VCC; TA = 25 °C
- 1.5 2.0
VIN = VSS or VCC; VCC = 3.6 V
ICC2 Deep power-down current
S = VCC; TA = 105 °C
- 1.5 2.0
VIN = VSS or VCC; VCC = 1.8 V
µA
S = VCC; TA = 105 °C
- 2.5 4.0
VIN = VSS or VCC; VCC = 3.6 V

Read current single - 0.8(1) 1.5(1)

Read current dual 10 MHz All outputs open - 0.8(1) 2.0(1)

Read current quad - 0.9(1) 2.0(1)

Read current single - 1.0 2.0
Read current dual 20 MHz All outputs open - 1.2 2.0
Read current quad - 1.5 3.0
ICC3
Read current single - 1.5(1) 3.0(1)

Read current dual 50 MHz All outputs open - 1.8(1) 3.0(1)

Read current quad - 2.0(1) 3.0(1)

mA
Read current single - 2.0 3.0
Read current dual 80 MHz All outputs open - 2.5 4.0
Read current quad - 3.0 5.0

ICC4(1) Page program current - 2.0 3.0

ICC5(1) Write status current - 1.5 3.0

ICC6 (1)
Page write current S = VCC, no polling, - 1.5 3.0

ICC7(1) Page erase current averaged on execution time. - 1.0 3.0

ICC8 (1)
Sector/block erase current - 2.0 3.0

ICC9(2) Chip erase current - 10 25

1. Evaluated by characterization - not tested in production.

2. Specified by design - not tested in production.

DS13999 - Rev 2 page 48/66

 M95P08-I M95P08-E
DC and AC parameters

Table 25. DC characteristics - other parameters

Symbol Parameter Test conditions Min. Max. Unit

ILI Input leakage current - ±2

VIN = VSS or VCC µA
ILO Output leakage current - ±2

VIL Input low voltage -0.45 0.25 VCC

Q open
VIH Input high voltage 0.75 VCC VCC + 0.6

VCC = 1.8 V, IOL = 0.15 mA - 0.3

VOL Output low voltage
VCC = 2.5 V, IOL = 1.5 mA - 0.4 V

VCC = 1.8 V, IOH = 0.15 mA 0.8 VCC -

VOH Output high voltage
VCC = 2.5 V, IOH = 1.5 mA 0.8 VCC -

Vpor(1) Voltage reset - 1.1 1.45

1. Evaluated by characterization, not tested in production.

Table 26. Programming times

Symbol Parameter Min. Typ.(1)(2) Max.(2) Unit

tPP Page program cycle time (512 bytes) - 1.2 1.5

tPE Page erase cycle time (512 bytes) - 1.1 4.5(3)

tPW Page write cycle time (512 bytes) - 2 4.5(3)

tSE Sector erase cycle time - 1.3 5(3) ms

tBE Block erase cycle time - 4 8(3)

tCE Chip erase cycle time - 4 25(3)

tWSCR Write Status and Configuration registers cycle time - 4 9(3)

1. TA = 25 °C.
2. No significant degradation with aging.
3. The probability to reach the maximum value is less than 1 out of 10 millions.

Table 27. AC characteristics

Test conditions specified in Table 18 and Table 19

Symbol Parameter Min. Max. Unit

FC Clock frequency - 80 MHz

tSLCH S active setup time 5 -

tSHCH S not active setup time 3 -

tSHSL S deselect time 50 -

tCHSH S active hold time 5 - ns

tCHSL S not active hold time 5 -

tCH (1)
Clock high time 5.5 -

tCL(1) Clock low time 5.5 -

tCLCH (2)
Clock rise time 0.1 -
V / ns
tCHCL(2) Clock fall time 0.1 -

tDVCH Data in set-up time 2 - ns

DS13999 - Rev 2 page 49/66

 M95P08-I M95P08-E
DC and AC parameters

Test conditions specified in Table 18 and Table 19

Symbol Parameter Min. Max. Unit

tCHDX Data in hold time 2 -

tCLHL Clock low setup time before HOLD active 0 -

tCLHH Clock low setup time before HOLD not active 0 -

ns
tHLCH HOLD active setup time before clock high 5 -

tHHCH HOLD not active time before clock high 5 -

tSHQZ(2) Output disable time - 8

tCLQV(2)(3) Clock low to output valid Load 30 pF - 10(4)

tCLQX(2) Output hold time 1 -

tHHQV(2)(3) HOLD high to output valid Load 30 pF - 14(5)

tHHQX(2) HOLD high to output low / high-Z Load 30 pF 1 - ns

tHLQZ(2) HOLD low to output high-Z - 8

tWHSL(2) Write protect setup time 10 -

tSHWL(2) Write protect hold time 10 -

1. tCL+ tCH must never be lower than the shortest possible clock period, 1/fC(max). .
2. Evaluated by characterization - not tested in production.
3. With default buffer strength (DRV1, DRV0 = 1, 1)
4. tCLQV = 14ns with VCC ≤ 2.6V
5. tHHQV = tCLQV + 4 ns, independently from buffer strength.

Table 28. tCLQV characteristics versus buffer strength

Parameter (test conditions specified Buffer Maximum value

Symbol Unit
in Table 18 and Table 19) strength 1.6 V ≤ VCC ≤ 2.6 V 2.6 V < VCC ≤ 3.6 V

High 10 Do not use

(1) Clock low to
tCLQV Load 30 pF Medium 20 11 ns
output valid
Low 30 15

1. Evaluated by characterization - not tested in production.

DS13999 - Rev 2 page 50/66

 M95P08-I M95P08-E
DC and AC parameters

Figure 37. Serial input timing

W tWHSL tSHWL
tSHSL

tCHSL tSLCH tCH tCHSH tSHCH

C
tDVCH tCHCL tCL tCLCH

tCHDX

D MSB IN LSB IN

High impedance
Q
MS69213

Figure 38. Hold timing

S
tHLCH

tCLHL tHHCH

C
tCLHH

tHLQZ tHHQV

DT01448cV2
HOLD

Figure 39. Serial output timing

S
tCH tSHSL
C

tCLQV tCLCH tCHCL tCL tSHQZ

tCLQX

tQLQH
DT01449gV2

tQHQL

ADDR
D LSB IN

DS13999 - Rev 2 page 51/66

 M95P08-I M95P08-E
Package information

11 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

11.1 SO8N package information

This SO8N is an 8-lead, 4.9 x 6 mm, plastic small outline, 150 mils body width, package.

Figure 40. SO8N – Outline

h x 45˚

A2 A
c
b ccc
e

0.25 mm
D SEATING GAUGE PLANE
PLANE
C k
8

O7_SO8_ME_V2
E1 E
1 L
A1
L1

1. Drawing is not to scale.

DS13999 - Rev 2 page 52/66

 M95P08-I M95P08-E
SO8N package information

Table 29. SO8N – Mechanical data

millimeters inches (1)

Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.750 - - 0.0689
A1 0.100 - 0.250 0.0039 - 0.0098
A2 1.250 - - 0.0492 - -
b 0.280 - 0.480 0.0110 - 0.0189
c 0.170 - 0.230 0.0067 - 0.0091

D(2) 4.800 4.900 5.000 0.1890 0.1929 0.1969

E 5.800 6.000 6.200 0.2283 0.2362 0.2441

E1(3) 3.800 3.900 4.000 0.1496 0.1535 0.1575

e - 1.270 - - 0.0500 -
h 0.250 - 0.500 0.0098 - 0.0197
k 0° - 8° 0° - 8°
L 0.400 - 1.270 0.0157 - 0.0500
L1 - 1.040 - - 0.0409 -
ccc - - 0.100 - - 0.0039

1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed
0.15 mm per side
3. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per
side.

Note: The package top may be smaller than the package bottom. Dimensions D and E1 are determinated at the
outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interleads flash, but
including any mismatch between the top and bottom of plastic body. Measurement side for mold flash,
protusions or gate burrs is bottom side.

Figure 41. SO8N - Footprint example

0.6 (x8)
3.9
6.7

O7_SO8N_FP_V2

1.27

1. Dimensions are expressed in millimeters.

DS13999 - Rev 2 page 53/66

 M95P08-I M95P08-E
UFDFPN8 (DFN8) package information

11.2 UFDFPN8 (DFN8) package information

This UFDFPN is a 8-lead, 2 x 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat package.

Figure 42. UFDFPN8 - Outline

D A B
N
A
ccc C
A1
Pin #1 C
ID marking
E eee C
Seating plane
Side view

1 2 2x aaa C
2x aaa C

Top view

D2 Datum A
e b
1 2
L1
L3
L L3

Pin #1
ID marking E2
e/2 L1
e Terminal tip
K

ZWb_UFDFN8_ME_V2
L
Detail “A”
Even terminal
ND-1 x e
See Detail “A”
Bottom view

1. Maximum package warpage is 0.05 mm.

2. Exposed copper is not systematic and can appear partially or totally according to the cross section.
3. Drawing is not to scale.
4. The central pad (the area E2 by D2 in the above illustration) must be either connected to VSS or left floating
(not connected) in the end application.

DS13999 - Rev 2 page 54/66

 M95P08-I M95P08-E
UFDFPN8 (DFN8) package information

Table 30. UFDFPN8 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.450 0.550 0.600 0.0177 0.0217 0.0236

A1 0.000 0.020 0.050 0.0000 0.0008 0.0020

b(2) 0.200 0.250 0.300 0.0079 0.0098 0.0118

D 1.900 2.000 2.100 0.0748 0.0787 0.0827

D2 1.200 - 1.600 0.0472 - 0.0630
E 2.900 3.000 3.100 0.1142 0.1181 0.1220
E2 1.200 - 1.600 0.0472 - 0.0630
e - 0.500 - - 0.0197 -
K 0.300 - - 0.0118 - -
L 0.300 - 0.500 0.0118 - 0.0197
L1 - - 0.150 - - 0.0059
L3 0.300 - - 0.0118 - -
aaa - - 0.150 - - 0.0059
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020

eee(3) - - 0.080 - - 0.0031

1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip.
3. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from measuring.

Figure 43. UFDFPN8 - Footprint example

1.600
0.500 0.300

0.600
ZWb_UFDFN8_FP_V2

1.600

1.400

1. Dimensions are expressed in millimeters.

DS13999 - Rev 2 page 55/66

 M95P08-I M95P08-E
WLCSP8 package information

11.3 WLCSP8 package information

This WLCSP is a 8-ball, 1.363 x 1.264 mm, 0.4 mm pitch, wafer level chip scale package.

Figure 44. WLCSP8 - Outline

aaa C (2x)
ddd C
E A
bbb C
B
C H
1
ccc C A B
G
e
D
2 b G
aaa C (2x)

E1j_8M_WLCSP8_ME_V2
A1
Orientation reference I
A3 A F Orientation reference
TOP VIEW A2
BOTTOM VIEW
SIDEVIEW 8 BUMPS

`
1. Dimension is measured at the maximum bump diameter parallel to primary datum C.
2. Primary datum C and seating plane are defined by the spherical crowns of the bump.
3. Drawing is not to scale.

DS13999 - Rev 2 page 56/66

 M95P08-I M95P08-E
WLCSP8 package information

Table 31. WLCSP8 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.520 0.550 0.580 0.0205 0.0216 0.0228

A1 - 0.194 - - 0.0076 -
A2
- 0.355 - - 0.0140 -
(including A3)
A3 - 0.025 - - 0.0010 -
b - 0.268 - - 0.0105 -
D - 1.363 1.393 - 0.0537 0.0548
E - 1.264 1.294 - 0.0498 0.0509
e - 0.400 - - 0.0157 -
F - 0.206 - - 0.0081 -
G - 0.282 - - 0.0111 -
H - 0.232 - - 0.0091 -
I - 0.426 - - 0.0168 -
aaa - - 0.110 - - 0.0043
bbb - - 0.110 - - 0.0043
ccc - - 0.110 - - 0.0043
ddd - - 0.060 - - 0.0024

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 45. WLCSP8 - Footprint example

0.426

0.400
E1j_8M_WLCSP9_FP_V1

0.268

1. Dimensions are expressed in millimeters.

DS13999 - Rev 2 page 57/66

 M95P08-I M95P08-E
Ordering information

12 Ordering information

Table 32. Ordering information scheme

Example M95 P08- I X MN T /E F

Device type
M95 = SPI serial access EEPROM

Device function
P08 = 8-Mbit (1048576 x 8 bit)

Device grade
I = industrial temperature range, -40 to 85 °C
E = extended temperature range, -40 to 105 °C

Operating voltage
X = VCC = 1.6 to 3.6 V

Package(1)
MN = SO8N (150 mil width)
CS = WLCSP8
MC = DFN8 2x3

Option
Blank = tube packing
T = tape and reel packing

Process
/E = manufacturing technology code
Option
F = with back side coating
Blank = without back side coating

1. All packages are ECOPACK2 (RoHS-compliant and free of brominated, chlorinated and antimony-oxide flame retardants).

Note: For a list of available options (speed, package, etc.) or for further information on any aspect of this device,
contact your nearest STMicroelectronics sales office.
Note: Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and
therefore not approved for use in production. ST is not responsible for any consequences resulting from such
use. In no event will ST be liable for the customer using any of these engineering samples in production. ST
Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity.

DS13999 - Rev 2 page 58/66

 M95P08-I M95P08-E
Ordering information

Table 33. Ordering information scheme for unsawn wafer

Example M95 P08- I X W 22 I /E

Device type
M95 = SPI serial access EEPROM

Device function
P08 = 8-Mbit (1048576 x 8 bit)

Device grade
I = industrial temperature range, -40 to 85 °C

Operating voltage
X = VCC = 1.6 to 3.6 V

Delivery form
W = Unsawn wafer

Wafer thickness
22 = 180 µm back lapped wafer

Wafer testing
I = inkless test
Process
/E = manufacturing technology code

Note: For a list of available options (speed, package, etc.) or for further information on any aspect of this device,
contact your nearest STMicroelectronics sales office.
Note: Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and
therefore not approved for use in production. ST is not responsible for any consequences resulting from such
use. In no event will ST be liable for the customer using any of these engineering samples in production. ST
Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity.

DS13999 - Rev 2 page 59/66

 M95P08-I M95P08-E

Revision history
Table 34. Document revision history

Date Revision Changes

19‑Jun‑2023 1 Initial release.

Unsawn wafer package added.
Updated:
• Features
• Section 1 Description
06-Sep-2023 2 • Section 5.2.2 Safety register
• Section 6.16 Read identification (83h)
• Table 20. Cycling performance by pages
• Table 23. DC characteristics (M95P08-I - industrial temperature range)
• Table 24. DC characteristics (M95P08-E - extended temperature range)

DS13999 - Rev 2 page 60/66

 M95P08-I M95P08-E
Contents

Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2 Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2.1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.1 Serial data output (Q-DQ1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.2 Serial data input (D-DQ0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.3 Serial clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.4 Chip select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.5 Hold (HOLD-DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.6 Write protect (W-DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.7 VCC (VCC, supply voltage). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.8 VSS (VSS, ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 Connecting to the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3 Dual output read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.4 Quad output read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.5 Supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.6 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.7 Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.8 Active power, standby power, and deep power-down modes . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.9 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.10 Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.11 ECC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.12 Data protection and protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.12.1 Memory protection scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.12.2 Hardware data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.13 Polling during a program, write, or erase cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Status, configurable, safety, volatile, and SFDP registers . . . . . . . . . . . . . . . . . . . . . . . . . .17
5.1 Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.2 Configuration and safety register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.2.1 Configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.2.2 Safety register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

DS13999 - Rev 2 page 61/66

 M95P08-I M95P08-E
Contents

5.3 Volatile register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

5.4 SFDP register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
6.1 Write enable (06h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.2 Write disable (04h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.3 Read status register (05h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.4 Read Configuration and Safety registers (15h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5 Clear safety register (50h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.6 Read volatile register (85h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.7 Write Volatile register (81h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6.8 Write status and configuration registers (01h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6.9 Read data single output (03h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.10 Fast read single output with one dummy byte (0Bh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6.11 Fast read dual output with one dummy byte (3Bh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.12 Fast read quad output with one dummy byte (6Bh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.13 Erase operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.13.1 Chip erase (C7h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.13.2 Block erase (D8h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.13.3 Sector erase (20h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.13.4 Page erase (DBh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.14 Page program operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.14.1 Page program (0Ah) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
6.14.2 Page program with buffer load (0Ah). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.15 Page write (02h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6.16 Read identification (83h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.17 Fast read identification (8Bh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.18 Write identification page (82h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.19 JEDEC identification (9Fh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.20 Read SFDP (5Ah) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.21 Deep power-down enter (B9h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
6.22 Deep power-down release (ABh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
6.23 Enable reset (66h) and software reset (99h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
7 Power-up/down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
7.1 Power-up/down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
7.2 Deep power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
7.3 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

DS13999 - Rev 2 page 62/66

 M95P08-I M95P08-E
Contents

8 Delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

9 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
10 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46
11 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
11.1 SO8N package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
11.2 UFDFPN8 (DFN8) package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
11.3 WLCSP8 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
12 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60
List of figures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64
List of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65

DS13999 - Rev 2 page 63/66

 M95P08-I M95P08-E
List of figures

List of figures
Figure 1. 8-pin package connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Figure 2. 8-bump ultra thin WLCSP8 connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 4. Bus master and memory devices on the SPI bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 5. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6. Hold condition activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 7. Write enable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 8. Write disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 9. Read status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 10. Read Configuration and Safety registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 11. Clear safety register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 12. Read volatile register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 13. Write Volatile register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 14. Write status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 15. Write status and configuration registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 16. Read data single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 17. Fast read single output with one dummy byte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 18. Fast read dual output with one dummy byte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 19. Fast read quad output with one dummy byte. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 20. Chip erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 21. Block erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 22. Sector erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 23. Page erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 24. Page program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 25. Page write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 26. Read identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 27. Fast read identification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 28. Write identification page. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 29. JEDEC identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 30. Read SFDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 31. Deep power-down enter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 32. Deep power-down release . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 33. Software reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 34. Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 35. Power-down timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 36. AC measurement levels. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 37. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 38. Hold timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 39. Serial output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 40. SO8N – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 41. SO8N - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 42. UFDFPN8 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 43. UFDFPN8 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 44. WLCSP8 - Outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 45. WLCSP8 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

DS13999 - Rev 2 page 64/66

 M95P08-I M95P08-E
List of tables

List of tables
Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Table 2. Address range by sector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 3. Example of pages inside sector 0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 4. Protected area sizes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5. Protection modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. Status register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 7. Configuration register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 8. Output driver strength. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 9. Safety register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 10. Volatile register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 11. M95P08-I and M95P08-E instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 12. Buffer load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 13. Identification page content . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 14. Power-up/down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 15. Deep power-down conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 16. Reset recovery time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 17. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 18. Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 19. AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 20. Cycling performance by pages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 21. Memory cell data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 22. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 23. DC characteristics (M95P08-I - industrial temperature range) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 24. DC characteristics (M95P08-E - extended temperature range) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 25. DC characteristics - other parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 26. Programming times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 27. AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 28. tCLQV characteristics versus buffer strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 29. SO8N – Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 30. UFDFPN8 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 31. WLCSP8 - Mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 32. Ordering information scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 33. Ordering information scheme for unsawn wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 34. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

DS13999 - Rev 2 page 65/66

 M95P08-I M95P08-E

IMPORTANT NOTICE – READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names
are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2023 STMicroelectronics – All rights reserved

DS13999 - Rev 2 page 66/66