4N32/4N33

Vishay Semiconductors

Optocoupler, Photodarlington Output,

High Gain, with Base Connection
FEATURES
• Very high current transfer ratio, 500 % min.
1 6 B
A
• High isolation resistance, 1011 Ω typical
C 2 5 C • Standard plastic DIP package
• Lead (Pb)-free component
NC 3 4 E
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
i179005

AGENCY APPROVALS
DESCRIPTION • UL1577, file no. E76222 system code A
The 4N32 and 4N33 are optically coupled isolators with a • DIN EN 60747-5-5 available with option 1
gallium arsenide infrared LED and a solicon photodarlington • BSI IEC 60950; IEC 60065
sensor.
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high speed
switching and elimination of magnetic fields.

ORDER INFORMATION
PART REMARKS
4N32 CTR > 500 %, DIP-6
4N33 CTR > 500 %, DIP-6

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 55 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 30 V
Emitter base breakdown voltage BVEBO 8.0 V
Collector base breakdown voltage BVCBO 50 V
Emitter collector breakdown voltage BVECO 5.0 V
Collector (load) current IC 150 mA
Power dissipation Pdiss 150 mW
Derate linearly 2.0 mW/°C

Document Number: 83736 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com

Rev. 1.5, 07-May-08 147
4N32/4N33
Vishay Semiconductors Optocoupler, Photodarlington Output,
High Gain, with Base Connection

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

COUPLER
Total dissipation Ptot 250 mW
Derate linearly 3.3 mW/°C
Isolation test voltage VISO 5300 VRMS
Leakage path 7.0 mm min.
Air path 7.0 mm min.
VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
Isolation resistance
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature Tstg - 55 to + 125 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time (2) at 260 °C 10 s
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.

ELECTRICAL CHARACTERISTICS (1)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF 1.25 1.5 V
Reverse current VR = 3.0 V IR 0.1 100 µA
Capacitance VR = 0 V CO 25 pF
OUTPUT
Collector emitter breakdown voltage (2) IC = 100 µA, IF = 0 BVCEO 30 V
Collector base breakdown voltage (2) IC = 100 µA, IF = 0 BVCBO 50 V
Emitter base breakdown voltage (2) IC = 100 µA, IF = 0 BVEBO 8 V
Emitter collector breakdown voltage (2) IC = 100 µA, IF = 0 BVECO 5 10 V
Collector emitter leakage current VCE = 10 V, IF = 0 ICEO 1.0 100 nA
COUPLER
Collector emitter saturation voltage VCEsat 1.0 V
Coupling capacitance 1.5 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered values.

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio VCE = 10 V, IF = 10 mA CTR 500 %

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time VCC = 10 V, IC = 50 mA ton 5.0 µs
Turn-off time IF = 200 mA, RL = 180 Ω toff 100 µs

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83736

148 Rev. 1.5, 07-May-08
 4N32/4N33
Optocoupler, Photodarlington Output, Vishay Semiconductors
High Gain, with Base Connection

SAFETY AND INSULATION RATINGS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
55/100/21
(according to IEC 68 part 1)
Comparative tracking index CTI 175 399
Peak transient overvoltage VIOTM 6000 V
Peak insulation voltage VIORM 850 V
Safety rating - power output PSO 265 mW
Safety rating - input current ISI 130 mA
Safety rating - temperature TSI 150 °C
Creepage distance standard DIP-6 7 mm
Clearance distance standard DIP-6 7 mm
Creepage distance 400 mil DIP-6 8 mm
Clearance distance 400 mil DIP-6 8 mm
Insulation thickness,
per IEC 60950 2.10.5.1 0.4 mm
reinforced rated
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.

TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified

1.2 10
Normalized to: Normalized to: VCE = 5 V
NCTRCE - Normalized CTRCE

1.0 VCE = 5 V VCE = 5 V

NICE - Normalized ICE

IF = 10 mA 1 IF = 10 mA
0.8 TA = 25 °C TA = 25 °C VCE = 1 V

VCE = 5 V
0.6 0.1

0.4
0.01
0.2
VCE = 1 V
0.0 0.001
0.1 1 10 100 1000 0.1 1 10 100
i4n32-33_02 IF - LED Current (mA) i4n32-33_03 IF - LED Current (mA)

Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs. Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
LED Current Current vs. LED Current

Document Number: 83736 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com

Rev. 1.5, 07-May-08 149
4N32/4N33
Vishay Semiconductors Optocoupler, Photodarlington Output,
High Gain, with Base Connection

10 20
Normalized to:

tpHL - High/Low Propagation

VCB = 3.5 V 1 kΩ TA = 25 °C
NICB - Normalized ICB

1 IF = 10 mA 15 VCC = 5 V
VTH = 1.5 V

Delay (µs)
TA = 25 °C

0.1 10

100 Ω
0.01 5

0.001 0
0.1 1 10 100 0 5 10 15 20
i4n32-33_04 IF = LED Current (mA) i4n32-33_07 IF - LED Current (mA)

Fig. 3 - Normalized Collector Base Photocurrent vs. Fig. 6 - High to Low Propagation Delay vs.
LED Current Collector Load Resistance and LED Current

10000
TA = 25 °C VCE = 5 V
hFE - Forward Transfer Gain

8000
IF

6000
VCC
RL

4000
tD
tR VO
VO
VCE = 1 V tPLH
IF
2000
VTH=1.5 V
0 tPHL tS tF
0.01 0.1 1 10 100
i4n32-33_08
i4n32-33_05 Ib - Base Current (µA)
Fig. 4 - Non-Saturated and Saturated hFE vs.
Base Current Fig. 7 - Switching Waveform and Switching Schematic

80
TA = 25 °C, VCC = 5 V
1 kΩ
tpLH - Low/High Propagation

VTH = 1.5 V
60
Delay (µs)

220 Ω
40

470 Ω
20

100 Ω
0
0 5 10 15 20
i4n32-33_06 IF - LED Current (mA)

Fig. 5 - Low to High Propagation Delay vs.

Collector Load Resistance and LED Current

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83736

150 Rev. 1.5, 07-May-08
 4N32/4N33
Optocoupler, Photodarlington Output, Vishay Semiconductors
High Gain, with Base Connection

PACKAGE DIMENSIONS in millimeters

For 4N32/33.... see DIL300-6 Package dimension in the package section.
For products with an option designator (e.g. 4N32-X007 or 4N33-X009).... see DIP-6 Package dimensions in the package section.
DIL300-6 Package Dimensions

8.8 max.
7.62 ± 0.1
B
8.6 max.
0.3 A
6.4 max.
4.2 ± 0.1

0.5 min.

0.58 max. 3.3

0.3 max.
1.54

2.54 nom. 9 ± 0.6

0.4 B
5.08 nom.
A

6 5 4 Weight: ca. 0.50 g

Creepage distance: > 6 mm
Air path: > 6 mm technical drawings
after mounting on PC board according to DIN
specifications

14770
1 2 3

DIP-6 Package Dimensions

Pin one ID
3 2 1

0.248 (6.30)
0.256 (6.50)

4 5 6 ISO method A

0.335 (8.50)
0.343 (8.70)
0.300 (7.62)
0.039 0.048 (0.45)
typ.
(1.00) 0.022 (0.55)
min.
0.130 (3.30)
0.150 (3.81)

4° 18 °
typ. 0.114 (2.90)
0.031 (0.80) min. 0.130 (3.0)
0.010 (0.25)
0.031 (0.80) 3° to 9° typ.
0.018 (0.45)
0.035 (0.90)
0.022 (0.55) 0.300 to 0.347
0.100 (2.54) typ. (7.62 to 8.81)
i178004

Document Number: 83736 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com

Rev. 1.5, 07-May-08 151
4N32/4N33
Vishay Semiconductors Optocoupler, Photodarlington Output,
High Gain, with Base Connection

Option 7 Option 9
0.300 (7.62) 0.375 (9.53)
typ. 0.395 (10.03)

0.300 (7.62)
ref.

0.028 (0.7) 0.180 (4.6)

0.160 (4.1)
0.0040 (0.102)
0.0098 (0.249) 0.012 (0.30) typ.
0.315 (8.0)
min. 0.020 (0.51)
0.331 (8.4) 0.040 (1.02)
15° max.
min. 0.315 (8.00)
0.406 (10.3) min.
max. 18494

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83736

152 Rev. 1.5, 07-May-08
 4N32/4N33
Optocoupler, Photodarlington Output, Vishay Semiconductors
High Gain, with Base Connection

OZONE DEPLETING SUBSTANCES POLICY STATEMENT

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 83736 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com

Rev. 1.5, 07-May-08 153
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1