BATANGAS STATE UNIVERSITY
COLLEGE OF ENGINEERING, ARCHITECTURE, AND FINE ARTS
MECHANICAL ENGINEERING DEPARTMENT
ECE425 – BASIC ELECTRONICS WITH MEASUREMENTS
LABORATORY EXPERIMENT NO. 5
BJT DC – BIASING CIRCUITS
SUBMITTED BY:
ME - 4107
GROUP 1
SUBMITTED TO:
ENGR. SARAH B. TOLENTINO
INSTRUCTOR
NOVEMBER 13, 2018
I. INTRODUCTION
II. OBJECTIVES
To measure the different parameters of circuit in different types of BJT DC Biasing Circuits and
compare the values obtained from MultiSim and the values calculated using formulas.
III. MATERIALS
MultiSim software
IV. PROCEDURES
1. Construct a BJT Fixed - Bias Circuit with VCC = 30V, RB = 1MΩ, RC = 3.3kΩ.
2. Measure IB, IC, and VCE using DMM.
3. Calculate IB, IC, and VCE and compare with the measured values, in tabular form. Use
β = 150.
4. Repeat steps 2 and 3 using a Voltage Divider Bias Circuit with parameters; V CC = 20V, R1
= 6.8MΩ, R2 = 1MΩ, R3 = 3.3kΩ, RE = 2.2kΩ.
V. RESULTS AND FINDINGS
Table 1. BJT FIXED – BIAS CIRCUIT
PARAMETER MEASURED VALUE CALCULATED VALUE
IB (A)
IC (A)
VCE (V)
Table 2. EMITTER STABILIZED BIAS CIRCUIT
PARAMETER MEASURED VALUE CALCULATED VALUE
IB (A)
IC (A)
VCE (V)
Table 3. VOLTAGE DIVIDER BIAS CIRCUIT
PARAMETER MEASURED VALUE CALCULATED VALUE
IB (A)
IC (A)
VCE (V)
VI. SUMMARY
VII. CONCLUSION
