RBV600 - RBV610 SILICON BRIDGE RECTIFIERS
RBV25
PRV : 50 - 1000 Volts
3.9 ± 0.2
Io : 6.0 Amperes C3 30 ± 0.3
4.9 ± 0.2
FEATURES : ∅ 3.2 ± 0.1
* High current capability
20 ± 0.3
* High surge current capability
11 ± 0.2
* High reliability
* Low reverse current + ~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
17.5 ± 0.5
13.5 ± 0.3
* Ideal for printed circuit board
* Very good heat dissipation 1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction 10 7.5 7.5 2.0 ± 0.2
utilizing molded plastic technique ±0.2 ±0.2 ±0.2 0.7 ± 0.1
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
Dimensions in millimeters
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV RBV RBV RBV RBV RBV RBV
RATING SYMBOL UNIT
600 601 602 604 606 608 610
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C IF(AV) 6.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 200 Amps.
2
Current Squared Time at t < 8.3 ms. It 64 A2S
Maximum Forward Voltage per Diode at IF = 3.0 Amps. VF 1.0 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Typical Thermal Resistance (Note 1) RθJC 8.0 °C/W
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Notes : 1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
UPDATE : MARCH 6, 2000