IPW60R075CP

CoolMOSTM Power Transistor

Product Summary
Features
V DS @ Tj,max 650 V
• Lowest figure-of-merit R ON x Qg
R DS(on),max 0.075 Ω
• Extreme dv/dt rated
Q g,typ 87 nC
• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

PG-TO247-3
• Ultra low gate charge

CoolMOS CP is designed for:

• Hard switching SMPS topologies for Server and Telecom

Type Package Marking

IPW60R075CP PG-TO247-3 6R075P

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 39 A

T C=100 °C 25

Pulsed drain current2) I D,pulse T C=25 °C 130

Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 1150 mJ

Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 1.7

Avalanche current, repetitive t AR2),3) I AR 11 A

MOSFET dv /dt ruggedness dv /dt V DS=0...480 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f >1 Hz) ±30

Power dissipation P tot T C=25 °C 313 W

Operating and storage temperature T j, T stg -55 ... 150 °C

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 2.2 page 1 2008-03-13

 IPW60R075CP

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current IS 26 A

T C=25 °C
Diode pulse current 2) I S,pulse 117

Reverse diode dv /dt 4) dv /dt 15 V/ns

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.4 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

Soldering temperature, 1.6 mm (0.063 in.)

T sold - - 260 °C
wavesoldering only allowed at leads from case for 10 s

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5

V DS=600 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 5 µA
T j=25 °C

V DS=600 V, V GS=0 V,
- 50 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=26 A,
Drain-source on-state resistance R DS(on) - 0.068 0.075 Ω
T j=25 °C

V GS=10 V, I D=26 A,
- 0.18 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 1.3 - Ω

Rev. 2.2 page 2 2008-03-13

 IPW60R075CP

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 4000 - pF

Output capacitance C oss f =1 MHz - 190 -

Effective output capacitance, energy

C o(er) - 180 -
related5)
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
C o(tr) - 480 -
related6)

Turn-on delay time t d(on) - 40 - ns

Rise time tr V DD=400 V, - 17 -

V GS=10 V, I D=26 A,
Turn-off delay time t d(off) R G=7.6 Ω - 110 -

Fall time tf - 7 -

Gate Charge Characteristics

Gate to source charge Q gs - 20 - nC

Gate to drain charge Q gd V DD=400 V, I D=26 A, - 30 -

Qg V GS=0 to 10 V
Gate charge total - 87 116

Gate plateau voltage V plateau - 5.0 - V

Reverse Diode

V GS=0 V, I F=26 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C

Reverse recovery time t rr - 500 - ns

V R=400 V, I F=I S,
Reverse recovery charge Q rr - 15 - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - 58 - A

1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD≤ID, di/dt≤100A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 2.2 page 3 2008-03-13

 IPW60R075CP
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

350 103
limited by on-state
resistance

300

1 µs
102 10 µs
250

100 µs
200
P tot [W]

I D [A]
101
1 ms
150 DC

10 ms

100
100

50

0 10-1
0 40 80 120 160 100 101 102 103
T C [°C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJC=f(tP) I D=f(V DS); T j=25 °C
parameter: D=t p/T parameter: V GS

100 180
10 V

20 V 8V

150
0.5

7V
10-1 0.2 120
Z thJC [K/W]

0.1
I D [A]

0.05 90
0.02 6V
0.01

10-2 single pulse 60

5.5 V

5V
30

4.5 V

10-3 0
10-5 10-4 10-3 10-2 10-1 0 5 10 15 20
t p [s] V DS [V]

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 IPW60R075CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C
parameter: V GS parameter: V GS

80 0.5
8V

7V
70 10 V
6V

20 V 0.4
6.5 V
60

5.5 V 7V
50 6V
0.3

R DS(on) [Ω]
20 V
I D [A]

5.5 V
40
5V 5V

0.2
30

4.5 V
20
0.1

10

0 0
0 5 10 15 20 0 20 40 60 80 100
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T j); I D=26 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j

0.2 200

C °25

160
0.15

120
R DS(on) [Ω]

I D [A]

0.1
98 %
C °150
typ 80

0.05
40

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]

Rev. 2.2 page 5 2008-03-13

 IPW60R075CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=26 A pulsed I F=f(V SD)
parameter: V DD parameter: T j

10 102
25 °C, 98%

120 V

150 °C, 98%

8 400 V
25 °C
150 °C

101
6
V GS [V]

I F [A]
4
100

0 10-1
0 20 40 60 80 100 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA

1200 700

1000

660

800
V BR(DSS) [V]
E AS [mJ]

600 620

400

580

200

0 540
20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

Rev. 2.2 page 6 2008-03-13

 IPW60R075CP
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

105 30

25
104
Ciss

20
3
10

E oss [µJ]
C [pF]

Coss 15

102
10

101
5
Crss

100 0
0 100 200 300 400 500 0 100 200 300 400 500 600
V DS [V] V DS [V]

Rev. 2.2 page 7 2008-03-13

 IPW60R075CP

Definition of diode switching characteristics

Rev. 2.2 page 8 2008-03-13

 IPW60R075CP

PG-TO247-3-21-41: Outlines

Rev. 2.2 page 9 2008-03-13

 IPW60R075CP

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 2.2 page 10 2008-03-13