To our customers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.
 Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
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especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
 Preliminary

HAT2038R, HAT2038RJ
Silicon N Channel Power MOS FET REJ03G1167-0600
High Speed Power Switching Rev.6.00
Aug 25, 2009

Features
• For Automotive Application (at Type Code “J”)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 <FP-8DAV> )
7 8 5 6
D D D D

65
87 2 4
1, 3 Source
G G
2, 4 Gate
5, 6, 7, 8 Drain
34
12

S1 S3

MOS1 MOS2

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 5 A
Note 1
Drain peak current ID (pulse) 40 A
Body-drain diode reverse drain current IDR 5 A
Avalanche current HAT2038R IAP Note 4 — —
HAT2038RJ 5 A
Avalanche energy HAT2038R EAR Note 4 — —
HAT2038RJ 2.14 mJ
Channel dissipation Pch Note 2 2 W
Note 3
Channel dissipation Pch 3 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 1 of 7
HAT2038R, HAT2038RJ Preliminary

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 μA, VDS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
Zero gate voltage drain HAT2038R IDSS — — 1 μA VDS = 60 V, VGS = 0
current HAT2038RJ IDSS — — 0.1 μA
Zero gate voltage drain HAT2038R IDSS — — — μA VDS = 48 V, VGS = 0
current HAT2038RJ IDSS — — 10 μA Ta = 125°C
Gate to source cutoff voltage VGS (off) 1.2 — 2.2 V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS (on) — 0.043 0.058 Ω ID = 3 A, VGS = 10 V Note 5
RDS (on) — 0.056 0.084 Ω ID = 3 A, VGS = 4 V Note 5
Forward transfer admittance |yfs| 6 9 — S ID = 3 A, VDS = 10 V Note 5
Input capacitance Ciss — 520 — pF VDS = 10 V
Output capacitance Coss — 270 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Turn-on delay time td (on) — 11 — ns VGS = 10 V, ID = 3 A,
Rise time tr — 40 — ns VDD ≅ 30 V
Turn-off delay time td (off) — 110 — ns
Fall time tf — 80 — ns
Body-drain diode forward voltage VDF — 0.84 1.1 V IF = 5 A, VGS = 0 Note 5
Body-drain diode reverse recovery time trr — 40 — ns IF = 5 A, VGS = 0
diF/dt = 50 A/μs
Note: 5. Pulse test

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 2 of 7
HAT2038R, HAT2038RJ Preliminary

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

4.0 100
Test Condition: 10 μs
Pch (W)

When using the glass epoxy board 30

(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 10
0μ

ID (A)
3.0 10 PW s
1m
DC = s
3 10
Channel Dissipation

Op ms
2
er

Drain Current
at (1
Dr
2.0 1 ion sh
ive
ot)
Operation in (P No
Op

1 0.3 W
Dr this area is ≤1 te
er

6
ive 0
at

Op limited by RDS (on) s)

ion

1.0 0.1
er
at
ion
0.03 Ta = 25°C
1 shot Pulse
0 0.01
0 50 100 150 200 0.1 0.3 1 3 10 30 100

Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V)

Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics Typical Transfer Characteristics
10 10
10 V Pulse Test VDS = 10 V
4V 3V Pulse Test
(A)
(A)

8 8
3.5 V
ID
ID

6 6
Drain Current
Drain Current

25°C
4 4
2.5 V Tc = 75°C
–25°C
2 2

VGS = 2 V
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
VDS (on) (V)

0.5 1.0
RDS (on) (Ω)
Drain to Source on State Resistance

Pulse Test Pulse Test

0.5
0.4

0.2
Drain to Source Voltage

0.3

ID = 5 A 0.1
VGS = 4 V
0.2
0.05
10 V
0.1 2A
0.02
1A
0 0.01
0 4 8 12 16 20 0.1 0.3 1 3 10 30 100

Gate to Source Voltage VGS (V) Drain Current ID (A)

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 3 of 7
HAT2038R, HAT2038RJ Preliminary

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current

RDS (on) (Ω)

Static Drain to Source on State Resistance

Forward Transfer Admittance |yfs| (S)

0.20 50
Pulse Test VDS = 10 V
Pulse Test
0.16 20
Tc = –25°C
1, 2 A 10
0.12
ID = 5 A 5 25°C
0.08 VGS = 4 V
2 75°C
0.04 1, 2, 5 A
1
10 V
0 0.5
–40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10

Case Temperature Tc (°C) Drain Current ID (A)

Body-Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
500 2000
Reverse Recovery Time trr (ns)

1000
200 Ciss
Capacitance C (pF)

500
100
200 Coss
50
100
Crss
20 50

10 di / dt = 50 A / μs 20 VGS = 0
VGS = 0, Ta = 25°C f = 1 MHz
5 10
0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

100 20 1000
VDS (V)

VGS (V)

ID = 5 A
VGS 300
16
Switching Time t (ns)

80
td(off)
100
Drain to Source Voltage

Gate to Source Voltage

60 VDS 12
tf
VDD = 10 V
30 tr
25 V
40 50 V 8 td(on)
10

20 VDD = 50 V 4
25 V 3
VGS = 10 V, VDD = 30 V
10 V PW = 5 μs, duty ≤ 1 %
0 0 1
0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10

Gate Charge Qg (nc) Drain Current ID (A)

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 4 of 7
HAT2038R, HAT2038RJ Preliminary

Reverse Drain Current vs. Maximum Avalanche Energy vs.

Source to Drain Voltage Channel Temperature Derating

Repetitive Avalanche Energy EAR (mJ)

Reverse Drain Current IDR (A) 10 2.5
IAP = 5 A
VDD = 25 V
8 2.0 L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
6 1.5
10 V
5V
4 1.0
VGS = 0, –5 V

2 0.5

Pulse Test
0 0
0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
Source to Drain Voltage VSD (V) Channel Temperature Tch (°C)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

10
Normalized Transient Thermal Impedance γ s (t)

D=1
1

0.5
0.2
0.1
0.1
0.05 θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
0.02
0.01 When using the glass epoxy board
0.01 (FR4 40 × 40 × 1.6 mm)
PW
PDM D=
T
0.001 lse
pu
h ot PW
1s T

0.0001
10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
Normalized Transient Thermal Impedance γ s (t)

D=1
1

0.5
0.2
0.1
0.1
0.05 θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
0.02
0.01 When using the glass epoxy board
0.01 (FR4 40 × 40 × 1.6 mm)
PW
PDM D=
T
e
0.001 uls
o tp PW
1sh T

0.0001
10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 5 of 7
HAT2038R, HAT2038RJ Preliminary

Avalanche Test Circuit Avalanche Waveform

1 VDSS
VDS
L EAR = • L • IAP2 •
2 VDSS – VDD
Monitor
IAP
Monitor V(BR)DSS
IAP
Rg D.U.T VDD VDS
ID
Vin 50 Ω
15 V

VDD
0

Switching Time Test Circuit Switching Time Waveform

90%
Vin Monitor Vout
Monitor
D.U.T. Vin 10%
RL
Vout 10% 10%

Vin VDD
50 Ω = 30 V 90%
10 V 90%

td(on) tr td(off) tf

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 6 of 7
HAT2038R, HAT2038RJ Preliminary

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
SOP-8 P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D FP-8DAV 0.085g

F
*1 D

5 bp
8

*2 E

HE

c
Index mark

1 4 Terminal cross section

NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
Z (Ni/Pd/Au plating)
DO NOT INCLUDE MOLD FLASH.
* 3 bp 2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
x M
e
Reference Dimension in Millimeters
Symbol
Min Nom Max
D 4.90 5.3
L1
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
A

b1
A1

c 0.15 0.20 0.25

L c1
0° 8°
y HE 5.80 6.10 6.20
Detail F e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08

Ordering Information
Part Name Quantity Shipping Container
HAT2038R-EL-E 2500 pcs Taping
HAT2038RJ-EL-E 2500 pcs Taping

REJ03G1167-0600 Rev.6.00 Aug 25, 2009

Page 7 of 7
 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
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have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.

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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

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© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.

Colophon .7.2