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Kiyomi Naruke
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2010 – 2019
- 2012
- [j3]Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Takeshi Ogawa, Toshiaki Edahiro, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Yuka Furuta, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Rieko Tanaka, Hiromitsu Komai, Mai Muramoto, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara:
A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology. IEEE J. Solid State Circuits 47(1): 75-84 (2012) - 2011
- [c1]Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Hiromitsu Komai, Yuka Furuta, Mai Muramoto, Rieko Tanaka, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara:
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. ISSCC 2011: 198-199
2000 – 2009
- 2002
- [j2]Toru Tanzawa
, Akira Umezawa, Tadayuki Taura, Hitoshi Shiga, Tokumasa Hara, Yoshinori Takano, Takeshi Miyaba, Naoya Tokiwa, Kentaro Watanabe, Hiroshi Watanabe, Kazunori Masuda, Kiyomi Naruke, Hideo Kato, Shigeru Atsumi:
A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller. IEEE J. Solid State Circuits 37(11): 1485-1492 (2002)
1990 – 1999
- 1994
- [j1]Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Kiyomi Naruke, Seiji Yamada, Yoichi Ohshima, Masamitsu Oshikiri, Yohei Hiura, Tomoko Yamane, Kuniyoshi Yoshikawa:
A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation. IEEE J. Solid State Circuits 29(4): 461-469 (1994)
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