MDD 95

Diode Modules IFRMS = 2x 180 A

IFAVM = 2x 120 A
VRRM = 800-2200 V
VRSM VRRM Type
V V
3 1 2 TO-240 AA 3
900 800 MDD 95-08N1 B 2
1300 1200 MDD 95-12N1 B 1
1500 1400 MDD 95-14N1 B
1700 1600 MDD 95-16N1 B
1900 1800 MDD 95-18N1 B
2100 2000 MDD 95-20N1 B
2300 2200 MDD 95-22N1 B

Symbol Test Conditions Maximum Ratings Features

IFRMS TVJ = TVJM 180 A ●
International standard package
IFAVM TC = 105°C; 180° sine 120 A JEDEC TO-240 AA
●
Direct copper bonded Al2O3 -ceramic
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 2800 A
base plate
VR = 0 t = 8.3 ms (60 Hz), sine 3300 A ●
Planar passivated chips
TVJ = TVJM t = 10 ms (50 Hz), sine 2500 A ●
Isolation voltage 3600 V~
VR = 0 t = 8.3 ms (60 Hz), sine 2750 A ●
UL registered, E 72873
òi dt
2
TVJ = 45°C t = 10 ms (50 Hz), sine 39 200 2
As
VR = 0 t = 8.3 ms (60 Hz), sine 45 000 A2s
Applications
TVJ = TVJM t = 10 ms (50 Hz), sine 31 200 A2s ●
Supplies for DC power equipment
VR = 0 t = 8.3 ms (60 Hz), sine 31 300 A2s ●
DC supply for PWM inverter
TVJ -40...+150 °C ●
Field supply for DC motors
TVJM 150 °C ●
Battery DC power supplies
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~ Advantages
IISOL £ 1 mA t=1s 3600 V~ ●
Space and weight savings
Md Mounting torque (M5) 2.5-4/22-35 Nm/lb.in.
●
Simple mounting
Terminal connection torque (M5) 2.5-4/22-35 Nm/lb.in.
●
Improved temperature and power
cycling
Weight Typical including screws 90 g ●
Reduced protection circuits

Symbol Test Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394")

IR TVJ = TVJM; VR = VRRM 15 mA
VF IF = 300 A; TVJ = 25°C 1.43 V
VT0 For power-loss calculations only 0.75 V
rT TVJ = TVJM 1.95 mW
QS TVJ = 125°C; IF = 50 A, -di/dt = 6 A/ms 170 mC
IRM 45 A
RthJC per diode; DC current 0.26 K/W
per module other values 0.13 K/W
RthJK per diode; DC current see Fig. 6/7 0.46 K/W
per module 0.23 K/W
dS Creepage distance on surface 12.7 mm
dA Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s2

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-3

 MDD 95

Fig. 1 Surge overload current Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
IFSM: Crest value, t: duration at case temperature

Fig. 3 Power dissipation versus

forward current and ambient
temperature (per diode)

Fig. 4 Single phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load

© 2000 IXYS All rights reserved 2-3

 MDD 95

Fig. 5 Three phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature

Fig. 6 Transient thermal impedance

junction to case (per diode)

RthJC for various conduction angles d:

d RthJC (K/W)
DC 0.26
180° 0.28
120° 0.30
60° 0.34
30° 0.38

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.013 0.0012
2 0.072 0.047
3 0.175 0.394

Fig. 7 Transient thermal impedance

junction to heatsink (per diode)

RthJK for various conduction angles d:

d RthJK (K/W)
DC 0.46
180° 0.48
120° 0.50
60° 0.54
30° 0.58

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)
1 0.013 0.0012
2 0.072 0.047
3 0.175 0.394
4 0.2 1.32

© 2000 IXYS All rights reserved 3-3