Fast Recovery DSEI 2x 101 VRRM = 600 V

Epitaxial Diode (FRED) IFAVM = 2x 96 A

trr = 35 ns

miniBLOC, SOT-227 B
VRSM VRRM Type
E72873
V V

600 600 DSEI 2x 101-06A

Symbol Test Conditions Maximum Ratings (per diode) Features

●
International standard package
IF(RMS) TVJ = TVJM 150 A ●
miniBLOC (ISOTOP compatible)
IF(AV)M ① TC = 70°C; rectangular, d = 0.5 96 A ●
Isolation voltage 2500 V~
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM TBD A ●
matched diodes f. parallel operation
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A ●
Planar passivated chips
t = 8.3 ms (60 Hz), sine 1300 A ●
two independent diodes
TVJ = 150°C; t = 10 ms (50 Hz), sine 1080 A
●
Very short recovery time
t = 8.3 ms (60 Hz), sine 1170 A ●
Extremely low switching losses
●
Low IRM-values
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2s ●
Soft recovery behaviour
t = 8.3 ms (60 Hz), sine 7100 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 5800 A2s miniBLOC, SOT-227 B
t = 8.3 ms (60 Hz), sine 5700 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 250 W
VISOL 50/60 Hz, RMS 2500 V~
IISOL £ 1 mA
Md Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
M4 screws (4x) supplied
Symbol Test Conditions Characteristic Values (per diode) Dim. Millimeter Inches
typ. max. Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
IR TVJ = 25°C VR = VRRM 3 mA B 7.80 8.20 0.307 0.323
TVJ = 25°C VR = 0.8 • VRRM 1 mA C 4.09 4.29 0.161 0.169
TVJ = 125°C VR = 0.8 • VRRM 20 mA D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
VF IF = 100 A; TVJ = 150°C 1.17 V F 14.91 15.11 0.587 0.595
TVJ = 25°C 1.25 V G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
VT0 For power-loss calculations only 0.70 V J 11.68 12.22 0.460 0.481
rT 4.7 mW K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
RthJC 0.5 K/W M 12.60 12.85 0.496 0.506
RthCH 0.05 K/W N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
trr IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C 35 50 ns P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
IRM VR = 100 V; IF = 80 A; -diF/dt = 200 A/µs 19 24 A R 3.94 4.42 0.155 0.174
L £ 0.05 mH; TVJ = 100°C S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
031

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 DSEI 2x 101, 600V

150 7 80
T = 100°C A TVJ= 100°C
A µC VJ
V = 300V 70 VR = 300V
125 6 R
Qr IRM 60
IF 5
100
IF=200A 50
4 IF=100A IF=200A
75 IF= 50A 40 IF=100A
TVJ=150°C 3 IF= 50A
30
50
TVJ=100°C 2
20
25 1 10
TVJ=25°C
0 0 0
0.0 0.5 1.0 V 1.5 100 A/ms 1000 0 200 400 600 A/ ms 1000
800
VF -diF/dt -diF/dt
Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM
versus -diF/dt versus -diF/dt

1.4 260 60 3.0

TVJ= 100°C TVJ= 100°C
ns V µs
VR = 300V IF = 100A
240 50 2.5
1.2
trr VFR
tfr
220
Kf 40 2.0
1.0 tfr VFR
200
IF=200A 30 1.5
Qr
IRM 180 IF=100A
0.8
IF= 50A
20 1.0
160
0.6
140 10 0.5

0.4 120 0 0.0

0 50 100 °C 150 0 200 400 600 A/ ms 1000
800 0 200 400 600 800 A/ms
1000
TVJ -diF/dt diF/dt
Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus TVJ versus diF/dt

1 Constants for ZthJC calculation:

K/W
i Rthi (K/W) ti (s)

D=0.7
1 0.02 0.00002
2 0.05 0.00081
ZthJC 0.5
3 0.076 0.01
4 0.24 0.94
0.3
5 0.114 0.45
0.2

0.1
0.1 0.05
Single Pulse

DSEI 2x101-06
0.05
0.001 0.01 0.1 1s 10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles

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