Semiconductors

Date of release: April 2004

Philips’ Low VCEsat Single Low VCEsat (BISS) transistors - PNP

Leaded SMD Leadless

(BISS) transistors SOT54

(TO-92)
SOT223
(SC-73)
SOT89
(SC-62)
SOT457
(SC-74)
SOT23 SOT346
(SC-59)
SOT323
(SC-70)
SOT363
SC-88)
SOT490
(SC-89)
SOT666 SOT883
(SC-101)
[RCEsat]
= mΩ
[VCEsat] = mV

Ptot max. 830 mW 2.000 mW 1.300 mW 750 mW 480 mW 250 mW 350 mW 430 mW 250 mW 300 mW 250 mW IC / IB = 10
portfolio [IC]
=A
[VCEO]
=V
IC=500 mA IC Max

0.5 15 PBSS3515F PBSS3515M < 500 < 250

Key features 40 PBSS3540F PBSS3540M < 700 < 350
• Extensive range of BISS transistors 1.0 20 PBSS5120T < 250 < 125 < 250
30 PBSS5130T < 220 < 110
• Low collector-emitter saturation voltage
40 PBSS5140V < 340 < 170 < 310
VCEsat, e.g. < 220 mV @ 5 A PBSS5140S PBSS5140D PBSS5140T PBSS5140U < 500 < 250 < 500
• Up to 5 A collector current capability IC 60 PBSS5160T PBSS5160K PBSS5160U PBSS5160V < 330 < 175 < 330
100 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T PBSS9110Y < 320 < 180 < 320
• Up to 10 A peak collector current ICM
2.0 20 PBSS5220T < 113 < 80 < 225
• High current gain hFE, even at high IC PBSS5320T < 105 < 70 < 300
• High performance / boardspace ratio 30 PBSS5230T < 220 < 110 < 350
40 PBSS5240V < 250 < 145 < 530
PBSS5240T PBSS5240Y < 220 < 110 < 350
Key benefits 50 PBSS5250T < 150 < 90 < 300
• Cost reduction potential PBSS5350T < 135 < 90 < 390
PBSS5250X < 160 < 90 < 320
• Higher circuit efficiency
3.0 20 PBSS5320X < 105 < 70 < 300
• Reduces heat generation of applications PBSS5320D < 133 < 80 < 400
• Higher PCB function density 30 PBSS5330X < 107 < 70 < 320
50 PBSS5350X < 135 < 90 < 390
• Enables miniaturization of end-products
PBSS5350S PBSS5350Z PBSS5350D < 150 < 100
4.0 20 PBSS5420D < 50 < 60 < 200
Key applications 40 PBSS5440D < 75 < 60 < 300
PBSS5540Z PBSS5540X < 80 < 375
• Switch for vibrate, input-power in portable
80 PBSS5480Z PBSS5480X < 75 < 55 < 300
equipment 5.0 20 PBSS5520Z PBSS5520X < 54 < 70 < 270
• Medium power peripheral drivers, e.g. fan, motor new products
• Strobe flash units for DSC and mobile phones released
planned
• Inverter applications, e.g.TFT displays
BISS BISS
• Power switch for LAN and ADSL systems
• Medium power DC/DC conversion VCC (opt.)
Vbat
• Battery chargers Vin

CONTROLLER Charger IC with

current measurement
MSE267
MSD923

DC/DC conversion Battery charger

 Semiconductors
Date of release: April 2004

Product news Single Low VCEsat (BISS) transistors - NPN

Leaded SMD Leadless
• First-to-market 2 A, 40 V solutions in small
SOT54 SOT223 SOT89 SOT457 SOT23 SOT346 SOT323 SOT363 SOT490 SOT666 SOT883 [RCEsat] [VCEsat] = mV
SOT666 package (TO-92) (SC-73) (SC-62) (SC-74) (SC-59) (SC-70) SC-88) (SC-89) (SC-101) = mΩ
Ptot max. 830 mW 2.000 mW 1.300 mW 750 mW 480 mW 250 mW 350 mW 430 mW 250 mW 300 mW 250 mW IC / IB = 10
[IC] [VCEO] IC=500 mA IC Max
=A =V
SOT666
0.5 15 PBSS2515F PBSS2515M < 500 < 250
1.6 mm x 1.6 mm x 0.55 mm
40 PBSS2540F PBSS2540M < 500 < 250
1.0 20 PBSS4120T < 200 < 110 < 250
• 500 mA solution in ultra small leadless 30 PBSS4130T < 220 < 120 < 270
40 PBSS4140V < 190 < 110 < 190
SOT883 (SC-101) package
PBSS4140S PBSS4140T PBSS4140U < 500 < 250 < 500
60 PBSS4160T PBSS4160K PBSS4160U PBSS4160V < 250 < 140 < 250
100 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T PBSS8110Y < 200 < 120 < 200
SOT883 (SC-101) 2.0 20 PBSS4320T < 105 < 70 < 310
1.0 mm x 0.6 mm x 0.5 mm 30 PBSS4230T < 200 < 100 < 320
40 PBSS4240V < 190 < 100 < 400
PBSS4240T PBSS4240Y < 200 < 100 < 320
• 3 A series in SOT89 (SC-62) for medium 50 PBSS4250X < 160 < 90 < 320
power switch applications, e.g. notebooks and PBSS4350T < 130 < 80 < 370
3.0 20 PBSS4320X < 105 < 70 < 310
motherboards
30 PBSS4330X < 100 < 60 < 300
50 PBSS4350X < 130 < 80 < 370
• 5 A, 20 V BISS transistor in SOT89 (SC-62) PBSS4350S PBSS4350Z PBSS4350D < 145 < 90
4.0 20 PBSS4420D < 50 < 50 < 200
for strobe flash applications
40 PBSS4440D < 75 < 50 < 300
PBSS4540Z PBSS4540X < 71 < 355
• Best-in-class 4 A, 80 V solutions for TFT 80 PBSS4480Z PBSS4480X < 54 < 40 < 216
5.0 20 PBSS5520Z PBSS4520X < 44 < 50 < 220
applications in SOT89 (SC-62)
new products
released
CCFL
planned
SOT89 (SC-62)
4.5 mm x 2.5 mm x 1.5 mm Double Low VCEsat (BISS) transistors
Vin BISS
Polarity SOT457 SOT363 SOT666 [RCEsat] [VCEsat] = mV
(SC-74) (SC-88) = mΩ
Ptot max. 750 mW 430 mW 300 mW IC / IB = 10
[IC] [VCEO] IC=500 mA IC Max
Q1 Q2
=A =V
CONTROL D1
CIRCUIT 0.5 15 2 x PNP PBSS3515VS < 500 < 250 < 250
NPN / PNP PBSS2515YPN PBSS2515VPN < 500 < 250 < 250
D2
2 x NPN PBSS2515VS < 500 < 250 < 250
MSE268 1.0 40 NPN / PNP PBSS4140DPN < 250 < 500
2.0 40 NPN / PNP PBSS4240DPN < 200 / 260 < 100 / 145 < 400 / 530
Backlight inverter for TFT display

Philips Semiconductors © Koninklijke Philips Electronics N.V. 2004

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Published in The Netherlands Document order number: 9397 750 13067