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IRPS 2020: Dallas, TX, USA
- 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. IEEE 2020, ISBN 978-1-7281-3199-3
- Riad Kabouche, Kathia Harrouche, Etienne Okada
, Farid Medjdoub:
Short-term reliability of high performance Q-band AlN/GaN HEMTs. 1-6 - Minsu Kim, Jeehwan Song, Chris H. Kim:
Reliability Characterization of Logic-Compatible NAND Flash Memory based Synapses with 3-bit per Cell Weights and 1μA Current Steps. 1-4 - Zhiqing Li, Baofu Zhu, Anindya Nath, Meng Miao
Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation. 1-4 - Jun-Kyo Jeong, Jae-Young Sung, Hee-Hun Yang, Hi-Deok Lee, Ga-Won Lee:
Reliability Analysis by Charge Migration of 3D SONOS Flash Memory. 1-5 - Robin Wuytens, Sybren Santermans
Two-Regime Drift in Electrolytically Gated FETs and BioFETs. 1-5 - Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. 1-5 - Rui Zhang, Zhaocheng Liu, Kexin Yang, Taizhi Liu, Wenshan Cai, Linda Milor
Inverse Design of FinFET SRAM Cells. 1-6 - Oren Zonensain, Roman Rechter, Robert Kwasnick, Keun-Woo Park, Anisur Rahman, Almog Reshef, Tal Raz, Maxim Levit:
Advanced methods for CPU product reliability modeling and enhancement. 1-5 - Sayak Dutta Gupta, Vipin Joshi
On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs. 1-4 - Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. 1-8 - Bahar Ajdari, Samwel Sekwao, Ricardo Ascázubi, Adam Neale, Norbert Seifert:
On the Correlation of Laser-induced and High-Energy Proton Beam-induced Single Event Latchup. 1-5 - Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth
Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs. 1-5 - Krishnaswamy Ramkumar, Venkatraman Prabhakar, Vineet Agrawal, Long Hinh, Swatilekha Saha, Santanu Kumar Samanta, Ravindra M. Kapre:
Reliability Aspects of SONOS Based Analog Memory for Neuromorphic Computing. 1-5 - Jia Hao Lim, Nagarajan Raghavan, Jae Hyun Kwon, Tae Young Lee, Robin Chao, Nyuk Leong Chung, Kazutaka Yamane, Naganivetha Thiyagarajah, Vinayak Bharat Naik, Kin Leong Pey
Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM. 1-5 - Tommaso Zanotti, Francesco Maria Puglisi
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise. 1-5 - Chen-Yi Su, Mark Armstrong, Sunny Chugh, Mohammed El-tanani, Hannes Greve, Hai Li
Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology. 1-5 - Yi Ram Kim, Allison T. Osmanson, Hossein Madanipour, Choong-Un Kim, Patrick F. Thompson, Qiao Chen:
Effects of UBM Thickness and Current Flow Configuration on Electromigration Failure Mechanisms in Solder Interconnects. 1-5 - Yohei Hiura, Shinichi Miyake, Shigetaka Mori, Koichi Matsumoto, Hidetoshi Ohnuma:
Study of Lower Voltage Protection against Plasma Process Induced Damage by Quantitative Prediction Technique. 1-5 - Alex Ayling
Sub-nanosecond Reverse Recovery Measurement for ESD Devices. 1-8 - Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula:
A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. 1-5 - Yang Wang, Chen Wang, Tao Chen, Hao Liu, Chinte Kuo, Ke Zhou, Binfeng Yin, Lin Chen, Qing-Qing Sun:
Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. 1-5 - Trang Le Dinh Dang
Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. 1-5 - Siddarth Sundaresan, Vamsi Mulpuri, Jaehoon Park, Ranbir Singh:
Reliability and Robustness Performance of 1200 V SiC DMOSFETs. 1-4 - Jakob Michl
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. 1-6 - Sandeep R. Bahl, Francisco Baltazar, Yong Xie:
A Generalized Approach to Determine the Switching Lifetime of a GaN FET. 1-6 - Yen-Pu Chen, Bikram Kishore Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam:
A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors. 1-6 - Luis Soriano, Hector Valencia, Ke-Xun Sun, Ronald Nelson:
Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations. 1-6 - Peng Xiao, Haris Hadziosmanovic, Rong Jiang, Misagh Rostami-asrabad, Stephen Ramey, Ilan Tsamaret:
Reliability Stressing Control Using Jacobian Feedback Kelvin Measurement on Intel Technologies. 1-4 - Koichiro Okamoto, Ryusuke Nebashi, Naoki Banno, Xu Bai, Hideaki Numata, Noriyuki Iguchi, Makoto Miyamura, Hiromitsu Hada, Kazunori Funahashi, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada
ON-state retention of Atom Switch eNVM for IoT/AI Inference Solution. 1-4 - Sourov Roy, Abu Hanif, Faisal Khan:
Degradation Detection of Power Switches in a Live Three Phase Inverter using SSTDR Signal Embedded PWM Sequence. 1-7 - Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. 1-5 - Naohito Suzumura, Kazuyuki Omori, Hideaki Tsuchiya, Hideki Aono, Tomohiro Yamashita:
Impact of Anode-side Defect Generation on Inter-Level TDDB Degradation in Cu/Low-k Damascene Structures. 1-6 - Mireia Bargallo González
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. 1-4 - Thomas Aichinger, Matthias Schmidt:
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. 1-6 - Daniel B. Habersat, Aivars J. Lelis, Ronald Green:
Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. 1-4 - Khai Nguyen, Ernie Opiniano, Randolph Mah:
Backside Die-Edge and Underfill Fillet Cracks Induced by Additional Tensile Stress from Increasing Die-to-Package Ratio in Bare-Die FCBGA. 1-4 - Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo
Analysis of charge-to-hot-carrier degradation in Ge pFinFETs. 1-4 - Kuo-Hsuan Meng:
A Method to Analyze Aging Effect on ESD Protection Design. 1-6 - Hang-Ting Lue
Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper). 1-6 - Bernhard Ruch, Gregor Pobegen, Christian Schleich
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. 1-6 - Tian Shen, Koji Watanabe, Huimei Zhou, Michael Belyansky, Erin Stuckert, Jingyun Zhang, Andrew Greene, Veeraraghavan S. Basker, Miaomiao Wang:
A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. 1-5 - Michael Waltl
Defect Spectroscopy in SiC Devices. 1-9 - Nagothu Karmel Kranthi, Chirag Garg
How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts. 1-6 - Tobias Kemmer
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. 1-6 - E. R. Hsieh, H. W. Cheng, Z. H. Huang, C. H. Chuang, S. P. Yang, Steve S. Chung:
A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory. 1-4 - Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. 1-6 - Jose Angel Ortiz Gonzalez
Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs. 1-10 - Cheyun Lin, Uygar E. Avci, M. A. Blount, Rohit Grover, Jeffery Hicks, R. Kasim, A. Kundu, C. M. Pelto, C. Ryder, Anthony Schmitz, K. Sethi, D. Seghete, D. J. Towner, A. J. Welsh, J. Weber, C. Auth:
Reliability Characteristics of a High Density Metal- Insulator-Metal Capacitor on Intel's 10+ Process. 1-4 - Hyeong-Sub Song, Sunil Babu Eadi
Investigation of Random Telegraph Noise Characteristics with Intentional Hot Carrier Aging. 1-4 - Rosana Rodríguez, Albert Crespo-Yepes
Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation. 1-7 - Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. 1-9 - Jeevesh Kumar, Ansh, Asha Yadav, Anant Singh, Andrew Naclerio, Dmitri N. Zakharov, Piran Kidambi, Mayank Shrivastava:
Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress. 1-4 - Lyuan Xu, Jingchen Cao, John Brockman, Carlo Cazzaniga, Christopher Frost, Shi-Jie Wen, Rita Fung, Bharat L. Bhuva:
Thermal Neutron Induced Soft Errors in 7-nm Bulk FinFET Node. 1-5 - Ansh, Gaurav Sheoran, Jeevesh Kumar, Mayank Shrivastava:
First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. 1-4 - Marina Yamaguchi, Shosuke Fujii, Kensuke Ota, Masumi Saitoh:
Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning. 1-6 - David C. Zhou, William Li, Jingyu Shen, Leilei Chen, Thomas Zhao, Kent Lin, Martin Zhang, Larry Chen, H. C. Chiu, Jeff Zhang, Roy K.-Y. Wong
Reliability of 200mm E-mode GaN-on-Si Power HEMTs. 1-3 - Elias Reese:
The Role of RF Operational Life Testing in Evaluating III-V Devices Addressing RF Through Millimeter-wave Applications. 1-4 - Ketul B. Sutaria, Jihan Standfest, Inanc Meric, Amirhossein H. Davoody, Swaroop Kumar Namalapuri, Trinadh Mutyala, Supriya P., Balkaran Gill, Stephen Ramey, Jeffery Hicks:
Novel Re-configurable Circuits For Aging Characterization: Connecting Devices to Circuits. 1-5 - Martina Gerlach, Peter Seidel, Josef Lutz
Specific aspects regarding evaluation of power cycling tests with SiC devices. 1-6 - Andreas Martin, Angelika Kamp:
A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs. 1-9 - Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié:
AC stress reliability study of a new high voltage transistor for logic memory circuits. 1-5 - Xin Ju
Gate-Oxide Trapping Enabled Synaptic Logic Transistor. 1-6 - Hai Jiang
Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology. 1-5 - Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. 1-6 - Simon Schlipf, André Clausner
Nanoindentation to investigate IC stability using ring oscillator circuits as a CPI sensor. 1-6 - Mauro Ciappa, Marco Pocaterra
Measurement of the Pre-Breakdown Characteristics in Silicon Carbide Power Devices by the Use of Radioactive Gamma Sources. 1-7 - Alexander Grill, Erik Bury, Jakob Michl
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. 1-6 - Jyotika Athavale, Andrea Baldovin, Michael Paulitsch:
Trends and Functional Safety Certification Strategies for Advanced Railway Automation Systems. 1-7 - Jing-Chyi Liao, Paul Ko, M. H. Hsieh, Zheng Zeng:
Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process. 1-3 - John M. McGlone, Guy Brizar, Daniel Vanderstraeten, Dorai Iyer, Sallie Hose, Jeff P. Gambino:
Effect of Residual TiN on Reliability of Au Wire Bonds during High Temperature Storage. 1-5 - Dongyoung Kim, Adam J. Morgan, Nick Yun, Woongje Sung, Anant Agarwal, Robert Kaplar
Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. 1-6 - Weishen Chu, Laura Spinella, Dwayne R. Shirley, Paul S. Ho:
Effects of Wiring Density and Pillar Structure on Chip Package Interaction for Advanced Cu Low-k Chips. 1-4 - Kyong Jin Hwang, Sagar Premnath Karalkar, Vishal Ganesan, Sevashanmugam Marimuthu, Alban Zaka, Tom Herrmann, Bhoopendra Singh, Robert Gauthier:
Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology. 1-4 - Subrat Mishra, Pieter Weckx, Ji-Yung Lin
Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). 1-5 - Venkata Chaitanya Krishna Chekuri, Arvind Singh, Nael Mizanur Rahman, Edward Lee, Saibal Mukhopadhyay:
Aging Challenges in On-chip Voltage Regulator Design. 1-8 - Alicja Lesniewska, Philippe J. Roussel, Davide Tierno
Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill. 1-6 - Nian-Jia Wang, Kuan-Yi Lee, Hsin-Yi Lin, Wei-Hao Hsiao, Ming-Yi Lee, Li-Kuang Kuo, Ding-Jhang Lin, Yen-Hai Chao, Chih-Yuan Lu:
Statistical Analysis of Bit-Errors Distribution for Reliability of 3-D NAND Flash Memories. 1-5 - Govind Bajpai, Aniket Gupta, Om Prakash, Girish Pahwa
Impact of Radiation on Negative Capacitance FinFET. 1-5 - Don A. Gajewski:
Challenges and Peculiarities in Developing New Standards for SiC. 1-5 - Tae Young Lee
Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production. 1-4 - Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. 1-8 - Assaad El Helou, Marko J. Tadjer, Karl D. Hobart, Peter E. Raad
Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond. 1-4 - Enrico Zanoni
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. 1-10 - Chetan Prasad, Sunny Chugh, Hannes Greve, I-chen Ho, Enamul Kabir, Cheyun Lin, Mahjabin Maksud, Steven R. Novak, Benjamin Orr, Keun Woo Park, Anthony Schmitz, Zhizheng Zhang, Peng Bai, Doug B. Ingerly, Emre Armagan, Hsinwei Wu, Patrick N. Stover, Lance Hibbeler, Michael O'Day, Daniel Pantuso:
Silicon Reliability Characterization of Intel's Foveros 3D Integration Technology for Logic-on-Logic Die Stacking. 1-5 - Kin P. Cheung:
Anomalous accelerated negative-bias- instability (NBI) at low drain bias. 1-3 - Somayyeh Rahimi, Christian Schmidt, Joy Y. Liao, Howard Lee Marks, Kyung Mo Shin:
Impact of X-Ray Radiation on the Reliability of Logic Integrated Circuits. 1-4 - Juan Bautista Roldán, David Maldonado
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages. 1-5 - W. Rhett Davis
How to write a compact reliability model with the Open Model Interface (OMI). 1-2 - Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. 1-6 - Jeffrey Zhang, Antai Xu, Daniel Gitlin, Desmond Yeo:
Dynamic vs Static Burn-in for 16nm Production. 1-3 - Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer:
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. 1-4 - Inanc Meric, Stephen Ramey, Steven R. Novak, S. Gupta, S. P. Mudanai, Jeffrey Hicks:
Modeling Framework for Transistor Aging Playback in Advanced Technology Nodes. 1-6 - Nilotpal Choudhury, Narendra Parihar, Souvik Mahapatra:
Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range. 1-5 - Chieh Roger Lo, Teng-Hao Yeh, Wei-Chen Chen, Hang-Ting Lue
Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. 1-6 - P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min:
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications. 1-4 - Rajat Sinha
Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions. 1-6 - Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li:
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. 1-4 - Rahul R. Potera, Tony Witt, Yongju Zheng:
Analysis of Transient HTRB Leakage in a SiC Field Ring Termination. 1-5 - Mary A. Miller, Edward I. Cole, Garth M. Kraus, Perry J. Robertson:
At-Speed Defect Localization by Combining Laser Scanning Microscopy and Power Spectrum Analysis. 1-5 - Olalla Varela Pedreira
Metal reliability mechanisms in Ruthenium interconnects. 1-7 - Rodolfo A. Rodriguez-Davila, Richard A. Chapman, Massimo Catalano
Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3. 1-5 - Aniket Gupta, Kai Ni, Om Prakash, Xiaobo Sharon Hu
Temperature Dependence and Temperature-Aware Sensing in Ferroelectric FET. 1-5 - Tom Bonifield, Honglin Guo, Jeff West, Hisashi Shichijo, Talha Tahir:
High Frequency TDDB of Reinforced Isolation Dielectric Systems. 1-4 - Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer:
A Compact Physics Analytical Model for Hot-Carrier Degradation. 1-7 - Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan:
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. 1-6 - Lyuan Xu, Jingchen Cao, Shi-Jie Wen, Rita Fung, Jamie Markevitch, Dennis R. Ball, Bharat L. Bhuva:
High-Current State triggered by Operating-Frequency Change. 1-4 - Kai Ni, Aniket Gupta, Om Prakash, Simon Thomann
Impact of Extrinsic Variation Sources on the Device-to-Device Variation in Ferroelectric FET. 1-5 - Tae-Young Jeong, Miji Lee, Yunkyung Jo, Jinwoo Kim, Min Kim, Myungsoo Yeo, Jinseok Kim, Hyunjun Choi, Joosung Kim, Yoojin Jo, Yongsung Ji, Taiki Uemura, Hai Jiang, Dongkyun Kwon, HwaSung Rhee, Sangwoo Pae, Brandon Lee:
Reliability on EUV Interconnect Technology for 7nm and beyond. 1-4 - Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent:
Comparison of variability of HCI induced drift for SiON and HKMG devices. 1-5 - Chen Wu, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Kris Croes:
Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects. 1-6 - Joseph P. Kozak, Ruizhe Zhang, Jingcun Liu, Khai D. T. Ngo, Yuhao Zhang:
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching. 1-6 - Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM. 1-4 - Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens:
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms. 1-5 - Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury
Robust avalanche in GaN leading to record performance in avalanche photodiode. 1-4 - James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis:
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. 1-4 - Shifan Gao
Superior Data Retention of Programmable Linear RAM (PLRAM) for Compute-in-Memory Application. 1-5 - Clement Huang, Alex Juan, K. C. Su:
Stress Induced Voiding Behavior of Electroplated Copper Thin Films in Highly Scaled Cu/low-k interconnects. 1-3 - Andrea Natale Tallarico
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. 1-5 - Kuan-Ting Chen, C. Lo, Y.-Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y.-J. Yang, F.-C. Hsieh, S.-H. Chang, H. Liang, S.-H. Chiang, J.-H. Liu, Y.-D. Lin, P.-C. Yeh, C.-Y. Wang, H.-Y. Yang, P.-J. Tzeng, M.-H. Liao, Shu-Tong Chang, Y.-Y. Tseng, Min-Hung Lee
Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. 1-4 - Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee:
Reliability of Industrial grade Embedded-STT-MRAM. 1-3 - Kuilong Yu, Xiaojuan Zhu, Rui Fang, Tingting Ma, Kun Han, Zhongyi Xia:
Hybrid HCI Degradation in Sub-micron NMOSFET due to Mixed Back-end Process Damages. 1-4 - Wen Yang, Jiann-Shiun Yuan, Balakrishnan Krishnan, An-Jye Tzou, Wen-Kuan Yeh:
Substrate Bias Effect on Dynamic Characteristics of a Monolithically Integrated GaN Half-Bridge. 1-5 - Wang Liao
Characterizing Energetic Dependence of Low-Energy Neutron-induced MCUs in 65 nm bulk SRAMs. 1-5 - Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. 1-7 - Heung-Kook Ko, Sena Park, Jihyun Ryu, Sung Ryul Kim, Giwon Lee, Dongjoon Lee, Sangwoo Pae, Euncheol Lee, Yongsun Ji, Hai Jiang, Taeyoung Jeong, Taiki Uemura, Dongkyun Kwon, Hyungrok Do
Early Diagnosis and Prediction of Wafer Quality Using Machine Learning on sub-10nm Logic Technology. 1-5 - Harumi Seki, Yasushi Nakasaki, Yuichiro Mitani:
Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation. 1-7 - Shanmuganathan Palanisamy
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. 1-6 - Peter Friedrichs:
Ruggedness of SiC devices under extreme conditions. 1-5 - Yiming Qu, Jiwu Lu, Junkang Li, Zhuo Chen, Jie Zhang, Chunlong Li, Shiuh-Wuu Lee, Yi Zhao:
In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation. 1-6 - Linglin Jing, Rui Gao, Zhigang Ji, Runsheng Wang:
"Shift and Match" (S...M) method for channel mobility correction in degraded MOSFETs. 1-8 - Chang Cai
Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs. 1-5 - Victor M. van Santen
BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity. 1-7 - Rohit Grover, Tony Acosta, C. AnDyke, Emre Armagan, C. Auth, Sunny Chugh, K. Downes, M. Hattendorf, N. Jack, S. Joshi, R. Kasim, Gerald S. Leatherman, S.-H. Lee, C.-Y. Lin, A. Madhavan, H. Mao, A. Lowrie, G. Martin, G. McPherson, Pinakpani Nayak, Adam Neale, D. Nminibapiel, Benjamin Orr, James Palmer, C. M. Pelto, S. S. Poon, I. Post, Tanmoy Pramanik, Anisur Rahman, Stephen Ramey, Norbert Seifert, K. Sethi, Anthony Schmitz, H. Wu, A. Yeoh:
A Reliability Overview of Intel's 10+ Logic Technology. 1-6 - Dmitry Goloubev, Shi-Jie Wen, Donald Allen, Ranjani Ram, Firdous Bano, Nithin Guruswamy, James Turman:
Use of Silicon-based Sensors for System Reliability Prediction. 1-6 - Amartya Ghosh, Jifa Hao, Michael Cook, Chris Kendrick, Samia A. Suliman, Gavin D. R. Hall, Tom Kopley, Osama O. Awadelkarim:
Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs. 1-4 - Peter C. Paliwoda, Mohamed A. Rabie, Oscar D. Restrepo
Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications. 1-5 - Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. 1-5 - Nikolaos Papandreou, Haralampos Pozidis, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka
Open Block Characterization and Read Voltage Calibration of 3D QLC NAND Flash. 1-6 - David Maldonado
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. 1-5 - Artsiom Balakir, Alan Yang, Elyse Rosenbaum:
An Interpretable Predictive Model for Early Detection of Hardware Failure. 1-5 - Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Ming Xiao, Yuhao Zhang:
Surge Energy Robustness of GaN Gate Injection Transistors. 1-7 - Evelyn Landman, Noam Brousard, Tamar Naishlos:
A novel approach to in-field, in-mission reliability monitoring based on Deep Data. 1-8 - William A. Hubbard, Zachary Lingley, Jesse Theiss, Miles Brodie, Brendan Foran:
STEM EBIC for High-Resolution Electronic Characterization. 1-5 - M. H. Hsieh, W. S. Chiang, Harry H. Chen, M. Z. Lin, M. J. Lin:
Comprehensive Quality and Reliability Management for Automotive Product. 1-5 - Chao-Yang Ke
Over-Voltage Protection on the CC Pin of USB Type-C Interface against Electrical Overstress Events. 1-5 - Md. Mehedi Hasan, Md Raquibuzzaman
Radiation Tolerance of 3-D NAND Flash Based Neuromorphic Computing System. 1-4 - Nagothu Karmel Kranthi, Boeila Sampath Kumar, Akram A. Salman, Gianluca Boselli
Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. 1-5 - Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. 1-4 - Maurits J. de Jong, Cora Salm
Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices. 1-6 - Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. 1-6 - Andrew M. Keller, Jared Anderson, Michael J. Wirthlin, Shi-Jie Wen, Rita Fung, Conner Chambers:
Using Partial Duplication With Compare to Detect Radiation-Induced Failure in a Commercial FPGA-Based Networking System. 1-6 - Premachandran CS, Salvatore Cimino, Manjunatha Prabhu:
Efficient Bidirectional protection structure for Plasma induced damage (PID) and Electrostatic discharge (ESD) for 3D IC Integration. 1-5 - Rui Gao, Mehzabeen Mehedi, Haibao Chen, Xinsheng Wang, Jianfu Zhang, Xiaoling Lin, Zhiyuan He, Yiqiang Chen, Dengyun Lei, Yun Huang, Yunfei En, Zhigang Ji, Runsheng Wang:
A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. 1-5 - Clyde Dunn, John MacPeak, Sean Bo, Brian Kirkpatrick, Brian Horning, Tad Grider, Corey O'Brien, Steve Heinrich-Barna, Armando Vigil, Jon Nafziger, Lyndon Preiss, Kelly DeShields, Viktor Markov, JinHo Kim, Nhan Do, Alexander Kotov:
Program Disturb Mechanism in Embedded SuperFlash® Technology. 1-5 - Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. 1-7 - Kalparupa Mukherjee, Carlo De Santi
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. 1-5 - Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. 1-6 - Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Hyungcheol Shin, Haesoo Kim, Gil-Bok Choi, Moon-Sik Seo, Keum Hwan Noh:
Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. 1-6 - Jae-Gyung Ahn, Ping-Chin Yeh, Jonathan Chang:
Estimation of Product Reliability using TDDB Simulation and Statistical EM Method. 1-6 - Sarath Mohanachandran Nair, Rajendra Bishnoi, Mehdi B. Tahoori, Houman Zahedmanesh, Kristof Croes, Kevin Garello
Physics based modeling of bimodal electromigration failure distributions and variation analysis for VLSI interconnects. 1-5 - Rakesh Ranjan, Charles B. LaRow, Ki-Don Lee, Minhyo Kang, Pavitra R. Perepa, Md. Shahriar Rahman, Bong Ki Lee, David Moreau, Carolyn Cariss-Daniels, Timothy Basford, Colby Callahan, Maihan Nguyen, Gil Heyun Choi, Hyunchul Sagong, HwaSung Rhee:
Trap Density Modulation for IO FinFET NBTI Improvement. 1-5 - M. Monishmurali, Milova Paul, Mayank Shrivastava:
Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. 1-6 - Paul Colestock, P. Srinivasan, Fernando Guarin:
Silicon Based RF Reliability Challenges for 5G Communications. 1-4 - Tian Shi Zhao, Chun Zhao, Ivona Z. Mitrovic, Eng Gee Lim, Li Yang, Chenghu Qiu, Ce Zhou Zhao:
Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. 1-4 - Chung-Shuo Lee, Pavan Kumar Vaitheeswaran, Ganesh Subbarayan, Young-Joon Park, Jayhoon Chung, Srikanth Krishnan:
Reliability of Metal-Dielectric Structures Under Intermittent Current Pulsing. 1-6 - Shin-ichiro Abe, Tatsuhiko Sato
Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets. 1-7 - Christopher H. Bennett, T. Patrick Xiao, Ryan Dellana, Ben Feinberg, Sapan Agarwal
Device-aware inference operations in SONOS nonvolatile memory arrays. 1-6 - Longda Zhou
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. 1-6 - Wen Yang, Nicholas Stoll, Jiann-Shiun Yuan:
ESD Robustness of GaN-on-Si Power Devices under Substrate Biases by means of TLP/VFTLP Tests. 1-5 - Wriddhi Chakraborty, Uma Sharma, Suman Datta, Souvik Mahapatra:
Hot Carrier Degradation in Cryo-CMOS. 1-5 - Yao-Feng Chang, James A. O'Donnell, Tony Acosta, Roza Kotlyar, Albert B. Chen, Pedro A. Quintero, Nathan Strutt, Oleg Golonzka, Chris Connor, Jeff Hicks:
eNVM RRAM reliability performance and modeling in 22FFL FinFET technology. 1-4 - Wonbo Shim, Yandong Luo, Jae-sun Seo, Shimeng Yu
Impact of Read Disturb on Multilevel RRAM based Inference Engine: Experiments and Model Prediction. 1-5 - Jian Liu, Divya Acharya, Nathaniel Peachey:
Triggering Optimization on NAND ESD Clamp and Its ESD Protection IO Scheme for CMOS Designs. 1-6 - Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. 1-6 - Charles Mackin
Neuromorphic Computing with Phase Change, Device Reliability, and Variability Challenges. 1-10 - Madankumar Sampath, Dallas T. Morisette
Constant-Gate-Charge Scaling for Increased Short-Circuit Withstand Time in SiC Power Devices. 1-4 - Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Youngin Park, Kiil Hong, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET. 1-5 - Thong Tran, Sudheer Reddy Gundala, Komal Soni, Aaron Baker, Adam Fogle, Sandhya Chandrashekhar:
No Trouble Found (NTF) Customer Return Analysis. 1-6 - Jingchen Cao, Lyuan Xu, Shi-Jie Wen, Rita Fung, Balaji Narasimham, Lloyd W. Massengill, Bharat L. Bhuva:
Temperature Dependence of Single-Event Transient Pulse Widths for 7-nm Bulk FinFET Technology. 1-5 - Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. 1-5 - Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher
Similarities and Differences of BTI in SiC and Si Power MOSFETs. 1-7 - Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein
Embracing the Unreliability of Memory Devices for Neuromorphic Computing. 1-5
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