MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR6CM OUTLINE DRAWING Dimensions

in mm
10.5 MAX 4.5
1.3

3.2±0.2
4

16 MAX

7.0
∗
TYPE
NAME φ3.6±0.2
VOLTAGE
CLASS
1.0

3.8 MAX
12.5 MIN
0.8

2.5 2.5 0.5 2.6

4.5
123 ∗ Measurement point of
case temperature
24
1 CATHODE
2 ANODE
3 3 GATE
• IT (AV) ........................................................................... 6A 4 ANODE
1
• VDRM ..............................................................400V/600V TO-220
• IGT ..........................................................................10mA

APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
VRRM Repetitive peak reverse voltage 400 600 V
VRSM Non-repetitive peak reverse voltage 500 720 V
VR (DC) DC reverse voltage 320 480 V
VDRM Repetitive peak off-state voltage 400 600 V
VD (DC) DC off-state voltage 320 480 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current 9.4 A
IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =88°C 6 A
ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive 90 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 34 A2s
current
PGM Peak gate power dissipation 5 W
PG (AV) Average gate power dissipation 0.5 W
VFGM Peak gate forward voltage 6 V
VRGM Peak gate reverse voltage 10 V
IFGM Peak gate forward current 2 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 2.0 g

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 2.0 mA
IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA
VTM On-state voltage Tc=25°C, ITM =20A, instantaneous value — — 1.7 V
VGT Gate trigger voltage Tj=25°C, VD=6V, IT=1A — — 1.0 V
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
IGT Gate trigger current Tj=25°C, VD=6V, IT=1A — — 10 mA
IH Holding current Tj=25°C, VD=12V — 15 — mA
R th (j-c) Thermal resistance Junction to case ✽1 — — 3.0 °C/W
✽1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased.

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

103 200
7 Tc = 125°C
SURGE ON-STATE CURRENT (A)

5 180
ON-STATE CURRENT (A)

3 160
2
140
102
7 120
5
3 100
2
80
101
7 60
5
40
3
2 20
100 0
0 1 2 3 4 5 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
102 103
7 7 TYPICAL EXAMPLE
5 5
3 3
2 2
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

VFGM = 6V PGM = 5W

GATE TRIGGER CURRENT (Tj = t°C)

101 102
7 7
5 5
PG(AV)
3 3
2 VGT = 1V = 0.5W 2
100 101
7 IGT = 10mA 7
5 5
3 3
2 2
VGD = 0.2V IFGM = 2A
10–1 100
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 –40 –20 0 20 40 60 80 100 120 140 160

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

GATE TRIGGER VOLTAGE VS. IMPEDANCE CHARACTERISTICS

,,,,,,,,,,,,,
JUNCTION TEMPERATURE (JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)

1.0 102

,,,,,,,,,,,,,
7
DISTRIBUTION 5

,,,,,,,,,,,,,
0.9
GATE TRIGGER VOLTAGE (V)

,,,,,,,,,,,,,
0.8 TYPICAL 2

,,,,,,,,,,,,,
EXAMPLE 101
0.7 7

,,,,,,,,,,,,,
5
0.6 3

,,,,,,,,,,,,,
2

,,,,,,,,,,,,,
0.5 100
7

,,,,,,,,,,,,,
0.4 5
3

,,,,,,,,,,,,,
0.3 2
10–1
0.2 7
5
0.1 3
2
0 10–2
–40 –20 0 20 40 60 80 100 120 10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101

JUNCTION TEMPERATURE (°C) TIME (s)

ALLOWABLE CASE TEMPERATURE VS.

MAXIMUM AVERAGE POWER DISSIPATION AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE) (SINGLE-PHASE HALF WAVE)
16 160
AVERAGE POWER DISSIPATION (W)

θ = 30° 180°
14 140
120° θ
CASE TEMPERATURE (°C)

90°
12 60° 120 360°
RESISTIVE,
10 100 INDUCTIVE
LOADS
8 80

6 θ 60

4 360° 40
RESISTIVE,
2 20 θ = 30° 60° 90° 120° 180°
INDUCTIVE
LOADS
0 0
0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE VS.

MAXIMUM AVERAGE POWER DISSIPATION AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE) (SINGLE-PHASE FULL WAVE)
16 160
AVERAGE POWER DISSIPATION (W)

θ = 30°
14 140
θ θ

CASE TEMPERATURE (°C)

180°
12 120° 120 360°
90°
60° RESISTIVE LOADS
10 100

8 80

6 60
θ = 30° 90° 180°
4 40
θ θ 60° 120°
2 360° 20
RESISTIVE LOADS
0 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE VS.

MAXIMUM AVERAGE POWER DISSIPATION AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE) (RECTANGULAR WAVE)
16 160
AVERAGE POWER DISSIPATION (W)

θ = 30° DC
14 140
60° 270° θ
CASE TEMPERATURE (°C)

180°
12 120° 120 360°
90° RESISTIVE,
10 100 INDUCTIVE
LOADS
8 80

6 θ 60
θ = 30° 90° 180° DC
4 360° 40
RESISTIVE, 60° 120° 270°
2 INDUCTIVE 20
LOADS
0 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

BREAKOVER VOLTAGE VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE RATE OF RISE OF OFF-STATE VOLTAGE
100 (%)

160 160
100 (%)

TYPICAL EXAMPLE Tj = 125°C

140 140 TYPICAL
EXAMPLE
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = vV/µs )

120 120 IGT (25°C)

BREAKOVER VOLTAGE (T j = 25°C)
BREAKOVER VOLTAGE (T j = t°C)

# 1 4.7mA
100 100 # 2 7.2mA
80 80 #2

60 60

40 40 #1
20 20

0 0
–40 –20 0 20 40 60 80 100 120 140 160 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104

JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

HOLDING CURRENT VS. HOLDING CURRENT VS.

JUNCTION TEMPERATURE GATE TRIGGER CURRENT
103 50
7
5 45
HOLDING CURRENT (mA)

HOLDING CURRENT (mA)

3 40
2
DISTRIBUTION 35
102

,,,,,,,,,,,
7 TYPICAL EXAMPLE 30
5
3
2 ,,,,,,,,,,,
,,,,,,,,,,,
25
20
101
,,,,,,,,,,, ,,,,,,,,,,
,,,,,,,,,,

,,,,,,,,,,,
7 15 ,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,

,,,,,,,,,,,
5 ,,,,,,,,,,
10 ,,,,,,,,,,
,,,,,,,,,,
3
2 5
100 0
–40 –20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20

JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (mA)

TURN-OFF TIME VS.

,,,,,,,,,
TURN-ON TIME VS. GATE CURRENT JUNCTION TEMPERATURE
5.0 80
VD = 100V
,,,,,,,,,
,,,,,,,,,
4.5 RL = 16Ω TYPICAL
70
EXAMPLE

,,,,,,,,,
4.0 Ta = 25°C
TURN-OFF TIME (µs)

,,,,,,,,,
TYPICAL 60
TURN-ON TIME (µs)

3.5 EXAMPLE
3.0 IGT (25°C) 50
,,,,,,,,,
2.5
# 5.2mA
40 ,,,,,,,,,
,,,,,,,,,
2.0
# 30
,,,,,,,,,
1.5
1.0
20 ,,,,,,,,, DISTRIBUTION
IT = 6A, –di/dt = 5A/µs,
0.5 10 VD = 300V, dv/dt = 20V/µs
VR = 50V
0 0
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

REPETITIVE PEAK REVERSE VOLTAGE VS. GATE TRIGGER CURRENT VS.

100 (%)

JUNCTION TEMPERATURE GATE CURRENT PULSE WIDTH

160 104
tw
100 (%)

TYPICAL EXAMPLE 7 TYPICAL EXAMPLE

140 5
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)

3
120 2 0.1s
GATE TRIGGER CURRENT (DC)
GATE TRIGGER CURRENT (tw)

103
100 7
5
80 3
2
60
102
7
40 5
3
20 2
0 101
–40 –20 0 20 40 60 80 100 120 140 160 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) GATE CURRENT PULSE WIDTH (µs)

Feb.1999
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