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IAT 1 Question

This document outlines the Internal Assessment Test I for the Electronic Devices course at National Engineering College, detailing the subject code, date, and marks distribution. It includes a series of questions divided into two parts, covering topics such as semiconductor devices, PN junction diodes, and bipolar junction transistors (BJTs). The assessment aims to evaluate students' understanding of key concepts and calculations related to electronic devices.

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24 views1 page

IAT 1 Question

This document outlines the Internal Assessment Test I for the Electronic Devices course at National Engineering College, detailing the subject code, date, and marks distribution. It includes a series of questions divided into two parts, covering topics such as semiconductor devices, PN junction diodes, and bipolar junction transistors (BJTs). The assessment aims to evaluate students' understanding of key concepts and calculations related to electronic devices.

Uploaded by

sivasubramanian.r25
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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NATIONAL ENGINEERING COLLEGE, K.R.

Nagar, Kovilpatti
(An Autonomous Institution, Affiliated to Anna University Chennai)
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
INTERNAL ASSESSMENT TEST – I
Subject Code: 23EC33C Date: 25.09.2024
Subject Name: Electronic Devices Marks: 50

PART A (5 x 2 = 10)
1. State Avalanche multiplication problem in semiconductor devices CO1-K2
2. Draw the energy band diagram of PN diode under equilibrium condition CO1-K2
3. Define built in potential of PN junction diode CO1-K2
4. Draw VI characteristics plot of ideal PN junction diode. CO1-K2
5. Consider a BJT in Common base configuration has current amplification ratio of 0.98 and voltage drop CO2-K2
across 1 KΩ is 2V. Find the base current.

6. For the common base circuit shown in Fig. 3, determine IC and VCB . Assume the transistor to be of CO2-K2
silicon

7. Why base region is lightly doped in bipolar junction transistor? CO2-K2

8. How can BJT will be operated as a switch? CO2-K2


9. What is Peak Inverse voltage of PN junction diode and state its importance CO1-K2

PART A (2 x 12 = 24)
10. (i) Determine the width of the depletion region of PN diode when reverse voltage bias of -2V is applied. CO1-K2
Assume NA and ND=1015 cm-3 for silicon diode.
(ii) Explain the Woking principle of PN diode under forward bias and reverse bias with the help of neat
diagram and its VI characteristics
11. (i) What is BJT and why it is called as current controlled device. Explain BJT characteristics in common CO2-K2
emitter configuration and state the importance of various parameters derived from its input and output
characteristics.
(ii) A transistor is connected in common emitter (CE) configuration in which collector supply is 8 V and
the voltage drop across resistance RC connected in the collector circuit is 0.5 V. The value of RC = 800 Ω.
If α = 0.96, determine : (i) collector-emitter voltage (ii) base current.

***** All The Best****

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