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Ds 11

The document provides specifications for the isc N-Channel MOSFET Transistor STP65NF06, highlighting its features such as high-speed switching, standard level gate drive, and robust performance. It includes absolute maximum ratings, thermal characteristics, and electrical characteristics relevant for applications in power supply and switching. The notice emphasizes that ISC products are not intended for specialized applications and disclaims any liability for their use.

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Gerardo Nava
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14 views2 pages

Ds 11

The document provides specifications for the isc N-Channel MOSFET Transistor STP65NF06, highlighting its features such as high-speed switching, standard level gate drive, and robust performance. It includes absolute maximum ratings, thermal characteristics, and electrical characteristics relevant for applications in power supply and switching. The notice emphasizes that ISC products are not intended for specialized applications and disclaims any liability for their use.

Uploaded by

Gerardo Nava
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor STP65NF06

·FEATURES
·With TO-220 packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·APPLICATIONS
·Power supply
·Switching applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 60 V

VGSS Gate-Source Voltage ±20 V

Drain Current-Continuous@TC=25℃ 60
ID A
TC=100℃ 42

IDM Drain Current-Single Pulsed 240 A

PD Total Dissipation 110 W

Tj Operating Junction Temperature -55~175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth(ch-c) Channel-to-case thermal resistance 1.36 ℃/W

Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor STP65NF06

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 60 V

VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A 11.5 14 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±0.1 μA

VDS= 60V; VGS= 0V;Tc=25℃ 1


IDSS Drain-Source Leakage Current μA
Tc=125℃ 10

VSDF Diode forward voltage ISD=60A, VGS = 0 V 1.5 V

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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