VND830LSP
VND830LSP
Features
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 16
3.1.1 Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 16
3.1.2 Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . 17
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
List of tables
List of figures
Vcc OVERVOLTAGE
CLAMP
UNDERVOLTAGE
GND CLAMP 1
OUTPUT1
INPUT1 DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1 DRIVER 2
LOGIC
OVERTEMP. 1 OUTPUT2
OPEN LOAD ON 1
CURRENT LIMITER 2
INPUT2
GROUND 6 5 OUTPUT 1
INPUT 1 7 4 OUTPUT 1
STATUS 1 8 3 N.C.
STATUS 2 9 2 OUTPUT 2
INPUT 2 10 OUTPUT 2
1
11
VCC
Floating X X X X
Through 10KΩ
To ground X
resistor
2 Electrical specifications
IS
Note:
VFn = VCCn - VOUTn during reverse battery condition.
Operating supply
VCC 5.5 13 36 V
voltage
VUSD Undervoltage shutdown 3 4 5.5 V
VOV Overvoltage shutdown 36 V
IOUT = 2A; Tj = 25°C 60 mΩ
RON On-state resistance
IOUT = 2A; VCC > 8V 120 mΩ
Off-state; VCC = 13 V;
12 40 µA
VIN = VOUT = 0 V
Off-state; VCC = 13 V;
IS Supply current VIN = VOUT = 0 V; 12 25 µA
Tj = 25 °C
On-state; VCC = 13 V; VIN = 5 V;
5 7 mA
IOUT = 0 A
IL(off1) Off-state output current VIN = VOUT = 0 V 0 50 µA
IL(off2) Off-state output current VIN = 0V; VOUT = 3.5 V -75 0 µA
VIN = VOUT = 0 V; VCC = 13 V;
IL(off3) Off-state output current 5 µA
Tj = 125 °C
VIN = VOUT = 0 V; VCC = 13 V;
IL(off4) Off-state output current 3 µA
Tj = 25 °C
Table 6. Protections
Symbol Parameter Test conditions Min. Typ. Max. Unit
Note: To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
OPEN LOAD STATUS TIMING (with external pull-up) OVER TEMP STATUS TIMING
VOUT > VOL IOUT < IOL
Tj > TTSD
VINn
VINn
VSTATn
VSTATn
tSDL tSDL
tDOL(off)
tDOL(on)
L L H
Normal operation
H H H
L L H
Current limitation H X (Tj < TTSD) H
H X (Tj > TTSD) L
L L H
Overtemperature
H L L
L L X
Undervoltage
H L X
L L H
Overvoltage
H L H
L H L
Output voltage > VOL
H H H
L L H
Output current < IOL
H H L
Figure 6. Waveforms
NORMAL OPERATION
INPUTn
LOAD VOLTAGEn
STATUSn
UNDERVOLTAGE
VCC VUSDhyst
VUSD
INPUTn
LOAD VOLTAGEn
STATUS undefined
OVERVOLTAGE
VCC<VOV VCC > VOV
VCC
INPUTn
LOAD VOLTAGEn
STATUSn
INPUTn
VOUT > VOL
LOAD VOLTAGEn
VOL
STATUSn
LOAD VOLTAGEn
STATUSn
OVERTEMPERATURE
Tj TTSD
TR
INPUTn
LOAD CURRENTn
STATUSn
1.2 5.25
Off State
Vin=3.25V
1.05 Vcc=13V 4.5
Vin=Vout=0V
0.9
3.75
0.75
3
0.6
2.25
0.45
1.5
0.3
0.15 0.75
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
7.8
700
Iin=1mA Vcc=13V
7.6
Rl=6.5Ohm
600
7.4
7.2 500
7 400
6.8
300
6.6
200
6.4
6.2 100
6 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (ºC)
48 700
Vcc=13V
46 Rl=6.5Ohm
600
44
500
42
40 400
38 300
36
200
34
100
32
30 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (ºC)
32.5
Vcc=13V 140
30 Iout=2A
120
27.5
25 100
22.5 Tc=150ºC
80
20
60
17.5 Tc=25ºC
40
15 Tc= -40ºC
12.5 20
10 0
-50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40
Tc (ºC) Vcc (V)
Figure 15. Input high level Figure 16. Input hysteresis voltage
Vih (V)
Vhyst (V)
4
1.5
3.8
1.4
3.6
1.3
3.4
1.2
3.2
1.1
3
1
2.8
0.9
2.6
0.8
2.4
0.7
2.2
0.6
2
0.5
-50 -25 0 25 50 75 100 125 150 175
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (°C)
Figure 17. On-state resistance vs Tcase Figure 18. Input low level
90 2.125
80
Iout=2A
Vcc=13V 2
70
1.875
60
50 1.75
40 1.625
30
1.5
20
1.375
10
0 1.25
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
Figure 19. Status leakage current Figure 20. Status low output voltage
Ilstat (µA) Vstat (V)
0.07 0.8
0.06 0.7
Istat=1.6mA
Vstat=5V
0.6
0.05
0.5
0.04
0.4
0.03
0.3
0.02
0.2
0.01 0.1
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
Figure 21. Status clamp voltage Figure 22. Open-load on-state detection
threshold
Vscl (V) Iol (A)
8 2
7.8
1.75
Istat=1mA
7.6 Vin=5V
1.5
7.4
1.25
7.2
7 1
6.8
0.75
6.6
0.5
6.4
0.25
6.2
6 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (ºC)
4.5
Vin=0V
4
3.5
2.5
1.5
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
3 Application information
+5V +5V
+5V
VCC
Rprot STATUS1
Dld
μC Rprot INPUT1
OUTPUT1
Rprot STATUS2
Rprot INPUT2
GND OUTPUT2
RGND
VGND DGND
Please note that, if the microprocessor ground is not shared by the device ground, then the
RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same RGND .
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
Example
For the following conditions:
VCCpeak = -100 V
Ilatchup ≥ 20 mA
VOHμC ≥ 4.5 V
5 kΩ ≤ Rprot ≤ 65 kΩ.
Recommended values are:
Rprot = 10 kΩ
V batt. VPU
VCC
RPU
DRIVER
INPUT + IL(off2)
LOGIC
OUT
+
R
-
STATUS
VOL
RL
GROUND
I LM AX (A)
100
10
C B
1
0,01 0,1 1 10 100
L(mH)
VIN, IL
Demagnetization Demagnetization Demagnetization
Note:
Values are generated with RL = 0Ω.
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature
specified above for curves B and C.
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm, Cu thickness =
35 µm, Copper areas: from minimum pad lay-out to 8 cm2).
Figure 28. Rthj-amb vs PCB copper area in open box free air condition
RTHj_amb (°C/W)
55
Tj-Tamb=50°C
50
45
40
35
30
0 2 4 6 8 10
PCB Cu heatsink area (cm^2)
100
0.5 cm2
6 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where δ = tp ⁄ T
Tj_1 C1 C2 C3 C4 C5 C6
R1 R2 R3 R4 R5 R6
Pd1
C1 C2
Tj_2
R1 R2
Pd2
T_amb
R1 (°C/W) 0.15
R2 (°C/W) 0.8
R3 (°C/W) 0.7
R4 (°C/W) 0.8
R5 (°C/W) 12
R6 (°C/W) 37 22
C1 (W.s/°C) 0.0006
C2 (W.s/°C) 2.1E-03
C3 (W.s/°C) 0.013
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.75
C6 (W.s/°C) 3 5
0.10 A B
10
H E E2 E E4
1
SEATING
PLANE
e B DETAIL "A" A
0.25 C
D
h = D1 =
= =
SEATING
PLANE
A
F
A1 A1
L
DETAIL "A"
A 3.35 3.65
A1 0 0.10
B 0.40 0.60
C 0.35 0.55
D 9.40 9.60
D1 7.40 7.60
E 9.30 9.50
E2 7.20 7.60
E4 5.90 6.10
e 1.27
F 1.25 1.35
H 13.80 14.40
h 0.50
L 1.20 1.80
α 0° 8°
α(1) 2° 8°
10.8 - 11
B CASABLANCA MUAR
C
6.30
A C
A
0.67 - 0.73 B
1 10
0.54 - 0.6
2 9
All dimensions are in mm.
3 8
9.5
4 7 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)
5 6 Casablanca 50 1000 532 10.4 16.4 0.8
Muar 50 1000 532 4.9 17.2 0.8
Reel dimensions
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 24
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2
Start
6 Revision history
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