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Datasheet

This document provides information on the IRF4905 P-Channel MOSFET transistor from INCHANGE Semiconductor. It lists key features such as a maximum drain-source on-resistance of 0.02 ohms and enhancement mode operation. It also provides absolute maximum ratings, thermal characteristics, and electrical characteristics for the transistor.

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842 views2 pages

Datasheet

This document provides information on the IRF4905 P-Channel MOSFET transistor from INCHANGE Semiconductor. It lists key features such as a maximum drain-source on-resistance of 0.02 ohms and enhancement mode operation. It also provides absolute maximum ratings, thermal characteristics, and electrical characteristics for the transistor.

Uploaded by

Rio Candrapurwita
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.02Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliable device for use in a wide variety of applications.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage -55 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous -74 A

IDM Drain Current-Single Pulsed -260 A

PD Total Dissipation @TC=25℃ 200 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth(j-c) Channel-to-case thermal resistance 0.75 ℃/W

Rth(j-a) Channel-to-ambient thermal resistance 62 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -55 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA -2.0 -4.0 V

RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -38A 0.02 Ω

IGSS Gate-Source Leakage Current VGS= ±20V ±100 nA

IDSS Drain-Source Leakage Current VDS= -55V; VGS= 0V -25 μA

VSD Diode forward voltage Is= -38A; VGS = 0V -1.6 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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