Scribd
Upload
78 views2 pages

Isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540: INCHANGE Semiconductor

This document provides specifications for the INCHANGE Semiconductor IRFR7540 N-channel MOSFET transistor. Some key features include a static drain-source on-resistance of less than 4.8mΩ, enhancement mode operation, and 100% avalanche testing. It is intended for synchronous rectifier applications. The document lists maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, gate threshold voltage, on-resistance, and leakage currents.

Uploaded by

kalangho
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
78 views2 pages

Isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540: INCHANGE Semiconductor

This document provides specifications for the INCHANGE Semiconductor IRFR7540 N-channel MOSFET transistor. Some key features include a static drain-source on-resistance of less than 4.8mΩ, enhancement mode operation, and 100% avalanche testing. It is intended for synchronous rectifier applications. The document lists maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, gate threshold voltage, on-resistance, and leakage currents.

Uploaded by

kalangho
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤4.8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·Synchronous rectifier applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 60 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous 110 A

IDM Drain Current-Single Pulsed 440 A

PD Total Dissipation @TC=25℃ 140 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(j-c) 1.05 ℃/W

Channel-to-ambient thermal resistance


Rth(j-a) 110 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 60 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=100μA 2.1 3.7 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=66A 4.8 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA

IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 1 μA

VSD Diode forward voltage Is=66A, VGS = 0V 1.2 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

You might also like