SPB11N60S5

Cool MOS™ Power Transistor VDS 600 V

Feature RDS(on) 0.38 Ω
• New revolutionary high voltage technology ID 11 A
• Ultra low gate charge
• Periodic avalanche rated PG-TO263

• Extreme dv/dt rated

• Ultra low effective capacitances
• Improved transconductance

Type Package Ordering Code Marking

SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 11
TC = 100 °C 7
Pulsed drain current, tp limited by Tjmax I D puls 22
Avalanche energy, single pulse EAS 340 mJ
I D = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.6
I D = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 11 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 125 W
Operating and storage temperature T j , T stg -55... +150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 20 V/ns
V DS = 480 V, ID = 11 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Soldering temperature, reflow soldering, MSL1 Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=11A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=500µΑ, VGS=V DS 3.5 4.5 5.5
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C, - - 25
Tj=150°C - - 250
Gate-source leakage current I GSS V GS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=7A, Ω
Tj=25°C - 0.34 0.38
Tj=150°C - 0.92 -
Gate input resistance RG f=1MHz, open Drain - 29 -

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Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 6 - S
ID=7A

Input capacitance Ciss V GS=0V, V DS=25V, - 1460 - pF

Output capacitance Coss f=1MHz - 610 -
Reverse transfer capacitance Crss - 21 -
Effective output capacitance,3) Co(er) V GS=0V, - 45 - pF
energy related V DS=0V to 480V

Effective output capacitance,4) Co(tr) - 85 -

time related
Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 130 - ns
Rise time tr ID=11A, R G=6.8Ω - 35 -
Turn-off delay time t d(off) - 150 225
Fall time tf - 20 30

Gate Charge Characteristics

Gate to source charge Qgs VDD=350V, ID=11A - 10.5 - nC
Gate to drain charge Qgd - 24 -
Gate charge total Qg VDD=350V, ID=11A, - 41.5 54
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=350V, ID=11A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er) DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 11 A
forward current
Inverse diode direct current, ISM - - 22
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=350V, IF =IS , - 650 1105 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 7.9 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.015 K/W Cth1 0.0001878 Ws/K
R th2 0.03 Cth2 0.0007106
R th3 0.056 Cth3 0.000988
R th4 0.197 Cth4 0.002791
R th5 0.216 Cth5 0.007285
R th6 0.083 Cth6 0.063

Tj R th1 R th,n E xternal H eatsink

T case
P tot (t)

C th1 C th2 C th,n

T am b

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1 Power dissipation 2 Safe operating area

Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
SPP11N60S5 10 2
140
W
A
120

110
10 1
100
Ptot

90

ID
80

70 10 0

60

50 tp = 0.001 ms
40 tp = 0.01 ms
10 -1 tp = 0.1 ms
30 tp = 1 ms
20
DC

10

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
1
10 35
K/W 20V
12V
A 10V
10 0

25
ZthJC

ID

10 -1 9V
20

D = 0.5
15
10 -2 D = 0.2
D = 0.1 8V
D = 0.05
D = 0.02 10

10 -3 D = 0.01
single pulse 7V
5

6V
10 -4 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 VDS 25
tp V

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5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS
18 2

A 20V
12V
10V 9V
14 mΩ

RDS(on)
8V
12
ID

10
20V
1
12V
8 10V
7V 9V
6 8V
7V
0.5 6V
4
6V

0 0
0 5 10 15 V 25 0 2 4 6 8 10 12 14 A 18
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs
SPP11N60S5
2.1 32
Ω
A
1.8

1.6 24
RDS(on)

1.4
ID

20 25 °C
1.2 150 °C
16
1

0.8 12

0.6
98% 8
0.4 typ
4
0.2

0 0
-60 -20 20 60 100 °C 180 0 4 8 12 V 20
Tj VGS

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9 Typ. gate charge 10 Forward characteristics of body diode

VGS = f (QGate) IF = f (VSD)
parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs
16
SPP11N60S5
10 2 SPP11N60S5

V
A
0.2 VDS max

12 0.8 VDS max

10 1
VGS

10

IF
8

6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 -1
0 10 20 30 40 50 nC 65 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy

IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V
11 350
A
mJ
9

8 250
EAS
IAR

7
200
6

5 Tj (START) =25°C
150
4

3 Tj (START) =125°C
100

2
50
1

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj

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13 Drain-source breakdown voltage 14 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=0.6mJ
SPP11N60S5
720 300

V
W

680
V(BR)DSS

PAR
660 200

640
150
620

600 100

580
50
560

540 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy

C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 4
7.5
µJ
pF
Ciss
6
10 3
5.5
Eoss

5
C

4.5
4
10 2
Coss
3.5
3
2.5
1 2
10 Crss
1.5
1
0.5
10 0 0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
VDS VDS

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Definition of diodes switching characteristics

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PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22

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Infineon Technologies AG,
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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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characteristics.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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Rev. 2.3 Page 11 2005-07-22