MDD 44

Diode Modules IFRMS = 2x 100 A

IFAVM = 2x 64 A
VRRM = 800-1800 V

3 1 2 TO-240 AA 3
VRSM VRRM Type 2
V V 1

900 800 MDD 44-08N1 B

1300 1200 MDD 44-12N1 B
1500 1400 MDD 44-14N1 B
1700 1600 MDD 44-16N1 B
1900 1800 MDD 44-18N1 B

Symbol Test Conditions Maximum Ratings Features

IFRMS TVJ = TVJM 100 A
●
International standard package
IFAVM TC = 92°C; 180° sine 64 A JEDEC TO-240 AA
TC = 100°C; 180° sine 59 A
●
Direct copper bonded Al2O3 -ceramic
base plate
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1150 A ●
Planar passivated chips
VR = 0 t = 8.3 ms (60 Hz), sine 1300 A ●
Isolation voltage 3600 V~
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 A ●
UL registered, E 72873
VR = 0 t = 8.3 ms (60 Hz), sine 1200 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 6600 A2s
Applications
VR = 0 t = 8.3 ms (60 Hz), sine 7000 A2s ●
Supplies for DC power equipment
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 A2s ●
DC supply for PWM inverter
VR = 0 t = 8.3 ms (60 Hz), sine 5950 A2s ●
Field supply for DC motors
TVJ -40...+150 °C ●
Battery DC power supplies
TVJM 150 °C
Tstg -40...+125 °C
Advantages
VISOL 50/60 Hz, RMS t = 1 min 3000 V~ ●
Space and weight savings
IISOL £ 1 mA t=1s 3600 V~ ●
Simple mounting
Md Mounting torque (M5) 2.5-4/22-35 Nm/lb.in.
●
Improved temperature and power
Terminal connection torque (M5) 2.5-4/22-35 Nm/lb.in. cycling
●
Reduced protection circuits
Weight Typical including screws 90 g

Symbol Test Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394")

IR TVJ = TVJM; VR = VRRM 10 mA
VF IF = 200 A; TVJ = 25°C 1.60 V
VT0 For power-loss calculations only 0.8 V
rT TVJ = TVJM 4.3 mW
QS TVJ = 125°C; IF = 50 A, -di/dt = 0.64 A/ms 90 mC
IRM 11 A
RthJC per diode; DC current 0.59 K/W
per module other values 0.295 K/W
RthJK per diode; DC current see Fig. 6/7 0.79 K/W
per module 0.395 K/W
dS Creepage distance on surface 12.7 mm
dA Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s2

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-3

 MDD 44

Fig. 1 Surge overload current Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
IFSM: Crest value, t: duration at case temperature

Fig. 3 Power dissipation versus

forward current and ambient
temperature (per diode)

Fig. 4 Single phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load

© 2000 IXYS All rights reserved 2-3

 MDD 44

Fig. 5 Three phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature

Fig. 6 Transient thermal impedance

junction to case (per diode)

RthJC for various conduction angles d:

d RthJC (K/W)
DC 0.59
180° 0.61
120° 0.63
60° 0.66
30° 0.70

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.012 0.0012
2 0.045 0.095
3 0.533 0.455

Fig. 7 Transient thermal impedance

junction to heatsink (per diode)

RthJK for various conduction angles d:

d RthJK (K/W)
DC 0.79
180° 0.81
120° 0.83
60° 0.86
30° 0.90

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)
1 0.012 0.0012
2 0.045 0.095
3 0.533 0.455
4 0.2 0.495

© 2000 IXYS All rights reserved 3-3