Xuewei 2014
Xuewei 2014
Vo
iS2 = iS3 = Iin − · (t − t2 ) (3)
2n · Llk
Iin Vo
iD6 = iD7 = − 2 · (t − t2 ). (4)
n n · Llk
Since the antiparallel body diodes D6 and D7 are conducting,
switches S6 and S7 can be gated for ZVS turn-on. At the end of
this interval t = t3 , D6 and D7 commutate naturally. Primary
current reaches zero and ready to change polarity. Current
through all primary devices reaches Iin /2. Final values are
ilk = 0, iS1 = iS2 = iS3 = iS4 = Iin /2, and iD6 = iD7 = 0.
Interval 4 (see Fig. 4(d); t3 < t < t4 ): In this interval, sec-
ondary H-bridge devices S6 and S7 are turned on with ZVS.
Currents through all the switching devices continue increasing
or decreasing with the same slope as interval 3. At the end of Fig. 4. Equivalent circuits during different intervals of operation of the
this interval, primary devices S2 and S3 commutate naturally proposed converter for the waveforms shown in Fig. 3.
2310 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 61, NO. 5, MAY 2014
with ZCC and their respective currents iS2 and iS3 reach zero of the secondary switches D5 and D8 is Iin /n. The final values
obtaining ZCS. The full current, i.e., input current Iin , is taken are iS1 = iS4 = ilk = Iin , iS2 = iS3 = 0, and iD5 = iD8 =
over by other devices S1 and S4 , and the transformer current Iin /n.
changes polarity. Final values are ilk = Iin , iS1 = iS4 = Iin , Voltage across switches S2 and S3 VS2 = VS3 = Vo /n.
iS2 = iS3 = 0, and iS6 = iS7 = Iin /n. In this half HF cycle, current has transferred from one
Interval 5 (see Fig. 4(e); t4 < t < t5 ): In this interval, the diagonal switch pair to the other diagonal switch pair, and the
primary current or leakage inductance current ilk further in- transformer current has reversed its polarity.
creases with the same slope. Antiparallel body diodes D2 and
D3 start conducting, causing extended zero voltage to appear III. D ESIGN OF C ONVERTER
across the outgoing or commutated switches S2 and S3 to
ensure ZCS turnoff. Now, secondary devices S6 and S7 are In this section, converter design procedure is illustrated
turned off. At the end of this interval, currents through the by a design example for the following specifications: In-
transformer and switches S1 and S4 reach their peak value. This put voltage Vin = 12 V, output voltage Vo = 150–300 V,
interval should be very short to limit the peak current through nominal output voltage = 288 V, output power Po = 250 W,
the transformer and switches, and thus their kilovoltampere and switching frequency fs = 100 kHz. The design equations
ratings. are presented to determine the components’ ratings. It helps the
The currents through operating components are given by selection of the components, as well as the prediction of the
converter performance theoretically.
Vo
ilk = Iin + · (t − t4 ) (5) 1) Average input current is Iin = Po /(ηVin ). Assuming an
n · Llk
ideal efficiency value η of 95%, Iin = 21.9 A.
Vo 2) Maximum voltage across the primary switches is
iS1 = iS4 = Iin + · (t − t4 ) (6)
2n · Llk
Vo
Vo VP,SW = . (13)
iD2 = iD3 = · (t − t4 ) (7) n
2n · Llk
Iin Vo 3) Voltage conversion ratio or input and output voltages are
iS6 = iS7 = + 2 · (t − t4 ). (8) related as
n n · Llk
n · Vin
Interval 6 (see Fig. 4(f); t5 < t < t6 ): During this interval, Vo = (14)
secondary switches S6 and S7 are turned off. Antiparallel body 2 · (1 − d)
diodes of switches S5 and S8 take over the current immediately. where d is the duty cycle of primary switches.
Therefore, the voltage across the transformer primary reverses 4) The leakage inductance of the transformer or series in-
polarity and the current through it starts decreasing. The cur- ductance Llk is calculated by
rents through switches S1 and S4 and body diodes D2 and D3
also start decreasing. Vo · (d − 0.5)
Llk = . (15)
The currents through operating components are given by 2 · n · Iin · fs
Vo
ilk = Ilk,peak − · (t − t5 ) (9) 5) RMS current through the primary switches is given by
n · Llk
2−d
Vo IP,rms = Iin . (16)
iS1 = iS4 = Isw,peak − · (t − t5 ) (10) 3
2n · Llk
Selection of transformer turns ratio is associated with
Vo
iD2 = iD3 = ID2,peak − · (t − t5 ) (11) device RMS current and conduction losses, particularly
2n · Llk primary-side semiconductor devices because they carry
Ilk,peak Vo higher currents. Higher value of turns ratio reduces the
iD5 = iD8 = − 2 · (t − t5 ). (12) maximum voltage across the primary switches that permit
n n · Llk
the use of low-voltage devices with low ON-state resis-
At the end of this interval, currents through D2 and D3 reduce tance [from (13)]. However, selection of higher value of
to zero and are commutated naturally. Currents through S1 and turns ratio yields higher switch RMS current [from (14)
S4 and the transformer reach Iin . and (16)]. Maximum duty cycle is obtained accordingly
Final values are ilk = iS1 = iS4 = Iin , iD2 = iD3 = 0, and from (14). Therefore, an optimal value of n should be
iD5 = iD8 = Iin /n. selected to limit the conduction losses to obtain the
Interval 7 (see Fig. 4(g); t6 < t < t7 ): In this interval, snub- best converter efficiency and components’ utilization. An
ber capacitors C2 and C3 charge to Vo /n in a short period of optimum value of n = 10 at d = 0.8 is selected to achieve
time. Switches S2 and S3 are in forward blocking mode now. low overall conduction losses for the given specifications.
Interval 8 (see Fig. 4(h); t7 < t < t8 ): In this interval, cur- Output voltage can be regulated from 150 to 300 V by
rents through S1 and S4 and the transformer are constant at modulating the duty ratio between 0.6 and 0.8. Leakage
input current Iin . The current through antiparallel body diodes inductance from (15) is calculated as Llk = 2.05 μH.
XUEWEI AND RATHORE: SNUBBERLESS SOFT-SWITCHING FULL-BRIDGE ISOLATED DC/DC CONVERTER FOR FCVS 2311
Here, Iav ∼
= 0.42 A. Voltage rating of secondary-side
devices = Vo = 300 V.
9) Average current through the antiparallel body diodes of
secondary devices is given by
Iin · (7 − 6d)
īD = . (20)
8n
10) RMS current through the secondary-side switches is
given by
Fig. 5. Current waveforms through input inductor I(L) and leakage in-
Iin 2d − 1 ductance I(Llk ), voltage waveform across leakage inductance V (Llk ), and
Is,rms = . (21) voltage waveform VAB .
2n 3
11) VA rating of the HF transformer is given by IV. S IMULATION AND E XPERIMENTAL R ESULTS
Vo · Iin 2 · (5 − 4d) · (1 − d) The proposed converter has been simulated for given spec-
VAx−mer = . (22) ifications and calculated components’ values using software
n 3
package PSIM 9.0.4 for input voltage Vin = 12 V, nominal
The calculated value is VAx−mer = 321.9 VA. output voltage Vo = 288 V, output power Po = 250 W, and
These equations are derived with the condition that device switching frequency fs = 100 kHz. Simulation results
body diode conduction time (interval 6) is quite short are illustrated in Figs. 5 and 6.
and negligible with the intention to ensure ZCS of pri- Figs. 5 and 6 coincide exactly with theoretically predicted
mary switches without significantly increasing their peak waveforms. They verify the steady-state operation and analysis
current. However, at light load of the converter (fuel cell of the converter and proposed secondary-modulation technique
stack is supplying most of the power to motor), the body presented in Section II.
diode conduction time is relatively large and (14) is not Current waveforms through the input inductor L and trans-
valid any more. Due to the longer extended body diode former leakage inductance Llk are shown in Fig. 5. The ripple
conduction, the output voltage is boosted to a higher value frequency of input inductor current iL is 2× device switching
than that of the nominal boost converter. For such cases, frequency fs , resulting in a reduction in size. The peak current
(14) is modified into following equation: through inductor Llk above the constant value is caused by the
n · Vin extended conduction of antiparallel body diode of the corre-
Vo = (23) sponding primary switch to ensure ZCS turnoff. The current
2 · (1 − d − d )
is continuous and has low peak value. Voltage waveform VAB
where d is given by in Fig. 5 shows that voltage across the primary switches is
naturally clamped at low voltage, i.e., Vo /n. Leakage induc-
2 · n · Iin · Llk · fs
d = d − 0.5 − . (24) tance voltage VLlk clearly justifies the change in slopes of the
Vo transformer primary current ilk waveform.
From (24), it can be observed that, for a given value of Fig. 6 shows current waveforms through primary switches S1
Llk and Vo , d increases as the load is decreased. At full and S2 and secondary switches S5 and S6 , including the
load, d = 0 and (23) is converted to (14). currents flowing through their respective body diodes. The
12) The relation between output power and duty cycle is current waveforms of two diagonal pairs on primary and sec-
given by ondary sides (S1 versus S2 and S5 versus S6 ) are phase-
shifted with each other by 180◦ due to modulation signals.
n · vin
2
− vo · vin · (3 − 4 · d) Owing to the proposed novel secondary-side modulation, the
P = . (25)
4 · n · Llk · fs currents through primary switches S1 and S2 naturally decrease
2312 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 61, NO. 5, MAY 2014
TABLE I
M AJOR C OMPONENTS ’ PARAMETERS OF E XPERIMENTAL P ROTOTYPE
through the primary winding ilk (50 A/div); (c) and (d) gate-
to-source voltage Vgs (10 V/div) and drain-to-source voltage
Vds (50 V/div) of primary-side devices and currents through
them (20 A/div); and (e) and (f) gate-to-source voltage Vgs
Fig. 6. Current waveforms through primary switches I(S1 ) and I(S2 ) and
secondary switches I(S5 ) and I(S6 ). (10 V/div) and drain-to-source voltage Vds (500 V/div) across
secondary-side devices and currents through them (5 A/div).
Experimental results for output power of 100 W at 300 V
are shown in Fig. 9: (a) boost inductor current iL (5 A/div);
(b) voltage across the transformer vAB (50 V/div) and current
through primary winding ilk (50 A/div); (c) and (d) gate-to-
source voltage Vgs (10 V/div) and drain-to-source voltage Vds
(20 V/div) across primary-side devices and currents through
them (20 A/div); and (e) and (f) gate-to-source voltage Vgs
(10 V/div) and drain-to-source voltage Vds (500 V/div) across
secondary-side devices and currents through them (5 A/div).
Experimental results match closely with the theoretical operat-
ing waveforms (see Fig. 3) and the simulation results.
Experimental waveforms clearly demonstrate ZVS of sec-
ondary switches and ZCS of primary switches. Figs. 8(a) and
9(a) show the boost inductor current waveforms with 2× device
Fig. 7. Photograph of the laboratory prototype. switching frequency and low ripple magnitude. Figs. 8(b) and
9(b) show the transformer primary voltage VAB that is the
to zero and then corresponding antiparallel body diodes start voltage across primary devices (i.e., positive for Vds,S2 and
conducting before the switches are turned off (i.e., gate signal negative for Vds,S1 ).
removed), which ensures ZCS turnoff. As shown in the current The device voltage is clamped at a low voltage, which allows
waveforms of S5 and S6 in Fig. 6, the antiparallel diodes the use of low-voltage devices. Primary current ilk is con-
of switches conduct prior to the conduction of corresponding tinuous, unlike traditional hard-switching and active-clamped
switches, which verifies ZVS of the secondary-side switches. A converters, and, as expected, has low peak as discussed in the
laboratory prototype of the proposed converter rated at 250 W, analysis and simulation results.
as shown in Fig. 7, has been developed to demonstrate its Figs. 8(c) and (d) and 9(c) and (d) show that the gating
performance experimentally. Details of the experimental con- signals to primary switches Vgs,S1 (top switch S1 ) and Vgs,S2
verter are given in Table I. Gating signals for the devices have (bottom switch S2 ) are removed first before voltages Vds,S1
been generated using a Xilinx Spartan-3 field-programmable and Vds,S2 across them, respectively, start rising. There is a
gate-array (FPGA) board. Two IR2181 are used to drive clear gap between these two waveforms that is caused by
primary-side MOSFETs, and two IR21814 are used to drive conduction of the antiparallel body diode of respective switch
secondary-side MOSFETs. ensuring their ZCS turnoff. The switch current naturally falls
Experimental results for output power of 250 W at 300 V to zero because of the proposed modulation and then becomes
are shown in Fig. 8: (a) boost inductor current iL (5 A/div); negative due to antiparallel body diode conduction confirming
(b) voltage across the transformer vAB (50 V/div) and current the ZCC of primary switches. Figs. 8(e) and (f) and 9(e) and (f)
XUEWEI AND RATHORE: SNUBBERLESS SOFT-SWITCHING FULL-BRIDGE ISOLATED DC/DC CONVERTER FOR FCVS 2313
[12] T.-F. Wu, Y.-C. Chen, J.-G. Yang, and C.-L. Kuo, “Isolated bidirectional Pan Xuewei (S’12) received the B.E. degree in
full-bridge DC–DC converter with a flyback snubber,” IEEE Trans. Power electronic engineering from the University of Elec-
Electron., vol. 25, no. 7, pp. 1915–1922, Jul. 2010. tronic Science and Technology of China, Chengdu,
[13] L. Zhu, “A novel soft-commutating isolated boost full-bridge ZVS-PWM China, in 2011. He is currently working toward the
DC–DC converter for bi-directional high power applications,” IEEE Ph.D. degree in the area of power electronics in the
Trans. Power Electron., vol. 21, no. 2, pp. 422–429, Mar. 2006. Department of Electrical and Computer Engineering,
[14] Y. Miura, M. Kaga, Y. Horita, and T. Ise, “Bidirectional isolated dual National University of Singapore, Singapore.
full-bridge dc–dc converter with active clamp for EDLC,” in Proc. IEEE His research interests include soft-switching
ECCE, 2010, pp. 1136–1143. methods and modulation techniques for high-
[15] K. Wang, F. C. Lee, and J. Lai, “Operation principles of bi-directional frequency power conversion for renewable energy.
full-bridge DC/DC converter with unified soft switching scheme and soft-
starting capability,” in Proc. 15th IEEE APEC, 2000, pp. 111–118.
[16] G. Chen, Y. Lee, S. Hui, D. Xu, and Y. Wang, “Actively clamped bi-
directional flyback converter,” IEEE Trans Ind. Electron., vol. 47, no. 4,
pp. 770–779, Aug. 2000.
[17] R. J. Wai, C. Y. Lin, and Y. R. Chang, “High step-up bidirectional isolated
converter with two input power sources,” IEEE Trans. Ind. Electron.,
vol. 56, no. 7, pp. 2629–2643, Jul. 2009.
[18] R. Y. Chen, R. L. Lin, T. J. Liang, J. F. Chen, and K. C. Tseng, “Current-
fed full-bridge boost converter with zero current switching for high volt-
age applications,” in Conf. Rec. IEEE 40th IAS Annu. Meeting, 2005,
pp. 2000–2006. Akshay K. Rathore (M’05–SM’12) received the
[19] S. Jalbrzykowski and T. Citko, “Current-fed resonant full-bridge boost M.Tech. degree in electrical machines and drives
DC/AC/DC converter,” IEEE Trans. Ind. Electron., vol. 55, no. 3, from the Indian Institute of Technology (Banaras
pp. 1198–1205, Mar. 2008. Hindu University), Varanasi, India, in 2003 and the
[20] C. S. Leu, P. Y. Huang, and M. H. Li, “A novel dual-inductor boost con- Ph.D. degree in power electronics from the Univer-
verter with ripple cancellation for high-voltage-gain applications,” IEEE sity of Victoria, Victoria, BC, Canada, in 2008.
Trans. Ind. Electron., vol. 58, no. 4, pp. 1268–1273, Apr. 2011. He had two subsequent postdoctoral appointments
[21] A. K. Rathore, A. K. S. Bhat, and R. Oruganti, “Analysis, design and with the Electrical Machines and Drives Laboratory,
experimental results of wide range ZVS active-clamped L-L type current- University of Wuppertal, Wuppertal, Germany, from
fed dc–dc converter for fuel cell to utility interface application,” IEEE September 2008 to August 2009 and with the Univer-
Trans. Ind. Electron., vol. 59, no. 1, pp. 473–485, Jan. 2012. sity of Illinois at Chicago, Chicago, IL, USA, from
[22] R. L. Andersen and I. Barbi, “A ZVS-PWM three-phase current-fed September 2009 to September 2010. Since November 2010, he has been an
push–pull dc–dc converter,” IEEE Trans. Ind. Electron., vol. 60, no. 3, Assistant Professor in the Department of Electrical and Computer Engineering,
pp. 838–847, Mar. 2013. National University of Singapore, Singapore. He has contributed to 70 research
[23] U. R. Prasanna and A. K. Rathore, “Extended range ZVS active-clamped papers and delivered three tutorials on current-fed soft-switching converters.
current-fed full-bridge isolated dc/dc converter for fuel cell applications: His research interests include current-fed topologies, soft-switching techniques,
Analysis, design and experimental results,” IEEE Trans. Ind. Electron., high-frequency power conversion, modulation techniques, and electric and fuel
vol. 60, no. 7, pp. 2661–2672, Jul. 2013. cell vehicles. He is pioneering the research on current-fed converters.
[24] B. Yuan, X. Yang, X. Zeng, J. Duan, J. Zhai, and D. Li, “Analysis and Dr. Rathore is an Associate Editor of the IEEE T RANSACTIONS ON I NDUS -
design of a high step-up current-fed multiresonant dc–dc converter with TRY A PPLICATIONS , the IEEE T RANSACTIONS ON P OWER E LECTRONICS ,
low circulating energy and zero-current switching for all active switches,” and the IEEE Journal on Emerging Selected Topics in Power Electronics
IEEE Trans. Ind. Electron., vol. 59, no. 2, pp. 964–978, Feb. 2012. (JESTPE). He is also an Editor of Electric Power Components and Systems
[25] F. Z. Peng, H. Li, G. J. Su, and J. S. Lawler, “A new ZVS bidirectional and a Guest Associate Editor for two special issues on transportation electrifi-
dc–dc converter for fuel cell and battery application,” IEEE Trans. Power cation and vehicle systems in the IEEE T RANSACTIONS ON P OWER E LEC -
Electron., vol. 19, no. 1, pp. 54–65, Jan. 2004. TRONICS and IEEE JESTPE. He was a recipient of Thouvenelle Graduate
[26] I. O. Lee, S. Y. Cho, and G. W. Moon, “Phase-shifted dual H-bridge Scholarship and University fellowship during his Ph.D. study and of a gold
converter with a wide ZVS range and reduced output filter,” in Proc. 38th medal for securing the highest academic standing in M.Tech. electrical engi-
IEEE IECON, 2012, pp. 656–661. neering specialization.