Schwandt, Jörn - Resultados de la búsqueda

Buscar colecciones:

Ordenar por:	Mostrar resultados:	Formato de visualización:

CERN Document Server	Encontrados 3 registros	La búsqueda tardó 0.89 segundos.

Defects and acceptor removal in $^{60}$Co $\gamma$-irradiated $p$-type silicon / Himmerlich, Anja (CERN) ; Castelló-Mor, Núria (Cantabria Inst. of Phys.) ; Currás-Rivera, Esteban (CERN) ; Gurimskaya, Yana (CERN) ; Mateu, Isidre (CERN) ; Moll, Michael (CERN) ; Peters, Karol Pawel (CERN) ; Sorgenfrei, Niels (CERN ; Freiburg U., Inst. Phys. Chem.) ; Wiehe, Moritz (CERN) ; Nitescu, Andrei (Bucharest U.) et al.
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called Acceptor Removal Effect (ARE), depends on particle type, particle energy and radiation dose and is usually explained by the formation of boroninterstitial - oxygen-interstitial (BiOi) defects that induce a donor-type defect level in the upper part of the Si band gap. [...]
arXiv:2505.20790.- 2025-07-26 - 17 p. - Published in : Nucl.Instrum.Meth.A 1081 (2026) 170886 Fulltext: 2505.20790 - PDF; Published version - PDF;

Registro completo

Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors / Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.- 2022-12-22 - Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977 Fulltext: PDF;

Registro completo

TCAD Device Simulations of Irradiated Silicon Detectors / Palomo Pinto, Francisco Rogelio (Seville U.) ; Moll, Michael (CERN) ; Schwandt, Jörn (Hamburg U.) ; Villani, E Giulio (Rutherford) ; Gurimskaya, Yana (CERN) ; Millán, Rafael (Seville U.)
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. [...]
SISSA, 2020 - 12 p. - Published in : PoS Vertex2019 (2020) 051 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.051

Registro completo

Vea también: autores con nombres similares
20	Schwandt, J
28	Schwandt, J.
1094	Schwandt, Joern
6	Schwandt, Jorn

¿Le interesa recibir alertas sobre nuevos resultados de esta búsqueda?
Defina una alerta personal vía correo electrónico o subscríbase al canal RSS.

¿No ha encontrado lo que estaba buscando? Intente su búsqueda en:
Schwandt, Jörn en Amazon Schwandt, Jörn en CERN EDMS Schwandt, Jörn en CERN Intranet Schwandt, Jörn en CiteSeer Schwandt, Jörn en Google Books Schwandt, Jörn en Google Scholar Schwandt, Jörn en Google Web Schwandt, Jörn en IEC	Schwandt, Jörn en IHS Schwandt, Jörn en INSPIRE Schwandt, Jörn en ISO Schwandt, Jörn en KISS Books/Journals Schwandt, Jörn en KISS Preprints Schwandt, Jörn en NEBIS Schwandt, Jörn en SLAC Library Catalog Schwandt, Jörn en Scirus

CERN Document Server

Access articles, reports and multimedia content in HEP

Main menu

		Consejos para la búsqueda Búsqueda avanzada
Add to Search +

CERN Accelerating science