FM25Q08

8M-BIT SERIAL FLASH MEMORY

Datasheet

Sep. 2015

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 1
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Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 2
1. Description z Security
– Software and hardware write protection
– Lockable 4X256-Byte OTP security sectors
The FM25Q08 is a 8M-bit (1024K-byte) Serial Flash – 64-Bit Unique ID for each device (1)
memory, with advanced write protection
mechanisms. The FM25Q08 supports the standard z High Reliability
Serial Peripheral Interface (SPI), Dual/Quad I/O as
– Endurance: 100,000 program/erase cycles
well as 2-clock instruction cycle Quad Peripheral
– Data retention: 20 years
Interface (QPI). They are ideal for code shadowing to
RAM, executing code directly from Dual/Quad SPI z Green Package
(XIP) and storing voice, text and data. – 8-pin SOP (150mil)
– 8-pin SOP (208mil)
The FM25Q08 can be programmed 1 to 256 bytes – 8-pin TDFN (2×3mm)
at a time, using the Page Program instruction. It is – 8-pin TDFN (5×6mm)
designed to allow either single Sector/Block at a – All Packages are RoHS Compliant and Halogen-
time or full chip erase operation. The FM25Q08 free
can be configured to protect part of the memory as
the software protected mode. The device can Note 1.This feature is available upon special order.
sustain a minimum of 100K program/erase cycles on Please contact Shanghai Fudan Microelectronics Group
each sector or block. Co., Ltd for details.

2. Features 3. Packaging Type

SOP 8 (150mil) TDFN8 (2x3mm)
z 8Mbit of Flash memory CS# VCC CS# 1 8 VCC
1 8
– 256 uniform sectors with 4K-byte each DO(DQ1) 2 7 HOLD#(DQ3)
DO(DQ1)
WP#(DQ2)
2
3
7
6
HOLD#(DQ3)
CLK
– 16 uniform blocks with 64K-byte each or WP#(DQ2)
VSS
3
4
6
5
CLK
DI(DQ0)
VSS 4 5 DI(DQ0)

– 32 uniform blocks with 32K-byte each

– 256 bytes per programmable page SOP 8 (208mil) TDFN8 (5x6mm)
CS# VCC
z Wide Operation Range CS# VCC 1 8
1 8
DO(DQ1) 2 7 HOLD#(DQ3) DO(DQ1) 2 7 HOLD#(DQ3)
3 6 WP#(DQ2) 3 6 CLK
– 2.7V~3.6V single voltage supply WP#(DQ2)
VSS 4 5
CLK
DI(DQ0) VSS 4 5 DI(DQ0)

– Industrial temperature range

z Serial Interface
– Standard SPI: CLK, CS#, DI, DO, WP#
– Dual SPI: CLK, CS#, DQ0, DQ1, WP# 4. Pin Configurations
– Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
– QPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
PIN PIN
– Continuous READ mode support I/O FUNCTION
NO. NAME
– Program/Erase Suspend and Resume support
1 CS# I Chip Select Input
– Allow true XIP (execute in place) operation DO Data Output (Data Input Output
z High Performance 2 I/O (1)
(DQ1) 1)
– Max FAST_READ clock frequency: 104MHz WP# Write Protect Input (Data Input
3 I/O
– Dual I/O Data transfer up to 208Mbits/s (DQ2) Output 2)(2)
– Quad I/O Data transfer up to 416Mbits/s 4 VSS Ground
– Typical page program time: 1.5ms DI Data Input (Data Input Output
5 I/O (1)
– Typical sector erase time: 90ms (DQ0) 0)
6 CLK I Serial Clock Input
– Typical block erase time: 500ms
HOLD# Hold Input (Data Input Output
– Typical chip erase time: 8s 7 I/O (2)
(DQ3) 3)
z Low Power Consumption 8 VCC Power Supply
– Typical standby current: 1μA Note:
1 DQ0 and DQ1 are used for Dual SPI instructions.
2 DQ0 – DQ3 are used for Quad SPI and QPI instructions.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 3
5. Block Diagram

Figure 1 FM25Q08 Serial Flash Memory Block Diagram

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 4
6. Pin Descriptions
Serial Clock (CLK): The SPI Serial Clock Input (CLK) pin provides the timing for serial input and
output operations.

Serial Data Input, Output and I/Os (DI, DO and DQ0, DQ1, DQ2, DQ3): The FM25Q08 supports
standard SPI, Dual SPI, Quad SPI and QPI operation. Standard SPI instructions use the
unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO
(output) to read data or status from the device on the falling edge of CLK.

Dual/Quad SPI and QPI instructions use the bidirectional DQ pins to serially write instructions,
addresses or data to the device on the rising edge of CLK and read data or status from the
device on the falling edge of CLK. Quad SPI and QPI instructions require the non-volatile Quad
Enable bit (QE) in Status Register-2 to be set. When QE=1, the WP# pin becomes DQ2 and
HOLD# pin becomes DQ3.

Chip Select (CS#): The SPI Chip Select (CS#) pin enables and disables device operation.
When CS# is high, the device is deselected and the Serial Data Output (DO, or DQ0, DQ1, DQ2,
DQ3) pins are at high impedance. When deselected, the devices power consumption will be at
standby levels unless an internal erase, program or write status register cycle is in progress.
When CS# is brought low, the device will be selected, power consumption will increase to active
levels and instructions can be written to and data read from the device. After power-up, CS#
must transition from high to low before a new instruction will be accepted. The CS# input must
track the VCC supply level at power-up (see “9 Write Protection” and Figure 66). If needed a
pull-up resister on CS# can be used to accomplish this.

HOLD (HOLD#): The HOLD# pin allows the device to be paused while it is actively selected.
When HOLD# is brought low, while CS# is low, the DO pin will be at high impedance and signals
on the DI and CLK pins will be ignored (don’t care). When HOLD# is brought high, device
operation can resume. The HOLD# function can be useful when multiple devices are sharing the
same SPI signals. The HOLD# pin is active low. When the QE bit of Status Register-2 is set for
Quad I/O, the HOLD# pin function is not available since this pin is used for DQ3.

Write Protect (WP#): The Write Protect (WP#) pin can be used to prevent the Status Registers
from being written. Used in conjunction with the Status Register’s Block Protect (CMP, SEC, TB,
BP2, BP1 and BP0) bits and Status Register Protect (SRP) bits, a portion as small as a 4KB
sector or the entire memory array can be hardware protected. The WP# pin is active low.
However, when the QE bit of Status Register-2 is set for Quad I/O, the WP# pin function is not
available since this pin is used for DQ2.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 5
7. Memory Organization
The FM25Q08 array is organized into 4,096 programmable pages of 256-bytes each. Up to 256
bytes can be programmed (bits are programmed from 1 to 0) at a time. Pages can be erased in
groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block
erase) or the entire chip (chip erase). The FM25Q08 has 256 erasable sectors, 32 erasable 32-k
byte blocks and 16 erasable 64-k byte blocks respectively. The small 4KB sectors allow for
greater flexibility in applications that require data and parameter storage.

Table 1 Memory Organization

Group Block Block Sector
Address Range
(256KB) (64KB) (32KB) (4KB)
31 255 0FF000h 0FFFFFh
15 | … … …
30 240 0F0000h 0F0FFFh
29 239 0EF000h 0EFFFFh
14 | … … …
28 224 0E0000h 0E0FFFh
3
27 223 0DF000h 0DFFFFh
13 | … … …
26 208 0D0000h 0D0FFFh
25 207 0CF000h 0CFFFFh
12 | … … …
24 192 0C0000h 0C0FFFh
23 191 0BF000h 0BFFFFh
11 | … … …
22 176 0B0000h 0B0FFFh
21 175 0AF000h 0AFFFFh
10 | … … …
20 160 0A0000h 0A0FFFh
2
19 159 09F000h 09FFFFh
9 | … … …
18 144 090000h 090FFFh
17 143 08F000h 08FFFFh
8 | … … …
16 128 080000h 080FFFh
15 127 07F000h 07FFFFh
7 | … … …
14 112 070000h 070FFFh
13 111 06F000h 06FFFFh
6 | … … …
1 12 96 060000h 060FFFh
11 95 05F000h 05FFFFh
5 | … … …
10 80 050000h 050FFFh
4 9 79 04F000h 04FFFFh

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 6
 Group Block Block Sector
Address Range
(256KB) (64KB) (32KB) (4KB)
| … … …
8 64 040000h 040FFFh
7 63 03F000h 03FFFFh
3 | … … …
6 48 030000h 030FFFh
5 47 02F000h 02FFFFh
2 | … … …
4 32 020000h 020FFFh
3 31 01F000h 01FFFFh
0
1 | … … …
2 16 010000h 010FFFh
15 00F000h 00FFFFh
1 … … …
0 | 2 002000h 002FFFh
0 1 001000h 001FFFh
0 000000h 000FFFh

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 7
8. Device Operations

Figure 2 FM25Q08 Serial Flash Memory Operation Diagram

8.1. Standard SPI

The FM25Q08 is accessed through an SPI compatible bus consisting of four signals: Serial
Clock (CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Standard
SPI instructions use the DI input pin to serially write instructions, addresses or data to the device
on the rising edge of CLK. The DO output pin is used to read data or status from the device on
the falling edge of CLK.

SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between
Mode 0 and Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in
standby and data is not being transferred to the Serial Flash. For Mode 0, the CLK signal is
normally low on the falling and rising edges of CS#. For Mode 3, the CLK signal is normally high
on the falling and rising edges of CS#.

Figure 3 The difference between Mode 0 and Mode 3

8.2. Dual SPI

The FM25Q08 supports Dual SPI operation when using instructions such as “Fast Read Dual
Output (3Bh)” and “Fast Read Dual I/O (BBh)”. These instructions allow data to be transferred to
or from the device at two to three times the rate of ordinary Serial Flash devices. The Dual SPI
Read instructions are ideal for quickly downloading code to RAM upon power-up (code-
shadowing) or for executing non-speed- critical code directly from the SPI bus (XIP). When using
Dual SPI instructions, the DI and DO pins become bidirectional I/O pins: DQ0 and DQ1.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 8
8.3. Quad SPI
The FM25Q08 supports Quad SPI operation when using instructions such as “Fast Read Quad
Output (6Bh)”, “Fast Read Quad I/O (EBh)”, “Word Read Quad I/O (E7h)” and “Octal Word Read
Quad I/O (E3h)”. These instructions allow data to be transferred to or from the device four to six
times the rate of ordinary Serial Flash. The Quad Read instructions offer a significant improvement in
continuous and random access transfer rates allowing fast code-shadowing to RAM or execution
directly from the SPI bus (XIP). When using Quad SPI instructions the DI and DO pins become
bidirectional DQ0 and DQ1 and the WP # and HOLD# pins become DQ2 and DQ3 respectively. Quad
SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.

8.4. QPI
The FM25Q08 supports Quad Peripheral Interface (QPI) operations only when the device is
switched from Standard/Dual/Quad SPI mode to QPI mode using the “Enable QPI (38h)” instruction.
The typical SPI protocol requires that the byte-long instruction code being shifted into the device only
via DI pin in eight serial clocks. The QPI mode utilizes all four DQ pins to input the instruction code,
thus only two serial clocks are required. This can significantly reduce the SPI instruction overhead
and improve system performance in an XIP environment. Standard/Dual/Quad SPI mode and QPI
mode are exclusive. Only one mode can be active at any given time. “Enable QPI (38h)” and
“Disable QPI (FFh)” instructions are used to switch between these two modes. Upon power-up or
after a software reset using “Reset (99h)” instruction, the default state of the device is
Standard/Dual/Quad SPI mode. To enable QPI mode, the non-volatile Quad Enable bit (QE) in
Status Register-2 is required to be set. When using QPI instructions, the DI and DO pins become
bidirectional DQ0 and DQ1, and the WP# and HOLD# pins become DQ2 and DQ3 respectively.
See Figure 2 for the device operation modes.

8.5. Hold
For Standard SPI and Dual SPI operations, the HOLD# signal allows the FM25Q08 operation to
be paused while it is actively selected (when CS# is low). The HOLD# function may be useful in
cases where the SPI data and clock signals are shared with other devices. For example,
consider if the page buffer was only partially written when a priority interrupt requires use of the
SPI bus. In this case the HOLD# function can save the state of the instruction and the data in the
buffer so programming can resume where it left off once the bus is available again. The HOLD#
function is only available for standard SPI and Dual SPI operation, not during Quad SPI or QPI.

To initiate a HOLD# condition, the device must be selected with CS# low. A HOLD# condition
will activate on the falling edge of the HOLD# signal if the CLK signal is already low. If the CLK is
not already low the HOLD# condition will activate after the next falling edge of CLK. The HOLD#
condition will terminate on the rising edge of the HOLD# signal if the CLK signal is already low. If
the CLK is not already low the HOLD# condition will terminate after the next falling edge of CLK.
During a HOLD# condition, the Serial Data Output (DO) is high impedance, and Serial Data
Input (DI) and Serial Clock (CLK) are ignored. The Chip Select (CS#) signal should be kept
active (low) for the full duration of the HOLD# operation to avoid resetting the internal logic state
of the device.

Figure 4 Hold Condition Waveform

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 9
9. Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise
and other adverse system conditions that may compromise data integrity. To address this
concern, the FM25Q08 provides several means to protect the data from inadvertent writes.

Write Protect Features

z Device resets when VCC is below threshold
z Time delay write disable after Power-up
z Write enable/disable instructions and automatic write disable after erase or program
z Software and Hardware (WP# pin) write protection using Status Register
z Write Protection using Power-down instruction
z Lock Down write protection for Status Register until the next power-up
z One Time Program (OTP) write protection for array and Security Sectors using Status
Register.

Upon power-up or at power-down, the FM25Q08 will maintain a reset condition while VCC is
below the threshold value of VWI, (See “12.3 Power-up Timing” and Figure 66). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC
voltage exceeds VWI, all program and erase related instructions are further disabled for a time
delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip
Erase and the Write Status Register instructions. Note that the chip select pin (CS#) must track
the VCC supply level at power-up until the VCC-min level and tVSL time delay is reached. If
needed a pull-up resister on CS# can be used to accomplish this.

After power-up the device is automatically placed in a write-disabled state with the Status
Register Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before
a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction will
be accepted. After completing a program, erase or write instruction the Write Enable Latch (WEL)
is automatically cleared to a write-disabled state of 0.

Software controlled write protection is facilitated using the Write Status Register instruction and
setting the Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC, TB, BP2, BP1
and BP0) bits. These settings allow a portion as small as a 4KB sector or the entire memory
array to be configured as read only. Used in conjunction with the Write Protect (WP#) pin,
changes to the Status Register can be enabled or disabled under hardware control. See Status
Register section for further information. Additionally, the Power-down instruction offers an extra
level of write protection as all instructions are ignored except for the Release Power-down
instruction.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 10
10. Status Register
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on
the availability of the Flash memory array, if the device is write enabled or disabled, the state of
write protection, Quad SPI setting, Security Sector lock status and Erase/Program Suspend
status. The Write Status Register instruction can be used to configure the device write protection
features, Quad SPI setting and Security Sector OTP lock. Write access to the Status Register is
controlled by the state of the non-volatile Status Register Protect bits (SRP0, SRP1), the Write
Enable instruction, and during Standard/Dual SPI operations, the WP# pin.

Factory default for all Status Register bits are 0.

Figure 5 Status Register-1

S15 S14 S13 S12 S11 S10 S9 S8

SUS CMP LB3 LB2 LB1 LB0 QE SRP1

SUSPEND STATUS

COMPLEMENT PROTECT
(non-volatile)
SECURITY REGISTER LOCK BITS
(non-volatile)
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(non-volatile)

Figure 6 Status Register-2

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 11
10.1. WIP Bit
WIP is a read only bit in the status register (S0) that is set to a 1 state when the device is
executing a Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write
Status Register or Erase/Program Security Sector instruction. During this time the device will
ignore further instructions except for the Read Status Register and Erase/Program Suspend
instruction (see tW, tPP, tSE, tBE, and tCE in “12.6 AC Electrical Characteristics”). When the
program, erase or write status register (or security sector) instruction has completed, the WIP bit
will be cleared to a 0 state indicating the device is ready for further instructions.

10.2. Write Enable Latch (WEL)

Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after
executing a Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write
disabled. A write disable state occurs upon power-up or after any of the following instructions:
Write Disable, Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase,
Write Status Register, Erase Security Sector and Program Security Sector.

10.3. Block Protect Bits (BP2, BP1, BP0)

The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4,
S3, and S2) that provide Write Protection control and status. Block Protect bits can be set using
the Write Status Register Instruction (see tW in “12.6 AC Electrical Characteristics”). All, none or
a portion of the memory array can be protected from Program and Erase instructions (see Table
3 Status Register Memory Protection). The factory default setting for the Block Protection Bits is
0, none of the array protected.

10.4. Top/Bottom Block Protect (TB)

The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect
from the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 3 Status Register
Memory Protection table. The factory default setting is TB=0. The TB bit can be set with the
Write Status Register Instruction depending on the state of the SRP0, SRP1 and WEL bits.

10.5. Sector/Block Protect (SEC)

The non-volatile Sector/Block Protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0)
protect either 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom
(TB=1) of the array as shown in Table 3 Status Register Memory Protection table. The default
setting is SEC=0.

10.6. Complement Protect (CMP)

The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It
is used in conjunction with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the
array protection. Once CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and
BP0 will be reversed. For instance, when CMP=0, a top 4KB sector can be protected while the
rest of the array is not; when CMP=1, the top 4KB sector will become unprotected while the rest
of the array become read-only. Please refer to Table 3 Status Register Memory Protection table
for details. The default setting is CMP=0.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 12
10.7. Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status
register (S8 and S7). The SRP bits control the method of write protection: software protection,
hardware protection, power supply lock-down or one time programmable (OTP) protection.

Table 2 Status Register Protect bits

Status
SRP1 SRP0 WP# Description
Register
WP# pin has no control. The Status register can be
Software
0 0 X written to after a Write Enable instruction, WEL=1.
Protection
(Factory Default)
Hardware When WP# pin is low the Status Register locked and can
0 1 0
Protected not be written to.
Hardware When WP# pin is high the Status register is unlocked and
0 1 1
Unprotected can be written to after a Write Enable instruction, WEL=1.
Power Supply Status Register is protected and can not be written to
1 0 X
Lock-Down again until the next power-down, power-up cycle.(1)
One Time Status Register is permanently protected and can not be
1 1 X
Program written to.
Note:
1. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0)
state.

10.8. Erase/Program Suspend Status (SUS)

The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after
executing a Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by
Erase/Program Resume (7Ah) instruction as well as a power-down, power-up cycle.

10.9. Security Sector Lock Bits (LB3, LB2, LB1, LB0)

The Security Register Lock Bits (LB3, LB2, LB1, LB0) are non-volatile One Time Program (OTP)
bits in Status Register (S13, S12, S11, S10) that provide the write protect control and status to
the Security Registers. The default state of LB3-0 is 0, Security Registers are unlocked. LB3-0
can be set to 1 individually using the Write Status Register instruction. LB3-0are One Time
Programmable (OTP), once it’s set to 1, the corresponding 256-Byte Security Register will
become read-only permanently.

10.10. Quad Enable (QE)

The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows
Quad SPI and QPI operation. When the QE bit is set to a 0 state (factory default), the WP# pin
and HOLD# are enabled. When the QE bit is set to a 1, the Quad DQ2 and DQ3 pins are enabled,
and WP# and HOLD# functions are disabled.

QE bit is required to be set to a 1 before issuing an “Enable QPI (38h)” to switch the device from
Standard/Dual/Quad SPI to QPI, otherwise the command will be ignored. When the device is in
QPI mode, QE bit will remain to be 1. A “Write Status Register” command in QPI mode cannot
change QE bit from a “1” to a “0”.

WARNING: If the WP# or HOLD# pins are tied directly to the power supply or ground
during standard SPI or Dual SPI operation, the QE bit should never be set to a 1.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 13
10.11. Status Register Memory Protection
Table 3 Status Register Memory Protection

STATUS REGISTER FM25Q08 (8M-BIT) MEMORY PROTECTION

PROTECTED PROTECTED PROTECTED PROTECTED
CMP SEC TB BP2 BP1 BP0
BLOCK(S) ADDRESSES DENSITY PORTION
0 X X 0 0 0 NONE NONE NONE NONE
0F0000h –
0 0 0 0 0 1 15 64KB Upper 1/16
0FFFFFh
0E0000h –
0 0 0 0 1 0 14 and 15 128KB Upper 1/8
0FFFFFh
0C0000h –
0 0 0 0 1 1 12 thru 15 256KB Upper 1/4
0FFFFFh
080000h –
0 0 0 1 0 0 8 thru 15 512KB Upper 1/2
0FFFFFh
000000h –
0 0 1 0 0 1 0 64KB Lower 1/16
00FFFFh
000000h –
0 0 1 0 1 0 0 and 1 128KB Lower 1/8
01FFFFh
000000h –
0 0 1 0 1 1 0 thru 3 256KB Lower 1/4
03FFFFh
000000h –
0 0 1 1 0 0 0 thru 7 512KB Lower 1/2
07FFFFh
000000h –
0 0 X 1 0 1 0 thru 15 1MB ALL
0FFFFFh
000000h –
0 X X 1 1 X 0 thru 15 1MB ALL
0FFFFFh
0FF000h –
0 1 0 0 0 1 15 4KB U - 1/256
0FFFFFh
0FE000h –
0 1 0 0 1 0 15 8KB U - 1/128
0FFFFFh
0FC000h –
0 1 0 0 1 1 15 16KB U - 1/64
0FFFFFh
0F8000h –
0 1 0 1 0 X 15 32KB U - 1/32
0FFFFFh
000000h –
0 1 1 0 0 1 0 4KB L - 1/256
000FFFh
000000h –
0 1 1 0 1 0 0 8KB L - 1/128
001FFFh
000000h –
0 1 1 0 1 1 0 16KB L - 1/64
003FFFh
000000h –
0 1 1 1 0 X 0 32KB L - 1/32
007FFFh
000000h –
1 X X 0 0 0 0 thru 15 ALL ALL
0FFFFFh
000000h –
1 0 0 0 0 1 0 thru 14 960KB Lower 15/16
0EFFFFh
000000h –
1 0 0 0 1 0 0 and 13 896KB Lower 7/8
0DFFFFh

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 14
 STATUS REGISTER FM25Q08 (8M-BIT) MEMORY PROTECTION
PROTECTED PROTECTED PROTECTED PROTECTED
CMP SEC TB BP2 BP1 BP0
BLOCK(S) ADDRESSES DENSITY PORTION
000000h –
1 0 0 0 1 1 0 thru 11 768KB Lower 3/4
0BFFFFh
000000h –
1 0 0 1 0 0 0 thru 7 512KB Lower 1/2
07FFFFh
010000h –
1 0 1 0 0 1 1 thru 15 960KB Upper 15/16
0FFFFFh
020000h –
1 0 1 0 1 0 2 and 15 896KB Upper 7/8
0FFFFFh
040000h –
1 0 1 0 1 1 4 thru 15 768KB Upper 3/4
0FFFFFh
080000h –
1 0 1 1 0 0 8 thru 15 512KB Upper 1/2
0FFFFFh
1 0 X 1 0 1 NONE NONE NONE NONE
1 X X 1 1 X NONE NONE NONE NONE
000000h –
1 1 0 0 0 1 0 thru 15 1,020KB L - 255/256
0FEFFFh
000000h –
1 1 0 0 1 0 0 thru 15 1,016KB L - 127/128
0FDFFFh
000000h –
1 1 0 0 1 1 0 thru 15 1,008KB L - 63/64
0FBFFFh
000000h –
1 1 0 1 0 X 0 thru 15 992KB L - 31/32
0F7FFFh
001000h –
1 1 1 0 0 1 0 thru 15 1,020KB U - 255/256
0FFFFFh
002000h –
1 1 1 0 1 0 0 thru 15 1,016KB U - 127/128
0FFFFFh
004000h –
1 1 1 0 1 1 0 thru 15 1,008KB U - 63/64
0FFFFFh
008000h –
1 1 1 1 0 X 0 thru 15 992KB U - 31/32
0FFFFFh

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 15
11. Instructions
The Standard/Dual/Quad SPI instruction set of the FM25Q08 consists of 38 basic instructions
that are fully controlled through the SPI bus (see Table 5~Table 7 Instruction Set). Instructions
are initiated with the falling edge of Chip Select (CS#). The first byte of data clocked into the DI
input provides the instruction code. Data on the DI input is sampled on the rising edge of clock
with most significant bit (MSB) first.

The QPI instruction set of the FM25Q08 consists of 25 basic instructions that are fully controlled
through the SPI bus (see Table 8 Instruction Set). Instructions are initiated with the falling edge
of Chip Select (CS#). The first byte of data clocked through DQ[3:0] pins provides the instruction
code. Data on all four DQ pins are sampled on the rising edge of clock with most significant bit
(MSB) first. All QPI instructions, addresses, data and dummy bytes are using all four DQ pins to
transfer every byte of data with every two serial clocks (CLK).

Instructions vary in length from a single byte to several bytes and may be followed by address
bytes, data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are
completed with the rising edge of edge CS#. Clock relative timing diagrams for each instruction
are included in Figure 7 through Figure 70. All read instructions can be completed after any
clocked bit. However, all instructions that Write, Program or Erase must complete on a byte
boundary (CS# driven high after a full 8-bits have been clocked) otherwise the instruction will be
ignored. This feature further protects the device from inadvertent writes. Additionally, while the
memory is being programmed or erased, or when the Status Register is being written, all
instructions except for Read Status Register will be ignored until the program or erase cycle has
completed.

11.1. Manufacturer and Device Identification

Table 4 Manufacturer and Device Identification
OP Code MF7-MF0 ID15-ID0 ID7-ID0
ABh 13h
90h, 92h, 94h A1h 13h
9Fh A1h 4014h

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 16
11.2. Standard SPI Instructions Set
Table 5 Standard SPI Instructions Set (1)
INSTRUCTION
BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
NAME
CLOCK NUMBER (0-7) (8-15) (16-23) (24-31) (32-39) (40-47)
Write Enable 06h
Volatile SR Write
50h
Enable
Write Disable 04h
Read Status
05h (S7-S0)(2)
Register-1
Read Status
35h (S15-S8)(2)
Register-2
Write Status Register 01h (S7-S0) (S15-S8)
Page Program 02h A23-A16 A15-A8 A7-A0 D7-D0 D7-D0(3)
Sector Erase (4KB) 20h A23-A16 A15-A8 A7-A0
Block Erase (32KB) 52h A23-A16 A15-A8 A7-A0
Block Erase (64KB) D8h A23-A16 A15-A8 A7-A0
Chip Erase C7h/60h
Erase / Program
75h
Suspend
Erase / Program
7Ah
Resume
Power-down B9h
Read Data 03h A23-A16 A15-A8 A7-A0 (D7-D0)
Fast Read 0Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0)
Release Powerdown (2)
ABh dummy dummy dummy (ID7-ID0)
/ ID(4)
Manufacturer/Device
90h dummy dummy 00h (MF7-MF0) (ID7-ID0)
ID(4)
(ID15-
(MF7-MF0) ID8) (ID7-ID0)
JEDEC ID(4) 9Fh
Manufacturer Memory Capacity
Type
Read SFDP Register 5Ah 00h 00h A7-A0 dummy (D7-D0)
Read Unique ID(5) 4Bh dummy dummy dummy dummy (UID63-UID0)
Erase
44h A23-A16 A15-A8 A7-A0
Security Sectors(6)
Program
42h A23-A16 A15-A8 A7-A0 D7-D0 D7-D0(3)
Security Sectors(6)
Read
48h A23-A16 A15-A8 A7-A0 dummy (D7-D0)
Security Sectors(6)
Enable QPI 38h
Enable Reset 66h
Reset 99h

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 17
11.3. Dual SPI Instructions Set
Table 6 Dual SPI Instructions Set
INSTRUCTION
BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
NAME
CLOCK NUMBER (0-7) (8-15) (16-23) (24-31) (32-39) (40-47)
Fast Read Dual
3Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)(8)
Output
A7-A0, M7- (D7-
Fast Read Dual I/O BBh A23-A8(7)
M0 (7) D0, …)(8)
Manufacturer/Device
A7-A0, M7- (MF7-MF0,
ID by 92h A23-A8(7)
M0(7) ID7-ID0)
Dual I/O(4)

11.4. Quad SPI Instructions Set

Table 7 Quad SPI Instructions Set
INSTRUCTION
BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
NAME
CLOCK NUMBER (0-7) (8-15) (16-23) (24-31) (32-39) (40-47)
D7-
Quad Page Program 32h A23-A16 A15-A8 A7-A0 D7-D0, …(3)
D0, …(10)
Fast Read Quad
6Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)(10)
Output
A23-A0, (xxxx, D7- (D7-
Fast Read Quad I/O EBh
M7-M0(9) D0)(11) D0, …)(10)
Word Read Quad A23-A0, (xx, D7- (D7-
E7h
I/O(13) M7-M0(9) D0)(12) D0, …)(10)
Octal Word Read A23-A0, (D7-
E3h
Quad I/O(14) M7-M0(9) D0, …)(10)
xxxxxx,
Set Burst with Wrap 77h
W6-W4(9)
Manufacture/Device xxxx, (MF7-
A23-A0, (MF7-MF0,
ID by 94h MF0, ID7-
M7-M0(9) ID7-ID0, …)
Quad I/O(4) ID0)

11.5. QPI Instructions Set

Table 8 QPI Instructions Set (15)
INSTRUCTION
BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
NAME
CLOCK NUMBER (0,1) (2,3) (4,5) (6,7) (8,9) (10,11)
Write Enable 06h
Volatile SR Write
50h
Enable
Write Disable 04h
Read Status
05h (S7-S0)(2)
Register-1
Read Status
35h (S15-S8)(2)
Register-2
Write Status 01h (S7-S0) (S15-S8)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 18
 INSTRUCTION
BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
NAME
Register
Page Program 02h A23-A16 A15-A8 A7-A0 D7-D0(10) D7-D0(3)
Sector Erase (4KB) 20h A23-A16 A15-A8 A7-A0
Block Erase (32KB) 52h A23-A16 A15-A8 A7-A0
Block Erase (64KB) D8h A23-A16 A15-A8 A7-A0
Chip Erase C7h/60h
Erase / Program
75h
Suspend
Erase / Program
7Ah
Resume
Power-down B9h
Set Read
C0h P7-P0
Parameters
Fast Read 0Bh A23-A16 A15-A8 A7-A0 dummy(16) (D7-D0)
Burst Read with (16)
0Ch A23-A16 A15-A8 A7-A0 dummy (D7-D0)
Wrap(17)
(16)
Fast Read Quad I/O EBh A23-A16 A15-A8 A7-A0 M7-M0 (D7-D0)
Release Powerdown
ABh dummy dummy dummy (ID7-ID0)(2)
/ ID(4)
Manufacturer/Device
90h dummy dummy 00h (MF7-MF0) (ID7-ID0)
ID(4)
(ID15-ID8)
(MF7-MF0) (ID7-ID0)
JEDEC ID(4) 9Fh Memory
Manufacturer Capacity
Type
Disable QPI FFh
Enable Reset 66h
Reset 99h
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )”
indicate data output from the device on either 1, 2 or 4 DQ pins.
2. The Status Register contents and Device ID will repeat continuously until CS# terminates the
instruction.
3. At least one byte of data input is required for Page Program, Quad Page Program and
Program Security Sectors, up to 256 bytes of data input. If more than 256 bytes of data are
sent to the device, the addressing will wrap to the beginning of the page and overwrite
previously sent data.
4. See Table 4 Manufacturer and Device Identification table for device ID information.
5. This feature is available upon special order. Please contact Shanghai Fudan Microelectronics Group
Co., Ltd for details.
6. Security Sector Address:
Security Sector 1: A23-A16 = 00h; A15-A8 = 10h; A7-A0 = byte address
Security Sector 2: A23-A16 = 00h; A15-A8 = 20h; A7-A0 = byte address
Security Sector 3: A23-A16 = 00h; A15-A8 = 30h; A7-A0 = byte address
7. Dual SPI address input format:
DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
8. Dual SPI data output format:
DQ0 = (D6, D4, D2, D0)
DQ1 = (D7, D5, D3, D1)
9. Quad SPI address input format: Set Burst with Wrap input format:
DQ0 = A20, A16, A12, A8, A4, A0, M4, M0 DQ0 = x, x, x, x, x, x, W4, x
DQ1 = A21, A17, A13, A9, A5, A1, M5, M1 DQ1 = x, x, x, x, x, x, W5, x

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 19
 DQ2 = A22, A18, A14, A10, A6, A2, M6, M2 DQ2 = x, x, x, x, x, x, W6, x
DQ3 = A23, A19, A15, A11, A7, A3, M7, M3 DQ3 = x, x, x, x, x, x, x, x
10. Quad SPI data input/output format:
DQ0 = (D4, D0, …)
DQ1 = (D5, D1, …..)
DQ2 = (D6, D2, …..)
DQ3 = (D7, D3, …..)
11. Fast Read Quad I/O data output format:
DQ0 = (x, x, x, x, D4, D0, D4, D0)
DQ1 = (x, x, x, x, D5, D1, D5, D1)
DQ2 = (x, x, x, x, D6, D2, D6, D2)
DQ3 = (x, x, x, x, D7, D3, D7, D3)
12. Word Read Quad I/O data output format:
DQ0 = (x, x, D4, D0, D4, D0, D4, D0)
DQ1 = (x, x, D5, D1, D5, D1, D5, D1)
DQ2 = (x, x, D6, D2, D6, D2, D6, D2)
DQ3 = (x, x, D7, D3, D7, D3, D7, D3)
13. For Word Read Quad I/O, the lowest address bit must be 0. (A0 = 0)
14. For Octal Word Read Quad I/O, the lowest four address bits must be 0. (A3, A2, A1, A0 = 0)
15. QPI Command Address, Data input/output format:
CLK# 0 1 2 3 4 5 6 7 8 9 10 11
DQ0 C4 C0 A20 A16 A12 A8 A4 A0 D4 D0 D4 D0
DQ1 C5 C1 A21 A17 A13 A9 A5 A1 D5 D1 D5 D1
DQ2 C6 C2 A22 A18 A14 A10 A6 A2 D6 D2 D6 D2
DQ3 C7 C3 A23 A19 A15 A11 A7 A3 D7 D3 D7 D3

16. The number of dummy clocks for QPI Fast Read, QPI Fast Read Quad I/O & QPI Burst
Read with Wrap is controlled by read parameter P7 ~ P4.
17. The wrap around length for QPI Burst Read with Wrap is controlled by read parameter P3 ~
P0.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 20
11.6. Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit in the
Status Register to a 1. The WEL bit must be set prior to every Page Program, Quad Page
Program, Sector Erase, Block Erase, Chip Erase, Write Status Register and Erase/Program
Security Sectors instruction. The Write Enable (WREN) instruction is entered by driving CS# low,
shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then
driving CS# high.

Figure 7 Write Enable Instruction for SPI Mode (left) or QPI Mode (right)

11.7. Write Enable for Volatile Status Register (50h)

The non-volatile Status Register bits described in section 10.1 can also be written to as volatile
bits. This gives more flexibility to change the system configuration and memory protection
schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the
endurance of the Status Register non-volatile bits. To write the volatile values into the Status
Register bits, the Write Enable for Volatile Status Register (50h) instruction must be issued prior
to a Write Status Register (01h) instruction. Write Enable for Volatile Status Register instruction
(Figure 8) will not set the Write Enable Latch (WEL) bit, it is only valid for the Write Status
Register instruction to change the volatile Status Register bit values.

Figure 8 Write Enable for Volatile Status Register Instruction for SPI Mode (left) or QPI
Mode (right)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 21
11.8. Write Disable (WRDI) (04h)
The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit in the
Status Register to a 0. The Write Disable (WRDI) instruction is entered by driving CS# low,
shifting the instruction code “04h” into the DI pin and then driving CS# high. Note that the WEL
bit is automatically reset after Power-up and upon completion of the Write Status Register,
Erase/Program Security Sectors, Page Program, Quad Page Program, Sector Erase, Block
Erase, Chip Erase and Reset instructions.

Figure 9 Write Disable Instruction for SPI Mode (left) or QPI Mode (right)

11.9. Read Status Register-1 (RDSR1) (05h) and Read Status

Register-2 (RDSR2) (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction
is entered by driving CS# low and shifting the instruction code “05h” for Status Register-1 or
“35h” for Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are
then shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as
shown in Figure 10. The Status Register bits are shown in Figure 5 and Figure 6 and include the
WIP, WEL, BP2-BP0, TB, SEC, SRP0, SRP1, QE, LB3-0, CMP and SUS bits.

The Read Status Register instruction may be used at any time, even while a Program, Erase or
Write Status Register cycle is in progress. This allows the WIP status bit to be checked to
determine when the cycle is complete and if the device can accept another instruction. The
Status Register can be read continuously, as shown in Figure 11. The instruction is completed
by driving CS# high.

CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

CLK Mode 0

Instruction (05h/35h)

DI
(DQ0)
Status Register 1/2 out Status Register 1/2 out
D0 High Impedance
(DQ1) 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
=MSB

Figure 10 Read Status Register Instruction (SPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 22
 Figure 11 Read Status Register Instruction (QPI Mode)

11.10. Write Status Register (WRSR) (01h)

The Write Status Register (WRSR) instruction allows the Status Register to be written. Only non-
volatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7 thru 2 of Status Register-1)
and CMP, LB3, LB2, LB1, LB0 QE, SRP1 (bits 14 thru 8 of Status Register-2) can be written to.
All other Status Register bit locations are read-only and will not be affected by the Write Status
Register (WRSR) instruction. LB3-0 are non-volatile OTP bits, once it is set to 1, it can not be
cleared to 0. The Status Register bits are shown in Figure 5 and Figure 6, and described
in 10 Status Register

To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must
previously have been executed for the device to accept the Write Status Register (WRSR)
instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered
by driving CS# low, sending the instruction code “01h”, and then writing the status register data
byte as illustrated in Figure 12 and Figure 13.

To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction
must have been executed prior to the Write Status Register (WRSR) instruction (Status Register
bit WEL remains 0). However, SRP1 and LB3, LB2, LB1, LB0, can not be changed from “1” to
“0” because of the OTP protection for these bits. Upon power off or the execution of a “Reset
(99h)” instruction, the volatile Status Register bit values will be lost, and the non-volatile Status
Register bit values will be restored.

To complete the Write Status Register (WRSR) instruction, the CS# pin must be driven high after
the eighth or sixteenth bit of data that is clocked in. If this is not done the Write Status Register
(WRSR) instruction will not be executed. If CS# is driven high after the eighth clock the CMP, QE
and SRP1 bits will be cleared to 0.

During non-volatile Status Register write operation (06h combined with 01h), after CS# is driven
high, the self-timed Write Status Register cycle will commence for a time duration of tW (See
“12.6 AC Electrical Characteristics”). While the Write Status Register cycle is in progress, the
Read Status Register instruction may still be accessed to check the status of the WIP bit. The
WIP bit is a 1 during the Write Status Register cycle and a 0 when the cycle is finished and
ready to accept other instructions again. After the Write Status Register cycle has finished, the
Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 23
 During volatile Status Register write operation (50h combined with 01h), after CS# is driven high,
the Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See
“12.6 AC Electrical Characteristics”). WIP bit will remain 0 during the Status Register bit refresh
period.

The Write Status Register (WRSR) instruction can be used in both SPI mode and QPI mode.
However, the QE bit cannot be written to when the device is in the QPI mode, because QE=1 is
required for the device to enter and operate in the QPI mode.

Figure 12 Write Status Register Instruction (SPI Mode)

Figure 13 Write Status Register Instruction (QPI Mode)

11.11. Read Data (03h)

The Read Data instruction allows one or more data bytes to be sequentially read from the
memory. The instruction is initiated by driving the CS# pin low and then shifting the instruction
code “03h” followed by a 24-bit address A23-A0 into the DI pin. The code and address bits are
latched on the rising edge of the CLK pin. After the address is received, the data byte of the
addressed memory location will be shifted out on the DO pin at the falling edge of CLK with
most significant bit (MSB) first. The address is automatically incremented to the next higher
address after each byte of data is shifted out allowing for a continuous stream of data. This

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 24
 means that the entire memory can be accessed with a single instruction as long as the clock
continues. The instruction is completed by driving CS# high.

The Read Data instruction sequence is shown in Figure 14. If a Read Data instruction is issued
while an Erase, Program or Write cycle is in process (WIP =1) the instruction is ignored and will
not have any effect on the current cycle. The Read Data instruction allows clock rates from D.C.
to a maximum of fR (see “12.6 AC Electrical Characteristics”).

The Read Data (03h) instruction is only supported in Standard SPI mode.

Figure 14 Read Data Instruction (SPI Mode only)

11.12. Fast Read (0Bh)

The Fast Read instruction is similar to the Read Data instruction except that it can operate at the
highest possible frequency of FR (see “12.6 AC Electrical Characteristics”). This is accomplished
by adding eight “dummy” clocks after the 24-bit address as shown in Figure 15. The dummy
clocks allow the devices internal circuits additional time for setting up the initial address. During
the dummy clocks the data value on the DI pin is a “don’t care”.

CS#
Mode
3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31

CLK Mode
0
Instruction (0Bh) 24-Bit Address

DI
23 22 21 3 2 1 0
(DQ0)

D0 High Impedance
(DQ1)
=MSB
CS#

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55

CLK
Dummy Clocks

DI
0
(DQ0)

Data Out 1 Data Out 2

D0 High Impedance
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
(DQ1)

Figure 15 Fast Read Instruction (SPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 25
 Fast Read (0Bh) in QPI Mode

The Fast Read instruction is also supported in QPI mode. When QPI mode is enabled, the
number of dummy clocks is configured by the “Set Read Parameters (C0h)” instruction to
accommodate wide range applications with different needs for either maximum Fast Read
frequency or minimum data access latency. Depending on the Read Parameter Bits P[5:4] setting,
the number of dummy clocks can be configured as either 2, 4, 6 or 8. The default number of
dummy clocks upon power up or after a Reset instruction is 2.

Figure 16 Fast Read Instruction (QPI Mode)

11.13. Fast Read Dual Output (3Bh)

The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh)
instruction except that data is output on two pins; DQ0 and DQ1. This allows data to be
transferred from the FM25Q08 at twice the rate of standard SPI devices. The Fast Read Dual
Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for
applications that cache code-segments to RAM for execution.

Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the
highest possible frequency of FR (see “12.6 AC Electrical Characteristics”). This is accomplished
by adding eight “dummy” clocks after the 24-bit address as shown in Figure 17. The dummy
clocks allow the device's internal circuits additional time for setting up the initial address. The
input data during the dummy clocks is “don’t care”. However, the DQ0 pin should be high-
impedance prior to the falling edge of the first data out clock.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 26
 Figure 17 Fast Read Dual Output Instruction (SPI Mode only)

11.14. Fast Read Quad Output (6Bh)

The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh)
instruction except that data is output on four pins, DQ0, DQ1, DQ2, and DQ3. A Quad enable of
Status Register-2 must be executed before the device will accept the Fast Read Quad Output
Instruction (Status Register bit QE must equal 1). The Fast Read Quad Output Instruction allows
data to be transferred from the FM25Q08 at four times the rate of standard SPI devices.

The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see
“12.6 AC Electrical Characteristics”). This is accomplished by adding eight “dummy” clocks after
the 24-bit address as shown in Figure 18. The dummy clocks allow the device's internal circuits
additional time for setting up the initial address. The input data during the dummy clocks is “don’t
care”. However, the DQ pins should be high-impedance prior to the falling edge of the first data
out clock.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 27
 CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31

CLK Mode 0

Instruction (6Bh) 24-Bit Address

DQ0 23 22 21 3 2 1 0

High Impedance
DQ1

High Impedance
DQ2

High Impedance
DQ3
=MSB

CS#

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
CLK

Dummy Clocks IO0 switches from

Input to Output
DQ0 0 4 0 4 0 4 0 4 0 4

High Impedance
DQ1 5 1 5 1 5 1 5 1 5

High Impedance
DQ2 6 2 6 2 6 2 6 2 6

High Impedance
DQ3 7 3 7 3 7 3 7 3 7

Byte1 Byte2 Byte3 Byte4

Figure 18 Fast Read Quad Output Instruction (SPI Mode only)

11.15. Fast Read Dual I/O (BBh)

The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining
two I/O pins, DQ0 and DQ1. It is similar to the Fast Read Dual Output (3Bh) instruction but with
the capability to input the Address bits A23-A0 two bits per clock. This reduced instruction
overhead may allow for code execution (XIP) directly from the Dual SPI in some applications.

Fast Read Dual I/O with “Continuous Read Mode”

The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits A23-A0, as shown in Figure 19.
The upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction
through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the
(M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling
edge of the first data out clock.

If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction
(after CS# is raised and then lowered) does not require the BBh instruction code, as shown
in Figure 20. This reduces the instruction sequence by eight clocks and allows the Read address

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 28
 to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do
not equal to (1,0), the next instruction (after CS# is raised and then lowered) requires the first
byte instruction code, thus returning to normal operation. It is recommended to input FFFFh on
DQ0 for the next instruction (16 clocks), to ensure M4 = 1 and return the device to normal
operation.

CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

CLK Mode 0

Instruction (BBh) A23-16 A15-8 A7-0 M7-0

DI
22 20 18 16 14 12 10 8 6 4 2 0 6 4 2 0
(DQ0)

D0
(DQ1) 23 21 19 17 15 13 11 9 7 5 3 1 7 5 3 1
=MSB

CS#

23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
CLK
IOs switch from
Input to Output
DI
0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6
(DQ0)

D0
1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7
(DQ1)
Byte 1 Byte 2 Byte 3 Byte 4

Figure 19 Fast Read Dual I/O Instruction (Initial instruction or previous M5-4 ≠ 10, SPI
Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 29
 Figure 20 Fast Read Dual I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode
only)

11.16. Fast Read Quad I/O (EBh)

The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction
except that address and data bits are input and output through four pins DQ0, DQ1, DQ2 and DQ3
and four Dummy clocks are required in SPI mode prior to the data output. The Quad I/O
dramatically reduces instruction overhead allowing faster random access for code execution (XIP)
directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable
the Fast Read Quad I/O Instruction.

Fast Read Quad I/O with “Continuous Read Mode”

The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits A23-A0, as shown in Figure 21.
The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction
through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the
(M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling
edge of the first data out clock.

If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction
(after CS# is raised and then lowered) does not require the EBh instruction code, as shown
in Figure 22. This reduces the instruction sequence by eight clocks and allows the Read address
to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do
not equal to (1,0), the next instruction (after CS# is raised and then lowered) requires the first
byte instruction code, thus returning to normal operation. It is recommended to input FFh on DQ0
for the next instruction (8 clocks), to ensure M4 = 1 and return the device to normal operation.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 30
 Figure 21 Fast Read Quad I/O Instruction (Initial instruction or previous M5-4≠10, SPI
Mode)

Figure 22 Fast Read Quad I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode)

Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page
by issuing a “Set Burst with Wrap” (77h) command prior to EBh. The “Set Burst with Wrap” (77h)
command can either enable or disable the “Wrap Around” feature for the following EBh
commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 8,
16, 32 or 64-byte section of a 256-byte page. The output data starts at the initial address
specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section,
the output will wrap around to the beginning boundary automatically until CS# is pulled high to
terminate the command.

The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address
and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing
multiple read commands.

The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used
to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the
wrap around section within a page. See “11.19 Set Burst with Wrap (77h)” for detail descriptions.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 31
 Fast Read Quad I/O (EBh) in QPI Mode
The Fast Read Quad I/O instruction is also supported in QPI mode, as shown in Figure 23. When
QPI mode is enabled, the number of dummy clocks is configured by the “Set Read Parameters
(C0h)” instruction to accommodate a wide range application with different needs for either
maximum Fast Read frequency or minimum data access latency. Depending on the Read
Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 2, 4, 6 or
8. The default number of dummy clocks upon power up or after a Reset instruction is 2. In QPI
mode, the “Continuous Read Mode” bits M7-0 are also considered as dummy clocks. In the
default setting, the data output will follow the Continuous Read Mode bits immediately.

“Continuous Read Mode” feature is also available in QPI mode for Fast Read Quad I/O
instruction. Please refer to the description on previous pages.

“Wrap Around” feature is not available in QPI mode for Fast Read Quad I/O instruction. To
perform a read operation with fixed data length wrap around in QPI mode, a dedicated “Burst
Read with Wrap” (0Ch) instruction must be used. Please refer to “11.40 Burst Read with Wrap
(0Ch)” for details.

Figure 23 Fast Read Quad I/O Instruction (Initial instruction or previous M5-4≠10, QPI
Mode)

11.17. Word Read Quad I/O (E7h)

The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction
except that the lowest Address bit (A0) must equal 0 and only two Dummy clock are required
prior to the data output. The Quad I/O dramatically reduces instruction overhead allowing faster
random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of
Status Register-2 must be set to enable the Word Read Quad I/O Instruction.

Word Read Quad I/O with “Continuous Read Mode”

The Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits A23-A0, as shown in Figure 24.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 32
 The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction
through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the
(M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling
edge of the first data out clock.

If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction
(after CS# is raised and then lowered) does not require the E7h instruction code, as shown
in Figure 25. This reduces the instruction sequence by eight clocks and allows the Read address
to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do
not equal to (1,0), the next instruction (after CS# is raised and then lowered) requires the first
byte instruction code, thus returning to normal operation. It is recommended to input FFh on DQ0
for the next instruction (8 clocks), to ensure M4 = 1 and return the device to normal operation.

CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

CLK Mode 0

Instruction (E7h) A23-16 A15-8 A7-0 M7-0 Dummy IOs switch from
Input to Output

DQ0 20 16 12 8 4 0 4 0 4 0 4 0 4

DQ1 21 17 13 9 5 1 5 1 5 1 5 1 5

DQ2 22 18 14 10 6 2 6 2 6 2 6 2 6

DQ3 23 19 15 11 7 3 7 3 7 3 7 3 7

Byte1 Byte2 Byte3

Figure 24 Word Read Quad I/O Instruction (Initial instruction or previous M5-4 ≠ 10, SPI
Mode only)

Figure 25 Word Read Quad I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode
only)

Word Read Quad I/O with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Word Read Quad I/O instruction can also be used to access a specific portion within a page
by issuing a “Set Burst with Wrap” (77h) command prior to E7h. The “Set Burst with Wrap” (77h)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 33
 command can either enable or disable the “Wrap Around” feature for the following E7h
commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 8,
16, 32 or 64-byte section of a 256-byte page. The output data starts at the initial address
specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section,
the output will wrap around to the beginning boundary automatically until CS# is pulled high to
terminate the command.

The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address
and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing
multiple read commands.

The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used
to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the
wrap around section within a page. See “11.19 Set Burst with Wrap (77h)” for detail descriptions.

11.18. Octal Word Read Quad I/O (E3h)

The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh)
instruction except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the
dummy clocks are not required, which further reduces the instruction overhead allowing even
faster random access for code execution (XIP). The Quad Enable bit (QE) of Status Register-2
must be set to enable the Octal Word Read Quad I/O Instruction.

Octal Word Read Quad I/O with “Continuous Read Mode”

The Octal Word Read Quad I/O instruction can further reduce instruction overhead through
setting the “Continuous Read Mode” bits M7-M0 after the input Address bits A23-A0, as shown
in Figure 26. The upper nibble of the (M7-4) controls the length of the next Octal Word Read
Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower
nibble bits of the (M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance
prior to the falling edge of the first data out clock.

If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction
(after CS# is raised and then lowered) does not require the E3h instruction code, as shown
in Figure 27. This reduces the instruction sequence by eight clocks and allows the Read address
to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do
not equal to (1, 0), the next instruction (after CS# is raised and then lowered) requires the first
byte instruction code, thus returning to normal operation. It is recommended to input FFh on DQ0
for the next instruction (8 clocks), to ensure M4 = 1 and return the device to normal operation.

Figure 26 Octal Word Read Quad I/O Instruction (Initial instruction or previous M5-4 ≠ 10,
SPI Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 34
 CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13

CLK Mode 0
IOs switch from
A23-16 A15-8 A7-0 M7-0
Input to Output

DQ0 20 16 12 8 4 0 4 0 4 0 4 0 4 0 4

DQ1 21 17 13 9 5 1 5 1 5 1 5 1 5 1 5

DQ2 22 18 14 10 6 2 6 2 6 2 6 2 6 2 6

DQ3 23 19 15 11 7 3 7 3 7 3 7 3 7 3 7

Byte1 Byte2 Byte3 Byte4

Figure 27 Octal Word Read Quad I/O Instruction (Previous instruction set M5-4 = 10, SPI
Mode only)

11.19. Set Burst with Wrap (77h)

In Standard SPI mode, the Set Burst with Wrap (77h) instruction is used in conjunction with “Fast
Read Quad I/O” and “Word Read Quad I/O” instructions to access a fixed length of 8/16/32/64-
byte section within a 256-byte page. Certain applications can benefit from this feature and
improve the overall system code execution performance.

Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the
CS# pin low and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap
Bits”, W7-0. The instruction sequence is shown in Figure 28. Wrap bit W7 and the lower nibble
W3-0 are not used.

W4 = 0 W4 =1 (default)
W6, W5
Wrap Around Wrap Length Wrap Around Wrap Length
00 Yes 8-byte No N/A
01 Yes 16-byte No N/A
10 Yes 32-byte No N/A
11 Yes 64-byte No N/A

Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and
“Word Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte
section within any page. To exit the “Wrap Around” function and return to normal read operation,
another Set Burst with Wrap instruction should be issued to set W4 = 1. The default value of W4
upon power on is 1. In the case of a system Reset while W4 = 0, it is recommended that the
controller issues a Set Burst with Wrap instruction to reset W4 = 1 prior to any normal Read
instructions since FM25Q08 does not have a hardware Reset Pin.

In QPI mode, the “Burst Read with Wrap (0Ch)” instruction should be used to perform the Read
operation with “Wrap Around” feature. The Wrap Length set by W5-4 in Standard SPI mode is still

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 35
 valid in QPI mode and can also be re-configured by “Set Read Parameters (C0h)” instruction.
Refer to “11.39 Set Read Parameters (C0h)” and “11.40 Burst Read with Wrap (0Ch)” for details.

Figure 28 Set Burst with Wrap Instruction (SPI Mode only)

11.20. Page Program (02h)

The Page Program instruction allows from one byte to 256 bytes (a page) of data to be
programmed at previously erased (FFh) memory locations. A Write Enable instruction must be
executed before the device will accept the Page Program Instruction (Status Register bit WEL= 1).
The instruction is initiated by driving the CS# pin low then shifting the instruction code “02h”
followed by a 24-bit address A23-A0 and at least one data byte, into the DI pin. The CS# pin must
be held low for the entire length of the instruction while data is being sent to the device. The Page
Program instruction sequence is shown in Figure 29 and Figure 30.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant
address bits) should be set to 0. If the last address byte is not zero, and the number of clocks
exceeds the remaining page length, the addressing will wrap to the beginning of the page. In
some cases, less than 256 bytes (a partial page) can be programmed without having any effect
on other bytes within the same page. One condition to perform a partial page program is that the
number of clocks can not exceed the remaining page length. If more than 256 bytes are sent to
the device the addressing will wrap to the beginning of the page and overwrite previously sent
data.
As with the write and erase instructions, the CS# pin must be driven high after the eighth bit of the
last byte has been latched. If this is not done the Page Program instruction will not be executed.
After CS# is driven high, the self-timed Page Program instruction will commence for a time
duration of tPP (See “12.6 AC Electrical Characteristics”). While the Page Program cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of
the WIP bit. The WIP bit is a 1 during the Page Program cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Page Program cycle
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Page
Program instruction will not be executed if the addressed page is protected by the Block Protect
(CMP, SEC, TB, BP2, BP1, and BP0) bits.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 36
 Figure 29 Page Program Instruction (SPI Mode)

Figure 30 Page Program Instruction (QPI Mode)

11.21. Quad Input Page Program (32h)

The Quad Page Program instruction allows up to 256 bytes of data to be programmed at
previously erased (FFh) memory locations using four pins: DQ0, DQ1, DQ2, and DQ3. The Quad
Page Program can improve performance for PROM Programmer and applications that have slow
clock speeds <5MHz. Systems with faster clock speed will not realize much benefit for the Quad
Page Program instruction since the inherent page program time is much greater than the time it
take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write
Enable instruction must be executed before the device will accept the Quad Page Program
instruction (Status Register-1, WEL=1). The instruction is initiated by driving the CS# pin low then
shifting the instruction code “32h” followed by a 24-bit address A23-A0 and at least one data byte,
into the DQ pins. The CS# pin must be held low for the entire length of the instruction while data
is being sent to the device. All other functions of Quad Page Program are identical to standard
Page Program. The Quad Page Program instruction sequence is shown in Figure 31.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 37
 536

537

538

539

540

541

542

Figure 31 Quad Input Page Program Instruction (SPI Mode only) 543

11.22. Sector Erase (20h)

The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased
state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept
the Sector Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by
driving the CS# pin low and shifting the instruction code “20h” followed a 24-bit sector address
A23-A0 (see Figure 1). The Sector Erase instruction sequence is shown in Figure 32 & Figure 33.

The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After CS# is driven high, the self-timed
Sector Erase instruction will commence for a time duration of tSE (See “12.6 AC Electrical
Characteristics”). While the Sector Erase cycle is in progress, the Read Status Register
instruction may still be accessed for checking the status of the WIP bit. The WIP bit is a 1 during
the Sector Erase cycle and becomes a 0 when the cycle is finished and the device is ready to
accept other instructions again. After the Sector Erase cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Sector Erase instruction will not be executed
if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits
(see Table 3 Status Register Memory Protection table).

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 38
 Figure 32 Sector Erase Instruction (SPI Mode)

Figure 33 Sector Erase Instruction (QPI Mode)

11.23. 32KB Block Erase (BE32) (52h)

The 32KB Block Erase instruction sets all memory within a specified block (32K-bytes) to the
erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will
accept the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is
initiated by driving the CS# pin low and shifting the instruction code “52h” followed a 24-bit block
address A23-A0. The Block Erase instruction sequence is shown in Figure 34 & Figure 35.

The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Block Erase instruction will not be executed. After CS# is driven high, the self-timed
Block Erase instruction will commence for a time duration of tBE1 (See “12.6 AC Electrical
Characteristics). While the Block Erase cycle is in progress, the Read Status Register instruction
may still be accessed for checking the status of the WIP bit. The WIP bit is a 1 during the Block

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 39
 Erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other
instructions again. After the Block Erase cycle has finished the Write Enable Latch (WEL) bit in
the Status Register is cleared to 0. The Block Erase instruction will not be executed if the
addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits
(see Table 3 Status Register Memory Protection table).

Figure 34 32KB Block Erase Instruction (SPI Mode)

Figure 35 32KB Block Erase Instruction (QPI Mode)

11.24. 64KB Block Erase (BE) (D8h)

The 64KB Block Erase instruction sets all memory within a specified block (64K-bytes) to the
erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will
accept the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is
initiated by driving the CS# pin low and shifting the instruction code “D8h” followed a 24-bit block
address A23-A0. The Block Erase instruction sequence is shown in Figure 36 & Figure 37.

The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Block Erase instruction will not be executed. After CS# is driven high, the self-timed

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 40
 Block Erase instruction will commence for a time duration of tBE (See 12.6 AC Electrical
Characteristics”). While the Block Erase cycle is in progress, the Read Status Register instruction
may still be accessed for checking the status of the WIP bit. The WIP bit is a 1 during the Block
Erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other
instructions again. After the Block Erase cycle has finished the Write Enable Latch (WEL) bit in
the Status Register is cleared to 0. The Block Erase instruction will not be executed if the
addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits
(see Table 3 Status Register Memory Protection table).

Figure 36 64KB Block Erase Instruction (SPI Mode)

CS#

Mode 3 0 1 2 3 4 5 6 7 Mode 3
CLK Mode 0 Mode 0
Instruction
A23-16 A15-8 A7-0
D8h
DQ0 20 16 12 8 4 0

DQ1 21 17 13 9 5 1

DQ2 22 18 14 10 6 2

DQ3 23 19 15 11 7 3

Figure 37 64KB Block Erase Instruction (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 41
11.25. Chip Erase (CE) (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the CS#
pin low and shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is
shown in Figure 38.

The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After CS# is driven high, the self-timed Chip Erase
instruction will commence for a time duration of tCE (See “12.6 AC Electrical Characteristics”).
While the Chip Erase cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the WIP bit. The WIP bit is a 1 during the Chip Erase cycle and
becomes a 0 when finished and the device is ready to accept other instructions again. After the
Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared
to 0. The Chip Erase instruction will not be executed if any page is protected by the Block Protect
(CMP, SEC, TB, BP2, BP1, and BP0) bits.

Figure 38 Chip Erase Instruction for SPI Mode (left) or QPI Mode (right)

11.26. Erase / Program Suspend (75h)

The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block
Erase operation or a Page Program operation and then read from or program/erase data to, any
other sectors or blocks. The Erase/Program Suspend instruction sequence is shown in Figure 39
& Figure 40.

For erase suspend, read and program data in the Group including suspended sector or block are
not allowed. See Table 1 for address range of Group organization.

The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h)
are not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block
erase operation. If written during the Chip Erase operation, the Erase Suspend instruction is
ignored. The Write Status Register instruction (01h) and Program instructions (02h, 32h, 42h) are
not allowed during Program Suspend. Program Suspend is valid only during the Page Program or
Quad Page Program operation.

The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit
in the Status Register equals to 0 and the WIP bit equals to 1 while a Sector or Block Erase or a
Page Program operation is on-going. If the SUS bit equals to 1 or the WIP bit equals to 0, the
Suspend instruction will be ignored by the device. A maximum of time of “tSUS” (See”12.6 AC

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 42
 Electrical Characteristics”) is required to suspend the erase or program operation. The WIP bit in
the Status Register will be cleared from 1 to 0 within “tSUS” and the SUS bit in the Status Register
will be set from 0 to 1 immediately after Erase/Program Suspend. For a previously resumed
Erase/Program operation, it is also required that the Suspend instruction “75h” is not issued
earlier than a minimum of time of “tSUS” following the preceding Resume instruction “7Ah”.

Unexpected power off during the Erase/Program suspend state will reset the device and release
the suspend state. SUS bit in the Status Register will also reset to 0. The data within the page,
sector or block that was being suspended may become corrupted. It is recommended for the user
to implement system design techniques against the accidental power interruption and preserve
data integrity during erase/program suspend state.

Figure 39 Erase/Program Suspend Instruction (SPI Mode)

CS#
tSUS
Mode 3 0 1 Mode 3
CLK Mode 0 Mode 0
Instruction
75h
DQ0

DQ1

DQ2

DQ3

Accept instructions

Figure 40 Erase/Program Suspend Instruction (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 43
11.27. Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block
Erase operation or the Page Program operation after an Erase/Program Suspend. The Resume
instruction “7Ah” will be accepted by the device only if the SUS bit in the Status Register equals
to 1 and the WIP bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately,
the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase
operation or the page will complete the program operation. If the SUS bit equals to 0 or the WIP
bit equals to 1, the Resume instruction “7Ah” will be ignored by the device. The Erase/Program
Resume instruction sequence is shown in Figure 41 & Figure 42.

Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted
by unexpected power off. It is also required that a subsequent Erase/Program Suspend
instruction not to be issued within a minimum of time of “tSUS” following a previous Resume
instruction.

Figure 41 Erase/Program Resume Instruction (SPI Mode)

Figure 42 Erase/Program Resume Instruction (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 44
11.28. Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be
further reduced with the Power-down instruction. The lower power consumption makes the
Power-down instruction especially useful for battery powered applications (See ICC1 and ICC2 in
“12.4 DC Electrical Characteristics”). The instruction is initiated by driving the CS# pin low and
shifting the instruction code “B9h” as shown in Figure 43 & Figure 44.

The CS# pin must be driven high after the eighth bit has been latched. If this is not done the
Power-down instruction will not be executed. After CS# is driven high, the power-down state will
enter within the time duration of tDP (See “12.6 AC Electrical Characteristics”). While in the power-
down state only the Release from Power- down / Device ID instruction, which restores the device
to normal operation, will be recognized. All other instructions are ignored. This includes the Read
Status Register instruction, which is always available during normal operation. Ignoring all but
one instruction makes the Power Down state a useful condition for securing maximum write
protection. The device always powers-up in the normal operation with the standby current of ICC1.

Figure 43 Deep Power-down Instruction (SPI Mode)

CS#
tDP
Mode 3 0 1 Mode 3
CLK Mode 0 Mode 0
Instruction
B9h
DQ0

DQ1

DQ2

DQ3

Stand-by current Power-down current

Figure 44 Deep Power-down Instruction (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 45
11.29. Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be
used to release the device from the power-down state, or obtain the devices electronic
identification (ID) number.

To release the device from the power-down state, the instruction is issued by driving the CS# pin
low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 45 & Figure 46.
Release from power-down will take the time duration of tRES1 (See “12.6 AC Electrical
Characteristics”) before the device will resume normal operation and other instructions are
accepted. The CS# pin must remain high during the tRES1 time duration.

When used only to obtain the Device ID while not in the power-down state, the instruction is
initiated by driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy
bytes. The Device ID bits are then shifted out on the falling edge of CLK with most significant bit
(MSB) first as shown in Figure 45 & Figure 46. The Device ID value for the FM25Q08 is listed
in Table 4 Manufacturer and Device Identification table. The Device ID can be read continuously.
The instruction is completed by driving CS# high.

When used to release the device from the power-down state and obtain the Device ID, the
instruction is the same as previously described, and shown in Figure 47 & Figure 48, except that
after CS# is driven high it must remain high for a time duration of tRES2 (See “12.6 AC Electrical
Characteristics”). After this time duration the device will resume normal operation and other
instructions will be accepted. If the Release from Power-down / Device ID instruction is issued
while an Erase, Program or Write cycle is in process (when WIP equals 1) the instruction is
ignored and will not have any effect on the current cycle.

Figure 45 Release Power-down Instruction (SPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 46
 Figure 46 Release Power-down Instruction (QPI Mode)

Figure 47 Release Power-down / Device ID Instruction (SPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 47
 Figure 48 Release Power-down / Device ID Instruction (QPI Mode)

11.30. Read Manufacturer / Device ID (90h)

The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific
device ID.

The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down /
Device ID instruction. The instruction is initiated by driving the CS# pin low and shifting the
instruction code “90h” followed by a 24-bit address A23-A0 of 000000h. After which, the
Manufacturer ID for Shanghai Fudan Microelectronics Group Co., Ltd (A1h) and the Device ID
are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure
49 & Figure 50. The Device ID value for the FM25Q08 is listed in Table 4 Manufacturer and
Device Identification table. If the 24-bit address is initially set to 000001h the Device ID will be
read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be
read continuously, alternating from one to the other. The instruction is completed by driving CS#
high.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 48
 CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
CLK Mode 0

Instruction (90h) Address (000000h)

DI
23 22 21 3 2 1 0
(DQ0)

DI High Impedance
(DQ1)
=MSB

CS#

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Mode 3
CLK Mode 0

DI 0
(DQ0)

D0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
(DQ1)
Manufacturer ID Device ID

Figure 49 Read Manufacturer / Device ID Instruction (SPI Mode)

Figure 50 Read Manufacturer / Device ID Instruction (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 49
11.31. Read Manufacturer / Device ID Dual I/O (92h)
The Read Manufacturer / Device ID Dual I/O instruction is an alternative to the Read
Manufacturer / Device ID instruction that provides both the JEDEC assigned manufacturer ID and
the specific device ID at 2x speed.

The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O
instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code
“92h” followed by a 24-bit address A23-A0 of 000000h, 8-bit Continuous Read Mode Bits, with the
capability to input the Address bits two bits per clock. After which, the Manufacturer ID for
Shanghai Fudan Microelectronics Group Co., Ltd (A1h) and the Device ID are shifted out 2 bits
per clock on the falling edge of CLK with most significant bits (MSB) first as shown in Figure 51.
The Device ID value for the FM25Q08 is listed in Table 4 Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then
followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously,
alternating from one to the other. The instruction is completed by driving CS# high.

Figure 51 Read Manufacturer / Device ID Dual I/O Instruction (SPI Mode only)
Note:
The “Continuous Read Mode” bits M7-M0 must be set to Fxh to be compatible with Fast Read
Dual I/O instruction.

11.32. Read Manufacturer / Device ID Quad I/O (94h)

The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read
Manufacturer / Device ID instruction that provides both the JEDEC assigned manufacturer ID and
the specific device ID at 4x speed.

The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O
instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code
“94h” followed by a 24-bit address A23-A0 of 000000h, 8-bit Continuous Read Mode Bits and
then four clock dummy cycles, with the capability to input the Address bits four bits per clock.
After which, the Manufacturer ID for Shanghai Fudan Microelectronics Group Co., Ltd (A1h) and
the Device ID are shifted out four bits per clock on the falling edge of CLK with most significant bit

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 50
 (MSB) first as shown in Figure 52. The Device ID value for the FM25Q08 is listed in Manufacturer
and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID will
be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be
read continuously, alternating from one to the other. The instruction is completed by driving CS#
high.

Figure 52 Read Manufacturer / Device ID Quad I/O Instruction (SPI Mode only)
Note:
The “Continuous Read Mode” bits M7-M0 must be set to Fxh to be compatible with Fast Read
Quad I/O instruction.

11.33. Read Unique ID Number (4Bh)

The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is
unique to each FM25Q08 device. The ID number can be used in conjunction with user software
methods to help prevent copying or cloning of a system. The Read Unique ID instruction is
initiated by driving the CS# pin low and shifting the instruction code “4Bh” followed by a four bytes
of dummy clocks. After which, the 64- bit ID is shifted out on the falling edge of CLK as shown
in Figure 53.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 51
 CS#

Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK Mode 0

Instruction (4Bh) Dummy Byte 1 Dummy Byte 2

DI
(DQ0)

D0 High Impedance
(DQ1)

CS#

100

101

102
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Mode 3
CLK Mode 0

Dummy Byte 3 Dummy Byte 4

DI
(DQ0)

High Impedance
D0 63 62 61 2 1 0
(DQ1)
=MSB
64-bit Unique Serial Number

Figure 53 Read Unique ID Number Instruction (SPI Mode only)

11.34. Read JEDEC ID (9Fh)

For compatibility reasons, the FM25Q08 provides several instructions to electronically determine
the identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard
for SPI compatible serial memories. The instruction is initiated by driving the CS# pin low and
shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Shanghai
Fudan Microelectronics Group Co., Ltd (A1h) and two Device ID bytes, Memory Type (ID15-ID8)
and Capacity ID7-ID0 are then shifted out on the falling edge of CLK with most significant bit
(MSB) first as shown in Figure 54 & Figure 55. For memory type and capacity values refer
to Table 4 Manufacturer and Device Identification table.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 52
 Figure 54 Read JEDEC ID Instruction (SPI Mode)

CS#

Mode 3 0 1 2 3 4 5 6 Mode 3
CLK Mode 0 Mode 0
Instruction IOs switch from
9Fh Input to Output
DQ0 12 8 4 0

DQ1 13 9 5 1

DQ2 14 10 6 2

DQ3 15 11 7 3

MFR ID ID 15-8 ID 7-0

Figure 55 Read JEDEC ID Instruction (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 53
11.35. Read SFDP Register (5Ah)
The FM25Q08 features a 256-Byte Serial Flash Discoverable Parameter (SFDP) register that
contains information about device configurations, available instructions and other features. The
SFDP parameters are stored in one or more Parameter Identification (PID) tables. Currently only
one PID table is specified, but more may be added in the future. The Read SFDP Register
instruction is compatible with the SFDP standard initially established in 2010 for PC and other
applications, as well as the JEDEC standard 1.0 that is published in 2011.

The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction
code “5Ah” followed by a 24-bit address (A23-A0)(1) into the DI pin. Eight “dummy” clocks are
also required before the SFDP register contents are shifted out on the falling edge of the 40th
CLK with most significant bit (MSB) first as shown in Figure 56. For SFDP register values and
descriptions, refer to the following SFDP Definition table.

Note: 1. A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP
Register.

Figure 56 Read SFDP Register Instruction

Serial Flash Discoverable Parameter (JEDEC Revision 1.0) Definition Table

BYTE
DATA DESCRIPTION COMMENT
ADDRESS
00h 53h SFDP Signature
01h 46h SFDP Signature SFDP Signature
02h 44h SFDP Signature = 50444653h
03h 50h SFDP Signature
04h 00h SFDP Minor Revision Number
JEDEC Revision 1.0
05h 01h SFDP Major Revision Number
06h 00h Number of Parameter Headers (NPH) 1 Parameter Header
07h FFh Reserved
08h 00h PID(3)(0): ID Number 00h = JEDEC specified
09h 00h PID(0): Parameter Table Minor Revision Number JEDEC Revision 1.0

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 54
 BYTE
DATA DESCRIPTION COMMENT
ADDRESS
0Ah 01h PID(0): Parameter Table Major Revision Number
0Bh 09h PID(0): Parameter Table Length 9 Dwords(2)
0Ch 80h PID(0): Parameter Table Pointer (PTP) (A7-A0)
PID(0) Pointer =
0Dh 00h PID(0): Parameter Table Pointer (PTP) (A15-A8)
000080h
0Eh 00h PID(0): Parameter Table Pointer (PTP) (A23-A16)
0Fh FFh Reserved
10h FFh Reserved
...(1) FFh Reserved
7Fh FFh Reserved
Bit[7:5]=111 Reserved
Bit[4:3]=00 Non-volatile Status Register
80h E5h
Bit[2]=1 Page Programmable
Bit[1:0]=01 Supports 4KB Erase
81h 20h 4K-Byte Erase Opcode
Bit[7] =1 Reserved
Bit[6] =1 Supports (1-1-4) Fast Read
Bit[5] =1 Supports (1-4-4) Fast Read
Bit[4] =1 Supports (1-2-2) Fast Read
82h F1h Bit[3] =0 Not support Dual Transfer
Rate
Bit[2:1]=00 3-Byte/24-Bit Only
Addressing
Bit[0] =1 Supports (1-1-2) Fast Read
83h FFh Reserved
84h FFh Flash Size in Bits
85h FFh Flash Size in Bits 8 Mega Bits =
86h 7Fh Flash Size in Bits 007FFFFFh
87h 00h Flash Size in Bits
Bit[7:5]=010 8 Mode Bits are needed
88h 44h Fast Read Quad I/O
Bit[4:0]=00100 16 Dummy Bits are needed
Setting
89h EBh Quad Input Quad Output Fast Read Opcode
Bit[7:5]=000 No Mode Bits are needed
8Ah 08h Fast Read Quad
Bit[4:0]=01000 8 Dummy Bits are needed
Output Setting
8Bh 6Bh Single Input Quad Output Fast Read Opcode
Bit[7:5]=000 No Mode Bits are needed
8Ch 08h Fast Read Dual Output
Bit[4:0]=01000 8 Dummy Bits are needed
Setting
8Dh 3Bh Single Input Dual Output Fast Read Opcode
Bit[7:5]=100 8 Mode bits are needed
8Eh 80h Fast Read Dual I/O
Bit[4:0]=00000 No Dummy bits are needed
Setting
8Fh BBh Dual Input Dual Output Fast Read Opcode
Bit[7:5]=111 Reserved
Bit[4]=1 support (4-4-4) Fast Read
90h FEh
Bit[3:1]=111 Reserved
Bit[0]=0 Not support (2-2-2) Fast Read
91h FFh Reserved
92h FFh Reserved
93h FFh Reserved
94h FFh Reserved
95h FFh Reserved
No Mode Bits or Dummy Bits for (2-2-2) Fast
96h 00h
Read

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 55
 BYTE
DATA DESCRIPTION COMMENT
ADDRESS
97h 00h Not support (2-2-2) Fast Read
98h FFh Reserved
99h FFh Reserved
Bit[7:5]=000 No Mode bits are needed
9Ah 08h
Bit[4:0]=01000 8 Dummy bits are needed
9Bh EBh QPI Fast Read Opcode
9Ch 0Ch Sector Type 1 Size (4KB)
9Dh 20h Sector Type 1 Opcode Sector Erase
9Eh 0Fh Sector Type 2 Size (32KB) Type & Opcode
9Fh 52h Sector Type 2 Opcode
A0h 10h Sector Type 3 Size (64KB)
A1h D8h Sector Type 3 Opcode Sector Erase
A2h 00h Sector Type 4 Size (256KB) – Not supported Type & Opcode
A3h 00h Sector Type 4 Opcode – Not supported
...(1) FFh Reserved
FFh FFh Reserved
Notes:
1. Data stored in Byte Address 10h to 7Fh & A4h to FFh are Reserved, the value is FFh.
2. 1 Dword = 4 Bytes
3. PID(x) = Parameter Identification Table (x)

11.36. Erase Security Sectors (44h)

The FM25Q08 offers four 256-byte Security Sectors which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and
other important information separately from the main memory array.

The Erase Security Sector instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Sector Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the CS# pin low and
shifting the instruction code “44h” followed by a 24-bit address A23-A0 to erase one of the four
Security Sectors.

ADDRESS A23-16 A15-12 A11-8 A7-0

Security Sector #0 00h 0000 0000 Don’t Care
Security Sector #1 00h 0001 0000 Don’t Care
Security Sector #2 00h 0010 0000 Don’t Care
Security Sector #3 00h 0011 0000 Don’t Care

The Erase Security Sector instruction sequence is shown in Figure 57. The CS# pin must be
driven high after the eighth bit of the last byte has been latched. If this is not done the instruction
will not be executed. After CS# is driven high, the self-timed Erase Security Sector operation will
commence for a time duration of tSE (See “12.6 AC Electrical Characteristics”). While the Erase
Security Sector cycle is in progress, the Read Status Register instruction may still be accessed
for checking the status of the WIP bit. The WIP bit is a 1 during the erase cycle and becomes a 0
when the cycle is finished and the device is ready to accept other instructions again. After the
Erase Security Sector cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Security Sector Lock Bits (LB3-0) in the Status Register-2 can be used to
OTP protect the Security Sectors. Once a lock bit is set to 1, the corresponding Security Sector
will be permanently locked, Erase Security Sector instruction to that register will be ignored (See
“10.9 Security Sector Lock Bits (LB3, LB2, LB1, LB0)” for detail descriptions).

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 56
 Figure 57 Erase Security Sectors Instruction (SPI Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 57
11.37. Program Security Sectors (42h)
The Program Security Sector instruction is similar to the Page Program instruction. It allows from
one byte to 256 bytes of Security Sector data to be programmed at previously erased (FFh)
memory locations. A Write Enable instruction must be executed before the device will accept the
Program Security Sector Instruction (Status Register bit WEL= 1). The instruction is initiated by
driving the CS# pin low then shifting the instruction code “42h” followed by a 24-bit address A23-
A0 and at least one data byte, into the DI pin. The CS# pin must be held low for the entire length
of the instruction while data is being sent to the device.

ADDRESS A23-16 A15-12 A11-8 A7-0

Security Sector #0 00h 0000 0000 Byte Address
Security Sector #1 00h 0001 0000 Byte Address
Security Sector #2 00h 0010 0000 Byte Address
Security Sector #3 00h 0011 0000 Byte Address

The Program Security Sector instruction sequence is shown in Figure 58. The Security Sector
Lock Bits (LB3-0) in the Status Register-2 can be used to OTP protect the Security Sectors. Once
a lock bit is set to 1, the corresponding Security Sector will be permanently locked, Program
Security Sector instruction to that register will be ignored (See “10.9 Security Sector Lock Bits
(LB3, LB2, LB1, LB0)”, “11.20 Page Program (02h)” for detail descriptions).

Figure 58 Program Security Sectors Instruction (SPI Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 58
11.38. Read Security Sectors (48h)
The Read Security Sector instruction is similar to the Fast Read instruction and allows one or
more data bytes to be sequentially read from one of the four Security Sectors. The instruction is
initiated by driving the CS# pin low and then shifting the instruction code “48h” followed by a 24-
bit address A23-A0 and eight “dummy” clocks into the DI pin. The code and address bits are
latched on the rising edge of the CLK pin. After the address is received, the data byte of the
addressed memory location will be shifted out on the DO pin at the falling edge of CLK with most
significant bit (MSB) first. The byte address is automatically incremented to the next byte address
after each byte of data is shifted out. Once the byte address reaches the last byte of the register
(byte FFh), it will be reset to 00h, the first byte of the register, and continue to increment. The
instruction is completed by driving CS# high. The Read Security Sector instruction sequence is
shown in Figure 59. If a Read Security Sector instruction is issued while an Erase, Program or
Write cycle is in process (WIP =1) the instruction is ignored and will not have any effect on the
current cycle. The Read Security Sector instruction allows clock rates from D.C. to a maximum of
FR (see “12.6 AC Electrical Characteristics”).

ADDRESS A23-16 A15-12 A11-8 A7-0

Security Sector #0 00h 0000 0000 Byte Address
Security Sector #1 00h 0001 0000 Byte Address
Security Sector #2 00h 0010 0000 Byte Address
Security Sector #3 00h 0011 0000 Byte Address

Figure 59 Read Security Sectors Instruction (SPI Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 59
11.39. Set Read Parameters (C0h)
In QPI mode, to accommodate a wide range of applications with different needs for either
maximum read frequency or minimum data access latency, “Set Read Parameters (C0h)”
instruction can be used to configure the number of dummy clocks for “Fast Read (0Bh)”, “Fast
Read Quad I/O (EBh)” & “Burst Read with Wrap (0Ch)” instructions, and to configure the number
of bytes of “Wrap Length” for the “Burst Read with Wrap (0Ch)” instruction.

In Standard SPI mode, the “Set Read Parameters (C0h)” instruction is not accepted. The dummy
clocks for various Fast Read instructions in Standard/Dual/Quad SPI mode are fixed, please refer
to Table 5~Table 8 the Instruction set for details. The “Wrap Length” is set by W5-4 bit in the “Set
Burst with Wrap (77h)” instruction. This setting will remain unchanged when the device is
switched from Standard SPI mode to QPI mode.

The default “Wrap Length” after a power up or a Reset instruction is 8 bytes, the default number
of dummy clocks is 2.
DUMMY MAXIMUM READ P1 – P0 WRAP LENGTH
P5 – P4
CLOCKS FREQ. 00 8-byte
00 2 50MHz 01 16-byte
01 4 80MHz 10 32-byte
10 6 104MHz 11 64-byte
11 8 104MHz

Figure 60 Set Read Parameters Instruction (QPI Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 60
11.40. Burst Read with Wrap (0Ch)
The “Burst Read with Wrap (0Ch)” instruction provides an alternative way to perform the read
operation with “Wrap Around” in QPI mode. The instruction is similar to the “Fast Read (0Bh)”
instruction in QPI mode, except the addressing of the read operation will “Wrap Around” to the
beginning boundary of the “Wrap Length” once the ending boundary is reached.

The “Wrap Length” and the number of dummy clocks can be configured by the “Set Read
Parameters C0h)” instruction.

Figure 61 Burst Read with Wrap Instruction (QPI Mode only)

11.41. Enable QPI (38h)

The FM25Q08 support both Standard/Dual/Quad Serial Peripheral Interface (SPI) and Quad
Peripheral Interface (QPI). However, SPI mode and QPI mode can not be used at the same time.
“Enable QPI (38h)” instruction is the only way to switch the device from SPI mode to QPI mode.

Upon power-up, the default state of the device upon is Standard/Dual/Quad SPI mode. See Table
5~Table 7 Instruction Set for all supported SPI commands. In order to switch the device to QPI
mode, the Quad Enable (QE) bit in Status Register 2 must be set to 1 first, and an “Enable QPI
(38h)” instruction must be issued. If the Quad Enable (QE) bit is 0, the “Enable QPI (38h)”
instruction will be ignored and the device will remain in SPI mode.

See Table 8 Instruction Set for all the commands supported in QPI mode.

When the device is switched from SPI mode to QPI mode, the existing Write Enable and
Program/Erase Suspend status, and the Wrap Length setting will remain unchanged.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 61
 Figure 62 Enable QPI Instruction (SPI Mode only)

11.42. Disable QPI (FFh)

In order to exit the QPI mode and return to the Standard/Dual/Quad SPI mode, a “Disable QPI
(FFh)” instruction must be issued.

When the device is switched from QPI mode to SPI mode, the existing Write Enable Latch (WEL)
and Program/Erase Suspend status and the Wrap Length setting will remain unchanged.

CS#
Mode 3 0 1 Mode 3
CLK
Mode 0 Mode 0
Instruction
FFh
DQ0

DQ1

DQ2

DQ3

Figure 63 Disable QPI Instruction (QPI Mode only)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 62
11.43. Enable Reset (66h) and Reset (99h)
Because of the small package and the limitation on the number of pins, the FM25Q08 provide a
software Reset instruction instead of a dedicated RESET pin. Once the Reset instruction is
accepted, any on-going internal operations will be terminated and the device will return to its
default power-on state and lose all the current volatile settings, such as Volatile Status Register
bits, Write Enable Latch (WEL) status, Program/Erase Suspend status, Read parameter setting
P7-P0, Continuous Read Mode bit setting M7-M0 and Wrap Bit setting W6-W4.

“Enable Reset (66h)” and “Reset (99h)” instructions can be issued in either SPI mode or QPI
mode. To avoid accidental reset, both instructions must be issued in sequence. Any other
commands other than “Reset (99h)” after the “Enable Reset (66h)” command will disable the
“Reset Enable” state. A new sequence of “Enable Reset (66h)” and “Reset (99h)” is needed to
reset the device. Once the Reset command is accepted by the device, the device will take
approximately tRST=30μs to reset. During this period, no command will be accepted.

Data corruption may happen if there is an on-going or suspended internal Erase or Program
operation when Reset command sequence is accepted by the device. It is recommended to
check the WIP bit and the SUS bit in Status Register before issuing the Reset command
sequence.

Figure 64 Enable Reset and Reset Instruction Sequence (SPI Mode)

Figure 65 Enable Reset and Reset Instruction Sequence (QPI Mode)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 63
12. Electrical Characteristics
12.1. Absolute Maximum Ratings
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Voltage on I/O Pin with Respect to Ground -0.5V to VCC+0.4V
VCC -0.5V to 4.0V

*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of this specification are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

12.2. Pin Capacitance

PARAMETER SYMBOL CONDITIONS Max Units
Input Capacitance CIN(1) VIN = 0V, f = 5 MHz 6 pF
Output Capacitance COUT(1) VOUT = 0V, f = 5 MHz 8 pF
Note: 1. This parameter is characterized and is not 100% tested.

12.3. Power-up Timing

Applicable over recommended operating range from: TA = -40°C to 85°C, VCC = 2.7V to 3.6V, (unless
otherwise noted).
SPEC
PARAMETER SYMBOL UNIT
MIN MAX
VCC (min) to CS# Low tVSL 10 µs
Time Delay Before Write Instruction tPUW 1 10 ms

Figure 66 Power-up Timing

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 64
12.4. DC Electrical Characteristics
Table 9 DC Characteristics
Applicable over recommended operating range from: TA = -40°C to 85°C, VCC = 2.7V to 3.6V, (unless
otherwise noted).
SPEC
SYMBOL PARAMETER CONDITIONS UNIT
MIN TYP MAX
Vcc Supply Voltage 2.7 3.6 V
ILI Input Leakage Current ±2 µA
ILO Output Leakage Current ±2 µA
VCC=3.6V, CS# = VCC,
ICC1 Standby Current 1 20 µA
VIN = Vss or VCC
Deep Power-down VCC=3.6V, CS# = VCC,
ICC2 1 20 µA
Current VIN = Vss or VCC
VCC=3.6V,CLK=0.1VCC/0.
ICC3 20 mA
9VCC, at 50MHz, DQ open
Read Data Current (1)
VCC=3.6V,CLK=0.1VCC/0.
ICC3 25 mA
9VCC, at 104MHz, DQ open
Operating Current
ICC4 VCC=3.6V,CS#=VCC 8 12 mA
(WRSR)
ICC5 Operating Current (PP) VCC=3.6V,CS#=VCC 20 25 mA
ICC6 Operating Current (SE) VCC=3.6V,CS#=VCC 20 25 mA
ICC7 Operating Current (BE) VCC=3.6V,CS#=VCC 20 25 mA
VIL(2) Input Low Voltage -0.5 0.3VCC V
VIH(2) Input High Voltage 0.7VCC VCC+0.4 V
VOL Output Low Voltage IOL = 1.6 mA 0.4 V
VOH Output High Voltage IOH = -100 µA VCC-0.2 V
Write Inhibit Threshold
VWI 1.0 2.0 V
Voltage
Notes:
1. Checker Board Pattern.
2. VIL min and VIH max are reference only and are not tested.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 65
12.5. AC Measurement Conditions
Table 10 AC Measurement Conditions
SPEC
SYMBOL PARAMETER UNIT
MIN MAX
CL Load Capacitance 20 pF
TR, TF Input Rise and Fall Times 5 ns
VIN Input Pulse Voltages 0.2 VCC to 0.8 VCC V
IN Input Timing Reference Voltages 0.3 VCC to 0.7 VCC V
OUT Output Timing Reference Voltages 0.5VCC V

Input Levels Input Timing Reference Level Output Timing Reference Level
0.8 Vcc
0.7 Vcc AC
Measurement 0.5 Vcc
0.3 Vcc Level
0.2 Vcc

Figure 67 AC Measurement I/O Waveform

12.6. AC Electrical Characteristics

Table 11 AC Characteristics
Applicable over recommended operating range from: TA = -40°C to 85°C, VCC = 2.7V to 3.6V, (unless
otherwise noted).
SPEC
SYMBOL PARAMETER UNIT
MIN TYP MAX
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
FR WRDI, WRSR 104 MHz
FAST_READ for Quad/QPI：
INPUT=0.1VCC/0.9VCC
fR Serial Clock Frequency for READ, RDSR, RDID 50 MHz
tCH1(1) Serial Clock High Time 4.5 ns
tCL1(1) Serial Clock Low Time 4.5 ns
tCLCH(2) Serial Clock Rise Time (Slew Rate) 0.1 V/ns
tCHCL(2) Serial Clock Fall Time (Slew Rate) 0.1 V/ns
tSLCH CS# Active Setup Time 5 ns
tCHSH CS# Active Hold Time 5 ns
tSHCH CS# Not Active Setup Time 5 ns
tCHSL CS# Not Active Hold Time 5 ns
tSHSL1 CS# High Time (for Array Read Æ Array Read) 7 ns
CS# High Time (for Erase or Program Æ Read
tSHSL2 Status Registers) 40 ns
Volatile Status Register Write Time
tSHQZ(2) Output Disable Time 7 ns
tCLQX Output Hold Time 0 ns

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 66
 SPEC
SYMBOL PARAMETER UNIT
MIN TYP MAX
tDVCH Data In Setup Time 1.5 ns
tCHDX Data In Hold Time 4 ns
tHLCH HOLD# Low Setup Time ( relative to CLK ) 5 ns
tHHCH HOLD# High Setup Time ( relative to CLK ) 5 ns
tCHHH HOLD# Low Hold Time ( relative to CLK ) 5 ns
tCHHL HOLD# High Hold Time ( relative to CLK ) 5 ns
tHLQZ(2) HOLD# Low to High-Z Output 12 ns
tHHQX(2) HOLD# High to Low-Z Output 7 ns
tCLQV Output Valid from CLK 6 ns
tWHSL Write Protect Setup Time before CS# Low 20 ns
tSHWL Write Protect Hold Time after CS# High 100 ns
tDP(2) CS# High to Deep Power-down Mode 3 µs
CS# High to Standby Mode without Electronic
tRES1(2) 3 µs
Signature Read
CS# High to Standby Mode with Electronic
tRES2(2) 1.8 µs
Signature Read
tSUS(2) CS# High to next Instruction after Suspend 20 µs
tRST(2) CS# High to next Instruction after Reset 20 µs
tW Write Status Register Cycle Time 10 15 ms
tPP Page Programming Time 1.5 5 ms
tSE Sector Erase Time 0.09 0.3 s
tBE Block Erase Time (32KB) 0.3 1.8 s
tBE Block Erase Time (64KB) 0.5 2 s
tCE Chip Erase Time 8 32 s
Notes:
1. tCH+tCL >= 1 / FR or 1/fR ;
3. This parameter is characterized and is not 100% tested.

CS#
tCH
CLK
tCLQV tCLQV tCL tSHQZ
tCLQX tCLQX
I/O
LSB OUT

tQLQH
tQHQL

Figure 68 Serial Output Timing

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 67
 Figure 69 Serial Input Timing

Figure 70 Hold Timing

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 68
13. Ordering Information
FM 25Q 08 -XXX -C -H
Company Prefix
FM = Fudan Microelectronics Group Co.,ltd

Product Family
25Q = 2.7~3.6V Serial Flash with 4KB Uniform-Sector,
Dual/Quad SPI & QPI

Product Density
08= 8M-bit

Package Type (1)

SO = 8-pin SOP（150mil）
SOB = 8-pin SOP（208mil）
DN = 8-pin TDFN (2mm x 3mm) (2)
DNA = 8-pin TDFN (5mm x 6mm)

Product Carrier
U = Tube
T = Tape and Reel

HSF ID Code
G = RoHS Compliant, Halogen-free, Antimony-free

Note:
1. For SO package, MSL1 package are available, for detail please contact local sales office
2. For Thinner package please contact local sales office.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 69
14. Part Marking Scheme

14.1. SOP8 (150mil)

14.2. SOP8 (208mil)

14.3. TDFN8 (2x3mm)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 70
14.4. TDFN8 (5x6mm)

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 71
15. Packaging Information
SOP 8 (150mil)

Symbol MIN MAX

A 1.350 1.750
A1 0.050 0.250
b 0.330 0.510
c 0.150 0.260
D 4.700 5.150
E1 3.700 4.100
E 5.800 6.200
e 1.270(BSC)
L 0.400 1.270
θ 0° 8°
NOTE:
1. Dimensions are in Millimeters.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 72
 SOP 8 (208mil)

Symbol MIN MAX

A –– 2.100
A1 0.050 0.250
b 0.350 0.500
c 0.100 0.250
D 5.130 5.330
E1 5.180 5.380
E 7.700 8.100
e 1.270(BSC)
L 0.500 0.850
θ 0° 8°
NOTE:
1. Dimensions are in Millimeters.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 73
 TDFN8(2x3mm)

Symbol MIN MAX

A 0.700 0.800
A1 0.000 0.050
D 1.900 2.100
E 2.900 3.100
D2 1.400 1.600
E2 1.400 1.700
k 0.150(MIN)
b 0.200 0.300
e 0.500(TYP)
L 0.200 0.500
NOTE:
1. Dimensions are in Millimeters.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 74
 TDFN 8 (5x6mm)

Symbol MIN MAX

A 0.700 0.800
A1 0.000 0.050
D 4.900 5.100
D1 3.900 4.300
E 5.900 6.100
E1 3.300 3.500
b 0.350 0.450
e 1.270TYP
L 0.500 0.700
NOTE:
1 Dimensions are in Millimeters.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 75
16. Revision History
Publication
Version Pages Revise Description
date
preliminary Nov. 2013 76 Initial Document Release.
1.0 Sep. 2014 78 Added UDFN8 and VSOP8 Package offering.
1 Updated the chapters of packaging type, ordering
information, Part marking scheme and packaging
1.1 Dec.2014 77 information.
2 Added Erase suspend operation limitation,
3 Corrected the typo.
1 Updated Packaging Information
1.2 Sep. 2015 77 2 Updated Features
3 Corrected the typo.

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 76
 Sales and Service
Shanghai Fudan Microelectronics Group Co., Ltd.
Address: Bldg No. 4, 127 Guotai Rd,
Shanghai City China.
Postcode: 200433
Tel: (86-021) 6565 5050
Fax: (86-021) 6565 9115

Shanghai Fudan Microelectronics (HK) Co., Ltd.

Address: Unit 506, 5/F., East Ocean Centre, 98 Granville Road,
Tsimshatsui East, Kowloon, Hong Kong
Tel: (852) 2116 3288 2116 3338
Fax: (852) 2116 0882

Beijing Office
Address: Room 423, Bldg B, Gehua Building,
1 QingLong Hutong, Dongzhimen Alley north Street,
Dongcheng District, Beijing City, China.
Postcode: 100007
Tel: (86-010) 8418 6608
Fax: (86-010) 8418 6211

Shenzhen Office
Address: Room.1301, Century Bldg, No. 4002, Shengtingyuan Hotel,
Huaqiang Rd (North),
Shenzhen City, China.
Postcode: 518028
Tel: (86-0755) 8335 0911 8335 1011 8335 2011 8335 0611
Fax: (86-0755) 8335 9011

Shanghai Fudan Microelectronics (HK) Ltd Taiwan

Representative Office
Address: Unit 1225, 12F., No 252, Sec.1 Neihu Rd., Neihu Dist.,
Taipei City 114, Taiwan
Tel : (886-2) 7721 1890 (886-2) 7721 1889
Fax: (886-2) 7722 3888

Shanghai Fudan Microelectronics (HK) Ltd Singapore

Representative Office
Address : 237, Alexandra Road, #07-01 The Alexcier, Singapore
159929
Tel : (65) 6472 3688
Fax: (65) 6472 3669

Shanghai Fudan Microelectronics Group Co., Ltd NA Office

Address: 2490 W. Ray Road Suite#2
Chandler, AZ 85224 USA
Tel : (480) 857-6500 ext 18

Web Site: http://www.fmsh.com/

Datasheet
FM25Q08 8M-BIT SERIAL FLASH MEMORY Ver 1.2 77