DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D154

BAS216
High-speed switching diode
Product specification 2002 May 28
Supersedes data of 1999 Apr 22
Philips Semiconductors Product specification

High-speed switching diode BAS216

FEATURES DESCRIPTION
• Small ceramic SMD package The BAS216 is a high-speed switching diode fabricated in planar technology,
• High switching speed: max. 4 ns and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
cathode mark
max. 85 V handbook, 4 columns
a k k a
• Repetitive peak forward current:
max. 500 mA.

APPLICATIONS
bottom view side view top view MAM139
• High-speed switching in e.g.
surface mounted circuits. Marking code: A6.

Fig.1 Simplified outline (SOD110) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 85 V
VR continuous reverse voltage − 75 V
IF continuous forward current note 1 − 250 mA
IFRM repetitive peak forward current − 500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t=1s − 0.5 A
Ptot total power dissipation Tamb = 25 °C; see Fig.2; note 1 − 400 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note
1. Device mounted on an FR4 printed-circuit board.

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Philips Semiconductors Product specification

High-speed switching diode BAS216

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VF forward voltage see Fig.3
IF = 1 mA − 715 mV
IF = 10 mA − 855 mV
IF = 50 mA − 1 V
IF = 150 mA − 1.25 V
IR reverse current see Fig.5
VR = 25 V − 30 nA
VR = 75 V − 1 µA
VR = 25 V; Tj = 150 °C − 30 µA
VR = 75 V; Tj = 150 °C − 50 µA
Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF
trr reverse recovery time when switched from IF = 10 mA to − 4 ns
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
Vfr forward recovery voltage when switched from IF = 10 mA; − 1.75 V
tr = 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 200 K/W
Rth j-a thermal resistance from junction to ambient note 1 315 K/W
Note
1. Device mounted on an FR4 printed-circuit board.

2002 May 28 3
Philips Semiconductors Product specification

High-speed switching diode BAS216

GRAPHICAL DATA

MSA570 MBG382
500 300
handbook, halfpage

IF
(mA)
P tot
(mW) (1) (2) (3)
200

250

100

0 0
0 100 o 200 0 1 VF (V) 2
Tamb ( C)

(1) Tj = 150 °C; typical values.

Device mounted on an FR4 printed-circuit board.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible total power
dissipation as a function of ambient Fig.3 Forward current as a function of forward
temperature. voltage.

MBG704
102
handbook, full pagewidth

IFSM
(A)

10

10−1
1 10 102 103 tp (µs) 104

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

2002 May 28 4
Philips Semiconductors Product specification

High-speed switching diode BAS216

MSA563 MBH285
10 5 0.6
handbook, halfpage
IR Cd
(nA) (pF)
V R = 75 V
10 4 0.5

75 V
10 3 0.4

25 V
10 2 0.2

10 0
0 100 200 0 4 8 12 V (V) 16
T j ( o C) R

Dotted line: maximum values.

Solid lines: typical values. f = 1 MHz; Tj = 25 °C.

Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse
temperature. voltage; typical values.

2002 May 28 5
Philips Semiconductors Product specification

High-speed switching diode BAS216

handbook, full pagewidth

tr tp
t
D.U.T. 10%
RS = 50 Ω IF IF t rr
SAMPLING t
OSCILLOSCOPE
V = VR I F x R S R i = 50 Ω

90% (1)
VR
MGA881

input signal output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I 1 kΩ 450 Ω
I V
90%

R S = 50 Ω OSCILLOSCOPE V fr
D.U.T.
R i = 50 Ω

10%
MGA882 t t
tr tp

input output
signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

2002 May 28 6
Philips Semiconductors Product specification

High-speed switching diode BAS216

PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package SOD110

D E

cathode
identifier DIMENSIONS (mm are the original dimensions)
A
UNIT D E y
1 2 max.
2.10 1.40
0 0.5 1 mm mm 1.6 0.1
1.90 1.10
scale

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOD110 97-04-14

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Philips Semiconductors Product specification

High-speed switching diode BAS216

DATA SHEET STATUS

PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information  Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.

2002 May 28 8
Philips Semiconductors Product specification

High-speed switching diode BAS216

NOTES

2002 May 28 9
Philips Semiconductors Product specification

High-speed switching diode BAS216

NOTES

2002 May 28 10
Philips Semiconductors Product specification

High-speed switching diode BAS216

NOTES

2002 May 28 11
Philips Semiconductors – a worldwide company

Contact information

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© Koninklijke Philips Electronics N.V. 2002 SCA74

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Printed in The Netherlands 613514/05/pp12 Date of release: 2002 May 28 Document order number: 9397 750 09729