polyfet rf devices

LP702

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 70.0 Watts Single Ended
Laser Driver and others.
TM Package Style AP
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
150 Watts 1.00 C/W 200 C -65 C to 150 C 9.0 A 70 V 70 V 20 V

RF CHARACTERISTICS ( 70.0 WATTS OUTPUT )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 12 dB Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz
η Drain Efficiency 55 % Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 65 V Ids = 0.40 mA, Vgs = 0V

Idss Zero Bias Drain Current 4.0 mA Vds = 28.0 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.40 A, Vgs = Vds

gM Forward Transconductance 3.2 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.45 Ohm Vgs = 20V, Ids =12.00 A

Idsat Saturation Current 20.00 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 120.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 3.2 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 60.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
 LP702

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE

LP702 POUT VS PIN Freq= 500MHz, VDS=28V, Idq=.4A L1B 2DIE CAPACITANCE

50 17.00
1000
49 16.00

48 15.00

47 14.00 Ciss
Pout
100
46 13.00
Efficiency = 60%
45 12.00
Coss
44 11.00
Gain
43 10.00 10
1dB compresion = 50W
42 9.00

41 8.00
Crss

40 7.00
1
39 6.00 0 5 10 15 20 25 30
23 25 27 29 31 33 35 37 39
VDS IN VOLTS
PIN IN dBm

IV CURVE ID & GM VS VGS

L1B 2 DIE ID, GM vs VG
L1B 2 DIE IV
100
20

18

16
ID
14
10
ID IN AMPS

12

10

6
GM
1
4

0
0 2 4 6 8 10 12 14 16 18 20
VDS IN VOLTS
0.1
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v 0 2 4 6 8 10 12 14
Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com