BAS21
BAS21
CONNECTION DIAGRAM
A82.
2
1 2
1 2 NC
SOT-23
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25C unless otherwise noted
Parameter
Value
250 200 600 700 1.0 2.0 -55 to +150 150
Units
V mA mA mA A A C C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
BAS21 350 2.8 357
Units
mW mW/C C/W
2002 Fairchild Semiconductor Corporation
BAS21. Rev. A1
BAS21
General Purpose High Voltage Diode
(continued)
Electrical Characteristics
Symbol
BV IR VF CO TRR
TA = 25C unless otherwise noted
Parameter
Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Diode Capacitance Reverse Recovery Time
Test Conditions
IR = 100 A VR = 200 V VR = 200 V, TA = 150 C IF = 100 mA IF = 200 mA VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100
Min
250
Max
100 100 1.0 1.25 5.0 50
Units
V nA A V V pF nS
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Rev. H7
