MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR8PM-14 OUTLINE DRAWING Dimensions

in mm

10.5 MAX
5.2 2.8

1.2
5.0

8.5
17
TYPE
NAME φ3.2 ± 0.2 ✽

VOLTAGE
CLASS 1.3 MAX

3.6
13.5 MIN
0.8

2.54 2.54 0.5 2.6

✽ Measurement point of
¡IT (RMS) ........................................................................ 8A

4.5
➀➁➂ case temperature
¡VDRM ....................................................................... 700V ➁
¡IFGT !, IRGT !, IRGT # ........................................... 20mA ➀ T1 TERMINAL
➁ T2 TERMINAL
¡Viso ........................................................................ 2000V ➂ ➂ GATE TERMINAL
➀
¡UL Recognized: Yellow Card No. E80276(N)
File No. E80271 TO-220F

APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
14
VDRM Repetitive peak off-state voltage ✽1 700 V
VDSM Non-repetitive peak off-state voltage ✽1 840 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=88°C 8 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 80 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 26 A2s
current

PGM Peak gate power dissipation 5 W

PG (AV) Average gate power dissipation 0.5 W
VGM Peak gate voltage 10 V
IGM Peak gate current 2 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 2.0 g
Viso Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 2000 V
✽1. Gate open.

Mar. 2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA
VTM On-state voltage Tc=25°C, ITM=12A, Instantaneous measurement — — 1.6 V
VFGT ! ! — — 1.5 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 1.5 V
VRGT # # — — 1.5 V
IFGT ! ! — — 20 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 20 mA
IRGT # # — — 20 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
Rth (j-c) Thermal resistance Junction to case ✽3 — — 3.7 °C/ W

Critical-rate of rise of off-state ✽4

(dv/dt)c Tj=125°C 10 — — V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Commutating voltage and current waveforms

Test conditions (inductive load)

SUPPLY
1. Junction temperature VOLTAGE TIME
Tj=125°C

2. Rate of decay of on-state commutating current MAIN CURRENT (di/dt)c

(di/dt)c=–4.0A/ms TIME
MAIN
3. Peak off-state voltage
VOLTAGE TIME
VD=400V
(dv/dt)c VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

102 100
7
SURGE ON-STATE CURRENT (A)

5 90
ON-STATE CURRENT (A)

3 80
2
Tj = 125°C 70
101
7 60
5
3 50
2 Tj = 25°C 40
100
7 30
5
20
3
2 10
10–1 0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Mar. 2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
103
3 TYPICAL EXAMPLE
2 VGM = 10V PG(AV) = 0.5W 7
5
101 PGM = 5W 4
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

3

GATE TRIGGER CURRENT (Tj = t°C)

5 IGM = 2A IRGT III
3 2
VGT = 1.5V
2
102
100 IRGT I , IFGT I
7 7
5 5
3 4
2 3
IFGT I IRGT I, IRGT III VGD = 0.2V 2
10–1
7
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE)
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 4.0
7 TYPICAL EXAMPLE
5 3.5
4
3.0
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

2 2.5

102 2.0
7
5 1.5
4
3 1.0
2 0.5

101 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS MAXIMUM ON-STATE POWER
(JUNCTION TO AMBIENT) DISSIPATION
TRANSIENT THERMAL IMPEDANCE (°C/W)

103 16
ON-STATE POWER DISSIPATION (W)

7 NO FINS
5
3 14
2
102 12 360°
7 CONDUCTION
5
3 10 RESISTIVE,
2 INDUCTIVE
101 8 LOADS
7
5
3 6
2
100 4
7
5
3 2
2
10–1 0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 0 2 4 6 8 10 12 14 16

CONDUCTION TIME RMS ON-STATE CURRENT (A)

(CYCLES AT 60Hz)

Mar. 2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT VS. RMS ON-STATE CURRENT
160 160
CURVES APPLY REGARDLESS ALL FINS ARE BLACK PAINTED

AMBIENT TEMPERATURE (°C)

140 OF CONDUCTION ANGLE 140 ALUMINUM AND GREASED
CASE TEMPERATURE (°C)

120 120 120 120 t2.3

100 100 100 100 t2.3

60 60 t2.3
80 80

60 60 NATURAL
360° CONVECTION
40 CONDUCTION 40 CURVES APPLY
RESISTIVE, RESISTIVE, REGARDLESS
20 INDUCTIVE 20 INDUCTIVE OF CONDUCTION
LOADS LOADS ANGLE
0 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

100 (%)

ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION

VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
NATURAL CONVECTION 7 TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5
AMBIENT TEMPERATURE (°C)

NO FINS
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

140
CURVES APPLY REGARDLESS 3
120 OF CONDUCTION ANGLE 2
RESISTIVE, INDUCTIVE LOADS 104
100 7
5
80 3
2
60
103
7
40 5
3
20 2
0 102
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 –60 –40 –20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. LACHING CURRENT VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 103
100 (%)

7 TYPICAL EXAMPLE 7
5
5
LACHING CURRENT (mA)

4 3 DISTRIBUTION
2 T2+, G–
3
HOLDING CURRENT (Tj = 25°C)

102 TYPICAL
HOLDING CURRENT (Tj = t°C)

2 EXAMPLE
7
5
102 3
7 2
5 101
4 7
3 5
2 3 T2+, G+  TYPICAL
2 
T2– , G–  EXAMPLE
101 100
–60 –40 –20 0 20 40 60 80 100 120 140 –40 0 40 80 120 160

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

Mar. 2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

BREAKOVER VOLTAGE VS. RATE OF RISE OF
JUNCTION TEMPERATURE OFF-STATE VOLTAGE

100 (%)
160 160
100 (%)

TYPICAL EXAMPLE TYPICAL EXAMPLE

140 140 Tj = 125°C

BREAKOVER VOLTAGE (dv/dt = 1V/µs )

BREAKOVER VOLTAGE (dv/dt = xV/µs )
120 120
BREAKOVER VOLTAGE (Tj = 25°C)
BREAKOVER VOLTAGE (Tj = t°C)

100 100

80 80

60 60
III QUADRANT
40 40

20 20 I QUADRANT

0 0
–60 –40 –20 0 20 40 60 80 100120 140 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104

JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

GATE TRIGGER CURRENT VS.

COMMUTATION CHARACTERISTICS GATE CURRENT PULSE WIDTH
CRITICAL RATE OF RISE OF OFF-STATE

103
100 (%)

3 TYPICAL VOLTAGE WAVEFORM TYPICAL EXAMPLE

COMMUTATING VOLTAGE (V/µs)

2 EXAMPLE t 7
(dv/dt)C VD 5 IFGT I
102 Tj = 125°C 4
7 IT = 4A CURRENT WAVEFORM 3 IRGT I
5 τ = 500µs
GATE TRIGGER CURRENT (DC)
GATE TRIGGER CURRENT (tw)

IT (di/dt)C IRGT III

3 VD = 200V 2
2 f = 3Hz τ t
102
101
7 I QUADRANT 7
5 5
3 MINIMUM 4
2 CHARAC- 3
100 TERISTICS III QUADRANT 2
7 VALUE
5
101 0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 2 3 4 5 7 101 2 3 4 5 7 102

RATE OF DECAY OF ON-STATE GATE CURRENT PULSE WIDTH (µs)

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6Ω 6Ω

6V A 6V A
V RG V RG

TEST PROCEDURE 1 TEST PROCEDURE 2

6Ω

A
6V
V RG

TEST PROCEDURE 3

Mar. 2002
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