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L8711P

The L8711P is a silicon VDMOS and LDMOS transistor designed for broadband RF applications, suitable for military radios, cellular base stations, and more, offering 7.0 Watts output. It features low capacitances for high efficiency and linear performance, with a maximum junction temperature of 150°C and a drain efficiency of 50%. Key electrical characteristics include a drain breakdown voltage of 36V and a common source power gain of 10 dB at 500 MHz.

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ETIENNE ABOULAYE NDIAYE
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3 views5 pages

L8711P

The L8711P is a silicon VDMOS and LDMOS transistor designed for broadband RF applications, suitable for military radios, cellular base stations, and more, offering 7.0 Watts output. It features low capacitances for high efficiency and linear performance, with a maximum junction temperature of 150°C and a drain efficiency of 50%. Key electrical characteristics include a drain breakdown voltage of 36V and a common source power gain of 10 dB at 500 MHz.

Uploaded by

ETIENNE ABOULAYE NDIAYE
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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polyfet rf devices

L8711P

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 7.0 Watts Single Ended
Laser Driver and others.
TM Package Style S08 P
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
60 Watts 2.50 C/W 150 C -65 C to 150 C 8.0 A 36 V 36 V 20 V

RF CHARACTERISTICS ( 7.0 WATTS OUTPUT )


SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 10 dB Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
η Drain Efficiency 50 % Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )


SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 36 V Ids = 0.20 mA, Vgs = 0V

Idss Zero Bias Drain Current 2.0 mA Vds = 7.5 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.20 A, Vgs = Vds

gM Forward Transconductance 1.7 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.40 Ohm Vgs = 20V, Ids = 8.00 A

Idsat Saturation Current 13.00 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 50.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 2.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 40.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 03/13/2002


1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L8711P

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE


L8711P Pin vs Pout F=500 MHZ; L1C 1DIE CAPACITANCE
Idq=.4;Vds=7.5Vdc
10 15 1000

14
8

100
13 Ciss
Pout
6

12
Gain Coss
4
10
11
Crss
2
10
Efficiency@7W=50%
1
0 9
0 5 10 15 20 25 30
0 0.2 0.4 0.6 0.8 1
VDS IN VOLTS
Pin in watts

IV CURVE ID & GM VS VGS


L1C 1 DIE ID, GM vs VG
L1C 1 DIE IV 100
16

14

12

10 ID
ID IN AMPS

8
10
6

2
G
0 M
0 2 4 6 8 10 12 14 16 18 20
VDS IN VOLTS
1
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
0 2 4 Vgs
6 in Volts
8 10 12 14

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

03/13/2002

POLYFET RF DEVICES REVISION


1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
polyfet rf devices
L8711P

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 7.0 Watts Single Ended
Laser Driver and others.
TM Package Style S08 P
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
60 Watts 2.50 C/W 150 C -65 C to 150 C 8.0 A 36 V 36 V 20 V

RF CHARACTERISTICS ( 7.0 WATTS OUTPUT )


SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 10 dB Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
η Drain Efficiency 50 % Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )


SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 40 V Ids = 0.20 mA, Vgs = 0V

Idss Zero Bias Drain Current 2.0 mA Vds = 7.5 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.20 A, Vgs = Vds

gM Forward Transconductance 1.7 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.40 Ohm Vgs = 20V, Ids = 8.00 A

Idsat Saturation Current 13.00 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 50.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 2.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 40.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 12/12/2001


1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L8711P

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE


L8711P Pin vs Pout F=500 MHZ; L1C 1DIE CAPACITANCE
Idq=.4;Vds=7.5Vdc
10 15 1000

14
8

100
13 Ciss
Pout
6

12
Gain Coss
4
10
11
Crss
2
10
Efficiency@7W=50%
1
0 9
0 5 10 15 20 25 30
0 0.2 0.4 0.6 0.8 1
VDS IN VOLTS
Pin in watts

IV CURVE ID & GM VS VGS


L1C 1 DIE ID, GM vs VG
L1C 1 DIE IV 100
16

14

12

10 ID
ID IN AMPS

8
10
6

2
G
0 M
0 2 4 6 8 10 12 14 16 18 20
VDS IN VOLTS
1
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
0 2 4 Vgs
6 in Volts
8 10 12 14

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

12/12/2001

POLYFET RF DEVICES REVISION


1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L8711P

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE


L8711P Pin vs Pout F=500 MHZ; L1C 1DIE CAPACITANCE
Idq=.4;Vds=7.5Vdc
10 15 1000

14
8

100
13 Ciss
Pout
6

12
Gain Coss
4
10
11
Crss
2
10
Efficiency@7W=50%
1
0 9
0 5 10 15 20 25 30
0 0.2 0.4 0.6 0.8 1
VDS IN VOLTS
Pin in watts

IV CURVE ID & GM VS VGS


L1C 1 DIE ID, GM vs VG
L1C 1 DIE IV 100
16

14

12

10 ID
ID IN AMPS

8
10
6

2
G
0 M
0 2 4 6 8 10 12 14 16 18 20
VDS IN VOLTS
1
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
0 2 4 Vgs
6 in Volts
8 10 12 14

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

12/12/2001

POLYFET RF DEVICES REVISION


1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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