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Dsei60 06a

The document provides specifications for the DSEI 60 epitaxial diode, including maximum ratings, features, and applications. It highlights key characteristics such as a reverse voltage rating of 600 V, a forward current rating of 60 A, and a recovery time of 35 ns. The diode is suitable for various applications including high-frequency switching devices and uninterruptible power supplies.

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muhammad rehan
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0% found this document useful (0 votes)
22 views2 pages

Dsei60 06a

The document provides specifications for the DSEI 60 epitaxial diode, including maximum ratings, features, and applications. It highlights key characteristics such as a reverse voltage rating of 600 V, a forward current rating of 60 A, and a recovery time of 35 ns. The diode is suitable for various applications including high-frequency switching devices and uninterruptible power supplies.

Uploaded by

muhammad rehan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Fast Recovery DSEI 60 IFAVM = 60 A

Epitaxial Diode (FRED) VRRM = 600 V


trr = 35 ns

TO-247 AD
VRSM VRRM Type A C

V V
C
600 600 DSEI 60-06A A C

A = Anode, C = Cathode

Symbol Test Conditions Maximum Ratings Features

IFRMS TVJ = TVJM 100 A ●


International standard package
IFAVM ÿÿ① TC = 70°C; rectangular, d = 0.5 60 A JEDEC TO-247 AD
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 800 A ●
Planar passivated chips
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 550 A

Very short recovery time
t = 8.3 ms (60 Hz), sine 600 A ●
Extremely low switching losses

Low IRM-values
TVJ = 150°C; t = 10 ms (50 Hz), sine 480 A ●
Soft recovery behaviour
t = 8.3 ms (60 Hz), sine 520 A ●
Epoxy meets UL 94V-0
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1510 A2s
t = 8.3 ms (60 Hz), sine 1490 A2s
Applications
TVJ = 150°C; t = 10 ms (50 Hz), sine 1150 A2s
t = 8.3 ms (60 Hz), sine 1120 A2s ●
Antiparallel diode for high frequency
TVJ -40...+150 °C switching devices
TVJM 150 °C ●
Anti saturation diode
Tstg -40...+150 °C ●
Snubber diode

Free wheeling diode in converters
Ptot TC = 25°C 166 W
and motor control circuits
Md Mounting torque 0.8...1.2 Nm ●
Rectifiers in switch mode power
Weight 6 g
supplies (SMPS)

Inductive heating and melting

Uninterruptible power supplies (UPS)
Symbol Test Conditions Characteristic Values ●
Ultrasonic cleaners and welders
typ. max.

IR TVJ = 25°C VR = VRRM 200 mA Advantages


TVJ = 25°C VR = 0.8 • VRRM 100 mA
TVJ = 125°C VR = 0.8 • VRRM 14 mA ●
High reliability circuit operation

Low voltage peaks for reduced
VF IF = 70 A; TVJ = 150°C 1.5 V
protection circuits
TVJ = 25°C 1.8 V ●
Low noise switching
VT0 For power-loss calculations only 1.13 V ●
Low losses
rT TVJ = TVJM 4.7 mW ●
Operating at lower temperature or
RthJC 0.75 K/W space saving by reduced cooling
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns
IRM VR = 350 V; IF = 60 A; -diF/dt = 480 A/ms 19 21 A
L £ 0.05 mH; TVJ = 100°C

① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
036

IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-2


DSEI 60, 600 V

Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.

Dimensions Dim. Millimeter Inches


Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102

Fig. 7 Transient thermal impedance junction to case.

© 2000 IXYS All rights reserved 2-2

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