Historia de Revisiones
Rev. Razon y Resumen del Cambio
1 Nueva creación por cambio de MIL-PRF-123 Rev E
evisiones
Persona que Revisa QOD # (Si aplica)
Marisol Robledo JET:0221-1795
pag 1 of 3
KEMET ELECTRONICS CORPORATION
DESTRUCTIVE PHYSICAL ANALYSIS REPORT
IN ACCORDANCE WITH MIL-PRF 123
(Non-Leaded Devices)
Date Lot Code : 2505A1 Kemet P/N: C0805A220F2GAH
Customer : Customer P/N:
P.O. Number: CHip Lot Number 4355255B03
Lot Quantity: 1002 Accept/Reject: ACCEPT
*******************************************************************************************
FINAL END TERMINATION EXAMINATION (GROUP 2)
(Cross-sectioned)
SAMPLE SIZE : 5 (ACCEPT/REJECT = 0/1) ACCEPT REJECT
1. Any separation between end metallization layers
which exceeds .005". 5 0
2. Discontinuous barrier layer which displays intermittent
coverage or cannot be verified as present and uniformly
deposited. 5 0
3. Peeling end metallization exceeding .005", not including
overthrow. 5 0
4. Solderable coating less than .0001" for more than .020",
accumulatively measured. 5 0
Inspected By: JOHAN HDZ. Date: 3/12/2025
F-QCM0302 Rev.1
DESTRUCTIVE PHYSICAL ANALYSIS REPORT pag 2 of 3
IN ACCORDANCE WITH MIL-PRF-123
(CROSS-SECTIONED CHIP EXAMINATION)
Date Lot Code : 2505A1 Kemet P/N: C0805A220F2GAH Date: 1/22/2025
Chip Lot Number : 4355255B03 Sample Size: 50 A/R: 2/3
Inspected By: PN No.of Defects: 0 Accept/Reject: ACCEPT
*******************************************************************************************
ITEM CROSS- SECTIONED SAMPLE EXAMINATION- DEFECTS ACCEPT REJECT
1. Any single delamination within the active area of electrode overlap,
which exceeds 20% of the total electrode length, or 0.010" (.25mm),
whichever is greater. 50 0
2. A delamination in, or parallel to the plane of, an electrode within
active area of electrode overlap, greater than .005" (.13mm) in
length, which results in the displacement of the two adjacent
dielectric layers by more than 50% of the average dielectric thickness 50 0
3. Two or more delaminations within the active area, greater than .010"
(.25mm) in length, and which overlap each other in two or more
adjacent layers. 50 0
4. Any delamination, regardless of length, which exceeds more than
50% of the distance from one termination to the approaching end of
an opposing electrode. Such delaminations or cracks are known as
"knitline defects". 50 0
5. Any delamination in the side margin which opens the surface of the
ceramic element. 50 0
6. Any void between adjacent opposed electrodes which reduces the
nominal thickness by more than 50% along a line perpendicular to
adjacent electrodes. 50 0
7. Any void or pinhole in the cover plate ceramic which reduces the
thickness of the cover plate to less than .003" (.08mm) or to less
than .0008" (.02mm) for each 50 volts of rated voltage 50 0
8. Side or end margin displaying a thickness of less than .003" (.08mm)
uninterrupted ceramic. 50 0
9. Cover plates less than .003" (.08mm), or having less ceramic than
.0008" (.02mm) for each 50 volts of rated voltage, whichever is less. 50 0
10. Any end margin less than .005" (.13mm) for chips greater than or
equal to .100" (2.5mm) in length or less than .003" for chips less than
.100" in length. 50 0
11. Any crack in the dielectric which connects any two electrodes. 50 0
F-QCM0302 Rev.1
pag 3 of 3
Date Lot Code : 2505A1 Date: 1/22/2025
ITEM CROSS- SECTIONED SAMPLE EXAMINATION- DEFECTS ACCEPT REJECT
12. Any crack in the ceramic which connects an electrode with the
surface of the capacitor element or the electrode of an opposed
termination. 50 0
13. Any variation in dielectric thickness within the active area which
results in more than 30% reduction in the thickness of any dielectric
layer compared to the measured average for all other dielectric thicknesses. 50 0
14. Any electrode thickness variation which causes an electrode to
exceed two and one half times the average electrode to exceed two
and one half times the average electrode thickness for 50% or more
of the electrode length. 50 0
15. Any abrupt change in electrode thickness which reduces the average
thickness of the adjacent dielectric by more than 30% for a distance
exceeding .005" (.13mm) in the plane of the electrode. 50 0
16. Any void in the termination material adjacent to the electrodes, which
spans more than 35% of the electrode stack. 50 0
17. Any series of voids within the termination material whose total
length exceeds 50% of the chip thickness or a single void which
measures greater than .020". 50 0
18. Any loosening of end termination metallization for a distance
exceeding .010" or any separation or lifting of the termination material
for a distance greater than .005" (.13mm). 50 0
F-QCM0302 Rev.1
