TS4990

1.2 W audio power amplifier with active-low standby mode

Features TS4990IJT/TS4990EIJT - Flip-chip 9 bumps

■ Operating range from VCC = 2.2 V to 5.5 V
■ 1.2 W output power at VCC = 5 V, THD = 1%, Vin+ VCC STBY
F = 1 kHz, with 8 Ω load
■ Ultra-low consumption in standby mode (10 nA) VOUT1 GND VOUT2

■ 62 dB PSRR at 217 Hz in grounded mode

■ Near-zero pop and click Vin- GND BYPASS

■ Ultra-low distortion (0.1%)

■ Unity gain stable TS4990IST - MiniSO-8
■ Available in 9-bump flip-chip, miniSO-8 and
DFN8 packages

Applications
■ Mobile phones (cellular / cordless)
■ Laptop / notebook computers
■ PDAs
■ Portable audio devices TS4990IQT - DFN8

Description
STANDBY 1 8 VOUT2
The TS4990 is designed for demanding audio
applications such as mobile phones to reduce the BYPASS 2 7 GND

number of external components. VIN+ 3 6 VCC

This audio power amplifier is capable of delivering VIN– 4 5 VOUT1

1.2 W of continuous RMS output power into an
8 Ω load at 5 V.
An externally controlled standby mode reduces TS4990ID/TS4990IDT - SO-8
the supply current to less than 10 nA. It also
includes an internal thermal shutdown protection. STBY 1 8 VOUT2
The unity-gain stable amplifier can be configured
by external gain setting resistors. BYPASS 2 7 GND

VIN+ 3 6 VCC

VIN- 4 5 VOUT1

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 Contents TS4990

Contents

1 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3

2 Typical application schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1 BTL configuration principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.2 Gain in a typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3 Low and high frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.4 Power dissipation and efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.5 Decoupling of the circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.6 Wake-up time (tWU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.7 Standby time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.8 Pop performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.9 Application example: differential input, BTL power amplifier . . . . . . . . . . 23

5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1 Flip-chip package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.2 MiniSO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
5.3 DFN8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5.4 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

6 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

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 TS4990 Absolute maximum ratings and operating conditions

1 Absolute maximum ratings and operating conditions

Table 1. Absolute maximum ratings (AMR)

Symbol Parameter Value Unit

VCC Supply voltage (1) 6 V

Vin (2)
Input voltage GND to VCC V
Toper Operating free-air temperature range -40 to + 85 °C
Tstg Storage temperature -65 to +150 °C
Tj Maximum junction temperature 150 °C
Thermal resistance junction to ambient
Rthja Flip-chip (3) 250 °C/W
MiniSO-8 215
DFN8 120
Pdiss Power dissipation Internally limited
(4)
HBM: Human body model 2 kV
ESD
MM: Machine model(5) 200 V
Latch-up immunity 200 mA
Lead temperature (soldering, 10sec) 250
°C
Lead temperature (soldering, 10sec) for lead-free version 260
1. All voltage values are measured with respect to the ground pin.
2. The magnitude of the input signal must never exceed VCC + 0.3 V / GND - 0.3 V.
3. The device is protected in case of over temperature by a thermal shutdown active at 150° C.
4. Human body model: A 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
5. Machine model: A 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations
while the other pins are floating.

Table 2. Operating conditions

Symbol Parameter Value Unit

VCC Supply voltage 2.2 to 5.5 V

Vicm Common mode input voltage range 1.2V to VCC V
Standby voltage input:
VSTBY Device ON 1.35 ≤ VSTBY ≤ VCC V
Device OFF GND ≤ VSTBY ≤ 0.4
RL Load resistor ≥4 Ω
TSD Thermal shutdown temperature 150 °C
Thermal resistance junction to ambient
Rthja Flip-chip (1) 100 °C/W
MiniSO-8 190
DFN8(2) 40
1. This thermal resistance is reached with a 100 mm2 copper heatsink surface.
2. When mounted on a 4-layer PCB.

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 Typical application schematics TS4990

2 Typical application schematics

Figure 1. Typical application schematics

Rfeed

Cfeed Vcc

+
Cs

VCC
Audio In Cin
Rin
Vin- -
Vout 1

Vin+
Speaker
+
8 Ohms

-
Vout 2
AV = -1
Bypass +

Standby Standby
Bias
Control
GND

TS4990
+

Cb

Table 3. Component descriptions

Component Functional description

Inverting input resistor that sets the closed loop gain in conjunction with Rfeed. This
Rin
resistor also forms a high pass filter with Cin (Fc = 1 / (2 x Pi x Rin x Cin)).
Cin Input coupling capacitor that blocks the DC voltage at the amplifier input terminal.
Rfeed Feed back resistor that sets the closed loop gain in conjunction with Rin.
Cs Supply bypass capacitor that provides power supply filtering.
Cb Bypass pin capacitor that provides half supply filtering.
Low pass filter capacitor allowing to cut the high frequency (low pass filter cut-off
Cfeed
frequency 1/ (2 x Pi x Rfeed x Cfeed)).
AV Closed loop gain in BTL configuration = 2 x (Rfeed / Rin).
DFN8 exposed pad is electrically connected to pin 7. See DFN8 package
Exposed pad
information on page 29 for more information.

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 TS4990 Electrical characteristics

3 Electrical characteristics

Table 4. Electrical characteristics when VCC = +5 V, GND = 0 V, Tamb = 25°C

(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit

Supply current
ICC 3.7 6 mA
No input signal, no load
Standby current (1)
ISTBY 10 1000 nA
No input signal, VSTBY = GND, RL = 8Ω
Output offset voltage
Voo 1 10 mV
No input signal, RL = 8 Ω
Output power
Pout 0.9 1.2 W
THD = 1% max, F = 1kHz, RL = 8 Ω
Total harmonic distortion + noise
THD + N 0.2 %
Pout = 1Wrms, AV = 2, 20Hz ≤ F ≤ 20kHz, RL = 8 Ω
Power supply rejection ratio(2)
RL = 8 Ω, AV = 2, Vripple = 200mVpp, input grounded
PSRR dB
F = 217Hz 55 62
F = 1kHz 55 64
tWU Wake-up time (Cb = 1 µF) 90 130 ms
tSTBY Standby time (Cb = 1 µF) 10 µs
VSTBYH Standby voltage level high 1.3 V
VSTBYL Standby voltage level low 0.4 V
Phase margin at unity gain
ΦM 65 Degrees
RL = 8 Ω, CL = 500 pF
Gain margin
GM 15 dB
RL = 8 Ω, CL = 500 pF
Gain bandwidth product
GBP 1.5 MHz
RL = 8 Ω
Resistor output to GND (VSTBY ≤ VSTBYL)
ROUT-GND Vout1 3 kΩ
Vout2 43
1. Standby mode is active when VSTBY is tied to GND.
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon
VCC.

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 Electrical characteristics TS4990

Table 5. Electrical characteristics when VCC = +3.3 V, GND = 0 V, Tamb = 25°C

(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit

Supply current
ICC 3.3 6 mA
No input signal, no load
Standby current (1)
ISTBY 10 1000 nA
No input signal, VSTBY = GND, RL = 8 Ω
Output offset voltage
Voo 1 10 mV
No input signal, RL = 8 Ω
Output power
Pout 375 500 mW
THD = 1% max, F = 1 kHz, RL = 8 Ω
Total harmonic distortion + noise
THD + N Pout = 400 mWrms, AV = 2, 20 Hz ≤ F ≤ 20 kHz, 0.1 %
RL = 8 Ω
Power supply rejection ratio(2)
RL = 8 Ω, AV = 2, Vripple = 200mVpp, input grounded
PSRR dB
F = 217 Hz 55 61
F = 1 kHz 55 63
tWU Wake-up time (Cb = 1 µF) 110 140 ms
tSTBY Standby time (Cb = 1 µF) 10 µs
VSTBYH Standby voltage level high 1.2 V
VSTBYL Standby voltage level low 0.4 V
Phase margin at unity gain
ΦM 65 Degrees
RL = 8 Ω, CL = 500 pF
Gain margin
GM 15 dB
RL = 8 Ω, CL = 500 pF
Gain bandwidth product
GBP 1.5 MHz
RL = 8 Ω
Resistor output to GND (VSTBY ≤ VSTBYL)
ROUT-GND Vout1 4 kΩ
Vout2 44
1. Standby mode is active when VSTBY is tied to GND.
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon
VCC.

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 TS4990 Electrical characteristics

Table 6. Electrical characteristics when VCC = 2.6V, GND = 0V, Tamb = 25°C (unless
otherwise specified)
Symbol Parameter Min. Typ. Max. Unit

Supply current
ICC 3.1 6 mA
No input signal, no load
Standby current (1)
ISTBY 10 1000 nA
No input signal, VSTBY = GND, RL = 8 Ω
Output offset voltage
Voo 1 10 mV
No input signal, RL = 8 Ω
Output power
Pout 220 300 mW
THD = 1% max, F = 1 kHz, RL = 8 Ω
Total harmonic distortion + noise
THD + N Pout = 200 mWrms, AV = 2, 20 Hz ≤ F ≤ 20 kHz, 0.1 %
RL = 8 Ω
Power supply rejection ratio(2)
RL = 8 Ω, AV = 2, Vripple = 200 mVpp, input grounded
PSRR dB
F = 217 Hz 55 60
F = 1 kHz 55 62
tWU Wake-up time (Cb = 1 µF) 125 150 ms
tSTBY Standby time (Cb = 1 µF) 10 µs
VSTBYH Standby voltage level high 1.2 V
VSTBYL Standby voltage level low 0.4 V
Phase margin at unity gain
ΦM 65 Degrees
RL = 8 Ω, CL = 500 pF
Gain margin
GM 15 dB
RL = 8 Ω, CL = 500 pF
Gain bandwidth product
GBP 1.5 MHz
RL = 8 Ω
Resistor output to GND (VSTBY ≤ VSTBYL)
ROUT-GND Vout1 6 kΩ
Vout2 46
1. Standby mode is active when VSTBY is tied to GND.
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon
VCC.

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 Electrical characteristics TS4990

Figure 2. Open loop frequency response Figure 3. Open loop frequency response

60 0 60 0
Gain
Gain
40 40
-40 -40

20 Phase 20

Phase (°)

Phase (°)
Phase
-80 -80
Gain (dB)

Gain (dB)
0 0
-120 -120
-20 -20

Vcc = 5V -160 Vcc = 3.3V -160

-40 -40
RL = 8Ω RL = 8Ω
Tamb = 25°C Tamb = 25°C
-60 -200 -60 -200
0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

Figure 4. Open loop frequency response Figure 5. Open loop frequency response

60 0 100 0
Gain
40 80 Gain
-40 -40
60
20
Phase (°)

Phase (°)
Phase
-80 -80
Gain (dB)

Gain (dB)

40
0 Phase
20
-120 -120
-20
0
Vcc = 2.6V -160 Vcc = 5V -160
-40 -20
RL = 8Ω CL = 560pF
Tamb = 25°C Tamb = 25°C
-60 -200 -40 -200
0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

Figure 6. Open loop frequency response Figure 7. Open loop frequency response

100 0 100 0

80 Gain 80 Gain
-40 -40
60 60
Phase (°)

Phase (°)

-80 -80
Gain (dB)

Gain (dB)

40 40
Phase Phase
20 20
-120 -120

0 0
Vcc = 3.3V -160 Vcc = 2.6V -160
-20 CL = 560pF -20 CL = 560pF
Tamb = 25°C Tamb = 25°C
-40 -200 -40 -200
0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

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 TS4990 Electrical characteristics

Figure 8. PSRR vs. power supply Figure 9. PSRR vs. power supply

0 0

Vripple = 200mVpp Vripple = 200mVpp

-10 Vcc :
Av = 2 -10 Av = 10
2.2V
Input = Grounded Input = Grounded
-20 2.6V
Cb = Cin = 1μF Vcc : Cb = Cin = 1μF
3.3V
RL >= 4Ω -20 RL >= 4Ω
PSRR (dB)

PSRR (dB)
2.2V 5V
-30 Tamb = 25°C 2.6V Tamb = 25°C
3.3V
-30
-40 5V

-50 -40

-60
-50
-70
100 1000 10000 100000 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

Figure 10. PSRR vs. power supply Figure 11. PSRR vs. power supply

0 0

-10 Vripple = 200mVpp Vripple = 200mVpp

Vcc = 2.2, 2.6, 3.3, 5V Vcc :
Rfeed = 22kΩ -10 Av = 5
2.2V
-20 Input = Floating Input = Grounded
2.6V
Cb = 1μF Cb = Cin = 1μF
-20 3.3V
RL >= 4Ω RL >= 4Ω
PSRR (dB)

PSRR (dB)

-30
5V
Tamb = 25°C Tamb = 25°C
-40 -30

-50
-40
-60
-50
-70

-80 -60
100 1000 10000 100000 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

Figure 12. PSRR vs. power supply Figure 13. PSRR vs. power supply

0 0

Vripple = 200mVpp -10 Vripple = 200mVpp

Vcc = 2.2, 2.6, 3.3, 5V
-10 Av = 2 Rfeed = 22kΩ
Input = Grounded -20 Input = Floating
Cb = 0.1μF, Cin = 1μF Cb = 0.1μF
-20
RL >= 4Ω RL >= 4Ω
PSRR (dB)

PSRR (dB)

-30
Tamb = 25°C Tamb = 25°C
-30 -40

Vcc = 5, 3.3, 2.5 & 2.2V -50

-40
-60
-50
-70

-60 -80
100 1000 10000 100000 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

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 Electrical characteristics TS4990

Figure 14. PSRR vs. DC output voltage Figure 15. PSRR vs. DC output voltage

0 0
Vcc = 5V Vcc = 5V
-10 Vripple = 200mVpp Vripple = 200mVpp
RL = 8Ω -10 RL = 8Ω
-20 Cb = 1μF Cb = 1μF
AV = 2 AV = 10
PSRR (dB)

PSRR (dB)
-30 Tamb = 25°C -20 Tamb = 25°C

-40
-30

-50
-40
-60

-70 -50
-5 -4 -3 -2 -1 0 1 2 3 4 5 -5 -4 -3 -2 -1 0 1 2 3 4 5
Differential DC Output Voltage (V) Differential DC Output Voltage (V)

Figure 16. PSRR vs. DC output voltage Figure 17. PSRR vs. DC output voltage

0 0
Vcc = 3.3V Vcc = 5V
-10 Vripple = 200mVpp Vripple = 200mVpp
-10
RL = 8Ω RL = 8Ω
Cb = 1μF Cb = 1μF
-20 AV = 5 -20 AV = 5
PSRR (dB)

PSRR (dB)

Tamb = 25°C Tamb = 25°C

-30 -30

-40 -40

-50 -50

-60 -60
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -5 -4 -3 -2 -1 0 1 2 3 4 5
Differential DC Output Voltage (V) Differential DC Output Voltage (V)

Figure 18. PSRR vs. DC output voltage Figure 19. PSRR vs. DC output voltage

0 0
Vcc = 3.3V Vcc = 3.3V
-10 Vripple = 200mVpp Vripple = 200mVpp
RL = 8Ω -10 RL = 8Ω
-20 Cb = 1μF Cb = 1μF
AV = 2 AV = 10
PSRR (dB)

PSRR (dB)

Tamb = 25°C -20 Tamb = 25°C

-30

-40
-30

-50
-40
-60

-70 -50
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Differential DC Output Voltage (V) Differential DC Output Voltage (V)

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 TS4990 Electrical characteristics

Figure 20. PSRR vs. DC output voltage Figure 21. PSRR vs. DC output voltage

0 0
Vcc = 2.6V Vcc = 2.6V
-10 Vripple = 200mVpp Vripple = 200mVpp
RL = 8Ω -10 RL = 8Ω
Cb = 1μF Cb = 1μF
-20
AV = 2 AV = 10
PSRR (dB)

Tamb = 25°C Tamb = 25°C

PSRR (dB)
-20
-30

-40
-30

-50
-40
-60

-70 -50
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
Differential DC Output Voltage (V) Differential DC Output Voltage (V)

Figure 22. Output power vs. power supply Figure 23. PSRR vs. DC output voltage
voltage

2.4 0
Vcc = 2.6V
2.2 RL = 4Ω
F = 1kHz Vripple = 200mVpp
2.0 THD+N=10% -10
BW < 125kHz RL = 8Ω
1.8 Tamb = 25°C Cb = 1μF
Output power (W)

1.6 -20 AV = 5
PSRR (dB)

Tamb = 25°C
1.4
1.2 -30
1.0
0.8 -40
THD+N=1%
0.6
0.4 -50
0.2
0.0 -60
2.5 3.0 3.5 4.0 4.5 5.0 5.5 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
Vcc (V) Differential DC Output Voltage (V)

Figure 24. PSRR at F = 217 Hz vs. Figure 25. Output power vs. power supply
bypass capacitor voltage

2.0
-30 Av=10 RL = 8Ω
Vcc: 1.8
F = 1kHz
2.6V 1.6 BW < 125kHz
PSRR at 217Hz (dB)

-40 3.3V Tamb = 25°C

5V 1.4
Output power (W)

THD+N=10%
1.2
-50
Av=2 1.0

-60 Vcc: 0.8

2.6V Av=5
3.3V Vcc: 0.6
2.6V THD+N=1%
-70 5V 0.4
3.3V
5V Tamb=25°C 0.2
-80 0.0
0.1 1 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Bypass Capacitor Cb ( F) Vcc (V)

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 Electrical characteristics TS4990

Figure 26. Output power vs. power supply Figure 27. Output power vs. load resistor
voltage

1.2 2.2
RL = 16Ω 2.0 Vcc = 5V
F = 1kHz F = 1kHz
1.0 1.8
BW < 125kHz BW < 125kHz
Tamb = 25°C 1.6 Tamb = 25°C

Output power (W)

Output power (W)

0.8 THD+N=10% 1.4 THD+N=10%

1.2
0.6
1.0

0.4 0.8

THD+N=1% 0.6
0.2 0.4 THD+N=1%
0.2
0.0 0.0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 4 8 12 16 20 24 28 32
Vcc (V) Load Resistance ( )

Figure 28. Output power vs. load resistor Figure 29. Output power vs. power supply
voltage

0.6 0.6
Vcc = 2.6V RL = 32Ω
F = 1kHz F = 1kHz
0.5 0.5
BW < 125kHz BW < 125kHz
Tamb = 25°C Tamb = 25°C
Output power (W)

Output power (W)

0.4 0.4 THD+N=10%

THD+N=10%
0.3 0.3

0.2 0.2
THD+N=1%
THD+N=1%
0.1 0.1

0.0 0.0
4 8 12 16 20 24 28 32 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Load Resistance ( ) Vcc (V)

Figure 30. Output power vs. load resistor Figure 31. Power dissipation vs. Pout

1.0 1.4
Vcc = 3.3V Vcc=5V
F = 1kHz 1.2 F=1kHz
0.8 BW < 125kHz THD+N<1% RL=4Ω
Power Dissipation (W)

Tamb = 25°C 1.0

Output power (W)

THD+N=10%
0.6 0.8

0.6
0.4

0.4 RL=8Ω
0.2
0.2
THD+N=1%
RL=16Ω
0.0 0.0
8 16 24 32 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Load Resistance ( ) Output Power (W)

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 TS4990 Electrical characteristics

Figure 32. Power dissipation vs. Pout Figure 33. Power derating curves

Flip-Chip Package Power Dissipation (W)

0.6
Vcc=3.3V 1.2 2
Heat sink surface ≈ 100mm
F=1kHz
0.5 THD+N<1% (See demoboard)
RL=4Ω
1.0
Power Dissipation (W)

0.4
0.8

0.3
0.6

0.2 0.4
RL=8Ω

0.1 0.2 No Heat sink

RL=16Ω
0.0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150
Output Power (W) Ambiant Temperature ( C)

Figure 34. Clipping voltage vs. power supply Figure 35. Power dissipation vs. Pout
voltage and load resistor

0.7 0.40
Tamb = 25°C Vcc=2.6V
0.6 RL = 4Ω 0.35 F=1kHz
Clipping Voltage Low side (V)

THD+N<1%
0.30 RL=4Ω
Power Dissipation (W)

0.5
0.25
Vout1 & Vout2

0.4
RL = 8Ω 0.20
0.3
0.15
0.2 RL=8Ω
0.10

0.1 0.05
RL=16Ω
RL = 16Ω
0.0 0.00
2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.1 0.2 0.3 0.4
Power supply Voltage (V) Output Power (W)

Figure 36. Clipping voltage vs. power supply Figure 37. Current consumption vs. power
voltage and load resistor supply voltage

0.6 4.0
Tamb = 25°C RL = 4Ω
No load
3.5 Tamb=25°C
Clipping Voltage High side (V)

0.5
Current Consumption (mA)

3.0
0.4
Vout1 & Vout2

2.5
RL = 8Ω
0.3 2.0

1.5
0.2
1.0
0.1
0.5
RL = 16Ω
0.0 0.0
2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5
Power supply Voltage (V) Power Supply Voltage (V)

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 Electrical characteristics TS4990

Figure 38. Current consumption vs. standby Figure 39. Current consumption vs. standby
voltage @ VCC = 5V voltage @ VCC = 2.6V

4.0 4.0
Vcc = 2.6V
3.5 3.5 No load
Tamb=25°C
Current Consumption (mA)

Current Consumption (mA)

3.0 3.0

2.5 2.5

2.0 2.0

1.5 1.5

1.0 1.0
Vcc = 5V
0.5 No load 0.5
Tamb=25°C
0.0 0.0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
Standby Voltage (V) Standby Voltage (V)

Figure 40. THD + N vs. output power Figure 41. Current consumption vs. standby
voltage @ VCC = 3.3V

10 4.0
Vcc = 3.3V
RL = 4Ω 3.5 No load
F = 20Hz Tamb=25°C
Current Consumption (mA)

Av = 2 3.0
Cb = 1μF Vcc=2.2V
THD + N (%)

BW < 125kHz 2.5

1
Tamb = 25°C Vcc=2.6V
2.0

1.5

1.0
0.1
0.5
Vcc=3.3V
Vcc=5V
0.0
1E-3 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Power (W) Standby Voltage (V)

Figure 42. Current consumption vs. standby Figure 43. THD + N vs. output power
voltage @ VCC = 2.2V

4.0 10
Vcc = 2.2V
RL = 8Ω
3.5 No load
Tamb=25°C F = 20Hz
Current Consumption (mA)

3.0 Av = 2
Cb = 1μF
1 BW < 125kHz
THD + N (%)

2.5 Vcc=2.2V
Tamb = 25°C
2.0
Vcc=2.6V
1.5
0.1
1.0

0.5
Vcc=3.3V Vcc=5V
0.0 0.01
0.0 0.5 1.0 1.5 2.0 1E-3 0.01 0.1 1
Standby Voltage (V) Output Power (W)

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 TS4990 Electrical characteristics

Figure 44. THD + N vs. output power Figure 45. THD + N vs. output power

10 10
RL = 16Ω RL = 8Ω
F = 20kHz F = 1kHz
Av = 2 Av = 2
Cb = 1μF Vcc=2.2V Cb = 1μF
1 1 BW < 125kHz
THD + N (%)

THD + N (%)
BW < 125kHz Vcc=2.2V
Tamb = 25°C Tamb = 25°C
Vcc=2.6V

Vcc=2.6V

0.1 0.1

Vcc=3.3V Vcc=5V Vcc=3.3V Vcc=5V

0.01 0.01
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
Output Power (W) Output Power (W)

Figure 46. THD + N vs. output power Figure 47. THD + N vs. output power

10 10
RL = 4Ω RL = 4Ω
F = 20kHz F = 1kHz
Av = 2 Av = 2
Cb = 1μF Vcc=2.2V Cb = 1μF Vcc=2.2V
THD + N (%)

THD + N (%)

BW < 125kHz BW < 125kHz

1 Tamb = 25°C
Tamb = 25°C Vcc=2.6V Vcc=2.6V
1

0.1

Vcc=3.3V
Vcc=3.3V Vcc=5V Vcc=5V
0.1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
Output Power (W) Output Power (W)

Figure 48. THD + N vs. output power Figure 49. THD + N vs. output power

10 10
RL = 16Ω RL = 8Ω
F = 1kHz F = 20kHz
Av = 2 Av = 2
1 Cb = 1μF Vcc=2.2V Cb = 1μF
THD + N (%)

THD + N (%)

BW < 125kHz BW < 125kHz Vcc=2.2V

Tamb = 25°C 1
Vcc=2.6V Tamb = 25°C

Vcc=3.3V Vcc=2.6V
0.1

0.1

0.01 Vcc=3.3V Vcc=5V

Vcc=5V

1E-3 0.01 0.1 1 1E-3 0.01 0.1 1

Output Power (W) Output Power (W)

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 Electrical characteristics TS4990

Figure 50. THD + N vs. output power Figure 51. THD + N vs. frequency

10
RL=8Ω
RL = 16Ω Av=2
F = 20kHz Cb = 1μF
Av = 2 Bw < 125kHz
Cb = 1μF Vcc=2.2V Tamb = 25°C Vcc=5V, Po=1W
1
THD + N (%)

BW < 125kHz

THD + N (%)
0.1
Tamb = 25°C Vcc=2.6V

0.1

Vcc=2.2V, Po=130mW

Vcc=3.3V Vcc=5V
0.01 0.01
1E-3 0.01 0.1 1 20 100 1000 10000 20k
Output Power (W) Frequency (Hz)

Figure 52. SNR vs. power supply with Figure 53. THD + N vs. frequency
unweighted filter (20Hz to 20kHz)

110 1
RL=16Ω RL=4Ω
105 Av=2
Signal to Noise Ratio (dB)

Cb = 1μF
Bw < 125kHz
100 Tamb = 25°C
THD + N (%)

Vcc=5V, Po=1.3W

95 RL=8Ω
RL=4Ω Vcc=2.2V, Po=150mW

90
Av = 2
85 Cb = 1μF
THD+N < 0.7%
Tamb = 25°C 0.1
80
2.5 3.0 3.5 4.0 4.5 5.0 20 100 1000 10000 20k
Power Supply Voltage (V) Frequency (Hz)

Figure 54. THD + N vs. frequency Figure 55. SNR vs. power supply with
unweighted filter (20Hz to 20kHz)

95
RL=16Ω RL=16Ω
Av=2
Cb = 1μF 90
Signal to Noise Ratio (dB)

Bw < 125kHz
Tamb = 25°C
THD + N (%)

0.1 85
Vcc=5V, Po=0.55W RL=8Ω

80 RL=4Ω
Vcc=2.2V, Po=100mW

Av = 10
75 Cb = 1μF
THD+N < 0.7%
Tamb = 25°C
0.01 70
20 100 1000 10000 20k 2.5 3.0 3.5 4.0 4.5 5.0
Frequency (Hz) Power Supply Voltage (V)

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 TS4990 Electrical characteristics

Figure 56. Signal to noise ratio vs. power Figure 57. Output noise voltage
supply with a weighted filter device ON

110 45
RL=16Ω Vcc=2.2V to 5.5V
40 Cb=1μF

Output Noise Voltage ( Vrms)

105
RL=8Ω
Signal to Noise Ratio (dB)

Tamb=25°C
35
100
RL=8Ω
30 Unweighted Filter
95 RL=4Ω
25
90
Av = 2 20

85 Cb = 1μF
A Weighted Filter
THD+N < 0.7% 15
Tamb = 25°C
80 10
2.5 3.0 3.5 4.0 4.5 5.0 2 4 6 8 10
Power Supply Voltage (V) Closed Loop Gain

Figure 58. Signal to noise ratio vs. power Figure 59. Output noise voltage device in
supply with a weighted filter Standby

100 2.0
RL=16Ω 1.8
Output Noise Voltage ( Vrms)

95
Signal to Noise Ratio (dB)

1.6
1.4 Unweighted Filter
90
RL=8Ω 1.2
85 RL=4Ω 1.0
0.8 A Weighted Filter
80
0.6
Av = 10 Vcc=2.2V to 5.5V
75 Cb = 1μF 0.4 Cb=1μF
THD+N < 0.7%
0.2 RL=8Ω
Tamb = 25°C Tamb=25°C
70 0.0
2.5 3.0 3.5 4.0 4.5 5.0 2 4 6 8 10
Power Supply Voltage (V) Closed Loop Gain

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 Application information TS4990

4 Application information

4.1 BTL configuration principle

The TS4990 is a monolithic power amplifier with a BTL output type. BTL (bridge tied load)
means that each end of the load is connected to two single-ended output amplifiers. Thus,
we have:
Single-ended output 1 = Vout1 = Vout (V)
Single-ended output 2 = Vout2 = -Vout (V)
and Vout1 - Vout2 = 2Vout (V)
The output power is:
2
( 2V out )
RMS
P out = ------------------------------
RL

For the same power supply voltage, the output power in BTL configuration is four times
higher than the output power in single-ended configuration.

4.2 Gain in a typical application

The typical application schematics are shown in Figure 1 on page 4.
In the flat region (no Cin effect), the output voltage of the first stage is (in Volts):
R feed
V out1 = ( – V in ) --------------
R in

For the second stage: Vout2 = -Vout1 (V)

The differential output voltage is (in Volts):
R feed
V out2 – V out1 = 2V in --------------
R in

The differential gain named gain (Gv) for more convenience is:
V out2 – V out1 R feed
G v = ---------------------------------- = 2 --------------
V in R in

Vout2 is in phase with Vin and Vout1 is phased 180° with Vin. This means that the positive
terminal of the loudspeaker should be connected to Vout2 and the negative to Vout1.

4.3 Low and high frequency response

In the low frequency region, Cin starts to have an effect. Cin forms with Rin a high-pass filter
with a -3 dB cut-off frequency. FCL is in Hz.
1
F CL = ------------------------
2πR in C in

In the high frequency region, you can limit the bandwidth by adding a capacitor (Cfeed) in
parallel with Rfeed. It forms a low-pass filter with a -3 dB cut-off frequency. FCH is in Hz.
1
F CH = -------------------------------------
2πR feed C feed

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 TS4990 Application information

The graph in Figure 60 shows an example of Cin and Cfeed influence.

Figure 60. Frequency response gain vs. Cin and Cfeed

10

0 Cfeed = 330pF

Gain (dB)
-5 Cfeed = 680pF

-10 Cin = 470nF Cfeed = 2.2nF

-15 Cin = 22nF

-20 Cin = 82nF Rin = Rfeed = 22kΩ

Tamb = 25°C
-25
10 100 1000 10000
Frequency (Hz)

4.4 Power dissipation and efficiency

Hypotheses:
● Load voltage and current are sinusoidal (Vout and Iout).
● Supply voltage is a pure DC source (VCC).
The load can be expressed as:
V out = V PEAK sin ω t (V)

and
V out
I out = ------------
- (A)
RL

and
2
V PEAK
P out = ------------------------
- (W)
2R L

Therefore, the average current delivered by the supply voltage is:

V PEAK
I CC = 2 ---------------------
- (A)
AVG πR L

The power delivered by the supply voltage is:

P supply = V CC ⋅ I CC (W)
AVG

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 Application information TS4990

Therefore, the power dissipated by each amplifier is:

Pdiss = Psupply - Pout (W)

2 2V CC
P diss = ---------------------- P out – P out
π RL

and the maximum value is obtained when:

δP diss
------------------ = 0
δP out

and its value is:

2
2V CC
P diss = --------------
2
- (W)
π RL
max

Note: This maximum value is only dependent on power supply voltage and load values.
The efficiency is the ratio between the output power and the power supply:
P out πV PEAK
η = ------------------- = -----------------------
P supply 4V CC

The maximum theoretical value is reached when VPEAK = VCC, so:

π
----- = 78.5%
4

4.5 Decoupling of the circuit

Two capacitors are needed to correctly bypass the TS4990: a power supply bypass
capacitor Cs and a bias voltage bypass capacitor Cb.
Cs has particular influence on the THD+N in the high frequency region (above 7 kHz) and
an indirect influence on power supply disturbances. With a value for Cs of 1 µF, you can
expect THD+N levels similar to those shown in the datasheet.
In the high frequency region, if Cs is lower than 1 µF, it increases THD+N and disturbances
on the power supply rail are less filtered.
On the other hand, if Cs is higher than 1 µF, those disturbances on the power supply rail are
more filtered.
Cb has an influence on THD+N at lower frequencies, but its function is critical to the final
result of PSRR (with input grounded and in the lower frequency region).
If Cb is lower than 1 µF, THD+N increases at lower frequencies and PSRR worsens.
If Cb is higher than 1 µF, the benefit on THD+N at lower frequencies is small, but the benefit
to PSRR is substantial.
Note that Cin has a non-negligible effect on PSRR at lower frequencies. The lower the value
of Cin, the higher the PSRR.

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 TS4990 Application information

4.6 Wake-up time (tWU)

When the standby is released to put the device ON, the bypass capacitor Cb is not charged
immediately. Because Cb is directly linked to the bias of the amplifier, the bias will not work
properly until the Cb voltage is correct. The time to reach this voltage is called wake-up time
or tWU and specified in the electrical characteristics tables with Cb = 1 µF.
If Cb has a value other than 1 µF, refer to the graph in Figure 61 to establish the wake-up
time.

Figure 61. Typical wake-up time vs. Cb

600
Tamb=25°C

500 Vcc=3.3V
Startup Time (ms)

400 Vcc=2.6V

300

200
Vcc=5V
100

0
0.1 1 2 3 4 4.7
Bypass Capacitor Cb ( F)

Due to process tolerances, the maximum value of wake-up time is shown in Figure 62.

Figure 62. Maximum wake-up time vs. Cb

Tamb=25°C
600
Vcc=3.3V
500
Max. Startup Time (ms)

Vcc=2.6V
400

300

200
Vcc=5V
100

0
0.1 1 2 3 4 4.7
Bypass Capacitor Cb ( F)

Note: The bypass capacitor Cb also has a typical tolerance of +/-20%. To calculate the wake-up
time with this tolerance, refer to the graph above (considering for example for Cb=1 µF in the
range of 0.8 µF≤ Cb≤ 1.2 µF).

4.7 Standby time

When the standby command is set, the time required to put the two output stages in high
impedance and the internal circuitry in standby mode is a few microseconds. In standby

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 Application information TS4990

mode, the bypass pin and Vin pin are short-circuited to ground by internal switches. This
allows a quick discharge of Cb and Cin capacitors.

4.8 Pop performance

Pop performance is intimately linked with the size of the input capacitor Cin and the bias
voltage bypass capacitor Cb.
The size of Cin is dependent on the lower cut-off frequency and PSRR values requested.
The size of Cb is dependent on THD+N and PSRR values requested at lower frequencies.
Moreover, Cb determines the speed with which the amplifier turns ON. In order to reach
near zero pop and click, the equivalent input constant time,
τin = (Rin + 2kΩ) x Cin (s) with Rin ≥ 5kΩ
must not reach the τin maximum value as indicated in Figure 63 below.

Figure 63. τin max. versus bypass capacitor

160 Tamb=25°C

Vcc=3.3V

120 Vcc=2.6V
in max. (ms)

80

40 Vcc=5V

0
1 2 3 4
Bypass Capacitor Cb ( F)

By following the previous rules, the TS4990 can reach near zero pop and click even with
high gains such as 20 dB.

Example:
With Rin = 22 kΩ and a 20 Hz, -3 dB low cut-off frequency, Cin = 361 nF. So, Cin = 390 nF
with standard value which gives a lower cut-off frequency equal to 18.5 Hz. In this case,
(Rin + 2kΩ) x Cin = 9.36ms. By referring to the previous graph, if Cb = 1 µF and VCC = 5 V,
we read 20 ms max. This value is twice as high as our current value, thus we can state that
pop and click will be reduced to its lowest value.
Minimizing both Cin and the gain benefits both the pop phenomenon, and the cost and size
of the application.

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 TS4990 Application information

4.9 Application example: differential input, BTL power amplifier

The schematics in Figure 64 show how to configure the TS4990 to work in differential input
mode. The gain of the amplifier is:
R2
G VDIFF = 2 -------
R1

In order to reach the best performance of the differential function, R1 and R2 should be
matched at 1% max.

Figure 64. Differential input amplifier configuration

R2

Vcc

+
Cs

VCC
Cin R1
Vin- -
Neg. Input
Vout 1

Vin+
Speaker
Cin +
R1 8 Ohms
Pos. Input

R2 -
Vout 2
AV = -1
Bypass +

Standby Standby
Bias
Control
GND

TS4990
Cb
+

The input capacitor Cin can be calculated by the following formula using the -3 dB lower
frequency required. (FL is the lower frequency required).
1
C in ≈ --------------------- (F)
2πR 1 F L

Note: This formula is true only if:

1
F CB = ---------------------------------------- (Hz)
2π ( R 1 + R 2 )C B

is 5 times lower than FL.

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 Application information TS4990

Example bill of materials

The bill of materials in Table 7 is for the example of a differential amplifier with a gain of 2
and a -3 dB lower cut-off frequency of about 80 Hz.

Table 7. Bill of materials for differential input amplifier application

Pin name Functional description

R1 20k / 1%
R2 20k / 1%
Cin 100 nF
Cb=Cs 1 µF
U1 TS4990

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 TS4990 Package information

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

5.1 Flip-chip package information

Figure 65. Flip-chip pinout (top view)

Vin+
3 VCC STBY

2 VOUT1 GND VOUT2

1 Vin- GND BYPASS

A B C
■ Balls are underneath

Figure 66. Marking (top view)

■ ST logo
E
■ Product and assembly code: XXX
Symbol for A90 from Tours
lead-free package 90S from Shenzhen
XXX ■ Three-digit datecode: YWW
YWW ■ E symbol for lead-free only
■ The dot indicates pin A1

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 Package information TS4990

Figure 67. Package mechanical data for 9-bump flip-chip package

1.60 mm ■ Die size: 1.60 x 1.60 mm ±30µm

■ Die height (including bumps): 600µm
■ Bump diameter: 315µm ±50µm
■ Bump diameter before reflow: 300µm ±10µm
1.60 mm
0.5mm ■ Bump height: 250µm ±40µm
■ Die height: 350µm ±20µm
■ Pitch: 500µm ±50µm
0.5mm
∅ 0.25mm ■ Coplanarity: 50µm max
■ * Back coating height: 100µm ±10µm
100µm
* Optional
600µm

Figure 68. Daisy chain mechanical data

1.6mm

2 1.6mm

A B C

The daisy chain sample features two-by-two pin connections. The schematics in Figure 68
illustrate the way pins connect to each other. This sample is used to test continuity on your
board. Your PCB needs to be designed the opposite way, so that pins that are unconnected
in the daisy chain sample, are connected on your PCB. If you do this, by simply connecting
an Ohmmeter between pin A1 and pin A3, the soldering process continuity can be tested.

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 TS4990 Package information

Figure 69. TS4990 footprint recommendations

75µm min.
500μm 500μm 100μm max.
Φ=250μm
Track

Φ=400μm typ. 150μm min.

500μm

Φ=340μm min.
500μm

Non Solder mask opening

Pad in Cu 18μm with Flash NiAu (2-6μm, 0.2μm max.)

Figure 70. Tape and reel specification (top view)

4 1.5

1 1

A A
Die size Y + 70µm

Die size X + 70µm

4

All dimensions are in mm

User direction of feed

Device orientation
The devices are oriented in the carrier pocket with pin number A1 adjacent to the sprocket
holes.

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 Package information TS4990

5.2 MiniSO-8 package information

Figure 71. MiniSO-8 package mechanical drawing

Table 8. MiniSO-8 package mechanical data

Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.1 0.043
A1 0 0.15 0 0.006
A2 0.75 0.85 0.95 0.030 0.033 0.037
b 0.22 0.40 0.009 0.016
c 0.08 0.23 0.003 0.009
D 2.80 3.00 3.20 0.11 0.118 0.126
E 4.65 4.90 5.15 0.183 0.193 0.203
E1 2.80 3.00 3.10 0.11 0.118 0.122
e 0.65 0.026
L 0.40 0.60 0.80 0.016 0.024 0.031
L1 0.95 0.037
L2 0.25 0.010
k 0° 8° 0° 8°
ccc 0.10 0.004

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 TS4990 Package information

5.3 DFN8 package information

Note: DFN8 exposed pad (E2 x D2) is connected to pin number 7. For enhanced thermal
performance, the exposed pad must be soldered to a copper area on the PCB, acting as a
heatsink. This copper area can be electrically connected to pin7 or left floating.

Figure 72. DFN8 3x3x0.90mm package mechanical drawing (pitch 0.5mm)

SEATING

C
PLANE

ddd
C

A2

A
A1
A3

D
0.15x45°
e

1 2 3 4
E2

E
L

8 7 6 5
b

D2

BOTTOM VIEW
7426334_F

Table 9. DFN8 3x3x0.90mm package mechanical data (pitch 0.5mm)

Dimensions

Ref. Millimeters Mils

Min. Typ. Max. Min. Typ. Max.

A 0.80 0.90 1.00 31.5 35.4 39.4

A1 0.02 0.05 0.8 2.0
A2 0.55 0.65 0.80 217 25.6 31.5
A3 0.20 7.9
b 0.18 0.25 0.30 7.1 9.8 11.8
D 2.85 3.00 3.15 112.2 118.1 124
D2 2.20 2.70 86.6 106.3
E 2.85 3.00 3.15 112.2 118.1 124
E2 1.40 1.75 55.1 68.9
e 0.50 19.7
L 0.30 0.40 0.50 11.8 15.7 19.7
ddd 0.08 3.1

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 Package information TS4990

5.4 SO-8 package information

Figure 73. SO-8 package mechanical drawing

Table 10. SO-8 package mechanical data

Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.28 0.48 0.011 0.019
c 0.17 0.23 0.007 0.010
D 4.80 4.90 5.00 0.189 0.193 0.197
H 5.80 6.00 6.20 0.228 0.236 0.244
E1 3.80 3.90 4.00 0.150 0.154 0.157
e 1.27 0.050
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
k 1° 8° 1° 8°
ccc 0.10 0.004

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 TS4990 Ordering information

6 Ordering information

Table 11. Order codes

Temperature
Order code Package Packing Marking
range

TS4990IJT
Flip-chip, 9 bumps Tape & reel 90
TS4990EIJT(1)
TSDC05IJT
Flip-chip, 9 bumps Tape & reel DC3
TSDC05EIJT(2)
TS4990IST -40°C, +85°C MiniSO-8 Tape & reel K990
TS4990IQT DFN8 Tape & reel K990
TS4990EKIJT FC + back coating Tape & reel 90
TS4990ID Tube or
SO-8 TS4990I
TS4990IDT Tape & reel

1. Lead-free Flip-chip part number

2. Lead-free daisy chain part number

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 Revision history TS4990

7 Revision history

Table 12. Document revision history

Date Revision Changes

1-Jul-2002 1 First release.

4-Sep-2003 2 Update mechanical data.
1-Oct-2004 3 Order code for back coating on flip-chip.
2-Apr-2005 4 Typography error on page 1: Mini-SO-8 pin connection.
May-2005 5 New marking for assembly code plant.
1-Jul-2005 6 Error on Table 4 on page 5. Parameters in wrong column.
Updated mechanical coplanarity data to 50µm (instead of 60µm) (see
28-Sep-2005 7
Figure 67 on page 25).
14-Mar-2006 8 SO-8 package inserted in the datasheet.
21-Jul-2006 9 Update of Figure 66 on page 25. Disclaimer update.
Corrected value of PSRR in Table 5 on page 6 from 1 to 61 (typical
value).
Moved Table 3: Component descriptions to Section 2: Typical application
11-May-2007 10
schematics on page 4.
Merged daisy chain flip-chip order code table into Table 11: Order codes
on page 31.
Corrected pitch error in DFN8 package information. Actual pitch is
0.5mm. Updated DFN8 package dimensions to correspond to JEDEC
databook definition (in previous versions of datasheet, package
17-Jan-2008 11 dimensions were as in manufacturer’s drawing).
Corrected error in MiniSO-8 package information (L and L1 values were
inverted).
Reformatted package information.
Corrected value of output resistance vs. ground in standby mode:
21-May-2008 12
removed from Table 2, and added in Table 4, Table 5, and Table 6.
Updated DFN8 package (Figure 72)
30-Aug-2011 13
Updated ECOPACK® text in Section 5: Package information

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 TS4990

Please Read Carefully:

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