May 2007

Product & Application Guide 2007

Small Signal Discretes

www.infineon.com/smallsignaldiscretes
Table of Contents

Applications Mobile Communication …………….. 5

Consumer …………………………………. 19
Automotive & Industrial..…………. 37
ESD / EMI Proctection ………….…. 57
Lighting ………….……………………….. 76

RF Discretes Introduction ……………………………. 81

RF Transistors ……………………….… 83
RF MMICs ………………………………… 102
RF Diodes ……………………………….. 113
RF PIN Diodes …………………………. 115
RF Varactor Diodes …………………. 126
RF MOSFET …………………………….. 132

Schottky Diodes ……………………………………………….… 141

© 2007 Infineon Technologies AG. All rights reserved. Page 2

Table of Contents

HiPAC, TVS Diodes, Silicon Microphone ………………………………………………… 163

HiPAC …………………………………….… 165
TVS Diodes ………………………………… 176
Silicon Microphone …………………… 183

LED Drivers …………………………………………………… 186

AF Discretes Introduction ……………………………… 201

Digital Transistors ……………………… 204
General Purpose Transistors …… 208
General Purpose Diodes …………… 212

General Information Packages …………………………………… 224

Internet Navigation…………………… 227
Application Notes ……………………… 229
Nomenclature …………………………… 233
MatQ ……………………………………….… 237

© 2007 Infineon Technologies AG. All rights reserved. Page 3

Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 4

Table of Contents

„ Applications

„ Mobile Communication

„ Consumer

„ Automotive & Industrial

„ ESD/EMI Protection

„ Lighting

© 2007 Infineon Technologies AG. All rights reserved. Page 5

General Transceiver RF Front-end Circuit
> Applications > Mobile Communication

H3-Filters
RF IF HiPAC IPD
BGH92M
BGH182M

Buffer
RF Bipolar
BGA420
BFP420
BFR92x
BFR93Ax
BFR340
AGC
Buffer
RF Bipolar

IF BGA420
BFP420
BFR92x
BFR93Ax
BFR340
Low Noise Amplifier Antenna switches & Power Detection
RF Bipolar Switched matching RF Schottky Diodes
(for PA in Dual/Triband)
BFP640 SiGe Transistors RF PIN Diodes BAT15x
BFP740 SiGe:C Transistor BAT68x
BGA428 Si MMIC BA892x. BAR88x
BAT62x
BGA622 SiGe MMIC BAR63x BAR89x
BAS70x
BGA734L16 SiGe:C MMIC BAR64x BAR90x Recommended Products
(TriBand) BAR65x in RED !
© 2007 Infineon Technologies AG. All rights reserved. Page 6
Multiband (GSM/EDGE/UMTS) Mobile Phone
> Applications > Mobile Communication
Band SW BGA428 BPF

ANT SW Diodes 1900

BA892x BAR63x 1800

BAR64x BAR65x PA BGH92M
GSM/
BAR88x BAR89x BGA428 850/900 EDGE
BAR90x
1800/1900 TRX
ANT SW
BPF
BGH182M 850

Transceiver
900
PA
1950

Band I 1880

836

Band II UMTS
2140
TRX
1960
Band V
Power
Detection Diodes 882
Duplexer
BAT15x BAT68x BPF Recommended
BGA734L16
BAT62x BAS70x Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 7

Cellular Phone
ESD/EMI-Protection and RF Passive Integration
> Applications > Mobile Communication

Analog IC
BGF100/BGF200 Power
BASxx/BATxx Supply
ESD5V0Sx-series

TV
USB BGF111

LCD
LCD
BGF108/BGF109 TX
BGF109L 1800/1900 BGH92M
BGH182M
USB
USB ESD8V0L2B-03L 850/900

Transceiver
Quadband
Camera ESD5V0Sx-series

Digital IC
PA
SIM Card BGF105/BGF106
SD
SIMCard
Card BGF110

SwitchModule
Antenna
MMC BGF104
RX
Keypad
Keypad ESD5V0Sx-series 1800/1900
850/900
I/O
I/O Data
Data ESD5V0Sx-series

HiPAC Product Portfolio ESD/EMI-Protection ESD-Protection H3-filter + Balun

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 8

Antenna Switch Module (ASM)
Example: Triple Band Front End
> Applications > Mobile Communication

TX GSM RX GSM RX PCS RX DCS TX DCS

PIN Diode BAR63xx, BAR64xx, BAR65xx, BAR88xx, BAR89xx, BAR90xx

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 9

Global Positioning System (GPS) for Mobile Phones
GPS Receiver
> Applications > Mobile Communication

SAW

BPF BPF Mixer BPF

Signal
Processing
Amp

LO GPS Receiver/ASIC

LNA BGA615L7, BGA622(L7), BGA428,

BFP700series, BFP460, BFP540ESD

ESD Protection ESDxPyRF-series

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 10

Wireless LAN (802.11b/g)
2.4 GHz WLAN Front-End
> Applications > Mobile Communication

2.4 – 2.5 GHz

DPDT IEEE802.11
Antenna WLAN
diversity Transceiver
&BaseBand

MMIC: BGA622L7
LNA
RF Transistor: BFP640 / 640F / 620 / 620F, BFP700series

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 11

Cordless Phone (DECT, WDCT,...)
1.9 GHz Cordless Phone - Block Diagram
> Applications > Mobile Communication

1.9 GHz
RX

Transceiver Baseband IC

TX

LNA BGA622(L7)

ANT SW BAR63x, BAR64x, BAR88x, BAR89x, BAR90x, BAR65x

PA BF776 + BFP650, BFP450

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 12

RF Discretes for Cordless Phone
2.4GHz Cordless Phone
> Applications > Mobile Communication
BPF

2.4 GHz
Buffer Amp
BPF

xN

Multiplier
BFR182T,
BFR300Tseries

LNA BGA622(L7) ANT SW BAR88x Buffer BFR182

BAR89x BFR300series
BAR90x BFP460

PA 1. stage BF776 MIX BFR300series

2. stage BFP650 VCO BFR300series
BFP540 BBY5xseries
3. stage BFP650

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 13

RF Discretes for Cordless Phone
5.8GHz Cordless Phone
> Applications > Mobile Communication

BPF

5.8 GHz
Buffer Amp

BPF

xN

Multiplier
BFP640

LNA BFP700series, Buffer BF776 PA 1. stage BFR740L3

BF776 2. stage BFR750L3
3. stage BFR750L3

ANT SW BAR50x MIX BF776 VCO BFR300series

BAR89x BBY5xseries
BAR90x
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved. Page 14
Bluetooth (BT)
Front End for Bluetooth Class 1
> Applications > Mobile Communication

2.45GHz
RX

Transceiver
TX

Oscillator
Module

MMIC: BGA622L7, BGA428

LNA PA RF Transistor: BFP450
BGA427
RF Transistor: BFP640 / 640F / 620
620F / 540F / 640
BFP700series
ANT SW BAR88x, BAR90x LO BFP420F, BFP540F, BFP620F
BFP640, BFR340F, BFR360F
BAR63x, BAR64x
BBY5X, BBY6X
BAR65x
Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 15

WiMAX Transceiver System
> Applications > Mobile Communication

WiMAX frequencies
Low: 2.3 – 2.7 GHz
Mid: 3.3 – 3.7 GHz
Rx
Diplexer Balun

DPDT WiMAX
Antenna
Single/Dual Band
diversity Transceiver
& BaseBand

Tx PA Balun
Diplexer

MMIC: BGA622L7 (Low Band)

LNA
RF Transistor: BFP640 / 640F / 620 / 620F (Low & Mid Bands),
BFP700series (Low & Mid Bands)
Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 16

VCO Module
for W-CDMA 2.1 GHz
> Applications > Mobile Communication

VCTRL 0.5 - 3.0 V

VCTRL

RFOUT

f = 2110 MHz – 2170 MHz

Varactor Diode: BBY58-02L

RF-Transistor: BFR360L3

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 17

High Isolation Schottky Diode Pair
for Power Detection
> Applications > Mobile Communication

to Antenna Switch

PA
Detector Diode

Differential
Reference Diode Amplifier

Schottky Diode Pair BAT62-09S, BAT63-07W

© 2007 Infineon Technologies AG. All rights reserved. Page 18

Table of Contents

„ Applications

„ Mobile Communication

„ Consumer

„ Automotive & Industrial

„ ESD/EMI Protection

„ Lighting

© 2007 Infineon Technologies AG. All rights reserved. Page 19

Wireless LAN (802.11b/g)
2.4 GHz WLAN Front-End
> Applications > Consumer

BPF
2.4 – 2.5 GHz

DPDT
Antenna Transceiver
diversity &BaseBand

BPF PA

MMIC: BGA622L7 (2.4GHz - 802.11 b/g)

LNA
RF Transistor: BFP640 / 640F / 620 / 620F, BFP700series

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 20

Wireless LAN (802.11b/g, a/b/g/n)
2.4 and 5 GHz WLAN Front-End
> Applications > Consumer

Transceiver & Baseband Chipset

2.4 GHz

5 GHz

Antenna PA
diversity
2.4 GHz
DPDT

5 GHz

FE-Module

2.4GHz: MMIC: BGA622L7 RF Transistors: BFP640 / 640F / 620 / 620F, BFP700series

LNA 5GHz: RF Transistor: BFP640 / 640F / 620 / 620F, BFP700series
2.4&5GHz: MMIC: T1515, BGA700L16

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 21

Reference Design Tuners
with Infineon IC & Discretes
> Applications > Consumer

5HIHUHQFHGHVLJQVDYDLODEOHDW,QILQHRQ7XQHU'HYLVLRQ

Target application Module IC from COM TU Examples of Discretes Used

Analog Terrestrial / Cable

Tuner KTS6027-2
(PAL/NTSC)
BB535, BB555, BB565
Digital Cable Tuner TUA6030
BB639C, BB659C. BB644, BB664
Digital Terrestrial DVB-T Tuner TUA6034 BB669, BB689, BB640
NIM TUA6034 + TDA6192 + Demod* BF2030W, BF2040W, BF1005S
BG3130/R
ATSC Tuner TUA6034, TUA6030 BG3123R
NIM TUA6034 + TDA6192 + Demod*
ISDB-T Tuner TUA6034
Digital Portable 5V Half-NIM TUA6034 + TDA6192 BBY5502W
3V T-DMB Half-NIM TUA6045 BBY5602W
BFP540ESD
3V DVB-H/T UHF Half-NIM TUA6041 BF5030W
3V 3-band Half-NIM TUA6041 BG5130R

'HPRGXODWRU,&IURP&RRSHUDWLRQSDUWQHU

© 2007 Infineon Technologies AG. All rights reserved. Page 22

Module Tuner for Analog / Cable / Terrestrial
> Applications > Consumer

VHF I: 47 ... 160MHz

Tank
Circuit

RF Input VHF II/III: 160 ... 470MHz Mixer

47 ... 860MHz Oscillator Tank
PLL Circuit
IC

UHF: 470 ... 860MHz

Tank
Circuit

BG3130/R (Dual) BB659C, BB664

MOSFET VHF III/UHF Varactor Diode BB689,
BG3123/R (Dual)
BG5130R (Dual)
Tank
Circuit
VHF III/UHF Switching: BA892/ -02L

MOSFET VHF I/II BF2030W

BF2040W Varactor Diode BB555
BF5030W VHF I/II BB565

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 23
T-DMB/DAB in VHF Band III and L-Band
> Applications > Consumer
VHF III 170MHz-240MHz

Mixer
Oscillator
PLL
e.g. TUA6045
L-Band

Tank
Circuit

LNA BFP460*, BFP540ESD* Tuner Filter/ BBY55-02W, BBY56-02W

*ESD hardened
Tank
Circuit Tank Circuit
ESD Protection ESDxPyRF-series MOSFET BF5030W

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 24

FM Tuner
> Applications > Consumer

RF signals
AGC
FM
Tuned Tuned
Filter Filter
Mixer Fixed IF signal
Oscillator
PLL
IC
AM Prestage
Oscillator
Tank
Circuit
AGC AM + FM

Oscillator Varactor diode MOSFET Gain control

Tank
Circuit BB804 BF998R BC848
BB814 BF999
BB844 BF1009SR
Tuned BB914
BAR14-1, BAR61
Filter
BA595, BA895

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 25
Si-Tuner System for CATV/DVB-T
> Applications > Consumer

SAW

CATV / DVB-T: 40 …860 MHz

Demod
VGA Mixer Mixer

VCO 1 VCO 2
Si-Tuner

LNA BFP460*, BFP540ESD*, BFP700series

BGA622(L7), BGA612, BGA614, BGA616 *ESD hardened
ESD ESDxPyRF-series
Protection
Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 26

Si-Tuner System for Mobile TV
> Applications > Consumer

DVB-H: VHF III/UHF/L-Band

DVB-S: 950…2150MHz

Demod

GSM VGA Mixer

Rejection

VCO 1
Si-Tuner

LNA BGA622(L7), BGA612, BGA614, BGA616

BFP460*, BFP540ESD*, BFP700series *ESD hardened

ESD ESDxPyRF-series
Protection
Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 27

Active Antenna (Tuner, Cellular, GPS)
for Portable Applications
> Applications > Consumer

BPF
Receiver
IC
1st LNA 2nd LNA 3rd LNA

Cable

1st/ 2nd LNA BFP700series, BFP640, BFP640F

3rd LNA BFP650

ESD Protection ESDxPyRF-series

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 28

WiMAX Transceiver System
> Applications > Consumer

WiMAX frequencies
High: 5.7 – 5.9 GHz
Mid: 3.3 – 3.7 GHz
Low: 2.3 – 2.7 GHz Rx
Diplexer Balun

WiMAX
DPDT Transceiver
Antenna Single/Dual or
diversity Triple Band
& Baseband

Tx PA Balun
Diplexer

MMIC: BGA622L7 (Low Band),

LNA T1515 & BGA700L16 (Low / High Band)
RF Transistor: BFP640 / 640F / 620 / 620F (Low / Mid / High Band),
BFP700series (Low / Mid / High Band)

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 29

UWB Transceiver System
> Applications > Consumer

Broadband
Filter Balun
UWB TRX IC
Antenna Data Modulation
diversity (UWB Puls Generation)
&
Correlation Receiver
DPDT &
Switch BaseBand IC
Broadband Balun
Filter

LNA BFP700series

© 2007 Infineon Technologies AG. All rights reserved. Page 30

Bluetooth (BT)
Front End for Bluetooth Class 1
> Applications > Consumer

2.45GHz
RX

Transceiver
TX

Oscillator
Module

MMIC: BGA622L7, BGA428

LNA PA BFP450
BGA427
RF Transistor: BFP640 / 640F / 620
620F / 540F / 640
BFP700series
ANT SW BAR88x, BAR90x LO BFP420, BFP540, BFP620F
BAR63x, BAR64x BFP640, BFR340F, BFR360F
BAR65x BBY5X, BBY6X

© 2007 Infineon Technologies AG. All rights reserved. Page 31

Low Noise Block (LNB)
Twin LNB - Block Diagram
> Applications > Consumer

LNA IF Amplifiers

H Output 1

LNA2
Switch
Matrix
IF
12 GHz
950-1950MHz

V Output 2

LNA2 BFP740, BFR740L3 IF Amplifier RF-Tr.: BFP420, BFP405

BFP540
Mixer BF776 MMIC: BGA612 / 614 / 616

DRO BFP420, BF776 Switch BAR88x, BAR90x,

Oscillator BAR63x, BAR64x,
BAR65x

New Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 32

SMM310 Si-MIC for Portable Applications
> Applications > Consumer

Silicon Microphone

R
CMbias
VMICN
VDD

Ccouple
OUT INP

CEMC
(30pF) INM
VSS
Ccouple
SMM310 Si-Microphone with
integrated EMC-Capacitor
VMICN

Baseband Chip

© 2007 Infineon Technologies AG. All rights reserved. Page 33

Active Bias Controller/Universal Current Source
for GaAs and BJT Transistors/MMICs
> Applications > Consumer
Vcc (2 … 18V)

~ 0.7V

Bip-Tr.
Input Output
Matching Matching

Current Source BCR400W, BCR401R, BCR402R, BCR410W

© 2007 Infineon Technologies AG. All rights reserved. Page 34

Bridge Rectifier Diode for Power Supplies
> Applications > Consumer

AC
Power
Supply IC DC
BGX50A

EMI/EMC filter

Bridge Rectifier BGX50A

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 35

 PC Motherboard
Protection devices and discrete components
> Applications > Consumer
ESD/EMI Discretes content
Interface protection
CPU Clock
USB Generator
AF Transistors for
Video
• current & voltage supply
Firewire RAM Hi-Speed
• switching and drivers
SRAM cache DRAM
Memory (Main Memory)
TV Out Video
Processor
AF switching diodes
BIOS Boot
VGA Out Memory
Firmware

CardReader
Local bus Local bus
LAN Power
to to
Network on
External Storage bus
SCSI Bus PCI Bus
reset Clipping & Clamping
Bridge Bridge
Schottky Diodes
Motherboard

Protection diode ESDOP8RFL, ESD5V0Sx, ESD8VOLxx

AF transistors BCRxx, BCxx, SMBTxx

AF Diodes BATxx, BASxx, BAVxx

ESD/EMI HiPAC & TVS diodes

HiPAC BGF110, BGF104, BGF109, BGF100, BGF200
)
Discrete Solution* ESDOP8RFL, ESD5V0Sx, ESD8VOLxx *) w/o EMI filtering
© 2007 Infineon Technologies AG. All rights reserved. Page 36
Table of Contents

„ Applications

„ Mobile Communication

„ Consumer

„ Automotive & Industrial

„ ESD/EMI Protection

„ Lighting

© 2007 Infineon Technologies AG. All rights reserved. Page 37

Tire Pressure Monitoring System (TPMS), Remote
Keyless Entry (RKE) and Remote Start Applications
> Applications > Automotive

TX
TX

RX

TX f1 f2 TX

TX

RKE KeyFob

© 2007 Infineon Technologies AG. All rights reserved. Page 38

TPMS, RKE & Remote Start
KeyFob, Receiver Solution for long Antenna Range
> Applications > Automotive
e.g. 315 / 434 MHz

TX

Receiver IC
TPMS

Bandpass Filter e.g. TDA523X

(Optional)

TX

Rx LNA BFP460*, BFP540ESD*

*ESD Hardened
RKE
Rx ESD ESDxPyRF-series
Protection
TX

RKE KeyFob for Remote Start e.g. Aircon etc.

Osc/Buffer RF Transistors: BFR182

Tx PA RF Transistors: BFP450

© 2007 Infineon Technologies AG. All rights reserved. Page 39

Car Alarm Transceiver Solution
(KeyFob and Car Unit)
> Applications > Automotive

e.g. 315 / 434 RX

MHz Transceiver IC

e.g. TDA5255

TX

LNA ESD Hardened RF Transistors: ANT SW BAR50x

BFP460*, BFP540ESD* BAR89x
* ESD Hardened BAR90x
MMIC: BGA616
PA
RF Transistors: BFP450, BFP650

© 2007 Infineon Technologies AG. All rights reserved. Page 40

Global Positioning System (GPS)
GPS Receiver
> Applications > Automotive

1575.42 MHz

Amp Mixer BPF

Signal
Processing
(opt.)

LO
GPS Receiver/ASIC

BGA615L7, BGA622(L7), BGA428

LNA
BFP640, BFP460*, BFP540ESD* – * ESD Hardened RF-Transistor

ESD Protection ESDxPyRF-series

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 41

Active Antenna (Tuner, Cellular, GPS, SDARS...)
Example: Solution for SDARS Radio 2332.5 - 2345 MHz
> Applications > Automotive

1st LNA 2nd LNA BPF 3rd LNA

Coax cable
Approx. 14dB loss

1st/ 2nd LNA BFP740, BFP640, BFP640F

3rd LNA BFP650

ESD Protection ESDxPyRF-series

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 42

ZigBee
low power digital radio system up to 2.5 GHz
> Applications > Automotive

RF IC

LNA RF Transistors: BFR705L3RH, BFP540ESD, BFP700series

MMIC: BGA622, BGA428

RF Transistors: BFP450, BFP650

Driver MMIC: BGA612, BGA614, BGA616, BGA420

PIN Diode BAR88x, BAR90x, BAR63x, BAR64x, BAR65x

Switch

© 2007 Infineon Technologies AG. All rights reserved. Page 43

Electronic Toll Collect (ETC)
ETC – 5.8GHz Electronic Toll Collect
> Applications > Automotive

Rx RF
Inter- Rx IF
stage

RF TOP

Tx RF
Inter- Tx IF
stage

LNA RF Transistors: BFP640F, BFP700series LO BBY5X..., BBY6X...

PA RF Transistors: 2xBFP520+BFP650 ANT SW BAR50-02L

© 2007 Infineon Technologies AG. All rights reserved. Page 44

Discrete Based Oscillator
for RKE (Remote Keyless Entry) KeyFob
> Applications > Automotive
VCC (2.4 V … 3.2 V)

RFOUT

VON

f = 315 MHz
ICC = 6 mA (CW-mode)
POUT = 8.3 dBm @ 50 Ȏ

RF-Transistor: BFR182

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 45

Schottky Diodes for 24GHz Radar System
> Applications > Automotive

Double-Balanced
Mixer
24GHz

BB/IF

LNA Balun
Balun Buffer VCO
Amplifier

RF Schottky Diode BAT24-02LS

© 2007 Infineon Technologies AG. All rights reserved. Page 46

Automotive CAN Network
ESD-protection of CAN Bus Transceiver
> Applications > Automotive & Industrial

- w/o external TVS: ”8kV contact

- w external TVS: >30kV contact

CAN Transceivers
CAN High
CAN
Transceiver CAN Low CAN Bus

CAN-Bus

ESD Protection ESD24VS2B

© 2007 Infineon Technologies AG. All rights reserved. Page 47

Engine/ Injection Management
> Applications > Automotive

Engine Management Unit Schottky diodes

BAS16
BAS21
BAS28
BAS70-05

AF diodes
BAV170
BAW101

Transistor:
BCP51
BCV46
Gasoline Injection Management Unit BC847PN
BC817
BC807

Small Scale
Integration Devices

Active Bias
Controller:
BCR400W or
BCR410W

LED driver:
BCR40xU

© 2007 Infineon Technologies AG. All rights reserved. Page 48

Convenience and Safety
> Applications > Automotive

Airbag Module
Door Module:
Side Mirror

Window Lifter

Seat Drives

E.g. door module : AF Transistors 3x BC847S, 5x BC857S, 1x BC817-40, BC817SU

Digital Transistors 2x BCR135, 2x BCR185
AF Diodes 1x BAT64, 2x BAV70
LED driver BCR40xU
CAN ESD Protection ESD24VS2B

© 2007 Infineon Technologies AG. All rights reserved. Page 49

Home: Comfort, Control and Security
> Applications > Industrial

Wireless sensor hub

Wireless
Glass break detector
Wireless
smoke detector

Thermostat Control
(radiator side)
Wireless door/
window contact

Thermostat Control
Wireless motion sensor
(operator side)

© 2007 Infineon Technologies AG. All rights reserved. Page 50

Home Comfort, Control and Security
Thermostat Control – radiator side (EU: 868 MHz)
> Applications > Industrial

RF - Tx

µ controller

RF - Rx SPDT

e.g. TDA5255
Stepper
motor
driver

LNA BFP460*, BFP540ESD* – * integrated ESD protection

System ESD ESDxPyRF-series

Protection
Discrete: BFP450 + BFP405
Driver MIMIC: BGA622L7, BGA612, BGA614, BGA616

PIN Diode BAR88x, BAR90x, BAR63x, BAR64x, BAR65x

Switch

© 2007 Infineon Technologies AG. All rights reserved. Page 51

Home Comfort, Control and Security
Thermostat Control – operator side
> Applications > Industrial

RF - Tx
µ controller
LCD
&
display
NV memory

Switch RF - Rx

e.g. TDA5255

Touch Pad

LNA BFP460*, BFP540ESD* – * integrated ESD protection

System ESD ESDxPyRF-series

Protection

Driver Discrete: BFP450 + BFP405

MIMIC: BGA622L7, BGA612, BGA614, BGA616
PIN Diode BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
Switch

© 2007 Infineon Technologies AG. All rights reserved. Page 52

Home Comfort, Control and Security
Wireless smoke sensor hub (EU: 868MHz / NAFTA: 434MHz)
> Applications > Industrial

RF - Tx
µ controller
&
NV memory

Switch RF - Rx

e.g.TDA525x
Bus I/F

LNA BFP460*, BFP540ESD* – * integrated ESD protection

ESD Protection ESDxPyRF-series

Discrete: BFP450 + BFP405

Driver MIMIC: BGA622L7, BGA612, BGA614, BGA616
PIN Diode Switch BAR88x, BAR90x, BAR63x, BAR64x, BAR65x

© 2007 Infineon Technologies AG. All rights reserved. Page 53

Home Comfort, Control and Security
Wireless smoke sensor
> Applications > Industrial

RF - Tx
µ controller
&
NV memory

Switch RF - Rx

e.g.TDA525x
Smoke
sensor

LNA *BFP460, *BFP540ESD – *integrated ESD protection

ESD Protection ESDxPyRF-series

Discrete: BFP450 + BFP405

Driver MIMIC: BGA622L7, BGA612, BGA614, BGA616
PIN Diode BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
Switch

© 2007 Infineon Technologies AG. All rights reserved. Page 54

Home Comfort, Control and Security
RF controlled set top box
> Applications > Industrial

Connection Ports
MODEM

SMPS

RF - Rx

e.g.TDA52XX
µC

Smart Card

HDD

IR
USB uCOM Controls
sensor

LNA BFP460*, BFP540ESD* – * integrated ESD protection

ESD Protection ESDxPyRF-series

© 2007 Infineon Technologies AG. All rights reserved. Page 55

RF Metering, AMR (Automatic meter reading)
RKE Based

433.9MHz
Mixer

BPF
TRX
LO &
Signal
Processing

PIN Diode BAR88x, BAR90x, BAR63x

Driver Amplifier 3x BFP460*
BAR64x, BAR65x
* integrated ESD Switch
LNA BFP405
Varactor BBYxx
ESD Protection ESDxPyRF-series
Diode

© 2007 Infineon Technologies AG. All rights reserved. Page 56

Table of Contents

„ Applications

„ Mobile Communication

„ Consumer

„ Automotive & Industrial

„ ESD/EMI Protection

„ Lighting

© 2007 Infineon Technologies AG. All rights reserved. Page 57

Cellular Phone
ESD/EMI-Protection and RF Passive Integration
> Applications > ESD/EMI Protection

Analog IC
BGF100/BGF200 Power
BASxx/BATxx Supply
ESD5V0Sx-series

TV
USB BGF111

LCD
LCD
BGF108/BGF109 TX
BGF109L 1800/1900 BGH92
BGH182
USB
USB ESD8V0L2B-03L 850/900

Transceiver
Quadband
Camera ESD5V0Sx-series

Digital IC
PA
SIM Card BGF105/BGF106
SD
SIMCard
Card BGF110

SwitchModule
Antenna
MMC BGF104
RX
Keypad
Keypad ESD5V0Sx-series 1800/1900
850/900
I/O
I/O Data
Data ESD5V0Sx-series

HiPAC Product Portfolio ESD/EMI-Protection ESD-Protection H3-filter + Balun

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 58

Portable System
MP3 player, digital camera, camcorder…
> Applications > ESD/EMI Protection

USB LCD

Firewire
MemCard
LSI
TV In/Out

VGA Out Si-MIC

Protection diode ESDOP8RFL, ESD8VOLxx

ESD/EMI HiPACs
BGF108, BGF109, BGF109L
HiPAC for LCD
Discrete Solution*) ESD0P8RFL, ESD5V0Sx, ESD8V0Lxx

HiPAC for MMC/SD MemCard BGF104, BGF110

Discrete Solution *) ESD0P8RFL, ESD5V0Sx, ESD8V0Lxx

HiPAC for Microphone BGF100, BGF200

Discrete Solution *) ESD0P8RFL, ESD5V0Sx, ESD8V0Lxx *) w/o EMI filtering
© 2007 Infineon Technologies AG. All rights reserved. Page 59
ESD/EMI Protection for Microphone Interface
(Differential Mode/Stereo) with BGF100
> Applications > ESD/EMI Protection
VMIC (A2 or A4)
dep. on Application
VMIC
A4 A2

15 kV BGF100 2 kV
100nF
B4 B1
MICP1
VMICP
MIC 15 kV C3 A3 B2 2 kV
VMICN C4 C1
MICN1
100nF

C3 A3 B2
C2

Baseband IC

© 2007 Infineon Technologies AG. All rights reserved. Page 60

ESD/EMI Protection for Microphone Interface
(pseudo differential and/or Single-Ended Mode/Mono) with BGF200
> Applications > ESD/EMI Protection
Rpull-up,
several kȍ
VMIC
A3

15 kV BGF200
BGF200 2 kV
100nF
VMICP B1
C3 MICP1
C1
MIC MICN1
B2 B3 C2 100nF
VMICN

A2
750nF
*Optional for common
-mode suspression
Baseband IC

© 2007 Infineon Technologies AG. All rights reserved. Page 61

ESD/EMI Protection for Microphone Interface
(pseudo Single-Ended Mode) with BGF200
> Applications > ESD/EMI Protection

RCMbias,
several kȍ
VMIC
VDD A3
SMM310
15 kV BGF200
BGF200 2 kV
100nF
B1
OUT C3 MICP1
C1
MICN1
CEMC
B2 B3 C2 100nF
(30pF)
VSS

A2
SMM310 Si-Microphone with
750nF
integrated EMC-Capacitor *Optional for common
-mode suspression
Baseband IC

© 2007 Infineon Technologies AG. All rights reserved. Page 62

High Speed MMC Card ESD/EMI Protection
with BGF104
> Applications > ESD/EMI Protection

MMC Card Connector

DAT2
BGF104
For x8 HSMMC C9 DAT3
Card Only C1 VDD
C10 CMD 15 kV 2 kV CLK
C2 R*
C11 VSS1 CMD
C3
VDD DAT0
C4
CLK DAT1
C5
DAT2
C12
C6
VSS2 DAT3
C13 DAT0
C7
x4 HSMMC Card
C8
DAT1 Flash
Controller IC

* not applicabel for CLK line

© 2007 Infineon Technologies AG. All rights reserved. Page 63

SIM Card Interface Protection
with BGF105
> Applications > ESD/EMI Protection

15 kV

15 kV C2
2 kV VCC
BGF105
C1 C3
RST
CLK I/O B1 B3
CLK
RST A2 A3
I/O
VCC GND
Flash
Controller IC
SIM Card Connector B2

© 2007 Infineon Technologies AG. All rights reserved. Page 64

ESD/EMI protection for digital displays
with BGF109 for LCD, TFT applications
> Applications > ESD/EMI Protection

2 kV
LCD Source Flash
Driver 10 10 Controller IC

15 kV
PD[15:0] PD[15:0]
20
VSYNC 2 kV VSYNC
HSYNC 10 10 HSYNC
DOTCLK DOTCLK
ENABLE ENABLE

FPC 1)

1) Flexible Printed Circuitry

HiPAC BGF109

© 2007 Infineon Technologies AG. All rights reserved. Page 65

Secure Digital Card ESD/EMI Protection
BGF110
> Applications > ESD/EMI Protection

DATA1 SD Card Connector

BGF110 DATA0
C8
VSD VSS2 C7
Flash Controller IC

CMD 2 kV 15 kV CLK
R*
CLK VSD C6

DAT0 C5

DAT1 VSS1
C4
DAT2 CMD
C3
CD DATA3
C2
WP DATA2
C1
WP+CD CD C9 SD Card
DAT3_PU WP
DAT3 WP+CD
DAT3_PD

Note:
WP: Write Protection
CD: Card Detection
PU: Pull-Up
PD: Pull Down

* not applicable for CLK, DAT3, CD,

WP and WP+CD lines
© 2007 Infineon Technologies AG. All rights reserved. Page 66
ESD/EMI Protection for Digital Data Interface
with 4/7/10-Channel Diode & Low-Pass Filter
> Applications > ESD/EMI Protection

2 kV
15 kV
I/O
N Data Lines IC-Level

...
ESD Sensitive
Device

N channels

HiPAC BGF111 (1 Channel)

BGF105 (4 Channel)
BGF108 (7 Channel)
BGF109 (10 Channel)

New Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 67

General Purpose ESD & Surge Protection
with 1-5-Channel TVS Diode Arrays (upto 5V Supply Voltage)
> Applications > ESD/EMI Protection

I/O
I/O
I/O
I/O
ESD
Sensitive
Device

GND

Uni-Directional : ESD5V0S1U-03W (1-channel)

ESD5V0S2U (2-channel)
ESD5V0S5US (5-channel)
Bi-Directional: ESD8V0L1B-02LRH (1-channel)
ESD8V0L1B-03L (2-channel)

© 2007 Infineon Technologies AG. All rights reserved. Page 68

General Purpose ESD & Surge Protection
with 2-Channel TVS Diode Array (upto 24V Supply Voltage)
> Applications > ESD/EMI Protection

I/O ESD
sensitive
I/O device

ESD Diode: ESD24VS2B (2-Channel)

© 2007 Infineon Technologies AG. All rights reserved. Page 69

High-Speed ESD & Surge Protection
Designed for USB2.0, 10/100 Ethernet, Firewire, …
> Applications > ESD/EMI Protection

ESD ESD ESD

sensitive sensitive sensitive
device device device

I/O I/O I/O

I/O

CL = 8.5pF CL = 2pF CL = 4pF

ESD Diode: ESD8V0L1B-02LRH

ESD Array: ESD8V0L2B-03L

© 2007 Infineon Technologies AG. All rights reserved. Page 70

ESD, EFT & lightning protection
ADSL, ISDN, WAN or other telecom application (rail-to-rail)
> Applications > ESD/EMI Protection

ESD
sensitive
V+
device

TVS Diode Array: ESD70VU2RR-07

© 2007 Infineon Technologies AG. All rights reserved. Page 71

Automotive CAN Network
ESD-protection of CAN Bus Transceiver
> Applications > ESD/EMI Protection

- w/o external TVS: ”8kV contact

- w external TVS: >30kV contact

CAN Transceivers
CAN High
CAN
Transceiver CAN Low CAN Bus

CAN-Bus

ESD Protection ESD24VS2B

© 2007 Infineon Technologies AG. All rights reserved. Page 72

RF Antenna Port
ESD Protection of with Low-Capacitance ESD Diodes
> Applications > ESD/EMI Protection

ESD Sensitive RF Receiver Signal

RF FE Processing

ESD Protection &

ANT Matching

ESD Protection ESD0P8RFL (CL = 0.8 pF)

ESD1P0RFW (1-Channel) (CL = 1.0 nF)
ESD1P0RFS (2-Channel) (CL = 1.0 pF)

Recommended Products in RED !

© 2007 Infineon Technologies AG. All rights reserved. Page 73

Reverse Polarity Protection
Protection against reverse polarity
> Applications > ESD/EMI Protection

DC DC
+Vs GND +Vs/ GND/
GND +Vs

+Vs GND +Vs GND

DC protected circuit DC protected circuit

Prevents damage to the circuit System works with reverse polarity

Schottky Diode: BAS3005A-02V,

BAS3010S-03LRH*, BAS3010A-03W
BAS3020B*
Schottky Diode Array: BAS3007A-RPP* *New Products on request

© 2007 Infineon Technologies AG. All rights reserved. Page 74

Clipping and Clamping
Transient Voltage Suppression
> Applications > ESD/EMI Protection

After Filtering

Digital spikes
Discrete spike filter

Protection Diode: BAT17xx, BAT62xx, BAT54xx, BAT64xx,

BAT68xx, BAS40xx, BAS70xx, BAS125xx

© 2007 Infineon Technologies AG. All rights reserved. Page 75

Table of Contents

„ Applications

„ Mobile Communication

„ Consumer

„ Automotive & Industrial

„ ESD/EMI Protection

„ Lighting

© 2007 Infineon Technologies AG. All rights reserved. Page 76

Why are LED-Drivers needed?
> Applications > Lighting

Control
-Brightness Control
-LED Cluster Control
-Binning Compensation
-RGB Color Management
-Realisation of Bus-Interfaces
for Parallel Driving
Protection
-Overvoltage
-Overcurrent
-Excessive Temperature

© 2007 Infineon Technologies AG. All rights reserved. Page 77

Driving LED-Chains directly (up to 65 mA)
> Applications > Lighting

Vcc/
GND

GND or
PWM In

GND/
Vcc

Reverse Polarity Protection

* New product on request

LED-Driver: BCR401R/W/U,
BCR402R/W/U, BCR405U

Schottky Diode Array: BAS3010S-03LRH*, BAS3010A-03W

BAS3020B*

© 2007 Infineon Technologies AG. All rights reserved. Page 78

Driving LED-Chains using a Booster Transistor
(up to 500 mA)
> Applications > Lighting

Vcc/
GND

GND or
PWM In

GND/
Vcc
Reverse Polarity Protection

LED-Driver: BCR401R/W/U,
BCR402R/W/U, BCR405U

Booster Transistor: BCX55-16, BCX68-25, BC817SU

BAS3010S-03LRH*, BAS3010A-03W
Schottky Diode Array: BAS3020B*

* New product on request © 2007 Infineon Technologies AG. All rights reserved. Page 79
Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 80

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 81

RF Product Range and Target Applications
> RF Discretes > Introduction

RF Products Applications

RF Building Blocks Cellular Terminals

ƒ Low Noise Amps
ƒ 50W Driver stages
Cordless Terminals
ƒ Single chip VCOs Base Stations
ƒ gain blocks
LNB Downconverter
CATV Amplifier
RF MMIC
FM/VHF/UHF/SAT Tuner
RF Transistors
Set Top Box
RF MOSFETs
WLAN
RF PIN Diodes
Wireless Local Loop
RF Varactor Diodes
RF Schottky Diodes

© 2007 Infineon Technologies AG. All rights reserved. Page 82

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 83

RF Transistors Portfolio at a glance
> RF Discretes > RF Transistors

fT 7. Generation
SiGe:C for Ultra Low Noise Ultra Low Noise
SiGe!
fT 6. Generation BFP640, BFP640F, BFP650
SiGe for very Low Noise Amp. BFP620, BFP620F
fT 5. Generation BFP520(F), BFP540(F)
45 GHz BFP540ESD
ESD! integr. ESD 1000V*
fT
4. Generation BFP405, BFP420, BFP450
fT 25 GHz BFP405F, BFP420F

fT 4minus Gen. ESD! BFP460, BFR460L3 integr. ESD 1500V*

23 GHz DUAL BFS4XX in TSLP-6

fT
fT 3+ Generation BFR340F, BFR360F, BFR380F
15 GHz BFR3XX in TSLP-3 for VCO & RF modules
fT 3. Generation
DUAL BFS3XX in TSLP-6

fT 6 - 8 GHz ... BFR193(T) ... BF771(W), BF772 ...

BFR193L3, BFR949L3
fT 2. Generation G.P. in TSLP

5 - 6 GHz ... BFR93(T) ... BFP194, BF770A ...

fT
1. Generation
2.5 GHz ... BFS17W, BFS17P, BF799W, BF517 ... * Typ. HBM

© 2007 Infineon Technologies AG. All rights reserved. Page 84

BFP740series
… Keeping the Leadership in RF Performance
> RF Discretes > RF Transistors

Ultra Low Noise SiGe:C Present solutions for ultra low noise at 6GHz
Heterojunction Bipolar Transistor (HBT) 0.5 dB 1.0 dB 1.5 dB

NFmin at 6GHz
Performance

ƒ fT of 42 GHz
ƒ NF = 0.5 dB at 2 GHz
ƒ NF = 0.8 dB at 6 GHz
ƒ Gms = 28 dB at 1.8 GHz

Benefits & Arguments Applications (LNA)

ƒ Lowest noise figure level currently available ƒ 1.2 – 1.3GHz, 1.575GHz GPS-Systems
in the SiGe:C market
ƒ Comparable to GaAs MESFET and pHEMT ƒ 2.1 – 2.4GHz: UMTS, DECT (EU), 2.4 GHz ISM
ƒ No negative supply voltage required (unlike GaAs FETs)
ƒ High Gain & Low Current Operation ƒ 2.33 GHz, 2.6 GHz SDARS Satellite Radio (NA),
DMB

BFP740 BFP740F ƒ 5 – 6 GHz: WLAN, Cordless Phone, DSRC

BFR740L3RH
Standard

Flatlead

Leadless

ƒ 3 – 10 GHz: UWB (NA)

ƒ 12 GHz Satellite TV (Asia, EU, NA), LNB

SOT343 TSFP-4 TSLP-3
2.0 x 1.25 x 0.9mm 1.2 x 0.8 x 0.55mm 1.0 x 0.6 x 0.32mm

© 2007 Infineon Technologies AG. All rights reserved. Page 85

Infineons Ultra Low Noise SiGe:C HBTs NEW
BFR700L3RH (reduced height) Series
> RF Discretes > RF Transistors

1.0x0.6mm height 0.32mm max. 1.0x0.6mm height 0.32mm max.

Î Outstanding Performance Î Low Power Consumption Î Medium Power Device

Î Wide Range of Wireless Î Low Current Operation Î High IP3, P-1dB
Applications up to 10GHz Î High Gain Î Very Low Noise
Î High Gain Î Ultra Low Noise Î Discrete PA (driver)
Î Ultra Low Noise Î portable GPS, WLAN, UWB Î 5.8GHz Cordless Phone

BFR740L3RH BFR705L3RH BFR750L3RH

*Key Data: *Key Data: *Key Data:
Vceo = 4V, Icmax = 30mA Vceo = 4V, Icmax = 10mA Vceo = 4V, Icmax = 90mA
NF = 0.5dB at 1.8GHz, 3V, 8mA NF = 0.5dB at 1.8GHz, 3V, 3mA NF = 0.6dB at 1.8GHz, 3V, 25mA
Gms = 24 dB at 1.8GHz, 3V, 25mA Gms = 24 dB at 1.8GHz, 3V, 7mA Gms = 20 dB at 1.8GHz, 3V, 60mA
P1dB = 17dBm at 1.8GHz, 3V, 60mA
IP3 = 29dBm at 1.8GHz, 3V, 60mA

* for more details pls. check datasheet

© 2007 Infineon Technologies AG. All rights reserved. Page 86

Wideband Feedback LNA for <200 MHz up to 6 GHz
Using SiGe RF Transistor BFR740L3RH
> RF Discretes > RF Transistors

Applications

ƒ 315, 433 MHz: Remote Keyless Entry

ƒ 900 MHz: Cellular, 900 MHz ISM, etc.

ƒ 1575 MHz: GPS

ƒ 2400 MHz: 2.4 GHz ISM, WLAN, etc.

ƒ 5150 MHz: IEEE802.11a WLAN

Features

ƒ The complete amplifier only uses 16mm² of PCB area

ƒ A simple, low-cost general-purpose wideband LNA
application
ƒ Gain of 19.8-10.0 dB @ 315-5100 MHz
ƒ Noise Figure of 1.1 – 1.5 dB @ 315-5100 MHz

BFR740L3RH
Leadless NEW

TSLP-3
1.0 x 0.6 x 0.32mm

© 2007 Infineon Technologies AG. All rights reserved. Page 87

LNA for 1575 MHz GPS (Global Positioning System)
Using the SiGe Transistor BFP740F in TSFP-4 Package
> RF Discretes > RF Transistors

Applications

ƒ 1575.42 MHz GPS LNA

Overview

ƒ Gain of 19.8 dB @ 1575 MHz

ƒ Noise Figure of 0.67 dB @ 1575 MHz
ƒ Input P1dB of -18.0 dBm @ 1575 MHz
ƒ Output P1dB of +0.8 dBm @ 1575 MHz
ƒ Input 3rd Order Intercept of -1.7 dBm @ 1575 MHz
ƒ Current < 8.2 mA from a 3.0 Volt power supply
ƒ Input / Output Return Loss 10 dB or better

© 2007 Infineon Technologies AG. All rights reserved. Page 88

Narrowband 5 to 6 GHz (IEEE802.11a WLAN) LNA
Using SiGe RF Transistor BFP740F
> RF Discretes > RF Transistors

Applications

ƒ 5 to 6 GHz (IEEE802.11a WLAN) LNA

Excellent Results

ƒ NF ~ 1.1 dB on PCB @ 5 to 6 GHz

substantial improvement over BFP640
… and better than GaAs pHEMT
ƒ Application Board on request

NF ~ 1.1 dB

BFP740F
Flatlead

TSFP-4
1.2 x 0.8 x 0.55mm

© 2007 Infineon Technologies AG. All rights reserved. Page 89

SiGe RF Transistors
BFP600 Family
> RF Discretes > RF Transistors

ƒ 70 GHz fT - Silicon Germanium technology

ƒ Gold metallization for extra high reliability

BFP640/F BFP640, 650 BFP650

Standard
SOT343
2.0 x 1.25 x 0.9mm ƒ For medium power
ƒ For a wide range of
amplifiers
wireless applications
ƒ Ideal for low phase noise
ƒ Ideal for LNB, CDMA and
oscillators
WLAN applications
ƒ Output compression point
ƒ High gain, low noise RF SiGe! P-1dB = 18 dBm at 1.8 GHz
transistor
ƒ Max. available Gain
ƒ Provides outstanding
Gma = 21 dB at 1.8 GHz
performance
ƒ Noise figure
ƒ High maximum stable gain
BFP640F NF = 0.8 dB at 1.8 GHz
Gms = 24 dB at 1.8 GHz
Flatlead

ƒ Outstanding noise figure

NF = 0.65 dB at 1.8 GHz
NF = 1.4 dB at 6 GHz
TSFP-4
1.2 x 0.8 x 0.55mm

© 2007 Infineon Technologies AG. All rights reserved. Page 90

Low-Current LNA for 1575 MHz GPS Applications
Using the SiGe BFP640 Transistor
> RF Discretes > RF Transistors

Applications

ƒ 1575.42 MHz GPS LNA

Overview

ƒ Gain of 15.2 dB@ 1575 MHz

ƒ Noise Figure of 0.95 dB @ 1575 MHz

ƒ Input P1dB of -18.7 dBm @ 1575 MHz

ƒ Output P1dB of -4.5 dBm @ 1575 MHz

ƒ Input 3rd Order Intercept of -1.1 dBm @ 1575 MHz

ƒ Current of 4.9 mA from a 3.0 Volt power supply

ƒ Input/Output Return Loss better than 10 dB

© 2007 Infineon Technologies AG. All rights reserved. Page 91

LNA for 2.3 – 2.5 GHz ISM Band Applications
Using the SiGe Transistor BFP640
> RF Discretes > RF Transistors

Applications

ƒ 2.3 GHz SDARS, 2.4 GHz (Bluetooth, WLAN, other

2.4 GHz ISM applications)

Overview

ƒ Gain = 15.5 dB @ 2400 MHz

ƒ Noise Figure ~ 0.96 dB @ 2400 MHz

ƒ Input P1dB of -11.3 dBm @ 2400 MHz

ƒ Output P1dB +3.2 dBm @ 2400 MHz

ƒ Input 3rd Order Intercept +11.6 dBm @ 2400 MHz

ƒ Current of 6.7 mA from a 3.0 Volt power supply

© 2007 Infineon Technologies AG. All rights reserved. Page 92

LNA for Satellite DMB (Digital Multimedia Broadcasting)
Using the BFP640 Transistor
> RF Discretes > RF Transistors

Applications

ƒ 2630 – 2655 MHz Digital Multimedia Broadcasting

Overview

ƒ Gain = 14.8 dB@ 2642.5 MHz

ƒ Noise Figure of 1.0 dB @ 2642.5 MHz

ƒ Input P1dB of -11.6 dBm @ 2642.5 MHz

ƒ Output P1dB of + 2.2 dBm @ 2642.5 MHz

ƒ Input 3rd Order Intercept of +8.7 dBm @ 2642.5 MHz

ƒ Current of 5.8mA from a 3.3 Volt power supply

© 2007 Infineon Technologies AG. All rights reserved. Page 93

Two-Stage LNA for 5 to 6 GHz (IEEE802.11a WLAN)
Using SiGe Transistor BFP640
> RF Discretes > RF Transistors

Applications

ƒ Frequency Range 5 to 6 GHz

Overview

ƒ Low Cost Solution

ƒ Results achieved on FR4

ƒ Supply Voltage 3.3V

ƒ DC Current 16,2 mA

ƒ Gain 22.3 dB @5350 MHz

20.4 dB @5825 MHz

ƒ Noise Figure 1.54 dB @5350 MHz

1.62 dB @5825 MHz
BFP640 BFP640 ƒInput P1dB -14.8 dBm @5825 MHz
1st stage 2nd stage

© 2007 Infineon Technologies AG. All rights reserved. Page 94

Two-Stage LNA for 5 to 6 GHz (IEEE802.11a WLAN)
Using SiGe Transistor BFP640 – reduced ext. components
> RF Discretes > RF Transistors

Applications

ƒ Frequency Range 5 to 6 GHz

Overview

ƒ Low Cost Solution

ƒ only 7 passive (3xC, 3xR, 1xL)

ƒ Results achieved on FR4

ƒ Total PCB area 40mm²
ƒ Supply Voltage 3V
ƒ DC Current 9 mA
ƒ Gain (can be increased by Ic)
ƒ10.1 dB @5500 MHz
ƒ Noise Figure 1.4 dB @5500 MHz

© 2007 Infineon Technologies AG. All rights reserved. Page 95

8 – 9 GHz fT G.P. RF Transistors in TSLP-3-1
> RF Discretes > RF Transistors

ƒ Bipolar 8 and 9 GHz Silicon technology in Leadless Packages

ƒ Ideal for General Purpose RF Applications e.g. LNAs, Oscillators and VCO Modules

BFR949L3 BFR193L3

ƒ Ideal for Low Noise and High Gain Boradband ƒ For low noise, high-gain amplifiers up to 2 GHz
Amplifiers at Collector Currents from 1mA to ƒ For linear broadband amplifiers
20mA ƒ Transition Frequency of 8 GHz
ƒ Transition Frequency of 9GHz ƒ NF of 1.2 dB at 900 MHz
ƒ NF of 1.0dB at 1GHz

ƒ VCE0=10V, IC=35mA ƒ VCE0=12V, IC=80mA

Footprint 1.0 x 0.6 x 0.4mm only!

© 2007 Infineon Technologies AG. All rights reserved. Page 96

14GHz RF Transistors
> RF Discretes > RF Transistors

ƒ Bipolar 14 GHz Silicon technology in Flatlead and Leadless Packages

ƒ Ideal for Low Phase Noise Oscillators and VCOs

BFR340F/L3 BFR360F/L3 BFR380F/L3

ƒ Ideal for Low Current and ƒ For Low Voltage / Low ƒ High Current Capability and
Amplifiers and Oscillators Current Applications Low Noise Figure for Wide
ƒ High Transition ƒ For Oscillators up to Dynamic Range
Frequency of 14GHz 3.5GHz and Pout > Applications
ƒ High Insertion Gain 10dBm ƒ Ideal for Low Phase Noise
ƒ Low Voltage/ Low Current ƒ For Low Noise Amplifiers Oscillators up to 3.5GHz
Operation ƒ Low Noise Figure: 1.0 dB ƒ Low Voltage Operation
at 1.8 GHz ƒ Low Noise Figure: 1.1dB
ƒ VCE0=6V, IC=10mA at 1.8GHz
ƒ VCE0=6V, IC=35mA
ƒ VCE0=6V, IC=80mA

TSFP-3 TSLP-3
Package Package
BFRxxxF BFRxxxL3

Footprint 1.0 x 0.6 x 0.4mm only!

© 2007 Infineon Technologies AG. All rights reserved. Page 97
14GHz fT Twin RF Transistors in TSLP-6
VCO and RF Modules
> RF Discretes > RF Transistors

ƒ TWIN Type 14GHz Low Phase Noise RF-Transistors in Ideal for Oscillators and VCOs Modules
ƒ Two built in Transitors in 6pin Thin Small Leadless Package TSLP-6

3
0L
0L3 0L3 3 8
6 8 FR
FR3 F R3 + B
BFS380L6 BFS386L6
xB BFS360L6 xB L3
2 2
360
R
BF
ƒ High Current Capability and
ƒ For Low Voltage / Low ƒ For Low Voltage / Low
Low Noise Figure for Wide
Current Applications Current Applications
Dynamic Range Applications
ƒ For Oscillators up to ƒ For Oscillators up to
ƒ Ideal for Low Phase Noise
3.5GHz and Pout > 10dBm 3.5GHz and Pout > 10dBm
Oscillators up to 3.5GHz
ƒ For Low Noise Amplifiers ƒ Low Noise Amplifiers
ƒ Low Voltage Operation
ƒ Low Noise Figure TR1 and ƒ TR1 NF = 1.0dB at 1.8GHz
ƒ Low Noise Figure TR1 and
TR2 of 1.0 dB at 1.8GHz ƒ TR2 NF = 1.1dB at 1.8GHz
TR2 of 1.1dB at 1.8GHz

TSLP-6-1
Package Footprint 1.2 x 0.8 x 0.4mm only!

© 2007 Infineon Technologies AG. All rights reserved. Page 98

23GHz fT Single & Twin RF Transistors in TSLP
VCO and RF Modules
> RF Discretes > RF Transistors

ƒ SINGLE and TWIN Type 23GHz Low Phase Noise RF-Transistors in Ideal for Oscillators and VCOs Modules
ƒ High gain (~17dB@1.8GHz), low noise (~1.1dB @1.8GHz)
ƒ 6-Pin Thin Small Leadless Package TSLP-6

Transistor Package fT VCE0 ICmax Gms NF

SINGLE [GHz] [V] [mA] [dB] [dB]
*BFR460L3 TSLP-3-1 23 4,5 35 17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA

TWIN
BFS460L6 T1 (*BFR460) TSLP-6-1 (1208) 23 4,5 35 17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
T2 (*BFR460) 23 4,5 35 17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA

BFS466L6 T1 (*BFR460) TSLP-6-1 (1208) 23 4,5 35 17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
T2 (BFR360) 14 6 35 15,5 at 1.8GHz, 3V,20mA 1 at 1.8GHz, 3V,20mA

BFS469L6 T1 (*BFR460) TSLP-6-1 (1208) 23 4,5 35 17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
T2 (BFR949) 9 10 35 14 at 1.8GHz, 8V,10mA 1,5 at 1.8GHz, 8V,3mA

*ESD Performance Typ. 1500V HBM

P
in M

TSLP-3-1 (1006) TSLP-6-1 (1208 B5)

© 2007 Infineon Technologies AG. All rights reserved. Page 99
BFP460, BFP540ESD
„EHRT“ ESD-Hardened RF Transistor
> RF Discretes > RF Transistors

W
NE

„ Excellent general-purpose RF transistor from VHF to 2.5 GHz

„ Survive 1500V, *1000V Electro-Static Discharge Pulses (Human Body Model) between any pair of terminals
„ Unmatched combination of ESD-Robustness and RF performance
„ Industry-standard SOT343 package

© 2007 Infineon Technologies AG. All rights reserved. Page 100

RF Remote Systems (ISM Based)
ESD Hardened RF-Transistors BFP460, BFP540ESD
> RF Discretes > RF Transistors
„ Target Application:
Industrial Security an ISM based RF
Systems (315/433/868MHz) e.g.
RF IC „ RF Remote
On/Off Power Sockets

SAW „ RF Remote
BFP460 Garage Door Opener
„ RF Security / Alarm
BFP460,BFP540ESD „ Product features & USP:
„ LNA Boost significantly the sensitivity of RKE ICs Unmatched combination of RF Performance
„ Easy Set-Up – No SMD Coils Required with integrated ESD Protection up to 1.5kV
(HBM)
„ Low Current Operation – Extend Battery Life
„ Application Kit/Note No.084 available „ Market Driver:
Convenience and reliability
„ Customer expectations:
ESD protection, RF Performance, Low Cost,
high Quality
Low current, only 3mA

„ IFX product strategy

Extended Antenna Range in package with
IFX RKE ICs (TDA52xx)

1.5kV 1kV

© 2007 Infineon Technologies AG. All rights reserved. Page 101

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 102

Si MMICs and RF Transistors
Difference in Applications
> RF Discretes > RF MMICs

MMIC

ƒ Application Specific ƒ Universal Application

ƒ Often: bias point fixed ƒ Broadband f = DC ... 10 GHz
ƒ Narrow Band f = 1.8 ... 6 GHz ƒ Best Gain & NF
ƒ Easiest Circuit & Board Design ƒ Higher Parts Count
ƒ Low Parts Count

© 2007 Infineon Technologies AG. All rights reserved. Page 103

Si MMICs – Why ?
Integrated Functions in one Package
> RF Discretes > RF MMICs
Multiple-Stage LNA in one

Vcc

Active
VCTRL Biasing
Circuit
Input Output
Matching Matching Multiple-Gain-Stage LNA in one
LNA
high gain

through

mid gain

low gain
Basic LNA circuit off
The function blocks include:
ƒ active biasing circuit with bandgap
ƒ input-/output matching
ƒ multiple stage/band/gain stage LNA Multiple-Band LNAs in one
ƒ ESD protection circuit Band 1
ƒ Bipolar Logic
Band 2
ƒ balun for mode conversion

…
ƒ Linearity improvement circuit Band n
ƒ booster circuit
Æ Customer Benefit: shorter R&D time & cost down

© 2007 Infineon Technologies AG. All rights reserved. Page 104

BGA615L7
GPS (1.575GHz) and L-Band SiGe LNA
> RF Discretes > RF MMICs

Features
ƒ High Gain 18 dB
ƒ Low Noise Figure 0.9 dB
ƒ Off-mode
ƒ 1KV ESD Protection
ƒ Output 50 ȍ matched
ƒ Low Parts Count
TSLP-7-1

Vcc = 2.8V, frequency = 1.575GHz

Symbol Parameter Unit Value

2
IS21I Insertion Power Gain dB 18
NF Noise Figure dB 0.9
OP1dB Output Compression Point dBm 6
OIP3 Output Third Order Intercept Point dBm 17
Id Total Device Current mA 6

© 2007 Infineon Technologies AG. All rights reserved. Page 105

BGA622L7
Universal SiGe LNA
> RF Discretes > RF MMICs

Applications
ƒ UMTS / CDMA
ƒ GSM / TDMA / EDGE
ƒ GPS / ISM
ƒ Bluetooth Now ESD-Proof.
ƒ DVB-T/DVB-H 2KV acc. to HBM

Features
ƒ 1.1dB Noise Figure @1.575 GHz
ƒ On-Off Switch TSLP-7-1
ƒ 50 matched @ > 2 GHz
ƒ Low Parts Count

Vcc = 2.7V, frequency = 1.575GHz

Symbol Parameter Unit Value

2
IS21I Insertion Power Gain dB 17.5
NF Noise Figure dB 1.1
OP1dB Output Compression Point dBm -1
IP3 out Output Third Order Intercept Point dBm 17
Id Total Device Current mA 5.8

© 2007 Infineon Technologies AG. All rights reserved. Page 106

BGA622
Universal SiGe LNA
> RF Discretes > RF MMICs

Applications
ƒ UMTS / CDMA
ƒ GSM / TDMA / EDGE
ƒ GPS / ISM
ƒ Bluetooth Now ESD-Proof.
ƒ DVB-T/DVB-H 2KV acc. to HBM

Features
ƒ 1.1 dB Noise Figure @2.1 GHz
ƒ On-Off Switch See App Note 069 for GPS!
ƒ 50 matched @ > 2 GHz
ƒ Low Parts Count

Vcc = 2.7V, frequency = 2.14GHz

Symbol Parameter Unit Value

2
IS21I Insertion Power Gain dB 13.3
NF Noise Figure dB 1.1
P1dB Output Compression Point dBm 0
IP3 out Third Order Intercept Point dBm 18
Id Total Device Current mA 5.8

© 2007 Infineon Technologies AG. All rights reserved. Page 107

BGA428
GSM and GPS LNA
> RF Discretes > RF MMICs

Features and Benefits

ƒ For GSM 900/1800/1900 & GPS
ƒ Low NF and high gain
ƒ 50 matched input & output
ƒ Reduced component count
ƒ SOT363 package

Vcc =2.7V, frequency = 1.8GHz

Symbol Parameter Unit Value

Gma Power Gain dB 20

NF Noise Figure dB 1.4
P1dB Input Compression Point dBm -19
IIP3 Input Third Order Intercept Point dBm -9
Id Total Device Current mA 8,2

© 2007 Infineon Technologies AG. All rights reserved. Page 108

BGA700L16, Dual Band WLAN LNA
> RF Discretes > RF MMICs

Bare Die Sales Code:T1515

Package Sales Code:BGA700L16

ON_52
VCC2

LNA_

N.C.
N.C. RF_IN_52.
2.4 GHz, Vcc=3.2V, T=25°C
RF_OUT_52 GND_RF_24
Gain 15 dB
N.C. N.C.
Noise Figure 0.9 dB

RF_OUT_24 GND_RF_52
IP-1dB -10 dB

N.C. RF_IN_24
5.5 GHz, Vcc=3.2V, T=25°C
N.C.
ON_24.
LNA_
VCC1.

Gain 21 dB

P. Size: 2.3 x 2.3 x 0.39 mm3 Noise Figure 1.3 dB

IP-1dB -10 dB

© 2007 Infineon Technologies AG. All rights reserved. Page 109

BGA612, BGA614, BGA616
SiGe Broadband Amplifier / DC ... 5GHz, 50 matched
> RF Discretes > RF MMICs

Applications
ƒ Supply Voltage > 3 V
ƒ Driver Amp for
343

Power Gain
T GSM / EDGE / CDMA
SO
ƒ SAT LNB IF amplifiers
ƒ CATV Amplifiers
ƒ ISM and Bluetooth

Application support see ƒ Cellular Base Stations

application note 067 ! ƒ DVB-T Amplifier

BGA614
Type Maximum Ratings Characteristics Conditions

Output 3rd Order

Power Output
Device Device 3dB Noise for 1 dB Intercept Bias Supply
2
Volage Current bandwidth Gain lS21l Figure compression point Frequency Current Voltage
[V] [mA] [GHz] [dB] [dB] [dBm] [dBm] [GHz] [mA] [V]

BGA 612 2.8 80 2.8 15.8 2.35 7 17 2 20 2.3

BGA 614 3.0 80 2.4 17 2.3 12 25 2 40 2.5
BGA 616 4.5 80 2.7 17.5 2.9 18 29 2 60 4.1

© 2007 Infineon Technologies AG. All rights reserved. Page 110

BGA420
Broadband LNA-MMIC in SIEGET®25 Technology
> RF Discretes > RF MMICs

4,VD
Features
ƒ High Performance:
ƒ Gain=13 dB *
3,Out ƒ NF=2.2 dB *
ƒ Reverse isolation > 28 dB *
ƒ OIP3 = +10 dBm *
1,IN
ƒ Input/output matched
* data @ 3 V, 6.4 mA ; 1800 MHz

2,Ground SOT343 Benefits

ƒ SOT343
ƒ Easy to design in

Gain [dB]
25

20

15

10
5

0.1 0.2 0.5 0.8 1.0 3.0 10

Freq [GHz]

© 2007 Infineon Technologies AG. All rights reserved. Page 111

BGA427
Broadband LNA-MMIC in SIEGET®25 Technology
> RF Discretes > RF MMICs

Features
3,VD ƒ High Performance
ƒ Gain=22 dB *
ƒ NF=2.2 dB *
4,Out
ƒ Reverse isolation > 35 dB *
ƒ IP3output = +7 dBm *
1,IN
ƒ Input/output matched
* data @ 3 V, 6.4 mA ; 1800 MHz
2,Ground
SOT343 Benefits
ƒ SOT343
ƒ Easy to design in

Gain [dB]
25

20

15

10
5

0.1 0.2 0.5 0.8 1.0 3.0 10

Freq [GHz]

© 2007 Infineon Technologies AG. All rights reserved. Page 112

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 113

RF Diodes Packages and Configurations
> RF Discretes > RF Diodes

SC79 SCD80 SOD323 TSLP-2/RH TSSLP

-02V -02W C A
-03W -02L/RH -02LS

A
SOT23 SOT323 TSLP-3/RH
C
-04 -04W C -03L/RH

A A
SOT23 SOT323 TSLP-4
-05 -05W C C -07L

A C
TSLP-4
SOT23 SOT323 C A -099L
-06 -06W
C A
TSLP-4
A C -098L
SOT143 SOT343
-07 -07W

Example
SOT363 SOT143
BAR63-03W
-08S -099
Single Diode in
SOD323
BAR63-04W
SOT363 SOT143 Double Diode, seriell
-04S -099R configuration in
SOT323

© 2007 Infineon Technologies AG. All rights reserved. Page 114

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 115

PIN Diodes Applications & Key Parameters
> RF Discretes > RF PIN Diodes

Band switching PIN Diodes Antenna switching

in TV / SAT tuners in RF Frontends

RF attenuator Surge Protection

trr Charge carrier lifetime Switching time

rf Forward resistance Low for low insertion loss
CT Diode capacitance Small for high isolation

© 2007 Infineon Technologies AG. All rights reserved. Page 116

Diode packages for smallest size
> RF Discretes > RF PIN Diodes

20% height reduction

70% footprint reduction
TSLP-4-4
20% height reduction
TSLP-2-1

TSLP
TSLP-2/3/4
TSLP-RH
Package Height
TSLP-2/3/4-RH
0.50 mm max.
1.0 x 0.6 x 0.4 mm /
Reduced Height TSSLP
1.2 x 0.8 x 0.4 mm
0.40 mm max. TSSLP-2
1.0 x 0.6 x 0.39 mm / Package Height
1.2 x 0.8 x 0.39 mm 0.32 mm max.
0.6 x 0.3 x 0.31 mm

2003 2004 2005

© 2007 Infineon Technologies AG. All rights reserved. Page 117
PIN Diodes for Antenna Switches @ 900MHz
> RF Discretes > RF PIN Diodes

Insertion loss Series configuration, ZL= 50

BAR 50-02V/L
(@ 900 MHz ) IF= 10 mA, VR= 0 V Ins.loss 0.27 dB @ 10 mA
Isolation 24.5 dB @ 0V

0.20 dB

BAR 64-02V/LRH
Ins. loss 0.16 dB @ 10 mA
0.15 dB Isolation 22 dB @ 0V

BAR 89-02LRH
0.10 dB BAR 63-02V/L Ins.loss 0.08 dB@10mA
Isolation 19 dB@0V
Ins.loss 0.10 dB@10mA
Isolation 17.9 dB@ 0V
BAR 90-02LRH/LS
Ins.loss 0.08 dB@10mA
0.05 dB BAR 65-02V/L BAR 88-02V/LRH Isolation 19 dB@0V
Ins. loss 0.05 dB@ 10mA Ins.loss 0.06 dB@10mA BAR90: improved
Isolation 12 dB@ 0V Isolation 15.5 dB@0V insertion loss
towards lower
current
12 dB 14 dB 16 dB 18 dB 20 dB 22 dB
Isolation ( @ 900 MHz )
© 2007 Infineon Technologies AG. All rights reserved. Page 118
PIN Diodes for Antenna Switches @1800MHz
> RF Discretes > RF PIN Diodes

Insertion loss Series configuration, ZL= 50Ohm

BAR50-02V/L
(@ 1800 MHz ) IF= 5 mA, VR= 0V Ins.loss 0.4 dB @ 5 mA
Isolation 20 dB @ 0V

BAR 64-02V/LRH
0,20 dB Ins. loss 0.23 dB @ 5 mA
Isolation 17 dB @ 0V

0,15 dB
BAR 63-02V/L
Ins.loss 0.11 dB@5mA
Isolation 12 dB@ 0V BAR 89-02LRH
Ins.loss 0.10 dB@5mA
0,10 dB Isolation 14 dB@0V

BAR 90-02LRH/LS
Ins.loss 0.10 dB@5mA
Isolation 13,5 dB@0V
0,05 dB BAR 88-02V/LRH
BAR 65-02V/L Ins.loss 0.07 dB@5mA BAR90: improved
Isolation 11 dB@0V insertion loss
Ins. loss 0.06 dB@ 5mA
towards lower
Isolation 7 dB@ 0V
current

8dB 10dB 12dB 14dB 16dB 20dB

Isolation ( @ 1800 MHz )
© 2007 Infineon Technologies AG. All rights reserved. Page 119
Dual PIN Diodes for Antenna Switches
in TSLP-4 @ 900MHz
> RF Discretes > RF PIN Diodes

Insertion loss Series configuration, ZL=50Ohm

(@ 900 MHz ) IF= 10mA, VR= 0V

0,10 dB

BAR 90-07LRH/
0,075 dB -098LRH/099LRH
Ins.loss 0.07 dB@1 0mA
Isolation 19 dB@0V

BAR 88-07LRH/
BAR 65-07 L
0,05 dB Ins. loss 0.05 dB@ 10mA 099LRH
Isolation 12 dB@ 0V Ins.loss 0.05 dB@10mA
Isolation 15,5 dB@0V

0,025 dB

12 dB 14 dB 16 dB 18 dB 20 dB 22 dB

Isolation ( @ 900 MHz )

© 2007 Infineon Technologies AG. All rights reserved. Page 120

Diodes in TSLP-4 Package
> RF Discretes > RF PIN Diodes

Dual Diodes in parallel and anti-parallel configuration

Advantage for customer:

40% footprint reduction compared to 2 single diodes

PIN Diodes Schottky Diodes PIN Diodes Schottky Diodes

BAR88-07LRH BAT15-07LRH BAR88-098LRH BAT15-098LRH
BAR90-07LRH BAT62-07L4 BAR88-099LRH BAT15-099LRH
BAR90-098LRH
BAR90-099LRH

-07L -099L -098L

TSLP-4/TSLP-4-RH
1,2x0,8x0,5/0,4mm

© 2007 Infineon Technologies AG. All rights reserved. Page 121

PIN Diodes Harmonic Distortion Values
> RF Discretes > RF PIN Diodes

2nd / 3rd Harmonics (dBc), typical values

Type 35 dBm, 900 MHz, 50 Ohm, single diode in series configuration
IF= 1 mA IF= 3 mA IF= 6 mA IF= 10 mA
BA 892-... 60 / 60 - 80 / >95 80 / >95
BAR 50-... na *) - 70 / 75 75 / 90
BAR 63-... na *) - 70 / 75 75 / 85
BAR 64-... na *) - 75 / 90 80 / >95
BAR 65-... 40 / 40 - 75 / 90 80 / >95
BAR 67-... 30 / 30 - 75 / 90 80 / >95
BAR 88-... 70 / 75 80 / 85 80 / >95 85 / >95
BAR 89-... 40 / 40 65 / 70 80 / 90 85 / >95
BAR 90-... 65 / 65 75 / 85 85 / >95 85 / >95

* Not applicable, restricted by max. power dissipation of diode

Noise floor of used test setup: 95 dBc

© 2007 Infineon Technologies AG. All rights reserved. Page 122

Harmonic Distortion BAR88 / 89 / 90 series
> RF Discretes > RF PIN Diodes

Switching PIN diode BAR88 / BAR89 / BAR90 series

2nd Harmonic distortion performance

Test conditions: Pin= 35 dBm (ON mode) / 0 dBm (OFF mode), fo= 900 MHz, Z= 50 Ohm

-20

OFF mode ON mode

-30
2nd Harmonic distortion (dBc)

-40

-50 BAR88-02L
BAR89-02L
-60 BAR90-02L

-70

-80

-90
VR= 0 V IF= 1 mA IF= 2 mA IF= 3 mA IF= 4 mA IF= 5 mA IF= 6 mA IF=8mA IF=10mA
Bias conditions

BAR90 with balanced harmonic performance in ‚On‘ and ‚Off‘ modes!

© 2007 Infineon Technologies AG. All rights reserved. Page 123

PIN Diodes Line Up for FM and TV Tuners
> RF Discretes > RF PIN Diodes

Key Features
ƒ Very low capacitance and forward resistance values to guarantee:
ƒ Low harmonic for band-switching and antenna-switching applications
ƒ Low distortion factor for RF attenuation applications
ƒ Long-term stability of electrical characteristics

Type package Ct@1V rf@10mA Trr Appl.

BA592 SOD323
BA892 SCD80 Band
0.92 pF 0.36 Ohm 120 ns
BA892-02V SC79 switching

BA892-02L TSLP2
BA595 SOD323
RF
BA885 SOT23 0.35 pF 4.5 Ohm 1.6 us
attenuation
BA895 SCD80
BAR14-1, BAR15-1, BAR16-1 (Dual) SOT23 0.50 pF 7.0 Ohm 1.0 us RF attenuation
BAR50-02V SC79 0.24 pF 3.0 Ohm 1.1 us RF attenuation
BAR61 (Triple) SOT143 0.25 pF 7.0 Ohm 1.0 us RF attenuation

© 2007 Infineon Technologies AG. All rights reserved. Page 124

PIN Diodes Line up
> RF Discretes > RF PIN Diodes

Type package Ct @ 1V rF @ 10mA trr ) Application

BA592 SOD323 0.92 pF 0.36 Ohm 120 ns Bd-Sw
BA892 SCD80 0.92 pF 0.36 Ohm 120 ns Bd-Sw
BA892-02V SC79 0.92 pF 0.36 Ohm 120 ns Bd-Sw
BA892-02L TSLP2 0.92 pF 0.36 Ohm 120 ns Bd-Sw
BA595 SOD323 0.35pF 4.5 Ohm 1.6 µs RF-att
BA885 SOT23 0.35pF 4.5 Ohm 1.6 µs RF-att
BA895 SCD80 0.35pF 4.5 Ohm 1.6µs RF-att
BAR14-1,15-1,16-1 (D) SOT23 0.50 pF 7.0 Ohm 1.0 µs RF-att
BAR50-02V SC79 0.24 pF 3.0 Ohm 1.1 µs Ant.-sw
BAR50-02L TSLP2 0.24 pF 3.0 Ohm 1.1 µs Ant.-sw
BAR63-03W SOD323 0.23 pF 1.0 Ohm 75 ns Ant.-sw
BAR63-02W SCD80 0.23 pF 1.0 Ohm 75 ns Ant.-sw
BAR63-02V SC79 0.23 pF 1.0 Ohm 75 ns Ant.-sw
BAR63-02L TSLP2 0.23 pF 1.0 Ohm 75 ns Ant.-sw
BAR63-04/05/06 (D) SOT23 0.23 pF 1.0 Ohm 75 ns Ant.-sw
BAR63-04W/05W/06W (D) SOT323 0.23 pF 1.0 Ohm 75 ns Ant.-sw
BAR64-03W SOD323 0.45 pF 2.1 Ohm 1.55 µs Ant.-sw
BAR64-02V SC79 0.45 pF 2.1 Ohm 1.55 µs Ant.-sw
BAR64-02LRH TSLP2-RH 0.45 pF 2.1 Ohm 1.55 µs Ant.-sw
BAR64-04/05/06/07 (D) SOT323 0.45 pF 2.1 Ohm 1.55 µs Ant.-sw
BAR64-04W/05W/06W (D) SOT323 0.45 pF 2.1 Ohm 1.55 µs Ant.-sw
BAR65-03W SOD323 0.45 pF 0.6 Ohm 80 ns Ant.-sw
BAR65-02L TSLP2 0.45 pF 0.6 Ohm 80 ns Ant.-sw
BAR65-02V SC79 0.45 pF 0.6 Ohm 80 ns Ant.-sw
BAR66 SOT23 0.45 pF 1.0 Ohm 700 ns surge
BAR67-02V SC79 0.40 pF 1.0 Ohm 700 ns surge
BAR61 SOT143 0.50 pF 7.0 Ohm 1.0 µs RF-att
BAR88-02V SC79 0.3 pF 0.6 Ohm 0.5 µs Ant.-sw
BAR88-02LRH,-07LRH,-098LRH,099LRH TSLP2-RH, TSLP4-RH 0.3 pF 0.6 Ohm 0.5 µs Ant.-sw
BAR89-02LRH TSLP2-RH 0.25 pF 0.8 Ohm 0.8 µs Ant.-sw
BAR90-02LS TSSLP2 0.25 pF 0.8 Ohm 0.75µs Ant.-sw
BAR90-02LRH,-07LRH,-099LRH TSLP2-RH, TSLP4-RH 0.25 pF 0.8 Ohm 0.75µs Ant.-sw

© 2007 Infineon Technologies AG. All rights reserved. Page 125

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 126

Varactor Diodes Applications & Key Parameters
> RF Discretes > RF Varactor Diodes

Tuned Filter Varactor Diodes UHF / VHF Tuner

SAT Tuner

VCO Application FM Tuner

CVmin/CVmax Capacitance ratio Indicates tuning range

rs Series resistance Influence on phase noise
Indicates Q factor

© 2007 Infineon Technologies AG. All rights reserved. Page 127

Varactor Diodes Product Portfolio
> RF Discretes > RF Varactor Diodes

VCO and Low Voltage Tuner

5 GHz

WLAN

Tuner
3 GHz

BBY5x-series BB831, BB833, BB837,

Bluetooth BBY6x- series BB857
Cellular
Satellite BB535, BB545, BB555/-
1 GHz

GSM 02V, BB565/-02V

UHF BB639, BB639C, BB659, BB659C/-

Cordless Phones 02V, BB644, BB664/-02V, BB689/-
300 MHz

VHF 02V, BB640

BB804, BB814, BB914, BB844

FM

1.8 V 4V 10 V 28 V

© 2007 Infineon Technologies AG. All rights reserved. Page 128

Varactor Diodes Line Up for VCOs
> RF Discretes > RF Varactor Diodes

Type Package C@1V Cap-ratio rs ( Ohm )

BBY51-03W, 02W, 02L SOD323, SCD80, TSLP2 5.4pF 1.75 (1V/3V) 0.37
BBY51 SOT23 5.4pF 1.75 (1V/3V) 0.37 Double
BBY52-02W, 02L SCD80, TSLP2 1.9pF 1.6 (1V/4V) 0.9
BBY53-03W,02W, 02V SOD323, SCD80, SC79 5.3pF 2.2 (1V/3V) 0.47
BBY53, -05W SOT23, SOT323 5.3pF 2.2 (1V/3V) 0.47 Double
BBY53-02L, 03LRH TSLP2, TSLP3-RH 5.3pF 2.2 (1V/3V) 0.47
BBY55-02W,02V SCD80,SC79 18.6pF 2.5 (2V/10V) 0.15
BBY55-03W SOD323 18.6pF 2.5 (2V/10V) 0.15
BBY56-02W SCD80 40pF 2.6 (1V/3V) 0.25
BBY56-03W SOD323 40pF 2.6 (1V/3V) 0.25
BBY57-02W,02V SCD80,SC79 17.5pF 2.45 (1V/3V) 0.3
BBY57-02L TSLP2 17.5pF 2.45 (1V/3V) 0.35
BBY57-05W SOT323 17.5pF 2.45 (1V/3V) 0.3 Double
BBY58-03W, 02W,02V SOD323, SCD80, SC79 18.3pF 3.05 (1V/4V) 0.25
BBY58-02L TSLP2 18.3pF 3.05 (1V/4V) 0.3
BBY58-05W, 06W SOT323 18.3pF 3.05 (1V/4V) 0.25 Double
BBY59-02V SC79 28pF 4 (1V/4V) 0.45
BBY65-02V SC79 20pF 4.55 (1V/3V) 0.6
BBY66-02V SC79 70pF 5.5 (1V/4,5V) 0.25
BBY66-05, 05W SOT23, SOT323 70pF 5.5 (1V/4,5V) 0.25 Double

© 2007 Infineon Technologies AG. All rights reserved. Page 129

Varactor Diodes Product Overview
for FM/TV/SAT Tuner
> RF Discretes > RF Varactor Diodes

Type package C@2V C8/C2 rs Appl.

BB804 (Dual) SOT23 45pF 1.7 0.2 Ohm FM

BB814 (Dual) SOT23 46pF 2.15 0.2 Ohm FM
BB844 SOT23 45pF 3.5 0.3 Ohm FM
BB914 (Dual) SOT23 45 pF 2.35 0.28 Ohm FM

Type package C@1V C28/C1 rs Appl.

BB639 SOD323 38pF 14.7 0.65 Ohm VHF

BB659 SCD80 38pF 14.7 0.65 Ohm VHF
BB639C SOD323 39pF 15.3 0.6 Ohm VHF
BB659C, BB659C-02V SCD80, SC79 39pF 15.3 0.6 Ohm VHF
BB644 SOD323 42pF 16.4 0.6 Ohm VHF
BB664, BB664-02V SCD80, SC79 42pF 16.4 0.6 Ohm VHF
BB669 SOD323 57pF 20.9 0.85 Ohm VHF
BB689, BB689-02V SCD80, SC79 57pF 20.9 0.89 Ohm VHF
BB640 SOD323 69pF 22.9 1.15 Ohm VHF
BB535 SOD323 19pF 8.9 0.6 Ohm UHF
BB555, BB555-02V SCD80, SC79 19pF 8.9 0.6 Ohm UHF
BB545 SOD323 20pF 10.0 0.6 Ohm UHF
BB565, BB565-02V SCD80, SC79 20pF 10.0 0.6 Ohm UHF
BB831 SOD323 8.8pF 8.6 1.3 Ohm SAT
BB833 SOD323 9.3pF 12.4 1.8 Ohm SAT
BB837 SOD323 6.6pF 12.0 1.8 Ohm SAT
BB857 SCD80 6.6pF 12.0 1.8 Ohm SAT

© 2007 Infineon Technologies AG. All rights reserved. Page 130

Low voltage Varactor Diodes
for T-DMB and DVB-H Tuners
> RF Discretes > RF Varactor Diodes

Capacitance
value @ 1V

70 pF

50 pF BBY56-xx
C1V / C3V=2.5
rs @ 1 V = 0.25Ohm

30 pF
BBY58-xx
C1V / C3V=2.15 BBY65-02V
rs @ 1 V = 0.25Ohn C1V / C3V=4.55
rs @ 1 V = 0.6Ohm
BBY55-xx
C2V / C10V=2.5
10 pF rs @ 5 V = 0.15Ohm

BBY53-xx
C1V / C3V=2,2
rs @ 1 V = 0.47Ohm

1.0 2.0 3.0 4.0 5.0

Capacitance ratio

© 2007 Infineon Technologies AG. All rights reserved. Page 131

Table of Contents

„ RF Discretes

„ Introduction

„ RF Transistors

„ RF MMICs

„ RF Diodes

„ RF PIN Diodes

„ RF Varactor Diodes

„ RF Mosfet

© 2007 Infineon Technologies AG. All rights reserved. Page 132

RF MOSFET: Single and Dual
Gain controlled prestage amplifier for analog & digital TV/ VCR/
DVD/ STB Tuner
> RF Discretes > RF Mosfet

BF2030x
BF2040x
to SWF
UHF BF5030W

~
~
~
4 x BB565
~
~ ~
~
~
~
~ MOPLL IC
VHF H ~
~
~ 4 x BB659C

1
N
COMP
~
~
4 x BB689
VHF L PORTS
REF
BG3130/R DIV
4 Ports
BG3123/R 7

BG5130R Port/ADC ~
I 2C
~
~
BG3430R*

I2C Bus
* BG3430R: for two band tuners

© 2007 Infineon Technologies AG. All rights reserved. Page 133

DualMOS : Two MOSFETs in One package
> RF Discretes > RF Mosfet

Applications
ƒ Analog and digital tuner modules
ƒ More than 50% of footprint saving compared to 2 single MOSFETs
ƒ Less pick and place effort
ƒ Easier Logistics
ƒ Price advantage than 2 x single MOSFET

s
W ologie
30R logies
3 0
20 echn 1
BFineon T G 3
Inf W ologies B hnoec
3 0 eon
T
20 chn Infin
BFineon Te
Inf

SOT343 Outline: SOT363 Outline:

(L x W x H) 2*1.25*0.9 mm3 (L x W x H) 2*1.25*0.9 mm3

© 2007 Infineon Technologies AG. All rights reserved. Page 134

DualMOS Product Portfolio
> RF Discretes > RF Mosfet

PNP Switched NPN Switched PNP Switched

Gfs Semi Biased Full Biased Semi / Full Biased

25 mS BG3123 / R
GpsA/G psB = 25/24 dB
FA / FB = 1.8/1.8 dB
Cg1ssA/CdssA= 1.9/1.3 pF
Cg1ssB/CdssB= 1.5/1.1 pF

30 mS BG3130 / R BG3230 / R BG3430R

Gps = 24 dB Gps =25.5 dB Gps= 25 dB
F = 1.3 dB F = 1.3 dB F = 1.7 dB
Cg1ss/Cdss=1.9/1.1 pF Cg1ss/Cdss = 1.9/1.1 pF Cg1ss/Cdss = 1.9/1.1 pF

40 mS BG5130R
Gps = 24 dB
F= 1.3 dB
Cg1ss/Cdss=2.7/1.6 pF

Package for all types: SOT363

© 2007 Infineon Technologies AG. All rights reserved. Page 135

BG3430R New
First intelligent-switching dualMOS
> RF Discretes > RF Mosfet

G 1B G2 DB

Target applications:
- 2 or 2.5 band tuners e.g. for DVB-T G2
A m p. B

S
Supporting Tools: Int.
sw itch
- Datasheet and Simulation Data A m p. A

G2 S

G 1A S DA

Rg1

VGG

Key Features Performance Data

ƒ FET A with partly integrated biasing resistor network ƒ GfsA = GfsB = 33mS
ƒ FET B with fully integrated biasing resistor network ƒ Cg1ss = 1.8pF
ƒ Only one switching pin (G1A) to control two MOSFETs ƒ Cdss=1.3pF
simutaneously, at anytime there is always one FET switched ƒ NF @ 3V, 10mA, 800MHz = 1.2dB
on ƒ NF @ 3V, 10mA, 45MHz = 0.7dB
VGG = 5V, FET A ON, FET B OFF ƒ System ESD Class 2 (2kV – 4kV)
VGG = 0V, FET A 2)), FET B 21
ƒ in SOT363 package

© 2007 Infineon Technologies AG. All rights reserved. Page 136

BG3430R – RF DualMOS with Intelligent Switching
Layout advantage
> RF Discretes > RF Mosfet

ƒ Application: 2 or 2.5 band tuners

ƒ FET A semi-integrated biasing network, Gfs=24mS
FET B fully-integrated biasing network, Gfs=30mS
ƒ Only ONE switching line to switch on/off both MOS (PNP Port)
ƒ Switching @ Pin 1, FET A Gate 1

Switching matrix
VGG FET A FET B
5V On Off
0V Off On

Tuner layout is very high packed

Switching line from PNP port must be lead from tuner IC to MOSFET
If only one line has to be designed Æ Saves PCB area and 1 control port tuner
Æ Saves 1 resistor and 1 capacitor
Æ Lower risk of crosstalk, feedback
Æ Easier to design RF ground for MOSFET

© 2007 Infineon Technologies AG. All rights reserved. Page 137

SingleMOS Product Portfolio
> RF Discretes > RF Mosfet

VDS External Biasing Semi Biased Full Biased

12 V BF999 Triode
Gps = 25 dB
F =1.0 dB
Cgss/Cdss = 2.5/0.9 pF

9V BF998 / R BF1009S / SR
Gps = 20 dB Gps= 22 dB
F = 1.0 dB F = 1.4 dB
Cg1ss/Cdss= 2.1/1.2 pF Cg1ss/Cdss = 2.1/0.9 pF

BF2040 / R / W
Gps= 23 dB
F = 1.6 dB
Cg1ss/Cdss = 2.7/1.6 pF

5V BF2030 / R / W BF1005S / SR
Gps = 23 dB Gps: 20 dB
F = 1.6 dB F: 1.4 dB
Cg1ss/Cdss= 2.1/1.3 pF Cg1ss/Cdss = 2.1/1.3 pF

3V BF5030W
Gps= 24 dB
F = 1.3 dB
Cg1ss/Cdss = 2.7/1.6 pF

Package: SOT23 / SOT143 / SOT143 Reverse / SOT343

© 2007 Infineon Technologies AG. All rights reserved. Page 138

BF5030W / BG5130R
Ultra Low Noise, Low Power MOSFETs
> RF Discretes > RF Mosfet

Target applications:
5V or 3V tuners requiring superior NF performance

Available types:
Single semi-biased MOSFET in SOT343 BF5030W
Dual semi-biased MOSFET in SOT363 BG5130R

Evaluation board of BF5030W available

- For 50MHz/800MHz
- Application Notes on Internet site

Key features: Performance :

ƒ Ultra low NF under 5V or 3V supply voltages ƒ Gfs = 41mS

ƒ NF more independent from mismatch of tuner module ƒ Cg1ss = 2.7pF
ƒ Power saving of 40% under 3V supply voltage ƒ Cdss=1.6pF
ƒ Verified with System ESD Class 2 (2kV – 4kV) ƒ NF @ 3V, 10mA, 800MHz = 1.2dB
ƒ System solution with Infineon new tuner IC ƒ NF @ 3V, 10mA, 45MHz = 0.7dB
TUA6045/TUA6041/TUA6039 ƒ Xmod @ AGC 0 = 94dB
ƒ Xmod @ AGC 10dB = 92 dB
ƒ Xmod @ AGC 40 dB = 98 dB

© 2007 Infineon Technologies AG. All rights reserved. Page 139

RF MOSFET Biasing Explanation
> RF Discretes > RF Mosfet

Full Biased
NPN Port
Tuner IC
fully integrated DC 5V / 9V
biasing network
AGC
External Biasing
RF Out
DC
AGC
RF In MOSFET
RF Out

RF In MOSFET

Semi Biased PNP Port

Tuner IC
DC

AGC
DC
RF Out

integrated biasing
RF In MOSFET
network but
external resistor
at G1
DC

© 2007 Infineon Technologies AG. All rights reserved. Page 140

Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 141

Schottky Diodes
> Schottky Diodes

Signal Detection Schottky Diodes Circuit Protection

High Speed Switching Clamping

Mixer Application Rectifying

Requirements
ƒ High efficiency / low loss
ƒ Low Forward voltages VF
ƒ Low leakage current
ƒ Low power consumption
ƒ Low level of signal distortion
ƒ Small packages and more elements /package

© 2007 Infineon Technologies AG. All rights reserved. Page 142

Schottky Diode Portfolio
Diode Capacitance vs. Forward Voltage
> Schottky Diodes

WLAN: WLAN: Mobile phones: Dataline protection (PC, Notebook):

5-6 GHz 2.4 GHz 0.8 to 2.1 GHz 0 to 0.2 GHz
0,5
BAT62 series
Forward voltage VF (V) @ 1 mA/10mA/100mA

0,4 BAS125 series

BAS70 series
BAS3005B-02V BAS3010B-03W

BAT17 series BAT240A

BAS52-02V
BAT68 series
BAT64 series BAT54
0,3
BAS40 series BAT165 BAS3010A-03W

BAT60B
BAT15 series

0,2 VF @ 1mA
BAT63 series
VF @ 10mA

VF @ 100mA

BAT60A

0,1
0,1 1 10 100
capacitance C (pF) @ 0 V

© 2007 Infineon Technologies AG. All rights reserved. Page 143

Schottky Diode Portfolio
Max. Current vs. Breakdown Voltage
> Schottky Diodes

1000

RF-Schottky
BAT240A

100

BAS70 series BAS52-02V

BAS40 series
V bd [V]

BAT62 series BAT64 series

BAT165 BAS3010
BAS3005
BAS125 series

10 BAT60A/B
BAT68 series

BAT15 series

BAT17 series

BAT63 series

1
10 100 Imax [mA] 1000 10000

© 2007 Infineon Technologies AG. All rights reserved. Page 144

Medium Power AF-Schottky Family
For DC/DC Converter, Battery Charger, ....
> Schottky Diodes

Smallest package => Ideal for Mobile Phone, PDA, Portable Computer, Digital Still Camera, ...
ƒ Max. current IF: 0.2 A to 2.0 A; max. reverse voltage VR: 10 V to 45 V
ƒ Low VF-type and low IR-types available
ƒ High ESD ruggedness

VF @
IF appl. Vr max IR @ 10V C @ -5V
Type IF appl. Package
[A] [V] [µA] [pF]
[V]
BAT165 0.2 0.4 40 0.2 12 SOD323
BAS52-02V 0.2 0.49 45 0.2 7 SC79
BAS3005A-02V 0.5 0,45 30 2,5 10 SC79
w

BAS3005B-02V 0.5 0.55 30 1.5 6 SC79

ne

BAS3010A-03W 1.0 0.41 30 10 28 SOD323

BAS3010B-03W 1.0 0.48 30 1 33 SOD323
BAT60A 2.0 0.4 10 2000 20 SOD323
BAT60B 2.0 0.55 10 10 25 SOD323

Package size: SC79: 1.6 x 0.8 mm; SOD323: 2.5 x 1.25 mm

Color code: Low VF-type; Low IR-type

© 2007 Infineon Technologies AG. All rights reserved. Page 145

Schottky Diodes vs. Silicon Diodes
for Reverse Polarity Protection
> Schottky Diodes

Why use Schottky diodes for Reverse Polarity Protection (RPP) ?

ƒ Schottky diodes have lower forward voltage ( VF), typically ~ 0.3 volts, as opposed
to ~ 0.7 volts for Silicon diodes.

This can be a significant advantage in some applications, e.g. for LED lighting arrays,
where goal is to put as many LED’s into one “stack” as possible. Minimizing diode
voltage drop might mean being able to add one more LED to the LED stack.

The lower VF of Schottky diodes also means reduced power dissipation / higher DC
efficiency in the overall circuit.

ƒ 2. Speed. Schottky diodes generally “switch” faster than Silicon diodes.

© 2007 Infineon Technologies AG. All rights reserved. Page 146

Schottky Diodes vs. Silicon Diodes
Performance comparision
> Schottky Diodes

Diode forward current vs. forward voltage drop

0,7

0,6

0,5 Standard Silicon Diode

Low VF Silicon Diode
Low VF Schottky Diode
0,4
IF (A)

Calculation of power loss per diode:

0,3 Standard Silicon Diode:
Ptot = 0.7 A x 1.6 V = 1.1 W
Low VF Silicon Diode:
0,2
Ptot = 0.7 A x 1.0 V = 0.7 W (-36%)
Low VF Schottky Diode:
0,1 Ptot = 0.7 A x 0.5 V = 0.35 W (-68%)

0,0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0
VF (V)

© 2007 Infineon Technologies AG. All rights reserved. Page 147

Reverse Polarity Protection („RPP“)
with BAS30xx families e.g. for LED drivers, battery chargers.
> Schottky Diodes

Plug to DC Plug to DC
power supply power supply

+Vs GND +Vs/ GND/

GND +Vs

+Vs GND +Vs GND

„ DC protected „ DC protected
circuit circuit

Prevents damage to circuit when DC Protects circuit from reverse polarity

plug is inserted backwarded. damage.
BUT in this case the circuit will not AND circuit will function properly even if
function. DC power plug is inserted backwards

Schottky Diode: BAS3010S-03LRH*, BAS3010A-03W

BAS3020B*
Schottky Diode Array: BAS3007A-RPP*
© 2007 Infineon Technologies AG. All rights reserved. *New Products on request Page 148
Schottky Diodes for Mixer Applications
> Schottky Diodes

Low capacitance value for high frequency range

ƒ Low & medium Schottky Barrier for low LO mixers
ƒ Available as single and dual diodes
ƒ Latest type BAT24-02LS with ultra-low capacitance for 24GHz Radar
Modules, etc.

for WLAN applications: In super-mini TSSLP

also available in TSLP-RH package

BAT15xx BAT17xx BAT24-02LS

CT@0V 0.26 pF 0.55 pF 0.22 pF

VF @1mA 230 mV 340 mV 230 mV
IF max 110 mA 130 mA 110 mA

© 2007 Infineon Technologies AG. All rights reserved. Page 149

Ultra Low Parasitic Inductance & Capacitance
Schottky Diode BAT24-02LS
> Schottky Diodes

RF mixer and detector Schottky diodes with integrated guard ring

ƒ AEC Q101 (automative) qualified
ƒ Wide operating temperature range: -55 ~ 150°C
ƒ Package size: 0.6mm*0.3mm*0.31mm
ƒ Target applications: 24GHz radar modules
Electrical Toll Collection, etc.
ƒ Competitor types: MACOM MA4E2502L series

BAT24-02LS
Ls 0.2 nH

CT@0V 0.21 pF

VF @1mA 230 mV

IF max 110 mA

Frequency range DC to 24GHz

© 2007 Infineon Technologies AG. All rights reserved. Page 150

Schottky Diodes for Signal Detection
(Power Leveling)
> Schottky Diodes

ƒ Low capacitance value for high frequency range

ƒ Low & medium Schottky Barrier for high sensitivity in detector appl.
ƒ Available as single and dual diodes

New: BAT62-02LS New: BAT63-02V

In super-mini TSSLP in SC79 package!

BAT62xx BAT63xx BAT68xx BAS70xx

CT@0V 0.35 pF 0.75 pF 0.75 pF 1.5 pF

VF @1mA 440 mV 318 mV 318 mV 375 mV
IF max 20 mA 130 mA 130 mA 70 mA

© 2007 Infineon Technologies AG. All rights reserved. Page 151

BAT63-series
Zero Bias for Tire Pressure Monitoring Systems (TPMS)
> Schottky Diodes
Forward characteristic comparison
Product description
for different barrier types

Zero bias Schottky Diode for RF signal detection,

especially optimized for high temperature
application
low barrier type: BAT63
Applications: Tire pressure monitoring system ultra low barrier type
extreme low barrier type
(TPMS), Electronic Toll Collect (ETC), etc

Key advantage: NO degradation of detection

sensitivity at higher temperatures

Detection sensitivity at 25°C Detection sensitivity at 150°C

low barrier type: BAT63 low barrier type: BAT63

ultra low barrier type ultra low barrier type
extreme low barrier type extreme low barrier type

© 2007 Infineon Technologies AG. All rights reserved. Page 152

BAT62-09S
High Isolation Schottky Diode Pair in SOT363
> Schottky Diodes

BAT62-09S

Application / Features
ƒ Large signal detector in PA modules
ƒ Improved cross-talk isolation

Competition
ƒ Agilent HSMS series

Status: mass production

Other available configurations:

• Single: in SOT143 / TSLP /
TSSLP / SOD323 / SCD80
• Dual: in SOT343 / TSLP4

© 2007 Infineon Technologies AG. All rights reserved. Page 153

Schottky Diodes for Clamping /
Circuit Protection / High Speed Switching
> Schottky Diodes

ƒ Schottky Diodes for clipping & clamping applications

ƒ Schottky Diodes for circuit protection
ƒ Schottky Diodes for high speed switching
ƒ Low capacitance value for high frequency range
ƒ Available as single and dual diodes

BAS125xx BAS40xx BAT54xx BAT64xx

CT@0V 1.0 pF 3.0 pF 7.0 pF 6.0 pF

VF @1mA 385 mV 310 mV 240 mV 320 mV
IF max 100 mA 120 mA 200 mA 250 mA

© 2007 Infineon Technologies AG. All rights reserved. Page 154

Clipping, Clamping and
Transient Voltage Suppression

Problem: Noisy data-spikes can damage digital circuits!

After Filtering

spikes in datastream
Two Schottky diodes are used for
protecting sensitive circuit elements
against spikes.

(TSLP-2)
Protection Diode: BAT17xx, BAT62xx, BAT54xx, BAT64xx,
BAT68xx, BAS40xx, BAS70xx, BAS125xx

Available Packages: SC79, SCD80, SOD323, SOT23, SOT323, SOT143, SOT343, TSLP-2

© 2007 Infineon Technologies AG. All rights reserved. Page 155

Latest AF-Schottky Diodes with Wide Package Portfolio
BAT54-series, BAT64-series
> Schottky Diodes

BAT64xx BAT54xx
ƒ For clipping & clamping applications
ƒ For circuit protection CT@0V 4.0 pF 7.0pF
ƒ For high speed switching UF @1mA 320 mV 240 mV
ƒ Available as single and dual diodes
IF max 250 mA 200 mA

SOT23 SOT323 SC79 SCD80

BAT54* BAT54W* BAT54-02V BAT64-02W

(single) (single) (single) single)

BAT54-04* BAT54-04W*
(series) (series)
TSLP2-RH
BAT54-05* BAT54-05W* BAT54-02LRH
(com. cathode) (com. cathode) (single)

BAT54-06* BAT54-06W*
(com. anode) (com. anode)

* Configurations available also for BAT64 family

© 2007 Infineon Technologies AG. All rights reserved. Page 156

Schottky Diodes for Modems
& Battery Powered Applications
> Schottky Diodes

BAT240A
high VR breakdown
CT 11.5 pF
Modem VR 240 V High breakdown voltage
Protection Ifmax 400 mA

Battery Powered
BAT60A
Applications
very low voltage drop VF
CT 20.0 pF
VF@10mA 0.12 mV
BAT60B
Ifmax 3.0 A
low voltage drop VF
CT 25.0 pF
VF@10mA 0.24 mV
Low voltage drop Ifmax 3.0 A

© 2007 Infineon Technologies AG. All rights reserved. Page 157

BAT240A for Modems Applications
> Schottky Diodes

Worldwide programmable SW Modem (PCI 2.1 interface)

2 X BAT 240
Schottky Diode Tip

PITA AUS-D AUS-A

PSB 4600 PSB 4596 PSB 4595
Ring
PCI Interface

Optional

Modem with optical DAA

2 X BAT 240
DAA 2000 Schottky Diode Tip
Kit

A/D IL338

Data Modem Codec DM207 DL207

Ring
Datapum
p IL338
D/A

© 2007 Infineon Technologies AG. All rights reserved. Page 158

Available Schottky Diodes in TS(S)LP
> Schottky Diodes
1.2 x 0.8 x 0.4 mm

BAS40-02L TSLP2 High speed

BAS70-02L TSLP2 switching clipping
BAT54-02LRH TSLP2-RH and clamping

BAT15-02LRH TSLP2-RH
BAT15-07LRH(D) TSLP4-RH
BAT15-098LRH(D) TSLP4-RH RF mixer
BAT15-099LRH(D) TSLP4-RH and
BAT24-02LS TSSLP2 detector,
power
BAT62-02LS TSSLP2
leveling
BAT62-02L TSLP2
BAT62-07L4(D) TSLP4-RH

© 2007 Infineon Technologies AG. All rights reserved. Page 159

Schottky Diode Lineup
RF Mixer / Detection / Power Leveling
> Schottky Diodes
Type VRmax [V] IFmax [mA] CT [pF] VF [mV] Package
BAT15-02LRH 4 110 0,26 230 TSLP2
BAT15-03W 4 110 0,26 230 SOD323
BAT15-04W D 4 110 0,26 230 SOT323
BAT15-05W D 4 110 0,26 230 SOT323
BAT15-07LRH D 4 110 0,26 230 TSLP4
BAT15-098LRH D 4 110 0,26 230 TSLP4
BAT15-099 / LRH D 4 110 0,26 230 SOT143
BAT15-099R Q 4 110 0,38 230 SOT143
BAT17 4 130 0,55 340 SOT23
BAT17-04 / W D 4 130 0,55 340 SOT23 / SOT323
BAT17-05 / W D 4 130 0,55 340 SOT23 / SOT323
BAT17-06W D 4 130 0,55 340 SOT323
BAT17-07 D 4 130 0,75 340 SOT143
BAT24-02LS 4 110 0,21 230 TSSLP2
BAT62 40 20 0,35 580 SOT143
BAT62-02L / -02LS /-02W 40 120 0,35 580 TSLP2 / TSSLP2 /SCD80
BAT62-03W 40 20 0,35 580 SOD323
BAT62-07L4 / W D 40 20 0,35 580 TSLP4 / SOT343
BAT62-09S D 40 20 0,35 580 SOT363
BAT63-02V 3 100 0,65 190 SC79
BAT63-07W D 3 100 0,65 190 SOT343
BAT68 8 130 0,75 318 SOT23
BAT68-04 / W D 8 130 0,75 318 SOT23 / SOT323
BAT68-06 / W D 8 130 0,75 318 SOT23 / SOT323
BAT68-07W D 8 130 0,75 318 SOT343
BAT68-08S T 8 130 0,75 318 SOT363
© 2007 Infineon Technologies AG. All rights reserved. Page 160
Schottky Diode Lineup
High speed switching / clipping / clamping
> Schottky Diodes

Type VRmax [V] IFmax [mA] CT [pF] VF [mV] Package

BAS125-04W D 25 100 0,95 385 SOT323
BAS125-05W D 25 100 0,95 385 SOT323
BAS125-06W D 25 100 0,95 385 SOT323
BAS125-07W D 25 100 0,95 385 SOT343
BAS140W 40 120 3 310 SOD323
BAS170W 70 70 1,5 375 SOD323
BAS40 / -02L 40 120 3 310 SOT23 / TSLP2
BAS40-04 D 40 120 3 310 SOT23
BAS40-05 / W D 40 120 3 310 SOT23 / SOT323
BAS40-06 / W D 40 120 3 310 SOT23 / SOT323
BAS40-07 / W D 40 120 3 310 SOT143 / SOT343
BAS70 70 70 1,6 375 SOT23
BAS70-02L / -02W 70 70 1,5 375 TSLP2 / SCD80
BAS70-04 / W D 70 70 1,6 / 1,5 375 SOT23 / SOT323
BAS70-04S Q 70 70 1,6 375 SOT363
BAS70-05 / W D 70 70 1,6 / 1,5 375 SOT23 / SOT323
BAS70-06 / W D 70 70 1,6 / 1,5 375 SOT23 / SOT323
BAS70-07 / W D 70 70 1,5 375 SOT143 / SOT343
BAT240A D 240 400 11,5 325 SOT23
BAT54 / W 30 200 < 10 <320 SOT23 / SOT323
BAT54-02LRH / -02V 30 200 <10 <320 TSLP2 / SC79
BAT54-04 / W D 30 200 <10 <320 SOT23 / SOT323
BAT54-05 / W D 30 200 <10 <320 SOT23 / SOT323
BAT54-06 / W D 30 200 <10 <320 SOT23 / SOT323
BAT64 / -02V / -02W 40 250 4 320 SOT23 / SC79 / SCD80
BAT64-04 / W D 40 250 4 320 SOT23 / SOT323
BAT64-05 / W D 40 250 4 320 SOT23 / SOT323
BAT64-06 / W D 40 250 4 320 SOT23 / SOT323
© 2007 Infineon Technologies AG. All rights reserved. Page 161
Schottky Diode Lineup
Medium power IFmax > 500 mA
> Schottky Diodes

Type VRmax [V] IFmax [mA] Iapp. [mA] VF@Iapp. [mV] IR [µA] Package
BAS3005A-02V 30 500 500 450 <300 SC79
BAS3005B-02V 30 500 500 550 <25 SC79
BAS3010A-03W 30 1000 1000 410 <200 SOD323
BAS3010B-03W 30 1000 1000 480 <20 SOD323
BAS52-02V 45 750 200 490 <10 SC79
BAT165 40 750 250 440 <50 SOD323
BAT60A 10 3000 2000 400 300 SOD323
BAT60B 10 3000 2000 450 5 SOD323

© 2007 Infineon Technologies AG. All rights reserved. Page 162

Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 163

HiPAC, TVS Diodes, Silicon Microphone
> HiPAC, TVS Diodes, Silicon Microphone

ƒ TVS Diodes are very flexible and robust ESD protection devices
ƒ HiPAC offers both ESD/EMI and high integration for advanced applications

TVS Diodes HiPAC

High Q Inductors Low Tolerance

Resistors

High Q passive

&
ESD Protection high performance active High Q / High Value
Diodes Capacitors
devices on chip

ƒ ESD protection ƒ Monolithic integrated ESD/EMI protection

ƒ High power capability ƒ Integration of high performance passives
ƒ Design flexibility ƒ Superior performance compared to ICs
ƒ ESD-bug fixing ƒ Multi-channel in one package
ƒ Easy and fast system design-in ƒ Customized-design possibility
ƒ Single- or Multi-channel in one package ƒ HiPAC exceeds ESD/EMI protection
ƒ 24 Volt capability applications, e.g. RF filters, in stage matching

© 2007 Infineon Technologies AG. All rights reserved. Page 164

Table of Contents

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ HiPAC

„ TVS Diodes

„ Silicon Microphone

© 2007 Infineon Technologies AG. All rights reserved. Page 165

HiPAC :
Smart Solution with a Maximum of Space Saving
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

THE SMART SOLUTION:

Integrated Discretes
ƒ Reduced Costs
ƒ Enhanced Reliability
ƒ Better Performance

THE CLUMSY SOLUTION:

Discrete Components

THE TASK with DISCRETES

© 2007 Infineon Technologies AG. All rights reserved. Page 166

Customer Benefit using HiPAC Solutions
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

Providing new possibilities and adding value to your business

ƒ Improvement of functional performance

ƒ Reduction of board space

ƒ Reduced No. of devices / suppliers

ƒ Lower assembly, pick-and-place and inventory costs

ƒ Improved overall quality and reliability level results in higher production yields

ƒ Provides ESD / EMI protection at reasonable costs to reduce warranty costs

ƒ Exceeding IEC61000-4-2 requirements: 15 kV contact discharge for all outside I/O

ƒ Driver towards miniaturization and adding new functionality

© 2007 Infineon Technologies AG. All rights reserved. Page 167

BGF100 / BGF200
Audio Filter for Differential / Single Ended Microphones
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

ƒ Improves audio performance

ƒ Eliminates system distortions
of headset “antenna”
ƒ 15 kV ESD-protection
ƒ Low pass filter circuit with ESD
diodes, R´s and C´s
ƒ WLP11 Package (BGF100)
ƒ WLP8 (BGF200)

e.g. BGF100

Attenuation
0 channel1

-20 channel2

-40

-60

-80
.01 .1 1 10
BGF100 Frequency (GHz)

© 2007 Infineon Technologies AG. All rights reserved. Page 168

BGF104 Flash Memory ESD Protection
High Speed Multi Media Card (HSMMC)
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC
75k
75k
75k
75k
15kV 2kV
7k
Vmmc Vdd
MMCclk 50
clk
MMCcmd 50
cmd
MMCdat0 50 dat0
MMCdat1 50 dat1
MMCdat2 50 dat2
MMCdat3 50 dat3

GND

ƒ ESD protection according IEC61000-4-2

2.0 mm
ƒ 15 kV ESD protection for all pins to the outside
ƒ 2 kV ESD protection for all internal pins
ƒ Integrated filter function for EMI reduction
ƒ Capacity per Line CT: 16 pF
ƒ Package: WLP-16
ƒ Solder Ball Pitch: 500 µm
0.40 mm
0.25 mm

© 2007 Infineon Technologies AG. All rights reserved. Page 169

BGF108 & BGF109
7 Channel & 10 Channel LCD Protection
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

„ 7x / 10x on
chip

„ ESD protection acc. IEC61000-4-2

- 15 kV ESD protection at LCD interface of mobile
phone
„ Integrated filter function for EMI reduction
„ Capacity per Line CT: 14 pF
„ Package: WLP-18 (BGF108), WLP-24 (BGF109)
„ Solder Ball Pitch: 400 µm

© 2007 Infineon Technologies AG. All rights reserved. Page 170

BGF105 & BGF106 NEW
NEW
SIM Card Interface Protection
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

ƒ ESD protection acc. IEC61000-4-2

ƒ 2 kV @ Pin A3, B3, C3
ƒ 15 kV @ A2, B1, C1, C2
ƒ Integrated filter function for EMI reduction
ƒ Capacity per Line CTmax: 20 pF
ƒ Package: WLP-8
ƒ Solder Ball Pitch: 500 µm (BGF105) / 400 µm (BGF106)
ƒ SOP – Q3CY2007

© 2007 Infineon Technologies AG. All rights reserved. Page 171

BGF110 NEW
NEW
SD Card ESD Protection
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

ƒ ESD protection acc. IEC61000-4-2

- 15 kV for SD Card Interface
- 2 kV ESD protection at internal I/O
ƒ Integrated filter function for EMI reduction
ƒ Capacity per Line CT: 16 pF
ƒ Package: WLP-24
ƒ Solder Ball Pitch: 400 µm
ƒ SOP – Q3CY2007

© 2007 Infineon Technologies AG. All rights reserved. Page 172

BGF111 NEW
NEW
TV out filter & ESD protection
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

ƒ ESD protection acc. IEC61000-4-2

- 15 kV for Ext. I/O
- 2 kV ESD for Int. I/O

0.75 mm
ƒ Integrated filter function for EMI reduction
ƒ Capacity per Line CT: 44 pF
ƒ 75 Ohm interface (video interface)
ƒ Package: WLP-4
ƒ Solder Ball Pitch: 400 µm
0.20 mm

0.40 mm
ƒ SOP – Q3CY2007

© 2007 Infineon Technologies AG. All rights reserved. Page 173

HiPAC for Wireless Applications:
Application Overview
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

Matching LNA Balun BPF Matching

Transceiver & Baseband Chipset

Antenna
Switch
Harmonic-Filter &
Matching Network &
Harmonic Mode Conversion/
Filter Power PA Hybrid coupler
Detection

Use the benefits of our HiPAC technologies, the function blocks can be realized:
- Matching Networks for e.g. TRX to PA, SAW/BAW to TRX, LNA…
- Filters (BP, LP, HP, Harmonic Filters)
- Balun/Auto-trafo for mode conversion
- Power detection through coupler
- Hybid coupler

© 2007 Infineon Technologies AG. All rights reserved. Page 174

BGH92M/BGH182M
HiPAC for Wireless Applications: H3 – Filter
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC

Features
ƒ Passband insertion loss typ. 2.8 dB
ƒ H3 suppression typ. 45 dB
ƒ H4 common mode suppression typ. 40 dB
BGH92M
ƒ Low amplitude ripple
ƒ Balanced to single ended operation
- Input 390 Ohm balanced
- Output 50 Ohm single ended
ƒ Integrated DC-biasing to in- and output
ƒ TSLP 7
BGH182M

Forward Transmission
0

-10
Insertion Loss / dB

-20

-30

-40

-50

-60
0 1 2 3 4 5 6
Frequency / GHz

© 2007 Infineon Technologies AG. All rights reserved. Page 175

Table of Contents

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ HiPAC

„ TVS Diodes

„ Silicon Microphone

© 2007 Infineon Technologies AG. All rights reserved. Page 176

1 or 2-Channel Low Capacitance bi-directional ESD
Diode in Ultra-Small TSLP Package
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes

ESD8V0L1B-02LRH & ESD8V0L2B-03L m

m
mm
4
00..4 llyy
e
gg t oonn
e
Target a
a
kk ghht Schematic
Schematic and
and PIN
PIN Configuration
Target Application
Application c
c Configuration
PPa hheeiig
a
ESD
ESD protection
protectionof of high-speed
high-speed datadata interfaces
interfaces
like USB 2.0, 10/100 Ethernet, Firewire,
like USB 2.0, 10/100 Ethernet, Firewire, 1 3
Video,
Video,Serial/Parallel
Serial/Parallel and
and LAN/WAN
LAN/WAN ports;ports;
1 2
For
Forapplications
applicationsfrom
from3.3V
3.3Vup
uptoto14V
14V
2
TSLP-3-1 2 TSLP-2-7
3 2
Parameter
Parameter Overview
Overview 1

Parameter
Parameter Condition
Condition Value
Value 1
•• VVRWM
RWM
14V
14V (V+)
(V+) 1.0x0.6x0.4mm 1.0x0.6x0.39mm
8V (V-)
8V (V-)
•• IIRWM
RWM
3V,
3V,25°C
25°C 100nA
100nAmaxmax
•• CCLL 0V, 1MHz
0V, 1MHz 2pF/4pF/8.5pF
2pF/4pF/8.5pF Application
Application Example
Example
typ.
typ.
•• IEC61000-4-2
IEC61000-4-2 (contact)
(contact) >15kV
>15kV
•• IEC61000-4-4
IEC61000-4-4 (5/50ns)
(5/50ns) >40A
>40A
V RUS
ESD
•• IEC61000-4-5
IEC61000-4-5 (8/20µs)
(8/20µs) >1A
>1A//>2A
>2A D Sensitiv
D- e device
GND

1x
ESP8VOL2B-03L
GMD
© 2007 Infineon Technologies AG. All rights reserved. Page 177
Ultra Low Capacitance, Low Intermodulation, RF
ESD Protection Diodes
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes

ESDxPyRF-series
DD
EESS tiioonn
Target
Target Application
Application RRFF teecct Schematic
Schematic and
and PIN
PIN Configuration
Configuration
rroot
PP
Applications
Applications inin anti-parallel
anti-parallel configuration
configuration
For
For low RF signal levels withoutsuperimposed
low RF signal levels without superimposed
DC
DC voltage: e.g. GPS, XM-Radio,Sirius,
voltage: e.g. GPS, XM-Radio, Sirius,DVB,
DVB,
DMB, DAB, Remote keyless
DMB, DAB, Remote keyless entry entry
Applications
Applications inin rail-to-rail
rail-to-rail configuration
configuration
For
For high RF signal levels or lowRF
high RF signal levels or low RFsignal
signallevels
levels
with
with superimposed DC voltage: e.g. HDMI,S-ATA,
superimposed DC voltage: e.g. HDMI, S-ATA,
Gbit Ethernet
Gbit Ethernet TSLP4 SOT363
SOT323 Size only 2-Channel protection
1.2x0.8x0.4
Parameter
Parameter Overview
Overview

Parameter
Parameter Condition
Condition Value
Value Application
Application Example
Example
•• VVCL
CL
3A,
3A,8/20µs
8/20µs ~4V
~4V
•• CCLL(ESD0P8RF)
(ESD0P8RF) 0V, 1MHz
0V, 1MHz 0.8pF
0.8pF
•• CCLL(ESD1P0RF)
(ESD1P0RF) 0V,
0V,1MHz
1MHz 1.0
1.0pF
pF
•• IEC61000-4-2
IEC61000-4-2 (contact)
(contact) >15kV
>15kV T
•• IEC61000-4-4
IEC61000-4-4 (5/50ns)
(5/50ns) >40A
>40A N RF
•• IEC61000-4-5
IEC61000-4-5 (8/20µs)
(8/20µs) >10A
>10A Circuit

ESD1P0RFW

© 2007 Infineon Technologies AG. All rights reserved. Page 178

1- to 5-Channel TVS Diode Arrays for General
Purpose Protection
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes

ESD5V0S1U-03W / ESD5V0S2U / ESD5V0S4US / ESD5V0S5US

Target
Target Application
Application Schematic
Schematic and
and PIN
PIN Configuration
Configuration
SS
TTVV
ESD,
ESD, EFT
EFT && lightning
lightning protection;
protection; Low
Low speed
speed
data
data interface (Power Line, Microphone,Speaker,
interface (Power Line, Microphone, Speaker, 1
Headset, Flash Card) in 5V applications (Cellular
Headset, Flash Card) in 5V applications (Cellular 3
phone,
phone,PDA,
PDA,Digital
DigitalStill
StillCamera,
Camera,MP3-player,
MP3-player,etc.)
etc.) 2

ESD5V0S1U-03W ESD5V0S2U-06 ESD5V0S4US ESD5V0S5US

Parameter
Parameter Overview
Overview (SOD323) (SOT23) (SOT363) (SOT363)

Parameter
Parameter Condition
Condition Value
Value
•• VVRWM 5V
5V max
max
RWM Application
Application Example
Example
•• VVCLCL
5A,
5A,8/20µs
8/20µs 8.8V
8.8Vmaxmax
•• IIRWM
RWM
5V,
5V,25°C
25°C 2µA
2µAtyp.
typ.
•• PPPKPK
8/20µs
8/20µs up
uptoto330W
330W I/O
I/O
•• CCLL 0V,
0V,1MHz
1MHz <500pF
<500pF I/O
I/O
•• IEC61000-4-2
IEC61000-4-2 (contact)
(contact) •25kV
•25kV
•• IEC61000-4-4
IEC61000-4-4 (5/50ns)
(5/50ns) up
uptoto40A
40A ESD
•• IEC61000-4-5
IEC61000-4-5 (8/20µs)
(8/20µs) up to 30A
up to 30A Sensitive
Device

2x
ESD5V0S2U

GND

© 2007 Infineon Technologies AG. All rights reserved. Page 179

2-Channel Bi-Directional TVS Diode Array For
CAN Bus Protection
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes

ESD24VS2B & ESD24VS2U

ss
BBuu
NN Schematic
Schematic and
and PIN
PIN Configuration
Configuration
Target
Target Application
Application CCAA TVVSS
T
ESD,
ESD, EFT
EFT && lightning
lightning protection;
protection; Low
Lowand
andHigh
High
Speed CAN Automotive networks
Speed CAN Automotive networks and or and or ESD24VS2B
Industrial
IndustrialControl
ControlNetworks
Networks
IC
ICprotection
protectioninin24V
24V applications
applications (Notebooks,
(Notebooks,
desktops,
desktops, and
and servers)
servers)

ESD24VS2U
Parameter
Parameter Overview
Overview (preliminary)
(preliminary) ESD24VS2B

Parameter
Parameter Condition
Condition Value
Value (SOT23)
•• VVRWM
RWM
24V
24V
•• VVCL 5A,
5A,8/20µs
8/20µs 40V
40V
CL Application
Application Example
Example
•• IIRWM
RWM
24V,
24V,25°C
25°C 10nA
10nAmaxmax
•• PPPKPK
8/20µs
8/20µs 180W
180Wper perdiode
diode
•• CCLL 0V, CAN High
0V,1MHz
1MHz 24pF typ.
24pF typ.
•• IEC61000-4-2
IEC61000-4-2 (contact)
(contact) 30kV
30kVcontact!
contact! CAN
•• IEC61000-4-4 (5/50ns) 40A Transceiver CAN Low CAN Bus
IEC61000-4-4 (5/50ns) 40A
•• IEC61000-4-5
IEC61000-4-5 (8/20µs)
(8/20µs) 5A
5Aper
perdiode
diode

1x
ESD24VS2B

© 2007 Infineon Technologies AG. All rights reserved. Page 180

Ultra Low Capacitance Rail-to-Rail TVS Diode Array
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes

ESD70VU2RR-07 p
ccaap
w
a lloowS
Target
Target Application trra V S Schematic
Schematic and
and PIN
PIN Configuration
Application uullt TTV Configuration

ESD, 4 3
ESD, EFT
EFT && lightning
lightning protection
protection of
of ADSL,
ADSL, ISDN,
ISDN,
WAN, LAN or other telecom application (rail-to-
WAN, LAN or other telecom application (rail-to-
rail).
rail).

Parameter
Parameter Overview
Overview (preliminary)
(preliminary)
Parameter Condition Value 1 2
Parameter Condition Value
•• VVRWM 70V
70V max
max ESD70VU2RR-07 (SOT143)
RWM
•• VVCLCL
10A,
10A,8/20µs
8/20µs 4V max
4V max
•• IIRWM
RWM
70V, 25°C
70V, 25°C 5µA
5µAmax.
max. Application
Application Example
Example
•• PPPKPK
8/20µs
8/20µs up
up to330W
to 330W
•• CCLL 0V,
0V,1MHz
1MHz <5pF
<5pF
•• IEC61000-4-2
IEC61000-4-2 (contact)
(contact) •25kV
•25kV
•• IEC61000-4-4
IEC61000-4-4 (5/50ns)
(5/50ns) >40A
>40A ESD
•• IEC61000-4-5
IEC61000-4-5 (8/20µs)
(8/20µs) >24A
>24A V sensitive
device
+

ESD70VU2RR-07

© 2007 Infineon Technologies AG. All rights reserved. Page 181

TVS Diodes Combine a Very Fast Response Speed
with Lowest Clamping Voltages
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes

TVS Diode Zener Diode MOV/MLV Polymer ESD

Response Speed Fast
Very Fast Very Fast Very fast
(Voltage Limit Speed) (~few ns)
Poor,
Surge Handling Capability Low to Medium
Medium to High Medium to High degradation
(not specified)
effects
Multi-strikes Very good Good Poor Poor

Low to Medium Very Low

Line Capacitance Medium (>30pF) Low to High
(>0.8pF) (0.05 … 3pF)

Very High
Clamping Voltage Low Medium Very High
>300V (Trigger!)

Precision of Clamping Good (but high

Good Poor Poor
Voltage trigger V)

Wide Range of Breakdown Voltage Very good Good Only >15V See trigger voltage

Uni-directional Yes Yes No No

Bi-directional Yes No Yes Yes
Leakage Current Low Middle High Low

Comment Critical SMT

© 2007 Infineon Technologies AG. All rights reserved. Page 182

Table of Contents

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ HiPAC

„ TVS Diodes

„ Silicon Microphone

© 2007 Infineon Technologies AG. All rights reserved. Page 183

Application example: Hands Free
> HiPAC, TVS Diodes, Silicon Microphone > Silicon Microphone

„ Hands-Free in the car: Low body noise

coupling (vibration of the car)

„ Directionality with arrays of microphones

„ Integration in noise reduction and echo

cancellation systems

© 2007 Infineon Technologies AG. All rights reserved. Page 184

SMM310
Analog Microphone for Mobile Applications
> HiPAC, TVS Diodes, Silicon Microphone > Silicon Microphone

Description Frequency response

„ Silicon MEMS Microphone
„ Surface mount assembly

Relative Sensitivity [dBV/Pa]

Black curve: target frequency response (ref
„ Green package (260°C) 1kHz)
„ Integrated EMI filtering 10

„ 2kV ESD protection (HBM) 5

„ Small size: 4.72x3.76x1.25mm3
0
„ Part number: MM 310 E6433
„ Sales code: SP000267598 -5

Characteristics -10
Red curves: maximum deviation from
target
Parameter Typical Unit Conditions -15
Value 100 1000 10000
Frequency [Hz]
Sensitivity -42 dBV/Pa 1 kHz, 94 dB SPL
Input-Referred 28.5 dB 1 Pa, psophometrically
Noise weighted Focus application
Signal to Noise 59 dB(A) 1 Pa, A-weighted
Maximum Sound 110 dB Total Harmonic Distortion ƒ Mobile phones
Pressure Level <3%
Supply Voltage 1.5 – 3.3 V Further applications
Current 70 µA
Consumption
Output < 100
ƒ Consumer
Impedance ƒ Notebooks
Output Drive <100 pF output (Pin 1) ƒ Cameras
Capability >10 k
ƒ Industrial
PSRR 65 dB
ƒ Automotive
© 2007 Infineon Technologies AG. All rights reserved. Page 185
Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 186

Problematic issues faced at operating LEDs
> LED Drivers

1 Inhomogenous light emission in LED branches

in comparison to each other
Æ due to statistical variations of LED properties like forward
voltage of up to + 20% the current variation in LED branches
can be very high

2 Variation of brightness of all LED branches

Æ due to fluctuations of the voltage supply

3 Degradation of light emission of LEDs

Æ due to thermal overload or even thermal runaway connected
with the decline of the forward voltage of LEDs vs temperature

4 Increased cost of customers for LEDs

Æ due to required binning for same forward voltage VF besides
brightness and colour temperature index (CRI)

© 2007 Infineon Technologies AG. All rights reserved. Page 187

Countermeasures against problems in operating LEDs
1st option: pure resistor biasing
> LED Drivers

Typical setup without LED driver

VS
(=5V...
18V)
RLin
resistor to define bias current

+ inhomogenous light emission can be solved,

- but at the cost of high voltage drop
- brightness variations due to fluctuations of Vs remains
- danger of degradation due to thermal overload of LEDs remains

Conclusion:
Æ high voltage drop can result in less number of LEDs in respective branches
Æ thermal overload can lead to degradation of LEDs neutralizing
the selling argument of long life expectancy of LEDs
Æ cheapest countermeasure, but doesn’t solve most critical problems of
operating LEDs

© 2007 Infineon Technologies AG. All rights reserved. Page 188

Countermeasures against problems in operating LEDs
2nd option: voltage regulator in addition to resistor biasing
> LED Drivers

additional voltage regulator

VS
(=5V...
18V)
RLin
resistor to define bias current

+ inhomogenous light emission can be solved, but

- at the cost of high voltage drop
+ brightness variations due to fluctuations of Vs , but
- at the cost of 0,15 USD and
- danger of degradation due to thermal overload of LEDs remains
Conclusion:
Æ high voltage drop can result in less number of LEDs in respective
branches
Æ thermal overload can lead to degradation of LEDs neutralizing
the selling argument of long life expectancy of LEDs
Æ despite significant cost adder, still most critical problems of operating LEDs
remain unsolved

© 2007 Infineon Technologies AG. All rights reserved. Page 189

Countermeasures against problems in operating LEDs
3rd option: linear mode LED driver from Infineon
> LED Drivers

+ inhomogenous light emission can be solved with controller in each branch

+ low voltage drop
+ brightness variations due to fluctuations of Vs solved by controller
+ danger of degradation due to thermal overload of LEDs solved due to
negative temperature coefficient of LED driver
+ no voltage regulator required

Conclusion:
Æ Most critical problems of operating LEDs solved at reasonable cost

© 2007 Infineon Technologies AG. All rights reserved. Page 190

Linear mode LED-drivers from Infineon
BCR 4xx in SOT143R, SOT343 and SC74
> LED Drivers

Benefits
Supply Voltage • Low cost and by far superior solution to
LED Driver resistor based solutions
BCR4XX • Output current adjustable by usage of
external resistor from 10mA to 60mA
• Suitable for Pulse Width Modulation
(PWM), possibility of LED dimming
Control • Negative temperature coefficient serves
circuit
Rint
as protection for LEDs at
higher temperatures

REXT Application Note

Sense
(optional) • AN066

Control

LEDs
ON /
OFF

© 2007 Infineon Technologies AG. All rights reserved. Page 191

Overview of general purpose linear mode LED drivers
> LED Drivers

Application Package Vcc, max Id,typ Id,max Vdrop Ptot RthJS Samples

low current mass

BCR401R SOT143R 18V 10mA 60mA 1.2V 330mW 190K/W
LED Driver production

universal LED mass

BCR402R SOT143R 18V 20mA 60mA 1.4V 330mW 190K/W
Driver production

low current samples

NEW! BCR401W SOT343 18V 10mA 60mA 1.2V 500mW 110K/W
LED Driver available

universal LED samples

NEW! BCR402W SOT343 18V 20mA 60mA 1.4V 500mW 110K/W
Driver available

samples
med. current
Brand NEW!BCR401U LED Driver
SC74 40V 10mA 65mA 1.4V 500mW 65K/W available
in April

med. current mass

BCR402U SC74 40V 20mA 65mA 1.4V 500mW 65K/W
LED Driver production

high current mass

BCR405U SC74 40V 50mA 65mA 1.5V 500mW 65K/W
LED Driver production

Æ 3 new products added into the portfolio closing the gap

© 2007 Infineon Technologies AG. All rights reserved. Page 192
Application Note – AN101
Driving high current LED’s using BCR401R
> LED Drivers

Features
• High LED currents of up to 700mA, but
sweet spot from 65mA to 400mA,
BCR401R as Controller mainly for 0,5W & 1W LEDs)

Benefits
• Reasonable overall system cost
• Stable light emission
• Suitable for Pulse Width Modulation
(PWM), possibility of LED dimming
• Negative temperature coefficient serves
as protection for LEDs at higher
temperatures

Recommended Power Transistors

• BCX65-25 (in SOT89 package), in
mass production
• BC817SU (in SC74 package,
samples available)

© 2007 Infineon Technologies AG. All rights reserved. Page 193

Application Note – AN101:
70% efficiency for driving LED’s with linear solution
> LED Drivers

Pie Chart showing power dissipation in circuit elements.

Note that ~ 70% of the available power (4008mW) is consumed in the Light Emitting Diodes.

Power Dissipation Budget, LED Driver Application Board +12V

Supply, 334mA LED Current
( Three 1-Watt LEDs, White OSRAM "Golden Dragon" LW W5SM )

Schottky Diodes D1 and D3

(Reverse Polarity Protection)
Sense Resistor R1
(Determines LED current)
LEDs D5, D6, D7

Booster Transistor Q1

Base Resistor R2

BCR401R LED Driver IC

© 2007 Infineon Technologies AG. All rights reserved. Page 194

Application Note – AN101:
Driving high current LED’s using BCR401R
> LED Drivers

© 2007 Infineon Technologies AG. All rights reserved. Page 195

High Precision Controller for High Brightness LED´s -
BCR450
> LED Drivers
Features
• Typ. 150mV voltage drop across Rsense
• Current variation smaller than +/- 10%
over the whole operating temperature
range (-25 to 125°C)
• Microcontroller enable input for PWM, no
Digital Transistor required
• Thermal shutdown (Tj = 150 ... 180 °C)
• Operates up to 27 V

Benefits
• Lower part count
Æ no digital transistor needed for
microcontroller enable input for PWM
Æ no capacitors needed to prevent
oscillating
• Higher number of LEDs in one branch due
to low voltage drop
• Protection of LEDs due to thermal shutdown
• LED brightness constant over the temp range

Recommended Power Transistors

• BCX65-25 (SOT89)
• BC817SU (SC74, samples available)
• Samples for LED controller, April 2007,
• Volume, starting mid 2007

© 2007 Infineon Technologies AG. All rights reserved. Page 196

Comparison High Current LED controller solutions
Low cost BCR401R vs NEW medium cost BCR450
> LED Drivers

Application Note - AN101

based on existing products NEW!!! – Volume mid 2007
BCR401R BCR450
ƒ Æ Voltage overhead ƒ Æ Voltage overhead
min. 1.1V, using external power stage, min. 0.4V, using external power stage,
Vref = 0.85 V Vref = 0.15 V
ƒ Æ Precision of Iout: ƒ Æ Precision of Iout:
ƒ +10% initial (@ Vs = 10V; Tj = 25°C) ƒ +/- 10% in whole operating range
ƒ + Vsupply variation (1 %/V) (Vsupply; Tj)
ƒ + temperature coefficient
( -0.2 %/K) ƒ Æ Thermal shutdown to protect
lamp modules from thermal
overstress
ƒ Æ Microcontroller compatible
‚enable input‘ for PWM operation

© 2007 Infineon Technologies AG. All rights reserved. Page 197

Demo Board for High Current Applications
using BCR450
> LED Drivers

BCR450
optional: LUMILED LUXEON

optional: Booster Transistors

BC817SU
OSRAM Golden Dragon

Booster Transistors BCX68-25

optional: OSRAM PowerTop-LED

optional: Advanced OSRAM PowerTop-LED

© 2007 Infineon Technologies AG. All rights reserved. Page 198

Summary
> LED Drivers

„ Infineon small signal discretes offers a range of low cost LED drivers from
10mA up to 700mA

„ LED drivers can be used either

Æ as standalone drivers for currents 10mA to 65mA or
Æ as LED controller in combination with a booster transistor
for currents from 65mA up to 700mA see AN101

„ Main applications so far are

Æ neon bulb replacement for signage / advertising & accent lighting
Æ side markers at trucks, low cost applications in cars,
Æ big LED displays etc
Æ further cost sensitive applications

„ The Infineon portfolio was further complemented by three new products,

BCR401W, BCR402W and BCR401U in the low cost segment

„ For higher requirements for LED drivers the new BCR450

Æ low voltage drop / high precision LED controller will be available in
volume from mid 2007,samples available in April 2007

© 2007 Infineon Technologies AG. All rights reserved. Page 199

Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 200

Table of Contents

„ AF Discretes

„ Introduction

„ Digital Transistors

„ General Purpose Transistors

„ General Purpose Diodes

© 2007 Infineon Technologies AG. All rights reserved. Page 201

Our Core Know-how is Used Across Many Applications
> AF Discretes > Introduction

Autmotive
Consumer
Digital
Digital
Transistors
Transistors
Safety Disc
Disc Drives
Drives
Power train PCMCIA
PCMCIA
GP Modems
Infotainment GP Transistors
Transistors Modems
TV/VCR-Chassis
… TV/VCR-Chassis
Set-Top
Set-Top Box
Box
GP
GP Diodes
Diodes Digital
Digital Still
Still Camera
Camera
Camcorder
Camcorder
Portable
Portable Audio
Audio
Motherboards
Motherboards
MP3
MP3
…
…

Communication

Cordless Phones
Mobile Phones
Base Stations
Disc Drives
PCMCIA
Modems
…

© 2007 Infineon Technologies AG. All rights reserved. Page 202

AF small signal discretes with higher value proposition
> AF Discretes > Introduction

Digital transistors
ƒ 500mA digital transistors in SOT23 like BCR503, BCR521, BCR583 etc)

AF transistors
ƒ Current mirror applications (BCV61 / BCV62)
ƒ Precision matched current mirror (BCM846S / BCM856S)
ƒ High voltage applications (BCV26,27,46,47 & BCX41,42)
ƒ High current transistors (BDP9x)

AF diodes
ƒ Low leakage diodes (BAS116, BAV170, 199, BAW156)
ƒ BAS28 & BAW101 in SOT143 and BAS28W SOT343
ƒ High reverse voltage BAW78 & BAW79
ƒ Bridge rectifier BGX50A

General
ƒ Double die packages SOT363 & SC74 like BAV99S, BC847PN, BCR133S,
BAS21U, BC817UPN, BC807U, BCR523U, and many others)

Æ Look for applications for these products and

promote strongly these products

© 2007 Infineon Technologies AG. All rights reserved. Page 203

Table of Contents

„ AF Discretes

„ Introduction

„ Digital Transistors

„ General Purpose Transistors

„ General Purpose Diodes

© 2007 Infineon Technologies AG. All rights reserved. Page 204

Value proposition with Digital Transistors
GP Transistors with Built-in Resistor Network
> AF Discretes > Digital Transistors

Higher value proposition

ƒ Double die packages SOT363 & SC74 like BCR133S, BCR08PN,

BCR523U etc)
Main application: Automotive, Industry other
Major competition: Rohm, NXP, ON Semi

ƒ 500mA single die package SOT23 like BCR503, BCR521, BCR583

etc)
Main application: Automotive, Industry other
Major competition: Rohm, NXP, ON Semi

Æ 1st priority for promotion

100mA single die package SOT23 like BCR108, BCR133, BCR183 etc)
Main application: Automotive, Industry other
Major competition: Rohm, NXP

Æ 2nd priority for promotion

© 2007 Infineon Technologies AG. All rights reserved. Page 205

Digital Transistors Single Chip Versions
> AF Discretes > Digital Transistors

SOT23 SOT323 SOT23

R1 R2 V C80 50V, I C 100mA V C80 50V, I C 100mA V C80 50V, I C 100mA
(kOhm) (kOhm) npn pnp npn pnp npn pnp

100 100 --- --- --- --- --- ---

2.2 2.2 BCR103 BCR153 --- --- BCR503 BCR553
2.2 10 --- --- --- * --- BCR505 BCR555
2.2 47 BCR108 BCR158 BCR108W BCR158W --- ---
4,7 4.7 BCR112 BCR162 BCR112W --- --- ---
4,7 10 BCR114 --- --- --- --- ---
4,7 47 BCR116 BCR166 BCR116W BCR166W --- ---
4,7 BCR119 BCR169 BCR119W BCr169W --- ---
1 1 --- --- --- --- BCR521 BCR571
1 10 --- --- --- --- BCR523 BCR573
10 BCR129 --- BCR129W --- --- ---
10 10 BCR133 BCR183 BCR133W BCR183W BCR533 BCR583
10 47 BCR135 BCR185 BCR135W* BCR185W
* * ---* ---
22 BCR139 BCR189 --- --- --- ---
22 22 BCR141 BCR191 BCR141W BCR191W --- ---
22 47 BCR142 BCR192 BCR142W BCR192W --- ---
47 22 BCR146 BCR196 BCR146W BCR196W --- ---
47 47 BCR148 BCR198 BCR148W BCR198W --- ---
47 --- --- --- --- --- ---

Not listed resistor values / combinations can be offered on demand

© 2007 Infineon Technologies AG. All rights reserved. Page 206
Digital Transistors Multichip Versions
> AF Discretes > Digital Transistors

SOT363 SC74
Dual digital [VCE0 50V ; Dual digital VCEO50V;
R1 R2 transistor array IC 100mA] transistor array IC 500 mA
[kOhm] [kOhm] 2 * npn 2 * pnp npn + pnp 2 * npn 2 * pnp npn + pnp
2,2 2,2
2,2 47 BCR108S BCR08PN
4,7 4,7
4,7 47 BCR116S
4,7 BCR119S BCR169S
1 10 BCR523U
10 BCR129S
10 10 BCR133S BCR183S BCR10PN
10 47 BCR135S BCR185S BCR35PN
22
22 22 BCR141S BCR22PN
22 47
47 22
47 47 BCR148S BCR198S
47 47 npn BCR48PN composite versions
2,2 47 pnp low Vcesat switch
Not listed resistor values / combinations can be offered on demand

© 2007 Infineon Technologies AG. All rights reserved. Page 207

Table of Contents

„ AF Discretes

„ Introduction

„ Digital Transistors

„ General Purpose Transistors

„ General Purpose Diodes

© 2007 Infineon Technologies AG. All rights reserved. Page 208

Higher value proposition
with General Purpose Transistors
> AF Discretes > General Purpose Transistors

Higher value proposition

ƒ Double die packages SOT363 & SC74
(BC846S, BC847PN, BC817UPN, BC807U etc)
Main application: Automotive, Industry other
Major competition: NXP, ON Semi, other

ƒ Current mirror applications (BCV61 / BCV62)

Main application: Automotive, Industry other
Major competition: NXP, ON Semi, other

ƒ Precision matched current mirror (BCM846S / BCM856S)

Main application: Automotive, Industry other
Major competition: NXP

ƒ High voltage applications (BCV26,27,46,47 & BCX41,42)

Main application: Automotive, Industry other
Major competition: NXP

ƒ High current transistors (BDP9x)

Main application: Telecommunication
Major competition: Zetex

Æ 1st priority for promotion

© 2007 Infineon Technologies AG. All rights reserved. Page 209
General Purpose AF Transistors
> AF Discretes > General Purpose Transistors

Package SOT89 SOT223 SOT23 SOT323 SOT143 SOT363 SC74

Current BCV61 BC846S
Mirror BCV62 BC856S
Precision matched current BCM846S
mirror BCM856S
BCW60FF
Low Noise Transistors
BC850B
(Noise Figure <4dB@1kHz)
General Purpose AF Transistors

BC860B
Darlington (hFE>2000) BCV29/49 BCP49 BCV27
BCV28/48 BCV26
BSP5x BCV47
BSP6x BCV46
PZTA14 SMBTA14
Fast switching SMBT3904 SMBT3904S SMBT3904U
(Storage time <1µs) SMBT3906 SMBT3906S SMBT3906U
SMBT3904PN SMBT3904UPN
High Voltage BFN18 BFN38 BCX41
(VCEO>100V) BFN19 BFN39 BCX42
PZTA42 BFN24/26
PZTA92 BFN27
SMBTA42/MMBTA42
SMBTA92/MMBTA92
General Purpose- BDP9xx BC81x BC81xW BC817U
BDP9xx BC80x BC80xW BC807U
BCX5x BCP5x BC84x BC84xW BC84xS BC817UPN
BCX5x BCP5x BC85x BC85xW BC85xS BC817SU
BCX68 BCW6x BC846U
BCX69 BCW6x BC856U
BC846UPN
SMBTA06UPN
NPN-Type PNP-Type

© 2007 Infineon Technologies AG. All rights reserved. Page 210

BCM846S / BCM856S
Matched Dual Transistor Arrays
> AF Discretes > General Purpose Transistors

Features
ƒ ±10% ǻIc matching in current mirror
circuit
ƒ Vce0 > 65 V
ƒ Ic = 100 mA
ƒ hFE = 200 – 450

Ideal for:
ƒ Current mirror circuits
ƒ Current-sense applications
ƒ Discrete Voltage regulators

Available as:
ƒNPN (BCM846S) and PNP (BCM856S)
ƒSmall footprint (SOT363)
ƒApplication slides available
SOT363 package

© 2007 Infineon Technologies AG. All rights reserved. Page 211

Table of Contents

„ AF Discretes

„ Introduction

„ Digital Transistors

„ General Purpose Transistors

„ General Purpose Diodes

© 2007 Infineon Technologies AG. All rights reserved. Page 212

General Purpose Diodes
> AF Discretes > General Purpose Diodes

Functionalities
ƒ Rectifier
ƒ Switching / High Speed switching
ƒ Circuit protection

Requirements
ƒ High voltage diodes (VR)
ƒ Low leakage current (IR)
ƒ High variation of allowable current (IF)
ƒ Fast recovery time (trr)
ƒ Small diode capacitance (CT)
ƒ Small packages and more elements / package

© 2007 Infineon Technologies AG. All rights reserved. Page 213

Broad AF Diode product portfolio
Customer can optimize Reverse Current vs Reverse Voltage
> AF Discretes > General Purpose Diodes

High value proposition,

(at 25°C) Leakage current vs. Reverse voltage Less commoditizied market

10

SOT23 SOT89

SOT23
1 BAL99 BAW78/79D
SOT23 SMBD914/7000
SOT23
SOT23,
BAL/R 74
IR (µA)

SOT143 BAW101
0,1 BAS21
BAS16/28,
BAV70/99, BAW56

0,01 BAS116,
BAV170/199,
SOT23
BAW156

0,001
0 50 100 150 200 250 300 350 400 450 500
VR (V)

© 2007 Infineon Technologies AG. All rights reserved. Page 214

Higher value proposition
with General Purpose Diodes
> AF Discretes > General Purpose Diodes

Higher value proposition

ƒ Multiple (>2) die packages SOT363 & SC74
(BAV70S, BAV99S, BAW56S, BAS16S, BAS21U etc)
Main application: Automotive, Industry other
Major competition: NXP, ON Semi, other

ƒ Low leakage diodes (BAS116, BAV170, 199, BAW156)

Main application: Automotive, Consumer, other especially high
temperature applications to limit leakage current
ex avoid battery discharge
Major competition: NXP

ƒ BAS28 & BAW101 in SOT143 and BAS28W SOT343

Main application: Automotive, Industry other two galvanically
isolated diodes, BAS28 for 100V, BAW101 for
300V reverse voltage
Major competition: NXP

ƒ High reverse voltage BAW78 & BAW79 (400V, 1A)

Main application: Rectifier diode for Automotive, Industry other
Major competition: NXP

ƒ Bridge rectifier BGX50A

Main application: Rectifier for Automotive, Industry other
Major competition: NXP

Æ 1st priority for promotion

© 2007 Infineon Technologies AG. All rights reserved. Page 215
General Purpose Diodes Product Portfolio
> AF Discretes > General Purpose Diodes

Infineon offers a variety of General Purpose Diodes

ƒ Today > 60 types
ƒ Available in different packages and configurations
ƒ Customer can choose ideal product for specific application

High Speed switching Diodes VR ” 100V; IF ” 250mA; IR < 500 nA; trr< 4ns

Switching Diodes VR ” 300V; IF ” 250mA; IR < 150 nA; trr< 1µs

Low Leakage Diodes VR = 80V; IF ” 250mA; IR < 5nA; trr < 1.5µs

Rectifier Diodes VR = 400V; IF = 1A; IR < 1µA

Bridge Rectifier Diodes VR = 50V; VRM = 70V (peak); IF = 140mA

© 2007 Infineon Technologies AG. All rights reserved. Page 216

General Purpose Diodes
> AF Discretes > General Purpose Diodes

Application Power Supply

AC
Power DC
Supply
IC

BGX50A
EMI/EMC filter

Product Vrmax / V Ifmax / mA VBR / V IR / µA @ VR / V VF / V @ IF / mA rr

BGX50A 50 140 50 < 0.20 50 < 2.60 100 < 6.0 ns
BGX400 400 250 >400 < 1.00 400 < 2.00 2000 < 1.0 µs

© 2007 Infineon Technologies AG. All rights reserved. Page 217

General Purpose Diodes
> AF Discretes > General Purpose Diodes

SOT 143 / SOT 363 /

Device Family V R [V] I F [mA] Configuration SC 74
SC61 SC88

50 140 fullbridge rectifier BGX 50 A

g.p. diodes for 70 200 dual 2* comm. Cathode BAV 70 S BAV 70 U
rectifying and 75 250 Three parallel BAS 16 S BAS 16 U
switching & 70 200 dual 2* series connected BAV 99 S BAV 99 U
clamping 70 200 dual 2* comm. Anode BAS 56 S BAS 56 U
200 250 Three parallel BAS 21 U

6 5 4 6 5 4 6 5 4 6 5 4

1 2 3 1 2 3 1 2 3 1 2 3

© 2007 Infineon Technologies AG. All rights reserved. Page 218

Switching and Rectifier Diodes
> AF Discretes > General Purpose Diodes

IR
Product VRmax IFmax IFSmax VF @ IF CT trr
@VRmax

BAS21xx 200 V 250 mA 4.5 A < 100 nA < 1.25 V 200 mA < 5 pF < 50 ns
BAW101 300 V 250 mA 4.5 A < 150 nA < 1.3 V 100 mA 6 pF 1 µs
BAW78xx
400 V 1A 10 A < 1 µA < 1.6 V 1A 10 pF 1 µs
BAW79xx

Three basic types - Different packages and configurations !

Main Application: Switching, where high breakdown voltage is needed
Æ e.g. modems

© 2007 Infineon Technologies AG. All rights reserved. Page 219

Low Leakage Diodes
> AF Discretes > General Purpose Diodes

IR
Product VRrmax IFmax IFSmax VF @ IF CT trr
@VR=75V

BAS116
BAW156 200 ...
80 V 4.5 < 5 nA < 1.25 V 150 mA 2 pF < 3 µs
BAV170 250 mA
BAV199

One basic type - Different packages and configurations !

Main Application: Low leakage switching applications especially high
temperature applications

© 2007 Infineon Technologies AG. All rights reserved. Page 220

High Speed Switching Diodes
Mainly commodity parts
> AF Discretes > General Purpose Diodes

IR @
Product VRmax IFmax IFSmax VF @ IF CT trr
Vrmax

BAS16xx
BAS28xx
BAV70xx
BAV99xx
BAW56xx 50 ... 200 ... < 100 ... >1.00 ... 100 ...
BAR74
4.5 A < 2 pF < 4 ns
100 V 250 mA < 500 nA < 1.25 V 150 mA
BAL74
BAL99
SMBD914
SMBD7000

One basic type - Different packages and configurations !

Main Application: High Speed Switching

© 2007 Infineon Technologies AG. All rights reserved. Page 221

Summary AF discretes
> AF Discretes

• Not all AF products are pure commodity, there are some products that
offer higher value to customer

• For AF discretes rather than small packages like SC75, TSFP & TSLP
double / triple die packages seem to provide higher value to the customer
like saving board space

• Also current mirror applications, higher voltage and high current or high
power components seem to be less commoditized and herewith under
less price pressure

© 2007 Infineon Technologies AG. All rights reserved. Page 222

Table of Contents

„ Applications

„ RF Discretes

„ Schottky Diodes

„ HiPAC, TVS Diodes, Silicon Mircrophone

„ LED Drivers

„ AF Discretes

„ General Information

© 2007 Infineon Technologies AG. All rights reserved. Page 223

Table of Contents

„ General Information

„ Packages

„ Internet Navigation

„ Application Notes

„ Nomenclature

„ MatQ

© 2007 Infineon Technologies AG. All rights reserved. Page 224

Packages for Silicon Discretes
> General Information > Packages

A5 A4 A3 A2 A1

B5 B4 B3 B2 B1
WLP

C5 C4 C3 C2 C1

D5 D4 D3 D2 D1

E5 E4 E3 E2 E1

0.13 mm

S-WLP-11 (2116) S-WLP-8 (1616) S-WLP-10 (20165) S-WLP-16 S-WLP-25

Leadless

TSLP-2-1 TSLP-4-4 TSLP-2-7 (RH*) TSSLP-2

TSLP-4-3
TSLP-7-4
TSLP-3-7/8 (RH*) TSLP-16
TSLP-3-1/4 TSLP-6-1 TSLP-4-7 (RH*) TSLP-3-9 (LH)** * Reduced Height 0.4mm max.
TSLP-7-1 ** Low Height 0.32mm max.
Flatlead

SCD80 SC79 TSFP-3 TSFP-4 TSSFP-3

SOT89
Gullwing

SOD323 SOT343 SC74

SOT23 SOT223 SOT323 SOT363 SC75

© 2007 Infineon Technologies AG. All rights reserved. Page 225
Diode packages on the way for smallest size
> General Information > Packages

20% height reduction

70% footprint reduction
TSLP-4-4
20% height reduction
TSLP-2-1

TSLP
TSLP-2/3/4
TSLP-RH
Package Height
TSLP-2/3/4-RH
0,50 mm max.

1,0 x 0,6 x 0,4 mm /

Reduced Height TSSLP
0,40 mm max. TSSLP-2
1,2 x 0,8 x 0,4 mm
1,0 x 0,6 x 0,39 mm /
Package Height

1,2 x 0,8 x 0,39 mm

0.32 mm max.

0,6 x 0,3 x 0,31 mm

2003 2004 2005

© 2007 Infineon Technologies AG. All rights reserved. Page 226
Table of Contents

„ General Information

„ Packages

„ Internet Navigation

„ Application Notes

„ Nomenclature

„ MatQ

© 2007 Infineon Technologies AG. All rights reserved. Page 227

Internet – Quick Online Navigation
> General Information > Internet Navigation

www.infineon.com/smallsignaldiscretes
www.infineon.com/rfmmics www.infineon.com/microphone

www.infineon.com/rfbipolartransistors www.infineon.com/esdprotection

www.infineon.com/digitaltransistors www.infineon.com/hipac

www.infineon.com/generalpurposetransistors www.infineon.com/tvsdiodes

www.infineon.com/rfmosfet www.infineon.com/lowcostleddriver

www.infineon.com/varactordiodes www.infineon.com/hirel

www.infineon.com/pindiodes

www.infineon.com/generalpurposediodes

www.infineon.com/schottkydiodes

© 2007 Infineon Technologies AG. All rights reserved. Page 228

Table of Contents

„ General Information

„ Packages

„ Internet Navigation

„ Application Notes

„ Nomenclature

„ MatQ

© 2007 Infineon Technologies AG. All rights reserved. Page 229

Application Notes
> General Information > Application Notes

Product Group AN - Number Title

General 022 Simple Microstrip Matching for all Impedances

General 077 Thermal Resistance Calculation
ESD / EMI Protection 079 ESD tests according to the Human Body Model (HBM)
ESD / EMI Protection 100 ESD Protection ESD8V0L series
Diodes 007 DECT (1.9 GHz) Transmit-Receive PIN-Diode Switch
Diodes 013 800-1000 MHz PIN-Diode Transmit-Receive Switch
Diodes 025 1400-1600 MHz PIN-Diode Transmit-Receive Switch
Diodes 033 GSM + PCN Dual-Band Transmit-Receive Switch
Diodes 034 Carrier Lifetime and Forward Resistance in RF PIN Diodes
Diodes 047 Matching Methods for Variable Capacitance Diodes
Diodes 049 DECT Transmit-Receive Switch Using Ultra Small PIN Diodes
Diodes 058 Predict Distortion in PIN-Diode Switches
Diodes 061 W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V
Diodes 065 Schottky Diodes for Clipping, Clamping and Transient Suppression Applications
Monolithic Ics 014 Application Considerations for the Integrated Bias Control BCR400R and BCR400W
Monolithic Ics 027 A 1.9 GHz Low Noise Amplifier Board using Si-MMIC BGA420
Monolithic Ics 030 A 1.9 GHz Low Noise Amplifier Board using Si-MMIC BGA427
Monolithic Ics 062 A Low Parts Count Low Noise Amplifier for GPS Applications using BGA428

© 2007 Infineon Technologies AG. All rights reserved. Page 230

Application Notes
> General Information > Application Notes

Product Group AN - Number Title

Monolithic Ics 063 A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428
Monolithic Ics 064 Using the BCR410W Bias Controller with BFP405 in Amplifier Circuits
Monolithic Ics 066 Constant Current LED Driver
Monolithic Ics 067 General Purpose Wide Band Driver Amplifer using BGA614
Monolithic Ics 069 The BGA622 SiGe Universal LNA MMIC in 1800 - 2500 MHz Receiver Applications
Monolithic Ics 086 ESD Protection (1: Simple protection structures, 2: BGA622 at 1.575 GHz)
Monolithic Ics 089 The BGA622L7 SiGe Universal Low Noise Amplifier MMIC in UMTS Receiver Applications
Monolithic Ics 090 The BGA622L7 SiGe Universal Low Noise Amplifier MMIC in GPS Receiver Applications
Monolithic Ics 091 BGA615L7 S11 improved
Monolithic Ics 093 BGA615L7 area improved
Monolithic Ics 098 MMICs for TV-tuner applications
Monolithic Ics 101 High current LED driver using BCR402U
Transistors 001 SIEGET 25 Low Noise Amplifier with BFP420 Transistor at 2.4 GHz
Transistors 002 SIEGET 25 Silicon Bipolar Dielectric Resonator Oscillator (DRO) at 10 GHz
Transistors 003 The Vceo-Mystery or How to use Low-Vceo-Transistors with High Operating Voltages
Transistors 008 Define a Small Signal RF-Transistor: S-Parameters, Noise Figure and Intermodulation
Transistors 015 Low Noise Amplifier Optimized for Minimum Noise Figure at 1.9 GHz using BFP420
Transistors 016 Low Noise Amplifier Optimized for Input and Output Return Loss at 1.9 GHz using BFP420
Transistors 017 A Low Noise Amplifier with good IP3out Performance at 1.9 GHz using BFP420

© 2007 Infineon Technologies AG. All rights reserved. Page 231

Application Notes
> General Information > Application Notes

Product Group AN - Number Title

Transistors 018 A Low Noise Amplifer at 900 MHz using SIEGET BFP420
Transistors 019 A Low Noise Amplifier with good IP3out Performance at 1.9 GHz using BFP405
Transistors 020 A Low Noise Amplifer at 1.9GHz using BFP405
Transistors 021 A Low Noise Amplifier shows good Noise Figure Perfomance at 1.9 GHz using BFP405
Transistors 023 Designing Oscillators with low 1/f-Noise
Transistors 024 Capacitances in Bipolar Junction Transistors
Transistors 026 A Medium Power Amplifier at 1.9 GHz using BFP450
Transistors 031 A Low Noise Amplifier at 1.9 GHz offers +14 dBm Input Intercept Point
Transistors 050 A Power Amplifier Module at 1.9 GHz using BFP450 and BFP490
Transistors 051 SIEGET 45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz
Transistors 057 A 1.9 GHz Low Noise Amplifer Optimized for High IP3 using BFP540
Transistors 060 A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using BFP620
Transistors 061 W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V
Transistors 075 High Third-Order Input Intercept Point CDMA 800 Low Noise Amplifier
Transistors 082 A Low-Cost, Two-Stage Low Noise Amplifier for 5 - 6 GHz Applications Using BFP640
Transistors 095 Evaluation report and application guide for low-voltage-capable RF MOSFET BF5030W
Transistors 099 315 MHz Oscillator Solution for Remote Keyless Entry System using BFR182

© 2007 Infineon Technologies AG. All rights reserved. Page 232

Table of Contents

„ General Information

„ Packages

„ Internet Navigation

„ Application Notes

„ Nomenclature

„ MatQ

© 2007 Infineon Technologies AG. All rights reserved. Page 233

Nomenclature –
Type Designation Guide Discretes
> General Information > Nomenclature

Diodes

BA… PIN / Switching diodes, mainly for Consumer market

BB… Varactor diodes, mainly for Consumer market
BAR… PIN diodes, mainly for Mobile Comm market
BAS…/ BAT… Schottky diodes
BBY… Varactor diodes for VCO application
ESD… TVS and ESD protection diodes

Varactor Diodes Tuner Applications

SOD323 SCD80 SC79

BB639 ĺ +20 = BB659 + ext.02V BB659-02V

BB535 ĺ +20 = BB555 + ext.02V BB555-02V
… … …

© 2007 Infineon Technologies AG. All rights reserved. Page 234

Nomenclature –
Type Designation Guide Discretes
> General Information > Nomenclature

Transistors

BF… RF MOSFETs or Bipolar Transistor. Mainly for consumer application

BG… Dual RF MOSFETs in SOT363
BFR… RF Bipolar Transistor in SOT23
BFP… RF Bipolar Transistor in SOT143
BFS… Dual RF Bipolar Transistor in SOT363
BFG… RF Bipolar Transistor in SOT223
BFQ… RF Bipolar Transistor in SOT89
BGA RF MMICs
BC… AF Transistor
BCR… AF Transistor with built in resistors (=Dual Transistor)
BCR1xx = 100mA types, BCR5xx = 500mA types.
(<150 = NPN; >149 = PNP)
BCR4…. AF Small Scale Integrated Cicuits SSIC
SIEGET® BFP4xx, BFP5xx series (Siemens Grounded Emitter Transistor)
SiGe BFP6xx series (Silicon Germanium Transistor)
SiGe:C BFP7xx series (Silicon Germanium Carbon Transistor)

© 2007 Infineon Technologies AG. All rights reserved. Page 235

Nomenclature –
Type Designation Guide Discretes
> General Information > Nomenclature

Extensions

R Reverse pining
!!! SOT343 is always in reverse pining, i.e. there is no e.g. BF2030RW !!!
W Next smaller package e.g. BFR181 (SOT23) ĺ BFR181W (SOT323)
!!! SIEGETs are in SOT343 but have no “W” as there are no SIEGETs in SOT143 !!!
S SOT363 package
T SC75 package
U SC74 package
F Flat lead package (TSFP3/4)
RH Reduced Height version of TSLP package (max. 0.4 mm)
L3LH Low Height version of 3pin transistor TSLP package (max. 0.32 mm max.)
L3 / L4 / L6 Leadless Package TSLP3 / TSLP4 / TSLP6
-02V / -02W Diodes in SC79 / SCD80 package
-02L / -02LRH / -02LS Diodes in TSLP2 / TSLP2-RH / TSSLP package
-07LRH/098LRH/099LRH Dual Diodes in TSLP4-RH package
-03W SOD323 package (for IT and AF diodes)
-04 / 05 / 06 Dual diodes in SOT23 package (series/com. cath/com. anod.)
-04W / 05W / 06W Dual diodes in SOT323 package (series/com. cath/com. anod.)
-07 / -07W Dual diodes in SOT143 / SOT343 package (parallel)
PN Dual transistors (1pnp + 1 npn) in one package

Further extensions for AF components

A, B, C, … or Current gain groups (same chip), e.g. BC846A, BC846B,…

-16, -25, -40

© 2007 Infineon Technologies AG. All rights reserved. Page 236

Table of Contents

„ General Information

„ Packages

„ Internet Navigation

„ Application Notes

„ Nomenclature

„ MatQ

© 2007 Infineon Technologies AG. All rights reserved. Page 237

MatQ - Product Material Declaration
> General Information > MatQ

How are materials declared?

ƒ Substances and materials contained in IFX products are declared via Umbrella
Specification (U-Spec) in accordance to IEC 61906

ƒ The U-Spec declares full materials present in Infineon

product(s) in concentrations above 0.1 % by weight (1000 ppm).

ƒ Trace concentrations of materials (i.e. those < 0.1 % by weight) present in products
are marked with an "X" if they are intentionally added substances-of-concern
(e.g. CEFIC-EECA-EICTA).

How to obtain U-Specs?

ƒ Please contact your Infineon Sales interfacing unit

© 2007 Infineon Technologies AG. All rights reserved. Page 238

RoHS Compliance
> General Information > MatQ

Infineon products DO NOT contain

Chromium-VI (Cr-VI) Cr Cadmium (Cd) Cd Mercury (Hg) Hg

polybrominated diphenylethers (PBDE)

polybrominated biphenyls (PBB)

in compliance with the RoHS Directive (2002/95/EC).

Lead (Pb) Pb

is currently being phased out in our Green conversion strategy

(www.infineon.com – product – packages)

© 2007 Infineon Technologies AG. All rights reserved. Page 239

Declarations
> General Information > MatQ

What declarations and statments are currently available?

Declaration of non-use of substances of concern

RoHS Declaration

Umbrella Spec or Material Content Data Sheet

Declaration of RoHS compliance throughout the supply chain

For these, please contact your Infineon interfacing unit

www.infineon.com/matq

© 2007 Infineon Technologies AG. All rights reserved. Page 240

Edition 2007-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

© 2007 Infineon Technologies AG. All rights reserved. Page 241

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Published by Infineon Technologies AG NB07-1094