Si6993DQ

New Product Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFETS
VDS (V) rDS(on) (W) ID (A) APPLICATIONS
0.031 @ VGS = - 10 V - 4.7 D Load Switch
- 30 D Battery Switch
0.048 @ VGS = - 4.5 V - 3.8

S1 S2

TSSOP-8

D1 1 D 8 D2 G1 G2
S1 2 7 S2
S1 3 6 S2
G1 4 5 G2

Top View
Ordering Information: Si6993DQ -T1
D1 D2

P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS "20
TA = 25_C - 4.7 - 3.6
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C - 3.8 - 3.2
A
Pulsed Drain Current (10 ms Pulse Width) IDM - 30
Continuous Source Current (Diode Conduction)a IS - 1.0 - 0.70
TA = 25_C 1.14 0.83
Maximum Power Dissipationa PD W
TA = 70_C 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 86 110
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 124 150 C/W
_C/W
Maximum Junction-to-Foot Steady State RthJF 52 65

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72369 www.vishay.com

S-31912—Rev. A, 15-Sep-03 1
Si6993DQ
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 - 3.0 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 30 V, VGS = 0 V, TJ = 55_C - 10
On-State Drain Currenta ID(on) VDS w - 5 V, VGS = - 10 V - 15 A
VGS = - 10 V, ID = - 4.7 A 0.024 0.031
Drain-Source On State Resistancea
Drain Source On-State rDS(on) W
VGS = - 4.5 V, ID = - 3.8 A 0.038 0.048

Forward Transconductancea gfs VDS = - 15 V, ID = - 4.7 A 14 S

Diode Forward Voltagea VSD IS = - 1.0 A, VGS = 0 V - 0.74 - 1.1 V

Dynamicb
Total Gate Charge Qg 13 20
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A 3 nC
Gate-Drain Charge Qgd 5.8
Gate Resistance Rg f = 1.0 MHz 4.6 W
Turn-On Delay Time td(on) 13 20
Rise Time tr 14 22
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 52 80 ns
Fall Time tf 26 40
Source-Drain Reverse Recovery Time trr IF = - 1.0 A, di/dt = 100 A/ms 40 60

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

30 30
TC = - 55_C
VGS = 10 thru 5 V
25_C
24 4V 24
I D - Drain Current (A)

125_C
I D - Drain Current (A)

18 18

12 12

6 6
3V

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72369

2 S-31912—Rev. A, 15-Sep-03
 Si6993DQ
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance

0.10 2000
r DS(on) - On-Resistance ( W )

0.08 1600

C - Capacitance (pF)
0.06 1200 Ciss

VGS = 4.5 V
0.04 800

VGS = 10 V
0.02 400 Coss

Crss
0.00 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

6 1.60
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)

ID = 4.7 A ID = 4.7 A
5
r DS(on) - On-Resistance (W)

1.40
(Normalized)

4
1.20

1.00
2

0.80
1

0 0.60
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

30 0.15

TJ = 150_C
10 0.12
r DS(on) - On-Resistance ( W )
I S - Source Current (A)

ID = 4.7 A
0.09
TJ = 25_C

1 0.06

0.03

0.1 0.00
0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Document Number: 72369 www.vishay.com

S-31912—Rev. A, 15-Sep-03 3
Si6993DQ
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100

0.4 80
V GS(th) Variance (V)

ID = 250 mA
0.2 60

Power (W)
0.0 40

- 0.2 20

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)

Safe Operating Area, Junction-to-Case

100
Limited by rDS(on)

10
I D - Drain Current (A)

1 ms

1 10 ms

100 ms
0.1 TC = 25_C
1s
Single Pulse
10 s
dc
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 124_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72369

4 S-31912—Rev. A, 15-Sep-03
 Si6993DQ
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)

Document Number: 72369 www.vishay.com

S-31912—Rev. A, 15-Sep-03 5