FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™

May 2008

FDS6990AS
Dual 30V N-Channel PowerTrench® SyncFET™
Features General Description
■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET
RDS(ON) = 28 mΩ @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-
■ Includes SyncFET Schottky diode plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low RDS(ON) and low gate charge.
■ Low gate charge (10nC typical)
Each MOSFET includes integrated Schottky diodes using Fair-
■ High performance trench technology for extremely low child’s monolithic SyncFET technology. The performance of the
RDS(ON) FDS6990AS as the low-side switch in a synchronous rectifier is
■ High power and current handling capability similar to the performance of the FDS6990A in parallel with a
Schottky diode.
Applications
■ DC/DC converter
■ Motor drives

D1
D1 5 4
D2 Q1

D2 6 3

7 Q2 2
SO-8 G1
S1
Pin 1 G2 8 1
S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) 7.5 A
– Pulsed 20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS6990AS FDS6990AS 13" 12mm 2500 units

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS6990AS Rev. A1
 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
∆BVDSS Breakdown Voltage Temperature ID = 1 mA, Referenced to 25°C 31 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V
∆VGS(th) Gate Threshold Voltage ID = 1 mA, Referenced to 25°C –3 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 7.5 A 17 22 mΩ
On–Resistance VGS = 10 V, ID = 7.5 A, TJ = 125°C 26 35
VGS = 4.5 V, ID = 6.5 A 21 28
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 15 V, ID = 10 A 29 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 550 pF
f = 1.0 MHz
Coss Output Capacitance 330 pF
Crss Reverse Transfer Capacitance 60 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.1 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, 8 16 ns
VGS = 10 V, RGEN = 6 Ω
tr Turn–On Rise Time 5 10 ns
td(off) Turn–Off Delay Time 24 38 ns
tf Turn–Off Fall Time 4 88 ns
td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, 9 18 ns
VGS = 4.5 V, RGEN = 6 Ω
tr Turn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 14 24 ns
tf Turn–Off Fall Time 5 10 ns
Qg(TOT) Total Gate Charge at Vgs = 10V VDD = 15 V, ID = 10 A, VGS = 5 V 10 14 nC
Qg Total Gate Charge at Vgs = 5V 6 8 nC
Qgs Gate–Source Charge 1.5 nC
Qgd Gate–Drain Charge 2.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.9 A
VSD Drain–Source Diode Forward VGS = 0 V, IS = 2.3 A (Note 2) 0.6 0.7 V
Voltage
trr Diode Reverse Recovery Time IF = 10A, 18 nS
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 11 nC

2 www.fairchildsemi.com
FDS6990AS Rev. A1
 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when mounted b) 125°C/W when c) 135°C/W when

on a 0.5 in2 pad of 2 oz mounted on a 0.02 in2 mounted on a
copper pad of 2 oz copper minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4

3 www.fairchildsemi.com
FDS6990AS Rev. A1
 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
20 2
VGS = 10V 3.5V VGS = 3.0V

DRAIN-SOURCE ON-RESISTANCE
1.8
4.5V 4.0V
15
I D, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
3.0V
1.6

3.5V
10 1.4
4.0V
4.5V
1.2
5.0V
5 6.0V
2.5V 10V
1

0 0.8
0 0.5 1 1.5 2 0 4 8 12 16 20
VDS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.07
I D = 7.5A I D = 3.75A
VGS = 10V
DRAIN-SOURCE ON-RESISTANCE

0.06
RDS(ON), ON-RESISTANCE (OHM)
1.4
RDS(ON), NORMALIZED

0.05
1.2

0.04
TA = 125 oC
1
0.03

0.8
0.02
T A = 25 oC

0.6 0.01
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ , JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

20 100
VDS = 5V VGS = 0V
IS , REVERSE DRAIN CURRENT (A)

16 10
I D, DRAIN CURRENT (A)

12 1
T A = 125 o C

8 0.1
o 25 oC
TA = 125 C
-55 oC
-55 o C
4 0.01

25o C
0 0.001
1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8
VGS, GATE TO SOURCE VOLTAGE (V) VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

4 www.fairchildsemi.com
FDS6990AS Rev. A1
 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
10 1500
I D =7.5A f = 1MHz
VGS = 0V
VGS, GATE-SOURCE VOLTAGE (V)

8 1200
VDS = 10V

CAPACITANCE (pF)
20V
6 900

15V
Ciss
4 600

Coss
2 300
Crss

0 0
0 2 4 6 8 10 12 0 5 10 15 20 25 30
Q g, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
RDS(ON) LIMIT SINGLE PULSE
R θJA = 135°C/W

P(pk), PEAK TRANSIENT POWER (W)

100µs 40 TA = 25°C
10 1ms
I D, DRAIN CURRENT (A)

10ms
100s 30
1s
1
10s
20
DC
VGS = 10V
0.1 SINGLE PULSE
R θJA = 135 oC/W 10
TA = 25 oC

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
R θJA(t) = r(t) * R θ JA
0.2 R θJA = 135 °C/W
0.1 0.1

0.05 P(pk)
0.02 t1
0.01 t2
0.01
T J – TA = P * R θJA(t)
SINGLE PULSE Duty Cycle, D = t 1 / t 2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

5 www.fairchildsemi.com
FDS6990AS Rev. A1
 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
Fairchild’s SyncFET process embeds a Schottky diode in paral- in the device.
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
0.1
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6990AS.

I DSS, REVERSE LEAKAGE CURRENT (A)

0.01
TA = 125° C

0.001

TA = 100° C
0.0001
0.4A/Div

0.00001
TA = 25°C

0.000001
0 5 10 15 20 25 30
VDS , REVERSE VOLTAGE (V)

12.5nS/Div Figure 14. SyncFET body diode reverse leakage

versus drain-source voltage and temperature.
Figure 12. FDS6990AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDS6990A).
0.4A/Div

12.5nS/Div

Figure 13. Non-SyncFET (FDS6990A) body

diode reverse recovery characteristic.

6 www.fairchildsemi.com
FDS6990AS Rev. A1
 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)

L
VDS
BVDSS
VGS tP
VDS
RGE DUT + IAS
VDD VDD
0V –
VGS
tp IAS
vary tP to obtain
required peak IAS 0.01Ω

tAV

Figure 15. Unclamped Inductive Figure 16. Unclamped Inductive

Load Test Circuit Waveforms

Drain Current
Same type as DUT

+ 50k
10V
- 10 F
1 F +
VDD
QG(TOT)
–
VGS 10V
DUT
VGS QGS QGD

Ig(REF)

Charge, (nC)

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform

tON
tOFF
td(ON) td(OFF)
RL
VDS VDS tr tf
90% 90%

VGS +
10% 10%
RGEN DUT VDD 0V

– 90%
VGS
VGS 50% 50%
Pulse Width ≤ 1µs Pulse Width
Duty Cycle ≤ 0.1% 10%
0V

Figure 19. Switching Time Figure 20. Switching Time Waveforms

Test Circuit

7 www.fairchildsemi.com
FDS6990AS Rev. A1
 TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx® FPS™ PDP-SPM™ The Power Franchise®
Build it Now™ F-PFS™ Power-SPM™
CorePLUS™ FRFET® PowerTrench® tm

CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™

CROSSVOLT™ Green FPS™ QFET® TinyBuck™
CTL™ Green FPS™ e-Series™ QS™ TinyLogic®
Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™
EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™
EfficentMax™ ISOPLANAR™ Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™
™
MICROCOUPLER™ SMART START™ µSerDes™
MicroFET™ SPM®
®
MicroPak™ STEALTH™
Fairchild® MillerDrive™ SuperFET™ UHC®
Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™
FACT® OPTOLOGIC® SuperSOT™-8 VCX™
FAST® OPTOPLANAR® SuperMOS™ VisualMax™
®
FastvCore™ ®
FlashWriter® *
tm

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support,
(a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Obsolete Not In Production
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDS6990AS Rev. A1 WWW. fairchildsemicom