INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 200 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous 50 A
IDM Drain Current-Single Pulsed 200 A
PD Total Dissipation @TC=25℃ 300 W
Tj Max. Operating Junction Temperature 175 ℃
Tstg Storage Temperature -55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Channel-to-case thermal resistance
Rth(j-c) 0.5 ℃/W
Channel-to-ambient thermal resistance
Rth(j-a) 40 ℃/W
isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 V
VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V
RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A 40 mΩ
IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA
IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 25 μA
VSD Diode forward voltage IS=28A, VGS = 0V 1.3 V
isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark
