GaAs MMIC
Data Sheet Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V Ion-implanted planar structure
CF 750
SOT-143
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code (taped) MX Q62702-F1391
Pin Configuration 1 GND 2 D 3 G 4 S
Package1)
CF 750
1)
P-SOT143-4-1
For detailed dimensions see Page 9.
Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Gate-source peak current Channel temperature Storage temperature range Total power dissipat. (TS < 48 C)1)
1)
Symbol
Value 8 5 80 2 150 55 + 150 300
Unit V V mA mA
VDS
VGS
ID
+ IGSM
TCh Tstg Ptot
C C
mW
TS: Temperature measured at soldering point
Thermal Resistance Parameter Channel-soldering point (GND)
Data Sheet
Symbol
Value 340
Unit K/W
2001-01-01
RthChGND
1
GaAs Components
CF 750
20 k
D G 5 k 10 pF 500 S
EHT08527
Figure 1
Circuit Diagram
Electrical Characteristics TA = 25 C, unless otherwise specified DC Characteristics Symbol Limit Values min. Drain-Source Breakdown Voltage Drain Current S-pin not connected Drain Current S-pin connected to GND Transconductance S-pin connected to GND typ. 2 50 25 max. 2.8 V mA mA mS Unit Test Conditions
VDS(BR) IDSS,P IDSS gm
8 1.6
ID = 500 A, VGS = 4 V VGGND = 0 V, VDS = 3.8 V VGS = 0 V, VDS = 3.8 V ID = 10 mA, VDS = 3.8 V
Data Sheet
2001-01-01
GaAs Components
CF 750 Electrical Characteristics of CF 750 in Amplifier Application
TA = 25 C, VDGND = 3.8 V, RS = RL = 50 , unless otherwise specified.
Amplifier Application Power Gain Noise Figure 3rd Order Intermodulation 3rd Order Intermodulation Power Gain Noise Figure 3rd Order Intermodulation 3rd Order Intermodulation Symbol min. Limit Values typ. 11 1.6 1 10 10 1.9 1 9 max. dB dB dBm dBm dB dB dBm dBm Unit Test Conditions
GPS NF IPIP3 OPIP3 GPS F IPIP3 OPIP3
ID = 2 mA, f = 900 MHz ID = 2 mA, f = 900 MHz ID = 2 mA, f = 900 MHz ID = 2 mA, f = 900 MHz ID = 2 mA, f = 1.8 GHz ID = 2 mA, f = 1.8 GHz ID = 2 mA, f = 1.8 GHz ID = 2 mA, f = 1.8 GHz
Data Sheet
2001-01-01
GaAs Components
CF 750 Electrical Characteristics of CF 750 in Mixer Application TA = 25 C, VDGND = 3.8 V, RS = RL = 50 , unless otherwise specified. Mixer Application Symbol min. Single Sideband Noise Figure Limit Values typ. 4.5 max. dB Unit Test Conditions
FSSB
fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm
Conversion Gain
GA
15
dB
3rd Order Intermodulation
IPIP3
dBm
3rd Order Intermodulation
OPIP3
10
dBm
Data Sheet
2001-01-01
GaAs Components
CF 750 Typical Common Source S-Parameters Bias conditions: VDGND = 3.8 V, ID = 2 mA Source-Pad RF-grounded by capacitor with low inductance (< 0.5 nH)!
f
GHz 0.01 0.1 0.25 0.5 0.75 1.00 1.25 1.5 1.75 2.00 2.25 2.5 2.75 3.00 MAG 0.97 0.97 0.96 0.94 0.91 0.87 0.83 0.87 0.72 0.66 0.61 0.56 0.52 0.49
S11 ANG 1 3 8 16 26 34 42 49 57 65 73 81 87 93 MAG 1.78 1.78 1.76 1.73 1.70 1.68 1.65 1.62 1.59 1.54 1.51 1.47 1.45 1.42
S21 ANG 179 175 169 155 141 127 118 108 95 82 71 60 52 45 MAG 0.002 0.008 0.015 0.027 0.039 0.046 0.052 0.061 0.066 0.069 0.071 0.073 0.074 0.075
S12 ANG 89 84 78 75 71 64 62 57 55 52 54 60 63 66 MAG 0.98 0.98 0.97 0.95 0.93 0.91 0.89 0.88 0.87 0.86 0.85 0.84 0.83 0.82
S22 ANG 1 2 6 11 16 22 26 30 34 38 43 48 52 56
Data Sheet
2001-01-01
GaAs Components
CF 750 Typical Common Source Noise Parameters Bias conditions: VD = 3 V, ID = 2 mA, Z = 50
f
MHz 200 450 800 900 1200 1500 1800 1900 MAG 0.80 0.79 0.68 0.63 0.58 0.54 0.52 0.50
opt (F)
ANG 5 12 23 26 34 42 51 53
Rn
75 60 51 49 45 40 36 35
Rn/50
1.50 1.20 1.02 0.98 0.90 0.80 0.72 0.70
Fmin
dB 1.2 1.2 1.5 1.6 1.7 1.8 1.9 1.9
Data Sheet
2001-01-01
GaAs Components
CF 750 Output Characteristics ID = f(VDGND); at Nominal Operating Point; S not Connected
2.5
EHT08528
Output Characteristics ID = f(VDS); S Connected to GND
EHT08529
50
ID mA
2.0
VGGND = 0 V
-0.2 V
ID mA
40
VGS = 0 V
1.5
-0.4 V -0.6 V
30
-0.2 V
1.0
-0.8 V -1 V
20
-0.4 V
-0.6 V 10 -0.8 V -1 V
0.5
7 V 8
7 V 8
VDGND
VDS
Data Sheet
2001-01-01
GaAs Components
CF 750
3.8 V 1 nF CF 750 D G S 1 nF IF
RF
* GND
LO
EHT08530
Figure 2
Mixer Measurement and Application Circuit (No. 1)
* must be high capacitance to ensure good IF grounding at source
3.8 V 100 pF CF 750 D G S RF
RF
100 pF
GND
EHT08531
Figure 3
Amplifier Measurement and Application Circuit (No. 2)
Data Sheet
2001-01-01
GaAs Components
CF 750 Package Outlines P-SOT143-4-1 (Small Outline Transistor)
2.9 0.1 1.9 0.7 0.2
1.1 max 0.1 max 0.3 0.1 3 +0.2 acc. to DIN 6784
A 4
2.6 max 10 max
0.8 -0.05
+0.1
2 0.4 +0.1 -0.05
0.55 -0.1
1.7 0.25
M
0.08...0.15
2... 30
GPS05559
0.20
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Data Sheet 9
10 max 1.3 0.1
Dimensions in mm 2001-01-01
