,,

2N5583

PNP SILICON HIGH-FREQUENCY TRANSISTOR

. . . designed for applications in high frequency amplifiers and non-

saturated switching circuits. High gain-bandwidth product charac
teristic provides excellent performance in a variety of small signal
and linear amplifier applications,

[R 1A B

2
0
1003

(
D
A -.
STYLE 1
Q *G FINl. EMITTER

All JEDEC dimensions and notes apply.

CASE 79-02
TO-39

) MOTO~OLA INC., 1974 DS 53

 ,; f.
(VEB 2. OVdc, Ic= O) ~
1 1

*ON CHARACTERISTICS ,.
DC Current Gain (Note 1)
,, (1c = 40 mAdc, VCE = 2.0 Vdc) f
,,, ~ (1c = 100mAdc, VCE = 2.0 Vdc)
,,
~ (Ic = 300 mAdc, VCE = 5.0 Vdc) I
,.
Collector-Emitter Saturation Voltage (Note 1) 2.!,3 1..v@G7:;+\
,. 0.6 0,8 Vdc
~.
( (lc= 100mAdc, IR= 10mAdc)
I I I I 3s..
0.84 1.8 Vdc

J I I

,-, MOTOROLA Semiconductor products Inc. (M)

~ -
 i

FIGURE 1 -DC CURRENT GAIN FiGuRE 2 coLLEcTOR dATuRATiON REGION

100

70

7.0

5.0
3.0 5.0 7,0 10 20 30 50 70 100 200 300

Ic,COLLECTOR CURRENT (mA)

FIGURE 3 ON VOLTAGES
2.8 .,s!;, **?k
:i:, 2 5k vcE=15v
JP.\*$
2.4
,.,,..,
_ I ! ,,
,.*,,
a 1k I I I ! J ! I!- !
TA = 1750C .
~ 2.0 : 500
I 1 1 ! ! 1 1 1 1 II , , 1 1

I , i t 1 1 1 ! t 1 ! !
L 10

~ 5.0
$ 0.8 :.. I I I I I [ 1 1 I [/ ! 1 I

?.0 I I I r ! 1
G
0.4
0.5
1 1 1 1 1 1 1 I [ 1 1
0.2 [ I I
0 nl
I ( 1 I ( 1 1 1

MOTOROLA Semiconductor Products inc.

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\) MO, TOROLA,, Semiconductor .Produ,cts Inti.