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Miaomiao Wang 0006
Person information
- affiliation: IBM Research, Albany, NY, USA
Other persons with the same name
- Miaomiao Wang — disambiguation page
- Miaomiao Wang 0001
— University of Western Ontario, London, ON, Canada
- Miaomiao Wang 0002
- Miaomiao Wang 0003
- Miaomiao Wang 0004
- Miaomiao Wang 0005
- Miaomiao Wang 0007 — Southwest University of Science and Technology, Mianyang, China
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2020 – today
- 2024
- [c16]Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang:
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. IRPS 2024: 1-9 - [c15]Huimei Zhou, Miaomiao Wang, Ernest Y. Wu:
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. IRPS 2024: 2 - [c14]Ruilong Xie, Wonhyuk Hong, Chen Zhang, Jongjin Lee, Kevin Brew, Richard Johnson, Nicholas A. Lanzillo, Hosadurga Shobha, Taesun Kim, Panjae Park, Shogo Mochizuki, Iqbal Saraf, Chanro Park, Lei Zhuang, Clifford Osborn, Wai Kin Li, Feng Liu, Muthumanickam Sankarapandian, Chung Ju Yang, Juntao Li, Lukas Tierney, Ruturaj Pujari, Yasir Sulehria, Yuncheng Song, Huimei Zhou, Miaomiao Wang, Michael Belyansky, Somnath Ghosh, Haojun Zhang, Koichi Motoyama, Debarghya Sarkar, Wukang Kim, Albert Chu, Tao Li, Fabio Carta, Oleg Gluschenkov, Joongsuk Oh, Matthew Malley, Pinlei Chu, Son Nguyen, Katherine Luedders, Joe Lee, Shahrukh Khan, Prabudhya Roy Chowdhury, Huai Huang, Abir Shadman, Stuart Sieg, Daniel Dechene, Daniel Edelstein, John Arnold, Tenko Yamashita, Kisik Choi, Kang-ill Seo, Dechao Guo, Huiming Bu:
Backside Power Distribution for Nanosheet Technologies Beyond 2nm. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c13]Huimei Zhou, Miaomiao Wang, Nicolas Loubet, Andrew Gaul, Yasir Sulehria:
Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices. IRPS 2023: 1-6 - 2022
- [c12]Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo:
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. IRPS 2022: 2 - [c11]Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang:
SiGe Gate-All-around Nanosheet Reliability. IRPS 2022: 60-1 - 2021
- [c10]Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. IRPS 2021: 1-8 - [c9]Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo:
TDDB Reliability in Gate-All-Around Nanosheet. IRPS 2021: 1-6 - 2020
- [c8]Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. IRPS 2020: 1-6 - [c7]Tian Shen, Koji Watanabe, Huimei Zhou, Michael Belyansky, Erin Stuckert, Jingyun Zhang, Andrew Greene, Veeraraghavan S. Basker, Miaomiao Wang:
A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. IRPS 2020: 1-5 - [c6]Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan:
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c5]Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra:
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. IRPS 2019: 1-8 - [c4]Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis:
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. IRPS 2019: 1-6 - 2018
- [c3]Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis:
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. IRPS 2018: 6 - 2017
- [c2]Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick:
Hot carrier reliability in ultra-scaled sige channel p-FinFETs. ASICON 2017: 666-669 - 2016
- [j1]Hongmei Liao, Shifei Ding, Miaomiao Wang, Gang Ma:
An overview on rough neural networks. Neural Comput. Appl. 27(7): 1805-1816 (2016) - 2015
- [c1]Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen:
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. IRPS 2015: 4
Coauthor Index
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