SUP85N10-10, SUB85N10-10

Vishay Siliconix

N-Channel 100-V (D-S) 175 °C MOSFET

PRODUCT SUMMARY FEATURES

• TrenchFET® Power MOSFET
VDS (V) RDS(on) (Ω) ID (A)
• 175 °C Maximum Junction Temperature
0.0105 at VGS = 10 V
100 85a • Compliant to RoHS Directive 2002/95/EC
0.012 at VGS = 4.5 V

TO-220AB

TO-263

G
DRAIN connected to TAB

G D S
Top View S
G D S
SUB85N10-10
Top View N-Channel MOSFET
SUP85N10-10

ORDERING INFORMATION
Package Lead (Pb)-free
TO-220AB SUP85N10-10-E3
TO-263 SUB85N10-10-E3

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 85a
Continuous Drain Current (TJ = 150 °C) ID
TC = 125 °C 60a
A
Pulsed Drain Current IDM 240
Avalanche Current IAS 75
L = 0.1 mH
Single Pulse Avalanche Energy b EAS 280 mJ

TC = 25 °C (TO-220AB and TO-263) 250c

Maximum Power Dissipationb PD W
d
TA = 25 °C (TO-263) 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 °C/W
Junction-to-Case RthJC 0.6
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).

Document Number: 71141 www.vishay.com

S10-0107-Rev. E, 18-Jan-10 1
SUP85N10-10, SUB85N10-10
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 100 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 100 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain Current a ID(on) VDS = ≥ 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0085 0.0105
VGS = 4.5 V, ID = 20 A 0.010 0.012
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 10 V, ID = 30 A, TJ = 125 °C 0.017
VGS = 10 V, ID = 30 A, TJ = 175 °C 0.022
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S
Dynamicb
Input Capacitance Ciss 6550
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 665 pF
Reverse Transfer Capacitance Crss 265
Total Gate Chargec Qg 105 160
c Qgs VDS = 50 V, VGS = 10 V, ID = 85 A 17 nC
Gate-Source Charge
c Qgd 23
Gate-Drain Charge
Turn-On Delay Timec td(on) 12 25
Rise Time c tr VDD = 50 V, RL = 0.6 Ω 90 135
ns
Turn-Off DelayTime c td(off) ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 55 85
Fall Timec tf 130 195
b
Source-Drain Diode Ratings and Characteristics TC = 25 °C
Continuous Current IS 85
A
Pulsed Current ISM 240
Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr 85 140 ns
Peak Reverse Recovery Current IRM(REC) IF = 50 A, dI/dt = 100 A/µs 4.5 7 A
Reverse Recovery Charge Qrr 0.17 0.35 µC

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 71141

2 S10-0107-Rev. E, 18-Jan-10
 SUP85N10-10, SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
250 200
VGS = 10 V thru 6 V

5V
200
150
I D - Drain Current (A)

I D - Drain Current (A)

150

100

100

4V TC = 125 °C
50
50 - 55 °C
25 °C
3V
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

250
0.020

TC = - 55 °C
200
g fs - Transconductance (S)

R DS(on) - On-Resistance (Ω)

0.015
25 °C
150
125 °C VGS = 4.5 V
0.010 VGS = 10 V
100

0.005
50

0
0.000
0 20 40 60 80 100
0 20 40 60 80 100 120

ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

10 000 20

VDS = 50 V
VGS - Gate-to-Source Voltage (V)

8000 16 ID = 85 A
C - Capacitance (pF)

Ciss

6000 12

4000 8

2000 4
Crss
Coss

0 0
0 15 30 45 60 75 0 50 100 150 200

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

Document Number: 71141 www.vishay.com

S10-0107-Rev. E, 18-Jan-10 3
SUP85N10-10, SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.5 100
VGS = 10 V
ID = 30 A
2.0
R DS(on) - On-Resistance

I S - Source Current (A)

(Normalized)

1.5
TJ = 150 °C TJ = 25 °C
10

1.0

0.5

0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

1000 140

130 ID = 250 µA
100

IAV (A) at T A = 25 °C
120
I Dav (a)

VDS (V)

10
IAV (A) at T A = 150 °C
110

1
100

0.1 90
0.00001 0.0001 0.001 0.01 0.1 1 - 50 - 25 0 25 50 75 100 125 150 175

tin (s) TJ - Junction Temperature (°C)

Avalanche Current vs. Time TJ - Drain-Source Breakdown
vs. Junction-Temperature

www.vishay.com Document Number: 71141

4 S10-0107-Rev. E, 18-Jan-10
 SUP85N10-10, SUB85N10-10
Vishay Siliconix
THERMAL RATINGS
100 1000

80 10 µs
100
I D - Drain Current (A)

I D - Drain Current (A)

100 µs
60
Limited
10 by R DS(on)*
1 ms
40
10 ms
100 ms, DC
1 TC = 25 °C
20
Single Pulse

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
Maximum Avalanche and Drain Current * VGS > minimum VGS at which RDS(on) is specified
vs. Case Temperature Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1

0.05
0.02
Single Pulse

0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71141.

Document Number: 71141 www.vishay.com

S10-0107-Rev. E, 18-Jan-10 5
 Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
A MILLIMETERS INCHES
E
F DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
Q

b(1) 1.20 1.73 0.047 0.068

H(1)

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
D

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
1 2 3
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L(1)

L 13.35 14.02 0.526 0.552

M* L(1) 3.32 3.82 0.131 0.150
ØP 3.54 3.94 0.139 0.155
b(1)
Q 2.60 3.00 0.102 0.118
L

ECN: T14-0413-Rev. P, 16-Jun-14

DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
C Heatsink hole for HVM
b
e
J(1)
e(1)

D2

Revison: 16-Jun-14 1 Document Number: 71195

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jul-2024 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000