O P E R A T I N G M A N U A L

XTC/C

XTC/2

XTC/C XTC/2
Thin Film Deposition Controller
IPN 074-183
 O P E R A T I N G M A N U A L

XTC/C XTC/2
Thin Film Deposition Controller
IPN 074-183X

TWO TECHNOLOGY PLACE A LT E L A N D S T R A S S E 6 BONNER STRASSE 498

EAST SYRACUSE, NY 13057-9714 USA LI-9496 BALZERS, LIECHTENSTEIN D-50968 COLOGNE, GERMANY

P h o n e : + 3 1 5 . 4 3 4 . 11 0 0 P h o n e : + 4 2 3 . 3 8 8 . 3 111 Phone: +49.221.347.40

Fax: +315.437.3803 Fax: +423.388.3700 Fax: +49.221.347.41429
Email: reachus@inficon.com Email: reach.liechtenstein@inficon.com Email: reach.germany@inficon.com

V I S I T U S O N T H E W E B AT w w w. i n f i c o n . c o m

©2001 INFICON 092304

Trademarks

The trademarks of the products mentioned in this manual are held by the companies that
produce them.

INFICON®, CrystalSix® are trademarks of INFICON Inc.

All other brand and product names are trademarks or registered trademarks of their respective companies.

The information contained in this manual is believed to be accurate and reliable. However, INFICON assumes
no responsibility for its use and shall not be liable for any special, incidental, or consequential damages related
to the use of this product.

©2001 All rights reserved.

Reproduction or adaptation of any part of this document without permission is unlawful.
 DECLARATION
OF
CONFORMITY

This is to certify that this equipment, designed and manufactured by:

INFICON Inc.
2 Technology Place
East Syracuse, NY 13057
USA

meets the essential safety requirements of the European Union and is placed on the
market accordingly. It has been constructed in accordance with good engineering
practice in safety matters in force in the Community and does not endanger the safety
of persons, domestic animals or property when properly installed and maintained and
used in applications for which it was made.

Equipment Description: XTC/2 and XTC/C Deposition Controllers, including _

the Oscillator Package and Crystal Sensor as properly
installed. ________

Applicable Directives: 73/23/EEC as amended by 93/68/EEC

89/336/EEC as amended by 93/68/EEC

Applicable Standards: EN 61010-1 : 1993, Fixed Equipment

EN 55011, Group 1, Class A : 1991
EN 50082-2 : 1995 ____ ______

CE Implementation Date: January 3, 1995

Revised to include EMC Directive: January 2, 1997

Authorized Representative: Gary W. Lewis

Vice President – Quality Assurance
INFICON Inc.

ANY QUESTIONS RELATIVE TO THIS DECLARATION OR TO THE SAFETY OF LEYBOLD INFICON'S PRODUCTS SHOULD
BE DIRECTED, IN WRITING, TO THE QUALITY ASSURANCE DEPARTMENT AT THE ABOVE ADDRESS.

04/15/97
Registration Card
Thank you for selecting INFICON® instrumentation.
Please fill out and return this postage paid card as soon as possible.
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Title
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Your help is very important in our continuing efforts to improve our manuals.
Using the table below, please circle the appropriate rank for each aspect.
In the Importance column, please indicate the importance of each aspect.
Manual Title
Part # (see Title Page) 074-

Importance
Very No Very (ranked from
Aspect Dissatisfied Satisfied 1 to 5, where
Dissatisfied Opinion Satisfied
1 is low and
5 is high)
Found everything
VD D NO S VS
I needed
Easy to read VD D NO S VS

Easy to use VD D NO S VS

Relevant to
VD D NO S VS
my work
Accurate
VD D NO S VS
information

Well-written VD D NO S VS

Well-organized VD D NO S VS

Technical Enough VD D NO S VS

Helped me
VD D NO S VS
solve problems

If you have additional comments, please contact INFICON.®

TWO TECHNOLOGY PLACE A LT E L A N D S T R A S S E 6 BONNER STRASSE 498

EAST SYRACUSE, NY 13057-9714 USA LI-9496 BALZERS, LIECHTENSTEIN D-50968 COLOGNE, GERMANY

P h o n e : + 3 1 5 . 4 3 4 . 11 0 0 P h o n e : + 4 2 3 . 3 8 8 . 3 111 Phone: +49.221.347.40

Fax: +315.437.3803 Fax: +423.388.3700 Fax: +49.221.347.41429
Email: reachus@inficon.com Email: reach.liechtenstein@inficon.com Email: reach.germany@inficon.com

V I S I T U S O N T H E W E B AT w w w. i n f i c o n . c o m
BUSINESS REPLY MAIL
FIRST CLASS PERMIT NO. 49 EAST SYRACUSE, NEW YORK

POSTAGE WILL BE PAID BY ADDRESSEE

INFICON INC.
Two Technology Place
East Syracuse, New York 13057-9714
Warranty
WARRANTY AND LIABILITY - LIMITATION: Seller warrants the products
manufactured by it, or by an affiliated company and sold by it, and described on
the reverse hereof, to be, for the period of warranty coverage specified below, free
from defects of materials or workmanship under normal proper use and service.
The period of warranty coverage is specified for the respective products in the
respective Seller instruction manuals for those products but shall in no event
exceed one (1) year from the date of shipment thereof by Seller. Seller's liability
under this warranty is limited to such of the above products or parts thereof as are
returned, transportation prepaid, to Seller's plant, not later than thirty (30) days
after the expiration of the period of warranty coverage in respect thereof and are
found by Seller's examination to have failed to function properly because of
defective workmanship or materials and not because of improper installation or
misuse and is limited to, at Seller's election, either (a) repairing and returning the
product or part thereof, or (b) furnishing a replacement product or part thereof,
transportation prepaid by Seller in either case. In the event Buyer discovers or
learns that a product does not conform to warranty, Buyer shall immediately notify
Seller in writing of such non-conformity, specifying in reasonable detail the nature
of such non-conformity. If Seller is not provided with such written notification,
Seller shall not be liable for any further damages which could have been avoided if
Seller had been provided with immediate written notification.
THIS WARRANTY IS MADE AND ACCEPTED IN LIEU OF ALL OTHER
WARRANTIES, EXPRESS OR IMPLIED, WHETHER OF MERCHANTABILITY OR
OF FITNESS FOR A PARTICULAR PURPOSE OR OTHERWISE, AS BUYER'S
EXCLUSIVE REMEDY FOR ANY DEFECTS IN THE PRODUCTS TO BE SOLD
HEREUNDER. All other obligations and liabilities of Seller, whether in contract or
tort (including negligence) or otherwise, are expressly EXCLUDED. In no event
shall Seller be liable for any costs, expenses or damages, whether direct or
indirect, special, incidental, consequential, or other, on any claim of any defective
product, in excess of the price paid by Buyer for the product plus return
transportation charges prepaid.
No warranty is made by Seller of any Seller product which has been installed,
used or operated contrary to Seller's written instruction manual or which has been
subjected to misuse, negligence or accident or has been repaired or altered by
anyone other than Seller or which has been used in a manner or for a purpose for
which the Seller product was not designed nor against any defects due to plans or
instructions supplied to Seller by or for Buyer.
This manual is intended for private use by INFICON® Inc. and its customers.
Contact INFICON before reproducing its contents.
NOTE: These instructions do not provide for every contingency that may arise in
connection with the installation, operation or maintenance of this equipment.
Should you require further assistance, please contact INFICON.

TWO TECHNOLOGY PLACE A LT E L A N D S T R A S S E 6 BONNER STRASSE 498

EAST SYRACUSE, NY 13057-9714 USA LI-9496 BALZERS, LIECHTENSTEIN D-50968 COLOGNE, GERMANY

P h o n e : + 3 1 5 . 4 3 4 . 11 0 0 P h o n e : + 4 2 3 . 3 8 8 . 3 111 Phone: +49.221.347.40

Fax: +315.437.3803 Fax: +423.388.3700 Fax: +49.221.347.41429
Email: reachus@inficon.com Email: reach.liechtenstein@inficon.com Email: reach.germany@inficon.com

V I S I T U S O N T H E W E B AT w w w. i n f i c o n . c o m
 XTC/C - XTC/2 Operating Manual

Table Of Contents

Chapter 1
Introduction and Specifications
1.1 Instrument Safety . . . . . . . . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-1
1.1.1 Notes, Cautions, Warnings . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-1
1.1.2 General Safety Information . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-2
1.1.3 Earth Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-3
1.1.4 Main Power Connection . . . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-4
1.2 Introduction to the Instrument . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-5
1.3 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-6
1.3.1 Specifications XTC/2 and XTC/C . . . . . . . . . . . . ... . . ....... . . . . . . 1-6
1.3.1.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . ....... . . . . . . 1-6
1.3.1.2 Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-6
1.3.1.3 Source Controls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-6
1.3.1.4 Input/Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7
1.3.1.5 Recorder Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7
1.3.1.6 Display . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7
1.3.1.7 Process Recipe Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7
1.3.1.8 Hardware interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8
1.3.1.9 Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8
1.3.2 Transducer Specifications (optional) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-9
1.3.3 XIU (Crystal Interface Unit) Specifications . . . . . . . . . . . . . . . . . . . . . . . 1-9
1.4 Guide to the Use of the Manual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-10
1.5 XTC/C Users and Installers Note. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-10
1.6 Related Manuals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-11
IPN 074-183X

1.7 How To Contact Customer Support . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-11

1.7.1 Application Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-11
1.7.2 Field Service and Repair Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-12
1.7.3 Returning Your Instrument . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-12

Chapter 2
Quick Use Guide
2.1 Unpacking, Initial Inspection and Inventory . . . . . . . . . . . . . . . . . . . . . . 2-1
2.1.1 Unpacking and Inspection Procedures . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
2.1.2 Inventory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
2.1.2.1 XTC/2 System Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-2
2.1.2.2 XTC/C System Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-2

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 XTC/C - XTC/2 Operating Manual

2.1.2.3 Ship Kit - XTC/2 XTC/C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

2.2 Voltage Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4
2.3 Installation Guide and Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-8
2.4 XTC/2 Front Panel Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10
2.4.1 XTC/2 Front Control Panel Description . . . . . . . . . . . . . . . . . . . . . . . . 2-10
2.4.2 XTC/2 Display Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-12
2.5 XTC/C Front Panel Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16
2.6 Rear Panel Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18
2.6.1 Power Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18
2.6.2 Configuration Switches 1 & 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-19
2.6.3 Grounding Stud . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22
2.6.4 System I/O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-23
2.6.5 AUX I/O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24
2.6.6 Sensor 1, Sensor 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-25
2.6.7 RS232 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-26
2.6.8 Communication Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-27
2.6.9 Source 1,2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-27
2.6.10 Manufacturer’s Identification and
Serial Number Plate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... 2-28
2.6.11 Recorder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... 2-28
2.7 Operation as a Deposition Monitor . . . . . . . . . . . . . . . . . . . . . . ..... 2-29
2.7.1 Monitoring - Systems Without a Source Shutter . . . . . . . . . . . . ..... 2-29
2.7.2 Monitoring - Systems with a Source Shutter . . . . . . . . . . . . . . . ..... 2-30
2.7.3 Rate Sampling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... 2-31
2.7.4 Nontraditional Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... 2-32
2.7.4.1 Etching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... 2-32
2.7.4.2 Immersion in Liquids . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-32

IPN 074-183X
2.7.4.3 Biological . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-32
2.7.4.4 Measurement of Liquids . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-33
2.8 Operation as a One Layer Controller . .... . . . ... . . . . . . . . . . . . . . 2-33
2.8.1 Skipping a State Overview . . . . . . . . . .... . . . ... . . . . . . . . . . . . . . 2-34
2.8.2 Idle State Processing Overview . . . . . .... . . . ... . . . . . . . . . . . . . . 2-34
2.8.3 Manual Power Overview. . . . . . . . . . . .... . . . ... . . . . . . . . . . . . . . 2-34
2.8.4 Time Power State Overview . . . . . . . . .... . . . ... . . . . . . . . . . . . . . 2-35
2.8.5 Controlling the Source Overview . . . . .... . . . ... . . . . . . . . . . . . . . 2-35
2.9 Operation as a Multi-Layer Controller . .... . . . ... . . . . . . . . . . . . . . 2-36
2.9.1 Defining a Process Overview . . . . . . . .... . . . ... . . . . . . . . . . . . . . 2-36

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 XTC/C - XTC/2 Operating Manual

Chapter 3
Installation
3.1 Installing the Instrument - Details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
3.1.1 Control Unit Installation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
3.2 Electrical Grounding and Shielding Requirements . . . . . . . . . . . . . . . . . 3-1
3.2.1 Verifying / Establishing Earth Ground . . . . . . . . . . . . . . . . . . . . . . . . . . 3-2
3.2.2 Connections to Earth Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-2
3.2.3 Minimizing Noise Pickup from External Cabling . . . . . . . . . . . . . . . . . . . 3-3
3.3 Connection to Rear Panel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
3.3.1 The BNC Connectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
3.3.2 The "D" Shell Connectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
3.4 Sensor Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-6
3.5 Guidelines for Transducer Installation . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7
3.5.1 Sensor Installation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7
3.5.2 CrystalSix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-10
3.5.3 Check List for Transducer Installation . . . . . . . . . . . . . . . . . . . . . . . . . 3-11
3.6 Use of the Test Mode (XTC/2 Only). . . . . . . . . . . . . . . . . . . . . . . . . . . 3-11
3.6.1 Operational Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-12
3.7 Input and Output Details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-15
3.7.1 Relays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-15
3.7.2 Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-18
3.7.3 Chart Recorder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-19
3.7.4 Source Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-20
3.8 Computer Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-20
3.8.1 Communications Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-20
3.8.1.1 IEEE Settings for a National Instruments IEEE-GPIB Board . . . . . . . . 3-21
3.8.2 Basic Command Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-22
IPN 074-183X

3.8.3 Service Requests and Message Available . . . . . . . . . . . . . . . . . . . . . . 3-24

3.8.4 Datalogging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-25
3.8.5 Computer Command Details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-26
3.8.5.1 Echo Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-26
3.8.5.2 Hello Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-26
3.8.5.3 Query Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-26
3.8.5.4 Update Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-28
3.8.5.5 Status Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-28
3.8.5.6 Remote Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-32
3.8.6 Examples of RS232 Programs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-34
3.8.6.1 Program Without Checksum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-34
3.8.6.2 Program With Checksum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-35

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 XTC/C - XTC/2 Operating Manual

3.8.6.3 Example of SEMI II Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-36

3.8.7 Example of IEEE488 Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-38
3.9 Co-Deposition (Two Unit Interconnection) . . . . . . . . . . . . . . . . . . . . . 3-39

Chapter 4
Programming System Operation Details
4.1 State and Measurement System Sequencing . . . . . . . ...... . . . . . . . 4-1
4.2 State Descriptions and Parameter Limits . . . . . . . . . . ...... . . . . . . . 4-6
4.3 Alarms and Stops . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . . 4-9
4.3.1 Alarms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . . 4-9
4.3.2 Stops . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . . 4-9
4.4 Recovering From "STOPS" . . . . . . . . . . . . . . . . . . . . ...... . . . . . . 4-10
4.5 Tuning the Control Loop . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . 4-11
4.5.1 Tuning a Fast Source . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . 4-11
4.5.2 Tuning a Slow Source . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . 4-12
4.5.3 Setting Maximum Power. . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . 4-14
4.6 Setting S&Q Parameters
(Soft Crystal Failures) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-14
4.6.1 Q-Factor (Quality) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-15
4.6.2 S-Factor (Stability) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-16
4.6.3 Determining Q and S Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-17
4.7 Rate Ramps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-19
4.7.1 Rate Ramp to Zero Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-19
4.8 Use of the Hand Controller (Option) . . . . . . . . . . . . . . . . . . . . . . . . . . 4-19
4.9 Setting the Soak and Idle Power Levels . . . . . . . . . . . . . . . . . . . . . . . 4-20
4.9.1 Setting Soak Power 1 Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-20
4.9.2 Setting Soak Power 2 Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-20
4.9.3 Setting Idle Power Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-21

IPN 074-183X
4.10 Implementing RateWatcher . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-21
4.11 Crystal Fail . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-22
4.12 Completing on TIME-POWER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-22
4.13 Crystal Fail Inhibit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-23
4.14 Shutter Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-23
4.15 Crystal Switch Details. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-24
4.15.1 Sensor Shutter / CrystalSwitch Output . . . . . . . . . . . . . . . . . . . . . . . . 4-25
4.16 Start Layer Without
Backup Crystal Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-26
4.17 Crystal Life and Starting Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 4-27

TOC - 4
 XTC/C - XTC/2 Operating Manual

Chapter 5
Calibration and Measurement
5.1 Importance of Density, Tooling and Z-ratio . . . . . . . . . . . . . . . . . . . . . . 5-1
5.2 Determining Density . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1
5.3 Determining Tooling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-2
5.4 Laboratory Determination of Z-ratio . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3
5.5 Measurement Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4
5.5.1 Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4
5.5.2 Monitor Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-5
5.5.3 Period Measurement Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-7
5.5.4 Z-Match Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8
5.5.5 Active Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-9
5.5.6 ModeLock Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-11
5.6 Control Loop Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12

Chapter 6
Adjustments and Problems
6.1 LCD Contrast Adjustment (XTC/2 only) . . . . . . . . . . . . . . . . . . . . . . . . . 6-1
6.2 Error Messages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-1
6.2.1 Powerup Errors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-1
6.2.2 Parameter Update Errors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-2
6.2.3 Other Errors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-2
6.3 Troubleshooting Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-2
6.3.1 Major Instrument Components, Assemblies
and Mating Connectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3
6.3.2 Troubleshooting the Instrument . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-4
6.3.3 Troubleshooting Transducers/Sensors . . . . . . . . . . . . . . . . . . . . . . . . . 6-6
6.3.4 Troubleshooting Computer Communications . . . . . . . . . . . . . . . . . . . . 6-10
IPN 074-183X

6.3.5 Leaf Spring Concerns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-12

6.4 Replacing the Crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13
6.4.1 Standard and Compact . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13
6.4.2 Shuttered and Dual Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-14
6.4.3 Bakeable Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-15
6.4.4 Sputtering Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-16
6.4.5 Crystal Snatcher . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-17
6.4.6 CrystalSix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-17
6.5 Crystal Sensor Emulator IPN 760-601-G1 or 760-601-G2 . . . . . . . . . . 6-18
6.5.1 Diagnostic Procedures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-19
6.5.1.1 Measurement System Diagnostic Procedure . . . . . . . . . . . . . . . . . . . . 6-19
6.5.1.2 Feed-Through Or In-Vacuum Cable Diagnostic Procedure . . . . . . . . . 6-20

TOC - 5
 XTC/C - XTC/2 Operating Manual

6.5.1.3 Sensor Head Or Monitor Crystal Diagnostic Procedure . . . . . . . . . . . 6-21

6.5.1.4 System Diagnostics Pass But
Crystal Fail Message Remains . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-22
6.5.2 % XTAL Life . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-22
6.5.3 Sensor Cover Connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-23
6.5.3.1 Compatible Sensor Heads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-23
6.5.3.2 Incompatible Sensor Heads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-23
6.5.4 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-24

Appendix A
Table of Densities and Z-ratios

Index

IPN 074-183X

TOC - 6
 XTC/C - XTC/2 Operating Manual

Chapter 1
Introduction and Specifications

1.1 Instrument Safety

1.1.1 Notes, Cautions, Warnings
When using this manual, please pay attention to the NOTES, CAUTIONS and
WARNINGS found throughout. For the purposes of this manual they are
defined as follows:
NOTE: Pertinent information that is useful in achieving maximum instrument
efficiency when followed.

CAUTION

Failure to heed these messages could result in damage

to the instrument.

WARNING

Failure to heed could result in personal injury.

WARNING

Dangerous voltages are present. Failure to heed could

result in personal injury.
IPN 074-183X

1-1
 XTC/C - XTC/2 Operating Manual

1.1.2 General Safety Information

WARNING

This product is not for use in a manner not specified by

the manufacturer.

There are no user serviceable components within the

instrument case.

Potentially lethal voltages are present when the line

cord, system I/O or aux I/O are connected.

Refer all maintenance to qualified personnel.

CAUTION

This instrument contains delicate circuitry which is

susceptible to transient power line voltages.
Disconnect the line cord whenever making any
interface connections. Refer all maintenance to
qualified personnel.

IPN 074-183X

1-2
 XTC/C - XTC/2 Operating Manual

1.1.3 Earth Ground

This instrument is connected to earth via a sealed three-core (three-conductor)
power cable, which must be plugged into a socket outlet with a protective earth
terminal. Extension cables must always have three conductors, including a
protective earth conductor.

WARNING

Never interrupt the protective earth circuit.

Any interruption of the protective earth connection

inside or outside the instrument, or disconnection of
the protective earth terminal is likely to make the
instrument dangerous.

This symbol indicates where the protective earth

ground is connected inside the instrument. Never
unscrew or loosen this connection.
IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

1.1.4 Main Power Connection

WARNING

This instrument has line voltage present on the

primary circuits whenever it is plugged into a main
power source.

Never remove the covers from the instrument during

normal operation.

There are no operator serviceable items within this

instrument.

Removal of the top or bottom covers must be done

only by a technically qualified person.

If this instrument is installed into a rack system which

contains a mains switch, this switch must break both
sides of the line when it is open and it must not
disconnect the safety ground. This configuration is
required in order to comply with accepted European
safety standards.

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

1.2 Introduction to the Instrument

The XTC/2 and XTC/C are quartz crystal transducer type deposition process
controllers with three layer capability. They are readily connected to interact
with and control the other instruments associated with a vacuum coating plant
of moderate complexity. These instruments incorporate the patented (US
#5,117,192—May 27, 1992) ModeLock measurement system. This innovative
system provides process security, measurement speed and precision at a level
that no active oscillator based instrument can provide.
The bright Liquid Crystal Display of the XTC/2 is easily read and keeps the
operator continuously informed with pertinent deposition data including rate,
thickness, phase, rate deviation and elapsed time. Special messages such as
Stop, Crystal Fail or Time-Power are clearly presented to reduce operator
uncertainty and eliminate the possibility of costly mistakes.
The XTC/C is a variant of the XTC/2 that has a limited front panel. Instead of
an LCD display, it has 8 LED type status indicators that indicate process status
and instrument functional status. It is primarily designed for use in vacuum
coating plants that have a computer based central controller. The original
equipment manufacturer (OEM) will design a custom user input-output system
through his system controller. Once programmed and started, the XTC/C will
essentially run as independent of the central controller as is desired. The
deposition layer can complete without further intervention, freeing the central
controller for other tasks. Status and data may be queried as frequently as is
desired, however.
Interaction with the coating system for both units is multifaceted. All units come
with RS232 and support data rates to 9600 baud. The SECSII protocol is
supported. The optional computer interface is IEEE-488. The instrument is
configured to sequentially control two separate deposition sources with 15 bit
resolution using either PID or integrating type controller algorithms. Twelve
relays are used to manipulate various external devices such as source and
IPN 074-183X

sensor shutters, heaters or valves. Lower power outputs are used to control the
position of multi-hearth crucibles. There are eight input lines to provide the
ability to sense and react to discrete external signals.
There are numerous special control functions for accommodating the needs of
the deposition process. Full predeposit processing is provided, including
shutter delay which allows the establishment of the desired rate prior to opening
the substrate shutter. A Rate Ramp allows the deposition rate to be changed
during the deposit phase. The RateWatcher feature allows the deposition
stream to be periodically sampled, extending the life of the crystal.
These instruments are fully compatible with the complete family of INFICON
transducers, including Dual and CrystalSix®.

1-5
 XTC/C - XTC/2 Operating Manual

1.3 Specifications
At the time of this manual’s writing, the specifications for performance are as
published below. INFICON continuously improves its products, affecting the
instrument’s performance.

1.3.1 Specifications XTC/2 and XTC/C

1.3.1.1 General
Usage . . . . . . . . . . . . . . . . . . . . . . Indoor use only.
Altitude Range . . . . . . . . . . . . . . . . Up to 2000 m (6,561 ft)
Pollution Degree . . . . . . . . . . . . . . 1—No pollution occurs
Overvoltage Category . . . . . . . . . . 2—Local level, appliances, etc.
Cleaning . . . . . . . . . . . . . . . . . . . . The unit enclosure can be safely cleaned
with a mild detergent or spray cleaner
designed for that purpose. Care should be
taken to prevent any cleaner from entering
the unit.

1.3.1.2 Measurement
Crystal Range & Precision . . . . . . . 6.0 to 5.0 MHz +/- .05 Hz
(per 250 msec sample)
Thickness & Rate Resolution . . . . . 0.0617Å (per 250 msec sample)
Material density = 1.0; Z-Ratio = 1.0;
crystal frequency = 6 MHz.
Å/S/M = Angstroms/second/measurement.
Thickness accuracy . . . . . . . . . . . . 0.5%
Measurement frequency . . . . . . . . 4 Hz

IPN 074-183X
1.3.1.3 Source Controls
Source-Control Voltage . . . . . . . . . 0 to +/- 10 v
Number of Sources . . . . . . . . . . . . 2
Resolution . . . . . . . . . . . . . . . . . . . 15 bits over full range (10 v)
Update Rate . . . . . . . . . . . . . . . . . 4 Hz max.
Maximum Load . . . . . . . . . . . . . . . 400 Ohm (100 Ohm internal impedance)

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 XTC/C - XTC/2 Operating Manual

1.3.1.4 Input/Output
Inputs . . . . . . . . . . . . . . . . . . . . . . 9 TTL inputs
Outputs
a) relay . . . . . . . . . . . . . . . . . . 12 SPST 2.5-amp relays rated
@ 30 V(dc) / 30 V(ac) / 42 V(peak) max.
b) crucible select . . . . . . . . . . . 8 open collector
(5 volt DC max sink, 5 TTL loads)
Scan/Change Rate . . . . . . . . . . . . 4 Hz

1.3.1.5 Recorder Output

Voltage . . . . . . . . . . . . . . . . . . . . . 0 to +10 v
Resolution . . . . . . . . . . . . . . . . . . 13 bits over full range
(one reserved for sign)
Update Rate . . . . . . . . . . . . . . . . . 4 Hz
Function . . . . . . . . . . . . . . . . . . . . Rate / Thickness / Mass
Maximum Load . . . . . . . . . . . . . . . 2.0 KOhm (100 Ohm internal impedance)

1.3.1.6 Display
Applies to XTC/2 only; the XTC/C provides LED annunciators.
Type . . . . . . . . . . . . . . . . . . . . . . . 4x multiplexed custom LCD with backlight.
If desired, backlight automatically dims
during prolonged period of inactivity,
automatically brightening when activity
begins.
Thickness Resolution . . . . . . . . . . 1 Å
Rate Resolution . . . . . . . . . . . . . . .1 Å for 1 to 99.9 Å/sec
1 Å for 100 to 999 Å/sec
IPN 074-183X

Update Rate . . . . . . . . . . . . . . . . . 1 Hz

1.3.1.7 Process Recipe Storage

Film Programs . . . . . . . . . . . . . . . 9, 30 variables per program
Process layers . . . . . . . . . . . . . . . 3

1-7
 XTC/C - XTC/2 Operating Manual

1.3.1.8 Hardware interface

Sensors
Single . . . . . . . . . . . . . . . . . . . . 2
Dual . . . . . . . . . . . . . . . . . . . . . 1
CrystalSix . . . . . . . . . . . . . . . . . 2
Sources . . . . . . . . . . . . . . . . . . . . . 2 BNC female
Crucible Locations . . . . . . . . . . . . . 8, 1 of 8 and BCD encoded
I/O
Standard (inputs/outputs) . . . . . 8/12
Optional . . . . . . . . . . . . . . . . . . None
Communications
Standard. . . . . . . . . . . . . . . . . . RS232C
Optional . . . . . . . . . . . . . . . . . . IEEE
Chart Recorder . . . . . . . . . . . . . . . 1 BNC female

1.3.1.9 Operation
Power Requirements
"115 V" input range. . . . . . . . . . 90 to 132 V(ac), 49 to 61 Hz, 45 VA max.
fused at 3/8 Amp Type T fuse
"230 V" input range . . . . . . . . . 180 to 264 V(ac), 49 to 61 Hz, 45 VA max.
fused at 3/16 Amp Type T fuse
Operating Temperature . . . . . . . . . 0 to 50 °C (32 to 122 °F)
Size . . . . . . . . . . . . . . . . . . . . . . . . 3.5" H x 8" W x 12" D
(89 mm x 203 mm x 305 mm)
Weight . . . . . . . . . . . . . . . . . . . . . . 6 lb. (2.7 kg)

IPN 074-183X

1-8
 XTC/C - XTC/2 Operating Manual

1.3.2 Transducer Specifications (optional)

Max. Bakeout Size (Max. Envelope) Water Tube & Body & Holder IPN
Temperature* Coax Length

CrystalSix Sensor 130 °C 3.5" dia. x 2.0" high 30" (762 mm) 304 SS (plate, 750-446-G1
(89 mm dia. x 51 mm high) holders, & mate-
rial shield)**

Standard Sensor 130 °C 1.063" x 1.33" x .69" high 30" (762 mm) 304 SS 750-211-G1
(27 mm dia. x 34 mm x 17.5 mm high)

Standard Sensor 130 °C 1.06" x 2.24" x .69" high 30" (762 mm) 304 SS 750-211-G2
with Shutter (27 mm dia. x 57 mm x 17.5 mm high)

Sputtering Sensor 105 °C 1.36" dia. x .47" high 30" (762 mm) Au-plated BeCu 007-031
(34.5 mm dia. x 11.8 mm high)

Compact Sensor 130 °C 1.11" x 1.06" x 1.06" high 30" (762 mm) 304 SS 750-213-G1
(28 mm x 27 mm x 27 mm high)

Compact Sensor 130 °C 2.08" x 1.62" x 1.83" high 30" (762 mm) 304 SS 750-213-G2
with Shutter (53 mm x 41 mm x 46 mm high)

UHV Bakeable 450 °C 1.35" x 1.38" x .94" high 12" (305 mm) 304 SS 007-219
Sensor (34 mm x 35 mm x 24 mm high) 20" (508 mm) 007-220
30" (762 mm) 007-221

UHV Bakeable 400 °C 1.46" x 1.37" x 1.21" high 12" (305 cm) 304 SS 750-012-G1
Sensor with Shutter (37 mm x 35 mm x 31 mm high) 20" (508 cm) 750-012-G2
30" (762 cm) 750-012-G3
Dual Sensor 130 °C 1.45" x 3.45" x 1.70" high 30" (762 mm) 304 SS 750-212-G2
(37 mm x 88 mm x 43 mm high)

Shutter Assembly 400 °C two models available N/A 300-series SS 750-210-G1

750-005-G1
(Sputtering)

*For Bake only; waterflow is required for actual deposition monitoring. These temperatures are conservative maximum
device temperatures, limited by the properties of Teflon (PTFE) at higher temperatures. In usage, the water cooling allows
operation in environments that are significantly elevated, without deleterious affects.
**Aluminum body for heat transfer.

1.3.3 XIU (Crystal Interface Unit) Specifications

IPN 074-183X

The XTC/2 Series instruments use a new type of "passive intelligent" oscillator.
It is available with cable lengths of 15’ (4.572 m), 30’ (9.144 m), 50’ (15.24 m),
and 100’ (30.28 m) as IPN 757-305-G15, G30, G50, or G100, respectively.
Conventional, active style oscillators do not work with these instruments.
In-vacuum cable lengths to a maximum of 2 m (6.6’) are supported with this new
technology.

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 XTC/C - XTC/2 Operating Manual

1.4 Guide to the Use of the Manual

This manual is configured to be used by both experienced and inexperienced
deposition process engineers. For those with significant experience, especially
on INFICON controllers, nearly all pertinent information is contained in Chapter
2, Quick Use Guide. Other sections contain the details that supplement the
information in the quick use section.
Every user should read the complete manual. It is strongly suggested that the
user or installer follow the following plan to gain the most information in the
shortest period of time.
Š Register the instrument to receive updates and important information from
the factory.
Š Read section 1.1.1, Notes, Cautions, Warnings, on page 1-1 to understand
the safety related issues.
Š Read Chapter 2, Quick Use Guide, to become familiar with the instrument’s
needs and capabilities. Use the other sections of the manual to supplement
areas where you do not feel you have an adequate understanding of the
material. Throughout Chapter 2 there will be frequent references to the
manual sections that provide more detailed information. The final sections
of the Chapter 2 build the understanding of the full use of the instrument in
a logical progression, as suggested in section 2.3 on page 2-8.

1.5 XTC/C Users and Installers Note

The XTC/C can do anything that an XTC/2 can do, but it must be controlled
through the computer interface. In order to install and use this instrument
effectively, all aspects of XTC/2 operation must be understood. Because of this
additional burden, it is probably not cost effective for an end-user of a single
unit to purchase and install the XTC/C version.

IPN 074-183X
WARNING

There are no user serviceable components within the

instrument case.

Potentially lethal voltages are present when the line

cord, System I/O or Aux I/O are connected.

Refer all maintenance to qualified personnel.

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 XTC/C - XTC/2 Operating Manual

1.6 Related Manuals

Transducers are covered under separate manuals.
IPN Transducer Type
074-154 . . . . . . Bakeable
074-155 . . . . . . CrystalSix
074-156 . . . . . . Single/Dual/Compact
074-157 . . . . . . Sputtering

1.7 How To Contact Customer Support

If you cannot find the answer to your question in this manual, please contact
one of the following Customer Support groups after deciding whether:
Š your difficulty is with how you are using the instrument—in this case, contact
Application Support.
or
Š your instrument needs repair—in this case, contact Field Service and
Repair Support.
When you contact Customer Support, please have this manual at hand, along
with the following information:
Š The serial number for your instrument.
Š A description of your problem.
Š An explanation of the corrective action that you may have already
attempted.
Š The exact wording of any error messages that you have received from the
IPN 074-183X

instrument.
Within the USA, you may reach Customer Support at the following phone
numbers. Please contact the location that is closest to you. If you are located
outside of the USA, please contact your sales office. A complete listing of
INFICON Worldwide Service Centers is available at www.inficon.com.

1.7.1 Application Support

Austin, TX . . . . . . .ph. 512-448-0488 . . . . . . . . . fax 512-448-0398
San Jose, CA . . . .ph. 408-361-1200 ext. 125 . . fax 408-362-1556
Syracuse, NY . . . .ph. 315-434-1128 . . . . . . . . . fax 315-437-3803
If you are located outside the USA, please contact your sales office. A complete
listing of INFICON Worldwide Service Centers is available at www.inficon.com.

1 - 11
 XTC/C - XTC/2 Operating Manual

1.7.2 Field Service and Repair Support

Austin, TX . . . . . . ph. 512-448-0488. . . . . . . . . . fax 512-448-0398
San Jose, CA. . . . ph. 408-361-1200 ext. 120 . . . fax 408-362-1556
Syracuse, NY. . . . ph. 315-434-1167 . . . . . . . . . . fax 315-434-2551
If you are located outside the USA, please contact your sales office. A complete
listing of INFICON Worldwide Service Centers is available at www.inficon.com.

1.7.3 Returning Your Instrument

Do not send your instrument without first speaking with a Customer Support
Representative.
You must obtain an RMA (Return Material Authorization) number from the
Customer Support Representative. If the delivery of a package without an RMA
number is attempted, INFICON will refuse the delivery and the package will be
returned to you.
If your instrument has been exposed to process materials, you will be required
to complete a Declaration Of Contamination form.

IPN 074-183X

1 - 12
 XTC/C - XTC/2 Operating Manual

Chapter 2
Quick Use Guide

2.1 Unpacking, Initial Inspection and Inventory

2.1.1 Unpacking and Inspection Procedures
1 If you haven’t removed the instrument from its shipping containers, do so
now.
2 Carefully examine the unit for damage that may have occurred during
shipping. This is especially important if you notice signs of obvious rough
handling on the outside of the cartons. Report any damage to the carrier and
to INFICON, immediately.
3 DO NOT discard any packing materials until you have taken inventory and
have verified proper instrument operation to your satisfaction. See section
2.2 on page 2-4 for voltage selection and section 3.6 on page 3-11 for test
mode operation.

2.1.2 Inventory
Make sure you have received all of the necessary equipment by checking the
contents of the shipping containers with the parts list below. INFICON ships
these products on a feature-option basis. Check your order for the part number
before comparing to the lists below.
IPN 074-183X

2-1
 XTC/C - XTC/2 Operating Manual

2.1.2.1 XTC/2 System Configuration

XTC/2 ---

BASIC CONFIGURATION IPN # CODE#

115V 50/60 Hz 757-500-G1 1
230V 50/60 Hz 757-500-G2 2
Computer Communications Module
None 757-211-G1 1
IEEE-488 Parallel 760-142-G1 2
Remote Module
None 0
Hand Controller 755-262-G1 1
Rack Mounting
None 0
1 Unit Mounting Kit 757-212-G1 1
2 Unit Mounting Kit 757-212-G2 2

2.1.2.2 XTC/C System Configuration

XTC/C ---

BASIC CONFIGURATION IPN # CODE#

115V 50/60 Hz 759-500-G1 1
230V 50/60 Hz 759-500-G2 2
Computer Communications Module
None 757-211-G1 1
IEEE-488 Parallel 760-142-G1 2
Remote Module
None 0

IPN 074-183X
Hand Controller 755-262-G1 1
Rack Mounting
None 0
1 Unit Mounting Kit 757-212-G1 1
2 Unit Mounting Kit 757-212-G2 2

2-2
 XTC/C - XTC/2 Operating Manual

2.1.2.3 Ship Kit - XTC/2 XTC/C

Both instruments are shipped with the following accessories. To find which
accessories were shipped with your unit look for the "X" which represents the
voltage of your particular instrument and follow that column.
Table 2-1 Accessories

Qty
G2 G1
Item (230V)(115V) IPN Number Part # and/or Description

01 - X 757-203-G1 Ship Kit - XTC/2 & XTC/C 115V

02 X - 757-203-G2 Ship Kit - XTC/2 & XTC/C 230V

03 - 1 068-0385 North American Power Cord, shielded

04 1 - 068-0390 European Power Cord, shielded

05 1 1 051-485 Conn 9 Pin Male D/Sub Sod. Cup

06 1 1 051-620 Cable Clamp 11.3015

07 2 2 051-483 Conn 25 Pin Female D/Sub Sod. Cup

08 2 2 051-619 Cable Clamp

09 - 1 062-011 3/8 Amp Fuse Type T

10 1 - 062-053 3/16 Amp Fuse Type T

11 4 4 070-811 8014 Bumpon Feet

In addition, you have already found a copy of this manual, IPN 074-183.
IPN 074-183X

2-3
 XTC/C - XTC/2 Operating Manual

2.2 Voltage Selection

Voltage selection is required only between low (nominal 100-120 V) and high
(nominal 200-240 V) ranges. There is no distinction between 50 and 60 Hz
supplies. Refer to section 1.3.1 on page 1-6 for specific power requirements.

CAUTION

Verify that the correct fuse is in place by visually

inspecting the fuse for the proper rating. Use of an
improperly sized fuse may create a safety hazard.

For 100-120 V(ac) operation use a 3/8 Amp Type T fuse.

For 200-240 V(ac) operation use a 3/16 Amp Type T fuse.

NOTE: These instruments are designed to operate between 90 V(ac) and

132 V(ac) on Low Range and between 180 V(ac) and 264 V(ac) on
High Range.

WARNING

This instrument has line voltage present on the

primary circuits whenever it is plugged into a main
power source.

Potentially lethal voltages are present when the line

cord, system I/O or aux I/O are connected.

This instrument must be disconnected from the main

IPN 074-183X
power source before inspecting or replacing the fuse.

2-4
 XTC/C - XTC/2 Operating Manual

To inspect the fuse, proceed as follows.

1 Pry open the power entry module cover. See Figure 2-1.
Figure 2-1 Opening the Power Entry Module Cover

2 Pry the fuse holder out of the housing. See Figure 2-2.
Figure 2-2 Removing the Fuse Holder
IPN 074-183X

2-5
 XTC/C - XTC/2 Operating Manual

3 Inspect the fuse. See Figure 2-3.

Figure 2-3 Clip, Fuse Holder, Fuse

Conversion Clip

Fuse
Holder

Fuse

The Corcom fuse holder has chambers for two 1/4" x 1 1/4" (5 mm x 20 mm)
fuses. Since only one fuse is used, that fuse must be on the live (hot) side and
a conversion clip is inserted to bridge the unused fuse chamber in the neutral
side.
An additional function of the conversion clip is to act as a polarization key to
assure that only the neutral line can be bridged leaving the live (hot) line always
fused. A special feature has been built into the live side of the fuse holder
compartment of the housing. It will interfere with the conversion clip and
therefore stop the fuse holder from being inserted fully into the housing if the

IPN 074-183X
clip is on the live side.
When the power entry module is flipped around for voltage changing, the
conversion clip must be re-installed to the other side. Otherwise, the fuse holder
will not seat completely into the housing and the power entry module will not
function.
The proper location of the conversion clip is at the left hand side of the voltage
number selected, that is, the upright voltage number. See Figure 2-4.

2-6
 XTC/C - XTC/2 Operating Manual

Figure 2-4 Proper Clip and Fuse Location

Once the fuse and clip have been configured, the fuse holder is inserted into
the power entry module housing with the fuse towards the bottom of the
instrument (and the clip towards the top) with the desired voltage showing
through the hole into the cover.
IPN 074-183X

2-7
 XTC/C - XTC/2 Operating Manual

2.3 Installation Guide and Schematic

Many experienced deposition monitor users will be able to fully install and use
the instrument by studying the installation schematic, Figure 2-5 on the next
page, and the State Sequence Diagrams, Figure 4-2 on page 4-2, Figure 4-3 on
page 4-3, Figure 4-4 on page 4-4, and Figure 4-5 on page 4-5.
A more systematic approach would be to start by reviewing the two figures and
then following the procedure below.

WARNING

Completely review section 1.1 on page 1-1 on safety.

All warnings in this section, as well as ones found in
other sections listed below, must be followed to ensure
the safety of the personnel operating this instrument.

1 Check for correct line voltage, section 2.2 on page 2-4.

2 Verify basic unit operation by exercising it in the Test Mode, section 3.6 on
page 3-11.

3 Review the system interface capability as outlined in section 2.6 on page

2-18. Be especially attentive of the special features available on the
configuration switches, section 2.6.2 on page 2-19

4 Wire the necessary connectors following the installation procedures in

sections section 3.1 on page 3-1, section 3.2 on page 3-1, and section 3.3
on page 3-4.

5 Review the front panel controls and display description per section 2.4 on

IPN 074-183X
page 2-10 for the XTC/2 or section 2.5 on page 2-16 for the XTC/C.

6 Program the desired film parameter values per section 4.1 on page 4-1 and
section 4.2 on page 4-6.

7 Verify the operation of the just programmed film utilizing the Test Mode.

8 Attach the XIU (757-305-G15, G30, or G100) to an existing transducer or

install a new transducer following the guidelines of section 3.5 on page 3-7
and Figure 3-3 on page 3-8.

9 Exit the Test Mode and deposit when ready.

2-8
 IPN 074-183X

From Local Line Power

L
T
X

A
100-120 V(ac) ±10%
200-240 V(ac) ±10%

INCR
50-60 Hz STOP

I
T
S

H
C
W
Standard Sensor with Shutter DECR
IPN 750-211-G2 [To front of instrument]
(Option) (Optional)
IPN 755-262-G1
Hand Held Manual
Power Controller

Optional
Chart
Recorder IEEE 757-211-G1
Option

Sensor Optional
Shutter Cajon
Coupling

Source to Sensor
10” Minimum
Pin # Description
1 Not used
Source Feed Thru 2 TXD Data transmitted from XTC
Shutter IPN 750-030-G1 3 RXD Data received by XTC
(Option) 4 Not used
5 GND Signal ground
Rotary 6 DTR Output from XTC indicating ready to transmit
Feed Thru 7 CTS Input to XTC indicating stop transmitting
8 Not used

(Oscillator Kit 757-305-GXX: option)

9 GND Shield ground

Compressed Pneumatic
Air Actuator
Source Controller
Earth
Such As Electron
Ground Outputs
Beam Gun
Power Supply 1,2 Thickness setpoint
3,4 Feedtime (SOAK 2)
Cooling 5,6 Crystal Fail
Actuator
Water 7,8 Alarms
Power Supply
Out 9,10 Source 1 / Source 2
IPN 007-199 XIU (Oscillator) 11,12 End Deposit
Shutter IPN 757-302-G1
Solenoid Assy. In Also Available Inputs
Air, 80 PSI, 110 PSI Max. Outputs Pin # Outputs Pin # 13 Input common (GND)
Source Shutter 2 3,4 14 Crucible valid
Sensor Shutter 1 5 Sensor Shutter 2 7,8 15,16,17 Input common (GND)
Stop 8,10
[N.O. Relay Contact]
XTC/C - XTC/2 Operating Manual

End Of Process 11,12 Open Collector Outputs

24 V(ac) or V(dc)
Power Supply Sensor Shutter 1 6 18 Crucible select 1
Inputs 19 Crucible select 2
Input Common 13,14,15,16,17 20 Crucible select 3
Start Deposition 18 21 Crucible select 4
Stop Deposition 19 22 Crucible select 5
End Deposit 20 23 Crucible select 6
Source Shutter 1 1 Sample Initiate 21 24 Crucible select 7
[N.O. Relay Contact] Sample Inhibit 22 25 Crucible select 8
Crystal Fail Inhibit 23
Source Shutter 1 2 Zero Thickness 24 NOTE: Crucible select is also BCD encoded
Soak 2 Hold 25 on sensor connector 1.

2-9
Figure 2-5 Installation Guide Schematic
 XTC/C - XTC/2 Operating Manual

2.4 XTC/2 Front Panel Description

The description of the XTC/2 front panel is divided into two sections, the display
area and the front control panel.
Figure 2-6 Front Panel XTC/2

1 2 3 4 5 6

7
8

18 17 16 15 14 13 12 11 10

2.4.1 XTC/2 Front Control Panel Description

1— LCD DISPLAY
Highly visible display of current information. See section 2.4.2 on page
2-12 for details.
2— LIFE
Pressing the 1 key momentarily switches the display to percent of crystal
life used, software version, crystal frequency, and S and Q values, when
the display is in the operate mode.
3— ZERO
Pressing the 2 key zeros the displayed thickness when the display is in the
operate mode.
4— XTSW

IPN 074-183X
Crystal Switch. Pressing the 3 key advances the CrystalSix to the next
available crystal or changes the active crystal of the dual head when the
display is in the operate mode. (See section 4.15.1 on page 4-25.)
5— MPWR
Manual. Pressing the 4 key places the unit in manual power control or rate
control mode when the display is in the operate mode.
6— START
Initiates action. (Starts State Sequencing, see Figure 4-2 on page 4-2 and
Figure 4-3 on page 4-3.)
7— STOP
Halts State Sequencing, see Figure 4-2 on page 4-2 and Figure 4-3 on
page 4-3.
8— PROG
Program. Toggles the display between the program and operate modes.

2 - 10
 XTC/C - XTC/2 Operating Manual

9— ON/STBY
Switches secondary power of the instrument between ON and STANDBY.

10—
Green LED indicates that the unit is connected to an active line power
source and the ON/STBY switch is set to ON.

11—
Access to adjust LCD contrast, see section 6.1 on page 6-1.

12—
Connection for optional manual power and crystal switch hand controller
(IPN 755-262-G1).

WARNING

This connector is not for telecommunications

equipment. Do not connect a phone to this connector.

13—
Enter and cursor down. Two function switch used when the display is in the
program mode. All numeric and "Y" "N" parameter entries need to be
followed by a . Also used to manually decrease source power when in
MPWR and the display is in the operate mode.
14— 0/N
Zero or no. Two function switch used when the display is in the program
mode. Also, places unit in communications set up mode if held down during
power up, see section 3.8.1 on page 3-20.
15— 9/Y
IPN 074-183X

Nine or yes. Two function switch used when display is in program mode.
16— /RESET
Clear and cursor up. Two function switch that is also used to "reset" the
instrument to the beginning of a process from a STOP state. Also used to
increase source power when in MPWR and the display is in the operate
mode.
17— DIGITS (0-9)
Decimal based key pad for data entry. If the nine key is held down during
power-up, all of the LCD segments will remain lit until the key is released,
see Figure 2-7 on page 2-12.
18—
Optional mounting kit, (IPN 757-212-G1) for mounting one unit in full rack
or (757-212-G2) for mounting two units side by side in full rack.

2 - 11
 XTC/C - XTC/2 Operating Manual

2.4.2 XTC/2 Display Description

Figure 2-7 XTC/2 Display
1 2 3 4

20
19 5
6
18 7
17
16
15 8
14

13 12 11 10 9

1— RATE DISPLAY GROUP

Indicates the deposition or etching rate in Å/sec or the version level of the
installed firmware when the LIFE key is pressed and display is in the
Operate mode. When the display is in the Program mode, it is used to
display and enter the values of parameters requiring three significant digits.
2— COMMUNICATIONS & TEST GROUP
A message area that:
a. Indicates that the I/O has been put into external communication control
through the R-15 through R-18 commands.
b. The instrument is in TEST mode, see section 3.6 on page 3-11.
c. The instrument is sending or receiving an external computer

IPN 074-183X
COMMunication command.
3— DEPOSITION (ETCH) RATE and THICKNESS SUBGROUP
Indicators and annunciators for parameter entry of starting DEPosition
RATE, film’s FINAL THicKness and an intermediate THicKness SetPoinT.
4— THICKNESS and FREQUENCY GROUP
Indicates the deposited (etched) thickness or the active crystal’s frequency
in KHz when the LIFE key is pressed when the display is in the operate
mode. When the display is in the Program mode it is used to display and
enter the values of parameters that require four significant digits.
5— RATEWATCHER SUBGROUP
Indicator annunciator and cursor array for the definition of the RateWatcher
parameters when the display is in the Program mode. Used as an indicator
of the SAMPLE and HOLD deposition substrates when the display is in the
Operate mode.

2 - 12
 XTC/C - XTC/2 Operating Manual

6— RATE DEVIATION GROUP

A graphic annunciator that displays the current deviation of the deposition
rate from the value of the active film’s DEP RATE parameter. This
annunciator structure is updated each 250ms measurement when the
display is in the Operate mode. A 0% deviation is indicated when the
computed value is less than +/-2%. The plus or minus 10% values are
indicated when the computed value is more than +/-10%, respectively.
7— ACTIVE CRYSTAL INDICATION GROUP
A graphic annunciator that provides information concerning the presently
active crystal or the availability of backup crystals. Its meaning is somewhat
altered by the instrument’s configuration regarding the crystal switch type,
see section 2.6.2 on page 2-19.
a. If the instrument is configured for "Single Heads", the annunciator will
indicate which sensor is active.
b. If the instrument is configured for "Dual Sensor Head", the annunciator
will display the number representing the active crystal’s "sensor
number." Whenever the instrument is operating with the secondary
(backup) crystal the number of the backup crystal will be flashing as an
indication of the lack of a subsequent backup crystal.
c. If the instrument is configured for one or two CrystalSix, the annunciator
will display the numbers of all crystals of the active sensor’s output that
are "good." The "active" crystal’s number will flash. The absence of all
numbers may also indicate that the switcher is not operating.
8— STATUS MESSAGE GROUP
A group of annunciators that provide information concerning the state of
the instrument.
a. READY — when illuminated the instrument will accept a start command
to begin state processing of the active layer.
b. STOP — when illuminated indicates that the instrument is in the STOP
state, see section 4.3 on page 4-9 and section 4.4 on page 4-10.
c. TIME PWR — when illuminated indicates that the instrument is in the
IPN 074-183X

Time-Power state. See section 4.12 on page 4-22.

d. CONTINUE — when illuminated the instrument will again execute state
processing of the active layer, allowing for any previously accumulated
material, when the START key is pressed. Pressing the RESET key prior
to the START key resets the process to layer 1; see section 4.4 on page
4-10.
e. MANUAL —when illuminated the instrument is in the manual power
control mode and the source’s power level is modified by either the
optional hand controller or the front panel keys (XTC/2 only).
f. XTAL FAIL — this indicator illuminates when the active crystal has
failed. In the case of instruments configured for dual or CrystalSix
operation it indicates that no further crystals are available.

2 - 13
 XTC/C - XTC/2 Operating Manual

9— POWER and PROCESS GROUP

Indicates the relative source power when the display is in the Operate
mode and displays the % xtal life when the LIFE key is pressed. When the
display is in the Program mode, these three digits are used for the entry of
some 3 digit film parameter values. It is also used to define the instrument’s
sequencing of multi-layers, see section 2.9 on page 2-36.
10— SENSOR and SOURCE SUBGROUP
The annunciators and cursors for the definition of a film’s:
a. SENSOR # — designates the active or primary (for dual head) sensor
as 1 or 2.
b. SOURCE # — designates the film’s active source control output
as 1 or 2.
c. CRUCIBLE # — designates the active film’s crucible pocket as 1-8,
corresponding to crucible select outputs 1-8. A value of 0 disables this
parameter and associated outputs; see section 2.6.5 on page 2-24.
11— CONTROL PARAMETER SUBGROUP
The annunciators and cursors for entering the values used in a film’s Rate
Control algorithm; see section 4.5 on page 4-11.
12— CRYSTAL and PROCESS SUBGROUP
When the display is in the Program mode:
a. the XTAL SWCH parameter’s values are entered for S & Q as labeled.
b. the "FILM #" parameter value defines the particular film’s (1-9) values
being programmed/displayed.
c. The "LYR #" defines the process layer to be assigned a film. This
parameter works with the power and process display group.
When the display is in the Operate mode:
a. "FILM #" parameter value defines the film being executed and the
"LAYER #" parameter value defines the layer being executed.
13— TIMER GROUP
When the display is in the Operate mode, serves as the elapsed time

IPN 074-183X
indicator and unit annunciator. Also displays S & Q values when the LIFE
key is pressed. The values in the S accumulator replace the time display
while the LIFE key is pressed. When the key is released the value of the Q
accumulator is shown for about 1 second. Used for entering and displaying
the value of time-based parameters when the display is in the Program
mode.
14— CALIBRATION SUBGROUP
Annunciators and cursors used when the display is in the Program mode.
Allows conversion of the crystal’s frequency shift to material thickness; see
section 5.1 on page 5-1 through section 5.4 on page 5-3.

2 - 14
 XTC/C - XTC/2 Operating Manual

15— CRYSTAL FAIL SUBGROUP

Annunciators and cursors used when the display is in the program mode to
determine tolerated levels of crystal performance and subsequent
instrument actions.
a. TIME PWR Y-N — defines the action taken when a crystal fails; see
section 4.11 on page 4-22.
b. XTAL SWCH S-Q — a two parameter data field used with the digits in
the crystal and process subgroup. These are used to set the level of soft
crystal failures tolerated; see section 4.6 on page 4-14.
16— POST DEPOSIT SUBGROUP
Annunciators and cursors used to define the source’s post deposition
power levels; see section 4.9.3 on page 4-21.
17— RATE RAMP SUBGROUP
Annunciators and cursors used to define a change in deposition rate during
the deposit state; see section 4.7 on page 4-19.
18— DEPOSIT STATE INDICATOR
Annunciator used to indicate that the instrument is executing the deposit
state of the active film; see section 4.1 on page 4-1.
19— PRE DEPOSIT SUBGROUP
Annunciators and cursors used to define the predeposition source
conditioning when the display is in the Program mode.
a. RISE TIME 1-2 — defines the length of the rise 1 (2) state.
b. SOAK PWR 1-2 — defines the power level(s) of the
soak 1 (2) state.
c. SOAK TIME 1-2 — defines the length of the soak 1 (2) state.
These parameters, together, define a two step source power profile with
linear changes in power between levels as shown graphically in Figure 2-8.
d. SHUTR DLY Y-N — executes (Y) or skips (N) the shutter delay phase;
see section 4.14 on page 4-23.
Figure 2-8 Source Power Level Profile
IPN 074-183X

2 - 15
 XTC/C - XTC/2 Operating Manual

20— PROGRAMMING and PHASE INDICATOR GROUP

Annunciators and cursors for navigating, displaying and changing a film’s
individual parameter values when the display is in the Program mode.

The annunciators are also used to indicate the current state of the film
being executed when the display is in the Operate mode.

2.5 XTC/C Front Panel Description

Figure 2-9 Front Panel XTC/C

12
1
2
3
4
11

5 6 7 8 9 10

1— READY
When the associated LED is illuminated the instrument is in the READY TO
START state.
2— PROCESSING
When the associated LED is illuminated the instrument is state executing
a layer. See Figure 4-2 on page 4-2.
3— STOP
When the associated LED is illuminated the instrument is in the STOP
state.
4— XTAL FAIL

IPN 074-183X
When the associated LED is illuminated the measurement crystal has
failed. In the case of units configured for dual or CrystalSix operation it
indicates that there are no further crystals available.
5— RECEIVE
When the associated LED is illuminated the instrument is receiving
information from the connected computer controller.
6— SEND
When the associated LED is illuminated the instrument is sending
information to the connected computer controller.
7— CPU
When the associated LED is illuminated the instrument’s computer is not
operating normally.

2 - 16
 XTC/C - XTC/2 Operating Manual

8— MANUAL
When the associated LED is illuminated the instrument is capable of
responding to power changes as directed by the optional manual power
controller.

9—
Connection for optional manual power and crystal switch hand controller
(IPN 755-262-G1).

10—
Green LED indicates that the unit is connected to an active line power
source and the ON/STBY switch is set to ON.
11— ON/STBY
Switches secondary power of the instrument between ON and STANDBY.
12—
Optional mounting kit for mounting one instrument in full rack (IPN
757-212-G1) or for mounting two units side by side in full rack (IPN
757-212-G2).
IPN 074-183X

2 - 17
 XTC/C - XTC/2 Operating Manual

2.6 Rear Panel Description

The rear panel provides the interface for all external connections to the
instrument.
Figure 2-10 Rear Panel

1 11 10 9 8

3 7

4 5 6

2.6.1 Power Module

Allows selection of optional voltages, contains the instrument fuse and provides
modular connection to line power. Refer to section 2.2 on page 2-4.
Figure 2-11 Power Module

IPN 074-183X

2 - 18
 XTC/C - XTC/2 Operating Manual

2.6.2 Configuration Switches 1 & 2

Two eight position DIP switches used to customize the instrument as follows.
Figure 2-12 Configuration Switch

CAUTION

The configuration switches are only read on

instrument power up. If an option is changed, the
instrument must be switched to standby and then
powered up.
IPN 074-183X

2 - 19
 XTC/C - XTC/2 Operating Manual

Table 2-2 Configuration Switch Settings

XTC/2 XTC/C

Switch 1 Test Mode (0 = off, 1 = on) Communications (24)

Address

Switch 2 Parameter Lock (0 = off, 1 = on) Communications (23)

Address

Switch 3 Control Mode (0 = deposit, 1 = etch) Communications (22)

Address

Switch 4 Stop On Alarms (0 = no, 1 = yes) Communications (21)

Address

Switch 5 Stop on Max Power (0 = no, 1 = yes) Communications (20)

Address

XTC/C Switches 1-5 are only used for the optional IEEE488 (IPN 760-142-G1 or 757-122-G1).
[Addresses 0 to 30 are allowed.]

Switch 6 Recorder Type MSB Communications Protocol

0 = INFICON, 1 = SECS

Switch 7 Recorder Type Baud Rate MSB

Switch 8 Recorder Type LSB Baud Rate LSB

NOTE: for the XTC/2

000 designates Rate, 100 Å/s full scale (unfiltered)
001 designates Rate, 1000 Å/s full scale (unfiltered
010 designates Thickness, 100 Å full scale
011 designates, 1000 Å full scale
100 designates Power %
101 designates Rate Deviation (±50 Å/s)
110 designates Rate 100 Å/s full scale - smoothed
111 designates Rate 1000 Å/s full scale - smoothed

IPN 074-183X
NOTE: for the XTC/C
00 is 9600 baud
01 is 4800 baud
10 is 2400 baud
11 is 1200 baud

Switch 9 Beep On/Off (0=on, 1=off) Checksum (0 = no, 1 = yes)

Switch 10 Backlight Dim (0 = no, 1 = yes) Unused

Switch 11 Start Layer without (0 = no, 1 = yes) Start Layer 0 = no, 1 = yes)
backup crystal without backup
crystal

NOTE: See section 4.16 on page 4-26 for description

2 - 20
 XTC/C - XTC/2 Operating Manual

Table 2-2 Configuration Switch Settings

XTC/2 XTC/C

Switch 12 Input Option Unused

0 = standard
1 = film select

Switch 13 Relay Option

1 = on 1 = on
Relay 7 = End of Film Relay 7 = End of Film
Relay 10 = In Process Relay 10 = In Process

0 = off 0 = off
Relay 7 = Thickness Setpoint Relay 7 = Thickness Setpoint
Relay 10 = Alarms Relay 10 = Alarms

Switch 14 Crystal Switch Type MSB Crystal Switch Type MSB

Switch 15 Crystal Switch Type LSB Crystal Switch Type LSB

NOTE:
00 designates single head(s)
01 designates one dual head
10 designates one CrystalSix, on SENSOR 1
11 designates two CrystalSixs

Switch 16 Source Control Source Control

Voltage polarity 0 = neg, 1 = pos Voltage polarity 0 = neg, 1 = pos
IPN 074-183X

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2.6.3 Grounding Stud

Recommended point for connecting the system ground strap. For specific
recommendations see 3.2, Electrical Grounding and Shielding Requirements.
Figure 2-13 Grounding Stud

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

2.6.4 System I/O

A 25-pin male "D" type connector for interface connection. (See Figure 2-14 on
page 2-24 and section 3.7 on page 3-15 for details.)

Pin # Function
Relay# Outputs
1 1,2 Source Shutter 1
2 3,4 Source Shutter 2
3 5,6 Sensor Shutter 1*
4 7,8 Sensor Shutter 2*
5 9,10 STOP
6 11,12 End of Process
*Also used for crystal switch, see section 4.15.1 on page 4-25
Input # Inputs
13,14,15,16,17 INPUT Common (GND)
1 18 START deposition
2 19 STOP deposition
3 20 END deposit
4 21 Sample initiate
5 22 Sample inhibit
6 23 Crystal fail inhibit
7 24 ZERO thickness
8 25 Soak 2 HOLD
IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

2.6.5 AUX I/O

A 25-pin male "D" type connector for interface connection, see Figure 2-14 on
page 2-24 and section 3.7 on page 3-15.
Figure 2-14 25-Pin Type "D" Male Connector

Pin # Function
Relay # Outputs (Relays)
7 1,2 Thickness setpoint/End of Film*
8 3,4 Feedtime (SOAK 2)
9 5,6 Crystal fail
10 7,8 Alarms/In Process*
11 9,10 Source 1/Source 2 toggle (closed
when source 2 is active)
12 11,12 End Deposit
Input# Inputs
13 Input common (GND)
9 14 Crucible valid
15,16,17 Input common (GND)
TTL Output # Outputs (Open Collector 1 of 8 encoding)**
1 18 Crucible select 1
2 19 Crucible select 2
3 20 Crucible select 3
4 21 Crucible select 4

IPN 074-183X
5 22 Crucible select 5
6 23 Crucible select 6
7 24 Crucible select 7
8 25 Crucible select 8
*NOTE: See description of configuration switch 13,
section 2.6.2 on page 2-19.
**NOTE: The crucible select outputs are available BCD encoded on the
Sensor 1 connector, see section 2.6.6 on page 2-25.

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 XTC/C - XTC/2 Operating Manual

2.6.6 Sensor 1, Sensor 2

High density 15-pin female "D" type. Input connectors for intelligent oscillators
1, 2 (IPN 757-302 G1). These oscillators are normally supplied with 15 foot (4.5
meter) cables as IPN 757-305-G15. These are specifiable as 30 foot and 100
foot by changing the group (G-xx) designation to 30 or 100, respectively. The
crucible select outputs are open collector BCD encoded only on Sensor 1.
Figure 2-15 15-Pin Type "D" Female Connector

Pin # Description
11 Crucible Select (LSB)
12 Crucible Select BCD encoding
13 Crucible Select (MSB)
14 Ground
15 Ground

CAUTION

Only connect to pins 11-15, inclusive. Ignoring this

warning will effect crystal and instrument
performance.

Be sure to follow the best wiring and grounding

IPN 074-183X

practice possible see section 3.2.3 on page 3-3.

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 XTC/C - XTC/2 Operating Manual

2.6.7 RS232
A 9-pin female "D" type connector which enables the instrument to be controlled
by a host computer.
Figure 2-16 9-Pin Type "D" Female Connector

Pin # Description DB9* DB25**

1 Not used 1 -
2 TXD Data transmitted from XTC2 2 3
3 RXD Data received by XTC3 3 2
4 Not used 4 -
5 GND Signal ground 5 7
6 DTR Output from XTC indicating ready to transmit 6 6
7 CTS Input to XTC indicating stop transmitting 7 4
8 Not used 8 -
9 GND Shield ground 9 -
*Host **IBM compatible computer connector

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

2.6.8 Communication Option

Location of optional computer interface.
Figure 2-17 IEEE488 Option

2.6.9 Source 1,2

BNC type female connectors that supply control voltage to the designated
evaporation source power supplies. The output voltage is selected as either
plus or minus with respect to the shield by a Configuration Switch. Refer to
section 2.6.2 on page 2-19.
Figure 2-18 BNC Connector
IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

2.6.10 Manufacturer’s Identification and

Serial Number Plate
This plate is installed at final assembly to identify the instrument’s model and
serial numbers.
Figure 2-19 Serial Number Plate

2.6.11 Recorder
A BNC type female connector that supplies analog voltage proportional to rate,
thickness, power or rate deviation. The function is determined by configuration
switches. Refer to section 2.6.2 on page 2-19. See the Remote Command
description in section 3.8.5.6 on page 3-32 for how to choose this function via
the remote communications when using an XTC/C.
Figure 2-20 BNC Connector

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

2.7 Operation as a Deposition Monitor

Although this instrument is designed as a multi-layer process controller, it is
also easily used as a rate and thickness deposition monitor. In addition, it is
easily used for many other types of mass measurement applications.
The following discussion is divided into four segments. The first is for
applications that do not require a source shutter. The second relates to those
that use a source shutter. The third section is a simple application of the
instrument for manual rate sampling. The fourth segment is directed towards
those applications that are nontraditional; including biological, electroplating,
etching and the measurement of liquid samples.

2.7.1 Monitoring - Systems Without a Source Shutter

To operate the instrument as a film rate/thickness monitor only the following
three parameters need to be programmed. Press the PROG key to place the
display in the program mode and enter the appropriate values for:
DENSITY . . . . . . . . . . . . . . . . . . . Depends on the material to be measured,
see Appendix A, Table of Densities and
Z-ratios.
Z-RATIO . . . . . . . . . . . . . . . . . . . . Depends on the material to be measured,
see Appendix A, Table of Densities and
Z-ratios.
TOOLING 1,2 . . . . . . . . . . . . . . . . Corrects for the geometrical differences
between the sensor and the substrate, see
section 5.3 on page 5-2. TOOLING 2 is
used for the backup sensor when a dual
head is used.
Properly mount and attach the appropriate transducer (see section 3.5 on page
IPN 074-183X

3-7).
Set the rear panel configuration switches for the appropriate transducer type;
refer to section 2.6.2 on page 2-19.
Press the PROG key to change the display between the program and operate
modes.
A STOP is cleared by pressing the START or RESET switch. RESET starts the
process over (i.e., at the beginning of Layer 1).
Pressing the ZERO key at any time sets the displayed thickness to 000.0 KÅ.
The Rate display group will indicate the evaporation rate and the Thickness
display group will increment accordingly. The front panel controls work
normally.

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 XTC/C - XTC/2 Operating Manual

2.7.2 Monitoring - Systems with a Source Shutter

In addition to measuring rate and thickness, these instruments can be used to
terminate the deposition at the proper thickness. Implementation requires that
the deposition system have a source (or substrate) shutter capable of automatic
operation. The source shutter controller must be wired through the SYSTEM I/O
connector on the rear panel of the instrument. The following parameters (in
addition to those required in the section above) must also be programmed.
DEP RATE. . . . . . . . . . . . . . . . . . . Program to 0.1 Å/sec.
NOTE: Programming the DEP RATE to
0.0 Å/sec skips the Deposit state.
FINAL THK . . . . . . . . . . . . . . . . . . Program to the desired film thickness.
In addition set all of the pre and post deposition parameters to zero (see
Chapter 4, Programming System Operation Details).
The operator manually increases the source power (using the source power
supply’s control) to the nominal operating level. Once the user is satisfied, the
deposition begins when the START switch is pressed. This action zeros the
accumulated thickness display and opens the source shutter. The operator
must then adjust the source power manually to achieve the desired rate. The
shutter will close automatically when the final thickness set point is achieved.

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

2.7.3 Rate Sampling

It is possible to use these instruments to periodically sample the rate in a
deposition system. A shuttered transducer must be used, see section 3.4 on
page 3-6.
NOTE: It will be useful to refer to the separate INFICON Crystal Sensor Manual
(see list below) for transducer and actuator control valve installation.
IPN Type
074-154 . . . . . . Bakeable
074-155 . . . . . . CrystalSix
074-156 . . . . . . Standard, Compact and Dual
074-157 . . . . . . Sputtering
1 Electrically connect the pneumatic shutter actuator control valve (IPN
007-199) to the sensor shutter pins of the SYSTEM I/O connector.

CAUTION

Verify proper electrical connection, do not confuse the

source shutter relay with the sensor shutter relay.

2 Program the DEP RATE parameter to 0.1 Å/sec.

NOTE: Programming the DEP RATE to 0.0 Å/sec skips the Deposit state.
3 Program the FINAL THK parameter to a value which allows approximately
20 seconds of material accumulation onto the sensor head. For example, if
the nominal rate is 20 Å/sec, set the final thickness to 20 sec x 20 Å/sec =
400Å. If the sample time is too short there could be errors induced by
temperature transients across the monitor crystal.
IPN 074-183X

A sample is initiated by pressing START (from the READY mode). This zeros
the displayed thickness and opens the sensor shutter. The operator may view
the deposition rate display (allowing it to stabilize) and then comparing it to the
desired rate. If a time longer than the programmed sample time is required to
adjust the actual deposition rate the operator can press the MPWR key. Once
the adjustments are completed, again pressing the MPWR key closes the
shutter.

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 XTC/C - XTC/2 Operating Manual

2.7.4 Nontraditional Applications

In addition to their normal application as a deposition monitor/controller, quartz
crystal microbalances have significant utility as generalized mass sensors. This
particular instrument family is capable of measuring mass increases or
decreases on the face of the monitor crystal to an accuracy of +/- 0.617
nanograms/cm2 (density = 1.00, z = 1.00). As always, it is imperative that the
mass be well adhered to the face of the crystal or improper readings will be
taken. It is especially important to recognize this requirement for measurements
of liquids or other non-rigid materials. INFICON’s 6MHz crystal holders have an
open area of ~0.535 cm2. For the highest accuracy possible, it is suggested that
the individual crystal holder be measured with a traveling microscope to
determine the exact opening area.

2.7.4.1 Etching
The instrument may be configured to display the thickness or mass removed
from the face of a crystal. It is imperative that the material be removed uniformly
over the active area of the crystal or improper readings will be taken. This
inaccuracy occurs because of radial mass sensitivity differences across the
face of the monitor crystal.
The etch mode is established by setting a configuration switch (refer to section
2.6.2 on page 2-19) on the back of the instrument.
The unit is operated normally, with the ZERO or START keys used to zero the
displayed thickness. The FINAL THK parameter may be programmed to
terminate the process.

2.7.4.2 Immersion in Liquids

Measurement of mass change in liquids is a relatively new field, consequently
application information is limited. The energy loss from the vibrating crystal into
the liquid environment is high, limiting the accuracy of the measurement in

IPN 074-183X
some cases. The ModeLock oscillator again provides superior performance,
allowing operation in liquids of higher viscosity than an active oscillator system
would provide. The presence of bubbles on the face of the crystal as it is
immersed will drastically change the noted frequency shift and alter the
sensitivity of the technique from immersion to immersion.
NOTE: It is not recommended to use standard INFICON sensors in liquids
without modification.

2.7.4.3 Biological
The measurement of biological specimens is subject to many of the same
problems as covered in the measurement of liquids.

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 XTC/C - XTC/2 Operating Manual

2.7.4.4 Measurement of Liquids

The measurement of the mass of a liquid on the face of a crystal is a technique
that is subject to very large errors. The two primary problems with liquids are
that they are not infinitely rigid structures and do not necessarily form in uniform
layers. Because liquids do not oscillate as a rigid solid, not all of the mass
participates in the resonance. Consequently, not all of the liquid is detected. In
some ways, the crystal is more appropriately called a viscosity sensor. The
second problem is that liquids tend to form spheres on the face of the crystal
after only very modest accumulations of a few monolayers. This aggravates the
problem caused by non-infinite rigidity. Another aspect of the problem is that the
liquid spheres form at random locations across the crystal. Because monitor
crystals have differential radial mass sensitivity an uncontrollable measurement
problem exists. Spheres formed at the center of the crystal contribute more than
spheres formed near the edge of the sensor’s aperture.

2.8 Operation as a One Layer Controller

This instrument is designed to provide automatic deposition rate control with
thickness termination as well as pre and post deposition source conditioning.
Fully automatic operation requires that the instrument be interfaced with the
deposition source power supply controller and the source shutter. In addition,
the instrument interfaces to many other deposition system components through
the SYSTEM I/O and AUX I/O connectors.
To operate the instrument as a single layer controller it is necessary to program
the film sequence parameters. A film sequence begins with a START command
and ends when the same film reaches the "IDLE" state.
NOTE: A START command may be provided by pressing START or by
activating the START input on the system I/O connector.
All instrumental action that occurs between these events is determined by the
IPN 074-183X

values programmed into the appropriate film specific parameters. Programming

the instrument is easily accomplished once you have made the determination
to monitor or control the process, chosen the type of material to deposit and its
required rate and thickness and have become familiar with the instrument
programming procedure. If you are familiar with the terminology of depositions,
it is only required that the desired values of each parameter be entered for the
designated FILM #.
A film is composed of many possible states, with a state being defined as one
process event. These states sequence in order and are defined and diagramed
in this manual in Chapter 4, Programming System Operation Details. The
values used in the various parameters tell the instrument how to specifically
execute the deposition process, see section 4.2 on page 4-6 for a description
of which parameters affect a given process state. Figure 2-21 on page 2-35 is
a generalized overview of the normal processing of a film and its source control.

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 XTC/C - XTC/2 Operating Manual

For example, if the first layer of the process is 1000Å of copper it would be
convenient to dedicate film 1’s parameters to describing this particular layer of
the process.
These instruments allow up to nine individual film programs to be defined,
stored and recalled. When the display is in the program mode the particular
FILM # being modified is always visible (except when the S and Q parameters
are being programmed). The FILM # may be changed by moving the cursor to
that parameter and changing its value. When the display is in the operate mode
the film executing or about to execute is displayed as FILM #.
A START command will begin processing that film if it is not already processing
another film or in the STOP state. START commands are ignored if a film is
already processing.

2.8.1 Skipping a State Overview

It is not necessary to use all possible film states when a film is programmed.
Unwanted states will be executed in 250 ms if the film parameters which are
used to define the state are set to zero. The IDLE state of a film, however, will
always be executed. When the desired DEP RATE is programmed to zero, the
entire DEPOSIT state will be skipped (including any rate ramps). If no
parameters have been programmed, the film will immediately sequence to the
IDLE state when the START key is pressed.

2.8.2 Idle State Processing Overview

When a film program finishes in the IDLE state at a programmed IDLE PWR
level other than zero, a subsequent START command will initiate any film
program utilizing the same source output at the RISE TIME 2 state, skipping all
previous states, even if they were programmed. If RISE TIME 2 is not present
in the film, the instrument will sequence to the next viable state — SHUTR DLY,
DEPOSIT, IDLE RAMP or IDLE (in the stated order).

IPN 074-183X
2.8.3 Manual Power Overview
The MANUAL state may be entered whenever the instrument is not in the
STOP or IDLE state by pressing the MPWR switch. The shutter will always
open and the FINAL THK event will be ignored. When the MANUAL control
state is ended, the unit will sequence to the DEPOSIT state, provided that the
FINAL THK limit has not been exceeded. Any thickness accumulated while the
unit has been in the MANUAL state will be retained and added to when the
DEPOSIT state is entered.
When the instrument is in the MANUAL state the control voltage output
(% Power on the display) may be increased or decreased either through the
Handheld Power Controller (optional) or the or the or keys on the front
panel. The rate of change of source power is linearly ramped from 0.4% per

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 XTC/C - XTC/2 Operating Manual

second to 4% per second over 4 seconds and then held at a constant 4% per
second. This feature is designed to allow fine adjustment of the control voltage
when needed, while also allowing rapid control voltage adjustment if desired.

2.8.4 Time Power State Overview

The time power state will only be entered while the instrument is in the
DEPOSIT or RATE RAMP state and the film program has been set to complete
on time-power in the event of a failed crystal. If a crystal fail is detected during
the pre-deposit states the instrument will not sequence further, causing an
instrument STOP even if the complete on TIME-PWR (Y) option is selected.
Once in the TIME-POWER state, the source power will remain at the 5 seconds
average power value of the source control output computed 2.5 seconds prior
to the failure. (These times are appropriately modified for PID control.)
Thickness is accumulated at the programmed DEP RATE value. The
time-power state will terminate when the FINAL THK value has been exceeded.
Any post-deposit states will be executed exactly as if a normal deposition had
occurred. The TIME-PWR annunciator will remain on the display. When the
post-deposit states are complete, the instrument will enter the STOP state. A
RATE RAMP cannot be executed in TIME-POWER and that state is
consequently skipped.
Figure 2-21 State Processing for a Film
IPN 074-183X

2.8.5 Controlling the Source Overview

Stable rate control during the DEPOSIT state requires the proper setting of the
following control loop algorithm adjusting parameters: CTL GAIN, CTL TC, and
CTL DT. By properly adjusting these parameters it is possible to control sources
of nearly any physical characteristic by employing either a PID or integrating
algorithm. The proper adjustment technique and a detailed algorithm
description is covered in 4.5, Tuning the Control Loop.

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 XTC/C - XTC/2 Operating Manual

2.9 Operation as a Multi-Layer Controller

This instrument can be programmed to execute a series of up to three of the
stored films in a repetitive sequence. This sequence of films is called a
PROCESS. A separate START command is necessary to initiate each layer of
a process. This command may be initiated from the front panel switch, through
the rear panel I/O or through the computer interfaces.

2.9.1 Defining a Process Overview

A process is programmed by moving the cursor to the LYR parameter when the
display is in the program mode. The LYR parameter value is visible any time
the display is in the operating mode.
When the LYR parameter is selected; the segmented digit immediately to the
right begins to flash. Entering a digit between one and nine will designate the
FILM associated with that number to be the film first executed in the
PROCESS. Upon entry, the selected digit will become static and the second
segmented digit will blink. Entering a second (or even the same) number will
establish the second layer of the PROCESS. Now the third digit will flash,
entering a third number will complete the process sequence.
A PROCESS sequence may be altered any time the keyboard is unlocked or
through the various computer interfaces.
NOTE: If a zero is entered for the second or third layer, that layer(s) will be
skipped. The first layer must be a non-zero value.

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

Chapter 3
Installation

3.1 Installing the Instrument - Details

A general schematic of instrument installation is given in section 2.3 on page
2-8, use it for reference. The importance of grounding the instrument cannot be
over emphasized for both safety and performance needs.

3.1.1 Control Unit Installation

Review the specific suggestions and warnings concerning safety and
installation that are presented in section 1.1 on page 1-1.
It is generally advisable to centrally locate the controller, minimizing the length
of external cabling. The cable from the instrument to the XIU is fifteen feet.
Longer cables are specifiable as 30 or 100 ft. (max.), refer to section 2.6.6 on
page 2-25 for ordering details.
The control unit is designed to be rack mounted. It may be also used on a table;
four self-adhesive rubber feet are included in the ship kit for this purpose.

3.2 Electrical Grounding and Shielding

Requirements
Careful consideration of simple electrical guidelines during installation will
avoid many problems caused by electrical noise.
To maintain the required shielding and internal grounding as well as insuring
safe and proper operation, the instrument must be operated with all enclosure
IPN 074-183X

covers and option panels in place. These must be fully secured with the screws
and fasteners provided.

3-1
 XTC/C - XTC/2 Operating Manual

3.2.1 Verifying / Establishing Earth Ground

If local facilities engineering cannot provide a low impedance earth ground
close to the instrument, the following procedure is recommended.
Where soil conditions allow, drive two ten foot copper clad steel rods into the
ground six feet apart. Pour a copper sulfate or other salt solution around the
rods to improve the soil’s conduction. A near zero resistance measurement
between the two rods indicates that a desirable earth ground has been
established. In severe cases it may take several soakings of solution over
several days to reach this condition.
NOTE: Keep connections to this grounding network as short as possible. Most
noise transients contain significant power at high frequencies. A long
path adds to the ground circuit's inductance and thereby increases its
impedance at these frequencies.

3.2.2 Connections to Earth Ground

The ground connection on the instrument is a threaded stud with a hex nut. It
is convenient to connect a ring terminal to the ground strap, thus allowing a
good connection with easy removal and installation. See Figure 3-1 for the
suggested grounding scheme. In many cases, a braided ground strap is
sufficient. However, there are cases when a solid copper strap (0.030 thick X
1" wide) is more suitable because of its lower RF impedance.
Figure 3-1 System Grounding Diagram

_+ &

Q 
@$$

~ 


IPN 074-183X

q$
~ 
€ 

3-2
 XTC/C - XTC/2 Operating Manual

CAUTION

An external ground connection is required to ensure

proper operation, especially in electrically noisy
environments.

When used with RF powered sputtering systems, the grounding scheme may
have to be modified to optimize the specific situation. An informative article on
the subject of "Grounding and RFI Prevention" was published by H.D. Alcaide,
in "Solid State Technology", p 117 (April, 1982).

3.2.3 Minimizing Noise Pickup from External Cabling

When an instrument is fully integrated into a deposition system, there are many
wire connections; each a potential path for noise to be conducted to the inside.
The likelihood of these wires causing a problem can be greatly diminished by
using the following guidelines:
Š Use shielded coax cable or twisted pairs for all connections.
Š Minimize cable lengths by centralizing the controller.
Š Avoid routing cables near areas that have the potential to generate high
levels of electrical interference. For example, large power supplies, such as
those used for electron beam guns or sputtering sources, can be a source
of large and rapidly changing electro-magnetic fields. Placing cables as little
as one foot (30 cm) from these problem areas can be a very significant
improvement.
Š Be sure that a good ground system and straps are in place as
recommended above.
Š Ensure that all instrument covers and option panels are in place and tightly
IPN 074-183X

secured with the provided fasteners.

3-3
 XTC/C - XTC/2 Operating Manual

3.3 Connection to Rear Panel

The long term performance of this instrumentation is dependent on the quality
of the installation. A first rate installation includes the proper assembly of the
user/OEM installed cabling. The assembly instructions for the connectors used
on this instrumentation are shown in the following sections.

3.3.1 The BNC Connectors

Because complete BNC cables are so common, there are no mating connectors
supplied in the ship kit for the source and recorder outputs. It is recommended
that completed BNC type cables be purchased locally, even if one end is cut off
for connection to the external apparatus.

3.3.2 The "D" Shell Connectors

The "D" shell connectors use solder cup contacts that will accept solid or
stranded wire with a maximum individual wire size of 20 AWG. Multiple stranded
wire jumpers may equal 18 AWG, or two 22 AWG wires may be employed. The
recommended wire strip length is 1/4" (6.4 mm).
The duplex tin/lead solder cup readily accepts tinned leads and will securely
strain-relieve wires when properly soldered. See Figure 3-2 on page 3-5.
The American National Standards Institute Standards For Soldering Electronic
Interconnections (ANSI/IPC-S-815A) is recommended for establishing
soldering quality guidelines.
The soldering procedure is as follows:
1 Obtain a connector and wire(s) of the type and size required for your
application.
2 Ensure that surfaces to be soldered are clean and free of any contaminants

IPN 074-183X
that may inhibit solderability.
3 Strip wire(s) to recommended strip length (1/4"). Tin the leads if required.
4 Obtain resin flux, 40/60 alloy solder, and a low-wattage soldering iron.
NOTE: It is common to use heat shrink tubing over solder joints to insulate the
exposed solder connection at the cup. If using heat shrink tubing,
ensure that the tubing sections are cut to proper length and placed on
the wire(s) prior to soldering. After wires are terminated, slide tubing
over solder connections and shrink with an appropriate heat source.

3-4
 XTC/C - XTC/2 Operating Manual

5 Coat the stripped portion of the wire(s) with the flux and insert into the solder
cup of the contact until the conductor is bottomed in the cavity.
6 Heat the solder cup with the soldering iron and allow the solder to flow into
the cup until the cavity is filled but not over filled.
7 Continue soldering wires until all terminations are complete.
8 Clean the soldered connections with a suitable alcohol/water rinse to
remove flux and solder residue.
Figure 3-2 Solder Cup Connector

Wire Strip
Length 1/4" (6.4 mm)

Solder Cup
Contacts

Grounding
Indents
(Plug Only)
IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

3.4 Sensor Selection Guide

The choice of sensor type must be dictated by the process, the deposition
material and the physical characteristics of the process chamber. General
guidelines for each sensor type produced by INFICON are outlined in the
Sensor Selection table below. For specific recommendations, consult your
INFICON representative.
Table 3-1 Sensor Selection Table

Temp Crystal Utility

Name IPN °C Exchange Connector Comments
Standard 750-211-G1 130° Front Side
Standard 750-211-G2 130° Front Side
w/Shutter
Compact 750-213-G1 130° Front Rear For tight spaces
Compact 750-213-G2 130° Front Rear For tight spaces
W/Shutter
Dual 750-212-G2 130° Front Side Two crystals for
crystal switch.
Includes Shutter
Sputtering 007-031 130° Rear Side For RF and diode
sputtering. (Optional
shutter available.)
Bakeable
12" (304.8 mm) 007-219 450° Front Side Must remove water
20" (508 mm) 007-220 cooling and open the
30" (762 mm) 007-221 tubes prior to
bakeout
Bakeable
w/Shutter
12" (304.8 mm) 750-012-G1 450° Front Side Must remove water

IPN 074-183X
20" (508 mm) 750-012-G2 cooling and open the
30" (762 mm) 750-012-G3 tubes prior to
bakeout
CrystalSix 750-446-G1 130° Front Side 6 crystals for process
security.
*These temperatures are conservative maximum device temperatures, limited by the
properties of Teflon at higher temperatures. In usage, the water cooling allows
operation in environments that are significantly elevated, without deleterious effects.
NOTE: Do not allow water tubes to freeze. This may happen if the tubes pass through
a cryogenic shroud and the water flow is interrupted.
NOTE: For best operation, limit the maximum input water temperature to
less than 30 °C.
NOTE: In high temperature environments more heat may transfer to the water through
the water tubes than through the actual transducer. In extreme cases it may be
advantageous to use a radiation shield over the water tubes.

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 XTC/C - XTC/2 Operating Manual

3.5 Guidelines for Transducer Installation

CAUTION

The performance of this instrument depends on the

careful installation of the chosen transducer. Improper
installation will cause problems with deposition
repeatability, crystal life and rate stability.

3.5.1 Sensor Installation

Figure 3-3 shows a typical installation of an INFICON water cooled crystal
sensor in the vacuum process chamber. Use the illustration and the following
guidelines to install your sensors for optimum performance and convenience.
IPN 074-183X

3-7
 XTC/C - XTC/2 Operating Manual

Figure 3-3 Typical Installation

Mounting Bracket

Coax Cable
(Routed with
Water Tubes)

Sensor
Shutter

Brazing
Adapters
Or,
Source to Sensor
Customer Supplied
10" Minimum
Cajon Coupling

Source
Shutter

Source

Pneumatic
Actuator
To
Source Controller

Water In
Water Out

IPN 007-199
Shutter XIU (Oscillator)
Solenoid

IPN 074-183X
Assembly Air, 80 PSI, 110 PSI Max.

Instrument Chassis
To
Sensor
Shutter

3-8
 XTC/C - XTC/2 Operating Manual

Generally, install the sensor as far as possible from the evaporation source (a
minimum of 10" or 25.4 mm) while still being in a position to accumulate
thickness at a rate proportional to accumulation on the substrate. Figure 3-4
shows proper and improper methods of installing sensors.
To guard against spattering, use a source shutter or crystal shutter to shield the
sensor during the initial soak periods. If the crystal is hit with even a minute
particle of molten material, it may be damaged and stop oscillating. Even in
cases when it does not completely stop oscillating, it may become unstable.
SENSORS
Figure 3-4 Sensor Installation Guidelines

C O RREC T

INC O RREC T

O BSTRUC TIO N

INC O RREC T C O RREC T

INC O RREC T

SO URC E
IPN 074-183X

3-9
 XTC/C - XTC/2 Operating Manual

3.5.2 CrystalSix
Installing the CrystalSix transducer requires that the CrystalSwitch
configuration switches be set appropriately; refer to section 2.6.2 on page 2-19.
Follow the guidelines in the CrystalSix Manual (IPN 074-155) and Figure 3-5. If
the unit is configured for one CrystalSix, it must be connected to Sensor 1.
Figure 3-5 CrystalSix Installation for XTC/2 and XTC/C

Typical System Setup

Support Bracket Coaxial Cable

(Not Provided) 30’ Length Std.
IPN 007-044

CrystalSix
IPN 750-260

10" Min. Braze Connections

Source to or Adapters
Sensor
Distance

Source
Shutter
1" Bolt
750-030-G1
Source or
2.34" ConFlat
002-080
Pneumatic
Actuator Orfice
IPN 059-172
Source
Air 90-110 PSI Max.
Controller
Solenoid
In Assembly IPN 007-199
Out

XIU Min. Flow

Water In
200 cc/min

IPN 074-183X
Water Out
@ 30 °C max.
IPN 757-305-G15, G30 or G100

Sensor 1 or 2
(Pin #)
(5)
Sensor Shutter 1
(6) XTC/2 or XTC/C
System I/O
Connector
(1) (Typical)
Source Shutter 1
(2)

Source 1 or 2

3 - 10
 XTC/C - XTC/2 Operating Manual

3.5.3 Check List for Transducer Installation

Š Mount the sensor to something rigid and fixed in the chamber. Do not rely
on the water tubes to provide support.
Š Plan the installation to insure that there are no obstructions blocking the
path between the Sensor and the Source. Be certain to consider rotating or
moving fixtures.
Š Install sensors so their central axis (an imaginary line drawn normal to the
center of the crystal’s face) is aimed directly at the virtual source being
monitored.
Š Be sure there is easy access for the exchange of crystals.
Š For systems employing simultaneous source evaporation (co-dep), try to
locate the sensors so the evaporant from each source is only flowing to one
sensor. This is not generally possible to do without special shielding or
optional "material directors" for the transducers.
Š The use of water cooling is always recommended, even at very low heat
loads and low rates.
Š If penetrating a cryogenic shroud, be sure that the cooling water is kept
flowing or drained between uses. Failure to do so could cause the water to
freeze and the water tubing to rupture.
Š Avoid running cold water tubes where condensation can drip into the
feedthroughs. This condensate can effectively short the crystal drive
voltage, causing premature crystal failure.

3.6 Use of the Test Mode (XTC/2 Only)

This instrument contains a software controlled test mode which simulates
actual operation. The purpose of the Test Mode is to verify basic operation and
IPN 074-183X

for demonstrating typical operation to the technician.

The Rate displayed during Test Mode operation is determined as follows:
·
40 TOOLING (%)
Displayed Rate = -------------------------------------------------- × ---------------------------------------- Å/sec [1]
DENSITY (gm/cc) 100%
All relays and inputs operate normally during Test Mode operation.

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 XTC/C - XTC/2 Operating Manual

3.6.1 Operational Test

The power switch should be in the STBY position before the instrument is
connected to line power.
Perform the self test as follows:
1 Verify that no system cables other than the power cord are connected to the
unit. Relays may be verified with an ohm meter or custom test box.
2 Set configuration switch 1 to the "ON" position.
3 Press the ON/STBY switch, the green power LED should light. If Err is
displayed on the LCD, see section 6.2 on page 6-1.
4 The following LCD displays will appear:
TEST
READY
XX:XX PHASE MIN:SEC
XX% POWER
XTAL FAIL
5 Press the PROG key. The program display will appear and the cursor will
be located beside RISE TIME.

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

6 Refer to the list of parameters in Table 3-2 and enter the data
as they are given.
Table 3-2 Operational Test Parameters

RISE TIME 1 00:20 min:sec

SOAK PWR 1 20 %
SOAK TIME 1 00:10 min:sec
RISE TIME 2 00:15 min:sec
SOAK PWR 2 35 %
SOAK TIME 2 00:10 min:sec
SHUTR DLY N Y:N
NEW RATE 00.0 Å/sec
R RAMP TIME 00:0 min:sec
IDLE RAMP 00:00 min:sec
IDLE PWR 02 %
TIME PWR N Y:N
XTAL SWCH S 0
XTAL SWCH Q 0
TOOL FACT 1 110.0 %
TOOL FACT 2 100.0 %
DEP RATE 16.2 Å/sec
FINAL THK 2.000 kÅ
THICK SPT 0.000 kÅ
DENSITY 02.73 gm/cc
Z-RATIO 1.000
SENSOR # 1
SOURCE # 1
CRUCIBLE # 0
IPN 074-183X

CTL GAIN 10 Å/sec / %

CTL TC 5 sec
CTL DT 0.1 sec
MAX PWR 50 %
SAMPLE 5 %
HOLD TIME 00:00 min:sec

7 When the correct sequence of numerals appear in the flashing display,

press the key to enter and store the data.
8 Press the PROG key to exit the program display.
9 Press START to begin the programmed sequence.

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 XTC/C - XTC/2 Operating Manual

10 RISE TIME 1 will be displayed, the min:sec counter begins to decrement

from 00:20, while POWER increases to 20%. At time 00:00 the state
message changes to SOAK TIME 1 while the counter begins to decrement
from 00:10. Upon reaching time 00:00, the state message again changes to
RISE TIME 2.
11 RISE TIME 2 begins to decrement from time 00:15 while POWER increases
to 35%. Upon reaching time 00:00, the state message changes to SOAK
TIME 2 and the time again begins to decrement from time 00:10. At time
00:00 the state message changes to DEPOSIT.
12 Once in DEPOSIT, the time begins to increment and the deposition rate will
be 16.1Å/s. The THICK SPT annunciator is displayed and power is at 36%.
Upon reaching the FINAL THK parameter of 2.000kÅ, deposition stops with
an elapsed time of 02:03. The clock immediately begins counting up from
00:00. The FINAL THK annunciator is displayed.
13 The instrument is now in IDLE PWR and will remain in this mode until
START is pressed.
14 When START is pressed, the process will repeat steps 12 through 14.
NOTE: If IDLE PWR is reprogrammed to 0, the process will begin at RISE
TIME 1.
15 After successful completion of the above steps, power down the instrument
to leave the TEST mode by turning configuration switch 1 "OFF" and then
placing the unit first in STBY and then "ON" to read the new configuration.

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

3.7 Input and Output Details

3.7.1 Relays

WARNING

The relay, relay circuit, and associated pins in the I/O

connector(s) have a maximum voltage rating of
30 V(dc) or 30 V(ac) RMS or 42 V(peak). The maximum
current rating per connector pin or relay contact is
2.5 Amps.

Their function is as follows:

Table 3-3 System I/O Connector

Relay # Pin # Function** Closed Contacts Open Contacts

1 1,2 Source Shutter 1 During Deposit and Balance
Manual states when
source 1 is designated.

2 3,4 Source Shutter 2 During Deposit and Balance

Manual states when
Source 2 is
designated.

3 5,6 Sensor Shutter 1 During the following Balance

4 7,8 Sensor Shutter 2 states when the Balance
designated sensor is
active:
IPN 074-183X

- RateWatcher Sample
- Deposit
- Manual
- CrystalSwitch to dual
head backup
- Pulses during
CrystalSix transitions
- Shutter delay

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 XTC/C - XTC/2 Operating Manual

Table 3-3 System I/O Connector (continued)

Relay # Pin # Function** Closed Contacts Open Contacts

5 9,10 Stop When a stop condition When stop
is generated, see condition is cleared
section 4.3.2 on page
4-9, section 4.3.1 on
page 4-9, and section
2.6.2 on page 2-19

6 11,12 End of Process When last layer of the The the start of
process reaches the next process.
IDLE state.
** Function may be overwritten by Remote Communications Commands R15 - R18,
see section 3.8.5 on page 3-26.

Table 3-4 Aux I/O Connector

Relay # Pin # Function** Closed Contacts Open Contacts

7 1,2 Thickness Set THK SPT exceeded Entry of IDLE state
Point for two consecutive
measurements
or
End of Film When layer reaches On a RESET or
the idle state START of the next
layer

8 3,4 Feedtime (Soak 2) During Soak 2 Balance

9 5,6 Crystal Fail When all crystals have When crystal fail
been consumed has been cleared

IPN 074-183X
10 7,8 Alarms When alarm When alarm
conditions have been condition ceases
triggered; see section
4.3.1 on page 4-9.
or
In Process When a process is When in the STOP,
started READY, or IDLE
states

11 9,10 Source 1/Source 2 At start of a layer At start of layer

utilizing Source 1 utilizing Source 2
(toggle)

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 XTC/C - XTC/2 Operating Manual

Table 3-4 Aux I/O Connector (continued)

Relay # Pin # Function** Closed Contacts Open Contacts

12 11,12 END Deposit When FINAL THK is Entry of READY

exceeded for two state
consecutive
measurements
** Function may be overwritten by Remote Communications Commands R15 - R18,
see section 3.8.5 on page 3-26.

Table 3-5 Open Collector Outputs* (one of eight encoding)

Output # Low High

1 18 Crucible Select 1 If the active layer's designated Balance
crucible is 1, or 0
2 19 Crucible Select 2 If the active layer's designated Balance
crucible is 2
3 20 Crucible Select 3 If the active layer's designated Balance
crucible is 3
4 21 Crucible Select 4 If the active layer's designated Balance
crucible is 4
5 22 Crucible Select 5 If the active layer's designated Balance
crucible is 5
6 23 Crucible Select 6 If the active layer's designated Balance
crucible is 6
7 24 Crucible Select 7 If the active layer's designated Balance
crucible is 7
8 25 Crucible Select 8 If the active layer's designated Balance
crucible is 8
IPN 074-183X

* The crucible select outputs are open collector type, 5 volt maximum with a capability
of sinking 5 TTL loads (10 mA)

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 XTC/C - XTC/2 Operating Manual

3.7.2 Inputs
Inputs are activated by pulling the specific input's terminal to ground (<0.8V)
through a contact closure to common (GND) or with TTL/CMOS logic having
current sink capability of 2 ma (1 low power TTL load). These ports are read
every 250 ms; signals must be present during a read cycle.

Table 3-6 System I/O Connector

Input # Pin # Function Description

13,14,15, Input Common Used as reference for activating any of
16,17 (GND) the inputs

1 18 START deposition Detection of a falling edge duplicates

front panel START

2 19 STOP deposition Detection of a falling edge induces a

STOP

3 20 END deposit Detection of a falling edge terminates

the Deposit state just as if the FINAL
THK were achieved.
Configuration switch #12 set for "Standard" Input Option:
4 21 SAMPLE INITIATE Detection of a falling edge initiates a
RateWatcher sample if the film is
programmed for this feature.

5 22 SAMPLE INHIBIT Application of a ground reference

voltage maintains the RateWatcher in
the Hold condition.

IPN 074-183X
6 23 CRYSTAL FAIL Application of a ground reference
INHIBIT voltage prohibits the closure of the
Crystal Fail Relay and the associated
Stop.

7 24 ZERO thickness Detection of a falling edge duplicates

the front panel ZERO.

8 25 SOAK 2 HOLD Application of a ground reference

voltage extends the SOAK 2 state until
the signal/closure is removed.

3 - 18
 XTC/C - XTC/2 Operating Manual

Table 3-6 System I/O Connector (continued)

Input # Pin # Function Description

Configuration switch #12 set for "Film Select" Input Option:

4 21 RESET
5 22 Select Film MSB
6 23 Select Film
7 24 Select Film
8 25 Select Film LSB

13 Input Common Used as a reference for activating any

(GND) of the inputs.

9 14 CRUCIBLE VALID Application of a ground reference

voltage from the crucible rotation
mechanism is used to signal that the
proper crucible has indexed into
position and state sequencing may
proceed.

15,16,17 Input Common Used as a reference for activating any

(GND) of the inputs.

3.7.3 Chart Recorder

IPN 074-183X

The chart recorder output has 12 bit resolution with one additional bit of sign
information over the range of -10 to +10 volts. It can supply up to 5 milliamps
and has an internal resistance of 100 ohms. The output is proportional to rate,
thickness or rate deviation depending on the setting of the XTC/2’s
configuration switches; see section 2.6.2 on page 2-19. The XTC/C’s default
recorder function is 0-100 Å/sec rate and is changed by sending the R 38
command, page 3-33. It is normal for ripple to appear on these outputs to a
maximum of 5 mV at ~84 Hz. This output is updated every 250 milliseconds.

3 - 19
 XTC/C - XTC/2 Operating Manual

3.7.4 Source Outputs

The source outputs will drive +/- 10.00 volts into a 400 ohm load. The output is
proportional (15 bits) to the required source power. It is normal for ripple to
appear on these outputs to a maximum of 50mV at ~84 Hz. The polarity is set
with a configuration switch; see section 2.6.2 on page 2-19. This output is
updated every 250 milliseconds.

3.8 Computer Communications

This instrument supports a number of standard and optional computer
communications protocol formats. RS232 is standard, operating in either
checksum or non-checksum as well as SECS II formats. It may also be
configured to automatically output process data (data logging) upon reaching
FINAL THK. Additionally, an IEEE communications option may be installed.

3.8.1 Communications Setup

To set up the remote communication interface, when powering up the XTC/2,
hold down the 0 key. The following set of parameters can be entered using the
digits, enter, and clear keys.
tyPE (0 = INFICON Checksum, 1 = INFICON no checksum, 2 = SECS, 3 = Datalog)

(If SECS is chosen for tyPE the next 5 parameters are accessed):

d Id (Device ID 0-32767)

t1 (Timer 1 per SECS definition) (0-10.0 seconds)

t2 (Timer 2 per SECS definition) (0.2-25.0 seconds in 0.2 increments)

IPN 074-183X
rtrY (Retry limit per SECS definition) (0-31)

dUPL (Duplicate block per SECS definition)

baUd (0=1200, 1=2400, 2=4800, 3=9600)

IEEE (IEEE address, 0-30) - requires optional hardware

When this list is complete, the READY message is flashed and the choice will
be given to either repeat the list or continue with normal operation. Pressing
ENTER will continue with normal operation. Pressing CLEAR will repeat the list.

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 XTC/C - XTC/2 Operating Manual

NOTE: Do not turn the unit off while in the Communications Program Mode,
otherwise the new parameter values will not be saved properly.
To set up the communication interface for the XTC/C, see the configuration
switch setup (section 2.6.2 on page 2-19) and review the communication
command section 3.8.5 on page 3-26. The cables used between the XTC and
the host computer must be wired as depicted in the cable diagram in section
2.6.7 on page 2-26.

3.8.1.1 IEEE Settings for a National Instruments IEEE-GPIB Board

When establishing IEEE communications the following settings are found to
work using a National Instruments IEEE-GPIB board. These values are set
using the IBCONF.EXE file provided by National Instruments.
Figure 3-6 Board Characteristics

Figure 3-7 Device Characteristics

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

3.8.2 Basic Command Structure

The following commands are available via the computer communications:
E . . . . . . Echo. Returns the sent message.
H . . . . . . Hello. Returns the model and software version number.
Q . . . . . . Query. Interrogates the programmable parameters and returns the
value of parameter requested.
U . . . . . . Update. Replaces the particular parameter with the value sent.
S . . . . . . Status. Sends back pertinent information based on the specific
request made.
R . . . . . . Remote. Perform an action based on the specific command given.
Many of these mimic front panel keystrokes.
The send and receive protocol formats are described below and use the
following abbreviations:
STX . . . . Start of transmission character
00,NN . . The size of the command is 2 bytes long with 00 representing the
high order Byte and NN representing the low order byte.
ACK . . . . Command acknowledged character
NAK . . . . Command not acknowledged character
LF . . . . . Line Feed (EOT byte for IEEE)
CS . . . . . Checksum
CR . . . . . Carriage Return
CHECKSUM FORMAT (Message Protocol)
To XTC: STX 00 NN message_string CS

IPN 074-183X
From XTC: STX 00 NN ACK message_string CS (if success)
- or -
STX 00 NN NAK error_code CS (if failure)
NONCHECKSUM FORMAT (Message Protocol) (RS232)
To XTC: message_string ACK
From XTC: message_string ACK (if success)
- or -
error_code NAK (if failure)

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 XTC/C - XTC/2 Operating Manual

IEEE488 FORMAT (Message Protocol)

To XTC: message_string LF d10 (CHR$ 10)
From XTC: message_string LF (if success)
- or -
error_code LF (if failure)
SECS FORMAT (Message Protocol)
To XTC: NN SECS_10_BYTE_HEADER message CS CS
From XTC: NN SECS_10_BYTE_HEADER ACK message CS CS
(if success)
- or -
NN SECS_10_BYTE_HEADER NAK error_code CS CS
(if not)
The following Error Codes are used:
A. . . . . . . Illegal command
B. . . . . . . Illegal Value
C . . . . . . Illegal ID
D . . . . . . Illegal command format
E. . . . . . . No data to retrieve
F . . . . . . . Cannot change value now
G . . . . . . Bad checksum
NOTE: When transmitting commands directly by typing on a keyboard, the
entire command, including the "ACK", must be entered quickly.
Otherwise, the instrument will fail to recognize the transmission as a
IPN 074-183X

valid command.

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 XTC/C - XTC/2 Operating Manual

3.8.3 Service Requests and Message Available

In the IEEE mode there are a number of events which will trigger service
requests, a request by the instrument to transmit information to the host. The
instrument does this by triggering the RQS bit of the Status Byte. A host initiated
serial poll then identifies the requesting device by the presence of a 1 in the
RQS (26) bit of the status byte. The particular service request generator event
is encoded in bits 20 - 23 inclusive, as shown below:

RQS MAV

27 26 25 24 23 22 21 20
not not
used used

Service request
generation encoding

Table 3-7 Service Request Encoding

Generator Event Code Value

Final Thickness 0001 1
Instrument in STOP State 0010 2
End of a Layer 0011 3
STBY/ON sequence 0100 4
End of a Process 0101 5
Crystal Fail 0110 6
250ms DATA READY. Available only 0111 7
after R23 is issued, see page 3-33.
This is automatically cleared on

IPN 074-183X
crystal failure.

It takes the instrument various lengths of time to formulate a correct response

to queries for information. To avoid unnecessarily repeated bus traffic, it is
suggested that the host monitor the MAV (message available) status bit to
determine when a response for information is fully assembled and ready to
transmit. See section 3.8.7 on page 3-38 for a sample program utilizing these
features.

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 XTC/C - XTC/2 Operating Manual

3.8.4 Datalogging
The DATALOG data output represents the information concerning the latest
"shutter open" to "shutter close" sequence.
Automatic data logging is enabled by choosing DATALOG for the
communications type, see section 3.8.1 on page 3-20. If DATALOG is chosen,
the RS232 port is configured to output the DATALOG information only and
cannot receive commands from a host computer. The IEEE option, if installed,
will continue to work in the normal fashion.
The data is a series of ASCII strings, each separated by a "carriage return and
line feed", in the order below:
1 Layer # (1-3)
2 Film # (1-9)
3 Rate = _ _ _.__Å/s
4 Thickness = _ _ _ _._ _ _ _ kÅ [Last good thickness, if crystal failed]
5 Deposit Time = _ _:_ _ Min:Sec.
6 Average Power = _ _._%
7 Begin Frequency = _ _ _ _ _ _ _._ Hz
8 End Frequency = _ _ _ _ _ _ _._ Hz [negative of last good frequency if crystal fail]
9 Crystal Life = _ _%
10 End on Time Power or Normal Completion

NOTE: In addition—if the Layer is the first one of a process, a preface "Begin
Process" followed by 2 blank lines is output. If the layer is the last one
of the process, a post script "End Process", preceded by 2 blank lines
is output.
Automatic datalogging is available only on the XTC/2; however, the datalog
information string is available via the S19 command for both the XTC/2 and
XTC/C.
IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

3.8.5 Computer Command Details

3.8.5.1 Echo Command

Echoes the message, i.e., returns the sent message.
The format is: E message string

3.8.5.2 Hello Command

The HELLO command will return the string "XTC/2 VERSION x.xx" where x.xx
is the software revision code.
The format is: H

3.8.5.3 Query Command

The Query command returns information concerning current instrument
parameter values.
The format of the query command is:
Q pp F - Query parameter pp of film F or Q pp L for layer parameters. A space
is used as a delimiter between Q and pp as well as pp and F, where F (or L), is
a digit between 1 and 9, L is a digit between 0 and 3, inclusive, and represents
the interrogated film or layer number.
NOTE: If pp is set to 99, output all parameters in the order specified below;
each parameter is separated by a space. This command allows a rapid
block transfer of data which is convenient for downloading films.

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

Table 3-8 Parameter Definition Table (for Query and Update Commands)

PP XTC/2 Parameter Range

0 Rise Time 1 0 - 9959 or
00:00 - 99:59
1 Soak Power 1 0.0 - 100.0
2 Soak Time 1 (See 0)
3 Rise Time 2 (See 0)
4 Soak Power 2 (See 1)
5 Soak Time 2 (See 0)
6 Shutter Delay 1 or 0 or 'Y' or 'y' or 'N' or 'n'
7 New Rate 0.0 - 999.9
8 Rate Ramp Time (See 0)
9 Idle Ramp (See 0)
10 Idle Power 0.0 - 100.0
11 Time Power (See 6)
12 Xtal Switch S 0-9
13 Xtal Switch Q 0-9
14 Tool Factor 1 10 - 500.0
15 Tool Factor 2 (See 14)
16 Deposition Rate 0 - 999.9
17 Final Thickness 0.0 - 999.000
18 Thickness Spt (See 17)
19 Density 0.5 - 99.99
20 Z-Ratio .1 - 9.999
21 Sensor 1-2
22 Source 1-2
23 Crucible 0-8
IPN 074-183X

24 Control Gain 0.01- 99.99

25 Control TC 0.1 - 100
26 Control DT 0.1 - 100
27 Max Power 0.0 - 100.0
28 Sample 0 - 99
29 Hold Time (See 0)
30-39 ** NOT USED **
40 Layer 1-31, 0-92

99 All See note on page 3-25

1
May be 0 for Q command; if 0, will return values for layers 1 - 3.
2 0 not allowed for layer 1.

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 XTC/C - XTC/2 Operating Manual

3.8.5.4 Update Command

The Update command replaces the current parameter value with the DATA
Sent.
To update film parameters the format of the update command is:
U pp F vvv - Parameter pp of film F, value vvv.
Update parameter pp of film F, with value vvv, a space is used as a delimiter
between the pp and F values as well as the F and vvv values, where F is a digit
between 1 and 9. Refer to Table 3-8 on page 3-27 for a numbered list of
parameters and their limits.
NOTE: If pp is set to 99, the data is a list of all parameters in the order specified.
This command allows a rapid block transfer of data which is convenient
for downloading films. Each parameter value must be separated by a
space.
To update layers the format of the update command is:
U 40 L v
Where 40 designates a layer is to be updated. The value L indicates which layer
to update. The value of L can be 1, 2, or 3, and v designates the film number to
insert into layer L.
For example, the update command
U 40 1 4
will enter film number 4 into layer 1.

3.8.5.5 Status Command

Sends back information based on specific request made.
The format of the status command is:

IPN 074-183X
S xx . . . . Return the status (value) of xx
where:
S . . . . . . Is the literal S
xx . . . . . One or two digit code per list below:
S0 . . . . . Process information. All the information from S1 to S10, separated
by spaces.
S1 . . . . . Rate (Å/s) currently read. x.x to xxx.x Å/s
S2 . . . . . Power (%) currently output. x.x to xxx.x %
S3 . . . . . Thickness (KÅ) currently accumulated. x.xxxx kÅ to xxxx.xxxx kÅ

3 - 28
 XTC/C - XTC/2 Operating Manual

S4 . . . . . . Phase currently in process. x

S4 Response Codes
0 . . . . . . . Ready phase
1 . . . . . . . Source switch phase
2 . . . . . . . Rise 1 phase
3 . . . . . . . Soak 1 phase
4 . . . . . . . Rise 2 phase
5 . . . . . . . Soak 2 phase
6 . . . . . . . Shutter delay phase
7 . . . . . . . Deposit phase
8 . . . . . . . Rate ramp phase
9 . . . . . . . Manual phase
10 . . . . . . Time power phase
11 . . . . . . Idle ramp phase
12 . . . . . . Idle phase
S5 . . . . . . Phase time (mm:ss). xx:xx
S6 . . . . . . Active layer. x
S7 . . . . . . Active film x
S8 . . . . . . Active crystal. x
S9 . . . . . . Crystal life (%). x % to xx %
S10 . . . . . Power source number. x (1 or 2)
IPN 074-183X

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S11 . . . . Output status - returns a string of 16 ASCII bytes, 1 per output. Each
byte has an ASCII value of 0 or 1, corresponding to the output status.
Position Outputs
1 Source Shutter 1 1=open, 0=closed
2 Source Shutter 2 1=open, 0=closed
3 Sensor Shutter 1 1=open, 0=closed
4 Sensor Shutter 2 1=open, 0=closed
5 Stop 1=stop, 0=not stop
6 End of Process 1=end of process
0=not end of process
7 Thickness Setpoint 1=Thk Setpoint
8 Feedtime (Soak 2) 1=soak 2 phase
9 Crystal Fail 1=Xtal Fail
10 Alarms 1=Alarm Cond.
11 Source 1/Source 2 1=Source 2, 0=Source 1
(toggle)
12 End Deposit 1=closed
13 Crucible Select (LSB)
14 Crucible Select binary value encoding
15 Crucible Select (MSB)
16 Unused

S12 . . . . Input status - returns 9 ASCII bytes, 1 per input. Each byte has an
ASCII value of 0 or 1, corresponding to the input’s status.
Input # Function
1 Start

IPN 074-183X
2 Stop
3 End
4 Sample Initiate
5 Sample Inhibit
6 Crystal Fail Inhibit
7 Zero Thickness
8 Soak 2 Hold
9 Crucible Valid?

9 8 7 6 5 4 3 2 1
0 = grounded (active)

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 XTC/C - XTC/2 Operating Manual

S13 . . . . . Raw frequency - Frequency of crystal being read. xxxxxxx.x Hz

[negative of last good frequency if failed]
S14 . . . . . Xtal Fail - Returns ASCII 1 if currently failed crystal, 0 if not.
S15 . . . . . Max Power - Returns ASCII 1 if currently outputting maximum power,
0 if not.
S16 . . . . . Crystal switching - Returns ASCII 1 if currently crystal switching, 0 if
not.
S17 . . . . . End of process - Returns ASCII 1 if process has ended, 0 if not.
S18 . . . . . STOP - Returns ASCII 1 if process is in STOP.
S19 . . . . . DATALOG - Returns the datalog string, refer to section 3.8.4 on page
3-25 for details. Data is separated by spaces instead of CR/LF.
The last byte returned identifies the End on Time Power or Normal
Completion information as 1 or 0 respectively. Also, when using the
S19 command the "Begin Process" and "End Process" messages
are not returned.
S20 . . . . . Present Configuration Switch Settings - returns 16 ASCII bytes with
a value of 0 or 1, corresponding to the position of configuration
switches 1-16; byte 1 corresponds to switch 1.
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
1 = Switch On
Also see S22 below.
NOTE: Switch settings do not take effect until a power STBY/Power
On sequence takes place.
S21 . . . . . Error Flag - If more than one error code exists, the response string
will return them all, each separated by a single space.
IPN 074-183X

S21 Response Codes

0 Error 0
2 Power Fail or STBY/ON sequence
9 Error 9
10 No Errors

S22 . . . . . Instrument configuration readout - the position of the configuration

switches at the last STBY/ON sequence. Also see S20 above and
section 2.6.2 on page 2-19.
S30 . . . . . Returns status of each crystal of a multi-head sensor.
S31 . . . . . Returns a rolling 6.25 second average (updated every 0.25 seconds)
of the measurement rate.

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3.8.5.6 Remote Command

The format of the remote command is:
R xx vvv
where:
R . . . . . . Is the literal R
xx . . . . . Is the remote code per list below.
vvv . . . . . Is the associated value needed for some remote commands.
R0 . . . . . Start. Equivalent to pressing the START key.
R1 . . . . . Stop. Equivalent to pressing the STOP key.
R2 . . . . . Reset. Equivalent to pressing the RESET key.
R3 . . . . . Remote Lock On. Prohibits any parameter from being entered via the
front panel.
R4 . . . . . Remote Lock Off. Clears remote lock condition.
R5 . . . . . Crystal fail inhibit on. Simulates remote input.
R6 . . . . . Crystal fail inhibit off. Simulates release of remote input.
R7 . . . . . Soak hold 2 on. Simulates remote input.
R8 . . . . . Soak hold 2 off. Equivalent release of remote input.
R9 . . . . . Manual on. Equivalent to front panel MPWR keystroke.
R10 . . . . Manual off. Equivalent to front panel MPWR keystroke.
R11 . . . . Set power level vv. Sets the active source’s power to vv%.
R12 . . . . Zero thickness. Simulates remote input or front panel ZERO
keystroke.

IPN 074-183X
R13 . . . . Final thickness trigger. Simulates remote input.
R14 . . . . CrystalSwitch. Equivalent to front panel XTSW keystroke.
R15 . . . . Enter communication I/O mode - See R16 (Only applies when in
communication I/O mode)
R16 . . . . Exit communication I/O mode - See R15 (Only applies when in
communication I/O mode)
R17 . . . . Set (close) relay xx (xx = 1-12)
R18 . . . . Clear (open) relay xx (xx = 1-12)
R19 . . . . Turn backlight ON
R20 . . . . Turn backlight OFF

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 XTC/C - XTC/2 Operating Manual

R21. . . . . Trigger beeper

R22. . . . . Clear Error Flag
R23. . . . . Set 250ms DATA Ready Service request (IEEE only).
NOTE: A crystal fail automatically clears the 250ms service request.
R24. . . . . Clear 250ms DATA Ready Service request (IEEE only).
R25. . . . . Set upper frequency limit to 6.027 MHz.

The following additional commands are available on the XTC/C only:

R30. . . . . Test ON
R31. . . . . Test OFF
R32. . . . . Control Mode Deposit
R33. . . . . Control Mode Etch
R34. . . . . Stop on Alarms
R35. . . . . No Stop on Alarms
R36. . . . . Stop on Max Power
R37. . . . . No stop on Max Power
R38 x . . . Recorder Type x (0 = Rate 0 to 100 Å/s,
1 = Rate 0 to 1000 Å/s,
2 = Thickness 0 to 100 Å,
3 = Thickness 0 to 1000 Å,
4 = Power,
5 = Rate Deviation,
6 = Rate 0 to 100 Å/s smoothed,
7 = Rate 0 to 1000 Å/s smoothed)
IPN 074-183X

R39. . . . . Set SECS Timer 1 (0.1 - 10.0)

R40. . . . . Set SECS Timer 2 (0.2 - 25.0)
R41. . . . . Set SECS Max Retries (0-31)
R42. . . . . Set SECS Duplicate Block to Yes
R43. . . . . Set SECS Duplicate Block to No

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 XTC/C - XTC/2 Operating Manual

3.8.6 Examples of RS232 Programs

3.8.6.1 Program Without Checksum

10 ’----XTC/2 RS232 COMMUNICATIONS PROGRAM WITHOUT CHECKSUM----
20 ’
30 ’------THIS PROGRAM IS DESIGNED TO TRANSMIT INDIVIDUAL COMMANDS TO THE XTC/2
AND ACCEPT THE APPROPRIATE RESPONSE FROM THE XTC/2, WRITTEN IN GWBASIC 2.32.
40 ’
50 OPEN "COM1:9600,N,8,1,CS,DS" AS #1 :’--OPEN COMM PORT 1
60 NAK$ = CHR$(21): ACK$ = CHR$(6) :’--DEFINE ASCII CODES
70 ’
80 INPUT "ENTER COMMAND"; CMD$ :’--ENTER COMMAND TO XTC/2
90 GOSUB 130 :’--GOTO TRANSMIT COMMAND
SUBROUTINE.
100 PRINT RESPONSE$ :’--PRINT XTC/2 RESPONSE
110 GOTO 80 :’--LOOP BACK FOR ANOTHER
COMMAND.
120 ’
130 ’----TRANSMIT COMMAND AND RECEIVE RESPONSE SUBROUTINE----
140 ’
150 ’----SEND COMMAND MESSAGE STREAM TO THE XTC/2----
160 PRINT #1, CMD$ + ACK$;
170 ’
180 ’----RECEIVE RESPONSE MESSAAGE FROM THE XTC/2----
190 RESPONSE$ = "" :’--NULL THE RESPONSE
200 TOUT = 3: GOSUB 260 :’ STRING AND SET TIMER.
210 IF I$ = ACK$ THEN RETURN :’--IF THE END OF RESPONSE
220 IF I$ = NAK$ THEN RETURN :’ CHARACTER IS RECEIVED
GOTO PRINT RESPONSE.
230 RESPONSE$ = RESPONSE$ + I$ :’--BUILD RESPONSE STRING
240 GOTO 200 :’ CHARACTER BY CHARACTER.
250 ’
260 ’----READ SERIALLY EACH CHARACTER FROM THE INSTRUMENT INTO VARIABLE I$----
270 ON TIMER (TOUT) GOSUB 300: TIMER ON
280 IF LOC(1) < 1 THEN 280 ELSE TIMER OFF: I$ = INPUT$(1,#1)
290 RETURN
300 TIMER OFF :’--INDICATE IF A CHARACTER
310 RESPONSE$ = "RECEIVE TIMEOUT" :’ IS NOT RECEIVED WITHIN
320 I$ = NAK$: RETURN 290 :’ 3 SECS.

IPN 074-183X

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3.8.6.2 Program With Checksum

10 ’--XTC/2 RS232 COMMUNICATIONS PROGRAM WITH CHECKSUM USING THE INFICON FORMAT--
20 ’
30 ’------THIS PROGRAM IS DESIGNED TO TRANSMIT INDIVIDUAL COMMANDS TO THE XTC/2
AND ACCEPT THE APPROPRIATE RESPONSE FROM THE XTC/2, WRITTEN IN GWBASIC 2.32.
40 ’
50 OPEN "COM1:9600,N,8,1,cs,ds" AS #1 :’--OPEN COMM PORT 1
60 STX$ = CHR$(2) : NAK$ = CHR$(21) : ACK$ = CHR$(6) :’--DEFINE ASCII CODES
70 ’
80 INPUT "ENTER COMMAND"; CMD$ :’--ENTER COMMAND TO XTC/2
90 GOSUB 170 :’--GOTO TRANSMIT COMMAND SUBROUTINE
100 IF RESPONSE$ = "RECEIVE TIMEOUT" THEN 140
110 L = LEN(RESPONSE$): L = L-1 :’--STRIP OFF THE ACK OR
120 RESPONSE$ = RIGHT$(RESPONSE$,L) :’ NAK CHARACTER FROM THE
130 ’ :’ RESPONSE STRING.
140 PRINT RESPONSE$ :’--PRINT XTC/2 RESPONSE
150 GOTO 80 :’--LOOP BACK FOR ANOTHER COMMAND.
160 ’
170 ’----TRANSMIT COMMAND AND RECEIVE RESPONSE SUBROUTINE----
180 ’
190 ’--BUILD COMMAND MESSAGE STREAM AND SEND TO THE XTC/2--
200 SIZEM$ = CHR$(LEN(CMD$) / 256) :’--CALCULATE THE 2 BYTE
210 SIZEL$ = CHR$(LEN(CMD$) MOD 256) :’ SIZE OF THE COMMAND.
220 ’
230 CHECKSUM = 0 :’--INITIALIZE CHECKSUM TO
240 FOR X = 1 TO LEN(CMD$) :’ ZERO AND CALCULATE A
250 CHECKSUM = CHECKSUM + ASC(MID$(CMD$,X,1)) :’ CHECKSUM ON THE COMMAND
260 NEXT X :’ STRING.
270 CHECKSUM$ = CHR$(CHECKSUM AND 255) :’--USE LOW ORDER BYTE AS CHECKSUM.
280 ’
290 PRINT #1, STX$ + SIZEM$ + SIZEL$ + CMD$ + CHECKSUM$
300 ’
310 ’----RECEIVE RESPONSE MESSAGE FROM THE XTC/2----
320 TOUT = 3: GOSUB 510 :’--SET TIMER AND WAIT FOR
330 IF I$ <> STX$ THEN 290 :’ START OF TRANSMISSION CHARACTER.
340 TOUT = 3: GOSUB 510 :’--RECIEVE HIGH ORDER BYTE
350 SIZE = 256 * ASC(I$) :’ OF TWO BYTE RESPONSE SIZE.
360 TOUT = 3: GOSUB 510 :’--RECIEVE LOW ORDER BYTE
370 SIZE = SIZE + ASC(I$) :’ OF TWO BYTE RESPONSE SIZE.
380 CHECKSUM = 0 :’--SET CHECKSUM TO ZERO
390 RESPONSE$ = "" :’ AND NULL THE RESPONSE
400 FOR I = 1 TO SIZE :’ STRING.BUILD THE
IPN 074-183X

410 TOUT = 3: GOSUB 510 :’ RESPONSE STRING AND

420 RESPONSE$ = RESPONSE$ + I$ :’ CALCULATE THE CHECKSUM
430 CHECKSUM = CHECKSUM + ASC(I$) :’ CHARACTER BY CHARACTER.
440 NEXT I
450 TOUT = 3: GOSUB 510 :’--RECIEVE THE CHECKSUM
460 N = ASC(I$) :’ CHARACTER AND COMPARE
470 Z = (CHECKSUM AND 255) :’ IT TO THE LOW ORDER
480 IF N <> Z THEN PRINT "RESPONSE CHECKSUM ERROR" :’ BYTE OF THE CALCULATED
490 RETURN :’ CHECKSUM.
500 ’
510 ’----READ SERIALLY EACH CHARACTER FROM THE INSTRUMENT INTO VARIABLE I$----
520 ON TIMER (TOUT) GOSUB 550: TIMER ON
530 IF LOC(1) < 1 THEN 530 ELSE TIMER OFF: I$ = INPUT$(1,#1)
540 RETURN
550 TIMER OFF :’--INDICATE IF A CHARACTER
560 RESPONSE$ ="RECEIVE TIMEOUT": RETURN 570 :’ IS NOT RECEIVED WITHIN
570 RETURN 490 :’ 3 SECS.

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 XTC/C - XTC/2 Operating Manual

3.8.6.3 Example of SEMI II Program

10 ’XTC/2 RS232 COMMUNICATIONS PROGRAM USING THE SECS FORMAT

20 ’---THIS PROGRAM IS DESIGNED TO TRANSMIT---
30 ’----INDIVIDUAL COMMANDS TO THE XTC/2-----
40 CLS
50 ’
60 ’
70 OPEN "COM1:2400,N,8,1,CS,DS" FOR RANDOM AS #1
80 EOT$ = CHR$(4): ENQ$ = CHR$(5): ACK$ = CHR$(6): NAK$ = CHR$(21)
90 TOUT = 3
100 C = 0:CHECKSUM = 0: CHEKSUMM$ = CHR$(0): CHEKSUML$ = CHR$(0)
110 INPUT "ENTER COMMAND"; CMD$
120 CMDLEN = LEN(CMD$): ’ CALUCULATE THE COMMAND LENGTH
130 ’
140 ’--ADD THE TWO BYTE PREAMBLE TO THE COMMAND--
150 PRE$ = CHR$(65) + CHR$(CMDLEN)
160 CMD$ = PRE$ + CMD$
170 CMDLEN = CMDLEN + 2
180 ’
190 ’--BUILD LENGTH BYTE, HEADER, TEXT, AND CHECKSUM BLOCK---
200 ’
210 ’-BUILD HEADER--
220 DID = 257: ’ DEVICE ID
230 ’RBIT = 0, :’ MESSAGE DIRECTION IS FROM HOST TO DEVICE
240 ’
250 ’--DETERMINE THE STREAM AND FUNCTION CODES--
260 ’
270 STREAM$ = CHR$(64): ’ USER DEFINED STREAM CODE
280 FUNCTION$ = CHR$(65): ’ USER DEFINED FUNCTION CODE
290 ’
300 ’
310 WBIT$ = CHR$(128): ’RESPONSE FROM XTC/2 REQUIRED
320 STREAM$ = CHR$(ASC(WBIT$) + ASC(STREAM$))
330 ’
340 ’--ENTER THE BLOCK BYTES--
350 ’
360 BYTE5$ = CHR$(128): ’ LAST BLOCK IN THE SERIES
370 BYTE6$ = CHR$(1): ’ ONLY BLOCK IN THE SERIES
380 ’
390 ’--ENTER THE SYSTEM BYTES--
400 ’
410 BYTE7$ = CHR$(0): BYTE8$ = CHR$(0): BYTE9$ = CHR$(0): BYTE10$ = CHR$(1)

IPN 074-183X
420 ’
430 ’---CALCULATE THE LENGTH BYTE----
440 LTHBYT = CMDLEN + 10: LTHBYT$ = CHR$(LTHBYT)
450 ’
460 ’---CALCULATE THE CHECKSUM----
470 FOR X = 1 TO CMDLEN
480 CHECKSUM = CHECKSUM + ASC(MID$(CMD$, X, 1))
490 NEXT X
500 BYTE1$ = CHR$(DID / 256)
510 BYTE2$ = CHR$(DID MOD 256)
520 CHECKSUM = ASC(BYTE1$) + ASC(BYTE2$) + ASC(STREAM$) + ASC(FUNCTION$) + ASC(BYTE5$)
+ ASC(BYTE6$) + ASC(BYTE7$) + ASC(BYTE8$) + ASC(BYTE9$) + ASC(BYTE10$) + CHECKSUM
530 CHEKSUMM$ = CHR$(FIX(CHECKSUM / 256))
540 CHEKSUML$ = CHR$(CHECKSUM MOD 256)
550 ’---HOST BID FOR LINE / DEVICE BID FOR LINE---
560 ’
570 PRINT #1, ENQ$;
580 I$ = "": RESPONSE$ = ""
590 C = C + 1
600 ON TIMER(TOUT) GOSUB 1000: TIMER ON

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 XTC/C - XTC/2 Operating Manual

610 IF LOC(1) < 1 THEN 610 ELSE TIMER OFF: I$ = INPUT$(1, #1)
620 IF C = 3 THEN 660
630 IF I$ = ACK$ THEN GOTO 580
640 IF I$ = NAK$ THEN RESPONSE$ = "COMMAND NOT ACKNOWLEDGED": GOTO 1010
650 IF I$ = EOT$ THEN 690 ELSE REPOSNSE$ = "DEVICE NOT ACKNOWLEDGED": GOTO 1010
660 IF I$ = ENQ$ THEN 790 ELSE RESPONSE$ = "DEVICE DID NOT BID FOR LINE": GOTO 1010
670 ’
680 ’
690 ’---SEND COMMAND TO XTC/2--
700 ’
710 ’
720 HEADER$ = BYTE1$ + BYTE2$ + STREAM$ + FUNCTION$ + BYTE5$ + BYTE6$ + BYTE7$ + BYTE8$
+ BYTE9$ + BYTE10$
730 PRINT #1, LTHBYT$; HEADER$; CMD$; CHEKSUMM$; CHEKSUML$;
740 GOTO 580
750 ’
760 ’
770 ’---WAIT FOR DATA FROM XTC/2---
780 ’
790 ’---FIND SIZE OF RESPONSE--
800 ’
810 PRINT #1, EOT$;
820 I$ = ""
830 ON TIMER(TOUT) GOSUB 1000: TIMER ON
840 IF LOC(1) < 1 THEN 840 ELSE TIMER OFF: I$ = INPUT$(1, #1)
850 S = ASC(I$): L = S - 13
860 S = S + 2
870 ’
880 ’---RECEIVE RESPONSE TO COMMAND---
890 ’
900 I$ = "": RESPONSE$ = ""
910 FOR R = 1 TO S
920 ON TIMER(TOUT) GOSUB 1000: TIMER ON
930 IF LOC(1) < 1 THEN 930 ELSE TIMER OFF: I$ = INPUT$(1, #1)
940 RESPONSE$ = RESPONSE$ + I$
950 NEXT R
960 PRINT #1, ACK$;
970 RESPONSE$ = MID$(RESPONSE$, 13, L)
980 ’
990 GOTO 1010
1000 TIMER OFF: RESPONSE$ = "RECEIVE TIMEOUT"
1010 PRINT RESPONSE$
1020 ’
IPN 074-183X

1030 GOTO 90

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 XTC/C - XTC/2 Operating Manual

3.8.7 Example of IEEE488 Program

10 ’----------------------XTC/2 GPIB COMMUNICATIONS PROGRAM--------------------
20 ’------THIS PROGRAM IS DESIGNED TO TRANSMIT INDIVIDUAL COMMANDS TO THE XTC/2
AND ACCEPT THE APPROPRIATE RESPONSE FROM THE XTC/2, WRITTEN IN GWBASIC 2.32.
30 ’
40 ’----THE NEXT 5 LINES DEFINE THE IEEE DRIVERS USED AND ARE SPECIFIC TO THE
PARTICULAR IEEE BOARD IN YOUR COMPUTER AND THE LANGUAGE USED--------
50 ’
60 CLEAR ,55000! : IBINIT1 = 55000! : IBINIT2 = IBINIT1 + 3
70 BLOAD "bib.m",IBINIT1
80 CALL IBINIT1(IBFIND,IBTRG,IBCLR,IBPCT,IBSIC,IBLOC,IBPPC,IBBNA,IBONL,IBRSC,
IBSRE,IBRSV,IBPAD,IBSAD,IBIST,IBDMA,IBEOS,IBTMO,IBEOT,IBRDF,IBWRTF)
90 CALL IBINIT2(IBGTS,IBCAC,IBWAIT,IBPOKE,IBWRT,IBWRTA,IBCMD,IBCMDA,IBRD,IBRDA,
IBSTOP,IBRPP,IBRSP,IBDIAG,IBXTRC,IBRDI,IBWRTI,IBRDIA,IBWRTIA,IBSTA%,IBERR%,IBCNT%)
100 ’
110 GPIB$="GPIB0" :CALL IBFIND(GPIB$,GPIB%) ’--OPEN BOARD FOR COMM
120 CALL IBSIC(GPIB%) ’--SEND INTERFACE CLEAR
130 XTC2$="XTC2" : CALL IBFIND(XTC2$,XTC2%) ’--OPEN DEVICE 0
140 V% = &HA ’--SET THE END OF STRING
150 CALL IBEOS(GPIB%,V%) ’ BYTE TO LINE FEED
160 V%=1 : CALL IBEOT(XTC2%,V%) ’--ASSERT EOI ON WRITE
170 V%=12 : CALL IBTMO(XTC2%,V%) ’--SET THREE SEC TIMEOUT
180 INPUT "ENTER COMMAND";COMMAND$ ’--ENTER COMMAND TO XTC/2
190 CALL IBCLR(XTC2%) ’--CLEAR THE XTC/2 COMM
200 GOSUB 240 ’--GOTO TRANSMIT COMMAND
SUBROUTINE.
210 PRINT I$ ’--PRINT XTC/2 RESPONSE
220 GOTO 180 ’--LOOP BACK FOR ANOTHER COMMAND.
230 ’
240 ’----TRANSMIT COMMAND & RECEIVE RESPONSE SUBROUTINE----
250 ’
260 ’----SEND COMMAND MESSAGE STREAM TO THE XTC/2----
270 COMMAND$ = COMMAND$ + CHR$(&HA)
280 CALL IBWRT(XTC2%,COMMAND$)
290 ’
300 ’----RECEIVE RESPONSE MESSAGE FROM THE XTC/2----
310 ’
320 I$=SPACE$(40) : CALL IBRD(XTC2%,I$)
330 IF (IBSTA% AND &H4000) THEN 340 ELSE 350 ’--INDICATE IF A RESPONSE
340 PRINT "RECEIVE TIMEOUT": GOTO 180 ’ IS NOT RECEIVED WITHIN
350 RETURN ’ 3 SECS.

IPN 074-183X
To implement serial polling of the Message Available (MAV) bit the following
lines may be added to the IEEE488 program listed above.
285 CALL IBRSP (XTC2%,SPR%)
287 B = SPR% / 16: B = INT(B)
289 IF B = 1 THEN 290 ELSE 285
After sending a command to the XTC/2 the Status Byte is polled. The response
to the command is retrieved only after the MAV bit is set (2^4 = 16).
To implement serial polling of the Request for Service bit you need only test for
the RQS bit to be set.

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 XTC/C - XTC/2 Operating Manual

For example:
(serial poll) CALL IBRSP (XTC2%,SPR%)
B = SPR% / 64 : B = INT(B)
IF B = 1 THEN (continue prog) ELSE (serial poll)
If the RQS bit is set, the program may then be made to read the first 4 bits of
the Status Byte (2^0 through 2^3) to determine what event generated the
service request. Once this is determined the appropriate action may be taken.

3.9 Co-Deposition (Two Unit Interconnection)

It is possible to control two (or more) sources simultaneously by interconnecting
multiple XTC units. This is most easily accomplished by interconnecting the
inputs and outputs of the units as shown in Figure 3-8 on page 3-40.
Two user installed components are suggested. An "External Start" switch is
used to synchronize the initiation of the two units' films by simultaneously
applying a signal to the START input on the System I/O. The relay inverter is
used to ensure that both units enter the DEPOSIT state simultaneously.
When using the suggested configuration:
Š A STOP condition in either unit stops the other unit. Pushing the STOP key
on either instrument stops both instruments.
Š The unit that first reaches FINAL THK triggers the End Deposit input of the
other unit.
Š The unit designated "slave" must be programmed to reach the end of the
SOAK 2 state before the "master" to avoid a delay upon the termination of
the Soak Hold.
Š The operator must ensure that both units are in the READY state before
IPN 074-183X

pressing the External Start Switch.

Š If a STOP is encountered and a rework layer is not desired (see section 4.4
on page 4-10), a RESET command must be individually given to each unit.
Š If there is material cross sensitivity (if an instrument's transducer receives
material from more than one source) the TOOLING or FINAL THK
parameter(s) must be adjusted to account for this condition.
Š It may be necessary to adjust the Z-Ratio to account for the mixing of
materials on the sensors. This is especially important if maintaining
composition over extended runs is critical.

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 XTC/C - XTC/2 Operating Manual

Figure 3-8 Interconnecting Two XTC/2 Units for Co-Deposition

IPN 074-183X

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 XTC/C - XTC/2 Operating Manual

Chapter 4
Programming System Operation Details

4.1 State and Measurement System Sequencing

The following pages give an overview of the instrument’s operational flow.
There are only three basic execution loops; two of which are essentially
independent: 1) the Display Loop; and 2) the Measurement and Control
Processing Loop. The third loop, State Processing, is, however, the most visible
to the operator as it directs the instrument’s interaction with the coating system.
Because of the time critical nature of the Measurement and Control Loop it may
be thought of as the essence of the instrument with the state sequencing and
display functions nested within its operation. The following symbols are used in
these flow charts:
Figure 4-1 Symbols Used in Flow Charts

NOTE: The flow diagrams presented, while generally accurate, are not
complete from the standpoint of containing enough information to cover
all possible eventualities. They are presented as a means of quick
overview of the instrument’s operations.
IPN 074-183X

4-1
 XTC/C - XTC/2 Operating Manual

Figure 4-2 State Diagram for a Film

IPN 074-183X

4-2
 XTC/C - XTC/2 Operating Manual

Figure 4-3 State Diagram for a Film (continued)

IPN 074-183X

4-3
 XTC/C - XTC/2 Operating Manual

Figure 4-4 Display Loop

The Measurement and Control Loop is characterized by its time-critical nature.

No matter what else is happening, the instrument will measure the crystal’s
frequency and update the Control Loop voltage and all other outputs every 250
milliseconds.
Cable compensation processing is used to match the crystal, transducer, feed
through and in-vacuum cables to the drive circuit.

IPN 074-183X
Sweep processing frequency scans the system for the fundamental resonance
of the crystal. Once this resonance is found normal frequency tracking is
implemented.

4-4
 XTC/C - XTC/2 Operating Manual

Figure 4-5 Measurement and Control Processing Loop

IPN 074-183X

4-5
 XTC/C - XTC/2 Operating Manual

4.2 State Descriptions and Parameter Limits

Operating the XTC as a film thickness/rate controller requires programing the
film sequence parameters. A film sequence begins with a START command
and ends when the film in process reaches the idle state. Any process control
that occurs between these events is determined by the values programmed in
the possible parameters. A film sequence consists of many possible states, with
a state being defined as one process event. These states are described below;
also, see Figure 4-2 on page 4-2. The parameters that affect each state are
listed in brackets at the end of the state description.
Table 4-1 State Descriptions

STATE CONDITION RELAY CONTACT STATUS

Source Sensor Feed
Shutter Shutter
NOTE: 1 through 7 are Pre-Deposit States.
1.READY Will accept a START command. Open Open Open
2.SELECT Instrument advances to next state Open Open Open
CRUCIBLE/SWITCH when "crucible in position" input is
CRYSTAL low. If IDLE PWR of previous layer
is not equal to zero, power is set to
zero before crucible position
changes. If a sensor other than the
one last used is selected, then the
switch to that sensor will occur.
[Crucible #, Sensor #, Source #]
3.RISE TIME 1 Source rising to Soak Power 1 Open Open Open
level. Rise Time 1]
4.SOAK TIME 1 Source maintained at Soak Power Open Open Open
1 level. [Soak Time 1, Soak Power
1]

IPN 074-183X
5.RISE TIME 2 Source rising to Soak Power 2 Open Open Open
(feed ramp) level. [Rise Time 2]
6.SOAK TIME 2 Source maintained at Soak Power Open Open Closed
(feed soak) 2 level. [Soak Time 2, Soak Power
2]
7.SOAK HOLD Source maintained at Soak Power Open Open Open
2 level. [Soak Hold Input]
NOTE: 8 through 14 are Deposit states.
8.SHUTTER DELAY Rate control. Advances to Deposit Open Closed Open
State once the Source is in Rate
Control within 5% [Shutr Dly Y]
9.DEPOSIT Rate control. [Dep Rate, Final Thk, Closed Closed Open
Ctl Gain, Ctl Tc, Ctl Dt]

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 XTC/C - XTC/2 Operating Manual

Table 4-1 State Descriptions (continued)

STATE CONDITION RELAY CONTACT STATUS

Source Sensor Feed
Shutter Shutter
10.RATE RAMP Rate control, desired rate Closed Closed Open
TIME changing. [Thick Spt, New Rate,
R.Ramp Time]
11.RATEWATCHER Rate control. [Sample %] Closed Closed Open
(SAMPLE)
12.RATEWATCHER Constant power, based on last Closed Open Open
(HOLD) sample’s average power. [Hold
Time]
13.MANUAL Source power controlled by hand Closed Closed Open
held controller.
14.TIME-POWER Crystal failed; source maintained at Closed Closed Open
average control power prior to
crystal failure. [Time Pwr Y]
NOTE: 15 through 16 are Post-Deposit states.
15.IDLE RAMP Source changing to Idle Power. Open Open Open
[Idle Ramp]
16a. IDLE POWER Source maintained at zero power; Open Open Open
(=0%) will accept a START command.
[Idle Pwr]
16b. IDLE POWER Source resting at Idle Power; will Open Open Open
(>0%) accept a START command.
NOTE: The STOP state—instrument will accept a START provided a Crystal Fail has
not occurred. See also section 4.16 on page 4-26.
IPN 074-183X

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The following variable parameters and their limits are listed below. If a value
outside the stated limits is attempted, the message ERR 1 is displayed.
Table 4-2 Limits for Film Parameters

PARAMETER LIMITS UNITS

Rise Time 1, 2 00:00 - 99:59 MIN:SEC
Soak PWR 1, 2 0.0 - 100 %
Soak Time 1, 2 00:00 - 99:59 MIN:SEC
Shutr DLY Yes or No --
NEW RATE 0.000 - 999.9 KÅ
R RAMP TIME 00:00 - 99:59 MIN:SEC
IDLE RAMP 00:00 - 99:59 MIN:SEC
IDLE PWR 0.0 - 100 %
TIME PWR Yes or No --
XTAL SWCH S, Q 0-9 Whole Numbers
TOOL FACT 1,2 10.0 - 500 % (see note 1)
DEP RATE 0.000 - 999.9 Å/SEC
FINAL THK 0.000 - 999.9 KÅ
THK SPT 0.000 - 999.9 KÅ
DENSITY 0.500 - 99.99 GM/CC
Z-RATIO 0.100 - 9.999 --
SENSOR # 1 or 2 --
SOURCE # 1 or 2 --
CRUCIBLE # 0-8 Whole Numbers (see note 2)
CTL GAIN 00.01 - 100.0 (Å/SEC)/%
CTL TC 0.1 - 100 SEC
CTL DT 0.1 - 100 SEC
MAXPWR 0.0 - 100 %

IPN 074-183X
SAMPLE 0 - 99 %
HOLD TIME 00:00 - 99:59 MIN:SEC

Notes:
1. If configured for dual sensor, TOOL FACT 1 applies to primary sensor,
TOOL FACT 2 applies to secondary sensor. If configured for single or CrystalSix
sensor(s), TOOL FACT 1 is used regardles of whether sensor 1 or 2 is active.
2. Set to 0 for single crucible operation. If non-zero, instrument waits until Crucible Valid
input goes low before going into Rise.

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4.3 Alarms and Stops

There are a number of unusual instrument situations that may require operator
attention. These situations are detected and then treated as ALARMS or if very
serious, STOPS.
Both alarms and stops are indicated by a separate relay closure. An alarm
condition is not fatal, the instrument will continue the layer or process to normal
termination. A STOP is fatal, immediately halting the process. If desired, the
user may set the STOP ON ALARM configuration switch (see section 2.6.2 on
page 2-19) to configure the instrument to treat an ALARM the same as STOP;
i.e., halting processing upon detection of the abnormal condition.

4.3.1 Alarms
The following conditions are considered ALARMS by the instrument and close
the ALARM RELAY.
Š Crucible hearth selection is not validated by the CRUCIBLE VALID input
within 30 seconds.
Š Rate control not established during the first 60 seconds of SHUTTER
DELAY (or 20X CTL TC if PID loop is used).
Š Rate has been out of control in DEPOSIT for 60 seconds (or 20X CTL TC if
PID loop is used).
Š The source power has constantly exceeded the MAX PWR parameter for 5
seconds. This is also indicated by the MAX POWER annunciator blinking.

4.3.2 Stops
The following actions or conditions produce a STOP state. This condition is
indicated by the STOP annunciator on the XTC/2 or the STOP LED on the
IPN 074-183X

XTC/C and the closure of the STOP relay.

Š Pressing the front panel switch on the XTC/2.
Š Activating the STOP external input.
Š A CRYSTAL FAIL detected during any pre-deposit phase (when crystal
switching is not available).
Š A CRYSTAL FAIL detected during the DEPOSIT state if the TIME PWR
parameter is set to N (when crystal switching is not available).
Š Following the POST-DEPOSIT states of a layer that completed the
DEPOSIT state in TIME PWR.
Š Any of the ALARM conditions listed in Section 4.3.1 if the STOP ON
ALARM or STOP ON MAX PWR configuration switch is activated.

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4.4 Recovering From "STOPS"

These instruments have the ability to complete a process (recover) from a
STOP without manually reprogramming any film or process parameters.
Recovery from a STOP (generated by an operator or any machine induced
condition) requires only that the START command be given (be sure that the
CONTINUE annunciator is visible on the display). The film in process at the
time of the STOP will again be executed from the beginning, but the displayed
thickness will not be "zeroed" upon reentry of the DEPOSIT state. Instead, the
thickness that was accumulated at the time of the generation of the STOP will
be used. Thickness will accumulate in the normal fashion from that point. All
processing will occur in the normal fashion from the reentry of the deposit state,
forward. In this manner a "repair" layer may be added to the previous run to
bring the film to the specified thickness.
If it is not desired to recover, the process may be reset to the beginning of layer
one by issuing a RESET command prior to a START command. The
CONTINUE annunciator will not be visible on the operating display after the
RESET command is given. This procedure may be used if the layer in question
cannot be successfully repaired by adding a second layer of the same material
to achieve final thickness specification.
NOTE: A RESET command may be given by pressing the front panel reset key
when the display is in the operate mode, or through the remote
communications.

IPN 074-183X

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4.5 Tuning the Control Loop

The function of the control loop parameters is to match the instrument’s reaction
to an error (between the measured deposition rate and the desired rate) to the
time related characteristics of the deposition source and its power supply.
There are three adjustable parameters; CTL GAIN, CTL TC and CTL DT used
to accomplish this. It is convenient to think of sources as falling into two
categories "fast" or "slow". Fast sources use an integrating type controller while
slow sources are better controlled with a PID type. A more extensive discussion
of control loops is presented in section 5.6 on page 5-12. The tuning
parameters are affected by source level, rate, sweep range or beam density,
tooling and source condition.
NOTE: The use of a chart recorder, especially when beginning a new
application is highly recommended. Set the recorder output to "rate"
and use it to monitor the response to small changes in the DEP RATE.
NOTE: If you do not know if the source is fast or slow, it is straight forward to
measure the delay with the chart recorder. Using manual power control,
establish rate and allow it to become steady. When the chart recorder
pen crosses some convenient reference point, increase the source
power a few percent (~5% if possible). Allow the source to again
stabilize. Graph the delay time, as is shown in Figure 5-7 on page 5-13,
to determine if the source is "fast" or "slow". Run the recorder at a chart
speed sufficiently fast to accurately measure time. Delay times greater
than 1 second characterize the source as "slow".

4.5.1 Tuning a Fast Source

A fast source, for the purpose of this discussion, is a deposition source that has
not more than a one second delay (lag) between the control voltage change
(into the source’s power supply) and the measurement system’s ability to sense
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that change has taken place. In general, fast sources are: all electron beam
types (unless a hearth liner is used), some very small filament sources and
sputtering sources.
If the source response has been characterized as "FAST", as suggested in the
NOTES in section 4.5, it is easy to set the INTEGRATING TYPE control
parameters as follows:
CTL DT. . . . . since this is a fast source, set this parameter to 0.1
and leave it there.
CTL TC. . . . . set this parameter to 0.1 and leave it there.

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CTL GAIN . . approximate the process gain by dividing the increase in

deposition rate (Å/sec) by the increase in source power (%). Set
this parameter to this computed value. Optimize this value by
changing the value in use. Remember that increasing the value
of this parameter reduces the controller change for a given error
in the deposition RATE.
NOTE: If satisfactory control cannot be established using only CTL GAIN the
source is probably not a "fast" source.
The response of a system with too little controller gain (its CTL GAIN value is
too large) is characterized as over damped as shown in Figure 4-6. Decrease
the CTL GAIN value until the system oscillates as is shown by the under
damped curve. Proper control is established by an intermediate value that
approximates the critically damped curve.
Figure 4-6 Examples of Damped Curves

4.5.2 Tuning a Slow Source

IPN 074-183X
A slow source, for the purpose of this discussion, is a deposition source that
has more than a one second delay (lag) between the control voltage change
(into the source’s power supply) and the measurement system’s ability to sense
that change has taken place. Most thermal sources are slow sources. A typical
fast source is an electron beam heated type that does not use a hearth liner.
If the source response has been characterized as "SLOW" (as suggested in the
NOTES in section 4.5 on page 4-11); review section 5.6 on page 5-12 and then
set the PID control parameters as follows:
CTL GAIN = KP, enter this value into the parameter
CTL TC = T1, enter this value into the parameter
CTL DT = L, enter this value into the parameter

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 XTC/C - XTC/2 Operating Manual

As illustrated in Figure 5-7 on page 5-13, the control dead time, L, is the time
delay between a change in the source’s power setting and a noticeable change
in deposition rate. The control time constant, T1 is (T0.632 - L) where T0.632 is
the time between a change in the source’s power setting and the time to
achieve 63.2% of the new equilibrium rate.
KP is then the ratio of the change in rate over the change in source power
setting.

(change in output) ∆Å ⁄ sec

K p = ------------------------------------------------------------------- = --------------------- [1]
(change in control signal) ∆%Pwr
These values may be adjusted slightly in use to optimize the tuning. The tuning
may change because of process variations. Usually CTL TC and CTL DT do
not need to be changed.
NOTE: Remember that increasing the value of CTL GAIN reduces the
controller change for a given rate error.
Figure 4-7 Examples of Delay Settings
IPN 074-183X

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4.5.3 Setting Maximum Power

The MAX PWR parameter is generally used to ensure that no significant
damage can take place when a deposition source under rate control
experiences an unusual event. By placing a limit on the most power allowed to
be applied to the source, serious damage might be avoided if, for example,
material is depleted. Without this protection Rate Control would keep adding
power until the full 100% were applied. This is frequently catastrophic! It is
normal to set this parameter at a value that is 2-5% more than the normal power
required during deposition. Exceeding maximum power can result in a STOP or
Alarm condition; refer to section 4.3 on page 4-9.

4.6 Setting S&Q Parameters

(Soft Crystal Failures)
At some point during deposition the crystal may become unstable or erratic yet
continue to oscillate within the instrument’s acceptable frequency range of 6.0
MHz to 5.0 MHz. The resulting rate control will be poor and thickness
measurements may be inaccurate. By programming non-zero values for S
and/or Q, various improvements in process control can be achieved. The
instrument can be made to automatically switch to a different crystal and
continue the deposition normally, complete the run in the TIME-POWER mode
or even terminate the process whenever the programmed threshold of
instability is exceeded. As the Q and S factors are programmed to larger values
the level of instability tolerated prior to switching is lowered.

IPN 074-183X

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4.6.1 Q-Factor (Quality)

The Q-Factor is a measure of the quality of the rate control of the active
process. When the Q-Factor is activated the instrument senses the amount of
rate deviation from the desired programmed rate. Setting Q between 1 and 9
activates an algorithm which sets threshold limits on allowed rate deviation. If
the rate deviation relative to the programmed rate is greater than the
programmed threshold limit, the Q counter is incremented. If the rate deviation
is less than the programmed threshold, the Q counter is decremented. Q is not
allowed to have negative values. If the Q counter exceeds a value of 50, the
instrument will then automatically crystal switch, complete the process on
TIME-POWER or STOP the process. The quality limits (or band of allowed rate
deviation) are shown in Table 4-3. This deviation is computed on each
individual reading of the crystal during the deposit phase, i.e., every 250 ms.
.

Table 4-3 Quality Limits

Q-Factor Threshold of Rate

Deviation (%)
0 Disabled
1 30.0
2 25.0
3 20.0
4 15.0
5 12.5
6 10.0
7 7.5
8 5.0
9 2.5

Example
IPN 074-183X

If the Programmed rate is: 45 Å/s and the actual rate is: 40 Å/s, then:

45 – 40
Deviation (%) = ------------------- × 100% = 11.1% [2]
45

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 XTC/C - XTC/2 Operating Manual

4.6.2 S-Factor (Stability)

Normally, as material is deposited on a crystal its operating frequency
decreases. It is from this change in frequency (over the measurement time
period) that the instrument derives its thickness measurement and rate control
functions.
There are times when the crystal may become unstable and will experience a
positive frequency shift over the measurement time period. The S-Factor can
then be used as a measure of the crystal’s instability.
When the S-Factor is activated, and a positive frequency shift occurs, the
magnitude of the positive shift is accumulated in the S-register. A limit is placed
on the total cumulative positive frequency shift by programming the S-Factor
between 1 and 9. When the limit is exceeded the instrument will fail the crystal
and effect a CrystalSwitch, Complete on Time Power, or STOP, depending on
the instrument configuration.
Maximum accumulations for selected S-Factors are listed in Table 4-4. To
prevent random noise from accumulating in the S-register a minimum positive
frequency shift of 25 Hz is required.
Table 4-4 Maximum Accumulations for Selected S-Factors

S-Factor Pos. Frequency Accumulation

0 Disabled
1 5000 (max single shift 1250)
2 1000
3 500
4 400
5 200
6 200 (max single shift 100)
7 100

IPN 074-183X
8 100
9 25

There are many reasons for a crystal to exhibit a positive frequency shift. For
example, when a crystal is near the end of its life it is prone to instabilities that
may result in a temporary increase in crystal frequency. Also positive frequency
shifts may occur due to film stress relieving or a film tearing off a crystal.
Additionally, temperature effects may cause positive frequency excursions. A
crystal subjected to temperatures over 100 °C is more sensitive to small
changes in temperature inducing frequency changes. When heat is applied
inside a chamber and/or when the shutter is opened (exposing the crystal to the
hot source), the crystal frequency will shift higher until thermal equilibrium is
obtained. When the active process ends and/or the shutter closes, the crystal
frequency will shift in a negative direction due to cooling.

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Figure 4-8 shows temperature versus frequency relationship for an AT cut

crystal.
Figure 4-8 Frequency Change vs. Temperature for an AT crystal cut at 35°20'

4.6.3 Determining Q and S Values

The Q and S Factors are used to ensure that the evaporation process is always
under the best possible rate control a crystal can provide. The process engineer
can program values between 0 and 9 for these parameters. Thus, when the
primary crystal reaches a point where its behavior is objectionable it will be
disabled and the proper switch/time-power/stop decision made. The tolerance
of instabilities becomes increasingly smaller as Q and S increase towards 9.
They are independent parameters and may be treated one at a time.
If the crystal fails and no backups are available, the TIME PWR parameter
IPN 074-183X

determines whether the process should stop (N) or complete on time-power (Y),
[or crystal switch if a dual or CrystalSix crystal sensor head is employed].
Q and S can be observed when the display is in the operate mode and the LIFE
key is depressed. The value in the S accumulator replaces the TIME display.
When the life key is released, the Q value replaces the S value in the TIME
display for about 1 second.
With a new crystal, the value in the Q accumulator will usually be one or zero if
the Q parameter is programmed properly. As a crystal deteriorates, larger
values will appear as the Q accumulator builds up or counts down. The switch
point occurs when the Q accumulator equals 50. The designated count of 50
requires that the rate deviation instability be sustained for several seconds.
This is so the algorithm does not trip out for short-lived events. The Q

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accumulator does not retain its values, but rather, builds up when the rate
deviation exceeds its set tolerance and counts down to zero when the rate
deviation is within its programmed tolerance band.
The S accumulator shows the total magnitude of only the positive frequency
shifts (in Hz) from the moment the start button is pushed until that film is
completed and the next film layer is started. When the S value exceeds the set
point, the crystal is disabled. Unlike the Q accumulator, the S values are
retained and added to the accumulator whenever the positive frequency shift is
greater than 25 Hz. Table 4.4 shows the accumulated frequency shift required
to trigger the switch.
One problem is E-B gun arcing. If the S value constantly increments during arcs
it usually indicates poor grounding and the S factor should be disabled until this
problem is corrected.
Improved rate and thickness information results from programming non-zero
values for Q and S. The trade off is between improved process control and
lower crystal utilization. By observing the behavior on the operating display a
determination can be made, after several runs, whether or not the programmed
values provide a desirable compromise.
INFICON’s laboratory experiments have shown the following values to be
useful and they can serve as general guidelines.
Table 4-5 Representative S and Q Factor Values

SOURCE MATERIAL S-FACTOR Q-FACTOR

2" E-B gun w/liner Cu 7 7
2" E-B gun Cu 5 7
1-1/8" E-B gun Al 4 4
1-1/8" E-B gun Ni 4 3
Integral W-Al2O3 Cu 6 7

IPN 074-183X
If the process/crystal behavior is unknown and you want to employ the Q and
S factors, start with S = Q = 5 and watch their behavior on the display by
pressing the LIFE switch. Monitor and fine tune these parameters until the
desired level of rate control is ensured.
Often during process setup, the initial settings of the Q factor may soft fail the
crystal sensor. This can be caused by process delays in getting the system
under control (i.e., slow response sources or SOAK2 power levels poorly set).
The crystal sensor’s state of soft failure can be cleared or reset by changing or
re-entering the value of the Q or S factor parameter.

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For example, if the Q factor parameter has a value of 5 and the rate control
varies by more than ±12.5% this causes the Q counter to increment. When it
reaches the value of 50 the crystal is "Soft Failed" due to the crystal quality
algorithm. This "Q" failed crystal can be cleared by re-entering the parameter
value 5 for the Q factor parameter or by changing it to another value.

4.7 Rate Ramps

Each film program includes a rate change parameter. It may be used to
generate a precise linear variation in the evaporation rate. "Rate Ramps"
execute during the deposit state of the film. They are initiated when the THICK
STP parameter of the film program is reached. If the rate ramp state terminates
before the film reaches FINAL THK, the instrument will return to the deposit
phase.
The slope of a rate ramp is determined by the following equation: delta rate per
sec = (NEW RATE - DEP RATE) divided by RAMP TIME. If a ramp parameter
is changed during the ramp, a new slope will be calculated, taking into
consideration the time the ramp has already been in process.

4.7.1 Rate Ramp to Zero Rate

It is sometimes desirable to ramp to zero rate for alloy phasing purposes,
completing the film processing as if a final thickness had been achieved. Rate
ramps, however, are ordinarily deleted by entering zero for the NEW RATE.
Therefore, in order to implement this type of film termination, program the NEW
RATE value of the rate ramp to 0.1 Å/sec. When this rate value is achieved, the
film program will proceed as if a FINAL THK limit had been reached.
While a rate ramp is being processed, the DEP RATE parameter’s internal
value is continuously updated to match the slope of the Rate Ramp.
NOTE: If the TIME-POWER state is entered, a rate ramp will not be executed;
IPN 074-183X

with the film completing at the programmed FINAL THK.

4.8 Use of the Hand Controller (Option)

A hand held controller is provided as an option. The controller serves as a wired
remote to manually control power, switch crystals and produce a STOP.
The controller is attached to the instrument with a coiled cord and attaches with
a modular plug to the front panel of the instrument. The POWER/STOP switch
located at the top of the controller is asymmetrical to increase awareness of the
direction of power increment and decrement.
Power is affected (only when in Manual mode) by moving the POWER/STOP
switch laterally. A STOP is produced by plunging the POWER/STOP switch
down.

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When in READY, a crystal switch is activated by depressing the red button on

the body of the controller. This action alternates the active crystal of a dual head
configuration or advances the active crystal of a CrystalSix to the next available
good crystal. This may be done any time the instrument is not in STOP.
NOTE: Upon leaving the MANUAL POWER state the instrument enters the
DEPOSIT state. The deposition will terminate if the FINAL THK
parameter value has been exceeded.
The ship kit includes a convenience hook for the controller that can be attached
to the instrument or other accessible location.

4.9 Setting the Soak and Idle Power Levels

These instruments provide 0 to +/- 10 Volts source power control from the
SOURCE # connectors on the rear panel. The voltage output is proportional to
the percent power display with 50% power outputting 5 volts. The control
voltage polarity is set by the appropriate configuration switch, refer to section
2.6.2 on page 2-19
NOTE: The maximum voltage output is limited by the value of the MAX PWR
parameter of each film.

4.9.1 Setting Soak Power 1 Parameters

SOAK PWR 1 is typically set at a level that produces a source temperature just
below significant evaporation. This is easily translated into a power percentage
(SOAK PWR 1) with the help of the hand held controller or the keys
when in manual power mode. Slowly bring the power level to a level where
melting is just beginning and then note the power percentage value on the LCD
display. Use this value for the SOAK PWR 1 setting. This power level may also
be used in fast coaters for a non-zero Idle Power. Set the associated Rise Time
and Soak Time to insure that the melting does not cause violent turbulence but

IPN 074-183X
does not waste excessive time.

4.9.2 Setting Soak Power 2 Parameters

SOAK PWR 2 is typically set at a level that is just below the power that is used
for maintaining the selected evaporation rate. This is determined by manually
bringing the power level up to the desired rate and then entering automatic rate
control. Allow the source to stabilize, then note the average power on the
display. Use this value or one slightly lower for the SOAK PWR 2 value. Set the
associated rise and soak times long enough to insure that the melting does not
cause violent spattering, but short enough that expensive materials are not
wasted.

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4.9.3 Setting Idle Power Parameters

After a deposit has completed, it may be necessary to slowly reduce the
source’s power to zero or to some non-zero value. The IDLE RAMP parameter
defines the time spent in linearly tapering the power from the value at the end
of deposit to the IDLE PWR value.

4.10 Implementing RateWatcher

It is easy to set up to automatically sample the deposition rate periodically and
then maintain the proper source power level necessary to keep the Auto Control
Rate at the set point for extended periods of time. With inherently stable
deposition sources; such as the planar magnetron, an occasional check of the
rate (with the associated automatic recomputation of the necessary power
level) is all that is needed.
This "sample and hold" type of control can supersede the fully active type of
rate control that normally limits the utility of the crystal monitor for in-line or load
locked systems.
The RateWatcher feature requires a two parameter entry.
First, the Process Engineer must decide on the SAMPLE percent. This
parameter sets the accuracy that must be maintained over the 5 second
interval.
NOTE: The minimum accuracy range settings are internally limited to 0.5 Å/sec
difference between the setpoint and the just sampled rate. This avoids
unnecessary power changes.
Second, the HOLD TIME must be programmed. This is the length of time
between the completion of the last sample period (or the achievement of rate
control) and the initiation of the next sample period. The process engineer may
set the interval up to a maximum of 99:59 for automatic operation. If longer
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intervals or periodic samples are needed SAMPLE INITIATE and SAMPLE

INHIBIT inputs are available on the SYSTEM I/O connector. During HOLD
periods, thickness is accumulated at the Auto Control Rate (DEP RATE) and
power is held at the internally computed Time-Power value. During SAMPLE
periods, the power will not be changed unless two consecutive samples fall out
of the specified accuracy range (1-99%).
Entering a HOLD TIME of 00:00 disables the RateWatcher feature.
NOTE: The RateWatcher function is disabled if the sensor type is configured
for a Dual or CrystalSix sensor head. See section 4.15.1 on page 4-25.

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4.11 Crystal Fail

Whenever the ModeLock measurement system is unable to effectively identify
and drive a monitor crystal, a special set of sweep and find instructions are
executed. This sequence takes up to five seconds as it is repeated a number of
times. This sequence of events is depicted in the "Measurement and Control
Processing Loop" flow chart, Figure 4-5 on page 4-5.
If the measurement system is unable to recover, the message XTAL FAIL is
displayed. The action next taken by the instrument is dependent on the value
of the TIME-POWER parameter as described in section 4.12 on page 4-22.
Sometimes a monitor crystal will spontaneously recover if its temperature is
reduced or sufficient time passes and the stress induced by the coating is
naturally relieved. Even with the XTAL FAIL message displayed the
measurement system will continue to attempt to find the fundamental resonant
mode’s frequency. This message will disappear when the crystal recovers or is
replaced.
Additional information on crystal failures is presented in section 6.3.2 on page
6-4. The ModeLock oscillator is more fully explained in section 5.5.5 on page
5-9 and section 5.5.6 on page 5-11.

4.12 Completing on TIME-POWER

When used as a controller this instrument has the ability to complete a
deposition normally if a crystal fails during the deposit phase. Depending on the
setting of the TIME-PWR parameter, the unit will either complete on
TIME-POWER (Y), or STOP (N) on crystal fail. When set up to complete on
TIME-POWER and a crystal fail is encountered the instrument will establish an
average power-based on the values output to the source prior to the crystal
failure. This average power is used while thickness is accumulated at the DEP
RATE. The deposition will terminate normally. The thickness accuracy will

IPN 074-183X
depend on the duration of the TIME-POWER phase. A shorter duration of
TIME-POWER will increase the Final Thickness accuracy; longer durations will
decrease accuracy. This feature has no utility when used in a monitor only
situation.

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4.13 Crystal Fail Inhibit

In many coating plants the crystal fail output relay closure is given major
importance and causes the entire system to shut down. This can cause
problems when the crystal is changed as part of the normal reloading
procedure. This potential conflict is resolved by utilizing the crystal fail inhibit
input; refer to section 2.6.4 on page 2-23. When this input is activated the
crystal fail relay will not close on crystal fail.
The crystal fail inhibit input is ignored if the instrument is in the Deposit state.
The front panel messages and instrument operation still work normally. The
operator may now change the crystal and verify that it is operating without
inducing a major process interruption.
The crystal fail inhibit input may be switched manually or automatically by using
the END DEPOSIT relay; refer to section 2.6.5 on page 2-24.

4.14 Shutter Delay

SHUTR DLY is used to establish rate control before exposing the substrates to
the evaporant. The sensing crystal must be exposed to the deposition source
during the Shutter Delay state for this to be accomplished. Shutter delay is
accessed by programming the SHUTR DLY parameter to Y (yes). The control
loop attempts to establish rate control at the end of the pre-deposition film
states. However, the source shutter opening is delayed for a period of time to
insure stable rate control. When rate control has been established (within 5%
or 0.5 Å of the DEP RATE value), the shutter opens, the accumulated thickness
is zeroed, and the substrates are immediately exposed to an evaporant that is
under tight rate control. With proper adjustment of the control loop parameters,
the delay time can be kept to a minimum. If the instrument is unable to establish
rate control in 60 seconds (or 20x CTL TC if the PID Loop is used and CTL TC
is greater than 3.0), the alarm relay on the AUX I/O will close. Also the
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instrument may be set up to automatically STOP on this alarm condition if the

appropriate configuration switch is turned on; refer to section 2.6.2 on page
2-19.

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4.15 Crystal Switch Details

A crystal switch will automatically occur when:
Š The instrument is configured for a dual head, a layer is running on the
primary sensor, and the primary crystal fails.
Š The instrument is configured for a CrystalSix, a layer is running, and there
is at least one good crystal left in the carousel when the active crystal fails.
Š The instrument is configured for a dual head or single heads, a START is
executed and the designated primary sensor is different than the last sensor
run. This switch will take place before entering a RISE 1 or RISE 2 state.
NOTE: When using a dual head, a layer cannot START if the primary crystal
for that layer is failed, unless the "start layer without backup crystal"
configuration switch is activated; see section 2.6.2 on page 2-19
and section 4.16 on page 4-26.
Š A soft crystal failure is generated; refer to section 4.6 on page 4-14.
A crystal switch will NOT automatically occur:
Š In STOP, READY or IDLE.
Š When the designated primary sensor is already failed at the START of a
layer. A STOP will occur unless the "proceed without backup" configuration
switch is chosen; see section 4.16 on page 4-26.
Š When the secondary crystal of a dual head fails. (A TIME-POWER or STOP
will occur.)
A crystal switch can be manually executed via the front panel, handheld
controller, or remote communications any time the system is configured for
Dual or CrystalSix.
NOTE: The primary sensor # of a Dual head is the sensor programmed in the
film’s parameters. The secondary sensor is the other sensor. On the
XTC/2 Display, the active crystal’s number is illuminated. If the primary

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crystal has failed, the active crystal’s number (backup) flashes to
indicate that there is no backup.
CrystalSix crystals are all read on power up to determine how many good
crystals are present. On power up, when configured for a CrystalSix sensor, the
XTC/2 display will be blank except for the CrystalSwitch and STOP
annunciators. Once the initialization is complete the XTC/2 will automatically go
to the Operate Display. On the XTC/2 Display, the annunciators of the good
crystals are illuminated, with the active crystal’s number flashing. The XTC/2
will identify a CrystalSix switcher fail by turning off all the crystal annunciators.
A CrystalSix switcher fail will occur if the CrystalSix carousel fails to rotate
properly.
NOTE: The crystal fail annunciator is illuminated when no more good crystals
remain for both the XTC/2 and the XTC/C.

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4.15.1 Sensor Shutter / CrystalSwitch Output

The function of the Sensor Shutter outputs depend on the Configuration switch
settings on the back of the unit. (Refer to Table 2-2 on page 2-20 for a list of
configuration switch setting definitions.) If a single head sensor type is chosen
the Sensor Shutter relay contacts are set to be Normally Open. The Sensor
Shutter relay contacts close (opening the shutter) when entering the Deposit
state, Shutter Delay state, or during the Sample period of the RateWatcher
function.
If a Dual sensor type is chosen, the Sensor Shutter relay now functions as a
CrystalSwitch relay. The contacts are set to be Normally Open. The Sensor
Shutter relay contacts close upon initiating a CrystalSwitch. This actuates the
shutter mechanism, toggling the shutter, exposing Sensor 2’s crystal and
covering Sensor 1’s crystal. A second CrystalSwitch function will open the
contacts, toggling the shutter, exposing Sensor 1’s crystal and covering Sensor
2’s crystal. Due to the change in function of the relay output from that of Sensor
Shutter to one of CrystalSwitch, RateWatcher is disabled when the unit is
configured for a Dual sensor.
NOTE: When configured for a dual sensor, sensor 1’s shutter relay is used for
the CrystalSwitch function. Sensor 2’s shutter relay is disabled.
If a CrystalSix sensor type is chosen the Sensor Shutter relay functions as a
CrystalSwitch relay. The operation of the relay contacts is different than when
the sensor is a Dual head. In this case the relay contacts are pulsed closed for
one second, opened for one second, closed for one second, then opened.
When connected properly, the first one second closure will advance the
CrystalSix carousel into an intermediate position between two crystals.
Opening the closure for one second allows the ratchet mechanism to relax
whereupon the second contact closure advances the next crystal into the
proper position. The intermediate position between two crystals is important in
automatically verifying the proper operation of the CrystalSix sensor head. Due
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to the change in function of the relay output from that of Sensor Shutter to one
of CrystalSwitch, RateWatcher is disabled when the unit is configured for a
CrystalSix sensor.

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4.16 Start Layer Without

Backup Crystal Configuration
These instruments allow the option of automatically continuing a Process with
the "backup" sensor. In normal operation if the sensor fails during the Process,
the Process is automatically stopped and the crystal must be replaced in order
to continue. With Configuration Switch 11 on, the user is allowed to continue the
Process with the second, "backup", sensor. All CrystalSwitching or Complete
on Time Power functions work normally. The following examples further
elucidate various situations.
For example if using two single sensors and a crystal fails during the Layer, the
Layer will Complete on Time Power or STOP, XTAL FAIL, whichever is
programmed. If Configuration Switch 11 is on, the "backup" crystal is good, and
START is pressed, either the Layer will be continued, or the next Layer is
started.
If using a Dual head and a crystal fails while the Layer is in Deposit, the
instrument will "crystal switch" to the secondary crystal of the Dual Head and
complete the Layer. Then, with Configuration Switch 11 on, pressing START
will begin the next Layer in the Process using the "backup" crystal, even though
that Layer’s primary crystal is failed. When using a CrystalSix sensor, all 6
crystals must fail prior to using the "backup" crystal.
If using two single sensors or a dual sensor, whenever the "backup" crystal is
in use the XTAL # annunciator will flash. When using a CrystalSix, the
annunciator for the crystal currently in use will flash as always.
Additionally, if the instrument switches to the "backup" crystal during the
Process it will continue using the "backup" crystal until the Process is RESET,
even if the primary crystal is replaced. This may be circumvented by manually
crystal switching to the primary crystal once the failed crystal is replaced.

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4.17 Crystal Life and Starting Frequency

Crystal life is displayed as a percentage of the monitor crystal’s frequency shift
relative to the 1 MHz frequency shift allowed by the instrument. This quantity is
useful as an indicator of when to change the monitor crystal to safeguard
against crystal failures during deposition. It is normal to change a crystal after
a specific amount of crystal life (% change) is consumed.
It is not always possible to use a monitor crystal to 100% of crystal life. Useful
crystal life is highly dependent on the type of material being deposited and the
resulting influence of this material on the quartz monitor crystal. For well
behaved materials, such as copper, at about 100% crystal life the inherent
quality, Q, of the monitor crystal degrades to a point where it is difficult to
maintain a sharp resonance and therefore the ability to measure the monitor
crystal’s frequency deteriorates.
When depositing dielectric or optical materials, the life of a gold, aluminum or
silver quartz monitor crystal is much shorter; as much as 10 to 20%. This is due
to thermal and intrinsic stresses at the quartz-dielectric film interface, which are
usually exacerbated by the poor mechanical strength of the film. For these
materials, the inherent quality of the quartz has very little to do with the monitor
crystal’s failure.
It is normal for a brand new quartz monitor crystal to display a crystal life
anywhere from 0 to 5% due to process variations in producing the crystal.
Naturally, this invites the question: "Is a brand new crystal indicating 5% life
spent inferior to a crystal indicating 1% life spent?"
If a new crystal indicates 5% life spent, it means that either the quartz blank is
slightly thicker than normal (more mechanical robustness), or the gold
electrode is slightly thicker than normal (better thermal and electrical
properties), or both. In either case, its useful life with regard to material
deposition should not be adversely affected. To verify this assertion, laboratory
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testing was performed on crystals which covered the crystal life range in
question. Results indicate that a brand new crystal which indicates 3 to 5% life
spent is just as good, if not better than a crystal indicating 0 to 2% life spent.
As a consequence, it is important to consider the change in crystal life (∆%), not
just the absolute crystal life (%) indicated.

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Chapter 5
Calibration and Measurement

5.1 Importance of Density, Tooling and Z-ratio

The quartz crystal microbalance is capable of precisely measuring the mass
added to the face of the oscillating quartz crystal sensor. The instrument's
knowledge of the density of this added material (specified by the film’s
DENSITY parameter) allows conversion of the mass information into thickness.
In some instances, where highest accuracy is required, it is necessary to make
a density calibration as outlined in section 5.2.
Because the flow of material from a deposition is not uniform, it is necessary to
account for the different amount of material flow onto the sensor compared to
the substrates. This factor is accounted for by the film’s TOOLING parameter.
The tooling factor can be experimentally established by following the guidelines
in section 5.3 on page 5-2.
Z-RATIO is a parameter that corrects the frequency change to thickness
transfer function for the effects of acoustic impedance mismatch between the
crystal and the coated material.

5.2 Determining Density

NOTE: The bulk density values retrieved from the Table of Densities and
Z-ratios, see Appendix A, are sufficiently accurate for most
applications.
Follow the steps below to determine density value:
1 Place a substrate (with proper masking for film thickness measurement)
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adjacent to the sensor, so that the same thickness will be accumulated on

the crystal and this substrate.
2 Set density to the bulk value of the film material or to an approximate value.
3 Set Z-ratio to 1.000 and tooling to 100%.
4 Place a new crystal in the sensor and make a short deposition
(1000-5000 Å), using manual control.
5 After deposition, remove the test substrate and measure the film thickness
with either a multiple beam interferometer or a stylus-type profilometer.

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6 Determine the new density value with the following equation:

Tx
Density ( gm ⁄ cm ) = D 1 ⎛ -------⎞
3
[1]
⎝ T m⎠

where:
D1 = Initial density setting
Tx = Thickness reading on the display
Tm = Measured thickness
7 A quick check of the calculated density may be made by programming the
instrument with the new density value and observing that the displayed
thickness is equal to the measured thickness, provided that the instrument's
thickness has not been zeroed between the test deposition and entering the
calculated density.
NOTE: Slight adjustment of DENSITY may be necessary in order to
achieve Tx = Tm.

5.3 Determining Tooling

1 Place a test substrate in the system's substrate holder.
2 Make a short deposition and determine actual thickness.
3 Calculate tooling from the relationship:
Tm
Tooling (%) = TF i ⎛⎝ -------⎞⎠ [2]
Tx

where
Tm = Actual thickness at substrate holder

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Tx = Thickness reading on the display
TFi = Initial tooling factor
4 Round off percent tooling to the nearest 0.1 %.
5 When entering this new value for tooling into the program, Tm will equal Tx
if calculations are done properly.
NOTE: It is recommended that a minimum of three separate evaporations be
made when calibrating tooling. Variations in source distribution and
other system factors will contribute to slight thickness variations. An
average value tooling factor should be used for final calibrations.

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5.4 Laboratory Determination of Z-ratio

A list of Z-values for materials commonly used is available in the Table of
Densities and Z-ratios, see Appendix A. For other materials, Z can be
calculated from the following formula:

1
---
⎛ d q µ q⎞ 2
Z = ⎜ -------------⎟ [3]
⎝ df µf ⎠

1
- ---
5 2
Z = 9.378 × 10 ( d f µ f ) [4]

where:
df = density (g/cm3) of deposited film
µf = shear modulus (dynes/cm2) of deposited film
dq = density of quartz (crystal) (2.649 gm/cm3)
µq = shear modulus of quartz (crystal) (3.32 x 1011 dynes/cm2 )
The densities and shear moduli of many materials can be found in a number of
handbooks.
Laboratory results indicate that Z-values of materials in thin-film form are very
close to the bulk values. However, for high stress producing materials, Z-values
of thin films are slightly smaller than those of the bulk materials. For
applications that require more precise calibration, the following direct method
is suggested:
1 Using the calibrated density and 100% tooling, make a deposition such that
the percent crystal life display will read approximately 50%, or near the end
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of crystal life for the particular material, whichever is smaller.

2 Place a new substrate next to the sensor and make a second, short
deposition (1000 - 5000 Å).
3 Determine the actual thickness on the substrate (as suggested in density
calibration).
4 Adjust Z-ratio value in the instrument to bring the thickness reading in
agreement with actual thickness.

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For multiple layer deposition (for example, two layers), the Z-value used for the
second layer is determined by the relative thickness of the two layers. For most
applications the following three rules will provide reasonable accuracies:
Š If the thickness of layer 1 is large compared to layer 2, use material 1’s
Z-value for both layers.
Š If the thickness of layer 1 is thin compared to layer 2, use material 2’s
Z-value for both layers.
Š If the thickness of both layers is similar, use a value for Z-ratio which is the
weighted average of the two Z values for deposition of layer 2 and
subsequent layers.

5.5 Measurement Theory

5.5.1 Basics
The Quartz Crystal deposition Monitor, or QCM, utilizes the piezoelectric
sensitivity of a quartz monitor crystal’s resonance to added mass. The QCM
uses this mass sensitivity to control the deposition rate and final thickness of a
vacuum deposition. When a voltage is applied across the faces of a properly
shaped piezoelectric crystal, the crystal is distorted and changes shape in
proportion to the applied voltage. At certain discrete frequencies of applied
voltage, a condition of very sharp electro-mechanical resonance is
encountered. When mass is added to the face of a resonating quartz crystal,
the frequency of these resonances are reduced. This change in frequency is
very repeatable and is precisely understood for specific oscillating modes of
quartz. This heuristically easy to understand phenomenon is the basis of an
indispensable measurement and process control tool that can easily detect the
addition of less than an atomic layer of an adhered foreign material.
In the late 1950’s it was noted by Sauerbrey1,2 and Lostis3 that the change in

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frequency, DF = Fq-Fc, of a quartz crystal with coated (or composite) and
uncoated frequencies, Fc and Fq respectively, is related to the change in mass
from the added material, Mf , as follows:

-------f = (-----------
M ∆F )-
[5]
Mq Fq

where Mq is the mass of the uncoated quartz crystal.

1.G. Z. Sauerbrey, Phys. Verhand .8, 193 (1957)

2.G. Z. Sauerbrey, Z. Phys. 155,206 (1959)
3.P. Lostis, Rev. Opt. 38,1 (1959)

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Simple substitutions lead to the equation that was used with the first “frequency
measurement” instruments:

K ( ∆F )
T f = ---------------- [6]
df

where the film thickness, Tf, is proportional (through K) to the frequency

change, DF, and inversely proportional to the density of the film, df. The
constant, K = Natdq/Fq2; where dq (= 2.649 gm/cm3) is the density of single
crystal quartz and Nat (=166100 Hz cm) is the frequency constant of AT cut
quartz. A crystal with a starting frequency of 6.0 MHz will display a reduction of
its frequency by 2.27 Hz when 1 angstrom of Aluminum (density of 2.77
gm/cm3) is added to its surface. In this manner the thickness of a rigid adlayer
is inferred from the precise measurement of the crystal’s frequency shift. The
quantitative knowledge of this effect provides a means of determining how
much material is being deposited on a substrate in a vacuum system, a
measurement that was not convenient or practical prior to this understanding.

5.5.2 Monitor Crystals

No matter how sophisticated the electronics surrounding it, the essential device
of the deposition monitor is the quartz crystal. The quartz resonator shown in
Figure 5-1 has a frequency response spectrum that is schematically shown in
Figure 5-2. The ordinate represents the magnitude of response, or current flow
of the crystal, at the specified frequency.
Figure 5-1 Quartz Resonator
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The lowest frequency response is primarily a “thickness shear” mode that is

called the fundamental. The characteristic movement of the thickness shear
mode is for displacement to take place parallel to the major monitor crystal
faces. In other words, the faces are displacement antinodes as shown in Figure
5-3. The responses located slightly higher in frequency are called anharmonics;
they are a combination of the thickness shear and thickness twist modes. The
response at about three times the frequency of the fundamental is called the
third quasiharmonic. There are also a series of anharmonics slightly higher in
frequency associated with the quasiharmonic.

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The monitor crystal design depicted in Figure 5-1 is the result of several
significant improvements from the square crystals with fully electroded plane
parallel faces that were first used. The first improvement was to use circular
crystals. This increased symmetry greatly reduced the number of allowed
vibrational modes. The second set of improvements was to contour one face of
the crystal and to reduce the size of the exciting electrode. These
improvements have the effect of trapping the acoustic energy. Reducing the
electrode diameter limits the excitation to the central area. Contouring
dissipates the energy of the traveling acoustic wave before it reaches the edge
of the crystal. Energy is not reflected back to the center where it can interfere
with other newly launched waves, essentially making a small crystal appear to
behave as though it is infinite in extent. With the crystal’s vibrations restricted
to the center, it is practical to clamp the outer edges of the crystal to a holder
and not produce any undesirable effects. Contouring also reduces the intensity
of response of the generally unwanted anharmonic modes; hence, the potential
for an oscillator to sustain an unwanted oscillation is substantially reduced.
The use of an adhesion layer has improved the electrode-to-quartz bonding,
reducing “rate spikes” caused by micro-tears between the electrode and the
quartz as film stress rises. These micro-tears leave portions of the deposited
film unattached and therefore unable to participate in the oscillation. These free
portions are no longer detected and the wrong thickness consequently inferred.
Figure 5-2 Frequency Response Spectrum
Log of relative intensity (Admittance)

1
10

1
100

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17.792 MHz 278 ohm

18.133 MHz 350 ohm

17.957 MHz 311 ohm
6.333 MHz 142 ohm
6.337 MHz 105 ohm
6.348 MHz 322 ohm
6.419 MHz 350 ohm
5.981 MHz 15 ohm
6.153 MHz 50 ohm
6.194 MHz 40 ohm

1
1000

6 7 17 18

Frequency (in MHz)

The “AT” resonator is usually chosen for deposition monitoring because at room
temperature it can be made to exhibit a very small frequency change due to
temperature changes. Since there is presently no way to separate the
frequency change caused by added mass (which is negative) or even the
frequency changes caused by temperature gradients across the crystal or film

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induced stresses, it is essential to minimize these temperature-induced

changes. It is only in this way that small changes in mass can be measured
accurately.
Figure 5-3 Thickness Shear Displacement

E X2
displacement node
X
1

X
3

5.5.3 Period Measurement Technique

Although instruments using equation [6] were very useful, it was soon noted
they had a very limited range of accuracy, typically holding accuracy for ∆F less
than 0.02 Fq. In 1961 it was recognized by Behrndt4 that:

( Tc – Tq )
- = (-----------
M ∆F )-
-------f = ---------------------- [7]
Mq Tq Fc
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where Tc and Tq are the periods of oscillation of the crystal with film and the
bare crystal respectively. The period measurement technique was the
outgrowth of two factors; first, the digital implementation of time measurement,
and second, the recognition of the mathematically rigorous formulation of the
proportionality between the crystal’s thickness, Iq, and the period of oscillation,
Tq = 1/Fq. Electronically the period measurement technique uses a second
crystal oscillator, or reference oscillator, not affected by the deposition and
usually much higher in frequency than the monitor crystal. This reference
oscillator is used to generate small precision time intervals which are used to
determine the oscillation period of the monitor crystal. This is done by using two
pulse accumulators. The first is used to accumulate a fixed number of cycles,
m, of the monitor crystal. The second is turned on at the same time and

4.K. H. Behrndt, J. Vac. Sci. Technol. 8, 622 (1961)

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accumulates cycles from the reference oscillator until m counts are

accumulated in the first. Since the frequency of the reference is stable and
known, the time to accumulate the m counts is known to an accuracy equal to
± 2/Fr where Fr is the reference oscillator’s frequency. The monitor crystal’s
period is (n/Fr)/m where n is the number of counts in the second accumulator.
The precision of the measurement is determined by the speed of the reference
clock and the length of the gate time (which is set by the size of m). Increasing
one or both of these leads to improved measurement precision.
Having a high frequency reference oscillator is important for rapid
measurements (which require short gating times), low deposition rates and low
density materials. All of these require high time precision to resolve the small,
mass induced frequency shifts between measurements. When the change of a
monitor crystal’s frequency between measurements is small, that is, on the
same order of size as the measurement precision, it is not possible to establish
quality rate control. The uncertainty of the measurement injects more noise into
the control loop, which can be counteracted only by longer time constants. Long
time constants cause the correction of rate errors to be very slow, resulting in
relatively long term deviations from the desired rate. These deviations may not
be important for some simple films, but can cause unacceptable errors in the
production of critical films such as optical filters or very thin layered
superlattices grown at low rates. In many cases the desired properties of these
films can be lost if the layer to layer reproducibility exceeds one, or two,
percent. Ultimately, the practical stability and frequency of the reference
oscillator limits the precision of measurement for conventional instrumentation.

5.5.4 Z-Match Technique

After learning of fundamental work by Miller and Bolef 5, which rigorously
treated the resonating quartz and deposited film system as a one-dimensional
continuous acoustic resonator, Lu and Lewis6 developed the simplifying
Z-Match equation in 1972. Advances in electronics taking place at the same

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time, namely the micro-processor, made it practical to solve the Z-Match
equation in “real-time”. Most deposition process controllers sold today use this
sophisticated equation that takes into account the acoustic properties of the
resonating quartz and film system as shown in equation [8].

N at d q π ( Fq – Fc )
T f = ⎛ ------------------⎞ arctan ⎛ Z tan --------------------------- ⎞ [8]
⎝ πd f F c Z⎠ ⎝ Fq ⎠

where Z=(dquq/dfuf)1/2 is the acoustic impedance ratio and uq and uf are the
shear moduli of the quartz and film, respectively. Finally, there was a
fundamental understanding of the frequency-to-thickness conversion that could

5.J. G. Miller and D. I. Bolef, J. Appl. Phys. 39, 5815, 4589 (1968)
6.C. Lu and O. Lewis, J Appl. Phys. 43, 4385 (1972)

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yield theoretically correct results in a time frame that was practical for process
control. To achieve this new level of accuracy requires only that the user enter
an additional material parameter, Z, for the film being deposited. This equation
has been tested for a number of materials, and has been found to be valid for
frequency shifts equivalent to Ff = 0.4Fq. Keep in mind that equation [6] was
valid to only 0.02Fq and equation [7] was valid only to ~0.05Fq.

5.5.5 Active Oscillator

All of the instrumentation developed to date has relied on the use of an active
oscillator circuit, generally the type schematically shown in Figure 5-4. This
circuit actively keeps the crystal in resonance, so that any type of period or
frequency measurement may be made. In this type of circuit, oscillation is
sustained as long as the gain provided by the amplifiers is sufficient to offset
losses in the crystal and circuit and the crystal can provide the required phase
shift.
Figure 5-4 Active Oscillator Circuit
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The basic crystal oscillator’s stability is derived from the rapid change of phase
for a small change in the crystal’s frequency near the series resonance point,
as shown in Figure 5-5.

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Figure 5-5 Crystal Frequency Near Series Resonance Point

The active oscillator circuit is designed so the crystal is required to produce a

phase shift, θ, of 0 degrees, which allows it to operate at the series resonance
point. Long- and short-term frequency stabilities are a property of crystal
oscillators because very small frequency changes are needed to sustain the
phase shift required for oscillation. Frequency stability is provided by the quartz
crystal even though there are long term changes in electrical component values
caused by temperature or aging or short-term noise-induced phase jitter.
As mass is added to a crystal, its electrical characteristics change. Figure 5-6
on page 5-11 is the same plot as Figure 5-5 overlaid with the response of a
heavily loaded crystal. The crystal has lost the steep slope displayed in Figure
5-5. Because the phase slope is less steep, any noise in the oscillator circuit

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translates into a greater frequency shift than that which would be produced with
a new crystal. In the extreme, the basic phase/frequency shape is not
preserved and the crystal is not able to provide a full 90 degrees of phase shift.
The impedance, | Z |, is also noted to rise to an extremely high value. When this
happens it is often more favorable for the oscillator to resonate at one of the
anharmonic frequencies. This condition is sometimes short lived, with the
oscillator switching between the fundamental and anharmonic modes, or it may
continue to oscillate at the anharmonic. This condition is known as mode
hopping and in addition to annoying rate noise can also lead to false termination
of the film because of the apparent frequency change. It is important to note that
the controller will frequently continue to operate under these conditions; in fact
there is no way to tell this has happened except that the film’s thickness is

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suddenly apparently thinner by an amount equivalent to the frequency

difference between the fundamental and the anharmonic that is sustaining the
oscillation.
Figure 5-6 Heavily Loaded Crystal

5.5.6 ModeLock Oscillator

INFICON has created a new technology7 that eliminates the active oscillator
and its limitations. This new system constantly tests the crystal’s response to
an applied frequency in order to not only determine the resonant frequency, but
also to verify that the crystal is oscillating in the desired mode. This new system
is essentially immune to mode hopping and the resulting inaccuracies. It is fast
and accurate, determining the crystal’s frequency to less than .05 Hz at a rate
of 4 times per second. Because of the system’s ability to identify and then
measure particular crystal modes, it is now possible to offer new features that
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take advantage of the additional informational content of these modes.

This “intelligent” measurement system uses the phase/frequency properties of
the quartz crystal to determine the resonant frequency. It operates by applying
a synthesized sine wave of specific frequency to the crystal and measuring the
phase difference between the applied signal’s voltage and the current passing
through the crystal. At series resonance, this phase difference is exactly 0
degrees; that is, the crystal behaves like a pure resistance. By separating the
applied voltage and the current returned from the crystal and monitoring the
output of a phase comparator it is possible to establish whether the applied
frequency is higher or lower than the crystal’s resonance point. At frequencies
well below the fundamental, the crystal’s impedance is capacitive and at

7.US Patent 5,117,192 (May 27 1992)

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frequencies slightly higher than resonance it is inductive in nature. This

information is useful if the resonance frequency of a crystal is unknown. A quick
sweep of frequencies can be undertaken until the output of the phase
comparator changes, marking the resonance event.
For AT crystals we know that the lowest frequency event encountered is the
fundamental. The events slightly higher in frequency are anharmonics. This
information is useful not only for initialization, but also for the rare case when
the instrument loses track of the fundamental. Once the frequency spectrum of
the crystal is determined the instrument’s task is to follow the changing
resonance frequency and to periodically provide a measurement of the
frequency for subsequent conversion to thickness.
The use of the “intelligent” measurement system has a series of very apparent
advantages when compared to the previous generation of active oscillators;
namely immunity from mode hopping, speed of measurement, precision of
measurement, and the ability to measure heavily loaded (damped) crystals.

5.6 Control Loop Theory

The instrumental advances in measurement speed, precision and reliability
would not be complete without a means of translating this improved information
into improved process control. For a deposition process, this means keeping
the deposition rate as close as possible to the desired rate. The purpose of a
control loop is to take the information flow from the measurement system and
to make power corrections that are appropriate to the characteristics of the
particular evaporation source. When properly operating, the control system
translates small errors in the controlled parameter, or rate, into the appropriate
corrections in the manipulated parameter, power. The controller’s ability to
quickly and accurately measure and then react appropriately to the small
changes keeps the process from deviating very far from the set point.
The controller model most commonly chosen for converting error into action is

IPN 074-183X
called PID. In the PID, P stands for proportional, I stands for integral and D
stands for derivative action. Certain aspects of this model will be examined in
detail a little further on.
Knowledge of the responses of the evaporation source can be found by
repetitively observing the system response to a disturbance under a particular
set of controller settings. After observing the response, improved controller
parameters are estimated and then tried again until satisfactory control is
obtained. Control, when it is finally optimized, essentially matches the
parameters of the controller model to the characteristics of the evaporation
source.

5 - 12
 XTC/C - XTC/2 Operating Manual

In general, it is not possible to characterize all processes exactly; some

approximation must be applied. The most common is to assume that the
dynamic characteristics of the process can be represented by a first-order lag
plus a dead time. The Laplace transform for this model (conversion to the s
domain) is approximated as:

Output K p exp ( – L s )
------------------- = -------------------------------- [9]
Input T1 s + 1
Figure 5-7 Response of Process To An Open Loop Step Change
(At t=0 Control Signal is Increased)

Three parameters are determined from the process reaction curve. They are
the steady state gain, Kp, the dead time, L, and the time constant, T1. Several
methods have been proposed to extract the required parameters from the
IPN 074-183X

system response as graphed in Figure 5-7. These are: a one point fit at 63.2%
of the transition (one time constant); a two point exponential fit; and a weighted
least-square-exponential fit. From the above information a process is
sufficiently characterized so that a controller algorithm may be customized.

5 - 13
 XTC/C - XTC/2 Operating Manual

A controller model used extensively is the PID type, shown in Laplace form in
equation [10].

M ( s ) = K c ⎛ 1 + -------- + T d s⎞ Es
1
[10]
⎝ Ti s ⎠

Where
Š M(s) = manipulated variable or power
Š Kc = controller gain (the proportional term)
Š Ti = integral time
Š Td = derivative time
Š E(s) = process error
Figure 5-8 represents the controller algorithm and a process with first order lag
plus a dead time. The process block implicitly includes the dynamics of the
measuring devices and the final control elements, in our case the evaporator
power supply. R(s) represents the rate setpoint. The feedback mechanism is the
error generated by the difference between the measured deposition rate, C(s),
and the rate set point, R(s).
Figure 5-8 PID Controller Block Diagram
deposition
setpoint error rate
R(s) + E(s) C(s)

K p exp ( – L s )
K c ⎛⎝ 1 + -------- + T d s⎞⎠
1
(S) --------------------------------
Ti s T1 s + 1
[controller] [process]

IPN 074-183X
The key to using any control system is to choose the proper values of Kc, Td
and Ti. Optimum control is a somewhat subjective quantity as noted by the
presence of several mathematical definitions as shown below.
The integral of the squared error (ISE) is a commonly proposed criterion of
performance for control systems. It can be described as:

∫e
2
ISE = ( t )dt [11]

where error = e = setpoint minus the measured rate. The ISE measure is
relatively insensitive to small errors, but large errors contribute heavily to the
value of the integral. Consequently, using ISE as a criterion of performance will
result in responses with small overshoots but long settling times, since small
errors occurring late in time contribute little to the integral.

5 - 14
 XTC/C - XTC/2 Operating Manual

The integral of the absolute value of the error (IAE) has been frequently
proposed as an alternate criterion of performance:

IAE = ∫ e ( t ) dt [12]

This criterion is more sensitive to small errors, but less sensitive to large errors,
than ISE.
Graham and Lathrop8 introduced the integral of time multiplied by the absolute
error (ITAE) as a criterion of performance:

ITAE = ∫ t e ( t ) dt [13]

ITAE is insensitive to the initial and somewhat unavoidable errors, but it will
weight heavily any errors occurring late in time. Optimum responses defined by
ITAE will consequently show short total response times and larger overshoots
than with either of the other criteria. It has been found that this criteria is
generally most useful for deposition process control.
Since the process response characteristics depend on the position of the
system (i.e. deposition rate for this discussion), the process response is best
measured at the desired operating point of the system. This measured process
information (i.e. process gain, Kp, time constant, T1, and dead time, L) is used
to generate the best fitting PID control loop parameters for the specific system.
The most satisfactory performance criterion for deposition controllers is the
ITAE. There will be overshoot, but the response time is quick, and the settling
time is short. For all of the above integral performance criteria, controller tuning
relations have been developed to minimize the associated errors. Using
manually entered or experimentally determined process response coefficients,
ideal PID controller coefficients can be readily calculated for the ITAE criteria
as shown below.
– 0.947
K c = ( 1.36 ⁄ K p ) ( L ⁄ T 1 )
IPN 074-183X

[14]

0.738
T i = ( 1.19T1 ) ( L ⁄ T 1 ) [15]

0.995
T d = ( 0.381T1 ) ( L ⁄ T 1 ) [16]

For slow systems, in order to help avoid controller windup (windup is the rapid
increase in control signal before the system has the chance to respond to the
changed signal), the time period between manipulated variable (control
voltage) changes is lengthened. This allows the system to respond to the
previous controller setting change, and aggressive controller settings can be

8.Graham, D., and Lanthrop, R.C., “The Synthesis of Optimum Transient Response: Criteria and
Standard Forms, Transactions IEEE, vol. 72 pt. II, November 1953.

5 - 15
 XTC/C - XTC/2 Operating Manual

used. A secondary advantage is that immunity to process noise is increased

since the data used for control is now comprised of multiple readings instead of
a single rate measurement, taking advantage of the mass integrating nature of
the quartz crystal.
With process systems that respond quickly (short time constant) and with little
to no measurable dead time, the PID controller often has difficulty with the
deposition process noise (beam sweep, fast thermal shorts of melt to crucible,
etc.). In these situations a control algorithm used successfully is an
integral/reset type of controller. This type of controller will always integrate the
error, driving the system towards zero error. This technique works well when
there is little or no dead time. If this technique is used on a process with
measurable lag or dead time, then the control loop will tend to be oscillatory due
to the control loop over-compensating the control signal before the system has
a chance to respond.

IPN 074-183X

5 - 16
 XTC/C - XTC/2 Operating Manual

Chapter 6
Adjustments and Problems

The only user serviceable adjustment is the LCD contrast (see below). There
are no user serviceable components inside the instrument enclosures.

WARNING

There are potentially lethal voltages inside this

instrument’s enclosure. The source of these voltages
is from the line power and also from the system and
Aux I/O connections.

6.1 LCD Contrast Adjustment (XTC/2 only)

The LCD contrast is optimized for "above the display" viewing angles and
adjusted at the factory. It may be better optimized on site for use in positions
that place the instrument in extreme viewing angles.
To adjust for best possible contrast in the installed position use a potentiometer
adjustment tool or small common screwdriver carefully inserted through the
front panel (see section 2.4 on page 2-10, Item 11) and turn clockwise or
counter clockwise to obtain the best possible display contrast for your viewing
angle.

6.2 Error Messages

The following error codes are generated and displayed by the XTC/2.
IPN 074-183X

6.2.1 Powerup Errors

ERR 0 . . . . . Film parameters lost on power up. This may be cleared by
pressing any key. All film and layer parameters will have to be
re-entered.
ERR 9 . . . . . Process data lost on power up. This is cleared by pressing any
key. Automatic process recovery will not be possible.
NOTE: Upon detection of power failure, all current layer and process data is
normally saved for process recovery use on subsequent deposition
system recovery.

6-1
 XTC/C - XTC/2 Operating Manual

6.2.2 Parameter Update Errors

ERR 1 . . . . . Parameter out of range; the value attempted to be entered was
outside of the instrument’s acceptable range. This is cleared with
the key. Refer to Table 4-2 on page 4-8 for parameter ranges.
LOC . . . . . . Parameter entry (or alteration) attempted while the PARAMETER
LOCK configuration switch is set or the parameters are locked
out through remote communications. LOC is also displayed when
attempting to update certain parameters (sensor, source, layer)
during an active process.

6.2.3 Other Errors

Err 7 . . . . . . Processor out of time error. It is not expected that this error will
be seen by a user.

6.3 Troubleshooting Guide

If the instrument fails to work, or appears to have diminished performance, the
following Symptom/Cause chart may be helpful.

WARNING

There are no user serviceable components within the

instrument case.

Potentially lethal voltages are present when the line

cord, system I/O or aux I/O are connected.

Refer all maintenance to qualified personnel.

IPN 074-183X
CAUTION

This instrument contains delicate circuitry which is

susceptible to transients. Disconnect the line cord
whenever making any interface connections. Refer all
maintenance to qualified personnel.

6-2
 XTC/C - XTC/2 Operating Manual

6.3.1 Major Instrument Components, Assemblies and

Mating Connectors
Figure 6-1 Components, Assemblies and Mating Connectors

System I/O Connector

Both IPN 051-483
& IPN 051-619
Display Board Assembly
(Included LCD Display)
Power Cord IPN 757-1112-G1 XTC/2
N. American: IPN 068-0385 IPN 759-112-G1 XTC/C
European: IPN 068-0390
Top / Bottom Cover
IPN 757-007-P2 Graphic & Switch
Overlay
IPN 757-009-P1 XTC/2
IPN 759-009-P1 XTC/C

COM Option
RS-232 Connector Connector
Both IPN 051-485 LCD Display
& IPN 051-620 IPN 757-006-P1
PROM Upgrade / Replacement Kit
XTC/2 Only
IPN 757-207-G1 XTC/2
IPN 759-207-G1 XTC/C

Main Board Assembly

IPN 757-1002-G1
XTC/2 & XTC/C
IPN 074-183X

6-3
 XTC/C - XTC/2 Operating Manual

6.3.2 Troubleshooting the Instrument

Table 6-1 Troubleshooting the Instrument

SYMPTOM CAUSE REMEDY

1. power on LED not a. blown fuse/circuit breaker a. have qualified personnel

illuminated tripped replace fuse/reset circuit
breaker

b. electrical cord unplugged b. re-connect power cord

from wall or back of
instrument

c. incorrect line voltage c. have qualified personnel

verify line voltage, verify the
instrument is configured for
the correct voltage

2.unit "locks" up a. cover or back panels not a. ensure all covers and
attached to the instrument. panels are in place and
securely fastened

b. high electrical noise b. re-route cables to reduce

environment noise pickup (1 ft. away from
high power conducting lines
makes a sizeable reduction in
the amount of noise entering
the instrument), keep all
ground wires short with large
surface area to minimize
ground impedance

c. poor grounds or poor c. verfify proper earth ground,

grounding practice use appropriate ground strap,
eliminate ground loops by
establishing the correct
system grounding, verify
proper instrument grounding

3. instrument does not retain a. faulty static RAM a. SRAM battery has a normal

IPN 074-183X
parameters on power down life expectancy of ten years,
(loss of parameters on power contact INFICON service
up) department

b. power supply problem b. contact INFICON service

department

4. some keys on front panel a. faulty keypad or faulty a. contact INFICON service
function while others do not keypad ribbon cable department

5. all keys on the front panel a. instrument is "locked" up a. turn power to OFF or to
fail to function STBY, then to on, see item 2
above

6-4
 XTC/C - XTC/2 Operating Manual

Table 6-1 Troubleshooting the Instrument (continued)

SYMPTOM CAUSE REMEDY

6. control voltage output does a. DAC board damaged from a. ensure cable connection to
not function properly applying voltage to the control the DAC board does not have
voltage output a potential across the
contacts, contact INFICON
service department

b. reversed polarity of control b. verify source output polarity

voltage relative to that of DAC and the required input
accepted by the source power polarity of the source power
supply supply, refer to the instruction
manual to reconfigure the
instrument if necessary

c. improper control cable c. check for correct cable

fabrication wiring in the appropriate
section of the manual

7. LCD display dull or blank a. brightness/contrast a. refer to manual for location

adjustment required of adjustment potentiometer,
adjust as required

b. LCD Power supply problem b. contact INFICON service

department

8. poor rate control a. control loop parameters a. refer to the instruction

improperly selected manual section on tuning
control loop parameters

b. electron beam sweep b. adjust the sweep frequency

frequency "beating" with the so it is not a multiple of the
instrument’s measurement instruments measurement
frequency frequency

9. crystal fail always on a. XIU/oscillator not a. verify proper

connected sensor/oscillator connections

b. XIU/oscillator b. if available, insert a known

malfunctioning working XIU/oscillator in place
IPN 074-183X

of the suspect one; if

XIU/oscillator is confirmed
bad, contact INFICON service
department

c. defective cable from c. use an ohm meter or DVM

feedthrough to XIU/oscillator to check electrical continuity
or from instrument to or isolation as appropriate
XIU/oscillator

d. poor electrical contact in d. use an ohm meter or DVM

the transducer, feedthroughs, to check electrical continuity
or in-vacuum cable or isolation as appropriate

e. failed crystal/no crystal e. replace crystal/insert

crystal

f. two crystals placed in the f. remove one of the crystals

same crystal holder

6-5
 XTC/C - XTC/2 Operating Manual

6.3.3 Troubleshooting Transducers/Sensors

NOTE: The most useful tool for diagnosing sensor head problems is the DVM
(Digital Volt Meter). Disconnect the short oscillator cable from the
feedthrough and measure the resistance from the center pin to ground.
If the reading is less than 1-2 megaohms, the source of the leakage
should be found and corrected. Likewise, with the vacuum system open
check for center conductor continuity, a reading of more than 1 ohm
from the feedthrough to the transducer contact indicates a problem.
Cleaning contacts or replacing the in-vacuum cable may be required.

A somewhat more thorough diagnosis may be performed with the

optional Crystal Sensor Emulator, 760-601-G1. See section 6.5 on
page 6-18 for a discussion of its use and diagnostic capabilities.
NOTE: A more detailed troubleshooting guide is shipped with the sensor. Refer
to that manual for more detailed information in some cases.

Table 6-2 Troubleshooting Transducers/Sensors

SYMPTOM CAUSE REMEDY

1. large jumps of thickness a. mode hopping due to a. replace crystal. use

reading during deposition defective crystal ModeLock measurement
system

b. stress causes film to peel b. replace crystal or try silver

from crystal surface coated crystal; consult factory

c. particulate or "spatter" from c. thermally condition the

molten source striking crystal source thoroughly before
deposition, use a shutter to
protect the crystal during
source conditioning

d. scratches or foreign d. clean and polish the crystal

IPN 074-183X
particles on the crystal holder seating surface on the crystal
seating surface (improper holder
crystal seating)

e. small pieces of material fell e. check the crystal surface

on crystal (for crystal facing and blow it off with clean air
up sputtering situation)

f. small pieces of magnetic f. check the sensor cover’s

material being attracted by the aperture and remove any
sensor magnet and contacting foreign material that may be
the crystal (sputtering sensor restricting full crystal
head) coverage

6-6
 XTC/C - XTC/2 Operating Manual

Table 6-2 Troubleshooting Transducers/Sensors (continued)

SYMPTOM CAUSE REMEDY

2. crystal ceases to oscillate a. crystal struck by particulate a. thermally condition the

during deposition before it or "spatter" from molten source thoroughly before
reaches its "normal" life source deposition, use a shutter to
protect the crystal during
source conditioning

b. material on crystal holder b.clean crystal holder

partially masking crystal cover
aperture

c. existence of electrical short c. using an ohm meter or

or open condition DVM, check for electrical
continuity in the senor cable,
connector, contact springs,
connecting wire inside sensor,
and feedthroughs

d. check for thermally induced d. see "c" above

electrical short or open
condition

NOTE: Crystal life is highly dependent on process conditions of rate, power radiated from
source, location, material, and residual gas composition.

3. crystal does not oscillate or a. intermittent or poor a. use an ohm meter or DVM
oscillates intermittently (both electrical contact (contacts to check electrical continuity,
in vacuum and in air) oxidized) clean contacts

b. leaf springs have lost b. rebend leafs to

retentivity (ceramic retainer, approximately 60°. See
center insulator) section 6.3.5 on page 6-12.

c. RF interference from c. verify earth ground, use

sputtering power supply ground strap adequate for RF
ground, change location of
instrument and oscillator
cabling away from RF power
lines, connect instrument to a
IPN 074-183X

different power line

d. cable/oscillator not d. verify proper connections,

connected, or connected to and inputs relative to
wrong sensor input programmed sensor
parameter

4. crystal oscillates in vacuum a. crystal was near the end of a. replace crystal
but stops oscillation after its life; opening to air causes
open to air film oxidation which increases
film stress

b. excessive moisture b. turn off cooling water to

accumulates on the crystal sensor prior to venting, flow
warm water through sensor
while chamber is open

6-7
 XTC/C - XTC/2 Operating Manual

Table 6-2 Troubleshooting Transducers/Sensors (continued)

SYMPTOM CAUSE REMEDY

5. thermal instability: large a. inadequate cooling a. check cooling water flow

changes in thickness reading water/cooling water rate, be certain that cooling
during source warm-up temperature too high water temperature is less than
(usually causes thickness 30 °C; refer to appropriate
reading to decrease) and after sensor manual
the termination of deposition
(usually causes thickness
reading to increase)

b. excessive heat input to the b. if heat is due to radiation

crystal from the evaporation source,
move sensor further away
from source and use
sputtering crystals for better
thermal stability; install
radiation shield

c. crystal not seated properly c. clean or polish the crystal

in holder seating surface on the crystal
holder

d. crystal heating caused by d. use a sputtering sensor

high energy electron flux head
(often found in RF sputtering)

e. poor thermal transfer from e. use a new water tube

water line to body (CrystalSix whenever the clamping
sensor) assembly has been removed
from the body; if a new water
tube is not available, use a
single layer of aluminum foil
between the cooling tube and
sensor body, if your process
allows

f. poor thermal transfer f. use Al or Au foil washer

(Bakeable) between crystal holder and

IPN 074-183X
sensor body

6. poor thickness a. variable source flux a. move sensor to a more

reproducibility distribution central location to reliably
sample evaporant, ensure
constant relative pool height
of melt, avoid tunneling into
the melt

b. sweep, dither, or position b. maintain consistent source

where the electron beam distribution by maintaining
strikes the melt has been consistent sweep
changed since the last frequencies, sweep amplitude
deposition and electron beam position
settings

6-8
 XTC/C - XTC/2 Operating Manual

Table 6-2 Troubleshooting Transducers/Sensors (continued)

SYMPTOM CAUSE REMEDY

c. material does not adhere to c. make certain the crystal’s

crystal surface is clean; avoid
touching crystal with fingers,
make use of an intermediate
adhesion layer

d. cyclic change in rate d. make certain source’s

sweep frequency is not
"beating" with the
measurement frequency
[nearly the same frequency or
a near multiple of the
measurement (4 Hz)]

7. large drift in thickness a. crystal heating due to poor a. clean or polish the crystal
(greater than 200 Å for a thermal contact seating surface on the crystal
density of 5.00 g/cc) after holder
termination of sputtering

b. external magnetic field b. rotate sensor magnet to

interfering with the sensors proper orientation with
magnetic field (sputtering external magnetic field, refer
sensor) to sputtering sensor manual
IPN 074-157

c. sensor magnet cracked or c. check sensor magnetic field

demagnetized (sputtering strength, the maximum field at
sensor) the center of the aperture
should be 700 gauss or
greater

8. CrystalSix, crystal switch a. loss of pneumatic supply, or a. ensure air supply is

problem (does not advance or pressure is insufficient for regulated at 80-90 PSI
not centered in aperture) proper operation

b. operation has been b. clean material

impaired as a result of accumulation as needed,
IPN 074-183X

material accumulation on refer to CrystalSix manual IPN

cover 074-155 for maintenance

c. improper alignment c. realign as per instructions in

CrystalSix manual IPN
074-155

d. 0.0225" diameter orifice not d. install orifice as shown in

installed on the supply side of the CrystalSix manual IPN
solenoid valve assembly 074-155

6-9
 XTC/C - XTC/2 Operating Manual

6.3.4 Troubleshooting Computer Communications

Table 6-3 Troubleshooting Computer Communications

SYMPTOM CAUSE REMEDY

1. communications cannot be a. improper cable connection a. verify for correct cable

established between the host wiring as described in the
computer and the instrument manual

b. BAUD rate in host computer b. verify BAUD rate in the

not the same as the host’s applications program,
instrument verify BAUD rate in the
instrument

c. incompatible protocols c. verify the instrument

being used protocol: RS232, SECS,
GPIB, DATALOG,
CHECKSUM, matches host

d. incorrect device address d. verify device address in

(GPIB or SECS protocol) host’s applications program,
(or in IBCONF file for National
Instrs. GPIB) and verify
instrument address

2. error code returned a. A = illegal command a. the command sent was not
valid; verify command syntax
as shown in the instrument’s
manual (placement of spaces
within the command string are
important)

b. B = illegal value b. the parameter’s value sent

is outside the range for the
given parameter, verify
parameter’s range

c. C = illegal ID c. the command sent was for a

parameter which doesn’t
exist; verify the correct

IPN 074-183X
parameter number

d. D = illegal command format d. the command sent is not

valid; verify command syntax
as shown in the instrument’s
manual (placement of spaces
within the command string are
important)

e. E = no data to retrieve e. some parameters may not

be in use, depending on the
value of other parameters

6 - 10
 XTC/C - XTC/2 Operating Manual

Table 6-3 Troubleshooting Computer Communications (continued)

SYMPTOM CAUSE REMEDY

f. F = cannot change value f. the command sent is for a

now parameter that cannot be
changed while the instrument
is executing a Process; place
the instrument in the READY
state in order to change the
value.

g. G = bad checksum g. checksum value does not

match the value sent by the
host’s application program,
may be caused by noise on
the RS232 cable or the
checksum is not calculated
properly by the applications
program.

h. O = data overrun h. I/O port unable to keep up

with data transfer rate; lower
BAUD rate, increase speed of
host’s applications program
by using a compiled version of
the program, streamlining
program execution, a faster
CPU
IPN 074-183X

6 - 11
 XTC/C - XTC/2 Operating Manual

6.3.5 Leaf Spring Concerns

Spring conditions should be observed as part of the routine maintenance
interval. Insufficient bends or deformities in the spring contacts in the sensor
body are common causes of crystal problems. Lift each leaf spring up
approximately 60°. See Figure 6-2.
Figure 6-2 Shaping the Leaf Spring

Avoid kinking
leaf spring
Leaf
Spring

60°

IPN 074-183X

6 - 12
 XTC/C - XTC/2 Operating Manual

6.4 Replacing the Crystal

The procedure for replacing the crystal is basically the same with all
transducers, except the CrystalSix.

CAUTION

Always use clean nylon lab gloves and plastic

tweezers for handling the crystal (to avoid
contamination which may lead to poor adhesion of the
film to the electrode).

Do not rotate the ceramic retainer assembly after it is

seated (as this will scratch the crystal electrode and
cause poor contact).

Do not use excessive force when handling the ceramic

retainer assembly since breakage may occur.

NOTE: Certain materials, especially dielectrics, may not adhere strongly to the
crystal surface and may cause erratic readings.

Thick deposits of some materials, such as SiO, Si, and Ni will normally
peel off the crystal when it is exposed to air, as a result of changes in
film stress caused by gas absorption. When you observe peeling,
change the crystals.

6.4.1 Standard and Compact

Follow the procedure below to replace the crystal in the Standard and Compact
sensor:
IPN 074-183X

1 Gripping the crystal holder with your fingers, pull it straight out of the sensor
body.
2 Gently pry the crystal retainer from the holder (or use crystal snatcher; see
Figure 6-6 on page 6-17).
3 Turn the retainer over and the crystal will drop out.
4 Install a new crystal, with the patterned electrode face up.
5 Push the retainer back into the holder and replace the holder in the sensor
body.

6 - 13
 XTC/C - XTC/2 Operating Manual

Figure 6-3 Standard Crystal Sensor (Exploded)

Crystal Holder

Crystal IPN 008-010-G10 (Package of 10)

Fully Coated Face (Gold)

Crystal Retainer IPN 007-023

Finger Spring Contact
IPN 750-171-P1

Standard Crystal Sensor Body

IPN 750-207-G1

In-Vacuum
Cable to
Feedthrough

Water Tubes

IPN 074-183X
6.4.2 Shuttered and Dual Sensors
There is no difference in the crystal changing procedure between shuttered and
non-shuttered Standard and Compact sensors, since the shutter pivots away
from the crystal opening when the shutter is in the relaxed state.

6 - 14
 XTC/C - XTC/2 Operating Manual

6.4.3 Bakeable Sensor

For the Bakeable sensor, the procedure is the same as the regular crystal
except that you must first unlock the cam assembly by flipping it up. Once the
crystal has been replaced, place a flat edge of the holder flush with the cam
mechanism and lock it in place with the cam (Figure 6-4).
Figure 6-4 Bakeable Crystal Sensor (Exploded)

Crystal Holder &

Retainer Spring
IPN 007-154

Crystal IPN 008-010-G10 (Package of 10)

Fully Coated Face (Gold)

Crystal Retainer IPN 007-064

Clamping Spring IPN 007-094

Contact IPN 007-099

Insulator IPN 007-103 Spreader Bar

IPN 007-267-P2
Shoulder Washer
IPN 007-268-P1
Two Required
Shoulder Washer
IPN 007-269-P1
IPN 074-183X

Cam Mechanism
IPN 007-168
Cover
IPN 007-101

6 - 15
 XTC/C - XTC/2 Operating Manual

6.4.4 Sputtering Sensor

Observe the general precautions (section 6.4 on page 6-13) for replacing
crystals and follow the instructions below to replace the crystal in a sputtering
sensor.
1 Grip the body assembly with your fingers and pull it straight out to separate
it from the water-cooled front part. (You may have to disconnect the sensor
cable in order to separate the parts.) See Figure 6-5.
2 Pull the crystal holder straight out from the front of the sensor.
3 Remove the ceramic retainer from the crystal holder by pulling it straight out
with the crystal snatcher (see section 6.4.5 on page 6-17).
4 Turn the crystal holder over so that the crystal drops out.
5 Install a new crystal into the crystal holder with the patterned electrode
facing the back and contacting the leaf springs on the ceramic retainer. (Use
only special crystals for sputtering, IPN 008-009-G10.)
6 Put the ceramic retainer back into the crystal holder and put the holder into
the front cover of the sensor.
7 Align the position of the back part so that the connector matches with the
notch on the front of the sensor. Snap the two parts together. Reconnect the
sensor cable if it has been disconnected.
Figure 6-5 Sputtering Crystal Sensor (Exploded)

Body Assembly
IPN 007-048
In-Vacuum Cable
Assembly (29")
IPN 007-044
Ceramic Retainer
IPN 007-023

IPN 074-183X
Crystal
IPN 008-009-G10
(Package of 10)
Silver
Crystal Holder
IPN 007-049

Sensor
Front Cover
IPN 007-047

6 - 16
 XTC/C - XTC/2 Operating Manual

6.4.5 Crystal Snatcher

To use the crystal snatcher supplied with the sensor follow the instructions
below:
1 Insert crystal snatcher into ceramic retainer (1) and apply a small amount of
pressure. This locks the retainer to the snatcher and allows the retainer to
be pulled straight out (2).
2 Re-insert the retainer into the holder after the crystal has been changed.
3 Release the crystal snatcher with a slight side-to-side motion.
Figure 6-6 Use of Crystal Snatcher

6.4.6 CrystalSix
IPN 074-183X

See the manual (IPN 074-155) for specific instructions for this device.

6 - 17
 XTC/C - XTC/2 Operating Manual

6.5 Crystal Sensor Emulator

IPN 760-601-G1 or 760-601-G2
NOTE: 760-601-G1 (obsolete) is not compatible for use with an IC/5 and IC/4.
760-601-G2 is fully compatible with all thin film deposition controllers.
The Crystal Sensor Emulator option is used in conjunction with the Thin Film
Deposition Controller to rapidly diagnose problems with the Deposition
Controller's measurement system. See Figure 6-7.
Figure 6-7 Crystal Sensor Emulator

Female
BNC
Connector

Sensor
Cover Female
Connector Microdot
Connector

The Crystal Sensor Emulator may be attached at various points in the

measurement system, from the oscillator to the sensor head. It provides a
known "good" monitor crystal with known "good" electrical connections. Using
the emulator and the controller in a systematic manner provides a fast means
of isolating measurement system, cable, or sensor problems. See Figure 6-8.
Figure 6-8 Crystal Sensor Emulator’s Attachment Points

Sensor Head
B

IPN 074-183X
Thin Film
A C
Controller
Crystal Interface
Unit (Oscillator)

CAUTION

This product is designed as a diagnostic tool, and is

not intended for use in vacuum. Do not leave the
Crystal Sensor Emulator installed in the vacuum
system during processing.

6 - 18
 XTC/C - XTC/2 Operating Manual

6.5.1 Diagnostic Procedures

The following diagnostic procedures employ the Crystal Sensor Emulator to
analyze a constant Crystal Fail message. The symptom is a Crystal Fail
message that is displayed by the Deposition Controller even after the monitor
crystal has been replaced with a new “good” monitor crystal.
NOTE: The "Unable To Auto Z" message will be displayed if the Crystal Sensor
Emulator is attached to a deposition controller and you are attempting
to use the Auto Z feature. This is to be expected and is normal.

6.5.1.1 Measurement System Diagnostic Procedure

1 Refer to Figure 6-8 on page 6-18. Remove the six-inch BNC cable from the
Feed-Through at point A.
2 Connect the Crystal Sensor Emulator to the 6 inch BNC cable at Point A.
Š If the XTAL Fail message disappears after approximately five seconds,
the measurement system is working properly. Re-install the six-inch
BNC cable to the Feed-Through. Go to section 6.5.1.2.
Š If the XTAL Fail message remains, continue at step 3.
3 Disconnect the six-inch BNC cable from the Oscillator and from the
Emulator.
4 Visually inspect the six-inch BNC cable to verify that the center pins are
seated properly.
5 Use an Ohm meter to verify the electrical connections on the six-inch BNC
cable.
Š There must be continuity (<0.2 ohms) between the center pins.
Š There must be isolation (>10 megohms) between the center pins and
the connector shield.
IPN 074-183X

Š There must be continuity between the connector shields.

Replace the six-inch BNC cable if it is found to be defective and repeat Step
2 of this procedure.
6 If the six-inch BNC cable is not defective, re-connect the six-inch cable to
the oscillator and to the Crystal Sensor Emulator. If the XTAL Fail message
remains, contact INFICON's Service Department.

6 - 19
 XTC/C - XTC/2 Operating Manual

6.5.1.2 Feed-Through Or In-Vacuum Cable

Diagnostic Procedure
1 Refer to Figure 6-8 on page 6-18. Remove the In-Vacuum cable from the
Sensor Head at point B.
2 Connect the Crystal Sensor Emulator to the In-Vacuum cable.
Š If the XTAL Fail message disappears after approximately five seconds,
the Feed-Through and In-Vacuum Cable are working properly. Re-install
the In-Vacuum cable to the Sensor Head. Go to section section 6.5.1.3
on page 6-21.
Š If the XTAL Fail message remains, continue at step 3.
3 Disconnect the In-Vacuum cable from the Feed-Through and the Emulator.
Disconnect the six-inch BNC cable from the Feed-Through.
4 Using an Ohm Meter, verify electrical continuity from the BNC center pin on
the Feed-Through to the Microdot center pin on the Feed-Through. A typical
value would be less than 0.2 ohms.
5 Verify electrical isolation of the center pin on the Feed-Through from the
electrical ground (Feed-Through body). A typical value would be in excess
of 10 megohms.
If the Feed-Through is found to be defective, replace the Feed-Through,
re-attach the BNC and In-Vacuum cables, and repeat this procedure starting at
Step 2, otherwise continue at step 6.
6 Verify electrical continuity from center pin to center pin on the In-Vacuum
cable.
7 Verify that the center pin of the In-Vacuum cable is electrically isolated from
the In-Vacuum cable shield.
If the In-Vacuum cable is found to be defective, replace the In-Vacuum cable.

IPN 074-183X
Re-attach the BNC and In-Vacuum cables, and repeat this procedure starting
at Step 2, otherwise continue at step 8.
8 Connect the In-Vacuum Cable to the Feed-Through.
9 Verify electrical continuity from the center pin on the BNC connector of the
Feed-Through to the center pin on the un-terminated end of the In-Vacuum
cable.
10 Verify electrical isolation from the center pin to electrical ground
(Feed-Through body).
If the Feed-Through/In-Vacuum cable system is found to be defective, look for
defective electrical contacts at the Feed-Through to In-Vacuum cable
connection. Repair or replace the Feed-Through as necessary. Re-attach the
BNC and In-Vacuum cables and repeat this procedure starting at step 2.
Otherwise, continue at step 11.

6 - 20
 XTC/C - XTC/2 Operating Manual

11 Connect the six-inch BNC cable to the Feed-Through and disconnect it from
the Crystal Interface Unit (or Oscillator)
12 Verify electrical continuity from the center pin of the Microdot connector on
the Feed-Through to the un-terminated end of the six-inch BNC cable.
13 Verify electrical isolation from the center pin to electrical ground
(Feed-Through body).
If the Feed-Through/six-inch BNC cable system is found to be defective, look
for defective contacts at the Feed-Through to BNC cable connection. Repair or
replace the Feed-Through as necessary, re-attach the BNC cable to the XIU
and In-Vacuum cable to the Crystal head and repeat this procedure starting at
step 2.

6.5.1.3 Sensor Head Or Monitor Crystal

Diagnostic Procedure
1 Remove the Crystal Cover from the Sensor Head.
2 Refer to Figure 6-7 on page 6-18. Connect the Crystal Sensor Emulator to
the Sensor Head at Point C.
Š If the XTAL Fail message disappears after approximately 5 sec. then the
Sensor Head is operating properly. Re-insert the Crystal Cover into the
Sensor Head and go to section 6.5.1.3 on page 6-21.
Š If the XTAL Fail message remains, continue at step 3.
3 Disconnect the In-Vacuum cable from the Sensor Head and the
Feed-Through. Remove the Crystal Sensor Emulator from the Sensor
Head.
4 Using an Ohm meter, verify the electrical connections on the Sensor Head.
Š Verify there is electrical continuity from the center pin contact on the
IPN 074-183X

Microdot connector on the Sensor Head to the finger spring contact in

the Sensor Head.
Š There must be electrical isolation between the center pin of the Microdot
connector and the Sensor Head body.
If the Sensor Head is found to be defective, contact INFICON’s Service
Department to have the Sensor Head repaired.

6 - 21
 XTC/C - XTC/2 Operating Manual

5 Connect the In-Vacuum Cable to the Sensor Head.

Š Verify there is continuity (<0.2 ohm) from the finger spring contact in the
Sensor Head to the center pin on the un-terminated end of the
In-Vacuum cable.
Š Verify there is isolation (>10 megohm) between the finger spring contact
and the In-Vacuum cable shield.
If the Sensor Head or the In-Vacuum cable system is found to be defective, look
for defective contacts at the In-Vacuum cable to Sensor Head connection,
repair or replace the Sensor Head as necessary. Re-attach the In-Vacuum
cable to the Feed-Through and repeat this procedure starting at step 2.
6 Ensure that the leaf springs in the Sensor Head and those in the ceramic
retainer are bent to an angle of approximately 60 degrees from flat.

6.5.1.4 System Diagnostics Pass But

Crystal Fail Message Remains
If the system is operating properly, yet the Crystal Fail message is still
displayed, perform the following tasks.
1 On the ceramic retainer verify that the center rivet is secure. Repair or
replace the ceramic retainer as necessary.
2 Inspect the inside of the Crystal Cover for build-up of material. Clean or
replace the Crystal Cover as necessary.
After verifying the Sensor Head contacts, the Sensor Head/In-Vacuum cable
connection, and the ceramic retainer contacts, re-assemble the system. If the
Crystal Fail message remains, replace the monitor crystal with a good monitor
crystal. Verify that the monitor crystal works properly by inserting it into a known
good measurement system. If you continue to experience problems, contact an
INFICON Applications Engineer for Technical Support.

IPN 074-183X
6.5.2 % XTAL Life
The Crystal Sensor Emulator contains a quartz crystal having a fundamental
frequency at 5.5 MHz. With the Crystal Sensor Emulator connected, the %
XTAL Life display should read approximately 45% for XTC/2 and XTC/B
deposition controllers which allow a 1.0 MHz frequency shift.

6 - 22
 XTC/C - XTC/2 Operating Manual

6.5.3 Sensor Cover Connection

The Crystal Sensor Emulator can be used to verify the measurement system for
INFICON's Thin Film Deposition Controllers and Monitors, including the
IC6000, XTC, IC/4 Plus, IC/4 MPT, XTC/2, XTC/C, XTM/2, and the IC/5.
NOTE: 760-601-G1 (obsolete) is not compatible for use with an IC/5 and IC/4.
760-601-G2 is fully compatible with all thin film deposition controllers.
However, the Crystal Sensor Emulator's Sensor Cover Connector is compatible
with some sensor heads, and is incompatible with others. This is discussed in
the following sections.

6.5.3.1 Compatible Sensor Heads

The Sensor Cover Connection will fit the sensor heads shown in Table 6-4.
Table 6-4 Compatible Sensor Heads

Sensor Head Part Number

Standard Sensor Head 750-211-G1
Standard Sensor Head with Shutter 750-211-G2
Compact Sensor Head 750-213-G1
Compact Sensor Head with Shutter 750-213-G2
Dual Sensor Head 750-212-G2

6.5.3.2 Incompatible Sensor Heads

The Sensor Heads for which the Crystal Sensor Emulator's Sensor Cover
Connector will not fit are shown in Table 6-5.
Table 6-5 Incompatible Sensor Heads

Sensor Head Part Number

UHV Bakeable Sensor Head (12 inch) 007-219
IPN 074-183X

UHV Bakeable Sensor Head (20 inch) 007-220

UHV Bakeable Sensor Head (30 inch) 007-221
UHV Bakeable Sensor Head w/ Shutter (12 inch) 750-012-G1
UHV Bakeable Sensor Head w/ Shutter (20 inch) 750-012-G2
UHV Bakeable Sensor Head w/ Shutter (30 inch) 750-012-G3
Sputtering Sensor Head 007-031
CrystalSix Sensor Head with position select 750-446-G1
CrystalSix Sensor Head 750-260-G1

NOTE: The Crystal Sensor Emulator’s Sensor Cover will not fit the crystal
holder opening of the older style INFICON transducers that have the
"soldered" finger springs.

6 - 23
 XTC/C - XTC/2 Operating Manual

6.5.4 Specifications
Dimensions
1.58 in. diameter x 1.79 in.
(4.01 cm diameter x 4.55 cm)
Temperature Range
0 to 50 oC
Frequency
760-601-G1: 5.5 MHz ± 30ppm at room temperature
760-601-G2: 5.5 MHz ± 1ppm at room temperature
Materials
304 Stainless Steel, Nylon, Teflon, brass. Some internal components contain
zinc, tin, and lead.

IPN 074-183X

6 - 24
 XTC/C - XTC/2 Operating Manual

Appendix A
Table of Densities and Z-ratios

The following table represents the content of the instrument's material library.
The list is alphabetical by chemical formula.

CAUTION

Some of these materials are toxic. Please consult the

material safety data sheet and safety instructions
before use.

Remote Communications Responses and Commands use the code value to

represent a specific material. An * is used to indicate that a Z-ratio has not been
established for a certain material. A value of 1.000 is defaulted in these
situations.
Table A-1 Material Table
Formula Density Z-ratio Material Name
Ag 10.5000 0.529 Silver
AgBr 6.470 1.180 Silver Bromide
AgCl 5.560 1.320 Silver Chloride
Al 2.700 1.080 Aluminum
Al2O3 3.970 0.336 Aluminum Oxide
Al4C3 2.360 *1.000 Aluminum Carbide
AIF3 3.070 *1.000 Aluminum Fluoride
AIN 3.260 *1.000 Aluminum Nitride
IPN 074-183X

AlSb 4.360 0.743 Aluminum Antimonide

As 5.730 0.966 Arsenic
As2Se3 4.750 *1.000 Arsenic Selenide
Au 19.300 0.381 Gold
B 2.370 0.389 Boron
B 2O 3 1.820 *1.000 Boron Oxide
B 4C 2.370 *1.000 Boron Carbide
Ba 3.500 2.100 Barium
BaF2 4.886 0.793 Barium Fluoride
BaN2O6 3.244 1.261 Barium Nitrate
BaO 5.720 *1.000 Barium Oxide

A-1
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
BaTiO3 5.999 0.464 Barium Titanate (Tetr)
BaTiO3 6.035 0.412 Barium Titanate (Cubic)
Be 1.850 0.543 Beryllium
BeF2 1.990 *1.000 Beryllium Fluoride
BeO 3.010 *1.000 Beryllium Oxide
Bi 9.800 0.790 Bismuth
Bi2O3 8.900 *1.000 Bismuth Oxide
Bi2S3 7.390 *1.000 Bismuth Trisulphide
Bi2Se3 6.820 *1.000 Bismuth Selenide
Bi2Te3 7.700 *1.000 Bismuth Telluride
BiF3 5.320 *1.000 Bismuth Fluoride
BN 1.860 *1.000 Boron Nitride
C 2.250 3.260 Carbon (Graphite)
C 3.520 0.220 Carbon (Diamond)
C 8H 8 1.100 *1.000 Parlyene (Union Carbide)
Ca 1.550 2.620 Calcium
CaF2 3.180 0.775 Calcium Fluoride
CaO 3.350 *1.000 Calcium Oxide
CaO-SiO2 2.900 *1.000 Calcium Silicate (3)
CaSO4 2.962 0.955 Calcium Sulfate
CaTiO3 4.100 *1.000 Calcium Titanate
CaWO4 6.060 *1.000 Calcium Tungstate

IPN 074-183X
Cd 8.640 0.682 Cadmium
CdF2 6.640 *1.000 Cadmium Fluoride
CdO 8.150 *1.000 Cadmium Oxide
CdS 4.830 1.020 Cadmium Sulfide
CdSe 5.810 *1.000 Cadmium Selenide,
CdTe 6.200 0.980 Cadmium Telluride
Ce 6.780 *1.000 Cerium
CeF3 6.160 *1.000 Cerium (111) Fluoride
CeO2 7.130 *1.000 Cerium (IV) Dioxide
Co 8.900 0.343 Cobalt
CoO 6.440 0.412 Cobalt Oxide

A-2
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
Cr 7.200 0.305 Chromium
Cr2O3 5.210 *1.000 Chromium (111) Oxide
Cr3C2 6.680 *1.000 Chromium Carbide
CrB 6.170 *1.000 Chromium Boride
Cs 1.870 *1.000 Cesium
Cs2SO4 4.243 1.212 Cesium Sulfate
CsBr 4.456 1.410 Cesium Bromide
CsCI 3.988 1.399 Cesium Chloride
CsI 4.516 1.542 Cesium Iodide
Cu 8.930 0.437 Copper
Cu2O 6.000 *1.000 Copper Oxide
Cu2S 5.600 0.690 Copper (I) Sulfide (Alpha)
Cu2S 5.800 0.670 Copper (I) Sulfide (Beta)
CuS 4.600 0.820 Copper (11) Sulfide
Dy 8.550 0.600 Dysprosium
Dy2O3 7.810 *1.000 Dysprosium Oxide
Er 9.050 0.740 Erbium
Er2O3 8.640 *1.000 Erbium Oxide
Eu 5.260 *1.000 Europium
EuF2 6.500 *1.000 Europium Fluoride
Fe 7.860 0.349 Iron
Fe2O3 5.240 *1.000 Iron Oxide
IPN 074-183X

FeO 5.700 *1.000 Iron Oxide

FeS 4.840 *1.000 Iron Sulphide
Ga. 5.930 0.593 Gallium
Ga2O3 5.880 *1.000 Gallium Oxide (B)
GaAs 5.310 1.590 Gallium Arsenide
GaN 6.100 *1.000 Gallium Nitride
GaP 4.100 *1.000 Gallium Phosphide
GaSb 5.600 *1.000 Gallium Antimonide
Gd 7.890 0.670 Gadolinium
Gd2O3 7.410 *1.000 Gadolinium Oxide
Ge 5.350 0.516 Germanium

A-3
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
Ge3N2 5.200 *1.000 Germanium Nitride
GeO2 6.240 *1.000 Germanium Oxide
GeTe 6.200 *1.000 Germanium Telluride
Hf 13.090 0.360 Hafnium
HfB2 10.500 *1.000 Hafnium Boride,
HfC 12.200 *1.000 Hafnium Carbide
HfN 13.800 *1.000 Hafnium Nitride
HfO2 9.680 *1.000 Hafnium Oxide
HfSi2 7.200 *1.000 Hafnium Silicide,
Hg 13.460 0.740 Mercury
Ho 8.800 0.580 Holminum
Ho2O3 8.410 *1.000 Holminum Oxide
In 7.300 0.841 Indium
In2O3 7.180 *1.000 Indiurn Sesquioxide,
In2Se3 5.700 *1.000 Indium Selenide
In2Te3 5.800 *1.000 Indium Telluride
InAs 5.700 *1.000 Indium Arsenide
InP 4.800 *1.000 Indium Phosphide
InSb 5.760 0.769 Indium Antimonide
Ir 22.400 0.129 Iridium
K 0.860 10.189 Potassium
KBr 2.750 1.893 Potassium Bromide

IPN 074-183X
KCI 1.980 2.050 Potassium Chloride
KF 2.480 *1.000 Potassium Fluoride
KI 3.128 2.077 Potassium Iodide
La 6.170 0.920 Lanthanum
La2O3 6.510 *1.000 Lanthanum Oxide
LaB6 2.610 *1.000 Lanthanurn Boride
LaF3 5.940 *1.000 Lanthanum Fluoride
Li 0.530 5.900 Lithium
LiBr 3.470 1.230 Lithium Bromide
LiF 2.638 0.778 Lithium Fluoride
LiNbO3 4.700 0.463 Lithium Niobate

A-4
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
Lu 9.840 *1.000 Lutetium
Mg 1.740 1.610 Magnesium
MgAl2O4 3.600 *1.000 Magnesium Aluminate
MgAl2O6 8.000 *1.000 Spinel
MgF2 3.180 0.637 Magnesium Fluoride
MgO 3.580 0.411 Magnesium Oxide
MgO3Al2O3 8.000 *1.000 Spinel
Mn 7.200 0.377 Manganese
MnO 5.390 0.467 Manganese Oxide
MnS 3.990 0.940 Manganese (ll) Sulfide
Mo 10.200 0.257 Molybdenum
Mo2C 9.180 *1.000 Molybdenum Carbide
MoB2 7.120 *1.000 Molybdenum Boride
MoO3 4.700 *1.000 Molybdenum Trioxdide
MoS2 4.800 *1.000 Molybdenum Disulfide
Na 0.970 4.800 Sodium
Na3AIF6 2.900 *1.000 Cryolite
Na5Al3F14 2.900 *1.000 Chiolite
NaBr 3.200 *1.000 Sodium Bromide
NaCl 2.170 1.570 Sodium Chloride
NaCIO3 2.164 1.565 Sodium Chlorate
NaF 2.558 0.949 Sodium Fluoride
IPN 074-183X

NaNO3 2.270 1.194 Sodium Nitrate

Nb 8.578 0.492 Niobium (Columbium)
Nb2O3 7.500 *1.000 Niobium Trioxide
Nb2O5 4.470 *1.000 Niobium (V) Oxide
NbB2 6.970 *1.000 Niobium Boride
NbC 7.820 *1.000 Niobium Carbide
NbN 8.400 *1.000 Niobiunn Nitride
Nd 7.000 *1.000 Neodynium
Nd2O3 7.240 *1.000 Neodynium Oxide
NdF3 6.506 *1.000 Neodynium Fluoride
Ni 8.910 0.331 Nickel

A-5
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
NiCr 8.500 *1.000 Nichrome
NiCrFe 8.500 *1.000 Inconel
NiFe 8.700 *1.000 Permalloy
NiFeMo 8.900 *1.000 Supermalloy
NiO 7.450 *1.000 Nickel Oxide
P 3N 5 2.510 *1.000 Phosphorus Nitride
Pb 11.300 1.130 Lead
PbCl2 5.850 *1.000 Lead Chloride
PbF2 8.240 0.661 Lead Fluoride
PbO 9.530 *1.000 Lead Oxide
PbS 7.500 0.566 Lead Sulfide
PbSe 8.100 *1.000 Lead Selenide,
PbSnO3 8.100 *1.000 Lead Stannate
PbTe 8.160 0.651 Lead Telluride
PbTiO3 7.50 1.16 Lead Titanate
Pd 12.038 0.357 Palladium
PdO 8.310 *1.000 Palladium Oxide
Po 9.400 *1.000 Polonium
Pr 6.780 *1.000 Praseodymium
Pr2O3 6.880 *1.000 Praseodymium Oxide
Pt 21.400 0.245 Platinum
PtO2 10.200 *1.000 Platinum Oxide

IPN 074-183X
Ra 5.000 *1.000 Radium
Rb 1.530 2.540 Rubidium
RbI 3.550 *1.000 Rubidiurn Iodide
Re 21.040 0.150 Rhenium
Rh 12.410 0.210 Rhodium
Ru 12.362 0.182 Ruthenium
S8 2.070 2.290 Sulphur
Sb 6.620 0.768 Antimony
Sb2O3 5.200 *1.000 Antimony Trioxide
Sb2S3 4.640 *1.000 Antimony Trisulfide
Sc 3.000 0.910 Scandiurn

A-6
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
Sc2O3 3.860 *1.000 Scandiurn Oxide
Se 4.810 0.864 Selenium
Si 2.320 0.712 Silicon
Si3N4 3.440 *1.000 Silicon Nitride
SiC 3.220 *1.000 Silicon Carbide
SiO 2.130 0.870 Silicon (II) Oxide
SiO2 2.648 1.000 Silicon Dioxide
Sm 7.540 0.890 Samarium
Sm2O3 7.430 *1.000 Samariurn Oxide
Sn 7.300 0.724 Tin
SnO2 6.950 *1.000 Tin Oxide
SnS 5.080 *1.000 Tin Sulfide
SnSe 6.180 *1.000 Tin Selenide
SnTe 6.440 *1.000 Tin Telluride
Sr 2.600 *1.000 Strontium
SrF2 4.277 0.727 Strontium Fluroide
SrTiO3 5.123 0.31 Strontium Titanate
SrO 4.990 0.517 Strontium Oxide
Ta 16.600 0.262 Tantalum
Ta2O5 8.200 0.300 Tantalum (V) Oxide
TaB2 11.150 *1.000 Tantalum Boride
TaC 13.900 *1.000 Tantalum Carbide
IPN 074-183X

TaN 16.300 *1.000 Tantalum Nitride

Tb 8.270 0.660 Terbium
Tc 11.500 *1.000 Technetium
Te 6.250 0.900 Tellurium
TeO2 5.990 0.862 Tellurium Oxide
Th 11.694 0.484 Thorium
ThF4 6.320 *1.000 Thorium.(IV) Fluoride
ThO2 9.860 0.284 Thorium Dioxide
ThOF2 9.100 *1.000 Thorium Oxyfluoricle
Ti 4.500 0.628 Titanium
Ti2O3 4.600 *1.000 Titanium Sesquioxide

A-7
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
TiB2 4.500 *1.000 Titanium Boride
TiC 4.930 *1.000 Titanium Carbide
TiN 5.430 *1.000 Titanium Nitride
TiO 4.900 *1.000 Titanium Oxide
TiO2 4.260 0.400 Titanium (IV) Oxide
TI 11.850 1.550 Thallium
TIBr 7.560 *1.000 Thallium Bromide
TICI 7.000 *1.000 Thallium Chloride
TII 7.090 *1.000 Thalliurn Iodide (B)
U 19.050 0.238 Uranium
U 3O 8 8.300 *1.000 Tri Uranium Octoxide
U 4O 9 10.969 0.348 Uranium Oxide
UO2 10.970 0.286 Uranium Dioxide
V 5.960 0.530 Vanadium
V 2O 5 3.360 *1.000 Vanadium Pentoxide
VB2 5.100 *1.000 Vanadium Boride
VC 5.770 *1.000 Vanadium Carbide
VN 6.130 *1.000 Vanadium Nitride
VO2 4.340 *1.000 Vanadium Dioxide
W 19.300 0.163 Tungsten
WB2 10.770 *1.000 Tungsten Boride
WC 15.600 0.151 Tungsten Carbide

IPN 074-183X
WO3 7.160 *1.000 Tungsten Trioxide
WS2 7.500 *1.000 Tungsten Disulphicle
WSi2 9.400 *1.000 Tungsten Silicide
Y 4.340 0.835 Yttrium
Y 2O 3 5.010 *1.000 Yttrium Oxide
Yb 6.980 1.130 Ytterbium
Yb2O3 9.170 *1.000 Ytterbium Oxide
Zn 7.040 0.514 Zinc
Zn3Sb2 6.300 *1.000 Zinc Antimonide
ZnF2 4.950 *1.000 Zinc Fluoride
ZnO 5.610 0.556 Zinc Oxide

A-8
 XTC/C - XTC/2 Operating Manual

Table A-1 Material Table (continued)

Formula Density Z-ratio Material Name
ZnS 4.090 0.775 Zinc Sulfide
ZnSe 5.260 0.722 Zinc Selenide
ZnTe 6.340 0.770 Zinc Telluride
Zr 6.490 0.600 Zirconium
ZrB2 6.080 *1.000 Zirconium Boride
ZrC 6.730 0.264 Zirconium Carbide
ZrN 7.090 *1.000 Zirconium Nitride
ZrO2 5.600 *1.000 Zirconium Oxide
10.000 *1.000 USER
IPN 074-183X

A-9
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A - 10
 XTC/C - XTC/2 Operating Manual

Index

A D
active oscillator 5-9, 5-12 DATALOG 3-25
alarms 4-9 Defining A Process 2-36
anharmonic 5-5, 5-10 density 5-1
application support 1-11 calibration 5-1
applications 2-29 value 5-1
AT deposit state 2-15
crystal 5-12 deposition monitor 2-29
resonator 5-6 display 1-7
Dual sensor 3-6
B
backup crystal 2-13 E
bakeable sensor 3-6 earth ground 1-3, 3-2
Biological 2-29 electrode-to-quartz bond 5-6
biological measurement 2-32 electroplating 2-29
error messages 6-1
C etching 2-29, 2-32
calibration 2-14, 5-1, 5-3 evaporation source. 5-12
chart recorder 3-19
co-deposition 3-39 F
command structure 3-22 fast source 4-11
compact sensor 3-6 field service 1-11
computer communications 3-20 fit, weighted least-square-exponential 5-13
configuration switches 2-19 frequency, starting 4-27
contamination fundamental 5-10, 5-12
declaration of contamination 1-12
control G
system 5-14 grounding stud 2-22
control loop 4-11, 5-12 grounding, electrical 3-2
control parameter 2-14
controller
H
IPN 074-183X

gain 5-14
model 5-12, 5-14 Hand Held Controller 4-19
crucible select 3-17
crystal I
frequency spectrum 5-12 IAE 5-15
resonance point 5-11 Idle State 2-34
crystal fail 2-15, 4-9, 4-22 integral time 5-14
crystal fail inhibit 4-23 ISE 5-14
crystal indication 2-13 ITAE 5-15
crystal life 2-10, 4-27
crystal replacement 6-13 L
crystal snatcher 6-17 Laplace transform 5-13
CrystalSix 3-10 LCD Contrast 6-1
CrystalSix sensor 3-6 liquid measurement 2-33
CrystalSwitch 2-10, 4-24
CrystalSwitch output 4-25

Index - 1
 XTC/C - XTC/2 Operating Manual

M rate set point 5-14

Manual Power 2-34 RateWatcher 2-12, 4-21
mass sensitivity 5-4 rear panel 2-18
measured deposition rate 5-14 recorder 2-28
Measurement And Control Loop 4-4 recorder output 1-7
measurement theory 5-4 reference oscillator 5-7
mode hopping 5-10 relays 3-15
ModeLock 5-11 Remote command 3-32
monitor crystals 5-5 repair support 1-11
Monitoring - Systems with a Source Shutter resonance 5-9
2-30 return material authorization 1-12
Monitoring - Systems Without a Source
Shutter 2-29 S
multi-layer controller 2-36 series resonance 5-11
multiple layer deposition 5-4 slow source 4-12
soak power level 4-20
N soft crystal failures 4-14
noise pickup 3-3 source 2-14
source 1,2 2-27
source control 1-6, 2-35
O
source outputs 3-20
one layer controller 2-33
source shutter 3-15
operation 1-8
specifications 1-6
oscillator 1-9, 5-11
sputtering sensor 3-6
oscillator circuit 5-10
standard sensor 3-6
state descriptions 4-6
P Status command 3-28
parameter limits 4-6 stops 4-9
parameter update errors 6-2
period measurement technique 5-7
T
PID 5-12, 5-14, 5-15
test mode 2-12, 3-11
post deposit 2-15
thickness shear mode 5-5
power 5-14
thickness twist mode 5-5
pre deposit 2-15
time power state 2-35
process
time-power 4-22
error 5-14
tooling 5-1, 5-2

IPN 074-183X
process recipe storage 1-7
tuning 4-11
process, defining 2-36
programming 4-1
pulse accumulator 5-7 U
unpacking 2-1
Update Command 3-28
Q
Update command 3-28
Q-Factor 4-15
quality rate control 5-8
quartz crystal 5-4, 5-5, 5-16 V
quasiharmonic 5-5 voltage selection 2-4
quick use guide 2-1
W
R windup 5-15
rate deviation 2-13
rate ramp 2-15, 4-19 X
rate sampling 2-31 XIU (Crystal Interface Unit) 1-9

Index - 2
 XTC/C - XTC/2 Operating Manual

Z
zero displayed thickness 2-10
Z-Match equation 5-8
Z-Match technique 5-8
Z-Ratio 5-1, A-1
IPN 074-183X

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IPN 074-183X

Index - 4