PD -90467
REPETITIVE AVALANCHE AND dv/dt RATED IRF460
HEXFET TRANSISTORS 500V, N-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF460 500V 0.27Ω 21
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability. TO-3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. n Repetitive Avalanche Ratings
They are well suited for applications such as switching n Dynamic dv/dt Rating
power supplies, motor controls, inverters, choppers, audio n Hermetically Sealed
amplifiers and high energy pulse circuits. n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 21
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 14 A
I DM Pulsed Drain Current ➀ 84
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 1200 mJ
IAR Avalanche Current ➀ 21 A
EAR Repetitive Avalanche Energy ➀ 30 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 3.5 V/ns
TJ Operating Junction -55 to 150
o
T STG Storage Temperature Range C
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
For footnotes refer to the last page
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IRF460
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
∆BV DSS/∆TJ Temperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.27 VGS = 10V, ID = 14A ➃
Ω
Resistance — — 0.31 VGS = 10V, ID =21A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
Ω
gfs Forward Transconductance 13 — — S( ) VDS > 15V, IDS = 14A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS=400V,VGS=0V
— — 250 µA VDS =400V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
nA
I GSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Qg Total Gate Charge 84 — 190 VGS = 10V, ID=21A
Qgs Gate-to-Source Charge 12 — 27 nC VDS = 250V
Qgd Gate-to-Drain (‘Miller’) Charge 60 — 135
td(on) Turn-On Delay Time — — 35 VDD =250V, ID =21A,
tr Rise Time — — 120 RG =2.35Ω
ns
td(off) Turn-Off Delay Time — — 130
tf Fall Time — — 98
LS + LD Total Inductance — 6.1 — nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance — 4300 VGS = 0V, VDS = 25V
Coss Output Capacitance — 1000 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 250 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — 21
A
ISM Pulse Source Current (Body Diode) ➀ — — 84
VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 21A, VGS = 0V ➃
t rr Reverse Recovery Time — — 580 nS Tj = 25°C, IF = 21A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 8.1 µC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 0.42
°C/W
R thJA Junction to Ambient — — 30 Typical socket mount
For footnotes refer to the last page
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IRF460
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF460
13 a& b
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF460
RD
V DS
VGS
D.U.T.
RG
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF460
1 5V
L D R IV E R
VD S
RG D .U .T +
V
- DD
IA S A
10V
20V
tp 0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.
50KΩ
12V .2µF
QG .3µF
+
10 V V
QGS QGD D.U.T. - DS
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF460
Foot Notes:
➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 21A, di/dt ≤ 160A/µs,
maximum junction temperature. VDD≤ 500V, TJ ≤ 150°C
➁ VDD = 50V, starting TJ = 25°C, Suggested RG =2.35 Ω
Peak IL = 21A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AE (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 1/01
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