BUK7K6R8-40E

Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

6 November 2013 Product data sheet

1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.

2. Features and benefits

• Dual MOSFET
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) of greater than 1 V at 175 °C

3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 40 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 64 W

Static characteristics FET1 and FET2

RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; - 5.8 6.8 mΩ
resistance Fig. 12
Dynamic characteristics FET1 and FET2
QGD gate-drain charge ID = 20 A; VDS = 32 V; VGS = 20 V; - 9.1 - nC
Tj = 25 °C; Fig. 14; Fig. 15
Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S1 source1 8 7 6 5 D1 D1 D2 D2

2 G1 gate1
3 S2 source2
4 G2 gate2
5 D2 drain2 S1 G1 S2 G2

6 D2 drain2 mbk725
1 2 3 4
7 D1 drain1
LFPAK56D (SOT1205)
8 D1 drain1

6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK7K6R8-40E LFPAK56D Plastic single ended surface mounted package (LFPAK56D); 8 SOT1205
leads

7. Marking
Table 4. Marking codes
Type number Marking code
BUK7K6R8-40E 76E840

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V

VDGR drain-gate voltage RGS = 20 kΩ; Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V

VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - 40 A

Tmb = 100 °C; VGS = 10 V; Fig. 1 - 40 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 276 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 64 W

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Product data sheet 6 November 2013 2 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode FET1 and FET2

IS source current Tmb = 25 °C - 40 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 276 A

Avalanche Ruggedness FET1 and FET2

EDS(AL)S non-repetitive drain-source ID = 40 A; Vsup ≤ 40 V; VGS = 10 V; [1][2] - 130 mJ
avalanche energy Tj(init) = 25 °C; Fig. 3

[1] Refer to application note AN10273 for further information

[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

003aaj739 03aa16
100 120
ID
(A) Pder
80 (%)

80
60

40
(1)
40

20

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)

Fig. 1. Continuous drain current as a function of Fig. 2. Normalized total power dissipation as a
mounting base temperature function of mounting base temperature

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Product data sheet 6 November 2013 3 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

003aaj673
103
IAL
(A)
102
(1)

10
(2)

(3)
10-1

10-2
10-3 10-2 10-1 1 10
tAL (ms)

Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and
FET2

003aaj738
103
ID
(A)
Limit RDSon = V DS / ID
102 tp =10 µ s

100 µ s

10

DC 1 ms
1 10 ms
100 ms

10-1
10-1 1 10 102
VDS (V)

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance Fig. 5 - - 2.36 K/W
from junction to
mounting base

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Product data sheet 6 November 2013 4 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance Minimum footprint; mounted on a - 95 - K/W
from junction to printed circuit board
ambient

003aaj748
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1 0.02
tp
P δ=
T
10-2 single shot

tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics FET1 and FET2
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - V
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V

VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V

voltage Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.5 V
Fig. 10; Fig. 11
IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA

IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; - 5.8 6.8 mΩ

resistance Fig. 12
VGS = 10 V; ID = 20 A; Tj = 175 °C; - 11 13.4 mΩ
Fig. 12; Fig. 13

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Product data sheet 6 November 2013 5 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics FET1 and FET2
QG(tot) total gate charge ID = 20 A; VDS = 32 V; VGS = 10 V; - 28.9 - nC

QGS gate-source charge Tj = 25 °C; Fig. 14; Fig. 15 - 7 - nC

QGD gate-drain charge ID = 20 A; VDS = 32 V; VGS = 20 V; - 9.1 - nC

Tj = 25 °C; Fig. 14; Fig. 15

Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 1460 1947 pF

Coss output capacitance Tj = 25 °C; Fig. 16 - 324 389 pF

Crss reverse transfer - 197 270 pF

capacitance
td(on) turn-on delay time VDS = 32 V; RL = 1.6 Ω; VGS = 10 V; - 8.9 - ns

tr rise time RG(ext) = 5 Ω; Tj = 25 °C; ID = 20 A - 15.4 - ns

td(off) turn-off delay time - 19.4 - ns

tf fall time - 16.5 - ns

Source-drain diode FET1 and FET2

VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.78 1.2 V

trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 20.6 - ns

Qr recovered charge VDS = 20 V; Tj = 25 °C - 11.3 - nC

003aaj729 003aaj731
60 40
gfs
(S) RDSon
50 (mΩ )

30
40

30 20

20
10
10

0 0
0 10 20 30 40 0 4 8 12 16 20
ID (A) VGS (V)

Fig. 6. Forward transconductance as a function of Fig. 7. Drain-source on-state resistance as a function

drain current; typical values of gate-source voltage; typical values

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Product data sheet 6 November 2013 6 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

003aaj732 003aaj730
50 250
ID 6.5 5.5 ID
(A) (A)
7 6 5
40 200

VGS (V) = 4.5

30 150

20 100

4
Tj = 175 °C Tj = 25 ° C
10 50

3.5
0 0
0 1 2 3 4 0 2 4 6 8 10 12
VDS(V) VGS (V)

Fig. 8. Output characteristics: drain current as a Fig. 9. Transfer characteristics: drain current as a
function of drain-source voltage; typical values function of gate-source voltage; typical values

003aah028 003aah027
10-1 5
ID VGS(th)
(A) (V)
max
10-2 4

min typ max

10-3 3 typ

10-4 2 min

10-5 1

10-6 0
0 2 4 6 -60 0 60 120 180
VGS (V) T j (°C)

Fig. 10. Sub-threshold drain current as a function of Fig. 11. Gate-source threshold voltage as a function of
gate-source voltage junction temperature

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Product data sheet 6 November 2013 7 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

003aaj736 003aaj813
50 2
RDSon
a
(mΩ ) 4 4.5
40 1.6

30 1.2
V GS (V) = 5

20 0.8

5.5

10 6 6.5 0.4

7
10
0 0
0 10 20 30 40 50 -60 0 60 120 180
ID (A) Tj (°C)

Fig. 12. Drain-source on-state resistance as a function Fig. 13. Normalized drain-source on-state resistance
of drain current; typical values factor as a function of junction temperature

003aaj733
10
VDS
VGS
(V) 32 V
ID 8
VDS =14 V

VGS(pl)
6
VGS(th)

VGS 4
QGS1 QGS2

QGS QGD
2
QG(tot)

003aaa508
0
Fig. 14. Gate charge waveform definitions 0 10 20 30
QG (nC)

Fig. 15. Gate-source voltage as a function of gate

charge; typical values

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Product data sheet 6 November 2013 8 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

003aaj734 003aaj735
104 40

IS
C (A)
(pF)
Ciss 30
3
10

Coss 20
Crss
102 Tj = 175 °C Tj = 25 °C
10

10 0
10-1 1 10 102 0 0.3 0.6 0.9 1.2
VDS (V) VSD (V)

Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical voltage; typical values
values

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Product data sheet 6 November 2013 9 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

11. Package outline

Plastic single ended surface mounted package (LFPAK56D); 8 leads SOT1205

E A A

b1 c1

L1

mounting
D1
base
D D2
H

1 2 3 4
b X
e w A c E1
(8x)
E2

A1 C

Lp y C
detail X

0 2.5 5 mm

Dimensions scale

D2
Unit A A1 b b1 c c1 D(1) D1(1) E(1) E1(1) E2 e H L L1 Lp w y θ
(ref)
max 1.05 0.1 0.50 4.4 0.25 0.30 4.70 4.8 5.30 1.8 0.85 6.2 1.3 0.55 0.85 8°
mm nom 3.5 1.27 0.25 0.1
min 0.0 0.35 4.1 0.19 0.24 4.45 4.95 1.6 5.9 0.8 0.30 0.40 0°
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. sot1205_po

Outline References European

Issue date
version IEC JEDEC JEITA projection
13-02-19
SOT1205
13-02-21

Fig. 18. Package outline LFPAK56D (SOT1205)

BUK7K6R8-40E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 6 November 2013 10 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

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punitive, special or consequential damages (including - without limitation -
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sheet development. limitation specifications and product descriptions, at any time and without
Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior
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Product Production This document contains the product product has been qualified for use in automotive
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Product data sheet. given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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Product data sheet 6 November 2013 11 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

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Product data sheet 6 November 2013 12 / 13

Nexperia BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET

13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 5
11 Package outline ................................................... 10
12 Legal information .................................................11
12.1 Data sheet status ............................................... 11
12.2 Definitions ...........................................................11
12.3 Disclaimers .........................................................11
12.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reserved

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For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 06 November 2013

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Product data sheet 6 November 2013 13 / 13

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